JPH11150064A - Processing method and processor - Google Patents

Processing method and processor

Info

Publication number
JPH11150064A
JPH11150064A JP33228997A JP33228997A JPH11150064A JP H11150064 A JPH11150064 A JP H11150064A JP 33228997 A JP33228997 A JP 33228997A JP 33228997 A JP33228997 A JP 33228997A JP H11150064 A JPH11150064 A JP H11150064A
Authority
JP
Japan
Prior art keywords
substrate
processing
processing liquid
holding means
lcd substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33228997A
Other languages
Japanese (ja)
Other versions
JP3686241B2 (en
Inventor
Hideyuki Takamori
秀之 高森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP33228997A priority Critical patent/JP3686241B2/en
Publication of JPH11150064A publication Critical patent/JPH11150064A/en
Application granted granted Critical
Publication of JP3686241B2 publication Critical patent/JP3686241B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To form a liquid layer of treatment liquid having a thickness required for processing, to the surface even if the periphery of a board bends. SOLUTION: An LCD substrate G is held horizontally by a spin chuck 30, and the surface of the LCD substrate G held horizontally is supplied with developer from a developer supply nozzle 32. A developer holding means 35 is arranged in the position not in contact with the surface of the LCD substrate and besides in contact with the developer supplied to the surface of the LCD substrate G, in the periphery, at least, of the surface of the LCD substrate G. A liquid layer 55 of the developer is held between the developer holding means 35 and the LCD substrate G, on the LCD substrate G.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は,例えばLCD基板
や半導体ウェハのような基板の表面に現像液等の処理液
を塗布する処理方法及び処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing method and a processing apparatus for applying a processing solution such as a developing solution to a surface of a substrate such as an LCD substrate or a semiconductor wafer.

【0002】[0002]

【従来の技術】一般に,液晶表示ディスプレイ(LC
D)装置の製造工程においては,LCD基板上に例えば
ITO(Indium Tin Oxide)の薄膜や
電極パターン等を形成するために,半導体製造工程にお
いて用いられるものと同様なフォトリソグラフィ技術を
用いて回路パターン等をLCD基板の表面のフォトレジ
ストに露光し,その後にこのLCD基板の現像処理する
一連の処理が施される。
2. Description of the Related Art Generally, a liquid crystal display (LC)
D) In the manufacturing process of the device, in order to form, for example, a thin film of ITO (Indium Tin Oxide) or an electrode pattern on the LCD substrate, a circuit pattern is formed using the same photolithography technology used in the semiconductor manufacturing process. Are exposed to a photoresist on the surface of the LCD substrate, and thereafter, a series of processing for developing the LCD substrate is performed.

【0003】ここで,LCD基板の現像処理を行う現像
装置は一連の処理の中でも最も厳密な制御を必要とする
ものの一つである。即ち,現像を行うに際に,スピンチ
ャックに載置された露光後のLCD基板の表面に現像液
を供給し,LCD基板の表面全体にわたって所定の厚さ
を有した現像液の液層を形成させて,LCD基板の表面
を所定の時間均一に現像することが重要である。LCD
基板の表面に現像液を供給する方法としては,従来より
パドル方式,ディップ方式,スプレー方式等が知られて
いる。
[0003] Here, the developing device for developing the LCD substrate is one of the series of processes that requires the strictest control. That is, when developing, a developing solution is supplied to the surface of the exposed LCD substrate placed on the spin chuck, and a liquid layer of the developing solution having a predetermined thickness is formed over the entire surface of the LCD substrate. It is important to uniformly develop the surface of the LCD substrate for a predetermined time. LCD
As a method of supplying a developing solution to the surface of a substrate, a paddle method, a dip method, a spray method, and the like are conventionally known.

【0004】この中でも特にパドル方式は,スピンチャ
ックに水平に載置されたLCD基板の表面に多数の吐出
口を備えた現像液供給ノズルをスキャンさせてLCD基
板の表面全体に現像液を液盛り状態として供給する方式
であり,LCD基板の表面全体の隅々まで確実に現像液
を供給できるので広く普及している。
[0004] Among them, the paddle method, in particular, scans a developing solution supply nozzle provided with a large number of discharge ports on the surface of an LCD substrate mounted horizontally on a spin chuck, and fills the entire surface of the LCD substrate with the developing solution. This is a method of supplying the developer as a state, and is widely used because the developer can be reliably supplied to every corner of the entire surface of the LCD substrate.

【0005】[0005]

【発明が解決しようとする課題】ところで,近年におい
ては生産性向上のために,LCD基板が大型化する傾向
にある。しかしながら,図11に示すような従来の現像
装置においては,大型化したLCD基板Gに対してスピ
ンチャック100の載置面積が相対的に小さくなり,大
型化したLCD基板Gを載置した際には,LCD基板G
の水平姿勢が不安定化する。即ち,スピンチャック10
0の台上面に載置しきれずにはみ出たLCD基板Gの周
縁部の自重により,LCD基板G自体に撓みや傾きが生
じてしまう。このため,現像液の供給後においては,L
CD基板Gの撓み部分に現像液が移動しLCD基板Gの
表面に現像液の不均一な液層が形成される。特に現像液
の偏りによって生じた液層の薄い箇所では処理不良が生
じるおそれがある。
In recent years, the size of LCD substrates has tended to increase in order to improve productivity. However, in the conventional developing device as shown in FIG. 11, the mounting area of the spin chuck 100 becomes relatively small with respect to the large-sized LCD substrate G, and when the large-sized LCD substrate G is mounted. Is the LCD board G
The horizontal attitude of the camera becomes unstable. That is, the spin chuck 10
The LCD substrate G itself is bent or tilted due to its own weight of the peripheral portion of the LCD substrate G that cannot be completely placed on the top surface of the LCD substrate G. Therefore, after the developer is supplied, L
The developer moves to the bent portion of the CD substrate G, and an uneven liquid layer of the developer is formed on the surface of the LCD substrate G. In particular, there is a possibility that a processing failure may occur in a thin portion of the liquid layer caused by the bias of the developer.

【0006】ここで,スピンチャック100の載置面積
を広くすれば上記課題を解決できると考えられるが,ス
ピンチャック100は大型化するほど製造コストがかか
り,特にLCD基板Gの裏面をエア吸着して台上面に載
置するスピンチャック100においてはエアの吸引量が
増加する。また,LCD基板Gの裏面に廻りこんだ現像
液を下から洗浄するには,LCD基板Gの裏面にスピン
チャックが接していない領域が必要である。従って,L
CD基板Gにパーティクルが付着する可能性も高くなり
実用的でない。
Here, it is considered that the above problem can be solved by increasing the mounting area of the spin chuck 100. However, as the size of the spin chuck 100 increases, the manufacturing cost increases. In the spin chuck 100 mounted on the table top, the amount of air suction increases. Further, in order to wash the developing solution that has reached the rear surface of the LCD substrate G from below, an area where the spin chuck is not in contact with the rear surface of the LCD substrate G is required. Therefore, L
The possibility of particles adhering to the CD substrate G also increases, which is not practical.

