JP2001068597A - High-frequency wiring board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a high-frequency wiring board, that has a low dielectric constant and low dielectric loss at a high-frequency region and has a thermal coefficient of expansion close to that of such chip components and printed-wiring board as a GaAs and can be surely mounted to them. SOLUTION: Glass (50-95 wt.%) for depositing diopside-type oxide crystal phase (DI) containing SiO2, Al2O3, MgO, SrO, and CaO, and quartz (5-50 wt.%) are formed and are baked at 800-1,000 deg.C as the dioposide-type oxide crystal phase (DI), porcelain that contains SiO2 crystal phase (Si) and has a thermal coefficient of expansion of 5.5 ppm/ deg.C or higher from room temperature to 400 deg.C, a permittivity of 7 or smaller, and a dielectric loss of 30×10-4 or less at 60-77 GHz is set to an insulation substrate 1, and a wiring substrate A for high frequency with a wiring layer 5 which composed by one type out of a strip line, a microstrip line, a coplanar line, and dielectric waveguide line is made.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board applied to a package for storing semiconductor elements, a multilayer wiring board, and the like, and more particularly to a wiring board which can be co-fired with copper or silver. The present invention relates to a high-frequency wiring board that can be mounted with high reliability on an external circuit board made of an organic resin such as a chip component or a printed board.

[0002]

2. Description of the Related Art Conventionally, as a ceramic multilayer wiring board, a ceramic multilayer wiring board in which a wiring layer made of a refractory metal such as tungsten or molybdenum is formed on the surface or inside of an insulating substrate made of an alumina-based sintered body has been most widely used. I have.

Further, recently, with the era of advanced information, the frequency band to be used is shifting to higher and higher frequencies. In such a high-frequency wiring board that requires transmission of a high-frequency signal, in order to transmit a high-frequency signal without loss, the resistance of the conductor forming the wiring layer is small, and the dielectric of the insulating substrate in the high-frequency region is low. Low loss is required.

However, conventional tungsten (W),
Refractory metals such as molybdenum (Mo) have high conductor resistance
Signal propagation speed is slow, and high frequency
Since it is difficult to propagate signals in the wave region, W, Mo, etc.
Use low-resistance metals such as copper, silver, and gold instead of metals
It is necessary. Because of such low resistance metal
The wiring layer has a low melting point and should be co-fired with alumina.
Is impossible, because recently, glass, or glass
So-called glass made of composite material of ceramic and ceramic
Wiring board using ceramics as insulating substrate was developed.
It is getting. For example, JP-A-60-240135
In the case of zinc borosilicate glass, _TwoO_Three, Zirconi
A, low-resistance gold with fillers such as mullite
Multilayer wiring board co-fired with metal
As in No. 19, mullite and cordierite are used as crystalline phases.
Glass ceramic materials deposited by
You.

Further, when mounting chip parts such as GaAs on a wiring board such as a multilayer wiring board or a package for housing semiconductor elements, or mounting a wiring board on a printed board containing an organic resin such as a motherboard, an insulating board is required. In order to prevent the mounting part from peeling or cracking due to the stress generated due to the thermal expansion difference between the chip part and the printed circuit board, the thermal expansion coefficient of the It is desired to be close to that of

Therefore, the present applicant has previously disclosed in Japanese Patent Laid-Open No. 9-17 / 1997.
As disclosed in Japanese Patent No. 904, it has been proposed that the use of crystallizable lithium silicate glass can increase the thermal expansion coefficient of an insulating substrate.

[0007]

However, the conventional glass ceramic has a thermal expansion coefficient of 3 to 5 even if it can be co-fired with a low-resistance metal such as copper, silver or gold.
ppm / ° C, which is as low as about 1 ppm / ° C, the reliability of mounting when mounting chip parts such as GaAs (coefficient of thermal expansion: 6 to 7.5 ppm / ° C) or printed circuit boards (coefficient of thermal expansion: 12 to 15 ppm / ° C) The properties were low and were not practically satisfactory.

