JPH1092858A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH1092858A
JPH1092858A JP8239635A JP23963596A JPH1092858A JP H1092858 A JPH1092858 A JP H1092858A JP 8239635 A JP8239635 A JP 8239635A JP 23963596 A JP23963596 A JP 23963596A JP H1092858 A JPH1092858 A JP H1092858A
Authority
JP
Japan
Prior art keywords
adhesive tape
bonding
inner leads
inner lead
wire bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8239635A
Other languages
Japanese (ja)
Inventor
Nobuhisa Ishikawa
信久 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8239635A priority Critical patent/JPH1092858A/en
Priority to CN97120681A priority patent/CN1181620A/en
Publication of JPH1092858A publication Critical patent/JPH1092858A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve bonding position precision by preventing dislocation of the bonding areas for inner leads when wire bonding is carried out. SOLUTION: When a semiconductor device is mounted on a die pad (mounting location) 13 surrounded by the tips of a plurality of inner leads 11, wires are bonded to bonding areas 11a of the inner leads 11 in a state wherein the inner leads are clamped. In this case, an adhesive tape is applied beforehand to the clamping areas 11b (clamping positions) for the inner leads in a state wherein the adhesive tape bestrides at least a plurality of inner leads arranged side by side, and wires are bonded to the bonding areas 11a in a state wherein the inner leads 11 are clamped via the adhesive tape 13.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子のパッ
ケージングに際して行われるワイヤボンディング方法に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method performed when packaging a semiconductor device.

【0002】[0002]

【従来の技術】半導体素子のパッケージングに際して行
われる工程としては、リードフレームのインナーリード
にワイヤをボンディングするワイヤボンディング工程が
知られている。図4に示すように従来においてインナー
リード51は、リードフレーム50に複数形成されてお
り、その先端が半導体素子を実装するためのダイパット
52を囲んでいる。このインナーリード51の先端側
は、銀(Ag)や金(Au)でメッキされてワイヤボン
ディングエリア(以下、単にボンディングエリアと記
す)51aとなっている。またボンディングエリア51
aよりも後端側が、ワイヤボンディング時にインナーリ
ード51をクランプするための治具押さえ位置(以下、
クランプエリアと記す)51bとされている。
2. Description of the Related Art As a process performed at the time of packaging a semiconductor element, a wire bonding process of bonding a wire to an inner lead of a lead frame is known. As shown in FIG. 4, in the related art, a plurality of inner leads 51 are formed on a lead frame 50, and the tips surround a die pad 52 for mounting a semiconductor element. The tip side of the inner lead 51 is plated with silver (Ag) or gold (Au) to form a wire bonding area (hereinafter simply referred to as a bonding area) 51a. The bonding area 51
The rear end side of a is a jig holding position (hereinafter, referred to as a jig holding position) for clamping the inner lead 51 during wire bonding.
(Referred to as a clamp area) 51b.

【0003】さらにインナーリード51には、クランプ
エリア51bよりも後端側にテープ53が貼着されてい
る。テープ53は、インナーリード51のボンディング
エリア51aのばたつきを防止するためのもので、複数
のインナーリード51間に跨がった状態でダイパット5
2の周方向に沿って貼着されている。
[0003] Further, a tape 53 is attached to the inner lead 51 at a rear end side of the clamp area 51b. The tape 53 is used to prevent the bonding area 51a of the inner lead 51 from fluttering.
2 are attached along the circumferential direction.

【0004】ところで近年では、実装する半導体素子の
高集積化とともに必要なインナーリード数が増大してお
り、これに伴ってインナーリードが極微細に加工されて
いる。例えば厚さが0.125mmと薄く、図6に示す
ように先端の幅wが0.1mmと細く、隣接するインナ
ーリード51との間隔pが0.08mmと狭いといった
具合である。一方、ワイヤボンディング時に使用するボ
ンディング治具であるキャピラリをボンディングエリア
51aに押し付けた際には、例えば80μm程度の直径
を有する円形状のエリア51cが必要となる(図6参
照)。
In recent years, the number of required inner leads has been increased with the increase in the degree of integration of the semiconductor element to be mounted, and accordingly, the inner leads have been processed to be extremely fine. For example, the thickness is as thin as 0.125 mm, the width w of the tip is as narrow as 0.1 mm as shown in FIG. 6, and the distance p between the adjacent inner leads 51 is as narrow as 0.08 mm. On the other hand, when a capillary, which is a bonding jig used for wire bonding, is pressed against the bonding area 51a, a circular area 51c having a diameter of, for example, about 80 μm is required (see FIG. 6).

【0005】したがって従来、ワイヤボンディングを行
うにあっては、ボンディングエリア51aの位置ずれを
防止するために、図5および図6に示すごとくワークク
ランプ61でインナーリード51のクランプエリア51
bをヒートブロック62へと押し付けてクランプし、こ
の状態で熱、圧力、超音波振動等によってボンディング
エリア51aにワイヤをボンディングしている。
Therefore, conventionally, in performing wire bonding, in order to prevent a displacement of the bonding area 51a, as shown in FIGS.
b is pressed against the heat block 62 and clamped, and in this state, a wire is bonded to the bonding area 51a by heat, pressure, ultrasonic vibration, or the like.

