JPH1112436A - Epoxy resin composition for sealing semiconductor and semiconductor device made by using it - Google Patents

Epoxy resin composition for sealing semiconductor and semiconductor device made by using it

Info

Publication number
JPH1112436A
JPH1112436A JP16544097A JP16544097A JPH1112436A JP H1112436 A JPH1112436 A JP H1112436A JP 16544097 A JP16544097 A JP 16544097A JP 16544097 A JP16544097 A JP 16544097A JP H1112436 A JPH1112436 A JP H1112436A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin composition
inorganic filler
semiconductor
zinc molybdate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16544097A
Other languages
Japanese (ja)
Other versions
JP3858353B2 (en
Inventor
Masanobu Fujii
昌信 藤井
Akihiko Sato
愛彦 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP16544097A priority Critical patent/JP3858353B2/en
Publication of JPH1112436A publication Critical patent/JPH1112436A/en
Application granted granted Critical
Publication of JP3858353B2 publication Critical patent/JP3858353B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a composition which contains neither a brominated flame retardant nor an antimony compound and is excellent in moldability, reliability and flame retardancy by blending an epoxy resin, a curing agent, a specified amount of an inorganic filler, and a flame retardant comprising a specified amount of zinc molybdate as the essential constituents. SOLUTION: An epoxy resin, a curing agent, zinc molybdate, and an inorganic filler are used as the essential constituents, wherein the content of an inorganic filler is 70-95 wt.% based on the total composition. A biphenyl type epoxy resin is preferably used in particular as the epoxy resin, although an o-cresol novolak type, a biphenyl type, a dicyclo type, etc., can be used alone or together, without limitation particularly. The curing agent used preferably comprises a paraxylylene-modified phenolic resin in particular. The content of zinc molybdate is preferably 0.05-10.0 wt.% based on the total composition. The inorganic filler used preferably comprises a spherical fused silica in particular.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、難燃性、成形性、
信頼性に優れた封止材及びそれを用いた半導体装置に関
する。
The present invention relates to flame retardancy, moldability,
The present invention relates to a sealing material excellent in reliability and a semiconductor device using the same.

【0002】[0002]

【従来の技術】半導体素子の封止は、生産性、コスト等
の面から樹脂封止が主流となっている。この封止用樹脂
は、電気的特性、コスト、作業性等に優れるエポキシ樹
脂組成物が主に用いられている。しかし、エポキシ樹脂
は、難燃性が不充分なので通常臭素化エポキシ樹脂を添
加して難燃性を向上させている。また、臭素系難燃剤と
相乗効果のあるアンチモン化合物(三酸化アンチモン、
五酸化アンチモン等)を併用している。近年環境保護の
観点から、燃焼時にダイオキシンの生成が疑われる臭素
系難燃剤、及び発癌性の可能性が指摘されているアンチ
モン化合物に対する使用規制の要求が強まりつつある。
この要求に対し、種々の代替難燃剤が検討されてきた。
例えば、水酸化アルミニウム、水酸化マグネシウム等の
金属水和物は、充分な難燃性を発揮させるためには多量
に添加せねばならず、樹脂組成物の硬化性、強度等の劣
化を招いてしまう。また、燐酸エステル系難燃剤(窒素
との併用も含む)も種々の製品が提案されているが、成
形性、信頼性において半導体封止用途の要求に堪えるも
のはない。
2. Description of the Related Art Resin encapsulation is mainly used for encapsulating semiconductor devices in terms of productivity and cost. As this sealing resin, an epoxy resin composition excellent in electrical characteristics, cost, workability and the like is mainly used. However, since epoxy resins have insufficient flame retardancy, brominated epoxy resins are usually added to improve flame retardancy. In addition, antimony compounds that have a synergistic effect with brominated flame retardants (antimony trioxide,
Antimony pentoxide). In recent years, from the viewpoint of environmental protection, the use of brominated flame retardants suspected of producing dioxins during combustion and antimony compounds, which have been pointed out as having carcinogenic potential, have been increasingly demanded.
To meet this demand, various alternative flame retardants have been studied.
For example, metal hydrates such as aluminum hydroxide and magnesium hydroxide must be added in large amounts in order to exhibit sufficient flame retardancy, resulting in deterioration of the curability, strength, etc. of the resin composition. I will. Various products have also been proposed for a phosphoric ester-based flame retardant (including the combined use with nitrogen), but none of them can meet the demands for semiconductor encapsulation in terms of moldability and reliability.