In the method using a glass containing an alkali metal as disclosed in Japanese Patent Application Laid-Open No. Hei 9-17904, when exposed to a high-temperature and high-humidity atmosphere for a long time, the alkali metal reacts with the moisture in the atmosphere to produce a surface. In some cases, a silicate crystal phase is precipitated and the surface is deteriorated.

Conventional glass ceramics have not been specifically studied as insulating substrates for wiring boards using high-frequency signals such as millimeter waves, and most of them have high dielectric loss and have satisfactory high-frequency characteristics. Was not.

Therefore, the present invention can be fired at 800 to 1000 ° C., which can be multilayered using gold, silver and copper as wiring conductors, and has a thermal expansion coefficient close to that of chip parts such as GaAs or a printed circuit board. It is an object of the present invention to provide a wiring board which can control the thermal expansion coefficient to a low value and has a low dielectric constant and a low dielectric loss even in a high-frequency region, using a porcelain as an insulating substrate.

[0011]

Means for Solving the Problems As a result of diligent study of the above-mentioned problems, the present inventors have found that SiO ₂ , Al ₂ O ₃ , MgO, Sr
For a glass containing O and CaO and capable of precipitating a diopside oxide crystal phase, a composition in which quartz is blended at a specific ratio is used.
By firing at a temperature of 0 ° C., the dielectric constant can be controlled to a low dielectric constant and a thermal expansion coefficient similar to that of a chip component such as GaAs or a printed circuit board, and a low dielectric loss even in a high frequency region of 1 GHz or more. The inventors have found that porcelain can be obtained, and have reached the present invention.

That is, the high-frequency wiring board of the present invention contains a diopside oxide crystal phase containing at least Mg, Ca, Si, and Al, and a quartz crystal phase, and has a thermal expansion from room temperature to 400 ° C. A high-frequency ceramic having a coefficient of 5.5 ppm / ° C. or more, a dielectric constant of 7 or less, and a dielectric loss at 60 to 77 GHz of 30 × 10 ⁻⁴ or less as an insulating substrate; Inside, stripline, microstrip line, coplanar line,
It is characterized by including a wiring layer composed of at least one of the dielectric waveguide lines.

Here, it is desirable to mount a GaAs-based chip component on the surface of the insulating substrate, and that the high-frequency ceramic has a coefficient of thermal expansion from room temperature to 400 ° C. of 8.
It is desirable that the concentration be 5 ppm / ° C. or more.

Further, the high frequency porcelain is made of SiO ₂ ,
Al ₂ O _3, MgO, include SrO and CaO, diopside-type oxide crystal phase can deposit glass 50-95
And weight%, after forming a high-frequency ceramic composition in a proportion of quartz 5-50% by weight, obtained by sintering at a temperature of 800 to 1000 ° C., the glass, SiO _2. 45 to
55% by weight, _{3 to} 10% by weight of Al ₂ O ₃ and MgO 13
-24% by weight, SrO 10-24% by weight, CaO 8
-20% by weight.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A high frequency porcelain composition for producing an insulating substrate of a high frequency wiring board according to the present invention is made of Si.
O ₂ , Al ₂ O ₃ , MgO, SrO and CaO,
Glass 50 capable of precipitating a diopside oxide crystal phase
To 95% by weight and 5 to 50% by weight of quartz.

The reason for limiting each component composition to the above range is as follows.
If the content of the glass is less than 50% by weight, it is difficult to densify the porcelain by firing at a temperature of 1000 ° C. or less, and if the content is more than 95% by weight, the crystallization of the glass becomes insufficient, and the dielectric loss becomes large. This is because a large glass phase remains and the dielectric loss of the porcelain at high frequencies increases. A particularly desirable range for the glass is 60-85% by weight.