【0007】本発明はかかる点に鑑みてなされてもので
あり,処理対象となる基板の水平姿勢が不安定化した
り,周縁部が撓んだりしても,その表面に対して,処理
に必要な厚さを有した処理液の液層を形成できる処理方
法,及び該処理方法を好適に実施できる処理装置を提供
して上記問題の解決を図ることを目的とする。
[0007] The present invention has been made in view of such a point, and even if the horizontal posture of the substrate to be processed is unstable or the peripheral portion is bent, the surface of the substrate is not required for processing. An object of the present invention is to provide a processing method capable of forming a liquid layer of a processing liquid having a large thickness, and a processing apparatus capable of suitably performing the processing method, thereby solving the above-mentioned problems.

【0008】[0008]

【課題を解決するための手段】前記目的を達成するため
に,請求項1の発明は,水平に保持した基板の表面に処
理液を供給して,基板に対して所定の処理を施す方法に
おいて,基板を水平に保持する工程と,水平に保持され
た基板の表面に処理液を供給する工程と,基板の表面の
少なくとも周縁部において,基板の表面に接触しない位
置で,かつこの基板の表面に供給された処理液と接触す
る位置に処理液保持手段を配置する工程とを有すること
を特徴とする,処理方法を提供する。かかる処理方法に
よれば,処理液の表面張力によって,処理液保持手段で
処理液が保持された状態となる。したがって,処理液が
基板の表面の撓み部分に移動せず,基板の表面全体にわ
たって処理に必要な厚さを有した処理液の液層を形成で
きる。従って,処理液の移動や偏りによる処理不良を防
止することができる。
According to a first aspect of the present invention, there is provided a method for performing a predetermined process on a substrate by supplying a processing liquid to a surface of the substrate held horizontally. Holding the substrate horizontally, supplying a processing solution to the surface of the substrate held horizontally, and at least at a peripheral portion of the surface of the substrate, at a position not in contact with the surface of the substrate, and at the surface of the substrate. Arranging the processing liquid holding means at a position where the processing liquid holding means comes into contact with the processing liquid supplied to the processing liquid. According to this processing method, the processing liquid is held by the processing liquid holding means due to the surface tension of the processing liquid. Therefore, the processing liquid does not move to the bent portion on the surface of the substrate, and a liquid layer of the processing liquid having a thickness necessary for processing can be formed over the entire surface of the substrate. Therefore, it is possible to prevent processing failure due to movement or deviation of the processing liquid.

【0009】また,請求項2に記載したように,水平に
保持した基板の表面に処理液を供給して,基板に対して
所定の処理を施す方法において,基板を水平に保持する
工程と,基板の表面の少なくとも周縁部において,基板
の表面に接触しない位置で,この基板に所定の間隔をあ
けて処理液保持手段を配置する工程と処理液保持手段を
配置した後に,少なくともこの処理液保持手段と接触す
る厚さまで基板の表面に処理液を供給する工程とを有す
るようにしても良い。このように,処理液保持手段を配
置する工程と基板の表面に処理液を供給する工程との順
番を前後逆に入れ替えても,上記請求項1と同様,処理
液の偏りによる基板の処理不良を防止することができ
る。
According to a second aspect of the present invention, there is provided a method of supplying a processing liquid to a surface of a horizontally held substrate and performing a predetermined treatment on the substrate, wherein the step of holding the substrate horizontally includes the steps of: Arranging the processing liquid holding means at predetermined intervals on the substrate at a position at which the processing liquid holding means is not in contact with the substrate surface at least at a peripheral edge of the substrate surface; Supplying the processing liquid to the surface of the substrate up to a thickness in contact with the means. In this way, even if the order of the step of disposing the processing liquid holding means and the step of supplying the processing liquid to the surface of the substrate are reversed, the processing failure of the substrate due to the bias of the processing liquid is the same as in the first aspect. Can be prevented.

【0010】さらに,請求項3に記載したように,処理
液保持手段は,メッシュ状であるのが好ましい。かかる
構成によれば,最小限の接触によって処理液の液層を効
果的に保持できる。
Further, as described in claim 3, the processing liquid holding means is preferably in a mesh shape. According to such a configuration, the liquid layer of the processing liquid can be effectively held with minimum contact.

【0011】請求項4の発明は,基板を水平に保持する
保持手段と,保持手段に保持された基板の表面に処理液
を供給する供給手段とを備えた処理装置であって,少な
くとも基板の表面の基板周縁部における,基板の表面に
接触しない位置で,かつこの基板の表面に供給された処
理液と接触する位置に移動自在な,処理液保持手段を備
えたことを特徴とする,処理装置を提供する。かかる処
理装置によれば,請求項1,2に記載の処理方法を好適
に実施することができる。また,基板に対して保持手段
の保持面が相対的に小さい場合にあっても,基板を水平
状態で保持した時と同様に,基板の表面全体に処理に必
要な厚さを有した処理液の液層を形成できる。
According to a fourth aspect of the present invention, there is provided a processing apparatus comprising a holding means for holding a substrate horizontally, and a supply means for supplying a processing liquid to a surface of the substrate held by the holding means. A processing liquid holding means which is movable at a position on the peripheral edge of the substrate which is not in contact with the surface of the substrate and which is in contact with the processing liquid supplied to the surface of the substrate. Provide equipment. According to such a processing apparatus, the processing method according to claims 1 and 2 can be suitably implemented. Even when the holding surface of the holding means is relatively small with respect to the substrate, the processing liquid having a thickness necessary for processing is applied to the entire surface of the substrate in the same manner as when the substrate is held horizontally. Can be formed.

【0012】この場合,請求項5に記載したように,処
理液保持手段を,基板の表面上方で吊下される構成とす
れば,処理液保持手段を容易に基板の表面に供給された
処理液に接触する位置に配置できる。
In this case, if the processing liquid holding means is configured to be suspended above the surface of the substrate, the processing liquid holding means can be easily supplied to the surface of the substrate. It can be placed at the position where it comes into contact with the liquid.

【0013】また,請求項6に記載したように,基板周
縁部を下方から支持する支持手段を備え,少なくとも基
板を挟んでこの支持手段と対向する位置に配置自在なも
のにしてもよく,この場合,請求項7に記載したよう
に,処理液保持手段は,当該支持手段に支持されるもの
であるのがなお好ましい。いずれの構成においても,処
理液保持手段だけでなく,支持手段を付加することによ
り基板自体が撓むのを抑え,均一な処理液の液層が形成
を促すことができる。
Further, as described in claim 6, a supporting means for supporting the peripheral portion of the substrate from below may be provided, and may be arranged at least at a position facing the supporting means with the substrate interposed therebetween. In this case, it is more preferable that the processing liquid holding means is supported by the supporting means. In any of the configurations, by adding not only the processing liquid holding means but also the supporting means, the substrate itself can be prevented from bending, and a uniform liquid layer of the processing liquid can be promoted.

【0014】また,請求項8にしたように,処理液保持
手段を,メッシュ状とすれば,既述したように,最小限
の接触によって処理液の液層を効果的に保持できる。
Further, if the processing liquid holding means has a mesh shape, the liquid layer of the processing liquid can be effectively held with minimum contact as described above.

【0015】また,請求項9に記載したように,処理液
保持手段に,処理液を基板の表面に供給するノズル機構
を備えるようにしてもよい。かかる構成によれば,処理
液の供給と処理液の液層の厚さの維持とを一つ手段で行
える。従って,処理装置の簡素化や処理時間の短縮化が
図れる。
Further, the processing liquid holding means may be provided with a nozzle mechanism for supplying the processing liquid to the surface of the substrate. According to this configuration, the supply of the processing liquid and the maintenance of the thickness of the liquid layer of the processing liquid can be performed by one means. Therefore, the processing device can be simplified and the processing time can be reduced.