【0003】[0003]

【発明が解決しようとする課題】本発明は、臭素系難燃
剤やアンチモン化合物を含有しない、成形性、信頼性、
難燃性に優れた半導体封止用エポキシ樹脂組成物及びそ
れを用いた半導体装置を提供することを目的とする。
DISCLOSURE OF THE INVENTION The present invention provides a moldable, reliable, non-containing brominated flame retardant and antimony compound.
An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation excellent in flame retardancy and a semiconductor device using the same.

【0004】[0004]

【課題を解決するための手段】すなわち本発明は、エポ
キシ樹脂、フェノール硬化剤及び無機充填材を主成分と
する封止材において、難燃剤としてモリブデン酸亜鉛を
必須成分として配合し、且つ臭素系難燃剤、アンチモン
化合物を含有しない半導体封止用エポキシ樹脂組成物及
びそれを用いた半導体装置に関する。これまでにもモリ
ブデン酸亜鉛は、塩化ビニル等の発煙抑制剤として知ら
れている。しかし、これらはその他の難燃剤(特に臭素
系難燃剤)の助剤あるいは発煙抑制剤としてであり、モ
リブデン酸亜鉛単独でUL94 V−0を達成した例は
報告されていない。本発明者らは鋭意検討を重ねた結
果、驚くべきことに上記組成にて製造されたエポキシ樹
脂組成物は難燃剤として少量のモリブデン酸亜鉛を添加
するだけで、UL94 V−0を達成することを発見
し、本発明を完成した。以下、詳細について説明する。
That is, the present invention relates to a sealing material containing an epoxy resin, a phenol curing agent and an inorganic filler as main components, wherein zinc molybdate is blended as a flame retardant as an essential component, and a bromine-based compound is used. The present invention relates to an epoxy resin composition for semiconductor encapsulation containing no flame retardant or antimony compound, and a semiconductor device using the same. Heretofore, zinc molybdate has been known as a smoke suppressant such as vinyl chloride. However, these are auxiliary agents for other flame retardants (especially brominated flame retardants) or as smoke suppressants, and there is no report that zinc molybdate alone achieves UL94 V-0. The present inventors have made intensive studies and surprisingly found that the epoxy resin composition produced with the above composition achieves UL94 V-0 only by adding a small amount of zinc molybdate as a flame retardant. And completed the present invention. Hereinafter, the details will be described.

【0005】[0005]