If the total amount of quartz is less than 5% by weight, the residual ratio of the glass increases and the dielectric loss increases. Conversely, if it exceeds 50% by weight, sintering becomes difficult, and
It cannot be densified at a firing temperature of 000 ° C. or lower.
A desirable range of quartz is 15 to 40% by weight.

Here, the glass capable of precipitating the diopside-type oxide crystal phase has a glass softening point of 500-8.
00 ° C., and the composition is SiO ₂ 45
55 wt%, Al ₂ O ₃ 3~10 wt%, MgO13~
24% by weight, 10 to 24% by weight of SrO, 8 to 20 of CaO
Desirably, it is in a percentage by weight.

In order to increase the precipitation ratio of the diopside oxide crystal phase from the above glass, it is desirable that the total amount of CaO and MgO in the glass is 35 to 44% by weight.

In order to manufacture a porcelain using the above-described high frequency porcelain composition, a crystallized glass containing SiO ₂ , Al ₂ O ₃ , MgO, SrO and CaO and capable of precipitating a diopside oxide crystal phase is used. Using a mixed powder of the above composition comprising quartz and / or amorphous silica, a doctor blade method or a calender roll method, or a rolling method, after forming a molded body of a predetermined shape by a known molding method such as a press molding method, It can be produced by firing the molded body in an oxidizing atmosphere or a non-oxidizing atmosphere at 800 to 1000 ° C.

According to the present invention, the use of the above glass composition makes it possible to use a glass material having a high melting point such as SiO ₂ as a filler, at a temperature of 1000 ° C. or less, particularly 950 ° C. or less, and even 930 ° C. Since firing at a temperature of not more than ° C. is possible, simultaneous firing with copper and / or silver, which is frequently used as a wiring layer of the high-frequency wiring board of the present invention, is possible as described later.

When quartz is added, it may be transformed into cristobalite, tridymite or the like by sintering in addition to quartz.
Since it has a bending point of the thermal expansion coefficient near 00 ° C., it is desirable that the thermal expansion coefficient and the dielectric properties remain as quartz.

The porcelain composition of the above embodiment has a composition of 800 to 10
The porcelain can be densified to a relative density of 97% or more by baking in a temperature range of 00 ° C., and the resulting porcelain has an overall composition of oxides of metal elements of Si, Al, Mg, Sr and Ca when the total amount was 100 wt% by translation, the SiO ₂ 55 to 75 wt%, the Al ₂ O ₃ 3 to 5 wt%, the MgO 10 to 14 wt%, the SrO 1
It is desirable that the composition be 5 to 23% by weight and 14 to 19% by weight of CaO.

Generally, the glass phase containing Al ₂ O ₃ or SiO ₂ has a low thermal expansion coefficient of 4 to 5 ppm / ° C. On the other hand, the diopside oxide crystal phase of Ca (Mg, Al) (Si, Al) ₂ O ₆ has a high thermal expansion characteristic of about 8 to 9 ppm / ° C. High thermal expansion can be achieved by precipitating a pside oxide crystal phase. The diopside oxide crystal phase is a material having a dielectric constant of 6 to 8 and having a small dielectric loss in a high frequency band.

According to the above porcelain composition, glass, quartz and amorphous silica (coefficient of thermal expansion 2 to 5 ppm)
/ ° C), the coefficient of thermal expansion, the dielectric constant, and the like can be arbitrarily adjusted.

For example, the presence of a quartz crystal phase or a quartz crystal phase and an amorphous silica phase in the above-mentioned high frequency porcelain allows a thermal expansion coefficient from room temperature to 400 ° C. of 5.5 ppm / ° C. or more and a dielectric constant of 7 or less. ,
The dielectric loss at 60 to 77 GHz can be controlled to a characteristic of 30 × 10 ⁻⁴ or less.

