JP3466545B2 - High frequency wiring board - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board applied to a package for housing a semiconductor element, a multilayer wiring board, etc., and in particular, it can be co-fired with copper or silver, and is made of GaAs or the like. The present invention relates to a high-frequency wiring board that can be mounted with high reliability on an external circuit board made of an organic resin such as a chip component or a printed board.

[0002]

2. Description of the Related Art Conventionally, as a ceramic multilayer wiring board, one in which a wiring layer made of a refractory metal such as tungsten or molybdenum is formed on the surface or inside of an insulating substrate made of an alumina sintered body is most popular. There is.

Further, in recent years, with the era of advanced information technology, the frequency band to be used is shifting to higher frequencies. In such a high-frequency wiring board that requires transmission of high-frequency signals, in order to transmit high-frequency signals without loss, the resistance of the conductor forming the wiring layer is small, and the dielectric of the insulating substrate in the high-frequency region is high. Low loss is required.

However, conventional tungsten (W),
Refractory metals such as molybdenum (Mo) have large conductor resistance
Signal transmission speed is slow, and high frequency of 1 GHz or more
Since signal propagation in the wave domain is also difficult, W, Mo, etc.
Use low resistance metals such as copper, silver and gold instead of
Is needed. Do not use such low resistance metal
The wiring layer has a low melting point and must be co-fired with alumina.
Recently, glass, or glass because it is impossible
So-called glass, which is made of a composite material of ceramics and ceramics
A wiring board using ceramics as an insulating substrate was developed.
It's getting lost. For example, JP-A-60-240135
Sea urchin, zinc borosilicate glass, Al ₂O₃, Zirconi
A, low resistance gold with filler such as mullite added
Multi-layer wiring board co-fired with metal, and JP-A-5-2989
As in No. 19, mullite and cordierite are crystal phases.
A glass-ceramic material that has been deposited by
It

In addition, when mounting a chip component such as GaAs on a wiring board such as a multilayer wiring board or a package for housing a semiconductor element, or mounting the wiring board on a printed board containing an organic resin such as a mother board, an insulating board is used. The thermal expansion coefficient of the insulating substrate is determined from the viewpoint of preventing the mounting part from peeling or cracking due to the stress caused by the difference in thermal expansion between the chip component and the printed circuit board. It is hoped that it is similar to that of.

[0006] Therefore, the applicant of the present invention previously disclosed in Japanese Patent Laid-Open No. 9-17
As disclosed in No. 904, it has been proposed that the coefficient of thermal expansion of the insulating substrate can be increased by using a crystallizable lithium silicate glass.

[0007]

However, the conventional glass ceramics have a coefficient of thermal expansion of 3 to 5 even if they can be co-fired with a low resistance metal such as copper, silver or gold.
When the chip parts such as GaAs (coefficient of thermal expansion 6 to 7.5 ppm / ° C) are mounted on a printed circuit board (coefficient of thermal expansion 12 to 15 ppm / ° C), the reliability of mounting is low. It was poor in performance and was not satisfactory in practice.

Further, in the method using glass containing an alkali metal as disclosed in JP-A-9-17904, when the glass is exposed to a high temperature and high humidity atmosphere for a long time, the alkali metal reacts with moisture in the atmosphere and the surface In some cases, the silicate crystal phase was precipitated and the surface was altered.

Further, the conventional glass ceramics have not been specifically studied as an insulating substrate for a wiring substrate using a high frequency signal such as a millimeter wave, and most of them have high dielectric loss and have sufficiently high frequency characteristics. Was not.

Therefore, the present invention can be fired at 800 to 1000 ° C. in which gold, silver, and copper can be used as wiring conductors and can be multilayered, and is close to the coefficient of thermal expansion of chip parts such as GaAs and printed circuit boards. It is an object of the present invention to provide a wiring board which uses an insulating substrate made of porcelain that can be controlled to the above thermal expansion coefficient and has a low dielectric constant and a low dielectric loss even in a high frequency region.

