JPH11171671A - Production of plate silicon carbide-silicon composite ceramic - Google Patents

Production of plate silicon carbide-silicon composite ceramic

Info

Publication number
JPH11171671A
JPH11171671A JP36969597A JP36969597A JPH11171671A JP H11171671 A JPH11171671 A JP H11171671A JP 36969597 A JP36969597 A JP 36969597A JP 36969597 A JP36969597 A JP 36969597A JP H11171671 A JPH11171671 A JP H11171671A
Authority
JP
Japan
Prior art keywords
sic
plate
composite ceramic
surface layer
ceramic plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP36969597A
Other languages
Japanese (ja)
Inventor
Akihiko Sato
明彦 佐藤
Kimitoshi Satou
仁俊 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Konetsu Kogyo Co Ltd
Original Assignee
Tokai Konetsu Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Konetsu Kogyo Co Ltd filed Critical Tokai Konetsu Kogyo Co Ltd
Priority to JP36969597A priority Critical patent/JPH11171671A/en
Publication of JPH11171671A publication Critical patent/JPH11171671A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5093Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
    • C04B41/5096Silicon

Abstract

PROBLEM TO BE SOLVED: To provide a process for producing an SiC-Si composite ceramic plate having extremely high flatness and usable as a tray or cover of a furnace for the baking of electronic parts, ceramics and powder. SOLUTION: This SiC-Si composite ceramic plate is compound mainly of 75-85 wt.% of SiC and 25-15 wt.% of Si. The ceramic plate is produced by adding an additive and a solvent to SiC particles having particle size distribution extending from 200 μm (the maximum diameter) to submicron order, forming the obtained slurry to a plate by a solid casting method, forming a layer composed exclusively of fine powders having particle diameter of <=25 μm as the surface layer having a thickness of 50-200 μm, and heating the formed product at >=1500 deg.C in a non-oxidizing atmosphere to effect the impregnation of Si. The surface layer is relatively easily formable using a gypsum material having a porosity of >=40% as the forming mold.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子部品やセラミ
ックスなどを焼成する加熱炉に棚板やふたなどとして用
いられる板状SiC−Si系複合セラミックスの製造方
法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a plate-shaped SiC-Si composite ceramic used as a shelf or a lid in a heating furnace for firing electronic parts or ceramics.

【0002】[0002]

【従来の技術】電子部品や各種セラミックスを焼成する
際に、棚板やサヤのふたなど板状の部材が用いられるこ
とが多い。これらの板状については、従来からSiC、
Al,ムライトなどのセラミック質のものが振動
成形などの加圧プレス成形により製造されており広く用
いられている。近年、高温強度や耐酸化性などの観点か
らSiC−Si系複合セラミックスが脚光を浴びてき
た。板状のSiC−Si系複合セラミックスを製造する
場合、一般的には振動成形などの加圧プレス成形法で、
SiC粉体を成形し、気孔中に金属Siを含浸する方法
が一般的である。この成形方法は、かなりの粗粒を入れ
る必要があり、表面の平滑度が悪いという欠点があっ
た。処理物を積載して焼成する場合、搬送などで吸引す
る場合など、表面の平滑度が悪いため使用困難であっ
た。また一般的にセラミックスの成形方法として知られ
ている固型鋳込方法を採用しても、SiCの泥しょうを
用いた場合、離型性や、成形体中に巣が発生することが
多く、実用上採用は難しい状況であった。
2. Description of the Related Art When firing electronic components and various ceramics, plate-like members such as shelf boards and lids of sheaths are often used. For these plate shapes, conventionally, SiC,
Ceramic materials such as Al 2 O 3 and mullite are manufactured by pressure press molding such as vibration molding and are widely used. In recent years, SiC-Si-based composite ceramics have been spotlighted from the viewpoint of high-temperature strength and oxidation resistance. When manufacturing a plate-like SiC-Si-based composite ceramic, generally, a pressure press molding method such as vibration molding is used.
In general, a method of molding SiC powder and impregnating pores with metallic Si is used. This molding method has a drawback in that it is necessary to add considerable coarse particles, and the surface has poor smoothness. It is difficult to use due to poor surface smoothness, such as when loading and firing the processed material or when sucking during transportation. In addition, even if a solid casting method, which is generally known as a molding method of ceramics, is employed, when using SiC slurry, mold release properties and cavities often occur in a molded body, It was a difficult situation for practical use.

