JPH11103091A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JPH11103091A JPH11103091A JP26449397A JP26449397A JPH11103091A JP H11103091 A JPH11103091 A JP H11103091A JP 26449397 A JP26449397 A JP 26449397A JP 26449397 A JP26449397 A JP 26449397A JP H11103091 A JPH11103091 A JP H11103091A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- lead frame
- light
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、サファイア基板上
にｐ―ｎ接合を有する窒化ガリウム系化合物半導体を積
層した発光チップが、実装基板やリードフレームに載置
されてなる発光ダイオード、レーザーダイオード等の発
光デバイスに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode, a laser diode, and the like, in which a light emitting chip in which a gallium nitride compound semiconductor having a pn junction is laminated on a sapphire substrate is mounted on a mounting substrate or a lead frame. Light emitting device.
【０００２】[0002]
【従来の技術】発光ダイオード、レーザーダイオード等
の発光デバイスの材料として、ＧａＮ、ＧａＡＩＮ、Ｉ
ｎＧａＮ、ＩｎＡＩＧａＮ等の窒化ガリウム系化合物半
導体（以下、窒化物半導体という。）が知られている。
一般に、それら窒化物半導体は透光性、および絶縁性基
板であるサファイア基板の上に積層されて発光チップと
される。窒化物半導体はｐ型結晶が得られにくいため、
従来その半導体を用いた発光チップは絶縁層であるｉ層
を発光層とするいわゆるＭＩＳ構造であった。しかし、
最近窒化物半導体をｐ型とする技術が開発され、ｐ―ｎ
接合が実現できるようになってきた（例えば、特開平２
−２５７６７９号公報、特開平３―２１８３２５号公
報、特開平５−１８３１８９号公報等）。2. Description of the Related Art As materials for light emitting devices such as light emitting diodes and laser diodes, GaN, GaAIN, I
Gallium nitride based compound semiconductors (hereinafter referred to as nitride semiconductors) such as nGaN and InAIGaN are known.
Generally, these nitride semiconductors are stacked on a sapphire substrate which is a light-transmitting and insulating substrate to form a light-emitting chip. Since it is difficult to obtain a p-type crystal in a nitride semiconductor,
Conventionally, a light emitting chip using the semiconductor has a so-called MIS structure in which an i layer which is an insulating layer is a light emitting layer. But,
Recently, a technique of using a nitride semiconductor as a p-type semiconductor has been developed, and pn
Bonding has been realized (for example, see
-257679, JP-A-3-218325, JP-A-5-183189, etc.).
【０００３】前記のように窒化物半導体はサファイア基
板の上に積層され、基板側から電極を取り出すことがで
きないため、その発光チップに形成される正、負一対の
電極は同一面側（サファイア基板と対向する側）に形成
される。発光チップは、サファイア基板側を発光観測面
とする状態、または窒化物半導体層側を発光観測面とす
る状態で実装基板やリードフレームに載置される。As described above, since a nitride semiconductor is laminated on a sapphire substrate and an electrode cannot be taken out from the substrate side, a pair of positive and negative electrodes formed on the light emitting chip are connected to the same surface side (sapphire substrate). On the side opposite to). The light emitting chip is mounted on a mounting substrate or a lead frame with the sapphire substrate side as the light emission observation surface or with the nitride semiconductor layer side as the light emission observation surface.
【０００４】サファイア基板側を発光観測面とする発光
デバイスでは、発光チップの窒化物半導体層側に設けら
れた正、負一対の電極は実装基板や２つのリードフレー
ム上に跨るようにして載置され、実装基板の電極やリー
ドフレームの電極とは銀ベースト等の導電性接着剤を介
して電気的に接続されると共に、発光チップが実装基板
やリードフレーム上に固定される。In a light emitting device having a sapphire substrate side as a light emission observing surface, a pair of positive and negative electrodes provided on a nitride semiconductor layer side of a light emitting chip is mounted so as to straddle a mounting substrate or two lead frames. The electrodes of the mounting board and the electrodes of the lead frame are electrically connected to each other via a conductive adhesive such as silver base and the light emitting chip is fixed on the mounting board and the lead frame.
【０００５】一方、窒化物半導体側を発光観測面とする
発光デバイスでは、発光チップはサファイア基板側を実
装基板やリードフレームと接着することにより実装基板
や一つのリードフレーム上に固定され、窒化物半導体層
側の正、負それぞれの電極はワイヤーボンディングによ
りそれぞれの実装基板あるいはリードフレームと電気的
に接続される。On the other hand, in a light emitting device having a nitride semiconductor side as a light emission observation surface, a light emitting chip is fixed on a mounting substrate or one lead frame by bonding a sapphire substrate side to a mounting substrate or a lead frame. The positive and negative electrodes on the semiconductor layer side are electrically connected to respective mounting substrates or lead frames by wire bonding.