【発明の実施の形態】本発明で用いられるエポキシ樹脂
としては、特に制限はないが、オルソクレゾールノボラ
ック型、ビフェニル型、ジシクロ型等を単独または併用
して用いることができるが、特にビフェニル型が好適で
ある。硬化剤としては、特に制限はないが、フェノール
ノボラック型、アラルキル型(パラキシリレン変性フェ
ノール樹脂)、テルペン型等を単独又は併用して用いる
ことができるが、特にアラルキル型が好適である。硬化
促進剤としては、特に制限はないが、テトラフェニルホ
スホニウム−テトラフェニルボレード、トリフェニルホ
スフィン、トリフェニルホスフィンとベンゾキノンの付
加物、1,8−ジアザ−ビシクロ(5,4,0)−ウン
デセン−7,2−フェニル−4メチル−イミダゾール、
トリフェニルホスホニウム−トリフェニルボラン等を単
独又は併用して用いることができるが、特にトリフェニ
ルホスフィンとベンゾキノンの付加物が好適である。カ
ップリング剤は、特に制限はないが、エポキシシランが
好適に用いられる。離型剤は、特に制限はないが、高級
脂肪酸例えばカルナバワックス等とポリエチレン系ワッ
クスを単独又は併用して用いることができるが、特に併
用が好適である。無機充填材は、70〜95wt%配合
され、充填材形状は球状又は破砕状であり、溶融シリ
カ、結晶シリカ、アルミナ等を単独及び併用して用いる
ことができる。特に、球状溶融シリカが好適である。充
填材量が70重量%以下では、難燃性が低下するし、9
5重量%以上では、流動性に問題が出易い。特に85〜
95重量%の範囲が好適である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention is not particularly limited, and orthocresol novolak type, biphenyl type, dicyclo type and the like can be used alone or in combination. It is suitable. The curing agent is not particularly limited, and a phenol novolak type, an aralkyl type (paraxylylene-modified phenolic resin), a terpene type, or the like can be used alone or in combination, and an aralkyl type is particularly preferable. The curing accelerator is not particularly limited, but may be tetraphenylphosphonium-tetraphenylborate, triphenylphosphine, an adduct of triphenylphosphine and benzoquinone, 1,8-diaza-bicyclo (5,4,0) -undecene. -7,2-phenyl-4methyl-imidazole,
Triphenylphosphonium-triphenylborane or the like can be used alone or in combination, but an adduct of triphenylphosphine and benzoquinone is particularly preferred. The coupling agent is not particularly limited, but epoxy silane is preferably used. The release agent is not particularly limited, but a higher fatty acid such as carnauba wax or the like and a polyethylene wax can be used alone or in combination, and the combination is particularly preferable. The inorganic filler is blended in an amount of 70 to 95% by weight, and the shape of the filler is spherical or crushed, and fused silica, crystalline silica, alumina or the like can be used alone or in combination. In particular, spherical fused silica is preferred. When the amount of the filler is 70% by weight or less, the flame retardancy decreases, and
If the content is 5% by weight or more, a problem tends to occur in fluidity. Especially 85-
A range of 95% by weight is preferred.

【0006】難燃剤としては、モリブデン酸亜鉛を用い
る。好ましくは酸化マグネシウム、酸化珪素等の核にモ
リブデン酸亜鉛を被覆したものを用いる。樹脂組成物中
のモリブデン酸亜鉛の含有量としては、0.05〜1
0.0重量%が好ましい。0.05%よりも少なければ
難燃性が不足するし、10.0%よりも多ければ成形性
に問題が出易い。特に0.1〜5.0%の範囲が好適に
用いられる。タルクにモリブデン酸亜鉛を被覆した難燃
剤としては、SHERWIN−WILLAMS社のKE
MGARD911等が容易に入手可能である。
[0006] As the flame retardant, zinc molybdate is used. Preferably, a core of magnesium oxide, silicon oxide, or the like coated with zinc molybdate is used. The content of zinc molybdate in the resin composition is 0.05 to 1
0.0% by weight is preferred. If it is less than 0.05%, the flame retardancy is insufficient, and if it is more than 10.0%, there is a problem in formability. In particular, the range of 0.1 to 5.0% is suitably used. Examples of the flame retardant obtained by coating talc with zinc molybdate include KE of SHERWIN-WILLAMS.
MGARD911 and the like are readily available.

【0007】その他の添加物として、着色剤(カーボン
ブラック等)、改質剤(シリコーン、シリコーンゴム
等)、イオントラッパー(ハイドロタルサイト、アンチ
モン−ビスマス等)を用いることができる。以上のよう
な原材料を用いて、成形材料を作製する一般的な方法と
しては、所定の配合量の原材料混合物をミキサー等によ
って充分混合した後、熱ロール、押出機等によって混練
し、冷却、粉砕、することによって成形材料を得ること
ができる。本発明で得られるエポキシ樹脂組成物を用い
て、電子部品を封止する方法としては、低圧トランスフ
ァ成形法が最も一般的であるが、インジェクション成
形、圧縮成形、注型等の方法によっても可能である。上
記した手段を用いて製造したエポキシ樹脂組成物は、臭
素系難燃剤、アンチモン化合物を含有しないため環境に
優しく、且つ成形性、信頼性に優れており、トランジス
タ、IC、LSI等の封止に好適に用いることができ
る。
As other additives, colorants (such as carbon black), modifiers (such as silicone and silicone rubber), and ion trappers (such as hydrotalcite and antimony-bismuth) can be used. As a general method for producing a molding material using the above-described raw materials, a raw material mixture having a predetermined compounding amount is sufficiently mixed by a mixer or the like, and then kneaded by a hot roll, an extruder, and the like, cooled, and pulverized. By doing so, a molding material can be obtained. As a method for sealing an electronic component using the epoxy resin composition obtained in the present invention, a low-pressure transfer molding method is the most common, but injection molding, compression molding, casting, and other methods are also possible. is there. The epoxy resin composition manufactured using the above-mentioned means is environmentally friendly because it does not contain a brominated flame retardant or an antimony compound, and is excellent in moldability and reliability, and is suitable for sealing of transistors, ICs, LSIs and the like. It can be suitably used.

