JPH11150215A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To decrease the warping of a semiconductor element mounted by a TAB method and to improve the strength of the semiconductor element itsef at the same time by providing the protective film of a heat shrinkable resin on the main surface and providing a heat shrinking resin on the back surface. SOLUTION: First and second circut protective films 3 and 4 comprising glass-based material and polyimide resin are applied and formed under a wafer state. The formation of a back-surface layer 5 comprising the polyimide resin is conducted by applying the resin by a spinner on the back surface of the wafer and thereafter heating the resin at 20 deg.C for 30 minutes. Then, even if warping of the wafer is generated due to shrinking due to at the forming time of the second circuit protective film, the warping due to the shrinking of the second circut protective film 4 made of the polyimide resin is offset by the shrinking of the polyimide resin forming the back surface film 5. Therefore, as a result the warping of the wafer is decreased. By cutting out the wafer in a chip shape, the semiconductor device, wherein the warping is less when the shape is made thin and long, is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly to a warp and strength of a semiconductor element mounted by a TAB method.

[0002]

2. Description of the Related Art In recent years, portable devices have tended to be smaller and lighter. In addition to keeping the manufacturing cost of the portable device low, further miniaturization of the semiconductor element used is desired. For this reason, the semiconductor element used is longer than before. this is,
This is because, as compared with a semiconductor element having a shape close to a square, a rectangular and elongated element can be mounted with a small width.

When a semiconductor device is elongated, a device which has conventionally been controlled by a plurality of semiconductor devices in some device can be controlled by a smaller number of semiconductor devices. This is because, when arranging bonding pads on a semiconductor element, the number of arrangement is limited by the length of a side of the semiconductor element,
This is because the electrical connection with the outside is limited. If the longer side of the elongated semiconductor element is made longer, the number of semiconductor elements to be used is reduced and cost reduction can be achieved.

[0004]

However, as the shape of the semiconductor element becomes slender, the semiconductor element is more likely to be warped. This warpage is caused by the shrinkage of the resin when a protective film made of a resin such as a polyimide resin is formed for the purpose of protecting the circuit patterning surface of the semiconductor element in the cross-sectional view of the conventional semiconductor device shown in FIG. Occurs.
This warpage tends to occur in the longitudinal direction of the semiconductor element.

The warpage of the semiconductor element has an adverse effect on a bonding step during mounting. Especially TAB (Tape Autom
When the semiconductor device is warped when mounted on a package of the eted bonding type, a displacement occurs between the inner lead and the bonding pad. The mounting by the TAB method is suitable for manufacturing a miniaturized portable device because the cut-out dimensions are (semiconductor element + tape-shaped lead terminals) and high-density mounting can be realized. However, if this displacement occurs, good bonding cannot be obtained, and the possibility of lowering the bonding strength increases. It is necessary to take some measures capable of reducing the warpage of the semiconductor element and improving the strength at the same time.

Further, as the shape of the semiconductor element becomes elongated, there is a problem that the strength in the longitudinal direction is reduced. At the time of bonding or transporting a semiconductor element, or at the time of mounting on a device or a substrate, the semiconductor element tends to be chipped or damaged by external stress.

The problem to be solved by the present invention is TAB
An object of the present invention is to provide a semiconductor device capable of reducing warpage of a semiconductor element mounted by a method and improving the strength of the semiconductor element itself, and a method of manufacturing the same.

[0008]

According to the present invention, there is provided a semiconductor device having a protection film made of a heat-shrinkable resin on a main surface on which a circuit of a semiconductor element mounted by a TAB method is patterned, A heat-shrinkable resin layer is provided on the back surface.

Further, the semiconductor device of the present invention is characterized in that the heat-shrinkable resin is made of a polyimide resin or an epoxy resin.