【０００６】前者の発光デバイスは、窒化物半導体の発
光を有効に外部に取り出させるため、外部量子効率が良
いという利点がある反面、１チップを２つのリードフレ
ームあるいは実装基板の２つの電極に跨って載置しなけ
ればならないため、チップサイズが大きくなり、ウエハ
ー１枚あたりにとれるチップ数が少なくなるという欠点
がある。[0006] The former light emitting device has an advantage that the external quantum efficiency is good because the light emission of the nitride semiconductor is effectively extracted to the outside. On the other hand, one chip extends over two lead frames or two electrodes of a mounting substrate. However, there is a disadvantage that the chip size is increased and the number of chips that can be obtained per wafer is reduced.
【０００７】一方、後者の発光デバイスは、一つのリー
ドフレーム上にあるいは実装基板の一つの電極上に一つ
の発光チップが載置できるため、チップサイズを小さく
できるという利点がある反面、窒化物半導体に形成され
た電極、ボンデイング時にできるボール等によって、発
光の一部が反射あるいは吸収されて阻害されるため、外
部量子効率が悪いという欠点がある。さらに、前者の発
光デバイスまたは他の窒化物半導体以外の半導体、例え
ばＧａＡｓ、ＧａＡｌＡｓ等の半導体材料を用いた発光
デバイスにもされているように、発光チップを銀ペース
ト等の不透光性の導電性材料で実装基板又はリードフレ
ームに接着すると、発光が導電性材料に吸収されてしま
い、外部量子効率が低下する。さらに後者の発光デバイ
スにおいて、その発光チップがｐ−ｎ接合界面を有して
いる場合、接着剤の種類によっては、電極間、あるいは
ｐ−ｎ接合間でショートしやすいという問題がある。具
体的には、チップを固定する際に多用されている１０-3
Ω・cm以下の比抵抗の銀ペースト等の導電性材料では、
導電性材料がｐ―ｎ接合界面にまで回り込み、電極をシ
ョートさせてしまう恐れがある。On the other hand, the latter light-emitting device has the advantage that the chip size can be reduced because one light-emitting chip can be mounted on one lead frame or one electrode of a mounting substrate. Some of the emitted light is reflected or absorbed and is impeded by the electrodes formed on the substrate, balls formed at the time of bonding, and the like. Further, as in the former light-emitting device or a light-emitting device using a semiconductor material other than a nitride semiconductor, for example, a semiconductor material such as GaAs or GaAlAs, a light-emitting chip is made of an opaque conductive material such as a silver paste. If the conductive material adheres to the mounting substrate or the lead frame with the conductive material, the light emission is absorbed by the conductive material, and the external quantum efficiency is reduced. Further, in the latter light-emitting device, when the light-emitting chip has a pn junction interface, there is a problem that short-circuit is likely to occur between electrodes or pn junction depending on the type of adhesive. Specifically, 10 −3 which is frequently used when fixing a chip is used.
For conductive materials such as silver paste with a specific resistance of Ωcm or less,
The conductive material may reach the pn junction interface and short-circuit the electrodes.
【０００８】[0008]
【発明が解決しようとする課題】特に、後者の構造の発
光デバイスは、前者の発光デバイスに比して発光チップ
全体をカップ形状の反射鏡の中に納めることが容易であ
り、生産性にも優れているため実用的である。さらに、
ｐ−ｎ接合を有する窒化物半導体よりなる発光チップ
は、ＭＩＳ構造の発光チップよりも発光出力、発光効率
とも抜群に優れているため、現在、その発光チップを後
者の構造として実用化することが最も求められている。In particular, in the light emitting device having the latter structure, the entire light emitting chip can be easily accommodated in a cup-shaped reflecting mirror as compared with the former light emitting device, and the productivity is also improved. It is practical because it is excellent. further,
Since a light emitting chip made of a nitride semiconductor having a pn junction has excellent light emission output and luminous efficiency as compared with a light emitting chip having a MIS structure, the light emitting chip can be practically used as the latter structure at present. The most sought after.
【０００９】このような事情を鑑み特開平７−８６６４
０号公報で、ｐ−ｎ接合を有する窒化物半導体よりなる
発光チップの窒化物半導体層側を発光観測面とする構造
の発光デバイスにおいて、まず第一に電極間あるいはｐ
−ｎ接合間ショートのない信頼性に優れた発光デバイス
を実現することと、第二にその発光デバイスの外部量子
効率を向上させることを目的として、透明な絶縁性接着
剤で接着することが提案されている。しかしながら、窒
化物半導体を用いた発光デバイスは従来の発光デバイス
に比較して静電気等の蓄積電荷によるｐ−ｎ接合の破壊
の発生確率が高く、絶縁性接着剤を用いる場合には０．
１％程度の割合で発生した。In view of such circumstances, Japanese Patent Laid-Open Publication No.
In Japanese Patent Application Laid-Open No. 0-115, in a light emitting device having a structure in which a nitride semiconductor layer side of a light emitting chip made of a nitride semiconductor having a pn junction is used as a light emission observation surface, first, between the electrodes or p.
-Proposal of bonding with a transparent insulating adhesive for the purpose of realizing a highly reliable light-emitting device without short circuit between n-junctions and, secondly, improving external quantum efficiency of the light-emitting device. Have been. However, a light emitting device using a nitride semiconductor has a higher probability of destruction of a pn junction due to accumulated charge such as static electricity than a conventional light emitting device.