[0011]

Means for Solving the Problems As a result of diligent study of the above problems, the present inventor has found that SiO ₂ , Al ₂ O ₃ , MgO, Sr
A composition containing O and CaO in which quartz is compounded in a specific ratio with respect to a glass capable of precipitating a diopside type oxide crystal phase is used.
By firing at a temperature of 0 ° C., it can be controlled to have a low dielectric constant and a coefficient of thermal expansion similar to that of chip parts such as GaAs and printed circuit boards, and low dielectric loss even in a high frequency region of 1 GHz or higher. The present invention has been accomplished by finding that porcelain can be obtained.

That is, the high frequency wiring board of the present invention contains a diopside type oxide crystal phase containing at least Mg, Ca, Si and Al and a quartz crystal phase, and has a thermal expansion from room temperature to 400 ° C. A high frequency porcelain having a coefficient of 5.5 ppm / ° C. or more, a dielectric constant of 7 or less, and a dielectric loss of 30 × 10 ⁻⁴ or less at 60 to 77 GHz is used as an insulating substrate, and a strip line, a micro line are formed on the surface and inside of the insulating substrate. A wiring layer composed of at least one of a strip line, a coplanar line, and a dielectric waveguide line ,
GaAs chip parts are mounted on the surface of the insulating substrate.
And the thermal expansion difference between the insulating substrate and GaAs is 2
It is characterized in that it is below ppm / ° C.

Here, from the room temperature of the high frequency porcelain to 40
The coefficient of thermal expansion at 0 ° C is preferably 8.5 ppm / ° C or more.

Further, the high frequency porcelain is made of SiO ₂ ,
Glasses 50 to 9 containing Al ₂ O ₃ , MgO, SrO and CaO and capable of precipitating a diopside type oxide crystal phase
5% by weight, quartz and / or amorphous silicon
After molding a high frequency porcelain composition containing 5 to 50% by weight of the total amount of mosquitoes, the composition is fired at a temperature of 800 to 1000 ° C., and the glass has SiO _{2 of} 45 to 55% by weight, Al ₂ O _{3 3 to} 10 wt% and MgO 13 to 24
Wt%, SrO 10-24 wt%, CaO 8-20
It is desirable to be composed by weight%.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION A high frequency porcelain composition for producing an insulating substrate for a high frequency wiring board of the present invention is made of Si.
Including O ₂ , Al ₂ O ₃ , MgO, SrO and CaO,
Glass 50 capable of depositing diopside type oxide crystal phase
˜95% by weight and 5 to 50% by weight of quartz.

The reason why the composition of each component is limited to the above range is that
If the amount of the glass is less than 50% by weight, it is difficult to densify the porcelain by firing at a temperature of 1000 ° C. or less, and if the amount of the glass is more than 95% by weight, crystallization of the glass becomes insufficient and dielectric loss occurs. This is because the large glass phase of P remains and the dielectric loss of the porcelain at high frequencies increases. A particularly desirable range for glass is 60-85% by weight.

When the total amount of quartz is less than 5% by weight, the residual rate of glass becomes high and the dielectric loss becomes large. On the other hand, if it exceeds 50% by weight, it becomes difficult to sinter and 1
It cannot be densified at a firing temperature of 000 ° C. or less.
The preferred range of quartz is 15-40% by weight.

The glass capable of precipitating the diopside type oxide crystal phase has a softening point of 500 to 8
It is desirable that the temperature is 00 ° C., and the composition is SiO ₂ 45.
55 wt%, Al ₂ O ₃ 3~10 wt%, MgO13~
24 wt%, SrO10-24 wt%, CaO8-20
It is desirable that the ratio is wt%.

In order to increase the precipitation rate of the diopside type oxide crystal phase from the above glass, it is desirable that the total amount of CaO and MgO in the glass is 35 to 44% by weight.