[0010] The method of manufacturing a semiconductor device according to the present invention comprises the steps of:
Forming a protective film made of a heat-shrinkable resin on a patterned main surface of a circuit of a semiconductor element to be mounted by a method, and forming a heat-shrinkable resin layer on a back surface. I do.

Further, a method of manufacturing a semiconductor device according to the present invention
The step of forming a heat-shrinkable resin layer on the main surface and the back surface of the semiconductor element is performed in a wafer state.

Further, the method of manufacturing a semiconductor device according to the present invention is characterized in that the heat-shrinkable resin is a polyimide resin or an epoxy resin.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a semiconductor device and a method of manufacturing the same according to the present invention will be described. In the semiconductor device of the present invention, not only the main surface on which the circuit of the semiconductor element is patterned but also the back surface on which the circuit of the semiconductor substrate is not patterned, a layer made of a heat-shrinkable resin which shrinks when heated. Film) is formed. This resin layer serves as a circuit protection film also formed on a conventional general semiconductor substrate.

On the other hand, the resin layer formed on the surface where the circuit is not patterned is formed by heating and shrinking the resin to be the circuit protective film when the circuit protective film is formed in the semiconductor device manufacturing process. This is provided to prevent the semiconductor substrate from warping. That is,
In the manufacturing process of the semiconductor device, the warpage that occurs due to the resin shrinking at the time of forming the circuit protective film formed on the main surface where the circuit is patterned is applied by shrinking the resin on the back surface of the semiconductor substrate, This is to offset and alleviate the warpage. This back layer simultaneously serves as a protective layer for the semiconductor substrate.

In the method of manufacturing a semiconductor device according to the present invention, as described above, the warpage of the semiconductor element occurs because the protective film formed of resin on the main surface on which the circuit is patterned shrinks in the forming step. A step of applying a heat-shrinkable resin to the surface opposite to the surface on which the circuit is patterned, that is, the back surface. Until now, the shrinkage that had occurred only in the protective film on the main surface of the circuit patterning,
By applying a heat-shrinkable resin also to the back surface, the back surface side is also shrunk, thereby canceling the warpage of both surfaces and reducing the warpage of the semiconductor element as a whole.

The resin applied to the back surface of the semiconductor element is not limited to the same resin protective film applied and formed on the main surface of the circuit patterning. Generally, a heat-shrinkable polyimide resin is used for the protective film. However, it is also possible to use another heat-shrinkable resin such as an epoxy resin. In this case, it is desirable that the resin applied to the main surface serving as the protective film and the resin applied to the back surface have substantially the same heat shrinkability.

Since a semiconductor element with reduced warpage is obtained, no displacement occurs between the inner leads and the bonding pads even in the step of mounting the package by the TAB method, and good mounting is achieved.

Further, by forming the resin layer on the back surface of the semiconductor element, the effect of improving the strength of the semiconductor element itself against external stress can be obtained. Thereby, the strength of the elongated semiconductor element can be improved.

[0019]

Embodiment 1 An embodiment of a semiconductor device according to the present invention and a method for manufacturing the same will be described below. FIG. 1 is a sectional view illustrating a semiconductor device according to a first embodiment of the present invention. In the method of manufacturing a semiconductor device according to the present invention, first, the circuit 2 on the semiconductor substrate 1
A first circuit protective film 3 made of a glass-based material and a second circuit
Is formed. This glass-based substance is formed for the purpose of protecting a semiconductor device from contamination by moisture and other chemical substances. In the step of heating and solidifying after coating and forming the first circuit protection film 3 and the second circuit protection film 4 made of a polyimide resin, the semiconductor substrate 1 is warped due to shrinkage of the resin serving as the circuit protection film. .