It occurred at a rate of about 1%.
【００１０】本発明はこのような事情を鑑み成されたも
ので、その目的とするところは、ｐ−ｎ接合を有する窒
化物半導体よりなる発光チップの窒化物半導体層側を発
光観測面とする構造の発光デバイスにおいて、その発光
デバイスの外部量子効率を向上させると同時に、電極間
あるいはｐ−ｎ接合間のショートが発生せず、しかも静
電気等の蓄積電荷による破壊を防ぐことにある。The present invention has been made in view of such circumstances, and an object of the present invention is to use a nitride semiconductor layer side of a light emitting chip made of a nitride semiconductor having a pn junction as a light emission observation surface. In a light emitting device having a structure, the external quantum efficiency of the light emitting device is improved, and at the same time, a short circuit does not occur between electrodes or a pn junction, and destruction by accumulated charge such as static electricity is prevented.
【００１１】[0011]
【課題を解決するための手段】本発明の発光デバイス
は、サファイア基板上に、ｐ−ｎ接合を有する窒化ガリ
ウム系化合物半導体を積層した発光チップが、実装基板
又はリードフレーム上に載置されてなる発光デバイスに
おいて、前記サファイア基板と前記実装基板又はリード
フレームとが１０2〜１０13Ω・cmの比抵抗を有する透
明な接着剤、あるいは導電性粒子を含む接着剤を介して
接着されていることを特徴とする。According to a light emitting device of the present invention, a light emitting chip in which a gallium nitride compound semiconductor having a pn junction is laminated on a sapphire substrate is mounted on a mounting substrate or a lead frame. In the light emitting device, the sapphire substrate and the mounting substrate or the lead frame are bonded to each other via a transparent adhesive having a specific resistance of 10 2 to 10 13 Ωcm or an adhesive containing conductive particles. It is characterized by the following.
【００１２】本発明の発光デバイスにおいて、発光チッ
プのサファイア基板と実装基板又はリードフレームとを
１０2〜１０13Ω・cmの比抵抗を有する接着剤で接着す
ることにより、接着剤がｐ−ｎ接合界面にまで回り込ん
でも、電極間あるいはｐ―ｎ接合間をショートさせるこ
とがない。また、ある程度の導電性を付与することによ
り電荷蓄積を防止し、ｐ−ｎ接合の破壊が減少する。さ
らにその接着剤が透明である場合には、発光チップから
発する光を透過できるので外部量子効率が向上する。さ
らにまた、接着剤にその接着剤の材料よりも導電率およ
び熱伝導率の良い導電性粒子を混入させることにより、
接着剤の導電性を保持すると共に、熱伝導率がよくな
り、発光チップの発熱を実装基板に伝えることができ
る。In the light emitting device of the present invention, the sapphire substrate of the light emitting chip and the mounting substrate or the lead frame are bonded with an adhesive having a specific resistance of 10 2 to 10 13 Ω · cm, so that the adhesive becomes pn. Even if it reaches the junction interface, there is no short circuit between the electrodes or between the pn junctions. In addition, by providing a certain degree of conductivity, charge accumulation is prevented, and destruction of the pn junction is reduced. Further, when the adhesive is transparent, light emitted from the light emitting chip can be transmitted, so that the external quantum efficiency is improved. Furthermore, by mixing conductive particles having better conductivity and thermal conductivity than the material of the adhesive into the adhesive,
While maintaining the conductivity of the adhesive, the thermal conductivity is improved, and the heat generated by the light emitting chip can be transmitted to the mounting substrate.
【００１３】[0013]
【発明の実施の形態】図１に本発明の発光デバイスの一
構造例を表す断面図を示す。この図は窒化物半導体発光
チップよりなるＬＥＤの構造を示す図であり、サファイ
ア基板１の上に、ｎ型窒化ガリウム系化合物半導体層２
ａと、ｐ型窒化ガリウム系化合物半導体層２ｂとを積層
した発光チップを、実装基板としてカップ形状のリード
フレーム３のカップの底に載置し、サファイア基板１と
リードフレーム３とを接着剤４で接着した構造としてい
る。FIG. 1 is a sectional view showing an example of the structure of a light emitting device according to the present invention. FIG. 1 is a view showing the structure of an LED comprising a nitride semiconductor light emitting chip. An n-type gallium nitride based compound semiconductor layer 2 is formed on a sapphire substrate 1.
a and a p-type gallium nitride-based compound semiconductor layer 2b are mounted on the bottom of the cup of a cup-shaped lead frame 3 as a mounting substrate, and the sapphire substrate 1 and the lead frame 3 are bonded with an adhesive 4 The structure is adhered by.
【００１４】なお、ｎ型窒化ガリウム系化合物半導体層
２ａとｐ型窒化ガリウム系化合物半導体層２ｂ上には、
それぞれオーミック電極１０が形成されている。The n-type gallium nitride compound semiconductor layer 2a and the p-type gallium nitride compound semiconductor layer 2b are
Each ohmic electrode 10 is formed.