In order to manufacture a porcelain using the above high frequency porcelain composition, a crystallized glass containing SiO ₂ , Al ₂ O ₃ , MgO, SrO and CaO and capable of precipitating a diopside type oxide crystal phase is used. After using a mixed powder of the above composition consisting of, quartz, and / or amorphous silica to prepare a molded product having a predetermined shape by a known molding method such as a doctor blade method, a calendar roll method, a rolling method, or a press molding method, It can be produced by firing the molded body in an oxidizing atmosphere or a non-oxidizing atmosphere at 800 to 1000 ° C.

According to the present invention, by using the above-mentioned glass composition, the temperature is 1000 ° C. or lower, particularly 950 ° C. or lower, and further 930 even though it contains a high melting point substance such as SiO ₂ as a filler. Since it can be fired at a temperature of not higher than 0 ° C., it can be fired at the same time with copper and / or silver that is often used as the wiring layer of the high-frequency wiring board of the present invention, as will be described later.

Here, in the case of adding quartz, it may undergo phase transformation into cristobalite, tridymite, etc. in addition to quartz by firing.
Since it has a bending point of the thermal expansion coefficient near 00 ° C., it is desirable that it remains as quartz in terms of thermal expansion behavior and dielectric properties.

The porcelain composition of the above embodiment is 800 to 10
By calcination in the temperature range of 00 ° C., the relative density can be densified to 97% or more, and the overall composition of the porcelain thus formed is an oxide of each metal element of Si, Al, Mg, Sr and Ca. When the total amount calculated is 100 wt%, SiO ₂ is 55 to 75 wt%, Al ₂ O ₃ is ₃ to 5 wt%, MgO is 10 to 14 wt%, and SrO is 1 wt.
It is desirable to be composed of 5 to 23% by weight and 14 to 19% by weight of CaO.

Generally, the thermal expansion coefficient of the glass phase containing Al ₂ O ₃ or SiO ₂ is as low as 4 to 5 ppm / ° C. On the other hand, the diopside type oxide crystal phase of Ca (Mg, Al) (Si, Al) ₂ O ₆ has a high thermal expansion property of about 8 to 9 ppm / ° C., so that it is more preferable than the glass having the above composition. High thermal expansion can be achieved by precipitating the p-side oxide crystal phase. The diopside type oxide crystal phase is a material having a dielectric constant of 6 to 8 and a small dielectric loss in a high frequency band.

According to the above porcelain composition, glass, quartz and amorphous silica (coefficient of thermal expansion of 2 to 5 ppm)
/ ° C.) amount, the thermal expansion coefficient, the dielectric constant, etc. can be arbitrarily adjusted.

For example, by allowing the quartz crystal phase or the quartz crystal phase and the amorphous silica phase to exist in the above-mentioned high frequency porcelain, the thermal expansion coefficient from room temperature to 400 ° C. is 5.5 ppm / ° C. or more and the dielectric constant is 7 or less. ,
The dielectric loss at 60 to 77 GHz can be controlled to a characteristic of 30 × 10 ⁻⁴ or less.

According to the present invention, by adding quartz as a filler to the glass having the above composition, a diopside type oxide crystal phase is precipitated in a porcelain and a high thermal expansion of 13 to 20 ppm / ° C. By including the quartz crystal phase having a coefficient, the thermal expansion coefficient of the porcelain can be increased to 8.5 ppm / ° C or higher. As a result, the difference in thermal expansion coefficient between the porcelain and the external circuit board made of an organic resin such as a chip component such as GaAs and a printed circuit board can be reduced. Therefore, when the porcelain of the present invention is used as an insulating substrate for a wiring board, the reliability of mounting is improved. You can improve your sex.

