JPH1092879A - Multilayer wiring board - Google Patents

Multilayer wiring board

Info

Publication number
JPH1092879A
JPH1092879A JP8246067A JP24606796A JPH1092879A JP H1092879 A JPH1092879 A JP H1092879A JP 8246067 A JP8246067 A JP 8246067A JP 24606796 A JP24606796 A JP 24606796A JP H1092879 A JPH1092879 A JP H1092879A
Authority
JP
Japan
Prior art keywords
organic resin
insulating layer
resin insulating
thin film
multilayer wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8246067A
Other languages
Japanese (ja)
Inventor
Seiichi Takami
征一 高見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP8246067A priority Critical patent/JPH1092879A/en
Publication of JPH1092879A publication Critical patent/JPH1092879A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To form wiring conductors at a high density and surely and tightly electrically connect semiconductor elements and capacitor elements to the wiring conductors by providing dummy pads facing bonding pads on the bottom of a topmost org. resin insulation layer. SOLUTION: Org. resin insulation layers 2 and thin film wiring conductors 3 are alternately laminated to form a multilayer wiring 4 provided with bonding pads 7 on the top surface of the topmost org. resin insulation layer 2a. The pads 7 are electrically connected to the wiring conductors 3. On the bottom surface of the topmost org. resin insulation layer 2a, dummy pads 8 facing the bonding pads 7 are disposed to effectively block the topmost insulation layer 2a from being recessed, thereby surely and tightly electrically connecting the electrodes of active components such as semiconductor elements and passive components such as capacitor elements and resistor elements to the bonding pads 7.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、多層配線基板に関
し、より詳細には混成集積回路装置や半導体素子を収容
する半導体素子収納用パッケージ等に使用される多層配
線基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board, and more particularly to a multilayer wiring board used for a hybrid integrated circuit device, a semiconductor element housing package for housing a semiconductor element, and the like.

【0002】[0002]

【従来の技術】従来、混成集積回路装置や半導体素子収
納用パッケージ等に使用される多層配線基板はその配線
導体がMo−Mn法等の厚膜形成技術によって形成され
ている。
2. Description of the Related Art Hitherto, a multilayer wiring board used in a hybrid integrated circuit device, a package for accommodating a semiconductor element, or the like, has its wiring conductor formed by a thick film forming technique such as the Mo-Mn method.

【0003】このMo−Mn法は通常、タングステン、
モリブデン、マンガン等の高融点金属粉末に有機溶剤、
溶媒を添加混合し、ペースト状となした金属ペーストを
生セラミック体の外表面にスクリーン印刷法により所定
パターンに印刷塗布し、次にこれを複数枚積層するとと
もに還元雰囲気中で焼成し、高融点金属粉末と生セラミ
ック体とを焼結一体化させる方法である。
[0003] This Mo-Mn method is generally used for tungsten,
Organic solvents for high melting point metal powders such as molybdenum and manganese,
A solvent is added and mixed, and a paste-like metal paste is applied by printing on the outer surface of the green ceramic body in a predetermined pattern by a screen printing method. This is a method of sintering and integrating a metal powder and a green ceramic body.

【0004】尚、前記配線導体が形成されるセラミック
体としては通常、酸化アルミニウム質焼結体やムライト
質焼結体等の酸化物系セラミックス、或いは表面に酸化
物膜を被着させた窒化アルミニウム質焼結体や炭化珪素
質焼結体等の非酸化物系セラミックスが使用される。
Incidentally, the ceramic body on which the wiring conductor is formed is usually an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or an aluminum nitride having an oxide film adhered on the surface. Non-oxide ceramics such as a porous sintered body and a silicon carbide sintered body are used.

【0005】しかしながら、このMo−Mn法を用いて
配線導体を形成した場合、配線導体は金属ペーストをス
クリーン印刷することにより形成されることから微細化
が困難で、配線導体を高密度に形成することができない
という欠点を有していた。
However, when the wiring conductor is formed by using the Mo-Mn method, the wiring conductor is formed by screen-printing a metal paste, so that miniaturization is difficult, and the wiring conductor is formed at a high density. Had the disadvantage of not being able to do so.

【0006】そこで上記欠点を解消するために配線導体
を従来周知の厚膜形成技術により形成するのに代えて微
細化が可能な薄膜形成技術を用いて高密度に形成した多
層配線基板が使用されるようになってきた。
In order to solve the above-mentioned drawbacks, instead of forming the wiring conductor by a conventionally known thick film forming technique, a multilayer wiring board formed by using a thin film forming technique capable of miniaturization is used. It has become.