【0016】[0016]

【発明の実施の形態】以下,本発明の好ましい実施の形
態を添付図面に基いて説明する。図1は,本実施の形態
にかかる処理装置としての現像装置18を組み込んでL
CD基板Gに対して一連のフォトリソグラフィ工程を行
う塗布現像処理システムの斜視図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a perspective view of an image forming apparatus incorporating a developing device 18 as a processing device according to the present embodiment.
FIG. 2 is a perspective view of a coating and developing system that performs a series of photolithography processes on a CD substrate G.

【0017】この塗布現像処理システム1は,例えば矩
形状のLCD基板Gを搬入・搬出するローダ部2と,L
CD基板Gを処理する第1の処理部3と,この第1の処
理部3とインターフェイス部4を介して連設された第2
の処理部5と,この第2の処理部5と例えば露光装置6
等との間でLCD基板Gを授受するためのインターフェ
イス部7から構成されている。
The coating and developing system 1 includes a loader unit 2 for loading and unloading a rectangular LCD substrate G, for example,
A first processing unit 3 for processing the CD substrate G, and a second processing unit 3 connected to the first processing unit 3 via the interface unit 4
Processing unit 5, the second processing unit 5, and the exposure device 6
And an interface unit 7 for exchanging the LCD substrate G with the other devices.

【0018】ローダ部2には,カセットステーション1
0が設けられており,このカセットステーション10に
は未処理のLCD基板Gを収納するカセット11と,処
理済みのLCD基板Gを収納するカセット12とがそれ
ぞれ複数個載置自在である。またローダ部2には,未処
理のLCD基板Gを搬入または搬出するためのサブ搬送
アーム13が備えられている。なお,サブ搬送アーム1
3はY,Z方向への移動とθ方向に回転可能に構成され
ている。
The loader unit 2 includes a cassette station 1
The cassette station 10 has a plurality of cassettes 11 for storing unprocessed LCD substrates G and a plurality of cassettes 12 for storing processed LCD substrates G. The loader unit 2 is provided with a sub-transport arm 13 for loading or unloading an unprocessed LCD substrate G. The sub-transfer arm 1
Reference numeral 3 is configured to be movable in the Y and Z directions and rotatable in the θ direction.

【0019】第1の処理部3には,LCD基板Gに対し
て所定の処理を施す各種の処理装置がメイン搬送アーム
15の搬送路16を挟んで両側に配置されている。搬送
路16の一方の側に,カセット11から取り出されたL
CD基板Gを洗浄するためのブラシ洗浄装置17,現像
装置18が並んで配置され,搬送路16を挟んで反対側
に,LCD基板Gに疎水化処理を施すアドヒージョン装
置19,加熱装置20,LCD基板Gを所定の温度に冷
却する冷却装置21が適宜多段に配置されている。
In the first processing section 3, various processing apparatuses for performing predetermined processing on the LCD substrate G are arranged on both sides of the transfer path 16 of the main transfer arm 15. On one side of the transport path 16, the L
A brush cleaning device 17 for cleaning the CD substrate G and a developing device 18 are arranged side by side, and an adhesion device 19 for performing hydrophobic treatment on the LCD substrate G, a heating device 20, and an LCD on the opposite side of the transport path 16 therebetween. Cooling devices 21 for cooling the substrate G to a predetermined temperature are appropriately arranged in multiple stages.

【0020】第2の処理部5には,メイン搬送アーム2
2の搬送路23の一方の側に,本実施の形態にかかる塗
布・周縁部除去装置24が配置され,搬送路22を挟ん
で反対側には,加熱装置20,冷却装置21が適宜多段
に配置されている。
The second processing unit 5 includes a main transfer arm 2
The coating / periphery removing device 24 according to the present embodiment is disposed on one side of the second transport path 23, and the heating device 20 and the cooling device 21 are appropriately arranged in multiple stages on the opposite side across the transport path 22. Are located.

【0021】インターフェイス部7には,LCD基板G
を一時待機させるためのカセット25と,このカセット
25との間でLCD基板Gの出入れを行うサブ搬送アー
ム26と,LCD基板Gの受渡し台27が設けられてい
る。なお,これら第1の処理部3及び第2の処理部5の
構成,各種装置の配列等は適宜変更することが可能であ
る。
The interface unit 7 includes an LCD substrate G
, A sub-transfer arm 26 for moving the LCD substrate G in and out of the cassette 25, and a transfer stand 27 for the LCD substrate G. The configurations of the first processing unit 3 and the second processing unit 5, the arrangement of various devices, and the like can be appropriately changed.

【0022】次に,上記塗布現像処理システム1に組み
込まれた現像装置18の構成について説明する。図2は
現像装置18の構成を説明するための概略的な断面図で
あり,図3はその平面図である。
Next, the structure of the developing device 18 incorporated in the coating and developing system 1 will be described. FIG. 2 is a schematic sectional view for explaining the configuration of the developing device 18, and FIG. 3 is a plan view thereof.

【0023】この現像装置18は,ケーシング18a内
にて,LCD基板Gを水平に載置するスピンチャック3
0と,スピンチャック30及びLCD基板Gを包囲する
ように配置された,上面が開口した円筒形状の処理容器
31と,LCD基板Gの表面に処理液としての現像液を
供給する現像液供給ノズル32と,LCD基板Gの表面
に現像処理後に脱イオン水又は純水等のリンス液を供給
するリンス液供給ノズル33と,LCD基板Gの表面に
2ガス等の不活性ガスを供給するLCD基板Gの表面
上方に移動自在な乾燥気体供給ノズル34と,LCD基
板Gの表面に供給された現像液の保持する現像液保持手
段35とを備えている。
The developing device 18 includes a spin chuck 3 for horizontally mounting an LCD substrate G in a casing 18a.
0, a cylindrical processing container 31 having an open top surface and arranged to surround the spin chuck 30 and the LCD substrate G, and a developing solution supply nozzle for supplying a developing solution as a processing solution to the surface of the LCD substrate G A rinsing liquid supply nozzle 33 for supplying a rinsing liquid such as deionized water or pure water to the surface of the LCD substrate G after development processing; and an LCD for supplying an inert gas such as N 2 gas to the surface of the LCD substrate G A dry gas supply nozzle 34 movable above the surface of the substrate G and a developer holding means 35 for holding the developer supplied to the surface of the LCD substrate G are provided.

【0024】スピンチャック30の台上面には図示しな
いエア吸着部が設けられており,この図示しないエア吸
着部の吸引によって,スピンチャック30はLCD基板
Gの裏面を吸着し台上面に水平に載置するように構成さ
れている。さらに,スピンチャック30の下面は,処理
容器31の下方に設けられた昇降回転機構36に接続さ
れている支柱37の上面に固着されており,昇降回転機
構36の稼働によって,スピンチャック30は昇降移動
すると共に回転自在になるように構成されている。
An air suction unit (not shown) is provided on the top surface of the spin chuck 30. The suction of the air suction unit (not shown) causes the spin chuck 30 to suction the back surface of the LCD substrate G and to horizontally mount on the top surface of the table. It is configured to be placed. Further, the lower surface of the spin chuck 30 is fixed to the upper surface of a column 37 connected to an elevating / rotating mechanism 36 provided below the processing vessel 31, and the spin chuck 30 is moved up and down by the operation of the elevating / rotating mechanism 36. It is configured to be movable and rotatable.