【0003】[0003]

【発明が解決しようとする課題】本発明者らは、このよ
うな要求、すなわち平滑度の良い板状SiC−Si系複
合セラミックスを提供するため、鋭意研究を重ねた結
果、表面部分に微粒からなる層を形成せしめることによ
り、その製造方法を確立するに至った。
SUMMARY OF THE INVENTION The present inventors have conducted intensive studies in order to provide such a requirement, that is, to provide a plate-shaped SiC-Si-based composite ceramic having good smoothness. By forming such a layer, a method for producing the same has been established.

【0004】[0004]

【課題を解決するための手段】すなわち、本発明に関す
る板状SiC−Si系複合セラミックスの製造方法は、
SiC75〜85重量%とSi25〜15重量%を主成
分とする板状SiC−Si系複合セラミックスにおい
て、最大粒径200μmからサブミクロンまで粒配され
たSiC粒に添加剤と溶媒を加え、泥しょうとしたのち
固型鋳込法により、板状に成形し、該成形体の表面層5
0〜200μmに粒径25μm以下の微粉のみからなる
層を形成せしめ、該成形体を非酸化雰囲気で1500℃
以上の高温下でSiを含浸させたことを特徴とする。こ
こで、上記の固型鋳込法において、成形型として気孔率
40%以上の石膏型を採用することにより、粒径25μ
m以下の表面層を容易に形成させることができる。表面
層の形成は、石膏型の気孔率や固型鋳込の際の圧力を調
整することにより制御可能である。
That is, a method for producing a plate-like SiC-Si-based composite ceramic according to the present invention comprises:
In a plate-shaped SiC-Si-based composite ceramic mainly composed of 75 to 85% by weight of SiC and 25 to 15% by weight of Si, an additive and a solvent are added to a SiC particle having a maximum particle size of 200 μm to submicron, and a slurry is added. And then molded into a plate by the solid casting method.
A layer consisting of only fine powder having a particle size of 25 μm or less is formed at 0 to 200 μm, and the formed body is heated at 1500 ° C. in a non-oxidizing atmosphere.
It is characterized by being impregnated with Si at the above high temperature. Here, in the above-mentioned solid casting method, a gypsum mold having a porosity of 40% or more is employed as a mold, so that a particle diameter of 25 μm is obtained.
m or less can be easily formed. The formation of the surface layer can be controlled by adjusting the porosity of the gypsum mold and the pressure at the time of solid casting.

【0005】[0005]