【0006】[0006]

【発明が解決しようとする課題】ところが、インナーリ
ードのクランプに使用するワーククランプ、ヒートブロ
ックはそれぞれ、インナーリードに接触する面が樹脂、
金属からなっており、またインナーリードも金属で形成
されている。このため、インナーリードをワーククラン
プとヒートブロックとによってクランプしてもこれらの
間に働く摩擦抵抗が小さい。したがって、従来のワイヤ
ボンディング方法では、インナーリードをクランプして
いるにもかかわらず、ワイヤボンディング時にキャピラ
リをボンディングエリアに押し付けた際の衝撃や超音波
振動によって、図6の二点鎖線で示すようにワイヤボン
ディングしているインナーリード51の隣のインナーリ
ード51の先端が横滑りして容易に位置ずれし、ボンデ
ィング位置精度が悪化するといった不具合が発生してい
る。
However, the work clamp and the heat block used for clamping the inner lead each have a resin contact surface and a heat block.
It is made of metal, and the inner leads are also made of metal. For this reason, even if the inner lead is clamped by the work clamp and the heat block, the frictional resistance acting between them is small. Therefore, according to the conventional wire bonding method, despite the inner lead being clamped, the impact or ultrasonic vibration when the capillary is pressed against the bonding area during wire bonding as shown by a two-dot chain line in FIG. The tip of the inner lead 51 adjacent to the wire-bonded inner lead 51 slides sideways and easily displaces, resulting in a problem that the bonding position accuracy is deteriorated.

【0007】なお通常、ワイヤボンディング時には、ま
ず全てのインナーリード51のボンディングエリア51
aの位置を画像処理等で認識し、この位置認識を基にワ
イヤボンディングが行われる。したがって、位置認識後
のインナーリード51のボンディングエリア51aの位
置ずれは、ワイヤボンディング精度に重大な影響をもた
らすことになる。
Usually, at the time of wire bonding, first, the bonding area 51 of all the inner leads 51 is
The position a is recognized by image processing or the like, and wire bonding is performed based on this position recognition. Therefore, the displacement of the bonding area 51a of the inner lead 51 after the position recognition has a significant effect on the wire bonding accuracy.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
の本発明に係るワイヤボンディング方法は、複数のイン
ナーリードの先端で囲まれた実装位置に半導体素子を実
装するに際し、インナーリードをクランプした状態でこ
のインナーリードのボンディングエリアにワイヤをボン
ディングするにあたり、予め、インナーリードにおける
クランプの位置に、少なくとも隣り合う複数のインナー
リード間に跨がった状態で接着テープを貼着しておき、
接着テープを介してインナーリードをクランプした状態
でボンディングエリアにワイヤをボンディングすること
を特徴とする。
According to the wire bonding method of the present invention for solving the above-mentioned problems, when mounting a semiconductor element at a mounting position surrounded by the tips of a plurality of inner leads, the inner leads are clamped. In bonding the wire to the bonding area of the inner lead in the state, in advance, at the position of the clamp in the inner lead, an adhesive tape is applied in a state of straddling at least a plurality of adjacent inner leads,
A wire is bonded to the bonding area while the inner lead is clamped via an adhesive tape.

【0009】本発明では、予めクランプの位置に接着テ
ープを貼着していることから、予めインナーリードが固
定される。そして、さらに接着テープを介してインナー
リードをクランプした状態でワイヤボンディングを行っ
ているため、インナーリードが一層強固に固定された状
態でワイヤボンディングが行われる。よって、ワイヤボ
ンディング時に、ボンディング治具をボンディングエリ
アに押し付けた際の衝撃や超音波振動を受けても、ワイ
ヤボンディングしているインナーリードの隣のインナー
リードの先端が横滑りせず、ボンディングエリアが位置
ずれしない。
In the present invention, since the adhesive tape is previously adhered to the position of the clamp, the inner lead is fixed in advance. Further, since the wire bonding is performed while the inner lead is clamped via the adhesive tape, the wire bonding is performed with the inner lead fixed more firmly. Therefore, even when the bonding jig is pressed against the bonding area during wire bonding, the tip of the inner lead adjacent to the inner lead to which the wire bonding is performed does not slide, and the bonding area is positioned even when subjected to the shock or ultrasonic vibration. Does not shift.

【0010】[0010]

【発明の実施の形態】次に、本発明に係るワイヤボンデ
ィング方法の実施形態を図面に基づいて説明する。図1
(a)、(b)は一実施形態に係るワイヤボンディング
方法を説明するための図であり、図2は図1(a)の要
部断面図、図3は図1(b)の平面図である。本発明の
ワイヤボンディング方法は、インナーリードをクランプ
した状態でこのインナーリードのボンディングエリアに
ワイヤをボンディングする方法である。
Next, an embodiment of a wire bonding method according to the present invention will be described with reference to the drawings. FIG.
2A and 2B are views for explaining a wire bonding method according to one embodiment, FIG. 2 is a sectional view of a main part of FIG. 1A, and FIG. 3 is a plan view of FIG. It is. The wire bonding method of the present invention is a method of bonding a wire to a bonding area of an inner lead while clamping the inner lead.