【００１５】また、チップ全体は樹脂によりレンズ状に
モールドされているが、樹脂は図示していない。The entire chip is molded into a lens shape with resin, but the resin is not shown.
【００１６】発光チップは、例えばダイボンダー等の自
動機器を用いてリードフレーム３上に載置、接着され
る。この際、図１に示すように、接着剤４が発光チップ
のサファイア基板１とリードフレーム３との間からはみ
出し、発光チップの側面にまで回り込んで、ｐ−ｎ接合
界面にまで達しても、接着剤４が、従来の１０-3Ω・cm
以下の導電性に対して１０2〜１０13Ω・cm、好ましく
は１０5〜１０12Ω・cmの導電性であるため、電極間あ
るいはｐ−ｎ接合間のショートが発生せず、ＬＥＤの信
頼性が向上する。The light emitting chip is mounted on and bonded to the lead frame 3 using an automatic device such as a die bonder. At this time, as shown in FIG. 1, even when the adhesive 4 protrudes from between the sapphire substrate 1 of the light emitting chip and the lead frame 3, it goes around to the side surface of the light emitting chip and reaches the pn junction interface. And the adhesive 4 is the same as the conventional 10 −3 Ω · cm.
Since it has a conductivity of 10 2 to 10 13 Ω · cm, preferably 10 5 to 10 12 Ω · cm for the following conductivity, no short circuit occurs between electrodes or pn junction, and Reliability is improved.
【００１７】特に、チップ厚さが２００μｍ以下、さら
に好ましくは１５０μｍである場合、１０2〜１０13Ω
・cm、好ましくは１０5〜１０12Ω・cmの導電性の接着
剤で接着すると、本発明の効果がより一層発揮されるの
で非常に好ましい。なぜなら、発光チップは、ｐ−ｎ接
合を有する窒化物半導体の厚さがせいぜい数μｍ〜十数
μｍ、サファイア基板の厚さが８０μｍ以上〜数百μｍ
で、ほとんどがサファイア基板の厚さで占められてい
る。従って、チップ厚さが２００μｍよりも厚いと、接
着剤が回り込んでもｐ−ｎ接合界面にまで達しにくくな
り、特に接着剤が従来の導電性接着剤であっても問題が
なくなってしまうからである。In particular, when the chip thickness is 200 μm or less, more preferably 150 μm, 10 2 to 10 13 Ω
* Cm, preferably 10 5 to 10 12 Ω · cm, is very preferable because the effects of the present invention can be further exhibited. This is because, in the light emitting chip, the thickness of the nitride semiconductor having a pn junction is several μm to several tens μm at most, and the thickness of the sapphire substrate is 80 μm or more to several hundred μm.
Most are occupied by the thickness of the sapphire substrate. Therefore, if the chip thickness is larger than 200 μm, it is difficult to reach the pn junction interface even if the adhesive flows around, and the problem is eliminated even if the adhesive is a conventional conductive adhesive. is there.
【００１８】ベースとなる接着剤４の材料として、最も
好ましくは、例えばエポキシ樹脂系、ユリア樹脂系、ア
クリル樹脂系、シリコン樹脂系の接着剤、低融点ガラス
等を使用することができるが、これらの材料は１０13Ω
・cmを超える絶縁性である。これらの樹脂は透明で、Ｌ
ＥＤにおいては、発光チップを封止する樹脂モールドの
溶融温度（数十〜百数十度以下）にも耐える。しかしな
がら、これらの材料を基本とした接着剤を用いてＬＥＤ
チップを実装し、リードフレームや実装基板へワイヤー
ボンディングする際、接着剤に蓄えられていた電荷によ
って窒化物半導体による発光デバイスでは放電による破
壊が生じる。これをさけるため１０2〜１０13Ω・cm、
好ましくは１０5〜１０12Ω・cmの導電性を付与するこ
とにより、電荷蓄積をさけることができ不良発生がなく
なった。Most preferably, for example, epoxy resin, urea resin, acrylic resin, silicone resin adhesive, low melting point glass, etc. can be used as the material of the adhesive 4 serving as a base. Material is 10 13 Ω
-Insulation exceeding cm. These resins are transparent and L
The ED withstands the melting temperature (several tens to one hundred and several tens of degrees C. or less) of the resin mold for sealing the light emitting chip. However, using an adhesive based on these materials,
When a chip is mounted and wire-bonded to a lead frame or a mounting substrate, a charge stored in an adhesive causes a light emitting device using a nitride semiconductor to be destroyed by discharge. To avoid this, 10 2 to 10 13 Ω · cm,
Preferably, by imparting a conductivity of 10 5 to 10 12 Ω · cm, charge accumulation can be avoided and the occurrence of defects has been eliminated.