According to the present invention, by adding quartz as a filler to the glass having the above composition, a diopside oxide crystal phase is precipitated in the porcelain and a high thermal expansion of 13 to 20 ppm / ° C. By including a quartz crystal phase having a coefficient, the thermal expansion coefficient of the porcelain can be increased to 8.5 ppm / ° C. or more. As a result, the difference in the coefficient of thermal expansion between the porcelain and an external circuit board made of an organic resin such as a chip component such as GaAs and a printed board can be reduced. Therefore, when the porcelain of the present invention is used as an insulating substrate of a wiring board, the reliability of mounting is reduced. Can be enhanced.

Further, since the dielectric constant of quartz is 4 to 4.5, the dielectric constant of porcelain can be reduced to 7 or less.
Since the influence of the substrate on the high-frequency signal can be reduced and quartz is a material having a small dielectric loss in the millimeter wave band, the dielectric loss of porcelain at 60 to 77 GHz is reduced by 30 × 1.
Since it can be 0 ^-4 or less, signal transmission characteristics in a high frequency band, particularly in a millimeter wave band, are improved.

Further, as shown in the schematic diagram of the porcelain structure of FIG. 1, the porcelain produced as described above has a dioptric phase containing at least Mg, Ca, Si and Al precipitated from glass as a crystal phase. Side-type oxide crystal phase Ca (M
g, Al) (Si, Al) ₂ O ₆ (DI)
_It contains _two system phases (Si, AM), and also contains Ca ₂ MgSi ₂ O ₇ (akermanite),
CaMgSiO ₄ (Monticellite), Ca ₃
Similar phases with high thermal expansion, such as MgSi ₂ O ₈ (merwinite), may precipitate.

Further, according to the present invention, by adding amorphous silica as a filler to a glass having the above composition, a diopside-type oxide crystal phase is precipitated in porcelain, and the grain boundary is reduced to an amorphous phase. Since the dielectric constant of amorphous silica is as low as 3.8 to 4.2 by being mainly formed by the silica phase,
The dielectric constant of the porcelain can be 5.9 or less, and when used for a high-frequency wiring board or the like, the influence of the board on transmission characteristics of high-frequency signals can be reduced. Furthermore, since amorphous silica is a material having a small dielectric loss in a millimeter wave band, the dielectric loss of porcelain at 60 to 77 GHz can be reduced to 30 × 10 ⁻⁴ or less.

The above-mentioned porcelain composition is suitable for forming an insulating layer of a high-frequency wiring board of 1 GHz or more, particularly 20 GHz or more, further 50 GHz or more, or even 70 GHz or more because of its low dielectric loss in a high frequency band. It is.
When the above porcelain is used as an insulating substrate of a wiring board, the dielectric constant is 7 to reduce the influence on the transmission characteristics of high-frequency signals.
Hereafter, it is particularly desirable to be as low as 5.9 or less.

In this case, as described above, the coefficient of thermal expansion of the insulating substrate from room temperature to 400 ° C. is similar to the coefficient of thermal expansion of a mounted chip component or a printed circuit board as described above.
It is desirable that the composition and structure of the porcelain constituting the substrate be controlled and appropriately adjusted.

If the thermal expansion coefficient of the insulating substrate is different from that of a mounted chip component or a printed circuit board, the temperature of the chip component or the like may be increased by repeated temperature cycles during solder mounting or by stopping operation of the semiconductor element. This is because a stress due to a difference in thermal expansion is generated in a mounting portion between the printed circuit board and the package, and a crack or the like is generated in the mounting portion, thereby impairing the reliability of the mounting structure.

More specifically, the difference in the coefficient of thermal expansion between the GaAs-based chip component and the GaAs-based chip component is 2 ppm / ° C. or less. In this case, it is desirable that the difference in the coefficient of thermal expansion from the printed board is 2 ppm / ° C. or less.

