JPH11150212A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which mill not cause delays or attenuation, even for signals in a high frequency range and can have high functions and high reliability, capable of coping with even high-speed processing of information. SOLUTION: This semiconductor device includes a semiconductor element 3, an insulating substrate 1 having a semiconductor-element mounting part 1a and a wiring layer 4, external lead terminals 2, and a molding resin 7. The substrate 1 is made of a sintered material, which has a relative permittivity of 6 or less and which contains a crystalline phase of a type of at least one of quartz, cristobalite, tridymite and enstatite, and which is obtained by sintering a molded body containing 20-80 volume% of lithium silicate glass having 5-30 weight% of Li2 O and having a yield point of 400 to 800 deg.C and also containing 20-80 volume% of filler component of a type of at least one of quartz, cristobalite, tridymite, enstatite and forsterite. The wiring layer 4 is covered in part of periphery with an auxiliary film 4a containing ferrite powder.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for an information processing device such as a computer, and more particularly to a semiconductor device in which a semiconductor element is molded with a resin.

[0002]

2. Description of the Related Art Conventionally, a mold type semiconductor device used for an information processing apparatus such as a computer is made of an electrically insulating material using ceramics such as an aluminum oxide sintered body or a mullite sintered body. An insulating base having a mounting portion for mounting the semiconductor element in the center and a large number of wiring layers which are led out in a fan shape from the periphery of the mounting portion to the outer peripheral portion; and an inner end of the wiring layer at the outer peripheral portion of the insulating base. A lead frame is prepared by integrally connecting a large number of external lead terminals arranged at substantially the same interval with a frame-like connecting band at the outer end, and external leads are provided on the wiring layer of the insulating base. The inner ends of the terminals are joined via a brazing material such as silver brazing, solder, or gold tin brazing. Thereafter, the semiconductor element is mounted and fixed on the mounting portion of the insulating base, and each electrode of the semiconductor element is connected to the wiring layer. And electrically connected through the bonding pad and finally the insulating substrate, it is fabricated by coating a portion of the molding resin of the semiconductor device and the external lead terminals.

[0003] The external lead terminals are cut off and separated from the frame-shaped connecting band to make each external lead terminal electrically independent and to connect each external lead terminal to an external electric circuit. Are electrically connected to an external electric circuit.

In such semiconductor devices, in recent years, with the rapid increase in the speed and integration of information processing devices, electric signals in a high frequency range have been used for information processing.

[0005]

However, in the above-mentioned conventional semiconductor device, since the insulating base is made of ceramics, when the insulating base is made of an aluminum oxide sintered body, its relative dielectric constant is about 10%. 10 and high
Therefore, there is a problem that a signal in a high-frequency region propagating through a wiring layer adhered to an insulating substrate is delayed, which hinders high-speed processing.

When ceramics are used for the insulating base, it is necessary to use a high melting point metal such as tungsten or molybdenum for the wiring layer. However, since the wiring layer made of such a high melting point metal has a high wiring resistance value, This also causes a problem that a signal in a high frequency region is delayed or a signal is greatly attenuated, which hinders high-speed processing.

Further, a semiconductor element which performs high-speed driving is extremely susceptible to noise. If noise enters a wiring layer from an external electric circuit, the noise enters the semiconductor element as it is via the wiring layer, causing the semiconductor element to malfunction. There were also problems.

The present invention has been devised in view of the above circumstances, and has as its object to provide a high-speed signal capable of coping with high-speed processing of information without causing signal delay or attenuation even in a high-frequency range signal. It is to provide a semiconductor device with high function and high reliability.

It is another object of the present invention to satisfactorily absorb noise entering a wiring layer from an external electric circuit, effectively prevent noise from entering a semiconductor element, and operate the semiconductor element normally. It is an object of the present invention to provide a possible semiconductor device.

[0010]

According to the present invention, there is provided a semiconductor device comprising:
An insulating base having a mounting portion on which the semiconductor element is mounted at the center of the upper surface and a wiring layer extending from the periphery of the mounting portion to the outer peripheral portion; and an insulating substrate mounted on the mounting portion of the insulating base, and an electrode connected to the wiring layer. A semiconductor element comprising: a semiconductor element, an external lead terminal attached to the wiring layer and connecting the semiconductor element to an external electric circuit; and a mold resin covering a part of the insulating base, the semiconductor element and the external lead terminal. 20. An apparatus according to claim 19, wherein said insulating substrate comprises 5 to 30% by weight of lithium silicate glass having a deformation point of 400 to 800 ° C. and containing 5 to 30% by weight of Li ₂ O, and 20 to 80% by volume of quartz, cristobalite, tridymite, enstatite, and phorite. 20 to 80 filler components comprising at least one stellite
A sintered body having a relative dielectric constant of 6 or less containing at least one crystal phase of quartz, cristobalite, tridymite, and enstatite, which is obtained by sintering a molded body containing at a volume percentage of: In addition, a part of the periphery of the wiring layer is covered with an auxiliary film containing ferrite powder.