【００１９】次に、接着剤４が透明であればさらに好ま
しい。上記の導電性かつ透明の接着剤を使用することに
より、窒化物半導体（２ａ、２ｂ）のリードフレーム側
への発光はサファイア基板１、接着剤４を透過して、さ
らにリードフレーム３の表面３′、及びカップの側面に
到達して発光観側面側に反射される。この際接着剤４が
上記の導電性を有しかつ透明であれば、発光チップの発
光を損失させることがなく、またｐ層とｎ層とをショー
トさせる心配もないので、接着剤４を多く使用できるこ
とにより、発光チップの接着力も強化でき、発光デバイ
スの信頼性が格段に向上する。なお本発明において、透
明とは必ずしも無色透明を意味するものではなく、窒化
物半導体の発光を透過すれば、最初から着色されて透光
性とされているもの、後に述べるフイラーによって着色
されて透光性とされているものも包含する。Next, it is more preferable that the adhesive 4 is transparent. By using the above-mentioned conductive and transparent adhesive, the light emission of the nitride semiconductor (2a, 2b) to the lead frame side passes through the sapphire substrate 1, the adhesive 4, and further the surface 3 of the lead frame 3. ′, And reaches the side surface of the cup and is reflected toward the light emission side surface. At this time, if the adhesive 4 has the above-described conductivity and is transparent, the light emission of the light emitting chip is not lost, and there is no fear of short-circuiting the p-layer and the n-layer. By being usable, the adhesive strength of the light emitting chip can be enhanced, and the reliability of the light emitting device can be significantly improved. In the present invention, the term “transparent” does not necessarily mean colorless and transparent. If the light emitted by the nitride semiconductor is transmitted, it is colored and translucent from the beginning, and is colored and translucent by a filler described later. Also included are those that are light-sensitive.
【００２０】透明な導電性接着剤を得るには、アクリル
系等のアセトニトリルを溶媒とすることができる接着剤
樹脂にヨウ化銅をアセトニトリルに溶解した液体を、１
〜１０Ｗｔ％混合することによって１０2〜１０12Ω・c
mの導電率の接着剤が得られる。In order to obtain a transparent conductive adhesive, a liquid obtained by dissolving copper iodide in acetonitrile in an adhesive resin that can use acetonitrile such as an acrylic solvent as a solvent is used.
10 2 to 10 12 Ω · c by mixing
An adhesive with a conductivity of m is obtained.
【００２１】同様に、透明な１０5〜１０12Ω・cmの接
着剤を得る方法として、例えばエポキシ樹脂系、ユリア
樹脂系、アクリル樹脂系、シリコン樹脂系の接着剤等を
ベースにして低分子化合物電荷移動媒体としてスチルベ
ンを樹脂に対して０．５〜２重量比、好適には０．９〜
１．２重量比を充分に分散させた溶液を接着剤とする。
これにより正孔伝導型の導電性接着剤が得られる。その
他の電荷移動媒体としてはオキサジアゾール、オキサゾ
ール等の複素環化合物、ピラゾリン誘導体、トリフェニ
ルメタン、ヒドラゾン、トリアリールアミン、Ｎ−フェ
ニルカルバゾール、スチルベン等電子写真感光体に応用
される低分子化合物が有用である。Similarly, as a method for obtaining a transparent adhesive of 10 5 to 10 12 Ω · cm, for example, a low molecular weight adhesive based on an epoxy resin-based, urea resin-based, acrylic resin-based, silicone resin-based adhesive or the like is used. Stilbene as a compound charge transfer medium is 0.5 to 2 weight ratio to resin, preferably 0.9 to 2%.
A solution in which a 1.2 weight ratio is sufficiently dispersed is used as an adhesive.
Thereby, a hole conductive type conductive adhesive is obtained. Other charge transfer media include oxadiazoles, heterocyclic compounds such as oxazoles, pyrazoline derivatives, triphenylmethane, hydrazone, triarylamines, N-phenylcarbazole, and low molecular compounds applied to electrophotographic photoreceptors such as stilbene. Useful.
【００２２】また、前記接着剤４が透明かつ１０2〜１
０13Ω・cm、好ましくは１０5〜１０ 12Ω・cmの導電性
である場合、サファイア基板と対向するリードフレーム
３の表面３′を鏡面状とすることにより、発光を減衰さ
せずに効率的に反射させることができる。図１では内部
が鏡面状のカップを設け、そのカップの底部に発光チッ
プを載置して、カップの側面、底面で発光を観測面側に
反射させているが、例えば平面ディスプレイのように、
特別なカップを設けていない発光デバイスにおいては、
例えば金、銀等の腐食されにくい金属を、発光チップを
接着する実装基板又はリードフレーム表面にメッキする
ことにより鏡面状にできる。またこれとは別に、カップ
の側面または底面、カップを設けていない場合には実装
基板又はリードフレームの接着面を白色又は銀色にして
も、発光を反射させることができる。白色又は銀色にす
るには例えばアルミナ、酸化チタン、酸化マグネシウ
ム、硫酸バリウム等、可視光の反射率が高い白色粉末を
塗布することにより実現できる。The adhesive 4 is transparent and 10Two~ 1
013Ω · cm, preferably 10Five-10 12Ω ・ cm conductivity
, The lead frame facing the sapphire substrate
The light emission is attenuated by making the surface 3 'of the mirror 3 a mirror surface.