【0007】かかる配線導体を薄膜形成技術により形成
した多層配線基板は、酸化アルミニウム質焼結体から成
るセラミックスやガラス繊維を織り込んだガラス布にエ
ポキシ樹脂を含浸させて形成されるガラスエポキシ樹脂
等から成る基板の上面にスピンコート法及び熱硬化処理
によって形成されるエポキシ樹脂等の有機樹脂から成る
絶縁層と、銅やアルミニウム等の金属を無電解メッキ法
や蒸着法等の薄膜形成技術及びフォトリソグラフィー技
術を採用することによって形成される薄膜配線導体とを
交互に積層させるとともに、上下に位置する薄膜配線導
体を有機樹脂絶縁層に設けたスルーホール導体を介して
電気的に接続させた構造を有しており、最上層の有機樹
脂絶縁層上面に前記薄膜配線導体と電気的に接続するボ
ンディングパッドを形成しておき、該ボンディングパッ
ドに半導体素子等の能動部品や容量素子、抵抗器等の受
動部品の電極を熱圧着等により接続させるようになって
いる。
A multilayer wiring board in which such wiring conductors are formed by a thin film forming technique is made of glass epoxy resin formed by impregnating ceramics made of aluminum oxide sintered body or glass cloth woven with glass fibers with epoxy resin. An insulating layer made of an organic resin such as an epoxy resin formed by spin coating and thermosetting on the upper surface of a substrate made of a metal, such as copper or aluminum, and a thin film forming technique such as an electroless plating method or a vapor deposition method, and photolithography. This technology has a structure in which thin-film wiring conductors formed by adopting the technology are alternately laminated, and thin-film wiring conductors located above and below are electrically connected via through-hole conductors provided in the organic resin insulating layer. A bonding pad electrically connected to the thin film wiring conductor on the upper surface of the uppermost organic resin insulating layer. Formed; then, becomes active component, a capacitor such as a semiconductor element to said bonding pad, a passive component of the electrode of the resistor or the like so as to be connected by thermocompression bonding or the like.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、この有
機樹脂絶縁層と薄膜配線導体を交互に積層して成る多層
配線基板は、最上層の有機樹脂絶縁層上面に形成したボ
ンディングパッドに半導体素子等の能動部品や容量素
子、抵抗器等の受動部品の電極を熱圧着等により接続さ
せる際、最上層の有機樹脂絶縁層にへこみが発生して、
ボンディングパッドに半導体素子等の能動部品や容量素
子、抵抗器等の受動部品の電極を確実、強固に接続させ
ることができないという欠点を誘発した。
However, the multi-layer wiring board formed by alternately laminating the organic resin insulating layers and the thin film wiring conductors has a bonding pad formed on the uppermost organic resin insulating layer. When connecting the electrodes of active components, capacitive elements, passive components such as resistors by thermocompression bonding etc., dents occur in the uppermost organic resin insulating layer,
This has caused a drawback that the electrodes of active components such as semiconductor devices and passive components such as capacitors and resistors cannot be securely and firmly connected to the bonding pads.

【0009】本発明は上述の欠点に鑑み案出されたもの
で、その目的は配線導体を薄膜形成技術により形成し、
配線導体を高密度に形成するのを可能とするととも配線
導体に半導体素子や容量素子等の電極を確実、強固に電
気的接続させることができる多層配線基板を提供するこ
とにある。
The present invention has been made in view of the above-mentioned drawbacks, and has as its object to form a wiring conductor by a thin film forming technique,
It is an object of the present invention to provide a multilayer wiring board that enables a wiring conductor to be formed at a high density and that can securely and firmly electrically connect electrodes of a semiconductor element, a capacitor element, and the like to the wiring conductor.