Further, in the semiconductor device according to the present invention, the wiring layer is made of a metal containing copper and silver as main components.

Further, in the semiconductor device according to the present invention, the auxiliary film contains 5 to 30% by weight of Li ₂ O and has a deformation point of 400 to 8%.
10 to 50 parts by weight of glass ceramic containing 20 to 80% by volume of lithium silicate glass at 00 ° C. and 20 to 80% by volume of a filler component composed of at least one of quartz, cristobalite, tridymite, enstatite and forsterite. And ferrite powder 50 to 90
And parts by weight.

According to the semiconductor device of the present invention, as the insulating base in the mold type semiconductor device, Li ₂ O is used in an amount of 5 to 5%.
20 to 80% by volume of lithium silicate glass having a deformation point of 400 to 800 ° C. containing 30% by weight, and 20 filler components of at least one of quartz, cristobalite, tridymite, enstatite and forsterite.
Obtained by sintering a compact containing at a rate of ~ 80% by volume,
Since a sintered body containing at least one crystal phase of quartz, cristobalite, tridymite, and enstatite and having a relative dielectric constant of 6 or less was used, the relative dielectric constant was very low with respect to an electrically insulating material such as ceramics. As a result, the semiconductor device can sufficiently cope with high-speed processing of information without causing a delay that causes a problem in a signal in a high-frequency region propagating through a wiring layer formed on the insulating base. Becomes

As described above, 20 to 80% by volume of a lithium silicate glass having a deformation point of 400 to 800 ° C. containing 5 to 30% by weight of Li ₂ O as the insulating substrate, quartz, cristobalite, tridymite, enstatite, By sintering a compact containing 20 to 80% by volume of a filler component composed of at least one forsterite, a dielectric material having a crystal layer of at least one of quartz, cristobalite, tridymite, and enstatite A sintered body having a ratio of 6 or less can be easily produced with good reproducibility.

Further, by using Li ₂ O as an essential component as the glass and using lithium silicate glass having a content of 5 to 30% by weight, lithium silicate (for example, Li ₂ Si ₂ 0 ₅₎ can precipitate, moreover, the yield point is 400 ° C. to 800 ° C. and comparatively low, since even with a small amount of glass that can be low-temperature firing, a metal mainly composed of copper It can be fired simultaneously with the wiring layer formed.

Further, by mixing quartz, cristobalite, tridymite, enstatite, and forsterite as a filler component and appropriately controlling the ratio thereof, the relative dielectric constant of the glass ceramic sintered body can be arbitrarily set within a range of 6 or less. Can be controlled.

Further, the deformation point of lithium silicate glass is 4
By setting the temperature to 00 ° C. to 800 ° C., the glass content can be reduced, the filler component content can be increased, and the firing shrinkage starting temperature can be increased. This makes it possible to efficiently remove a molding binder such as an organic resin added at the time of molding, and to match firing conditions with a wiring layer fired simultaneously with the insulating substrate.

By forming a crystal phase of quartz, cristobalite, tridymite, and enstatite in the sintered body, their relative dielectric constants εr are as low as 3 to 4, so that their electrical characteristics are low. Is achieved. The relative permittivity of the sintered body is 1nε _composite − V _filler 1nε _filler + (1 − V)
_filler is determined by the logarithmic rule of 1nε _matrix , so simply ε _filler and ε
What is necessary is just to select the _matrix whose _matrix is 6 or less.

Further, according to the semiconductor device of the present invention, the wiring layer extending from the periphery of the mounting portion where the semiconductor element is mounted at the center of the upper surface of the insulating base to the outer peripheral portion is made of a metal mainly composed of copper and silver. Therefore, since the wiring resistance of the wiring layer is low, there is no delay in the signal in the high-frequency region or an increase in the attenuation of the signal, which does not hinder the high-speed processing of information.

Examples of the metal mainly composed of copper and silver used for the wiring layer include copper, Cu ₂ O, CuO, silver, silver-platinum, silver-palladium, copper-nickel, copper-zinc, and alloys thereof. In particular, when copper or Cu ₂ O is used, no migration occurs and a low-cost wiring layer can be obtained.

