JPH11145136A - Wiring member and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance an adhesion of a ruthenium metallic film and to lower its resistance value, by adding a specific atomic % of oxygen, to ruthenium metal or an alloy composed mainly of ruthenium metal. SOLUTION: A MOSFET 10 is provided with a silicon substrate 11, and on it a field oxide film 12 and a gate oxide film 13 are formed. On this gate oxide film 13 a gate electrode 17 is formed with a drain 14, a source 15 and a ruthenium film 16 in a vacuum tank by a sputtering apparatus. If 0.01-0.1 atomic % of oxygen is added to a gas such as a neon gas, etc., in this sputtering, its resistance value decreases sharply compared to a case of no oxygen, and it becomes possible to reduce noise as well as to solve gain shortage, when the MOSFET 10 is used in a high frequency region. Besides, it becomes possible to increase the degree of bonding, and to enhance adhesion by adding oxygen.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a wiring member and a method of manufacturing the same, and more particularly, to a wiring member used for a semiconductor and a method of manufacturing the same.

[0002]

2. Description of the Related Art Generally, a metal film such as polysilicon, titanium silicide, molybdenum, a metal silicide film, or a laminated film thereof is used for a gate electrode wiring of a MOS transistor or the like.

The resistance of this metal film is 2 in polysilicon.
Although the resistance values are as low as about 00 μΩcm, about 15 μΩcm for titanium silicide, and about 12 μΩcm for molybdenum, there is a problem in that when these are used in a high frequency region, the gain becomes insufficient and the noise is increased.

In order to solve this problem, recently, a ruthenium metal film having a low resistance of about 8 μΩcm has been used.

However, this ruthenium metal film has a problem that it has poor adhesion and that if another gas is mixed during sputtering, the resistance becomes high.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a wiring member and a method of manufacturing the same in which the adhesion of the ruthenium metal film is enhanced and the resistance value is reduced.

[0007]

SUMMARY OF THE INVENTION The present invention relates to a ruthenium metal or an alloy containing ruthenium metal as a main component.
It is intended to provide a wiring member characterized by adding 0.1 to 0.1 atomic% of oxygen.

Further, the present invention provides a wiring member wherein a member obtained by adding 0.01 to 0.1 atomic% of oxygen to ruthenium metal or an alloy containing ruthenium metal as a main component is used as a semiconductor wiring member. Is what you do.

Further, the present invention targets ruthenium metal or an alloy containing ruthenium metal as a main component in an atmosphere in which at least one gas such as neon gas, argon gas, krypton gas, xenon gas or the like is used as a sputtering gas, and applies ruthenium to a substrate. In a method of manufacturing a wiring member for forming a film, a small amount of oxygen is added to a sputter gas and 0.01 to 0.1 atomic% of oxygen is added to a ruthenium film. To provide.

Further, according to the present invention, a semiconductor wiring member is formed by a member obtained by adding a small amount of oxygen to a sputtering gas and adding 0.01 to 0.1 atomic% of oxygen to a ruthenium film. It is intended to provide a manufacturing method.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A case where a wiring member and a method of manufacturing the same according to the present invention are applied to a MOSFET will be described below.

In general, a MOSFET 10 is provided with a silicon substrate 11 as shown in FIG. 1, on which a field oxide film 12 and a gate oxide film 13 constituting a MOSFET element are formed.

A gate electrode 17 formed by a drain 14, a source 15, and a ruthenium film 16 is formed on the gate oxide film 13, and an interlayer insulating film 1 is formed thereon.
8 is covered.

A contact hole is formed at a predetermined position of the interlayer insulating film 18, and a wiring 19 is formed by covering aluminum or the like.

To form a gate electrode 17 formed of a ruthenium film 16 on the gate oxide film 13, a sputtering apparatus 20 as shown in FIG. 2 is used.

The sputtering apparatus 20 has an anode 21
And a vacuum chamber 23 provided with a cathode 22.
The silicon substrate 11 on which the gate oxide film 13 is formed is attached to the anode 21 of the vacuum chamber 23, and ruthenium metal as the target member 24 is attached to the cathode 22.

A high-voltage power supply 25 is connected to the cathode 22 so that the evaporated ruthenium atoms are deposited on the gate oxide film 13 of the anode 21 to form the gate electrode 17 formed by the ruthenium film 16. ing.

Further, a gas mixture is connected to the vacuum chamber 23 by connecting a pipe 26 connected to a gas source (not shown) such as a neon gas, an argon gas, a krypton gas, a xenon gas, and a pipe 27 connected to an oxygen gas source (not shown). An adjuster 28 is provided, and oxygen gas is added to neon gas or the like, and this is mixed to form a sputter gas.

Further, the vacuum chamber 23 is provided with a connection pipe 29 connected to a vacuum pump (not shown) so as to evacuate the connection pipe 29.

To form the gate electrode 17, the silicon substrate 11 is attached to the anode 21, and ruthenium metal as the target member 24 is attached to the cathode 22. Next, the vacuum pump is driven to evacuate the vacuum chamber 23.

In the vacuum chamber 23, at least one gas such as neon gas or argon gas and 1 to
Oxygen gas added at a ratio of 5% by volume is mixed by a gas mixing controller 28 to generate sputter gas. The sputtering gas is charged into the vacuum chamber 23, and the internal pressure is set to 1 Pa,
Bring the internal temperature to 150 ° C.

Next, the high voltage power supply 25
Applying high kW of piezoelectric power to the ruthenium target member 24
Is sputtered. Ruthenium atoms generated from the target member 24 by this sputtering are converted into anode 2
The first gate oxide film 13 is deposited. Thus, a ruthenium metal film 16 is formed on the gate oxide film 13.