【0010】[0010]

【課題を解決するための手段】本発明は、基板上に、有
機樹脂絶縁層と薄膜配線導体とを交互に積層するととも
に上下に位置する薄膜配線導体を有機樹脂絶縁層に設け
たスルーホール導体を介して電気的に接続してなり、最
上層の有機樹脂絶縁層上面に、前記薄膜配線導体と電気
的に接続し、外部の電子部品が接続されるボンデングパ
ッドを設けて成る多層配線基板であって、前記最上層の
有機樹脂絶縁層下面で前記ボンディングパッドと対向す
る位置にダミーパッドを配設したことを特徴とするもの
である。
According to the present invention, there is provided a through-hole conductor in which an organic resin insulating layer and a thin film wiring conductor are alternately laminated on a substrate and thin film wiring conductors located above and below are provided on the organic resin insulating layer. A multi-layer wiring board provided with a bonding pad electrically connected to the thin film wiring conductor and connected to an external electronic component on the upper surface of the uppermost organic resin insulating layer. Wherein a dummy pad is provided at a position facing the bonding pad on the lower surface of the uppermost organic resin insulating layer.

【0011】本発明の多層配線基板によれば、絶縁基板
上に薄膜形成技術によって配線を形成したことから配線
の微細化が可能となり、配線を極めて高密度に形成する
ことが可能となる。
According to the multilayer wiring board of the present invention, since the wiring is formed on the insulating substrate by the thin film forming technique, the wiring can be miniaturized, and the wiring can be formed at a very high density.

【0012】また本発明の多層配線基板によれば、最上
層の有機樹脂絶縁層下面で半導体素子や容量素子等が接
続されるボンディングパッドと対向する位置にダミーパ
ッドを配設したことから、ボンディングパッドに半導体
素子等の能動部品や容量素子、抵抗器等の受動部品の電
極を熱圧着等により接続させる際、最上層の有機樹脂絶
縁層にへこみが形成されるのが前記ダミーパッドの配設
によって有効に阻止され、その結果、ボンディングパッ
ドに半導体素子等の能動部品や容量素子、抵抗器等の受
動部品の電極を確実、強固に電気的接続させることが可
能となる。
According to the multilayer wiring board of the present invention, since the dummy pad is provided on the lower surface of the uppermost organic resin insulating layer at a position opposite to the bonding pad to which a semiconductor element, a capacitance element and the like are connected, bonding is performed. When connecting electrodes of active components such as semiconductor elements and the like and capacitive components and passive components such as resistors to the pads by thermocompression bonding or the like, a depression is formed in the uppermost organic resin insulating layer. As a result, it is possible to reliably and firmly electrically connect the electrodes of active components such as semiconductor devices and the like to passive components such as capacitors and resistors to the bonding pads.

【0013】[0013]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明の多層配線基板の一実
施例を示し、1は基板、2は有機樹脂絶縁層、3は薄膜
配線導体である。
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of the multilayer wiring board of the present invention, wherein 1 is a substrate, 2 is an organic resin insulating layer, and 3 is a thin film wiring conductor.

【0014】前記基板1はその上面に有機樹脂絶縁層2
と薄膜配線導体3とから成る多層配線部4が配設されて
おり、該多層配線部4を支持する支持部材として作用す
る。
The substrate 1 has an organic resin insulating layer 2 on its upper surface.
And a thin-film wiring conductor 3, which serves as a support member for supporting the multi-layer wiring portion 4.

【0015】前記基板1は酸化アルミニウム質焼結体や
ムライト質焼結体等の酸化物系セラミックス、或いは表
面に酸化物膜を有する窒化アルミニウム質焼結体、炭化
珪素質焼結体等の非酸化物系セラミックス、更にはガラ
ス繊維を織る込んだ布にエポキシ樹脂を含浸させたガラ
スエポキシ樹脂等の電気絶縁材料で形成されており、例
えば、酸化アルミニウム質焼結体で形成されている場合
には、アルミナ、シリカ、カルシア、マグネシア等の原
料粉末に適当な有機溶剤、溶媒を添加混合して泥漿状と
なすとともにこれを従来周知のドクターブレード法やカ
レンダーロール法を採用することによってセラミックグ
リーンシート(セラミック生シート)を形成し、しかる
後、前記セラミックグリーンシートに適当な打ち抜き加
工を施し、所定形状となすとともに高温(約1600
℃)で焼成することによって、或いはアルミナ等の原料
粉末に適当な有機溶剤、溶媒を添加混合して原料粉末を
調整するとともに該原料粉末をプレス成形機によって所
定形状に成形し、最後に前記成形体を約1600℃の温
度で焼成することによって製作され、またガラスエポキ
シ樹脂から成る場合は、例えばガラス繊維を織り込んだ
布にエポキシ樹脂の前駆体を含浸させるとともに該エポ
キシ樹脂前駆体を所定の温度で熱硬化させることによっ
て製作される。
The substrate 1 is made of an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or a non-conductive material such as an aluminum nitride sintered body or a silicon carbide sintered body having an oxide film on its surface. Oxide ceramics, and further made of an electrically insulating material such as glass epoxy resin impregnated with epoxy resin in a cloth woven with glass fiber, for example, when formed of aluminum oxide sintered body A ceramic green sheet is obtained by adding a suitable organic solvent and a solvent to raw material powders such as alumina, silica, calcia and magnesia to form a slurry by mixing and using a conventionally known doctor blade method or calender roll method. (Ceramic green sheet), and thereafter, the ceramic green sheet is subjected to an appropriate punching process to obtain a predetermined shape. Hot together form (about 1600
C) or by mixing a raw material powder such as alumina with an appropriate organic solvent and solvent to adjust the raw material powder and form the raw material powder into a predetermined shape by a press molding machine. If the body is made by firing the body at a temperature of about 1600 ° C. and is made of glass epoxy resin, for example, a cloth woven with glass fiber is impregnated with the epoxy resin precursor and the epoxy resin precursor is heated to a predetermined temperature. It is manufactured by heat curing.

