JPH11139877A - Heat insulating silicon nitride-base sintered compact and its production - Google Patents
Heat insulating silicon nitride-base sintered compact and its productionInfo
- Publication number
- JPH11139877A JPH11139877A JP9304375A JP30437597A JPH11139877A JP H11139877 A JPH11139877 A JP H11139877A JP 9304375 A JP9304375 A JP 9304375A JP 30437597 A JP30437597 A JP 30437597A JP H11139877 A JPH11139877 A JP H11139877A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- sintered body
- less
- average particle
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、自動車部品などの
機械構造部材等として有用であり、公知の窒化ケイ素焼
結体に比べて熱伝導率が低く、断熱性に優れている窒化
ケイ素系焼結体、及びその製造方法に関する。The present invention is useful as a mechanical structural member of an automobile part or the like, and has a lower thermal conductivity than a known silicon nitride sintered body and excellent heat insulating properties. The present invention relates to a binder and a method for manufacturing the same.
【0002】[0002]
【従来の技術】窒化ケイ素(Si3N4)は、強度、破壊
靭性値、耐食性、耐摩耗性、耐熱衝撃性、耐酸化性等に
おいてバランスの取れた材料であるため、切削工具から
エンジン部品等の広い範囲で利用されている。特に最近
では、自動車エンジンやガスタービン等の構造用材料と
して注目を集めている。2. Description of the Related Art Silicon nitride (Si 3 N 4 ) is a material that is balanced in strength, fracture toughness, corrosion resistance, abrasion resistance, thermal shock resistance, oxidation resistance, and the like. Etc. are used in a wide range. In particular, recently, it has attracted attention as a structural material for automobile engines and gas turbines.
【0003】特に緻密質のセラミックスとしては、窒化
ケイ素焼結体は耐熱衝撃性が高いため、耐熱材料として
も有用である。しかし、窒化ケイ素は熱伝導率が20W
/mK程度と比較的高いため、断熱性が要求される部品
としては必ずしも適切とは言えなかった。In particular, as a dense ceramic, a silicon nitride sintered body has a high thermal shock resistance, and is therefore useful as a heat resistant material. However, silicon nitride has a thermal conductivity of 20 W
/ MK, which is relatively high, so that it was not necessarily suitable as a component requiring heat insulation.
【0004】断熱性セラミックス材料としては、従来か
ら熱伝導率が低い酸化ジルコニウムが一般に用いられて
いるが、耐熱衝撃性に劣るため、信頼性が低いという問
題があった。また、多孔質セラミックスは断熱性と耐熱
衝撃性の両方に優れているが、気密性が得られないため
又は強度耐久性が低いため、構造用材料としては信頼性
が低いとされていた。As a heat insulating ceramic material, zirconium oxide having a low thermal conductivity has been generally used, but has a problem that its reliability is low due to poor thermal shock resistance. Further, porous ceramics are excellent in both heat insulating properties and thermal shock resistance, but are considered to have low reliability as structural materials because they cannot provide airtightness or have low strength durability.
【0005】[0005]
【発明が解決しようとする課題】上記のごとく、自動車
エンジン等の構造用材料として断熱性に優れたセラミッ
クス材料が要望されているが、現状では断熱性があり且
つ耐熱衝撃性に優れたセラミックス材料が無く、結果と
して熱効率が低いか或は信頼性の低い部材又は機器を用
いざるを得ない場合が多かった。As described above, a ceramic material having excellent heat insulating properties is demanded as a structural material for an automobile engine or the like, but at present, a ceramic material having heat insulating properties and excellent thermal shock resistance is required. As a result, in many cases, a member or equipment having low thermal efficiency or low reliability has to be used.
【0006】本発明は、かかる従来の事情に鑑み、断熱
性に優れると共に、耐熱衝撃性が高く、しかも緻密質で
耐久性にも優れた窒化ケイ素系焼結体、及びその製造方
法を提供することを目的とする。In view of the above circumstances, the present invention provides a silicon nitride-based sintered body which is excellent in heat insulation, has high thermal shock resistance, is dense, and has excellent durability, and a method for producing the same. The purpose is to:
【0007】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明が提供する断熱性窒化ケイ素系焼結体は、平
均粒径が100nm以下の窒化ケイ素を主成分とし、分
散粒子としてチタン化合物を含み、熱伝導率が5W/m
K以下であることを特徴とする。また、この断熱性窒化
ケイ素系焼結体は、水中急冷法により測定した耐熱衝撃
性が600℃以上であることが好ましい。In order to achieve the above object, a heat-insulating silicon nitride-based sintered body provided by the present invention comprises a silicon compound having an average particle diameter of 100 nm or less as a main component, and a titanium compound as a dispersed particle. And a thermal conductivity of 5 W / m
K or less. Further, the heat-insulating silicon nitride-based sintered body preferably has a thermal shock resistance of 600 ° C. or higher as measured by a quenching method in water.