Therefore, according to the present invention, there is provided a high-performance, highly-reliable semiconductor device which does not cause signal delay or attenuation even for signals in a high-frequency region, and can cope with high-speed processing of information. be able to.

Further, according to the semiconductor device of the present invention, since a part of the wiring layer formed on the insulating base is covered with the auxiliary film containing the ferrite powder, noise from the external electric circuit is generated in the wiring layer. When the noise enters, the noise is converted into thermal energy by the ferrite powder and absorbed, so that the noise does not directly enter the semiconductor element via the wiring layer, and the semiconductor element can operate normally.

As the ferrite powder contained in the auxiliary layer, Ni—Zn ferrite (Ni—Cu—Zn—Fe—O), ferroxplanar ferrite (Ba—Sr—Co—Zn—Fe—O) or the like is used. When the frequency of the electric signal is in the range of 30 to 300 MHz, the use of Ni—Zn ferrite selectively and appropriately absorbs noise propagating in the wiring layer, and the frequency of the electric signal is 300 MHz.
If the frequency is higher than or equal to Hz, the noise propagating through the wiring layer can be selectively and favorably absorbed by using the ferro-planar ferrite.

The auxiliary layer contains 20% to 80% by volume of lithium silicate glass having a deformation point of 400 to 800 ° C. containing 5 to 30% by weight of Li ₂ O, quartz, cristobalite,
20 to 80% by volume of a filler component comprising at least one of tridymite, enstatite and forsterite
If the glass ceramic is formed by 10 to 50 parts by weight of ferrite powder and 50 to 90 parts by weight of ferrite powder, the coefficient of linear thermal expansion of the auxiliary film is close to the coefficient of linear thermal expansion of the insulating substrate, and the auxiliary film is insulated. It can be firmly joined around a part of the wiring layer provided on the base.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. (Structure of Semiconductor Device) FIG. 1 is a sectional view showing an embodiment of a semiconductor device according to the present invention, wherein 1 is an insulating base, 2 is an external lead terminal, and 3 is a semiconductor element.

The insulating substrate 1 has a mounting portion 1a in the center of the upper surface on which the semiconductor element 3 is mounted. The semiconductor element 3 is mounted on the mounting portion 1a by being adhered and fixed via an adhesive such as resin. Is done.

The insulating substrate 1 has wiring layers 4 extending from the periphery of the mounting portion 1a to the outer peripheral portion, and these are formed as a plurality of wiring layers 4 extending in a fan shape, for example. . Each electrode of the semiconductor element 3 is electrically connected to a portion around the mounting portion 1a of the wiring layer 4 via a bonding wire 5, while an external lead connected to an external electric circuit is provided at an outer peripheral portion of the insulating base 1. Terminal 2 is attached. The semiconductor element 3 and the wiring layer 4 may be connected via a bonding ribbon, or may be connected via a solder bump by so-called flip chip mounting.

The wiring layer 4 is made of tungsten, molybdenum,
Materials made of various metal materials such as manganese, aluminum, copper, and silver can be used. Among them, the use of a metal material containing copper or silver as a main component as described above reduces the wiring resistance. This makes it possible to suppress signal attenuation and delay, thereby making it suitable for signal processing in a high-frequency region, and eliminating peeling or disconnection from the insulating base 1, which is preferable for the semiconductor device of the present invention. Become.

When the wiring layer 4 is formed using such a metal material containing copper or silver as a main component, a metal paste obtained by adding and mixing an appropriate binder or solvent to powder of such a metal material is used. Is applied in a predetermined pattern to a pre-fired molded body or sheet serving as the insulating substrate 1 by a known thick film method such as a screen printing method, so that the coating is applied from the periphery of the mounting portion 1a of the insulating substrate 1 to the outer peripheral portion. Is formed. Alternatively, as in the case of aluminum or the like, a metal film having a predetermined thickness is deposited on the upper surface of the insulating base 1 by a vapor deposition method, a sputtering method, or the like, and then the metal film is formed into a predetermined pattern by a conventionally known photolithography technique. Alternatively, the substrate may be formed on the insulating substrate 1 from the periphery of the mounting portion 1a to the outer peripheral portion.