【0016】また前記基板1はその上面に有機樹脂絶縁
層3と薄膜配線導体3とが交互に多層に配設されて形成
される多層配線部4が被着されており、該多層配線部4
を構成する有機樹脂絶縁層2は上下に位置する薄膜配線
導体3の電気的絶縁をはかる作用をなし、また薄膜配線
導体3は電気信号を伝達するための伝達路として作用す
る。
On the upper surface of the substrate 1, a multilayer wiring portion 4 formed by alternately arranging an organic resin insulating layer 3 and thin film wiring conductors 3 in a multilayer is attached.
The organic resin insulating layer 2 has the function of electrically insulating the upper and lower thin film wiring conductors 3, and the thin film wiring conductor 3 functions as a transmission path for transmitting electric signals.

【0017】前記多層配線部4の有機樹脂絶縁層2は、
エポキシ樹脂、ビスマレイミドポリアジド樹脂、ポリフ
ェニレンエーテル樹脂、ふっ素樹脂等の有機樹脂から成
り、例えば、エポキシ樹脂からなる場合、ビスフェノー
ルA型エポキシ樹脂、ノボラック型エポキシ樹脂、グリ
シジルエステル型エポキシ樹脂等にアミン系硬化剤、イ
ミダゾール系硬化剤、酸無水物系硬化剤等の硬化剤を添
加混合してペースト状のエポキシ樹脂前駆体を得るとと
もに該エポキシ樹脂前駆体を基板1の上部にスピンコー
ト法により被着させ、しかる後、これを80℃〜200
℃の熱で0.5〜3時間熱処理し、熱硬化させることに
よって形成される。
The organic resin insulating layer 2 of the multilayer wiring section 4
It is made of an organic resin such as an epoxy resin, a bismaleimide polyazide resin, a polyphenylene ether resin, and a fluororesin. For example, when it is made of an epoxy resin, a bisphenol A-type epoxy resin, a novolak-type epoxy resin, a glycidyl ester-type epoxy resin, and an amine-based A curing agent such as a curing agent, an imidazole-based curing agent, and an acid anhydride-based curing agent is added and mixed to obtain a paste-like epoxy resin precursor, and the epoxy resin precursor is applied on the substrate 1 by spin coating. After that, this is brought to 80 ° C to 200 ° C.
It is formed by heat-treating with heat of 0.5 ° C. for 0.5 to 3 hours and heat curing.

【0018】更に前記多層配線部4の有機樹脂絶縁層2
はその各々の所定位置に最小径が有機樹脂絶縁層2の厚
みに対して約1.5倍程度のスルーホール5が形成され
ており、該スルーホール5は後述する有機樹脂絶縁層2
を介して上下に位置する薄膜配線導体3の各々を電気的
に接続するスルーホール導体6を形成するための形成孔
として作用する。
Further, the organic resin insulating layer 2 of the multilayer wiring section 4
Has a through hole 5 having a minimum diameter of about 1.5 times the thickness of the organic resin insulating layer 2 at each predetermined position.
And serves as a forming hole for forming a through-hole conductor 6 that electrically connects each of the thin film wiring conductors 3 located above and below via the through hole.