Since the permittivity of quartz is 4 to 4.5, the permittivity of porcelain can be set to 7 or less,
Quartz is a material that has a small dielectric loss in the millimeter wave band, while the influence on the high frequency signal of the substrate can be reduced. Therefore, the dielectric loss of porcelain at 60 to 77 GHz is 30 × 1.
Since it can be set to 0 ^-4 or less, the signal transmission characteristics in the high frequency band, particularly in the millimeter wave band are improved.

Further, the porcelain manufactured as described above, as shown in the schematic diagram of the porcelain structure in FIG. 1, is a diop containing at least Mg, Ca, Si and Al precipitated from glass as a crystal phase. Side-type oxide crystal phase Ca (M
g, Al) (Si, Al) ₂ O ₆ (DI), as well as SiO
_It contains _two phases (Si, AM), and in addition to that, Ca ₂ MgSi ₂ O ₇ (akermanite),
CaMgSiO ₄ (monticellite), Ca ₃
Similar phases with high thermal expansion such as MgSi ₂ O ₈ (merwinite) may be precipitated.

Further, according to the present invention, amorphous silica is mainly added as a filler to the glass having the above composition to precipitate a diopside type oxide crystal phase in porcelain and to make its grain boundaries amorphous. Since the amorphous silica has a low dielectric constant of 3.8 to 4.2 because it is mainly formed of a silica phase,
The permittivity of the porcelain can be set to 5.9 or less, and when it is used for a high-frequency wiring board or the like, the influence of the board on the transmission characteristics of high-frequency signals can be reduced. Furthermore, since amorphous silica is a material having a small dielectric loss in the millimeter wave band, the dielectric loss of the porcelain at 60 to 77 GHz can be set to 30 × 10 ⁻⁴ or less.

Since the above-mentioned porcelain composition has a low dielectric loss in a high frequency band, it is suitable for forming an insulating layer of a high frequency wiring board of 1 GHz or more, particularly 20 GHz or more, further 50 GHz or more, and further 70 GHz or more. Is.
When the above-mentioned porcelain is used as an insulating substrate of a wiring board, the dielectric constant is 7 in order to reduce the influence on the transmission characteristics of high frequency signals.
It is desirable that it is as low as possible, particularly 5.9 or less.

In that case, as described above, the thermal expansion coefficient of the insulating substrate from room temperature to 400 ° C. is approximated to the thermal expansion coefficient of the mounted chip component or printed circuit board.
It is desirable to control and appropriately adjust the composition and structure of the porcelain constituting the substrate.

This is because when there is a difference in the coefficient of thermal expansion of the above-mentioned insulating substrate from that of the chip component or the printed circuit board mounted, the chip component or the like is repeatedly mounted by soldering or by repeated temperature cycles due to the operation stop of the semiconductor element. This is because stress due to the difference in thermal expansion is generated in the mounting portion between the printed circuit board and the package, cracks or the like are generated in the mounting portion, and the reliability of the mounting structure is impaired.

Specifically, the difference in the coefficient of thermal expansion from the GaAs-based chip component is 2 ppm / ° C. or less in order to achieve the matching with the GaAs-based chip component. Then, it is desirable that the difference in thermal expansion coefficient from the printed circuit board is 2 ppm / ° C. or less.

A method of manufacturing the high-frequency wiring board of the present invention having a wiring layer using the above high-frequency porcelain will be specifically described. A slurry is prepared by mixing an appropriate organic solvent and a solvent into the mixed powder composed of the above-mentioned composition, and by using a conventionally known doctor blade method, calender roll method, rolling method, or press molding method, a sheet form is formed. To mold. Then, after forming a through hole in the sheet-shaped molded product as desired, in the through hole,
A metal paste containing at least one of copper, gold and silver is filled. Then, on the surface of the sheet-shaped molded body, the metal paste is used for a high-frequency line pattern formed of at least one of a strip line, a microstrip line, a coplanar line, and a dielectric waveguide line capable of transmitting a high-frequency signal. Screen printing, gravure printing, etc. are applied by printing so that the wiring layer has a thickness of 5 to 30 μm.