The wiring layer 4 is partially covered with an auxiliary film 4a containing ferrite powder.
The auxiliary film 4a selectively converts the noise that has entered the wiring layer 4 from the external electric circuit into thermal energy and absorbs it, so that the noise that has entered the wiring layer 4 directly enters the semiconductor element 3 via the wiring layer 4. Without this, the semiconductor element 3 can be operated normally. As the auxiliary film 4a, Ni—Zn ferrite (Ni—Cu—Zn—Fe
-O), ferro-planar ferrite (Ba-Sr)
-Co-Zn-Fe-O) or the like is used, and if the frequency of the electric signal is in the range of 30 to 300 MHz, the use of Ni-Zn ferrite selectively and satisfactorily absorbs noise propagating in the wiring layer. , The frequency of the electric signal is 300
If the frequency is higher than MHz, the noise propagating through the wiring layer can be selectively and favorably absorbed by using the ferro-planar ferrite.

The auxiliary film 4a is composed of 20% to 80% by volume of lithium silicate glass having a deformation point of 400 to 800 ° C. containing 5 to 30% by weight of Li ₂ O, and of quartz, cristobalite, tridymite, enstatite and forsterite. When formed of 10 to 50 parts by weight of a glass ceramic containing at least one filler component at a ratio of 20 to 80% by volume and 50 to 90 parts by weight of a ferrite powder, the coefficient of linear thermal expansion of the auxiliary film 4 a is insulated. The auxiliary film 4a can be firmly joined to a part of the periphery of the wiring layer 4 formed on the insulating substrate 1 by approximating the linear thermal expansion coefficient of the substrate 1.

The coating of the wiring layer 4 with the auxiliary film 4a is performed by adding a suitable organic resin binder, a plasticizer, and a solvent to a raw material powder composed of lithium silicate glass, a filler, and a ferrite powder to form a ferrite paste. The area where the wiring layer 4 of the green sheet to be the insulating base 1 is formed is printed and applied in advance by a screen printing method or the like, so that the green sheet is formed on a part of the periphery of the wiring layer 4 by co-firing with the insulating base 1.

Further, the external lead terminals 2 attached to the wiring layer 4 serve to connect the semiconductor element 3 housed inside the semiconductor device to an external electric circuit, and connect the external lead terminals 2 to the external electric circuit board. By connecting to the wiring conductor, the semiconductor element 3 is electrically connected to an external electric circuit via the wiring layer 4 and the external lead terminal 2.

When the wiring layer 4 to which the external lead terminal 2 is attached extends fan-wise from the periphery of the mounting portion 1a of the insulating substrate 1 to the outer peripheral portion, the wiring at the outer peripheral portion of the insulating substrate 1 Since the line width of the layer 4 and the space between the adjacent wiring layers 4 are wide, the line width and the space between adjacent layers can be widened. As a result, an external force is applied to the external lead terminals 2. Even if the external lead terminals 2 are not greatly deformed, the external lead terminals 2 can be accurately and reliably connected to a predetermined external electric circuit while maintaining electrical insulation between the adjacent external lead terminals 2. Electrical connection is possible.

The external lead terminal 2 is made of a metal such as a copper alloy containing copper as a main component or an iron alloy containing iron as a main component. For example, an ingot of a copper alloy containing copper as a main component is used. Is formed into a plate having a predetermined thickness by using a conventionally known rolling method, and is subjected to etching or punching to form a predetermined shape.

The external lead terminals 2 are attached to the wiring layer 4 by attaching the external lead terminals 2 to the wiring layer 4 using a brazing material made of a gold-tin-lead-silver alloy, a gold-tin-lead-palladium alloy, or the like. Or by ultrasonic bonding the external lead terminal 2 to the wiring layer 4, specifically, placing the external lead terminal 2 on the upper surface of the wiring layer 4, and then attaching the external lead terminal 2 to the external lead terminal 2. Ultrasonic vibrator (horn) 0.5-5.0kg
f / mm ^{2 and} a vibration frequency of 20-60.
Ultrasonic vibration with a frequency of 1.0 kHz and a frequency of 1.0 to 10.0.
This is performed by applying the voltage for 3 to 1.0 seconds.

Here, reference numeral 6 denotes an insulating coat formed on a part of the surface of the wiring layer 4 for the purpose of improving the bonding strength between the wiring layer 4 and the mold resin 7 and reinforcing the wiring layer 4.
This is formed by printing a paste using the same material as the insulating substrate 1 to have a thickness of several μm to several hundred μm. The insulating coat 6 is not always required.

The insulating base 1 on which the semiconductor element 3 is mounted and the external lead terminal 2 is attached is connected to the external lead terminal 2.
Molding resin 7 made of epoxy resin or the like except for a part of
And completely shields the semiconductor element 3 from the outside air to form a semiconductor device as a final product.