It is possible to efficiently reflect the light without any reflection. In Figure 1 the interior
Provided a mirror-like cup, and a light-emitting chip
Light on the side and bottom of the cup
Although it is reflected, for example, like a flat display,
For light-emitting devices without special cups,
For example, a metal that is not easily corroded such as gold or silver
Plating on the mounting board or lead frame surface to be bonded
By doing so, it can be made mirror-like. Also apart from this, a cup
Side or bottom of the package, mounted if no cup is provided
Make the bonding surface of the board or lead frame white or silver.
Can also reflect light emission. White or silver
For example, alumina, titanium oxide, magnesium oxide
White powder with high visible light reflectance, such as
It can be realized by coating.
【００２３】図２は、本発明の他の実施例に係る発光デ
バイスの構造を示す断面図である。図中、図１と同一の
部材には図１と同一の符号を用いている。この図では、
リードフレーム３と対向するサファイア基板１の表面
に、金属薄膜５を形成して、サファイア基板１と接合し
た金属薄膜５面を鏡面状としている。このようにして鏡
面を形成すると、金属薄膜とサファイア基板との界面
（即ち、金属薄膜５の表面）で、窒化物半導体の発光を
反射させることができる。金属薄膜５を形成するには、
例えば蒸着、スパツタ等の方法を用い、Ａｌ、Ａｕ、Ａ
ｇ等の材料を好ましく用いることができる。これらの材
料よりなる薄膜を研磨、ポリッシングしたサファイア基
板１表面のほぼ全面に形成することにより、金属薄膜５
のサファイア基板界面、つまり発光観測面側の金属薄膜
５の表面を鏡面状とすることができ、有効に発光を反射
させることができる。さらに、１０2〜１０13Ω・cm、
好ましくは１０5〜１０12Ω・cmの接着剤４が透明であ
れば、金属薄膜５で発光チップの側面に反射される光を
透過させることができる。FIG. 2 is a sectional view showing the structure of a light emitting device according to another embodiment of the present invention. In the figure, the same members as those in FIG. 1 are denoted by the same reference numerals as in FIG. In this figure,
A metal thin film 5 is formed on the surface of the sapphire substrate 1 facing the lead frame 3, and the surface of the metal thin film 5 bonded to the sapphire substrate 1 has a mirror surface. When the mirror surface is formed in this manner, light emission of the nitride semiconductor can be reflected at the interface between the metal thin film and the sapphire substrate (that is, the surface of the metal thin film 5). To form the metal thin film 5,
For example, Al, Au, A
Materials such as g can be preferably used. By forming a thin film made of these materials on almost the entire surface of the sapphire substrate 1 polished and polished, the metal thin film 5 is formed.
The sapphire substrate interface, that is, the surface of the metal thin film 5 on the light emission observation surface side can be made mirror-like, and light emission can be effectively reflected. Further, 10 2 to 10 13 Ω · cm,
If the adhesive 4 of preferably 10 5 to 10 12 Ω · cm is transparent, light reflected on the side surface of the light emitting chip by the metal thin film 5 can be transmitted.
【００２４】図３は、本発明の更に他の実施例にかかる
発光デバイスの構造を示す断面図であり、図１と同一の
部材には図１と同一の符号を用いている。この図では、
ベース接着剤４の中に導電性粒子として酸化インジュー
ム６が混入され、全体として白色の透光性を有する接着
剤となっている。この酸化インジューム６が混入されて
いることにより、接着剤の比抵抗を１０5〜１０10Ω・c
m程度にすることができる。また同時に熱伝導率が向上
し、発光チップの発熱を有効に外部に逃がすことができ
る。通常、窒化物半導体よりなるチップは発熱すると、
発光効率が低下する傾向にあるので、酸化インジューム
６を混入させると、チップの発熱が酸化インジューム
６、リードフレーム３を通じて外部へ放熱され、チップ
の温度上昇が緩和され、発光効率の低下を防ぐことがで
きる。この酸化インジュームを混入させる場合、ベース
接着剤４が絶縁性で、透明であれば上記効果を得ること
ができる。FIG. 3 is a sectional view showing the structure of a light emitting device according to still another embodiment of the present invention. The same members as those in FIG. 1 are denoted by the same reference numerals as in FIG. In this figure,
Oxide indium 6 is mixed in the base adhesive 4 as conductive particles to provide a white translucent adhesive as a whole. The specific resistance of the adhesive is 10 5 to 10 10 Ω · c due to the inclusion of the oxidation indium 6.
m. At the same time, the thermal conductivity is improved, and the heat generated by the light emitting chip can be effectively released to the outside. Usually, when a chip made of a nitride semiconductor generates heat,
Since the luminous efficiency tends to decrease, when the oxide indium 6 is mixed, the heat generated from the chip is radiated to the outside through the oxide indium 6 and the lead frame 3, so that the temperature rise of the chip is moderated, and the decrease in the luminous efficiency is reduced. Can be prevented. When this indium oxide is mixed, the above-described effect can be obtained if the base adhesive 4 is insulating and transparent.