【0025】スピンチャック30及びLCD基板Gを包
囲する処理容器31は,底面に容器下部40と,この容
器下部40の外周を包囲するように配置され底面が傾斜
している周溝41aを有する円筒形状の容器基部41
と,容器基部41の周溝41aの内周に沿って配置され
上端からスピンチャック30に保持されているLCD基
板Gの裏面側に向かって上向きに傾斜する傾斜面42a
を有する円形筒状の内容器42と,この内容器42の外
周側に配置され図示しない昇降手段によって昇降移動し
周溝41a内から突出可能な円形筒状の外容器43とか
ら構成されている。
The processing container 31 surrounding the spin chuck 30 and the LCD substrate G has a container lower portion 40 on the bottom surface and a cylindrical groove 41a disposed so as to surround the outer periphery of the container lower portion 40 and having an inclined bottom surface. Container base 41 of shape
And an inclined surface 42a that is arranged along the inner periphery of the peripheral groove 41a of the container base 41 and that is inclined upward from the upper end toward the rear surface of the LCD substrate G held by the spin chuck 30.
And a circular cylindrical outer container 43 which is arranged on the outer peripheral side of the inner container 42 and which can be moved up and down by an elevating means (not shown) and can protrude from the inside of the peripheral groove 41a. .

【0026】LCD基板Gの現像処理を施す際には,外
容器43を図2に二点斜線で示した外容器43’の位置
まで上昇移動させることで,現像液が処理容器31外に
飛び散らないように構成されている。この場合,処理容
器31内に飛び散った処理液は,容器基部41の周溝4
1aにおける最下部側の底面に接続されている排液管4
4を通じて排液される。また,処理容器31内の雰囲気
は,容器下部40に接続されている排気管45を通じて
排気される。
When developing the LCD substrate G, the developer is scattered out of the processing container 31 by moving the outer container 43 upward to the position of the outer container 43 'shown by two-dotted lines in FIG. Not configured. In this case, the processing liquid scattered in the processing container 31 is transferred to the peripheral groove 4 of the container base 41.
Drain pipe 4 connected to the bottom surface on the lowermost side in 1a
Drained through 4. The atmosphere in the processing container 31 is exhausted through an exhaust pipe 45 connected to the lower portion 40 of the container.

【0027】内容器42の傾斜面42aには,複数本例
えば4本の支持ピン46がLCD基板Gの四隅にそれぞ
れ配置されている。この支持ピン46は,LCD基板G
の裏面を傷つけないように上端を球面状に形成している
と共に,材質に例えば樹脂,ゴム,軟質の金属(真鍮,
アルミ等)等を用いている。LCD基板Gをスピンチャ
ック30に載置した際には,支持ピン46は,スピンチ
ャック30の台上面に載置しきれずにはみ出したLCD
基板Gの周縁部を支持し,LCD基板Gを水平にスピン
チャック30に載置させる機能を有する。なお,スピン
チャック30の載置されたLCD基板Gの下方には,L
CD基板Gの裏面を洗浄するために純水を供給する裏面
洗浄ノズル47が配置されている。
On the inclined surface 42a of the inner container 42, a plurality of support pins 46, for example, four support pins 46 are arranged at four corners of the LCD substrate G, respectively. The support pins 46 are connected to the LCD substrate G
The upper end is formed in a spherical shape so as not to damage the back surface of the resin, and the material is resin, rubber, soft metal (brass,
Aluminum, etc.). When the LCD substrate G is mounted on the spin chuck 30, the support pins 46 are mounted on the surface of the spin chuck 30.
It has a function of supporting the periphery of the substrate G and placing the LCD substrate G horizontally on the spin chuck 30. Note that, below the LCD substrate G on which the spin chuck 30 is mounted, L
A back surface cleaning nozzle 47 for supplying pure water for cleaning the back surface of the CD substrate G is provided.

【0028】現像液供給ノズル32は,図3に示すよう
に,処理容器31の上方に配置されており,長辺方向の
幅はLCD基板Gの一辺(短辺)よりも長くなるように
設定されている。また,現像液供給ノズル32の上部に
は,現像液を現像液供給ノズル32内部に供給するため
の現像液供給チューブ50が接続されている。さらに,
図4に示すように,現像液供給ノズル32の下面には全
幅に渡って現像液の吐出口51が密に並んだ状態で多数
設けられており,現像液供給チューブ50によって現像
液供給ノズル32内部に供給された現像液は,これら吐
出口51から隙間のない状態で膜状にLCD基板Gの表
面に吐出されるようになっている。
As shown in FIG. 3, the developing solution supply nozzle 32 is disposed above the processing container 31, and the width in the long side direction is set to be longer than one side (short side) of the LCD substrate G. Have been. Further, a developer supply tube 50 for supplying a developer to the inside of the developer supply nozzle 32 is connected to an upper portion of the developer supply nozzle 32. further,
As shown in FIG. 4, on the lower surface of the developer supply nozzle 32, a large number of developer discharge ports 51 are provided in a state of being densely arranged over the entire width. The developer supplied to the inside is discharged from these discharge ports 51 in a film-like state on the surface of the LCD substrate G without any gap.

【0029】図3に示すように,現像液供給ノズル32
の一端にブラケット52が接続されており,このブラケ
ット52は,モータ53の回転の切替によって正逆回転
されるボールネジ軸54に係合される。したがって,現
像液供給ノズル32は,モータ53の回転稼働によっ
て,LCD基板Gの長辺方向に沿ってLCD基板Gの上
方をスライド自在である。そして,吐出口51から現像
液を吐出させた状態で現像液供給ノズル32を処理容器
31の上方を横切るように移動させれば,図5に示すよ
うにLCD基板Gの表面全体に現像液をむら無く供給
し,液層55を形成できるようになっている。
As shown in FIG. 3, the developer supply nozzle 32
Is connected to a ball screw shaft 54 that is rotated forward and reverse by switching the rotation of a motor 53. Therefore, the developer supply nozzle 32 is slidable above the LCD substrate G along the long side direction of the LCD substrate G by the rotation operation of the motor 53. Then, when the developer supply nozzle 32 is moved across the processing container 31 while the developer is being discharged from the discharge port 51, the developer is spread over the entire surface of the LCD substrate G as shown in FIG. The liquid is supplied evenly so that the liquid layer 55 can be formed.

【0030】リンス液供給ノズル33は,図3に示すよ
うに,処理容器31の上方に配置されており,上部には
リンス液供給回路56が接続され,裏面の2箇所にはノ
ズル57が設けられている。さらに,リンス液供給ノズ
ル33は,図示しない駆動機構によって,LCD基板G
の長辺方向に沿ってLCD基板Gの上方をスライド移動
するように構成されている。
As shown in FIG. 3, the rinsing liquid supply nozzle 33 is disposed above the processing vessel 31, a rinsing liquid supply circuit 56 is connected to the upper part, and nozzles 57 are provided at two places on the back surface. Have been. Further, the rinsing liquid supply nozzle 33 is driven by a driving mechanism (not shown) to drive the LCD substrate G
Is configured to slide above the LCD substrate G along the long side direction.