The coating with the molding resin 7 is performed by setting the insulating substrate 1 on which the semiconductor element 3 is mounted on the upper surface and the external lead terminal 2 is attached in a predetermined jig, and setting the jig in the jig by, for example, epoxy or the like. The liquid resin is dropped and injected, and then the injected resin is cooled to a temperature of about 180 ° C. and 100 kg.
This is performed by applying heat at a pressure of f / mm ² and thermally curing.

Thus, the semiconductor device of the present invention is used for an information processing device such as a computer by connecting the external lead terminal 2 to an external electric circuit and electrically connecting the internal semiconductor element 3 to the external electric circuit. The Rukoto.

FIG. 2 is a sectional view showing another example of the embodiment of the semiconductor device of the present invention.

In the figure, the same members as those in FIG. 1 are denoted by the same reference numerals. In the semiconductor device shown in FIG.
Is an insulating base composed of a multilayer wiring board in which a plurality of layers are stacked and a wiring layer is disposed inside, 2 is an external lead terminal,
Is a semiconductor element, 5 is a bonding wire, and 7 is a mold resin.

The insulating base 8 has a mounting portion 8a on which the semiconductor element 3 is mounted at the center of the upper surface, and the semiconductor element 3 is mounted on the mounting portion 8a by being adhered and fixed via an adhesive such as resin. Is done.

The insulating base 8 has a wiring layer 9 extending from the periphery of the mounting portion 8a to the outer periphery. In this example, the wiring layer 9 is provided on the surface of a predetermined layer constituting the insulating base 8. By the formed wiring patterns and through conductors such as through holes and via holes that connect the wiring patterns through predetermined layers, a plurality of fan-shaped portions extending from the periphery of the mounting portion 8a of the insulating base 8 to the outer periphery are formed. The wiring layer 9 is configured. Mounting part 8 of this wiring layer 9
Each electrode of the semiconductor element 3 is electrically connected to the peripheral portion via a bonding wire 5, while an external lead terminal 2 connected to an external electric circuit is attached to an outer peripheral portion of the insulating base 8. I have. The semiconductor element 3 and the wiring layer 9 may be connected via a bonding ribbon, or may be connected via a solder bump by so-called flip chip mounting.

The wiring layer 9 is formed using the same material as that of the wiring layer 4 in the same manner as in a conventionally known multilayer wiring board.

When the wiring layer 9 is configured as a multilayer wiring board in this manner, a ground layer can be provided in the board when the power supply needs to be strengthened, or a plurality of semiconductor elements 3 can be mounted. In this case, it is possible to cope with a case where it is impossible to route wiring only on the substrate surface in order to form a so-called multi-chip module.

When the wiring layer 9 is formed, the material thereof may be basically the same as that of the wiring layer 4. However, the amount of the filler component such as glass or alumina which interacts with the material of the insulating substrate 8 may be added. It is advisable to use a system with less

The wiring layer 9 is partially covered with an auxiliary film 9a containing ferrite powder.
The auxiliary film 9a selectively converts the noise that has entered the wiring layer 9 from the external electric circuit into thermal energy and absorbs it, so that the noise that has entered the wiring layer 9 directly enters the semiconductor element 3 via the wiring layer 9. Without this, the semiconductor element 3 can be operated normally. Auxiliary film 9a
Is formed on a part of the periphery of the wiring layer 9 by using the same material as the auxiliary film 4a formed on a part of the periphery of the wiring layer 4 and using the same method as the auxiliary film 4a.

(Basic Material) According to the present invention, the insulating base of the semiconductor device is made of Li ₂ O of 5 to 30%.
20% to 80% by volume of a lithium silicate glass having a yield point of 400 ° C. to 800 ° C. and a filler component of at least one of quartz, cristobalite, tridymite, enstatite and forsterite in an amount of 20 to 80% by weight.
By sintering a compact containing 80% by volume,
A glass ceramic sintered body having at least one crystal phase of quartz, cristobalite, tridymite, and enstatite, having a relative dielectric constant of 6 (room temperature 1 MH)
z) Hereinafter, it is important that the sintered body is preferably composed of 3 to 6 sintered bodies. This is important in that a signal in a high-frequency region propagating through a wiring layer provided on the insulating base does not have a delay, and a high-speed signal processing can be performed with a high propagation speed of an electric signal in the wiring layer. And the relative permittivity is 6
If it is larger than (room temperature 1 MHz), signal delay in a high frequency region cannot be effectively suppressed, and there is a tendency that high speed processing cannot be supported. In addition, the reason that the relative dielectric constant is preferably 3 or more indicates that it is necessary to introduce minute pores into the sintered body in order to make the relative dielectric constant 4 or less.
If the relative dielectric constant is less than 3, the number of pores in the sintered body becomes too large, and the strength as an insulating base tends to be insufficient.