Although not shown, a silicon oxide film or a silicon nitride film is deposited on the ruthenium metal film 16. RIE is performed using this deposited film as an etching mask.
(REACTIVE ION ETCHING) to process the ruthenium metal film 16 into the gate electrode 17 or the gate electrode wiring.

In the above sputtering, the volume percentage of oxygen gas is set to 0%, 1% with respect to the gas volume of gas such as neon gas.
%, 2%, 3%..., The oxygen content of the gate electrode 17 formed on the ruthenium metal film 16 becomes 0%, 0.02%, 0.04% as shown in FIG. ,
0.06%...

As shown in FIG. 4, the resistivity of the gate electrode 17 having such an oxygen content is as follows.
% At 8.4 μΩcm, 0.01% at 7.9 μΩcm,
7.4 μΩcm at 0.05%, 7.2 μ at 0.06%
Ωcm, and 0.13% at 7.93 μΩcm.
At 15%, the resistance is 12 μΩcm, which is higher than that of the ruthenium metal film 16 containing no oxygen.

Therefore, oxygen is added to the gate electrode 17 by 0.0
When 1 atomic% to 0.1 atomic% is added, the resistance value is greatly reduced as compared with the case where there is no oxygen.
In the case where is used in a high-frequency region, not only the gain shortage can be solved but also the noise can be reduced.

Further, a peeling test was conducted on the degree of adhesion between the gate electrode 17 and the gate oxide film 13. This test was performed by attaching a cellophane tape to the gate electrode 17 and determining whether or not the ruthenium film 16 was peeled off when the cellophane tape was peeled off.

As a result, in the gate electrode 17 containing no oxygen, 23 out of 100 electrodes were peeled off, that is, 23/100. However, the addition of oxygen increased the degree of bonding and increased the adhesiveness, so the resistance was the lowest. In the gate electrode 17 to which 0.06% of oxygen was added, all of the 100 gate electrodes did not peel, that is, 0/100 was obtained.

Therefore, the adhesion of the gate electrode 17 formed of the ruthenium film 16 could be enhanced.

In the present invention, ruthenium metal is used as the target member 24, and this is sputtered in an atmosphere of a sputter gas to form the gate electrode 17. However, the target member 24 is not limited to ruthenium metal but contains ruthenium as a main component. Almost the same effect could be obtained even with the used alloy.

An example of a semiconductor is a MOSFET.
However, the semiconductor is not limited to this, and can be similarly used as a gate electrode such as a GTO (gate turn-off thyristor) and an IGBT (insulated bipolar transistor), and a gate electrode wiring material.

[0032]

According to the present invention, ruthenium metal or an alloy containing ruthenium metal as a main component is contained in an amount of 0.01 to 0.1 atomic%.
By adding oxygen, a wiring member having low resistance and high adhesion could be obtained.

Further, according to the present invention, a member obtained by adding 0.01 to 0.1 atomic% of oxygen to ruthenium metal or an alloy containing ruthenium metal as a main component is used as a semiconductor gate electrode and a gate electrode wiring member. Thus, there was no shortage of gain, and an increase in noise was suppressed.

Further, the present invention targets ruthenium metal or an alloy containing ruthenium metal as a main component in an atmosphere in which at least one gas such as neon gas, argon gas, krypton gas, xenon gas or the like is used as a sputtering gas. In the method of manufacturing a wiring member for forming a film, a small amount of oxygen is added to a sputter gas, and 0.01 to 0.1 atomic% of oxygen gas is added to a ruthenium film. And a film with high yield and good yield could be manufactured in a short time.

Further, according to the present invention, since a semiconductor electrode wiring and the like are formed by using a member obtained by adding a small amount of oxygen to a sputtering gas and adding 0.01 to 0.1 atomic% of oxygen to a ruthenium film, the film can be thinned. The processing accuracy of was improved.

[Brief description of the drawings]

FIG. 1 is a MOSFET using a ruthenium film of the present invention.
Sectional drawing which shows the outline | summary of FIG.

FIG. 2 is an explanatory view showing an outline of a sputtering apparatus of the present invention.

FIG. 3 is an explanatory diagram showing characteristics of a ruthenium metal film of the present invention.

FIG. 4 is an explanatory view showing other characteristics of the ruthenium metal film of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 MOSFET 11 Silicon substrate 12 Field oxide film 13 Gate oxide film 14 Drain 15 Source 16 Ruthenium film 17 Gate electrode 18 Interlayer insulating film 20 Sputtering device 21 Anode 22 Cathode 23 Vacuum tank 24 Target member 25 High voltage power supply 28 Gas mixing regulator 29 Connection pipe

Claims (4)

[Claims] 1. A wiring member characterized by adding 0.01 to 0.1 atomic% of oxygen to ruthenium metal or an alloy containing ruthenium metal as a main component. 2. A wiring member wherein a member obtained by adding 0.01 to 0.1 atomic% of oxygen to ruthenium metal or an alloy containing ruthenium metal as a main component is used as a semiconductor wiring member. 3. A ruthenium film is formed on a substrate by using ruthenium metal or an alloy mainly containing ruthenium metal as a target in an atmosphere in which at least one gas such as neon gas, argon gas, krypton gas, and xenon gas is used as a sputtering gas. In a method for manufacturing a wiring member, a small amount of oxygen is
A method for manufacturing a wiring member, comprising adding 1 to 0.1 atomic% of oxygen. 4. The wiring according to claim 3, wherein the semiconductor wiring member is formed by a member obtained by adding a small amount of oxygen to the sputtering gas and adding 0.01 to 0.1 atomic% of oxygen to the ruthenium film. Manufacturing method of the member.