Specifically, a method of manufacturing the high-frequency wiring board of the present invention having a wiring layer using the above-described high-frequency ceramic will be described. A slurry is prepared by mixing a mixed powder of the above-described composition with an appropriate organic solvent and a solvent, and the slurry is formed into a sheet by a conventionally known doctor blade method, calender roll method, or rolling method, press molding method. Mold into Then, after forming a through hole as desired in the sheet-like molded body, in the through hole,
A metal paste containing at least one of copper, gold, and silver is filled. Then, on the surface of the sheet-shaped molded body, the metal paste is used for a high-frequency line pattern including at least one of a strip line, a microstrip line, a coplanar line, and a dielectric waveguide line capable of transmitting a high-frequency signal. Print coating is performed by screen printing, gravure printing, or the like so that the thickness of the wiring layer is 5 to 30 μm.

Thereafter, a plurality of sheet-like molded bodies are aligned and laminated and pressed, and then fired in a non-oxidizing atmosphere such as a nitrogen gas or a nitrogen-oxygen mixed gas at 800 to 1000 ° C. to obtain the wiring substrate of the present invention. Can be produced. Then, a chip component such as a semiconductor element is appropriately mounted on the surface of the wiring board, and connected to the wiring layer so that signals can be transmitted.

As a connection method, a connection is made by directly mounting on the wiring layer, or a resin of about 50 μm or Ag is used.
-The chip component is fixed to the surface of the insulating substrate with an adhesive such as a resin such as epoxy, Ag-glass, or Au-Si, a metal, or a ceramic, and the wiring layer and the semiconductor element are connected by wire bonding or TAB tape.

As the semiconductor element, a chip component such as a Si-based or GaAs-based chip can be used, but it is most effective for mounting a GaAs-based chip component in terms of the similarity of the thermal expansion coefficient.

Further, a cap made of an insulating material of the same kind as the insulating substrate, another insulating material, or a metal having good heat dissipation, and having an electromagnetic wave shielding property is provided on the surface of the wiring board on which the semiconductor element is mounted with glass, The semiconductor element may be hermetically sealed by bonding with an adhesive such as a resin or a brazing material.

A specific structure of a package for housing a semiconductor element, which is an example of the high-frequency wiring board of the present invention, and a mounting structure thereof will be described with reference to FIG. FIG. 2 is a schematic sectional view of a semiconductor storage package, particularly a ball grid array (BGA) type package in which connection terminals are formed of ball-shaped terminals.

Referring to FIG. 2, the package A has a cavity 3 formed by an insulating substrate 1 made of an insulating material and a lid 2, in which a chip component 4 of GaAs or the like is formed. Mounted with adhesive.

Further, on the surface and inside of the insulating substrate 1,
A wiring layer 5 electrically connected to the chip component 4 is formed. The wiring layer 5 is desirably made of a low-resistance metal such as copper, silver, or gold in order to minimize conductor loss when transmitting a high-frequency signal. Further, according to the present invention, when transmitting a high-frequency signal of 1 GHz or more to the wiring layer 5, the high-frequency signal needs to be transmitted without loss. , A coplanar line, and a dielectric waveguide line.

In the package A of FIG. 2, a connection electrode layer 6 is formed on the bottom surface of the insulating substrate 1 and is connected to the wiring layer 5 in the package A. A ball-shaped terminal 8 is formed on the connection electrode layer 6 with a brazing material 7 such as solder.

In order to mount the package A on an external circuit board, as shown in FIG. 2, wiring is formed on the surface of an insulating substrate 9 made of an insulating material containing an organic resin such as a polyimide resin, an epoxy resin or a phenol resin. The external circuit board B on which the conductor 10 is formed is mounted via a brazing material. Specifically, the ball-shaped terminals 8 attached to the bottom surface of the insulating substrate 1 in the package A and the wiring conductors 10 of the external circuit board B are brought into contact with each other, and the brazing material 11 such as a solder such as Pb-Sn is used. It is mounted with brazing. Also,
The ball-shaped terminal 8 itself may be melted and connected to the wiring conductor 10.