【0019】前記有機樹脂絶縁層2に設けるスルーホー
ル5は有機樹脂絶縁層2に従来周知のフォトリソグラフ
ィー技術を採用することによって所定の径に形成され
る。
The through-holes 5 provided in the organic resin insulating layer 2 are formed in the organic resin insulating layer 2 to a predetermined diameter by employing a conventionally known photolithography technique.

【0020】また前記各有機樹脂絶縁層2の上面には所
定パターンの薄膜配線導体3が、更に各有機樹脂絶縁層
2に設けたスルーホール5の内壁にはスルーホール導体
6が各々配設されており、スルーホール導体6によって
間に有機樹脂絶縁層2を挟んで上下に位置する各薄膜配
線導体3の各々が電気的に接続されるようになってい
る。
A thin-film wiring conductor 3 having a predetermined pattern is provided on the upper surface of each organic resin insulating layer 2, and a through-hole conductor 6 is provided on the inner wall of a through hole 5 provided in each organic resin insulating layer 2. Each of the thin-film wiring conductors 3 located above and below the organic resin insulating layer 2 with the through-hole conductor 6 interposed therebetween is electrically connected.

【0021】前記各有機樹脂絶縁層の上面及びスルーホ
ール5の内壁に配設される薄膜配線導体3及びスルーホ
ール導体6は銅、ニッケル、金、アルミニウム等の金属
材料を無電解メッキ法や蒸着法、スパッタリング法等の
薄膜形成技術及びフォトリソグラフィー技術を採用する
ことによって形成され、例えば、銅で形成されている場
合には、有機樹脂絶縁層2の上面及びスルーホール5の
内表面に 硫酸銅0.06モル/リットル、ホルマリン
0.3モル/リットル、水酸化ナトリウム0.35モル
/リットル、エチレンジアミン四酢酸0.35モル/リ
ットルからなる無電解銅メッキ浴を用いて厚さ1μm乃
至40μmの銅層を被着させ、しかる後、前記銅層をフ
ォトリソグラフィー技術により所定パターンに加工する
ことによって各有機樹脂絶縁層2間、及びスルーホール
5内壁に配設される。この場合、薄膜配線導体3及びス
ルーホール導体6は薄膜形成技術により形成されること
から配線の微細化が可能であり、これによって薄膜配線
導体3を極めて高密度に形成することが可能となる。
The thin-film wiring conductor 3 and the through-hole conductor 6 disposed on the upper surface of each organic resin insulating layer and the inner wall of the through-hole 5 are made of a metal material such as copper, nickel, gold, or aluminum by electroless plating or vapor deposition. For example, in the case of being formed of copper, copper sulfate is formed on the upper surface of the organic resin insulating layer 2 and the inner surface of the through hole 5 when the film is formed of copper. An electroless copper plating bath composed of 0.06 mol / l, formalin 0.3 mol / l, sodium hydroxide 0.35 mol / l, and ethylenediaminetetraacetic acid 0.35 mol / l has a thickness of 1 μm to 40 μm. A copper layer is applied, and thereafter, each of the organic layers is processed by processing the copper layer into a predetermined pattern by a photolithography technique. Between fat insulating layer 2, and is disposed in the through hole 5 the inner wall. In this case, since the thin-film wiring conductor 3 and the through-hole conductor 6 are formed by a thin-film forming technique, the wiring can be miniaturized, and thereby the thin-film wiring conductor 3 can be formed at an extremely high density.

【0022】尚、前記有機樹脂絶縁層2と薄膜配線導体
3とを交互に多層に配設して形成される多層配線部4は
各有機樹脂絶縁層2の上面を中心線平均粗さ(Ra)で
0.05μm≦Ra≦5μmの粗面としておくと有機樹
脂絶縁層2と薄膜配線導体3との接合及び上下に位置す
る有機樹脂絶縁層2同士の接合を強固となすことができ
る。従って、前記多層配線部4の各有機樹脂絶縁層2は
その上面をエッチング加工法等よって粗し、中心線平均
粗さ(Ra)で0.05μm≦Ra≦5μmの粗面とし
ておくことが好ましい。
The multilayer wiring section 4 formed by alternately arranging the organic resin insulating layers 2 and the thin film wiring conductors 3 in multiple layers has a center line average roughness (Ra) on the upper surface of each organic resin insulating layer 2. If the rough surface is set to 0.05 μm ≦ Ra ≦ 5 μm in ()), the bonding between the organic resin insulating layer 2 and the thin film wiring conductor 3 and the bonding between the organic resin insulating layers 2 located above and below can be made strong. Therefore, it is preferable that the upper surface of each organic resin insulating layer 2 of the multilayer wiring portion 4 is roughened by an etching method or the like, so that the center line average roughness (Ra) has a rough surface of 0.05 μm ≦ Ra ≦ 5 μm. .