After that, a plurality of sheet-shaped compacts are aligned, laminated and pressure-bonded, and fired in a non-oxidizing atmosphere such as nitrogen gas or nitrogen-oxygen mixed gas at 800 to 1000 ° C. to obtain the wiring board of the present invention. Can be produced. Then, a chip component such as a semiconductor element is appropriately mounted on the surface of the wiring board and connected to the wiring layer so that signals can be transmitted.

As a connection method, the wiring layer may be directly mounted on the wiring layer for connection, or a resin of about 50 μm, Ag, or the like may be used.
-A chip component is fixed to the surface of the insulating substrate with an adhesive such as a resin such as epoxy, Ag-glass, Au-Si, metal, or ceramics, and the wiring layer and the semiconductor element are connected with each other by wire bonding or TAB tape.

As the semiconductor element, Si-based or GaAs-based chip parts can be used, but it is most effective for mounting GaAs-based chip parts in terms of the approximation of the coefficient of thermal expansion.

Further, on the surface of the wiring substrate on which the semiconductor element is mounted, a cap made of an insulating material similar to that of the insulating substrate, another insulating material, a metal having a good heat dissipation property, or the like and having an electromagnetic wave shielding property is made of glass, They may be joined by an adhesive such as a resin or a brazing material, whereby the semiconductor element can be hermetically sealed.

A specific structure of a package for housing a semiconductor element, which is an example of the high-frequency wiring board of the present invention, and its mounting structure will be described with reference to FIG. FIG. 2 is a schematic cross-sectional view of a semiconductor housing package, in particular, a ball grid array (BGA) type package in which connection terminals are ball-shaped terminals.

As shown in FIG. 2, the package A has a cavity 3 formed by an insulating substrate 1 made of an insulating material and a lid body 2. In the cavity 3, a chip component 4 such as a GaAs system is formed as described above. Mounted with adhesive.

On the surface and inside of the insulating substrate 1,
A wiring layer 5 electrically connected to the chip component 4 is formed. The wiring layer 5 is preferably made of a low resistance metal such as copper, silver or gold in order to reduce conductor loss as much as possible when transmitting a high frequency signal. Further, according to the present invention, when transmitting a high frequency signal of 1 GHz or more to the wiring layer 5, it is necessary to transmit the high frequency signal without loss. Therefore, the wiring layer 5 is a strip line or a microstrip line. It is important to be composed of at least one of a coplanar line and a dielectric waveguide line.

In the package A of FIG. 2, a connection electrode layer 6 is deposited on the bottom surface of the insulating substrate 1 and connected to the wiring layer 5 in the package A. The ball-shaped terminals 8 are formed on the connecting electrode layer 6 by a brazing material 7 such as solder.

In order to mount the package A on the external circuit board, wiring is performed on the surface of the insulating substrate 9 made of an insulating material containing an organic resin such as polyimide resin, epoxy resin or phenol resin, as shown in FIG. The external circuit board B on which the conductor 10 is formed is mounted via a brazing material. Specifically, the ball-shaped terminal 8 attached to the bottom surface of the insulating substrate 1 in the package A and the wiring conductor 10 of the external circuit board B are brought into contact with each other and the brazing material 11 such as solder such as Pb-Sn is used. It is mounted by brazing. Also,
The ball-shaped terminal 8 itself may be melted and connected to the wiring conductor 10.

According to the present invention, the chip component 4 made of GaAs or the like is mounted on the external circuit board B such as a printed circuit board by brazing or mounting with an adhesive, or by brazing with such a ball-shaped terminal 8 interposed. In such a surface mount type package, the difference in thermal expansion between the chip component 4 such as GaAs and the insulating substrate 1 of the external circuit board B can be made smaller than that of the conventional ceramic material. Even when the voltage is applied, it is possible to suppress the generation of stress in the mounting portion, so that the long-term reliability of the mounting structure can be improved.