According to the present invention, the chip component 4 such as GaAs is mounted on the external circuit board B such as a printed board by soldering or mounting with an adhesive or by soldering with such ball-shaped terminals 8 interposed therebetween. In such a surface mounting type package, the thermal expansion difference between the chip component 4 such as GaAs and the insulating substrate 1 of the external circuit board B can be made smaller than that of a conventional ceramic material. Is applied, the occurrence of stress in the mounting portion can be suppressed, and as a result, the long-term reliability of the mounting structure can be improved.

[0046]

EXAMPLE A crystallized glass capable of precipitating two kinds of diopside oxide crystal phases having the following compositions was prepared.

Glass A: 50.2% by weight of SiO ₂ -5.0% by weight of Al ₂ O ₃ -16.1% by weight of MgO-13.6% by weight of SrO -15.1% by weight of glass B: 47.5% by weight of SiO ₂ % -Al ₂ O ₃ 4.9 wt% -MgO16.1 wt% -SrO20 wt% -CaO11.5 wt% Then, with respect to the crystallized glass powder, the average particle size of 5
Using quartz having a particle size of μm or amorphous silica powder having an average particle size of 2 μm, mixing was performed so that the compositions shown in Tables 1 and 2 were obtained. Then, an organic binder, a plasticizer, and toluene were added to the mixture to prepare a slurry.
m green sheets were produced. Then, 10 to 15 green sheets are laminated, and at a temperature of 50 ° C., 100 k
g / cm ² and a thermocompression bonding. The obtained laminate was subjected to a binder removal treatment in a steam-containing / nitrogen atmosphere at 700 ° C., and then fired in dry nitrogen under the conditions shown in Tables 1 and 2 to obtain a porcelain for an insulating substrate.

The obtained ceramics were evaluated for permittivity and dielectric loss by the following methods. The measurement is shape, diameter 2-7mm,
Cut out to 1.5-2.5mm thickness, 60GHz
, And a dielectric cylinder resonator method using a network analyzer and a synthesized sweeper. In the measurement, the dielectric resonator was excited by an NRD guide (non-radiative dielectric line), and the dielectric constant and the dielectric loss were calculated from the resonance characteristics of the TE ₀₂₁ and TE ₀₃₁ modes.

Further, a thermal expansion curve from room temperature to 400 ° C. was taken to calculate a thermal expansion coefficient. Further, the main crystal phase in the sintered body was identified from the X-ray diffraction chart.
The results are shown in Tables 1 and 2.

For some of the samples, ZrO ₂ powder and CaZrO ₃ powder were used in place of quartz and / or amorphous silica as filler components, and porcelain was similarly prepared and evaluated (Sample Nos. 19 to 21). , 35-
37). In addition, the same evaluation was performed using glass C having the following composition instead of the crystallized glasses A and B (Sample Nos. 38 and 39).

Glass C: SiO ₂ 10.4% by weight—Al ₂
O ₃ 2.5 wt% -B ₂ O ₃ 45.3 wt% -CaO35.2 wt% -Na ₂ O6.6 wt%

[0052]

[Table 1]

[0053]

[Table 2]

As is clear from the results in Tables 1 and 2, Si
Sample No. 2 in which the amount of glass containing O ₂ , Al ₂ O ₃ , MgO, SrO, and CaO exceeded 95% by weight. In Nos. 1 and 22, the dielectric loss exceeded 30 × 10 ^-4 and the glass amount was 50
Sample No. less than wt. 10, 14, 18, 34
In this case, it was difficult to perform sintering at a low temperature, and it was not densified. Sample No. 19～21,35～37 as additive component to the glass, but is obtained by blending the ZrO ₂ and CaZrO _3, etc. ZrO ₂ and CaZrO ₃ is precipitated dielectric loss is increased in the sintered body. Further, as glass, B ₂ O ₃
Sample No. using glass C containing a large amount of Sample No. 38 melts. In No. 39, a large amount of glass containing B remained and the dielectric loss tended to increase.