【0031】現像液保持手段35の上面には,図2に示
すように,線材によって構成された吊り下げ部材60が
接続され,この吊り下げ部材60は図示しない動力機構
に繋がっている。この図示しない動力機構の稼働によっ
て吊り下げ部材60の引き上げ及び引き下げが行われる
ようになっている。即ち,吊り下げ部材60が引き上げ
られた場合には現像液保持手段35が上昇移動し,LC
D基板Gの表面から離れるようになっており,吊り下げ
部材60が引き下げられた場合には現像液保持手段35
が下降移動し,LCD基板Gの表面に接近するように構
成されている。
As shown in FIG. 2, a suspending member 60 made of a wire is connected to the upper surface of the developing solution holding means 35, and the suspending member 60 is connected to a power mechanism (not shown). The lifting and lowering of the suspension member 60 is performed by the operation of the power mechanism (not shown). That is, when the suspending member 60 is lifted, the developer holding means 35 moves upward, and LC
When the suspension member 60 is pulled down, the developer holding means 35 is moved away from the surface of the D substrate G.
Is moved downward and approaches the surface of the LCD substrate G.

【0032】現像液供給ノズル32によってLCD基板
Gの表面に現像液の液層55を形成させた後は,図2及
び図5に示すように,吊り下げ部材60を引き下げ,L
CD基板Gの表面に接触しない位置で,かつLCD基板
Gの表面に供給された現像液の液層55に接触する位置
にまで現像液保持手段35を下降する構成になってい
る。即ち,図6に示すように,LCD基板Gの表面と現
像液保持手段35の下面との間に現像液の液層55が挟
まれた状態となり,現像に必要な厚さを有した現像液の
液層55を安定に維持できる構成になっている。
After the developing solution supply nozzle 32 forms the developing solution layer 55 on the surface of the LCD substrate G, as shown in FIGS.
The structure is such that the developer holding means 35 is lowered to a position not in contact with the surface of the CD substrate G and to a position in contact with the liquid layer 55 of the developer supplied to the surface of the LCD substrate G. That is, as shown in FIG. 6, a liquid layer 55 of the developing solution is sandwiched between the surface of the LCD substrate G and the lower surface of the developing solution holding means 35, and the developing solution having a thickness necessary for development is provided. The liquid layer 55 can be stably maintained.

【0033】さらに,図5に示すように,現像液保持手
段35は,LCD基板Gと同様に矩形状に形成されてい
る。現像液保持手段35の上面及び下面は,外部雰囲気
と連通する隙間62を全面に渡って網の目のように配列
したメッシュ状となっており,現像液保持手段35の下
面において隙間62の枠部分が現像液の液層55と接触
するようになっている。
Further, as shown in FIG. 5, the developing solution holding means 35 is formed in a rectangular shape like the LCD substrate G. The upper surface and the lower surface of the developer holding means 35 are formed in a mesh shape in which gaps 62 communicating with the external atmosphere are arranged like a mesh over the entire surface. The portion comes into contact with the liquid layer 55 of the developer.

【0034】また,現像液の液層55に接触する現像液
保持手段35の下面は,少なくともLCD基板Gの裏面
を支持している前記支持ピン46と対向する位置までオ
ーバラップできる形態を有している。これにより,現像
液保持手段35は,LCD基板Gの中央からスピンチャ
ック30の台上面に載置しきれなかったLCD基板Gの
周辺部までをほぼ覆う構成となる。従って,現像液保持
手段35を現像液の処理液に接触させた際には,現像液
保持手段35はLCD基板Gの表面全体に渡って現像液
の液層55を漏れなく保持できるようになっている。
Further, the lower surface of the developing solution holding means 35 which comes into contact with the liquid layer 55 of the developing solution has such a form that it can overlap at least to the position facing the support pins 46 supporting the back surface of the LCD substrate G. ing. As a result, the developer holding means 35 is configured to substantially cover the area from the center of the LCD substrate G to the peripheral portion of the LCD substrate G that cannot be placed on the top surface of the spin chuck 30. Therefore, when the developing solution holding means 35 is brought into contact with the processing solution of the developing solution, the developing solution holding means 35 can hold the liquid layer 55 of the developing solution over the entire surface of the LCD substrate G without leakage. ing.

【0035】次に,以上のように構成された本実施の形
態にかかる現像装置18を備えた処理システムにおける
処理工程について説明する。
Next, processing steps in a processing system provided with the developing device 18 according to the present embodiment configured as described above will be described.

【0036】まず,カセット11内に収容された未処理
のLCD基板Gはローダ部2のサブ搬送アーム13によ
って取出された後,第1の処理部3のメイン搬送アーム
15に受け渡され,そして,ブラシ洗浄装置17内に搬
送される。このブラシ洗浄装置17内にてブラシ洗浄さ
れたLCD基板Gは,この後,アドヒージョン装置19
にて疎水化処理が施され,冷却装置21にて冷却された
後,塗布・周縁部除去装置24に搬入される。そして,
塗布・周縁部除去装置24内から搬出されたLCD基板
Gは,加熱装置20内に搬入されレジスト膜に対してべ
ーキング処理が施された後,露光装置6にて所定のパタ
ーンが露光される。そして,露光後のLCD基板Gは現
像装置18内へ搬送され,現像液により現像された後に
リンス液により現像液を洗い流し,現像処理を完了す
る。
First, the unprocessed LCD substrate G accommodated in the cassette 11 is taken out by the sub-transport arm 13 of the loader unit 2 and then transferred to the main transport arm 15 of the first processing unit 3. , And is transported into the brush cleaning device 17. The LCD substrate G, which has been brush-cleaned in the brush cleaning device 17, is thereafter subjected to an adhesion device 19.
After being subjected to a hydrophobizing treatment and cooled by the cooling device 21, it is carried into the coating / peripheral portion removing device 24. And
The LCD substrate G carried out of the coating / periphery removing device 24 is carried into the heating device 20 and subjected to a baking process on the resist film. . Then, the exposed LCD substrate G is transported into the developing device 18, and after being developed by the developing solution, the developing solution is washed away by the rinsing solution, and the developing process is completed.

【0037】ここで,現像装置18における処理工程を
図7に示すフローチャートに従って説明する。
Here, the processing steps in the developing device 18 will be described with reference to the flowchart shown in FIG.

【0038】まず,メイン搬送アーム15が現像装置1
8内に進入し,LCD基板Gが現像装置18内に搬入さ
れる(S1)。そしてLCD基板Gは,上昇したスピン
チャック30の台上面に吸着保持された状態となる。L
CD基板Gをスピンチャック30に受け渡した後,メイ
ン搬送アーム15は,現像装置18外に退出する。
First, the main transfer arm 15 is connected to the developing device 1
8, the LCD substrate G is carried into the developing device 18 (S1). Then, the LCD substrate G is sucked and held on the upper surface of the raised spin chuck 30. L
After transferring the CD substrate G to the spin chuck 30, the main transfer arm 15 moves out of the developing device 18.

【0039】次いで,スピンチャック30が下降する。
このとき,図2に示したように,スピンチャック30の
台上面に載置しきれなかったLCD基板Gの周辺部は,
支持ピン46に支持される(S2)。このように,スピ
ンチャック30の台上面がLCD基板Gに対して相対的
に小さい場合でも,LCD基板Gは水平な状態でLCD
基板Gが処理容器31内に収納される。
Next, the spin chuck 30 descends.
At this time, as shown in FIG. 2, the peripheral portion of the LCD substrate G that could not be placed on the top surface of the spin chuck 30 is
It is supported by the support pin 46 (S2). As described above, even if the upper surface of the spin chuck 30 is relatively small with respect to the LCD substrate G, the LCD substrate G is kept horizontal and the LCD substrate G is
The substrate G is stored in the processing container 31.