【0008】本発明の熱伝導率が5W/mK以下である
断熱性窒化ケイ素系焼結体の製造方法は、窒化ケイ素粉
末と金属チタン粉末をメカニカルアロイング法で窒化ケ
イ素の平均粒径が50nm以下になるまで混合粉砕し、
得られた複合粉末を窒化ケイ素の平均粒径が100nm
以下で且つ相対密度が93%以上まで緻密化焼結するこ
とを特徴とする。According to the method of the present invention for producing a heat-insulating silicon nitride sintered body having a thermal conductivity of 5 W / mK or less, a silicon nitride powder and a metal titanium powder are subjected to mechanical alloying so that the average particle size of silicon nitride is 50 nm. Mix and crush until it is less than
The average particle diameter of silicon nitride was 100 nm.
Or less and the relative density is 93% or more.
【0009】[0009]
【発明の実施の形態】本発明の窒化ケイ素系焼結体は、
平均粒径が100nm以下の結晶粒で構成される窒化ケ
イ素からなる。また同時に、窒化ケイ素の平均粒径を1
00nm以下に制御することで、窒化ケイ素系焼結体の
熱伝導率を5W/mK以下とすることが可能となった。
尚、構造用セラミックス材料としては、熱伝導率を5W
/mK以下とすることで多くの場合に必要な断熱性を確
保でき、断熱部材又は断熱機器として熱効率の改善を図
ることができる。BEST MODE FOR CARRYING OUT THE INVENTION The silicon nitride based sintered body of the present invention
It is made of silicon nitride composed of crystal grains having an average particle size of 100 nm or less. At the same time, the average particle size of silicon nitride is 1
By controlling the thickness to be equal to or less than 00 nm, the thermal conductivity of the silicon nitride-based sintered body can be reduced to 5 W / mK or less.
The structural ceramic material has a thermal conductivity of 5 W.
By setting it to / mK or less, the heat insulation required in many cases can be secured, and the thermal efficiency can be improved as a heat insulating member or a heat insulating device.
【0010】窒化ケイ素の平均粒径が100nmを越え
ると熱伝導率が高くなり、必要な断熱性を得ることが困
難となる。その場合でも熱伝導率を10W/mK以下に
抑えるためには、焼結体の気孔率を高くするか又は熱伝
導率の低いガラス成分などの添加物を多く加える必要が
でてくる。これらの方法は何れも、窒化ケイ素焼結体本
来の耐熱衝撃性を低下させたり、耐摩耗性や機械強度等
の特性を低下させることとなるので、避けるべきであ
る。When the average particle size of silicon nitride exceeds 100 nm, the thermal conductivity increases, and it becomes difficult to obtain necessary heat insulating properties. Even in such a case, in order to suppress the thermal conductivity to 10 W / mK or less, it is necessary to increase the porosity of the sintered body or add a large amount of additives such as a glass component having a low thermal conductivity. All of these methods should be avoided because they will lower the thermal shock resistance inherent in the silicon nitride sintered body, and will also reduce properties such as wear resistance and mechanical strength.
【0011】窒化ケイ素の平均粒径を100nm以下に
制御するには、後述するように窒化ケイ素と金属チタン
との複合粉末を用いて焼結体を製造する。これにより、
金属チタンが焼結と同時に結晶核となって微細な窒化ケ
イ素粒子が析出すると共に、微細なチタン窒化物として
窒化ケイ素粒子の回りに析出して、焼結過程での窒化ケ
イ素の粒成長を抑制することができる。焼結体中のチタ
ン量としては、窒化ケイ素に対して5重量%未満では焼
結時に微細結晶粒として析出せず、また50重量%を越
えると焼結体の強度や熱衝撃性が低下するので、5〜5
0重量%の範囲とすることが好ましい。In order to control the average particle size of silicon nitride to 100 nm or less, a sintered body is manufactured using a composite powder of silicon nitride and metallic titanium as described later. This allows
Metal titanium becomes crystal nuclei at the same time as sintering, and fine silicon nitride particles precipitate, and fine titanium nitride precipitates around silicon nitride particles, suppressing the growth of silicon nitride grains during the sintering process. can do. If the amount of titanium in the sintered body is less than 5% by weight with respect to silicon nitride, it does not precipitate as fine crystal grains during sintering, and if it exceeds 50% by weight, the strength and thermal shock resistance of the sintered body decrease. So 5-5
It is preferred to be in the range of 0% by weight.