Therefore, the back surface layer 5 made of polyimide resin is also provided on the surface B on which the circuit 2 is not patterned, that is, on the back surface.
Is applied and formed. The polyimide resin is also used for forming the second circuit protection film 4 and is easily diverted. This step of applying and forming the first circuit protection film 3 made of a glass-based material, the second circuit protection film 4 made of a polyimide resin, and the back surface layer 5 is performed in a state of a wafer before the semiconductor device is cut into elements. Then, it can be satisfactorily performed by cutting into chip shapes. The back surface layer 5 made of a polyimide resin is formed by applying a spinner to the back surface of the wafer and then heating the wafer at 200 ° C. for 30 minutes.

Although the wafer is warped by the shrinkage generated when the second circuit protective film 4 made of a polyimide resin is formed, the second circuit made of a polyimide resin is formed by forming the back surface layer 5 and shrinking the polyimide resin. The warpage caused by the shrinkage of the protective film 4 is offset, and as a result, the warpage of the wafer is reduced. By cutting this wafer into chip shapes, a semiconductor device with less warpage even when the wafer is elongated can be obtained.

The strength of the semiconductor element itself is improved by forming the back surface layer 3. Accordingly, resistance to stress applied to the semiconductor element in a transport process after being cut into a chip shape, an assembling process such as bonding, a mounting process by a TAB method, and the like is improved, and chipping and breakage of the chip are reduced.

Embodiment 2 Another embodiment of the present invention will be described. FIG. 2 is a sectional view illustrating a semiconductor device according to a second embodiment of the present invention. Unlike the first embodiment, in this embodiment, the resin of the back surface layer 5 'formed on the back surface of the semiconductor substrate 1, that is, the surface B on which the circuit 2 is not patterned is an epoxy resin. This is different from the second circuit protection film 4 made of a polyimide resin. As in the present embodiment, the material of the back surface layer 5 only needs to have heat shrinkage, and various materials can be used instead. In particular, in order to favorably cancel the warpage generated on the main surface and the back surface, respectively, the heat shrinkability of the resin used to form the second circuit protection film 4 made of a polyimide resin and the back surface layer 5 are formed. It is preferable that the heat shrinkability of the resin used for the heat treatment is the same.

[0024]

As described above, the present invention has the following excellent effects. The semiconductor device of the present invention and the method of manufacturing the same are characterized in that, in the manufacturing process, a circuit formed on the main surface by forming a heat-shrinkable resin layer on the back side of the semiconductor element, that is, on the surface where the circuit is not patterned Warpage due to shrinkage of the protective film can be offset. Thereby, when the semiconductor element is mounted on the TAB type package, the displacement generated between the inner lead and the bonding pad can be reduced, and the bonding strength can be improved.

Further, by forming a heat-shrinkable resin layer on the back surface side of the semiconductor element, the semiconductor element can be protected from stress and the strength of the semiconductor element itself can be improved. This can reduce chipping or breakage of the semiconductor element due to stress applied during transportation, bonding, mounting, and the like of the semiconductor element.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a cross-sectional view of a conventional semiconductor device.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor substrate 2 patterned circuit 3 first circuit protection film (glass-based material) 4 second circuit protection film (polyimide resin) 5, 5 ′ back layer A surface on which circuit is patterned B circuit is patterned Not face

Claims (5)

[Claims] A circuit of a semiconductor element mounted by a TAB method has a protective film made of a heat-shrinkable resin on a patterned main surface and a heat-shrinkable resin layer on a back surface. Semiconductor device. 2. The semiconductor device according to claim 1, wherein the heat-shrinkable resin is made of a polyimide resin or an epoxy resin. 3. A step of forming a protective film made of a heat-shrinkable resin on a main surface on which a circuit of a semiconductor element mounted by a TAB method is patterned, and a step of forming a layer of a heat-shrinkable resin on a back surface. A method for manufacturing a semiconductor device, comprising: 4. The method of manufacturing a semiconductor device according to claim 3, wherein the step of forming a heat-shrinkable resin layer on the main surface and the back surface of the semiconductor element is performed in a wafer state. 5. The method according to claim 3, wherein the heat-shrinkable resin is a polyimide resin or an epoxy resin.