【0008】[0008]

【実施例】以下、本発明を実施例に基づいて詳細に説明
するが、本発明はこれに限定されるものではない。 実施例1〜3、比較例1〜3 まず、表1に示す各種の素材を用い、実施例1〜3及び
比較例1〜3は各素材を予備混合(ドライブレンド)し
た後、二軸ロール(ロール表面温度約80℃)で10分
間混練し、冷却粉砕して製造した。
The present invention will be described below in detail with reference to examples, but the present invention is not limited to these examples. Examples 1 to 3 and Comparative Examples 1 to 3 First, the various materials shown in Table 1 were used. (Roll surface temperature of about 80 ° C.) for 10 minutes, followed by cooling and pulverization.

【0009】[0009]

【表1】 [Table 1]

【0010】[0010]

【表2】 この封止材を用い、トランスファー成形機を用い、金型
温度180℃、成形圧力70kgf/cm 、硬化時
間90秒の条件で各試験を行った。スパイラルフロー
は、EMMI1−66により測定した。熱時硬度はショ
ア硬度計にて測定した。また、この封止材を用いて、半
導体素子をトランスファー成形機で同様の条件で成形し
ポストキュア(175℃/5h)後、耐湿性と半田耐熱
性を評価した。耐湿性に用いた半導体装置は、SOP−
28ピンであり、85℃/85RH%72時間吸湿+2
15℃/90秒(VPS)の前処理後、PCT(121
℃/2気圧)に放置してChip上配線の断面の有無を
評価した。半田耐熱性に用いた半導体装置は、QFP8
0ピンの樹脂封止型半導体装置(外形寸法20×14×
2.0mm)であり、リードフレームは42アロイ材
(加工なし)で8×10mmのチップサイズを有するも
のである。このようにして得られた樹脂封止型半導体装
置について、半田耐熱性を以下に示す方法で測定した。
125℃/24hベーキング後、85℃/85%RHで
所定の時間吸湿した後、240℃/10secの処理を
行った時の樹脂封止型半導体装置のクラック発生率を求
めた。上記の試験結果をまとめて表3に示す。
[Table 2] Using the sealing material, each test was performed using a transfer molding machine under the conditions of a mold temperature of 180 ° C., a molding pressure of 70 kgf / cm 2, and a curing time of 90 seconds. Spiral flow was measured by EMMI1-66. Hot hardness was measured by a Shore hardness tester. Further, using this sealing material, a semiconductor element was molded by a transfer molding machine under the same conditions, and after post-curing (175 ° C./5 h), the moisture resistance and the solder heat resistance were evaluated. The semiconductor device used for moisture resistance is SOP-
28 pins, moisture absorption at 85 ° C / 85RH% for 72 hours +2
After pretreatment at 15 ° C./90 seconds (VPS), PCT (121
(° C./2 atm) to evaluate the presence or absence of a cross section of the wiring on the chip. The semiconductor device used for solder heat resistance is QFP8
0-pin resin-encapsulated semiconductor device (external dimensions 20 × 14 ×
2.0 mm), and the lead frame is made of 42 alloy material (no processing) and has a chip size of 8 × 10 mm. The solder heat resistance of the resin-encapsulated semiconductor device thus obtained was measured by the following method.
After baking at 125 ° C./24 h, moisture absorption was performed at 85 ° C./85% RH for a predetermined time, and a crack generation rate of the resin-encapsulated semiconductor device when a process at 240 ° C./10 sec was performed was determined. Table 3 summarizes the above test results.