【0040】次いで,現像液供給ノズル32が,LCD
基板Gの長辺方向に沿って,LCD基板Gの一端縁から
他端縁に向かって移動を開始する。移動中に,現像液供
給ノズル32から現像液を供給しLCD基板Gの表面に
現像液を塗布する。そして,現像液供給ノズル32がL
CD基板Gの他端縁の位置まで移動することで,LCD
基板Gの表面全体に現像液が供給されることになる(S
3)。その後,現像液供給ノズル32は所定位置まで待
避する。
Next, the developer supply nozzle 32 is
The movement of the LCD substrate G from one end to the other end is started along the long side direction of the substrate G. During the movement, the developing solution is supplied from the developing solution supply nozzle 32 to apply the developing solution to the surface of the LCD substrate G. Then, the developer supply nozzle 32
By moving to the position of the other edge of the CD substrate G, the LCD
The developer is supplied to the entire surface of the substrate G (S
3). Thereafter, the developer supply nozzle 32 retracts to a predetermined position.

【0041】次いで,現像液保持手段35が,処理容器
31の上方から下降し,LCD基板Gの表面に形成され
た現像液の液層55に接触した時点で停止する。こうし
て,現像液の液層55に接触する位置に配置された現像
液保持手段35は,現像液の液層55を保持する(S
4)。即ち,現像液の表面張力によって,現像液はLC
D基板Gと現像液保持手段35の下面との間に保持され
る。従って,LCD基板G上においては,現像液が均一
な厚さをもって存在することとなる。
Next, the developing solution holding means 35 descends from above the processing container 31 and stops when it comes into contact with the developing solution layer 55 formed on the surface of the LCD substrate G. In this way, the developer holding means 35 arranged at a position in contact with the developer liquid layer 55 holds the developer liquid layer 55 (S
4). That is, due to the surface tension of the developer, the developer becomes LC
It is held between the D substrate G and the lower surface of the developer holding means 35. Therefore, the developing solution has a uniform thickness on the LCD substrate G.

【0042】また,現像液保持手段35はメッシュ状に
形成されているので,現像液の液層55にかかる接触面
積を最小限に抑えながらも,効果的な保持を行える。さ
らに,現像中に,多少の撓みや傾きがLCD基板Gに生
じても,LCD基板Gの表面には薄膜な現像液の液層5
5を発生させない。従って,所定の時間放置しておけ
ば,LCD基板Gの表面の現像処理が安定して行われる
(S5)。
Further, since the developing solution holding means 35 is formed in a mesh shape, effective holding can be performed while minimizing the contact area of the developing solution with the liquid layer 55. Further, even if the LCD substrate G is slightly bent or tilted during the development, the liquid layer 5 of the thin developing solution is formed on the surface of the LCD substrate G.
5 is not generated. Therefore, if left for a predetermined time, the developing process on the surface of the LCD substrate G is performed stably (S5).

【0043】所定の時間が経過して,現像処理が終了す
ると,現像液保持手段35は上昇し,LCD基板Gの表
面から離れる。その後,リンス液供給ノズル33をLC
D基板Gの表面上方に移動させ純水を供給しLCD基板
Gの表面洗浄を行いつつ,裏面洗浄ノズル47からも純
水を供給させLCD基板Gの裏面洗浄も行う(S6)。
こうして,LCD基板Gから現像液を洗い流し,リンス
液供給ノズル33と裏面洗浄ノズル47からの純水の供
給が停止する。そして,LCD基板Gを回転させながら
乾燥気体供給ノズル34をLCD基板Gの上方に移動さ
せ,LCD基板Gの表面にN2ガス等の不活性ガスを吹
き付ける。こうして,LCD基板Gから純水が振り切ら
れ乾燥処理が行われる(S7)。その後,LCD基板G
の回転が停止し,乾燥気体供給ノズル34からのN2
スの供給が停止する(S8)。
When a predetermined time has elapsed and the developing process is completed, the developing solution holding means 35 rises and separates from the surface of the LCD substrate G. After that, the rinsing liquid supply nozzle 33 is
The upper surface of the D substrate G is moved to supply pure water to clean the front surface of the LCD substrate G, and at the same time, pure water is also supplied from the back surface cleaning nozzle 47 to clean the rear surface of the LCD substrate G (S6).
Thus, the developer is washed away from the LCD substrate G, and the supply of pure water from the rinse liquid supply nozzle 33 and the back surface cleaning nozzle 47 is stopped. Then, the dry gas supply nozzle 34 is moved above the LCD substrate G while rotating the LCD substrate G, and an inert gas such as N 2 gas is blown onto the surface of the LCD substrate G. In this way, the pure water is shaken off from the LCD substrate G and a drying process is performed (S7). Then, the LCD substrate G
Is stopped, and the supply of the N 2 gas from the dry gas supply nozzle 34 is stopped (S8).

【0044】以上のような処理が終了した後,メイン搬
送アーム15が現像装置18内に進入する。そして,ス
ピンチャック30に載置されたLCD基板Gがメイン搬
送アーム15に受け渡され,メイン搬送アーム15が現
像装置18外に退出し,LCD基板Gが現像装置18内
から搬出される(S9)。
After the above processing is completed, the main transfer arm 15 enters the developing device 18. Then, the LCD substrate G mounted on the spin chuck 30 is transferred to the main transfer arm 15, the main transfer arm 15 retreats outside the developing device 18, and the LCD substrate G is unloaded from the developing device 18 (S9). ).

【0045】かくして,本実施の形態によれば,現像液
保持手段35によって現像液の液層55を保持すること
により,LCD基板Gの表面全体に渡って処理に必要な
厚さを有した現像液の液層55を形成することができ
る。従って,現像液の偏り等による現像不良を防止で
き,安定した現像処理が行える。
Thus, according to the present embodiment, the developing solution holding means 35 holds the developing solution layer 55 so that the developing solution having a thickness necessary for processing can be obtained over the entire surface of the LCD substrate G. A liquid layer 55 of the liquid can be formed. Therefore, it is possible to prevent the development failure due to the bias of the developer or the like, and it is possible to perform a stable development process.

【0046】なお,本実施の形態にかかる現像装置18
の処理工程において,現像液供給ノズル32から現像液
を供給する工程S3の後に,現像液保持手段35が現像
液の液層55を保持する工程S4を行う場合について説
明をしたが,先に現像液保持手段35をLCD基板Gに
所定の間隔をあけて配置し,その後に,現像液供給ノズ
ル32から現像液を供給するようにしてもよい。
The developing device 18 according to the present embodiment
In the processing step (3), the case where the developer holding means 35 performs the step S4 of holding the developer liquid layer 55 after the step S3 of supplying the developer from the developer supply nozzle 32 has been described. The liquid holding means 35 may be arranged at a predetermined interval on the LCD substrate G, and thereafter, the developer may be supplied from the developer supply nozzle 32.