【００２５】また、酸化インジュームに加え、アルミナ
やシリカ等の絶縁性粒子（フィラー）を混合して用いて
も良い。In addition to the indium oxide, insulating particles (filler) such as alumina and silica may be mixed and used.
【００２６】[0026]
【発明の効果】本発明の発光デバイスは、その発光チッ
プのサファイア基板と、実装基板又はリードフレームと
を１０2〜１０13Ω・cmの比抵抗を有する接着剤で接着
固定しているため、ダイボンドの際、接着剤が発光チッ
プの側面を回り込んでｐ−ｎ接合界面にまで達しても、
電極間あるいはｐ−ｎ接合間がショートすることがな
く、発光チップの蓄積電荷による放電破壊による不良発
生もないので高い信頼性を得ることができる。According to the light emitting device of the present invention, the sapphire substrate of the light emitting chip and the mounting substrate or the lead frame are bonded and fixed with an adhesive having a specific resistance of 10 2 to 10 13 Ω · cm. At the time of die bonding, even if the adhesive goes around the side surface of the light emitting chip and reaches the pn junction interface,
There is no short circuit between the electrodes or between the pn junctions, and there is no failure due to discharge breakdown due to accumulated charges in the light emitting chip, so that high reliability can be obtained.
【００２７】さらに、前記接着剤が透明であれば、窒化
物半導体のサファイア基板側を透過する光は、減衰する
ことが少なく実装基板又はリードフレーム面に到達す
る。発光を観測面側に反射させる機能を有するカップの
底に発光チップが載置されていれば、発光はチップの側
面に回り込んだ接着剤をも透過して、そのカップで反射
される。従って、発光デバイスの外部量子効率が向上す
る。Further, if the adhesive is transparent, the light transmitted through the nitride semiconductor on the sapphire substrate side is less attenuated and reaches the mounting substrate or the lead frame surface. If the light-emitting chip is mounted on the bottom of a cup having a function of reflecting light emission to the observation surface side, light emission also passes through the adhesive wrapped around the side surface of the chip and is reflected by the cup. Therefore, the external quantum efficiency of the light emitting device is improved.
【００２８】また、接着剤に接着剤の材料よりも熱伝導
率のよい導電性粒子及び必要により絶縁性のフイラーを
混入すれば、接着剤の比抵抗を所定の範囲にすることが
できて、上記効果を奏することに加えて、発光チップの
放熱がよくなり、発光効率の低下を防ぐことができる。Also, if the adhesive is mixed with conductive particles having a higher thermal conductivity than the material of the adhesive and, if necessary, an insulating filler, the specific resistance of the adhesive can be kept within a predetermined range. In addition to the above effects, the heat dissipation of the light emitting chip is improved, and a decrease in luminous efficiency can be prevented.
【図１】 本発明の発光デバイスの一実施例を示した模
式的断面図である。FIG. 1 is a schematic sectional view showing one embodiment of a light emitting device of the present invention.
【図２】 本発明の発光デバイスの別の実施例を示した
模式的断面図である。FIG. 2 is a schematic sectional view showing another embodiment of the light emitting device of the present invention.
【図３】 本発明の発光デバイスの更に別の実施例を示
した模式的断面図である。FIG. 3 is a schematic sectional view showing still another embodiment of the light emitting device of the present invention.
１ サファイア基板 ２ａ ｎ型窒化ガリウム系化合物半導体層 ２ｂ ｐ型窒化ガリウム系化合物半導体層 ３ リードフレーム ３′ リードフレーム表面 ４ 接着剤 ５ 金属薄膜 ６ 導電性粒子（酸化インジューム） １０ オーミック電極 Reference Signs List 1 sapphire substrate 2a n-type gallium nitride-based compound semiconductor layer 2b p-type gallium nitride-based compound semiconductor layer 3 lead frame 3 'lead frame surface 4 adhesive 5 metal thin film 6 conductive particles (indium oxide) 10 ohmic electrode
Claims (6)
窒化ガリウム系化合物半導体を積層した発光チップが、
実装基板又はリードフレーム上に載置されてなる発光デ
バイスにおいて、前記サファイア基板と前記実装基板又
はリードフレームとが１０2〜１０13Ω・cmの比抵抗を
有する透明な接着剤を介して接着されていることを特徴
とする発光デバイス。1. A light-emitting chip in which a gallium nitride-based compound semiconductor having a pn junction is laminated on a sapphire substrate,
In a light emitting device mounted on a mounting substrate or a lead frame, the sapphire substrate and the mounting substrate or the lead frame are bonded via a transparent adhesive having a specific resistance of 10 2 to 10 13 Ωcm. A light-emitting device, characterized in that:
窒化ガリウム系化合物半導体を積層した発光チップが、
実装基板又はリードフレーム上に載置されてなる発光デ
バイスにおいて、前記サファイア基板と前記実装基板又
はリードフレームとが導電性粒子を含む１０2〜１０13
Ω・cmの比抵抗を有する接着剤を介して接着されている
ことを特徴とする発光デバイス。2. A light emitting chip in which a gallium nitride-based compound semiconductor having a pn junction is laminated on a sapphire substrate,
In becomes placed on the mounting substrate or the lead frame emitting devices 10 2 to 10 13, including said sapphire substrate and the mounting substrate or the lead frame is electrically conductive particles
A light-emitting device which is bonded via an adhesive having a specific resistance of Ω · cm.