[0046]

Example A crystallized glass capable of precipitating two diopside type oxide crystal phases having the following compositions was prepared.

Glass A: SiO ₂ 50.2 wt% -Al ₂ O ₃ 5.0 wt% -MgO 16.1 wt% -SrO 13.6 wt% -CaO 15.1 wt% Glass B: SiO ₂ 47.5 wt% % -Al ₂ O ₃ 4.9% by weight-MgO 16.1% by weight-SrO 20% by weight-CaO 11.5% by weight And, with respect to this crystallized glass powder, the average particle size is 5
Quartz of μm or amorphous silica powder having an average particle size of 2 μm was used and mixed so as to have the compositions shown in Tables 1 and 2. Then, an organic binder, a plasticizer, and toluene are added to this mixture to prepare a slurry, and the slurry is used to obtain a thickness of 300 μm by a doctor blade method.
m green sheet was produced. Then, 10 to 15 of these green sheets are laminated and 100 k at a temperature of 50 ° C.
A pressure of g / cm ² was applied for thermocompression bonding. The obtained laminated body was subjected to binder removal treatment at 700 ° C. in a water vapor-containing / nitrogen atmosphere and then fired in dry nitrogen under the conditions shown in Tables 1 and 2 to obtain a porcelain for an insulating substrate.

The dielectric constant and the dielectric loss of the obtained porcelain were evaluated by the following methods. Measurement is shape, diameter 2-7mm,
Cut out into a shape with a thickness of 1.5 to 2.5 mm, 60 GHz
The method was performed by the dielectric cylinder resonator method using a network analyzer and a synthesized sweeper. In the measurement, the NRD guide (non-radiative dielectric line) was used to excite the dielectric resonator, and the dielectric constant and dielectric loss were calculated from the resonance characteristics of the TE ₀₂₁ and TE ₀₃₁ modes.

Further, a thermal expansion curve from room temperature to 400 ° C. was taken and the thermal expansion coefficient was calculated. Further, the main crystal phase in the sintered body was identified from the X-ray diffraction chart.
The results are shown in Tables 1 and 2.

For some samples, ZrO ₂ powder and CaZrO ₃ powder were used in place of quartz and / or amorphous silica as the filler component, and porcelain was prepared and evaluated in the same manner (Sample Nos. 19 to 21). 35-
37). Further, a glass C having the following composition was used instead of the crystallized glasses A and B, and the same evaluation was performed (Samples No. 38 and 39).

Glass C: SiO ₂ 10.4 wt% -Al ₂
O ₃ 2.5 wt% -B ₂ O ₃ 45.3 wt% -CaO35.2 wt% -Na ₂ O6.6 wt%

[0052]

[Table 1]

[0053]

[Table 2]

As is clear from the results of Tables 1 and 2, Si
Sample No. in which the amount of glass containing O ₂ , Al ₂ O ₃ , MgO, SrO, and CaO exceeds 95% by weight. In Nos. 1 and 22, the dielectric loss exceeded 30 × 10 ⁻⁴ and the glass amount was 50.
Sample No. less than wt% 10, 14, 18, 34
Then, it was difficult to sinter at low temperature, and it was not densified. Sample No. Nos. 19 to 21 and 35 to 37 are those in which ZrO ₂ or CaZrO ₃ was added as an additive component to glass, but ZrO ₂ or CaZrO ₃ was precipitated in the sintered body and dielectric loss increased. Further, as glass, B ₂ O ₃
Sample No. using glass C containing a large amount of No. 38 melts, and sample No. In No. 39, a large amount of glass containing B remained, and the dielectric loss tended to increase.

On the other hand, according to the present invention, the sample No. containing mainly the specified amount of quartz powder was added. 2-9, 1
In 5, 17, 23 to 28, 32, 33, precipitation of a quartz phase was observed in the porcelain, and in all cases, the coefficient of thermal expansion was 8.5 ppm / ° C. or higher at a measurement frequency of 60 GHz,
It had excellent properties such as a dielectric constant of 7 or less and a dielectric loss of 30 × 10 ⁻⁴ or less.