【0011】[0011]

【表3】 [Table 3]

【0012】[0012]

【発明の効果】エポキシ樹脂、フェノール硬化剤及び無
機充填材を主成分とする半導体封止用エポキシ樹脂組成
物において、難燃剤としてモリブデン酸亜鉛を必須成分
として配合することにより、臭素系難燃剤、アンチモン
化合物を含有することなく難燃性UL94 V−0を満
足し、信頼性、成形性に優れ、且つ環境に対する影響が
極めて小さい成形材料を得ることができる。また、この
成形材料を用いて半導体素子を封止することで、信頼
性、難燃性に優れた半導体装置を得ることができる。
According to the epoxy resin composition for semiconductor encapsulation containing an epoxy resin, a phenol curing agent and an inorganic filler as main components, a brominated flame retardant can be obtained by blending zinc molybdate as an essential component as a flame retardant. A molding material that satisfies the flame retardant UL94 V-0 without containing an antimony compound, is excellent in reliability and moldability, and has an extremely small influence on the environment can be obtained. By sealing a semiconductor element using this molding material, a semiconductor device having excellent reliability and flame retardancy can be obtained.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】(A)エポキシ樹脂(B)硬化剤(C)モ
リブデン酸亜鉛(D)無機充填材を必須成分とし、
(D)成分の無機充填材の含有量が、樹脂組成物全体に
対して70〜95重量%であることを特徴とする半導体
封止用エポキシ樹脂組成物。
1. An epoxy resin (B) curing agent (C) zinc molybdate (D) inorganic filler as an essential component,
(D) The epoxy resin composition for semiconductor encapsulation, wherein the content of the inorganic filler as the component is 70 to 95% by weight based on the whole resin composition.
【請求項2】(C)成分のモリブデン酸亜鉛の含有量
が、樹脂組成物全体に対して0.05〜10.0重量%
である請求項1記載の半導体封止用エポキシ樹脂組成
物。
2. The content of the zinc molybdate of the component (C) is 0.05 to 10.0% by weight based on the whole resin composition.
The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein
【請求項3】(A)成分のエポキシ樹脂が、ビフェニル
型エポキシ樹脂である請求項1記載の半導体封止用エポ
キシ樹脂組成物。
3. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin as the component (A) is a biphenyl type epoxy resin.
【請求項4】(B)成分の硬化剤が、パラキシリレン変
性フェノール樹脂である請求項1記載の半導体封止用エ
ポキシ樹脂組成物。
4. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the curing agent (B) is a paraxylylene-modified phenol resin.
【請求項5】(D)成分の無機充填材の含有量が、85
〜95重量%である請求項1記載の半導体封止用エポキ
シ樹脂組成物。
5. The content of the inorganic filler of component (D) is 85.
2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the amount is from about 95% by weight.
【請求項6】請求項1乃至5のいずれかに記載の半導体
封止用エポキシ樹脂組成物を用いて、半導体素子を封止
してなる樹脂封止型半導体装置。
6. A resin-sealed semiconductor device in which a semiconductor element is sealed by using the epoxy resin composition for semiconductor sealing according to claim 1.
JP16544097A 1997-06-23 1997-06-23 Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same Expired - Lifetime JP3858353B2 (en)

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JP3858353B2 JP3858353B2 (en) 2006-12-13

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0953603A3 (en) * 1998-04-27 2001-04-25 Shin-Etsu Chemical Co., Ltd. Flame retardant semiconductor encapsulating epoxy resin compositions
JP2001294689A (en) * 2000-04-14 2001-10-23 Mitsubishi Gas Chem Co Inc Prepreg and laminated board
JP2002012741A (en) * 2000-06-27 2002-01-15 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0953603A3 (en) * 1998-04-27 2001-04-25 Shin-Etsu Chemical Co., Ltd. Flame retardant semiconductor encapsulating epoxy resin compositions
US6518332B2 (en) * 1998-04-27 2003-02-11 Shin-Etsu Chemical Co., Ltd. Semiconductor encapsulating epoxy resin compositions, and semiconductor devices encapsulated therewith
JP2001294689A (en) * 2000-04-14 2001-10-23 Mitsubishi Gas Chem Co Inc Prepreg and laminated board
JP2002012741A (en) * 2000-06-27 2002-01-15 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

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