【発明の実施の形態】本発明に係わるSiC−Si系複
合セラミックスにおいて、SiCが75重量%未満、S
iが25重量%を越える場合には含浸したSiが多いた
めに、耐クリープ特性や耐摩耗性が低下し、またSiC
が85重量%を越え、Siが15重量%を下回ると残存
する気孔が多くなって、強度特性や耐酸化性の低下を招
くことになる。また主成分としてのSiC,Siが前記
の範囲内であれば、第三成分が含まれていても、本発明
の製造方法に何ら差し支えないものである。SiC粒に
ついて最大粒径200μmを越えるものを採用すると泥
しょうを作成したときに沈降が発生し、分散が悪くな
る。又、表面層のSiC粒径が25μmを越える場合、
平滑度が悪くなる。該表面層の厚みについて、50μm
に満たない場合は、平滑度が良くならず効果がなく、2
00μmを越える厚みになると、中心部に粗粒が著しく
多くなり、強度面で低下が見られる。石膏型の気孔率が
40%未満の場合でも、上記表面層の作成は可能である
が、離型性が悪くなり、作業性が劣るため、40%以上
の石膏型を採用するのが望ましい。
BEST MODE FOR CARRYING OUT THE INVENTION In the SiC-Si based composite ceramics according to the present invention, the content of SiC is less than 75% by weight,
If i exceeds 25% by weight, the amount of Si impregnated is large, so that the creep resistance and wear resistance are reduced, and the SiC
Exceeds 85% by weight, and if the content of Si is less than 15% by weight, the number of remaining pores increases, leading to a decrease in strength characteristics and oxidation resistance. Further, if SiC and Si as main components are within the above range, even if the third component is contained, it does not interfere with the production method of the present invention. If SiC particles having a maximum particle size of more than 200 μm are employed, sedimentation occurs when the slurry is formed, and the dispersion becomes poor. When the SiC particle size of the surface layer exceeds 25 μm,
Poor smoothness. Regarding the thickness of the surface layer, 50 μm
When the value is less than 2, the smoothness is not improved and there is no effect.
When the thickness exceeds 00 μm, coarse particles are remarkably increased at the center, and a decrease in strength is observed. Even if the porosity of the gypsum mold is less than 40%, the surface layer can be formed, but the mold release property is deteriorated and workability is inferior. Therefore, it is desirable to use a gypsum mold of 40% or more.

【0006】[0006]

【実施例】以下本発明を実施例により説明する。平均粒
径3μmで最大粒径180μmのSiC粒に有機バイン
ダーにメチルセルロースを用いて、水中に分散混合して
均一な泥しょうを調整した。この泥しょうを気孔率44
%の石膏型を用いて、1.0Kg/cmの圧力をかけ
ながら固型鋳込法により300mm×300mm×7m
mの板を成形した。該成形体の表面に100μmの厚み
で15μmを最大粒径とする微粉層が形成されていた。
この成形体をN雰囲気で1800℃に加熱し、金属S
iを溶融して含浸させ、板状のSiC−Si系複合セラ
ミックスを得た。該板状セラミックスは、SiC80重
量%、Si20重量%の成分からなり、見掛気孔率0.
1%、室温曲げ強度300MPaの特性を有していた。
この板状セラミックスの表面平滑度はRa=1μmのレ
ベルに達しており、更に表面研磨することによりRa=
0.002μmまで可能となった。なお、表面層がみら
れない同材質の板状セラミックスの表面平滑度はRa=
10μmであり、表面に粗粒が存在しているため、表面
研磨しても平滑度は向上しなかった。
The present invention will be described below with reference to examples. A uniform slurry was prepared by dispersing and mixing SiC particles having an average particle diameter of 3 μm and a maximum particle diameter of 180 μm in water using methyl cellulose as an organic binder. The porosity of this slurry is 44
% Of using plaster mold, 1.0 Kg / by solid casting method while applying a pressure of cm 2 300mm × 300mm × 7m
m was formed. A fine powder layer having a thickness of 100 μm and a maximum particle size of 15 μm was formed on the surface of the molded body.
This compact is heated to 1800 ° C. in an N 2 atmosphere to
i was melted and impregnated to obtain a plate-like SiC-Si-based composite ceramic. The plate-like ceramic was composed of 80% by weight of SiC and 20% by weight of Si, and had an apparent porosity of 0.1%.
1%, room temperature flexural strength of 300 MPa.
The surface smoothness of this plate-shaped ceramic has reached the level of Ra = 1 μm, and the surface is further polished to obtain Ra = 1 μm.
It became possible to 0.002 μm. The surface smoothness of a plate-shaped ceramic of the same material without a surface layer is Ra =
Since the particle size was 10 μm and coarse particles were present on the surface, the smoothness was not improved even if the surface was polished.