【0012】また、本発明の断熱性窒化ケイ素系焼結体
は、窒化ケイ素本来の優れた耐熱衝撃性を維持できる。
耐熱衝撃性は、高いほど部品とした場合の信頼性に優れ
ているが、加熱した焼結体を水中に投入して強度変化を
調べる水中急冷法で測定したときの耐熱衝撃性が600
℃以上であれば、実用上において何ら問題が無い。例え
ば1000℃にさらされる耐熱セラミックス部品であっ
ても、水中急冷法で600℃加熱に耐えられれば、熱衝
撃による問題は起こらないことが明らかになっている。Further, the heat-insulating silicon nitride-based sintered body of the present invention can maintain excellent thermal shock resistance inherent in silicon nitride.
The higher the thermal shock resistance, the higher the reliability in the case of a component, but the thermal shock resistance when measured by the underwater quenching method, in which a heated sintered body is put into water and the change in strength is examined, is 600.
If the temperature is at least ° C, there is no practical problem. For example, it has been clarified that even a heat-resistant ceramic part exposed to 1000 ° C. does not cause a problem due to thermal shock if it can withstand heating at 600 ° C. by a quenching method in water.
【0013】上記本発明の窒化ケイ素系焼結体を製造す
るには、窒化ケイ素粉末と金属チタン粉末とをメカニカ
ルアロイング法により混合粉砕し、窒化ケイ素粒子の平
均粒径が50nm以下の複合粉末とする。窒化ケイ素粒
子の平均粒径が50nmを越えると、焼結後の窒化ケイ
素の結晶粒径を100nm以下とすることが難しく、緻
密化も困難である。尚、上記50nm以下の平均粒径を
得るためには、混合時の加速度を50〜200Gの範囲
とすることが好ましい。In order to produce the silicon nitride-based sintered body of the present invention, a silicon nitride powder and a metal titanium powder are mixed and pulverized by a mechanical alloying method to obtain a composite powder having an average particle diameter of silicon nitride particles of 50 nm or less. And When the average particle size of the silicon nitride particles exceeds 50 nm, it is difficult to reduce the crystal particle size of the silicon nitride after sintering to 100 nm or less, and it is also difficult to make the silicon nitride compact. In order to obtain the average particle diameter of 50 nm or less, it is preferable that the acceleration during mixing be in the range of 50 to 200 G.
【0014】次に、複合粉末は窒素雰囲気中にて焼結
し、窒化ケイ素の平均粒径が100nm以下で且つ相対
密度が93%以上となるように緻密化する。この焼結の
際に、前記したように金属チタンが窒化物に変化して析
出し、窒化ケイ素の粒成長を抑制する。窒化ケイ素の平
均粒径が100nmを越えると、焼結体の熱伝導率を5
W/mK以下とすることが難しく、また水中急冷法によ
る耐熱衝撃性が600℃以上の焼結体を得ることも困難
となる。Next, the composite powder is sintered in a nitrogen atmosphere and densified so that the average particle size of silicon nitride is 100 nm or less and the relative density is 93% or more. At the time of this sintering, as described above, metallic titanium changes into nitride and precipitates, thereby suppressing grain growth of silicon nitride. When the average particle size of silicon nitride exceeds 100 nm, the thermal conductivity of the sintered body is reduced by 5%.
W / mK or less is difficult, and it is also difficult to obtain a sintered body having a thermal shock resistance of 600 ° C. or more by a quenching method in water.