Further, according to the present invention, the sample No. containing mainly a specific amount of amorphous silica powder was added. 11-1
In Nos. 3, 16, and 29 to 31, an amorphous silica phase was present in the porcelain and all had thermal expansion coefficients of 5.5 pp.
Dielectric constant of 5. at m / ° C or higher and a measurement frequency of 60 GHz.
It had excellent characteristics of 9 or less and a dielectric loss of 20 × 10 ⁻⁴ or less.

[0057]

As described in detail above, since the insulating substrate of the high-frequency wiring board of the present invention can be fired at a low temperature of 1000 ° C. or less, a wiring layer made of a low resistance metal such as copper can be formed, and 1 GHz or more. Since it has a low dielectric constant and a low dielectric loss in the high frequency region, it is possible to transmit a high frequency signal very satisfactorily without loss.

Moreover, since this insulating substrate can be controlled to have a thermal expansion characteristic similar to that of a GaAs chip or a printed circuit board, when a GaAs chip is mounted or a mother board such as a printed circuit board having an insulating substrate containing an organic resin is used. It is possible to provide a highly reliable mounting structure having excellent thermal cycle resistance when mounted with a brazing material or the like.

[Brief description of drawings]

FIG. 1 is a schematic diagram for explaining the structure of an insulating substrate of a wiring board of the present invention.

FIG. 2 is a schematic cross-sectional view for explaining an example of a mounting structure of a package for housing a semiconductor element, which is an example of a high-frequency wiring board of the present invention.

[Explanation of symbols]

DI Diopside type oxide crystal phase Si SiO ₂ crystal phase AM amorphous silica phase G amorphous (glass) phase A semiconductor element storage package (high-frequency wiring board) B external circuit board 1 insulating board 2 lid 3 cavity 4 Chip Component 5 Wiring Layer 6 Connection Electrode Layer 7 Brazing Material 8 Ball Terminal 9 Insulating Substrate 10 Wiring Conductor 11 Brazing Material

Claims (4)

(57) [Claims] 1. A diopside type oxide crystal phase containing at least Mg, Ca, Si and Al, and a quartz crystal phase, and having a thermal expansion coefficient of 5.5 ppm / ° C. or more from room temperature to 400 ° C. Dielectric constant of 7 or less, 60-77G
A high frequency porcelain having a dielectric loss at 30 Hz or less of 30 × 10 ⁻⁴ is used as an insulating substrate, and a strip line, a microstrip line, a coplanar line, and
A wiring layer composed of at least one of the dielectric waveguide lines is provided , and a GaAs-based chip is formed on the surface of the insulating substrate.
Is mounted, and the GaA of the insulating substrate is mounted.
A high-frequency wiring board having a difference in thermal expansion with s of 2 ppm / ° C. or less . 2. The high frequency wiring board according to claim 1, wherein the high frequency porcelain has a thermal expansion coefficient of 8.5 ppm / ° C. or more from room temperature to 400 ° C. 3. The high frequency porcelain is SiO ₂ , Al ₂ O
Glass containing ₃ , MgO, SrO and CaO and capable of precipitating a diopside type oxide crystal phase 50 to 95% by weight
And the total amount of quartz and / or amorphous silica
3. The high frequency wiring board according to claim 1 or 2, wherein the high frequency ceramic composition containing 5 to 50% by weight is molded and then fired at a temperature of 800 to 1000C. . 4. The glass contains 45 to 55% by weight of SiO _2.
4. The high-frequency wiring board according to claim 3, comprising: Al ₂ O ₃ 3 to 10 wt%, MgO 13 to 24 wt%, SrO 10 to 24 wt%, and CaO 8 to 20 wt%. .