【0007】[0007]

【発明の効果】以上のとおり、本発明の板状SiC−S
i系複合セラミックスの製造方法によれば、近年、広く
用いられてきた強度、耐酸化性に優れたSiC−Si系
材料を平滑度の非常に良い板状セラミックスとして用い
ることが可能となった。電子部品やセラミックス粉体焼
成など広い分野での熱処理工程に用いることができ大き
な効果が期待できる。
As described above, the plate-like SiC-S of the present invention is used.
According to the method for producing an i-type composite ceramic, a SiC-Si-based material having excellent strength and oxidation resistance, which has been widely used in recent years, can be used as a plate-like ceramic having very good smoothness. It can be used for heat treatment processes in a wide range of fields such as firing of electronic parts and ceramic powder, and great effects can be expected.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 SiC75〜85重量%とSi25〜1
5重量%を主成分とする板状SiC−Si系複合セラミ
ックスにおいて、最大粒径200μmからサブミクロン
まで粒配されたSiC粒に添加剤と溶媒を加え泥しょう
としたのち、固型鋳込法により板状に成形し、該成形体
の表面層50〜200μmに、粒径25μm以下の微粉
のみからなる層を形成せしめ、該成形体を非酸化雰囲気
で1500℃以上の高温下でSiを含浸させたことを特
徴とする板状SiC−Si系複合セラミックスの製造方
法。
1. 75% to 85% by weight of SiC and 25% to 1% of Si
In a plate-shaped SiC-Si-based composite ceramic containing 5% by weight as a main component, an additive and a solvent are added to SiC particles having a maximum particle size of 200 μm to submicron to form a slurry, and then solid casting is performed. To form a layer consisting of only fine powder having a particle size of 25 μm or less on the surface layer of 50 to 200 μm, and impregnating the molded body with Si at a high temperature of 1500 ° C. or more in a non-oxidizing atmosphere. A method for producing a plate-shaped SiC-Si-based composite ceramics, characterized in that:
【請求項2】 上記請求項1の固型鋳込法において、気
孔率40%以上の石膏材料を成形型として用いる請求項
1記載の板状SiC−Si系複合セラミックスの製造方
法。
2. The method for producing a plate-like SiC-Si-based composite ceramic according to claim 1, wherein the gypsum material having a porosity of 40% or more is used as a mold in the solid casting method according to claim 1.
JP36969597A 1997-12-10 1997-12-10 Production of plate silicon carbide-silicon composite ceramic Pending JPH11171671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36969597A JPH11171671A (en) 1997-12-10 1997-12-10 Production of plate silicon carbide-silicon composite ceramic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36969597A JPH11171671A (en) 1997-12-10 1997-12-10 Production of plate silicon carbide-silicon composite ceramic

Publications (1)

Publication Number Publication Date
JPH11171671A true JPH11171671A (en) 1999-06-29

Family

ID=18495092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36969597A Pending JPH11171671A (en) 1997-12-10 1997-12-10 Production of plate silicon carbide-silicon composite ceramic

Country Status (1)

Country Link
JP (1) JPH11171671A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001348288A (en) * 2000-06-05 2001-12-18 Toshiba Corp Particle-dispersed silicon material and method of producing the same
JP2014108896A (en) * 2012-11-30 2014-06-12 Nihon Ceratec Co Ltd SiC/Si COMPOSITE MATERIAL BODY AND METHOD OF PRODUCING THE SAME
JP2015124124A (en) * 2013-12-26 2015-07-06 日本ファインセラミックス株式会社 PRODUCTION METHOD OF SiC-METAL COMPOSITE MATERIAL BODY
CN115956064A (en) * 2020-09-07 2023-04-11 日本碍子株式会社 Refractory material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001348288A (en) * 2000-06-05 2001-12-18 Toshiba Corp Particle-dispersed silicon material and method of producing the same
JP2014108896A (en) * 2012-11-30 2014-06-12 Nihon Ceratec Co Ltd SiC/Si COMPOSITE MATERIAL BODY AND METHOD OF PRODUCING THE SAME
JP2015124124A (en) * 2013-12-26 2015-07-06 日本ファインセラミックス株式会社 PRODUCTION METHOD OF SiC-METAL COMPOSITE MATERIAL BODY
CN115956064A (en) * 2020-09-07 2023-04-11 日本碍子株式会社 Refractory material

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