【0047】なお,本発明の実施の形態の一例について
説明したが,本発明はこの例に限定されるものでなく,
種々の様態を採りうるものである。例えば,図8に示す
ように,現像液保持手段70が,現像液をLCD基板G
の表面に供給するノズル機構を備えているようにしても
よい。即ち,現像液保持手段70は,隙間62同士の間
に現像液を吐出するノズル機構としての吐出口71を設
け,下面全体に渡って吐出口71が多数配置されるよう
に構成されている。かかる構成によれば,現像液の供給
と現像液の液層55の厚さの維持とを一つの手段で行え
る。従って,現像装置18の簡素化や現像時間の短縮を
実現できる。
Although an example of the embodiment of the present invention has been described, the present invention is not limited to this example.
It can take various aspects. For example, as shown in FIG.
May be provided with a nozzle mechanism for supplying the nozzle surface. That is, the developing solution holding means 70 is provided with a discharge port 71 as a nozzle mechanism for discharging the developing solution between the gaps 62, and is configured such that a large number of discharge ports 71 are arranged over the entire lower surface. According to this configuration, the supply of the developing solution and the maintenance of the thickness of the developing solution layer 55 can be performed by one unit. Therefore, simplification of the developing device 18 and shortening of the developing time can be realized.

【0048】また,基板の表面を全面に渡って被う形態
としなくとも,図9に示した現像液保持手段72のよう
に,中央部分をくり抜いた額縁状に形成し,少なくとも
LCD基板Gの周縁部において,LCD基板Gの表面に
接触しない位置で,かつこのLCD基板Gの表面に供給
された現像液の液層55を保持するように構成してもよ
い。かかる構成によれば,現像液保持手段72の簡素
化,重量の軽減化を図ることをができる。
Further, even if the surface of the substrate is not covered over the entire surface, it is formed in a frame shape with a central portion hollowed out as in the developing solution holding means 72 shown in FIG. The peripheral portion may be configured to hold the liquid layer 55 of the developer supplied to the position not in contact with the surface of the LCD substrate G and to the surface of the LCD substrate G. According to such a configuration, the developer holding means 72 can be simplified and the weight can be reduced.

【0049】また,現像液保持手段を支持する場合,前
記した吊り下げ方式に替えて,図10に示したように,
現像液保持手段75を,LCD基板Gの周辺部下部でL
CD基板Gを支持している支持ピン46に固着された略
コ字型の支持部材76によって支持するようにしてもよ
い。かかる構成によれば,LCD基板Gの上方の吊り下
げ機構等は不要であり,LCD基板Gの容器内に対する
搬入出が容易となる。
When the developer holding means is supported, instead of the above-mentioned suspension system, as shown in FIG.
The developer holding means 75 is moved to the lower part of the periphery of the LCD substrate G by L
The support may be made by a substantially U-shaped support member 76 fixed to the support pins 46 supporting the CD substrate G. According to such a configuration, a suspending mechanism above the LCD substrate G is not required, and it is easy to carry the LCD substrate G into and out of the container.

【0050】また,基板は上記LCD基板Gに限るもの
でなく,半導体ウェハ,ガラス基板,CD基板,フォト
マスク,プリント基板,セラミック基板等でも可能であ
る。
The substrate is not limited to the LCD substrate G, but may be a semiconductor wafer, a glass substrate, a CD substrate, a photomask, a printed substrate, a ceramic substrate, or the like.

【0051】[0051]

【発明の効果】請求項1,2に記載の発明によれば,水
平姿勢が不安定化した基板であっても,基板の表面全体
にわたって処理に必要の厚さを有した処理液の液層を形
成して,これを保持することができる。従って,大型化
した基板に対しても,好適に処理を実施することがで
き,歩留まりの向上を図ることが可能である。また,請
求項3に記載の発明によれば,最小限の接触によって処
理液の液層を効果的に保持することができる。
According to the first and second aspects of the present invention, even if the substrate has an unstable horizontal posture, the liquid layer of the processing liquid having a thickness necessary for processing over the entire surface of the substrate is provided. Can be formed and held. Therefore, the processing can be suitably performed even on a large-sized substrate, and the yield can be improved. Further, according to the third aspect of the present invention, the liquid layer of the processing liquid can be effectively held with minimum contact.

【0052】また,請求項4に記載の発明によれば,請
求項1,2に記載の処理方法を好適に実施することがで
きる。特に請求項5に記載の発明によれば,請求項4の
処理装置において,処理液保持手段を容易に基板の表面
に供給された処理液に接触する位置に配置できる。
Further, according to the invention described in claim 4, the processing method described in claims 1 and 2 can be suitably implemented. In particular, according to the fifth aspect of the present invention, in the processing apparatus of the fourth aspect, the processing liquid holding means can be easily arranged at a position where the processing liquid holding means comes into contact with the processing liquid supplied to the surface of the substrate.

【0053】また,請求項6,7に記載の発明によれ
ば,基板を水平姿勢に保ち均一な処理液の液層が形成で
きるので,保持手段を基板に合わせた大きさ,形態にす
る必要がない。また,請求項8に記載の発明によれば,
既述したように最小限の接触によって処理液の液層を効
果的に保持することができる。また,請求項9に記載の
発明によれば,処理液の供給及び保持に必要な構成要素
を一つにまとめることができるので,処理装置が大型化
することがない。また,処理液保持手段と処理液の供給
手段の所定位置への移動時間を節約することができるの
で,処理時間を短縮しスループットの向上が図れる。
According to the sixth and seventh aspects of the present invention, the substrate can be maintained in a horizontal position and a uniform liquid layer of the processing liquid can be formed. There is no. According to the invention described in claim 8,
As described above, the liquid layer of the processing liquid can be effectively held by the minimum contact. According to the ninth aspect of the present invention, components necessary for supplying and holding the processing liquid can be combined into one, so that the processing apparatus does not become large. In addition, the time required to move the processing liquid holding means and the processing liquid supply means to predetermined positions can be saved, so that the processing time can be reduced and the throughput can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態にかかる現像装置を備えた
処理システムの斜視図である。
FIG. 1 is a perspective view of a processing system including a developing device according to an embodiment of the present invention.

【図2】本発明の実施の形態にかかる現像装置の断面図
である。
FIG. 2 is a cross-sectional view of the developing device according to the embodiment of the present invention.

【図3】本発明の実施の形態にかかる現像装置の平面図
である。
FIG. 3 is a plan view of the developing device according to the embodiment of the present invention.

【図4】現像液供給ノズルの下方からみた斜視図であ
る。
FIG. 4 is a perspective view of the developer supply nozzle as viewed from below.

【図5】現像液保持手段をLCD基板の表面に接触しな
い位置で,かつこのLCD基板の表面に供給された現像
液の液層と接触する位置に配置した様子を示す斜視図で
ある。
FIG. 5 is a perspective view showing a state where the developer holding means is arranged at a position not in contact with the surface of the LCD substrate and at a position in contact with a liquid layer of the developer supplied to the surface of the LCD substrate.

【図6】現像液保持手段をLCD基板の表面に接触しな
い位置で,かつこのLCD基板の表面に供給された現像
液の液層と接触する位置に配置した様子を側面から示し
た説明図である。
FIG. 6 is an explanatory side view showing a state in which the developer holding means is arranged at a position not in contact with the surface of the LCD substrate and at a position in contact with a liquid layer of the developer supplied to the surface of the LCD substrate; is there.