【0023】また前記有機樹脂絶縁層2はその各々の厚
みが100μmを越えると有機樹脂絶縁層2にフォトリ
ソグラフィー技術を採用することによってスルーホール
5を形成する際、エッチング加工時間が長くなってスル
ーホール5を所望する鮮明な形状に形成するのが困難と
なり、また5μm未満となると有機樹脂絶縁層2の上面
に上下に位置する有機樹脂絶縁層2の接合強度を上げる
ための粗面加工を施す際、有機樹脂絶縁層2に不要な穴
が形成され上下に位置する薄膜配線導体3に不要な電気
的短絡を招来してしまう危険性がある。従って、前記有
機樹脂絶縁層2はその各々の厚みを5μm〜100μm
の範囲としておくことが好ましい。
If the thickness of each of the organic resin insulating layers 2 exceeds 100 μm, the etching processing time becomes longer when the through holes 5 are formed by employing photolithography technology in the organic resin insulating layers 2 to increase the through-holes. It is difficult to form the hole 5 into a desired clear shape, and if it is less than 5 μm, rough surface processing is performed on the upper surface of the organic resin insulating layer 2 to increase the bonding strength of the upper and lower organic resin insulating layers 2. In this case, there is a risk that an unnecessary hole is formed in the organic resin insulating layer 2 and an unnecessary electrical short circuit occurs in the thin film wiring conductors 3 located above and below. Therefore, the organic resin insulating layer 2 has a thickness of 5 μm to 100 μm.
Is preferably set in the range.

【0024】更に前記多層配線部4の各薄膜配線導体3
はその厚みが1μm未満であると各薄膜配線導体3の電
気抵抗が大きなものとなって各薄膜配線導体3に所定の
電気信号を伝達させることが困難なものとなり、また4
0μmを越えると薄膜配線導体3を有機樹脂絶縁層2に
被着させる際に薄膜配線導体3の内部に大きな応力が内
在し、該大きな内在応力によって薄膜配線導体3が有機
樹脂絶縁層2から剥離し易いものとなる。従って、前記
多層配線部4の各薄膜配線導体3の厚みは1μm〜40
μmの範囲としておくことが好ましい。
Further, each thin film wiring conductor 3 of the multilayer wiring portion 4
If the thickness is less than 1 μm, the electrical resistance of each thin-film wiring conductor 3 becomes large, making it difficult to transmit a predetermined electric signal to each thin-film wiring conductor 3.
If the thickness exceeds 0 μm, a large stress is present inside the thin film wiring conductor 3 when the thin film wiring conductor 3 is applied to the organic resin insulating layer 2, and the thin film wiring conductor 3 is separated from the organic resin insulating layer 2 by the large intrinsic stress. It is easy to do. Therefore, the thickness of each thin film wiring conductor 3 of the multilayer wiring part 4 is 1 μm to 40 μm.
It is preferable to keep the range of μm.

【0025】前記有機樹脂絶縁層2と薄膜配線導体3と
を交互に多層に配設して形成される多層配線部4は更
に、最上層の有機樹脂絶縁層2aの上面に薄膜配線導体
3と電気的に接続しているボンディングパッド7が、ま
た最上層の有機樹脂絶縁層2aの下面で前記ボンディン
グパッド7と対向する位置にダミーパッド8が各々、配
設されている。
The multilayer wiring part 4 formed by alternately arranging the organic resin insulating layers 2 and the thin film wiring conductors 3 in a multilayer is further provided on the upper surface of the uppermost organic resin insulating layer 2a. Dummy pads 8 are provided at positions that are electrically connected to the bonding pads 7 and at positions facing the bonding pads 7 on the lower surface of the uppermost organic resin insulating layer 2a.