光チップの光を発光観測面側に反射させるカップが設け
られており、前記カップの底部に前記発光チップが載置
されていることを特徴とする請求項１又は２に記載の発
光デバイス。3. The mounting board or the lead frame is provided with a cup for reflecting the light of the light emitting chip toward the light emission observing surface, and the light emitting chip is mounted on the bottom of the cup. The light emitting device according to claim 1.
板又はリードフレームの表面が、鏡面状あるいは白色又
は銀色とされていることを特徴とする請求項１又は２に
記載の発光デバイス。4. The light emitting device according to claim 1, wherein a surface of the mounting substrate or the lead frame bonded to the sapphire substrate is mirror-like, white or silver.
はリードフレームと接着される側の表面に鏡面状の表面
を有する層が積層されていることを特徴とする請求項１
又は２に記載の発光デバイス。5. A layer having a mirror-like surface is laminated on a surface of the sapphire substrate on a side adhered to the mounting substrate or the lead frame.
Or the light emitting device according to 2.
であることを特徴とする請求項１又は２に記載の発光デ
バイス。6. The light emitting device according to claim 1, wherein the thickness of the light emitting chip is 200 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26449397A JP3286221B2 (en) | 1997-09-29 | 1997-09-29 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26449397A JP3286221B2 (en) | 1997-09-29 | 1997-09-29 | Light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11103091A true JPH11103091A (en) | 1999-04-13 |
| JP3286221B2 JP3286221B2 (en) | 2002-05-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26449397A Expired - Fee Related JP3286221B2 (en) | 1997-09-29 | 1997-09-29 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3286221B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227494A (en) * | 2007-03-09 | 2008-09-25 | Ivoclar Vivadent Ag | Light-emitting apparatus |
| JP2008251604A (en) * | 2007-03-29 | 2008-10-16 | Toyoda Gosei Co Ltd | Light-emitting device and its manufacturing method |
| JP2011222574A (en) * | 2010-04-05 | 2011-11-04 | Stanley Electric Co Ltd | Light-emitting device and manufacturing method for the same |
| WO2011152150A1 (en) * | 2010-06-03 | 2011-12-08 | 信越化学工業株式会社 | Illumination member sealed with silicone rubber and manufacturing method for same |
| JP2013541857A (en) * | 2010-11-08 | 2013-11-14 | 東芝テクノセンター株式会社 | LED-based light source using asymmetric conductors |
| KR101523526B1 (en) * | 2008-09-30 | 2015-05-28 | 서울반도체 주식회사 | Lighting module |
| JP2019165122A (en) * | 2018-03-20 | 2019-09-26 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing the same |
| JP2019165237A (en) * | 2015-12-22 | 2019-09-26 | 日亜化学工業株式会社 | Light-emitting device |
-
1997
- 1997-09-29 JP JP26449397A patent/JP3286221B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227494A (en) * | 2007-03-09 | 2008-09-25 | Ivoclar Vivadent Ag | Light-emitting apparatus |
| JP2008251604A (en) * | 2007-03-29 | 2008-10-16 | Toyoda Gosei Co Ltd | Light-emitting device and its manufacturing method |
| KR101523526B1 (en) * | 2008-09-30 | 2015-05-28 | 서울반도체 주식회사 | Lighting module |
| JP2011222574A (en) * | 2010-04-05 | 2011-11-04 | Stanley Electric Co Ltd | Light-emitting device and manufacturing method for the same |
| WO2011152150A1 (en) * | 2010-06-03 | 2011-12-08 | 信越化学工業株式会社 | Illumination member sealed with silicone rubber and manufacturing method for same |
| CN102918318A (en) * | 2010-06-03 | 2013-02-06 | 信越化学工业株式会社 | Illumination member sealed with silicone rubber and manufacturing method for same |
| JPWO2011152150A1 (en) * | 2010-06-03 | 2013-07-25 | 信越化学工業株式会社 | Illumination member sealed with silicone rubber and method of manufacturing the same |
| JP5387764B2 (en) * | 2010-06-03 | 2014-01-15 | 信越化学工業株式会社 | Lighting member sealed with silicone rubber |
| JP2013541857A (en) * | 2010-11-08 | 2013-11-14 | 東芝テクノセンター株式会社 | LED-based light source using asymmetric conductors |
| JP2019165237A (en) * | 2015-12-22 | 2019-09-26 | 日亜化学工業株式会社 | Light-emitting device |
| JP2019165122A (en) * | 2018-03-20 | 2019-09-26 | 日亜化学工業株式会社 | Light-emitting device and method for manufacturing the same |
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| Publication number | Publication date |
|---|---|
| JP3286221B2 (en) | 2002-05-27 |
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