When the semiconductor element is bonded and fixed to the insulating base, it is preferable to appropriately select a flexible material such as a resin, an organic adhesive, and glass in order to reduce thermal stress. An epoxy-based or polyimide-based organic adhesive or a material obtained by adding a metal powder such as silver to this adhesive is preferably used.

According to the present invention, an insulating substrate comprising a low-permittivity glass ceramic sintered body containing a crystal phase having a relative permittivity of 3 to 4 such as quartz, cristobalite, tridymite, enstatite, etc. glass, i.e. a crystalline glass 20-80% by volume comprising 5 to 30 wt% of Li ₂ O quartz, cristobalite, tridymite, enstatite, and 20 to 80 volume percent filler component consisting of at least one of forsterite The crystal phase of quartz, cristobalite, tridymite, enstatite, which is a filler component obtained by firing a molded body containing, or the crystal phase of enstatite by reacting the silica of lithium silicate glass with forsterite It is composed of a sintered body that has generated a phase. The reason that the amounts of the crystalline glass and the filler component are limited to the above range is that if the amount of the crystalline glass is less than 20% by volume, in other words, if the amount of the filler component is more than 80% by volume, the liquid phase sintering cannot be performed. This is because it is necessary to fire at a high temperature, and in that case, if the wiring layers are simultaneously fired, the metal layer will melt. If the amount of crystalline glass is more than 80% by volume, in other words, if the amount of filler component is less than 20% by volume, the characteristics of the sintered body greatly depend on the characteristics of the crystalline glass, and it is difficult to control the material characteristics. In addition, the sintering start temperature is lowered, so that simultaneous firing with the wiring layer tends to be difficult, and the cost of the raw material increases.

The crystalline glass used in the present invention includes L
i ₂ O 5 to 30 wt%, preferably it is important to use a lithium silicate glass containing a proportion of 5 to 20 wt%, to precipitate lithium silicate by using such a lithium silicate glass Can be. Note that Li
_If the content of ₂ O is less than 5% by weight, the amount of lithium silicic acid crystals generated during sintering is small, and high strength cannot be achieved. If it is more than 30% by weight, the dielectric loss tangent is 100 × 10 ^−4.
Therefore, the characteristics as an insulating substrate for a semiconductor device deteriorate.

It is desirable that Pb is not substantially contained in the crystalline glass. This is because Pb is toxic, and containing Pb requires special equipment and control to prevent poisoning during the manufacturing process, so that sintered bodies cannot be manufactured at low cost. is there. In consideration of the case where Pb is inevitably mixed as an impurity, the amount of Pb is desirably 0.05% by weight or less.

Further, the deformation point of the crystalline glass is 400 ° C.
To 800 ° C., particularly 400 ° C. to 650 ° C., it is possible to efficiently remove a molding binder such as an organic resin added when molding a mixture comprising crystalline glass and a filler component, It is necessary to match the firing conditions with the wiring layer to be fired.
If the yield point is lower than 400 ° C., the crystalline glass starts sintering at a low temperature. For example, simultaneous firing with a wiring layer using a metal such as silver or copper having a sintering start temperature of 600 ° C. to 800 ° C. In addition, the densification of the compact starts at a low temperature, so that the binder cannot be decomposed and volatilized and remains in the sintered compact, resulting in no adverse effect on the properties of the sintered compact. On the other hand, if the yield point is higher than 800 ° C., sintering becomes difficult without increasing the amount of crystalline glass, and the cost of the sintered body is increased because a large amount of expensive crystalline glass is required. It is because it becomes.