【0026】前記ボンディングパッド7は、半導体素子
等の能動部品や容量素子、抵抗器等の受動部品の電極が
熱圧着等により接続させ、これによって半導体素子等の
能動部品及び容量素子、抵抗器等の受動部品が薄膜配線
導体3に電気的に接続されることとなる。
The bonding pad 7 is connected to electrodes of active components such as semiconductor elements, capacitors and passive components such as resistors by thermocompression bonding or the like, whereby active components such as semiconductor elements and capacitors, resistors and the like are connected. Are electrically connected to the thin-film wiring conductor 3.

【0027】前記ボンディングパッド7は、薄膜配線導
体2と同じ金属材料、具体的には銅、ニッケル、金、ア
ルミニウム等の金属材料からなり、最上層の有機樹脂絶
縁層2a上に薄膜配線導体3を形成する際に同時に前記
薄膜配線導体3と電気的接続をもって形成される。
The bonding pad 7 is made of the same metal material as the thin film wiring conductor 2, specifically, a metal material such as copper, nickel, gold, aluminum, etc., and is formed on the uppermost organic resin insulating layer 2 a. Is formed at the same time as the thin film wiring conductor 3 is electrically connected.

【0028】また前記最上層の有機樹脂絶縁層2aの下
面でボンディングパッド7と対向する位置にはダミーパ
ッド8が配設されており、該ダミーパッド8はボンディ
ングパッド7に半導体素子等の能動部品や容量素子、抵
抗器等の受動部品の電極を熱圧着等により接続させる
際、最上層の有機樹脂絶縁層2aにへこみが形成される
のを有効に阻止する作用をなし、これによってボンディ
ングパッド7に半導体素子等の能動部品や容量素子、抵
抗器等の受動部品の電極が熱圧着等によって確実、強固
に電気的接続されることとなる。
On the lower surface of the uppermost organic resin insulating layer 2a, a dummy pad 8 is provided at a position facing the bonding pad 7, and the dummy pad 8 is provided on the bonding pad 7 as an active component such as a semiconductor element. When electrodes of passive components such as a capacitor, a resistor, and a resistor are connected by thermocompression bonding or the like, an effect of effectively preventing dents from being formed in the uppermost organic resin insulating layer 2a is achieved. In addition, the electrodes of active components such as semiconductor devices and passive components such as capacitors and resistors are securely and firmly electrically connected by thermocompression bonding or the like.

【0029】前記ダミーパッド8は、例えば、薄膜配線
導体3と同じ金属材料、具体的には銅、ニッケル、金、
アルミニウム等の金属材料により形成され、最上層の有
機樹脂絶縁層2aの下部に配される有機樹脂絶縁層2b
の上面に薄膜配線導体3を形成すると同時に、予め該薄
膜配線導体3とは電気的に分離した金属層領域を形成し
ておくことによって最上層の有機樹脂絶縁層2aの下面
でボンディングパッド7と対向する位置に配設される。
The dummy pad 8 is made of, for example, the same metal material as the thin film wiring conductor 3, specifically, copper, nickel, gold,
An organic resin insulating layer 2b formed of a metal material such as aluminum and disposed below the uppermost organic resin insulating layer 2a
The thin film wiring conductor 3 is formed on the upper surface of the substrate and at the same time, a metal layer region which is electrically separated from the thin film wiring conductor 3 is formed in advance, so that the bonding pad 7 is formed on the lower surface of the uppermost organic resin insulating layer 2a. It is arranged at the position facing.

【0030】かくして本発明の多層配線基板によれば、
最上層の有機樹脂絶縁層2表面に設けたボンディングパ
ッド7に半導体素子等の能動部品や容量素子、抵抗器等
の受動部品を接続させることによって半導体装置や混成
集積回路装置となり、薄膜配線導体3の一部を外部電気
回路に接続させれば前記半導体素子や容量素子等が外部
電気回路に電気的に接続されることとなる。
Thus, according to the multilayer wiring board of the present invention,
By connecting active components such as semiconductor devices, passive components such as capacitors, resistors and the like to the bonding pads 7 provided on the surface of the uppermost organic resin insulating layer 2, a semiconductor device or a hybrid integrated circuit device is obtained. Is connected to an external electric circuit, the semiconductor element, the capacitance element, and the like are electrically connected to the external electric circuit.

【0031】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えば、上述の実施例において
は基板1の上面のみに複数の有機樹脂絶縁層2と複数の
薄膜配線導体3とを交互に積層して形成される多層配線
部4を被着させたが、該多層配線部4を基板1の下面側
のみに設けても、上下の両主面に設けてもよい。
It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention. A multilayer wiring portion 4 formed by alternately laminating a plurality of organic resin insulating layers 2 and a plurality of thin film wiring conductors 3 is applied only on the upper surface, but the multilayer wiring portion 4 is provided only on the lower surface side of the substrate 1. Or on both upper and lower main surfaces.