【0015】[0015]
【実施例】平均粒径0.3μmのα型Si3N4粉末に、
焼結助剤としてAl203とY203をそれぞれ1重量%添
加し、更に下記表1に示す量の平均粒径5.0μmの金
属Ti粉末を添加して、ZrO2製ライニングしたポッ
トとZrO2製ボールを用いたボールミルにより、表1
に示す混合条件で混合粉砕を行った。得られた各複合粉
末について、TEMを用いてSi3N4粒子の粒径を評価
し、その平均粒径を表1に示した。次に、各複合粉末を
1気圧の窒素雰囲気中にて表1に示す焼結温度で加圧焼
結し、緻密化した。EXAMPLE An α-type Si 3 N 4 powder having an average particle size of 0.3 μm was
Al 2 O 3 and Y 2 O 3 were added as a sintering aid in an amount of 1% by weight, respectively, and a metal Ti powder having an average particle size of 5.0 μm in an amount shown in Table 1 below was added, followed by ZrO 2 lining. Table 1 shows the results of a ball mill using a pot and ZrO 2 balls.
Under the mixing conditions shown in Table 1. For each of the obtained composite powders, the particle size of the Si 3 N 4 particles was evaluated using TEM, and the average particle size is shown in Table 1. Next, each composite powder was sintered under pressure at a sintering temperature shown in Table 1 in a nitrogen atmosphere at 1 atm, thereby densifying.
【0016】[0016]
【表1】 Ti量 ボールミル混合条件 複合粉末 焼結温度試料 (wt%) 加速度(G) 時間(hr) Si3N4(nm) (℃) 1* − 120 6 200 1400 2 5 120 6 40 1400 3 20 120 6 10 1400 4 50 120 6 10 1400 5 70 120 6 60 1400 6* 20 2 4 400 1600 7 20 50 8 10 1300 8* 20 150 4 10 1900 9* 20 100 8 15 1700 10* 20 100 8 15 1200 (注)表中の*を付した試料は比較例である。[Table 1] Ti content Ball mill mixing conditions Composite powder Sintering temperature sample (wt%) Acceleration (G) Time (hr) Si 3 N 4 (nm) (° C) 1 *-120 6 200 1400 2 5 120 6 40 1400 3 20 120 6 10 1400 4 50 120 6 10 1400 5 70 120 6 60 1400 6 * 20 2 4 400 1600 7 20 50 8 10 1300 8 * 20 150 4 10 1900 9 * 20 100 8 15 1700 10 * 20 100 8 15 1200 (Note) Samples marked with * in the table are comparative examples.
【0017】得られた各Si3N4焼結体について、イオ
ンエッチングで薄膜試片を作製し、透過型電子顕微鏡を
用いて母相のSi3N4素粒子の平均粒径を評価した。ま
た、各Si3N4焼結体の相対密度、熱伝導率、水中急冷
法による耐熱衝撃性をそれぞれ評価し、その結果を下記
表2にまとめて示した。For each of the obtained Si 3 N 4 sintered bodies, a thin film specimen was prepared by ion etching, and the average particle size of the Si 3 N 4 elementary particles in the matrix was evaluated using a transmission electron microscope. In addition, the relative density, thermal conductivity, and thermal shock resistance of the underwater quenching method of each Si 3 N 4 sintered body were evaluated, and the results are shown in Table 2 below.
【0018】[0018]
【表2】 (注)表中の*を付した試料は比較例である。[Table 2] (Note) Samples marked with * in the table are comparative examples.
【0019】上記の結果から分かるように、比較例の試
料1はTi粉末の添加がないため、試料6は複合粉末の
Si3N4粒径が大きいため、試料8と9は焼結温度が高
いため、いずれも焼結体中のSi3N4の粒径が大きくな
り、熱伝導率が10W/mK以上となっている。また、
比較例の試料10は、焼結温度が低いために焼結体密度
が低下し、且つ耐熱衝撃性も若干低下している。As can be seen from the above results, the sample 1 of the comparative example has no added Ti powder, the sample 6 has a large Si 3 N 4 particle size of the composite powder, and the samples 8 and 9 have a sintering temperature of Since they are high, the grain size of Si 3 N 4 in each sintered body is large, and the thermal conductivity is 10 W / mK or more. Also,
Sample 10 of the comparative example has a low sintering temperature, so that the density of the sintered body has decreased, and the thermal shock resistance has also slightly decreased.