[0055] As the crystalline glass which satisfies the above characteristics (lithium silicate glass), for example, SiO ₂ chromatography Li ₂ O over A1 ₂ O _3, SiO ₂ chromatography Li ₂ O over A1 ₂ O ₃ over MgO
—TiO ₂ SiO ₂ —Li ₂ O—A1 ₂ O ₃ —MgO—Na ₂ OF—, SiO ₂ —Li ₂ O—A1 ₂ O ₃ —K ₂
O-Na ₂ O-ZnO, SiO ₂ -Li ₂ O-A1 ₂ O
₂ -K ₂ O-P ₂ O ₅ , SiO ₂ -Li ₂ O-A1 ₂ O
Compositions such as ₃ -K ₂ O—P ₂ O ₅ —ZnO—Na ₂ O, SiO ₂ —Li ₂ O—MgO, and SiO ₂ —Li ₂ O—ZnO, among which SiO ₂ is lithium silicate Is an essential component to form
It is desirable for the presence of 85% by weight and that the total amount of SiO ₂ and Li ₂ O be 65 to 95% by weight based on the total amount of glass in order to precipitate lithium silicate crystals.

On the other hand, as the filler component, quartz,
20 to 80% by volume of at least one of cristobalite, tridymite, enstatite, and forsterite,
In particular, it is desirable to mix at a ratio of 30 to 70% by volume. The sintering of the sintered body can be promoted by the combination of such filler components. In particular, when the quartz / forsterite ratio is 0.427 or more, the dielectric constant of the forsterite having a high relative dielectric constant during sintering is reduced. It can be changed to enstatite with a low rate.

The amounts of the above-mentioned crystalline glass and filler component are desirably adjusted appropriately according to the yield point of the crystalline glass. That is, when the yield point of the crystalline glass is as low as 400 ° C. to 600 ° C., the sinterability at low temperature is increased, so that the content of the filler component can be relatively large as 50 to 80% by volume. On the other hand, when the yield point of the crystalline glass is as high as 650 ° C. to 800 ° C., the sinterability is reduced. It is desirable to control the yield point of the crystalline glass in accordance with the firing conditions of the wiring layer.

Further, the lithium silicate glass has a shrinkage initiation temperature of 700 ° C. or less and 850 ° C.
Above, it melts and the wiring layers 4 and 9 are
No. 8 cannot be formed by simultaneous firing. However, if the filler component is mixed at a ratio of 20 to 80% by volume, the firing temperature can be increased to form a liquid phase for crystal precipitation and liquid phase sintering of the filler component. By adjusting the content of the filler component, the simultaneous firing conditions of the insulating bases 1 and 8 and the wiring layers 4 and 9 can be matched. Further, the content of expensive lithium silicate glass can be reduced in order to lower the raw material cost.

For example, when the wiring layer is formed of a metal material containing copper or silver as a main component, the firing of these metal layers is performed at 600 to 1100 ° C. Yield point is 400 ℃ ～ 650 ℃
The content of the filler component is preferably 50 to 80% by volume. Further, by reducing the amount of the expensive crystalline glass, the cost of the sintered body can be reduced.

The mixture of the crystalline glass and the filler component is mixed with an appropriate molding organic resin binder,
Desired forming means, such as doctor blade method, rolling method,
After molding into an arbitrary shape such as a sheet shape by a die pressing method or the like, firing is performed.

In firing, first, the binder component added for molding is removed. The binder is usually removed in an air atmosphere at about 700 ° C. However, when copper is used as the wiring layer, 100 to 7 containing water vapor is used.
This is performed in a nitrogen atmosphere at 00 ° C. At this time, the shrinkage start temperature of the molded body is desirably about 700 to 850 ° C. If the shrinkage start temperature is lower than this, it becomes difficult to remove the binder. It is necessary to control the yield point as described above.

The firing is performed in an oxidizing atmosphere at 850 ° C. to 1300 ° C. or in a non-oxidizing atmosphere when firing is performed simultaneously with the wiring layer, whereby the relative density is increased to 90% or more. If the firing temperature at this time is lower than 850 ° C., densification cannot be achieved, while if it exceeds 1300 ° C., the wiring layer is melted by simultaneous firing with the wiring layer.
When copper is used as the wiring layer, 850 to 10
This is performed in a non-oxidizing atmosphere at 50 ° C.

In order to manufacture a semiconductor device in which the above-mentioned glass ceramic transmitter sintered body is used as an insulating base and a wiring layer made of a metal material containing copper and silver as main components is provided, the above-described method for forming the insulating base is required. Organic binder and plasticizer suitable for the raw material powder comprising the crystalline glass and the filler component as described above,
A solvent is added and mixed to produce a mud, and the mud is formed into a raw sheet by employing a doctor blade method or a calender roll method. Then, a metal paste obtained by adding and mixing an organic binder, a plasticizer, and a solvent to a suitable metal powder as a wiring layer is printed and applied on a raw sheet in a predetermined pattern by a conventionally known screen printing method. Also,
In some cases, the raw sheet is subjected to an appropriate punching process to form a through hole, and the hole is filled with a metal paste. Then, a plurality of these green sheets are laminated, and the laminated green sheets and the metal paste are simultaneously fired to obtain a multi-layer insulating substrate.