【図7】本発明の実施の形態にかかる処理工程を示すフ
ローチャートである。
FIG. 7 is a flowchart showing processing steps according to the embodiment of the present invention.

【図8】現像液保持手段にノズル機構を設けた場合の底
面からみた説明図である。
FIG. 8 is an explanatory diagram viewed from the bottom surface when a nozzle mechanism is provided in the developer holding means.

【図9】現像液保持手段の形状の他の例を示す斜視図で
ある。
FIG. 9 is a perspective view showing another example of the shape of the developer holding means.

【図10】現像液保持手段を支持ピンによって支持した
場合の側面からみた説明図である。
FIG. 10 is an explanatory diagram viewed from the side when the developer holding means is supported by a support pin.

【図11】従来の現像装置の問題点を示す説明図であ
る。
FIG. 11 is an explanatory diagram showing a problem of a conventional developing device.

【符号の説明】[Explanation of symbols]

1 塗布現像処理システム 18 現像装置 30 スピンチャック 31 処理容器 32 現像液供給ノズル 35 現像液保持手段 46 支持ピン 55 液層 60 吊り下げ部材 G LCD基板 DESCRIPTION OF SYMBOLS 1 Coating development processing system 18 Developing device 30 Spin chuck 31 Processing container 32 Developing solution supply nozzle 35 Developing solution holding means 46 Support pin 55 Liquid layer 60 Hanging member G LCD substrate

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 水平に保持した基板の表面に処理液を供
給して,当該基板に対して所定の処理を施す方法におい
て,基板を水平に保持する工程と,前記水平に保持され
た基板の表面に処理液を供給する工程と,前記基板の表
面の少なくとも周縁部において,前記基板の表面に接触
しない位置で,かつこの基板の表面に供給された処理液
と接触する位置に処理液保持手段を配置する工程とを有
することを特徴とする,処理方法。
In a method of supplying a processing liquid to a surface of a horizontally held substrate and performing a predetermined process on the substrate, a step of holding the substrate horizontally, and a step of holding the horizontally held substrate. A step of supplying a processing liquid to the surface; and a processing liquid holding unit at least at a peripheral portion of the surface of the substrate at a position not in contact with the surface of the substrate and at a position in contact with the processing liquid supplied to the surface of the substrate. And a step of disposing.
【請求項2】 水平に保持した基板の表面に処理液を供
給して,当該基板に対して所定の処理を施す方法におい
て,基板を水平に保持する工程と,前記基板の表面の少
なくとも周縁部において,前記基板の表面に接触しない
位置で,この基板に所定の間隔をあけて処理液保持手段
を配置する工程と前記処理液保持手段を配置した後に,
少なくともこの処理液保持手段と接触する厚さまで基板
の表面に処理液を供給する工程とを有することを特徴と
する,処理方法。
2. A method of supplying a processing liquid to a surface of a substrate held horizontally and performing a predetermined process on the substrate, the step of holding the substrate horizontally, and at least a peripheral portion of the surface of the substrate. A step of arranging the processing liquid holding means at a predetermined distance from the substrate at a position not in contact with the surface of the substrate, and after arranging the processing liquid holding means,
Supplying the processing liquid to the surface of the substrate at least to a thickness in contact with the processing liquid holding means.
【請求項3】 処理液保持手段は,メッシュ状であるこ
とを特徴とする,請求項1又は2に記載の処理方法。
3. The processing method according to claim 1, wherein the processing liquid holding means has a mesh shape.
【請求項4】 基板を水平に保持する保持手段と,前記
保持手段に保持された基板の表面に処理液を供給する供
給手段とを備えた処理装置であって,少なくとも前記基
板の表面周縁部における,前記基板の表面に接触しない
位置で,かつこの基板の表面に供給された処理液と接触
する位置に移動自在な,処理液保持手段を備えたことを
特徴とする,処理装置。
4. A processing apparatus comprising: holding means for holding a substrate horizontally; and supply means for supplying a processing liquid to a surface of the substrate held by the holding means, wherein at least a peripheral portion of the surface of the substrate is provided. A processing liquid holding means that is movable to a position not in contact with the surface of the substrate and to a position in contact with the processing liquid supplied to the surface of the substrate.
【請求項5】 処理液保持手段は,基板の表面上方で吊
下されるものであることを特徴とする,請求項4に記載
の処理装置。
5. The processing apparatus according to claim 4, wherein the processing liquid holding means is suspended above a surface of the substrate.
【請求項6】 基板周縁部を下方から支持する支持手段
を備え,処理液保持手段は,少なくとも基板を挟んでこ
の支持手段と対向する位置に配置自在であることを特徴
とする,請求項4に記載の処理装置。
6. The apparatus according to claim 4, further comprising support means for supporting the peripheral portion of the substrate from below, wherein the processing liquid holding means is arranged at least at a position facing the support means with the substrate interposed therebetween. A processing device according to claim 1.
【請求項7】 処理液保持手段は,当該支持手段に支持
されるものであることを特徴とする,請求項4又は6に
記載の処理装置。
7. The processing apparatus according to claim 4, wherein the processing liquid holding means is supported by the supporting means.
【請求項8】 処理液保持手段は,メッシュ状であるこ
とを特徴とする,請求項4,5,6又は7に記載の処理
装置。
8. The processing apparatus according to claim 4, wherein the processing liquid holding means has a mesh shape.
【請求項9】 処理液保持手段は,処理液を基板の表面
に供給するノズル機構を備えていることを特徴とする,
請求項4,5,6,7又は8に記載の処理装置。
9. The processing liquid holding means includes a nozzle mechanism for supplying a processing liquid to the surface of the substrate.
The processing device according to claim 4, 5, 6, 7, or 8.
JP33228997A 1997-11-18 1997-11-18 Processing method and processing apparatus Expired - Fee Related JP3686241B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33228997A JP3686241B2 (en) 1997-11-18 1997-11-18 Processing method and processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33228997A JP3686241B2 (en) 1997-11-18 1997-11-18 Processing method and processing apparatus

Publications (2)

Publication Number Publication Date
JPH11150064A true JPH11150064A (en) 1999-06-02
JP3686241B2 JP3686241B2 (en) 2005-08-24

Family

ID=18253300

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3686241B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086488A (en) * 2001-09-11 2003-03-20 Tokyo Electron Ltd Liquid treatment apparatus and method, and development processing system
KR100488753B1 (en) * 2001-07-23 2005-05-11 다이닛뽕스크린 세이조오 가부시키가이샤 Substrate treating method and apparatus
WO2005112077A1 (en) * 2004-05-18 2005-11-24 Tokyo Electron Limited Development apparatus and development method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100488753B1 (en) * 2001-07-23 2005-05-11 다이닛뽕스크린 세이조오 가부시키가이샤 Substrate treating method and apparatus
JP2003086488A (en) * 2001-09-11 2003-03-20 Tokyo Electron Ltd Liquid treatment apparatus and method, and development processing system
JP4718061B2 (en) * 2001-09-11 2011-07-06 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and development processing apparatus
WO2005112077A1 (en) * 2004-05-18 2005-11-24 Tokyo Electron Limited Development apparatus and development method
KR100843275B1 (en) * 2004-05-18 2008-07-03 도쿄엘렉트론가부시키가이샤 Development apparatus and development method
US7651284B2 (en) 2004-05-18 2010-01-26 Tokyo Electron Limited Development apparatus and development method

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