【0020】一方、本発明の各試料は、焼結体中のSi
3N4の平均粒径が100nm以下と微細であり、いずれ
も5W/mK以下の熱伝導率を示すと共に、耐熱衝撃性
にも優れている。しかしながら、試料5では、添加した
金属Ti量が多く、また複合粉末中のSi3N4粒子の粒
径もやや大きいので、最終的な焼結体の耐熱衝撃性が若
干低下している。On the other hand, each sample of the present invention is obtained by
3 The average particle size of N 4 is less and fine 100 nm, both with showing the following thermal conductivity of 5W / mK, and is excellent in thermal shock resistance. However, in Sample 5, the amount of added metallic Ti was large, and the particle size of the Si 3 N 4 particles in the composite powder was slightly large, so that the thermal shock resistance of the final sintered body was slightly reduced.
【0021】[0021]
【発明の効果】本発明によれば、自動車エンジン等の構
造用断熱性セラミックス材料として要求される低い熱伝
導率を有し、しかも耐熱衝撃性が高く、緻密質で耐久性
にも優れた窒化ケイ素系焼結体を提供することができ
る。According to the present invention, a nitride having a low thermal conductivity required as a heat insulating ceramic material for a structure such as an automobile engine, a high thermal shock resistance, a dense structure and an excellent durability. A silicon-based sintered body can be provided.
Claims (3)
を主成分とし、分散粒子としてチタン化合物を含み、熱
伝導率が5W/mK以下であることを特徴とする断熱性
窒化ケイ素系焼結体。1. A heat-insulating silicon nitride-based sintered body comprising silicon nitride having an average particle diameter of 100 nm or less as a main component, a titanium compound as dispersed particles, and a thermal conductivity of 5 W / mK or less. .
以上であることを特徴とする、請求項1に記載の断熱性
窒化ケイ素系焼結体。2. The thermal shock resistance by quenching in water is 600 ° C.
The heat-insulating silicon nitride-based sintered body according to claim 1, wherein:
ニカルアロイング法で窒化ケイ素の平均粒径が50nm
以下になるまで混合粉砕し、得られた複合粉末を窒化ケ
イ素の平均粒径が100nm以下で且つ相対密度が93
%以上まで緻密化焼結することを特徴とする、熱伝導率
が5W/mK以下の断熱性窒化ケイ素系焼結体の製造方
法。3. An average particle size of silicon nitride of 50 nm is obtained by mechanically alloying silicon nitride powder and metal titanium powder.
The resulting composite powder was mixed and pulverized until the average particle size of silicon nitride was 100 nm or less and the relative density was 93% or less.
%. A method for producing a heat-insulating silicon nitride-based sintered body having a thermal conductivity of 5 W / mK or less, wherein the sintered body is densified and sintered to at least 5%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9304375A JPH11139877A (en) | 1997-11-06 | 1997-11-06 | Heat insulating silicon nitride-base sintered compact and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9304375A JPH11139877A (en) | 1997-11-06 | 1997-11-06 | Heat insulating silicon nitride-base sintered compact and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11139877A true JPH11139877A (en) | 1999-05-25 |
Family
ID=17932271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9304375A Pending JPH11139877A (en) | 1997-11-06 | 1997-11-06 | Heat insulating silicon nitride-base sintered compact and its production |
Country Status (1)
Country | Link |
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JP (1) | JPH11139877A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002057197A1 (en) * | 2001-01-22 | 2002-07-25 | Sumitomo Electric Industries, Ltd. | Electroconductive silicon nitride based composite sintered body and method for preparation thereof |
US6911162B2 (en) * | 2002-01-30 | 2005-06-28 | Sumitomo Electric Industries, Ltd. | Conductive silicon nitride composite sintered body and a process for the production thereof |
US7638200B2 (en) * | 2002-09-13 | 2009-12-29 | Tosoh Smd, Inc. | Process for making dense mixed metal Si3N4 targets |
-
1997
- 1997-11-06 JP JP9304375A patent/JPH11139877A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002057197A1 (en) * | 2001-01-22 | 2002-07-25 | Sumitomo Electric Industries, Ltd. | Electroconductive silicon nitride based composite sintered body and method for preparation thereof |
US7132061B2 (en) | 2001-01-22 | 2006-11-07 | Sumitomo Electric Industries, Ltd. | Electroconductive silicon nitride based composite sintered body and method for preparation thereof |
US6911162B2 (en) * | 2002-01-30 | 2005-06-28 | Sumitomo Electric Industries, Ltd. | Conductive silicon nitride composite sintered body and a process for the production thereof |
US7638200B2 (en) * | 2002-09-13 | 2009-12-29 | Tosoh Smd, Inc. | Process for making dense mixed metal Si3N4 targets |
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