On the other hand, according to the present invention, the sample No. 2-9, 1
In 5, 17, 23 to 28, 32, and 33, precipitation of a quartz phase was observed in the porcelain, and all had a thermal expansion coefficient of 8.5 ppm / ° C. or higher and a measurement frequency of 60 GHz.
It had excellent characteristics with a dielectric constant of 7 or less and a dielectric loss of 30 × 10 ⁻⁴ or less.

In addition, according to the present invention, the sample No. 11-1
In 3, 16, 29 to 31, an amorphous silica phase was present in the porcelain, and the thermal expansion coefficient was 5.5 pp.
m / ° C. or higher and a dielectric constant of 5.
9 or less, and excellent characteristics with a dielectric loss of 20 × 10 ⁻⁴ or less.

[0057]

As described in detail above, the insulating substrate of the high-frequency wiring board of the present invention can be fired at a low temperature of 1000 ° C. or less, so that a wiring layer made of a low-resistance metal such as copper can be formed, and more than 1 GHz. In this high-frequency region, a low dielectric constant and a low dielectric loss allow a high-frequency signal to be transmitted very favorably and without loss.

Further, since this insulating substrate can be controlled to have a thermal expansion characteristic similar to that of a GaAs chip or a printed board, it can be mounted on a GaAs chip or on a motherboard such as a printed board having an insulating substrate containing an organic resin. It has excellent heat cycle resistance when mounted with a brazing material or the like, and can provide a highly reliable mounting structure.

[Brief description of the drawings]

FIG. 1 is a schematic diagram for explaining the structure of an insulating substrate of a wiring board according to the present invention.

FIG. 2 is a schematic cross-sectional view illustrating an example of a mounting structure of a package for housing a semiconductor element, which is an example of a high-frequency wiring board according to the present invention.

[Explanation of symbols]

DI Diopside-type oxide crystal phase Si SiO ₂ crystal phase AM Amorphous silica phase G Amorphous (glass) phase A Semiconductor element storage package (high-frequency wiring board) B External circuit board 1 Insulating substrate 2 Lid 3 Cavity Reference Signs List 4 chip component 5 wiring layer 6 connection electrode layer 7 brazing material 8 ball-shaped terminal 9 insulating substrate 10 wiring conductor 11 brazing material

Claims (5)

[Claims] 1. A composition comprising a diopside oxide crystal phase containing at least Mg, Ca, Si, and Al and a quartz crystal phase, and having a thermal expansion coefficient of 5.5 ppm / ° C. or more from room temperature to 400 ° C. Dielectric constant of 7 or less, 60-77G
A high frequency ceramic insulating substrate, wherein the dielectric loss in Hz is 30 × 10 ^-4 or less, the surface and inside the stripline of the insulating substrate, a microstrip line, coplanar line, the dielectric waveguide A high-frequency wiring board comprising a wiring layer composed of at least one of the lines. 2. The high-frequency wiring board according to claim 1, wherein a GaAs chip component is mounted on the surface of the insulating substrate. 3. The high-frequency wiring board according to claim 1, wherein a thermal expansion coefficient of the high-frequency ceramic from room temperature to 400 ° C. is 8.5 ppm / ° C. or more. 4. The high frequency porcelain is made of SiO ₂ , Al
A high frequency ceramic composition containing ₂ O ₃ , MgO, SrO and CaO and containing 50 to 95% by weight of glass capable of precipitating a diopside oxide crystal phase and 5 to 50% by weight of quartz. The high-frequency wiring board according to any one of claims 1 to 3, wherein the wiring board is fired at a temperature of 800 to 1000C after molding. 5. The glass according to claim 5, wherein said glass is 45 to 55% by weight of SiO _2.
When the Al ₂ O ₃ 3 to 10 wt%, and MgO13~24 wt%, and SrO10~24 wt%, wiring for high frequency according to claim 4, characterized in that it consists of a CaO8~20 wt%, the substrate .