Note that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.

[0065]

According to the semiconductor device of the present invention, Li ₂ O is used as an insulating substrate in a mold type semiconductor device.
20 to 80% by volume of a lithium silicate glass having a deformation point of 400 to 800 ° C. and a filler component of at least one of quartz, cristobalite, tridymite, enstatite, and forsterite.
A sintered body obtained by sintering a compact containing 0 to 80% by volume and containing at least one crystal phase of quartz, cristobalite, tridymite, and enstatite and having a relative dielectric constant of 6 or less. Is used, the relative dielectric constant becomes very small with respect to an electrically insulating material such as ceramics, and as a result, a signal in a high-frequency region propagating through a wiring layer deposited on an insulating base may be a problem. A semiconductor device which does not cause any delay and can sufficiently cope with high-speed processing of information can be obtained.

According to the semiconductor device of the present invention, as the insulating substrate, 20 to 80% by volume of lithium silicate glass containing 5 to 30% by weight of Li ₂ O and having a deformation point of 400 to 800 ° C., quartz and cristobalite , Tridymite,
By sintering a compact containing 20 to 80% by volume of a filler component comprising at least one of enstatite and forsterite, at least one crystal layer of quartz, cristobalite, tridymite, and enstatite is formed. A sintered body having a relative dielectric constant of 6 or less can be easily produced with good reproducibility.

Further, according to the semiconductor device of the present invention, the wiring layer led out from the periphery of the mounting portion where the semiconductor element is mounted at the center of the upper surface of the insulating base to the outer peripheral portion is made of a metal mainly composed of copper and silver. Therefore, since the wiring resistance value of the wiring layer is low, there is no delay in the signal in the high frequency region or an increase in the attenuation of the signal, which does not hinder high-speed processing of information.

Further, according to the semiconductor device of the present invention, since a part of the periphery of the wiring layer formed on the insulating base is covered with the auxiliary film containing the ferrite powder, noise is generated from the external electric circuit to the wiring layer. When it enters, the noise is converted to heat energy by the ferrite powder and absorbed,
The noise does not directly enter the semiconductor element via the wiring layer, and the semiconductor element can be operated normally.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a semiconductor device of the present invention.

FIG. 2 is a sectional view showing another example of the embodiment of the semiconductor device of the present invention.

[Explanation of symbols]

 1, 8... Insulating base 1a, 8a... Mounting part 2... External lead terminal 3... Layer 7: Mold resin

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI C03C 4/00 C03C 4/00 10/04 10/04 10/14 10/14 14/00 14/00 C04B 35/495 C04B 35 / 00 J 35/16 35/16 Z

Claims (3)

[Claims] An insulating base having a mounting portion on which a semiconductor element is mounted in a central portion of an upper surface and a wiring layer extending from the periphery of the mounting portion to an outer peripheral portion; and an electrode mounted on the mounting portion of the insulating base, A semiconductor element connected to the wiring layer;
An external lead terminal attached to the wiring layer and connecting a semiconductor element to an external electric circuit, and a semiconductor device comprising a mold resin covering a part of the insulating base, the semiconductor element and the external lead terminal, The insulating substrate is made of Li ₂ O
20 to 80% by volume of a lithium silicate glass having a deformation point of 400 to 800 ° C containing 5 to 30% by weight of quartz,
At least one of quartz, cristobalite, tridymite, and enstatite obtained by sintering a molded body containing at least one of cristobalite, tridymite, enstatite, and forsterite in a proportion of 20 to 80% by volume. A semiconductor device comprising a sintered body containing one type of crystal phase and having a relative dielectric constant of 6 or less, and a part of a periphery of a wiring layer is covered with an auxiliary film containing ferrite powder. 2. The semiconductor device according to claim 1, wherein said wiring layer is made of a metal containing copper and silver as main components. 3. The lithium secondary battery according to claim 1, wherein said auxiliary film contains 20% to 80% by volume of lithium silicate glass having a deformation point of 400 to 800 ° C. containing 5 to 30% by weight of Li ₂ O, quartz, cristobalite,
20 to 80% by volume of a filler component comprising at least one of tridymite, enstatite and forsterite
10 to 50 parts by weight of glass ceramics containing
2. The semiconductor device according to claim 1, comprising 50 to 90 parts by weight of ferrite powder.