【0032】[0032]

【発明の効果】本発明の多層配線基板によれば、絶縁基
板上に薄膜形成技術によって配線を形成したことから配
線の微細化が可能となり、配線を極めて高密度に形成す
ることが可能となる。
According to the multilayer wiring board of the present invention, since the wiring is formed on the insulating substrate by the thin film forming technique, the wiring can be miniaturized and the wiring can be formed at an extremely high density. .

【0033】また本発明の多層配線基板によれば、最上
層の有機樹脂絶縁層下面で半導体素子や容量素子等が接
続されるボンディングパッドと対向する位置にダミーパ
ッドを配設したことから、ボンディングパッドに半導体
素子等の能動部品や容量素子、抵抗器等の受動部品の電
極を熱圧着等により接続させる際、最上層の有機樹脂絶
縁層にへこみが形成されるのが前記ダミーパッドの配設
によって有効に阻止され、その結果、ボンディングパッ
ドに半導体素子等の能動部品や容量素子、抵抗器等の受
動部品の電極を確実、強固に電気的接続させることが可
能となる。
Further, according to the multilayer wiring board of the present invention, the dummy pad is provided on the lower surface of the uppermost organic resin insulating layer at a position opposite to the bonding pad to which the semiconductor element and the capacitor element are connected. When connecting electrodes of active components such as semiconductor elements and the like and capacitive components and passive components such as resistors to the pads by thermocompression bonding or the like, a depression is formed in the uppermost organic resin insulating layer. As a result, it is possible to reliably and firmly electrically connect the electrodes of active components such as semiconductor devices and the like to passive components such as capacitors and resistors to the bonding pads.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の多層配線基板の一実施例を示す断面図
である。
FIG. 1 is a sectional view showing one embodiment of a multilayer wiring board of the present invention.

【符号の説明】[Explanation of symbols]

1・・・基板 2・・・有機樹脂絶縁層 3・・・薄膜配線導体 4・・・多層配線部 6・・・スルーホール導体 7・・・ボンディングパッド 8・・・ダミーパッド DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Organic resin insulating layer 3 ... Thin film wiring conductor 4 ... Multilayer wiring part 6 ... Through-hole conductor 7 ... Bonding pad 8 ... Dummy pad

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板上に、有機樹脂絶縁層と薄膜配線導体
とを交互に積層するとともに上下に位置する薄膜配線導
体を有機樹脂絶縁層に設けたスルーホール導体を介して
電気的に接続してなり、最上層の有機樹脂絶縁層上面
に、前記薄膜配線導体と電気的に接続し、外部の電子部
品が接続されるボンデングパッドを設けて成る多層配線
基板であって、前記最上層の有機樹脂絶縁層下面で前記
ボンディングパッドと対向する位置にダミーパッドを配
設したことを特徴とする多層配線基板。
An organic resin insulating layer and a thin-film wiring conductor are alternately laminated on a substrate, and the upper and lower thin-film wiring conductors are electrically connected through through-hole conductors provided in the organic resin insulating layer. A multilayer wiring board comprising a bonding pad electrically connected to the thin-film wiring conductor on the upper surface of the uppermost organic resin insulating layer and connected to an external electronic component. A multilayer wiring board, wherein a dummy pad is provided on a lower surface of an organic resin insulating layer at a position facing the bonding pad.
JP8246067A 1996-09-18 1996-09-18 Multilayer wiring board Pending JPH1092879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8246067A JPH1092879A (en) 1996-09-18 1996-09-18 Multilayer wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8246067A JPH1092879A (en) 1996-09-18 1996-09-18 Multilayer wiring board

Publications (1)

Publication Number Publication Date
JPH1092879A true JPH1092879A (en) 1998-04-10

Family

ID=17142980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8246067A Pending JPH1092879A (en) 1996-09-18 1996-09-18 Multilayer wiring board

Country Status (1)

Country Link
JP (1) JPH1092879A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010660A1 (en) * 2005-07-20 2007-01-25 Sharp Kabushiki Kaisha Wiring board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007010660A1 (en) * 2005-07-20 2007-01-25 Sharp Kabushiki Kaisha Wiring board

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