【0011】本実施形態では、ワイヤボンディングに先
立ち、図1(a)に示すごとくリードフレーム10のイ
ンナーリード11に接着テープ13を貼着しておく。こ
こで使用するリードフレーム10は、複数のインナーリ
ード11を有しており、これらインナーリード11の先
端によって囲まれた半導体素子用の実装位置に、ダイパ
ット12が設けられているものである。またインナーリ
ード11の先端側に、AgやAuでメッキされてボンデ
ィングエリア11aが形成されており、インナーリード
11のボンディングエリア11aよりも後端側が、ワイ
ヤをボンディングする際にインナーリード11をクラン
プするための位置(以下、クランプエリアと記す)11
bとなっている。すなわち、ダイパット12の周方向に
沿って帯状にクランプエリア11bが設けられている。
In this embodiment, prior to wire bonding, an adhesive tape 13 is attached to inner leads 11 of a lead frame 10 as shown in FIG. The lead frame 10 used here has a plurality of inner leads 11, and a die pad 12 is provided at a mounting position for a semiconductor element surrounded by the tips of the inner leads 11. Further, a bonding area 11a is formed by plating with Ag or Au on the front end side of the inner lead 11, and the rear end side of the inner lead 11 beyond the bonding area 11a clamps the inner lead 11 when bonding a wire. Position (hereinafter referred to as a clamp area) 11
b. That is, the clamp area 11 b is provided in a belt shape along the circumferential direction of the die pad 12.

【0012】本実施形態では、上記のようなインナーリ
ード11のクランプエリア11bに、予め接着テープ1
3を貼着しておく。例えばボンディングエリア11aが
インナーリード11の先端から後端側に向けて1mm程
度形成されており、インナーリード11の先端より1.
1mm〜1.5mm程度離れた位置からがクランプエリ
ア11bとされている場合には、接着テープ13の幅方
向の一端がインナーリード11の先端より1.1mm〜
1.5mm程度の範囲に位置するよう接着テープ13を
貼着しておく。またこのとき、図1(a)に示すように
複数のインナーリード11の全てに跨がった状態でダイ
パット12の周方向に沿って連続して接着テープ13を
設けておく。
In this embodiment, the adhesive tape 1 is previously provided in the clamp area 11b of the inner lead 11 as described above.
3 is pasted. For example, a bonding area 11a is formed about 1 mm from the front end of the inner lead 11 to the rear end side.
When the clamp area 11 b is located from a position about 1 mm to 1.5 mm apart, one end of the adhesive tape 13 in the width direction is 1.1 mm to the tip of the inner lead 11.
The adhesive tape 13 is stuck so as to be located in a range of about 1.5 mm. At this time, as shown in FIG. 1A, the adhesive tape 13 is provided continuously along the circumferential direction of the die pad 12 in a state of straddling all of the plurality of inner leads 11.

【0013】さらに接着テープ13は、後述する理由か
ら、インナーリード11をクランプする際に使用するワ
ーククランプ61の幅W1 よりも広い幅W2 になるよう
設ける(図3参照)。例えばワーククランプ61の幅W
1 が1.4mm程度である場合、接着テープ13の幅W
2 を2mm程度とする。なお、クランプの際に、ワーク
クランプ61の幅方向の略中心をクランプエリア11b
の略中心に合わせる場合、クランプエリア11bの幅方
向の略中心と接着テープ13の幅方向の略中心とが略一
致するように接着テープ13を設けることが好ましい。
Furthermore the adhesive tape 13, for reasons to be described later, provided so as to be wider W 2 than the width W 1 of the work clamp 61 for use in clamping the inner lead 11 (see FIG. 3). For example, the width W of the work clamp 61
When 1 is about 1.4 mm, the width W of the adhesive tape 13 is
2 is about 2 mm. At the time of clamping, the approximate center of the width direction of the work clamp 61 is set to the clamp area 11b.
It is preferable to provide the adhesive tape 13 such that the approximate center of the clamp area 11b in the width direction substantially coincides with the approximate center of the adhesive tape 13 in the width direction.

【0014】接着テープ13としては、絶縁性を有しか
つワイヤボンディング時の熱に対して耐性のある材料、
例えばポリイミド等の接着テープ等を用いることができ
る。また接着テープ13は、インナーリード11に接着
する面と反対の側の面において接着性を有しないものと
なっている。接着テープ13を貼着することによって、
図2に示すようにインナーリード11は動かないように
固定される。
The adhesive tape 13 is made of a material having an insulating property and being resistant to heat during wire bonding.
For example, an adhesive tape of polyimide or the like can be used. The adhesive tape 13 has no adhesive property on the surface opposite to the surface to be adhered to the inner lead 11. By attaching the adhesive tape 13,
As shown in FIG. 2, the inner lead 11 is fixed so as not to move.

【0015】接着テープ13を貼着した後は、次いで図
1(b)および図3に示すように、接着テープ13の直
上からワーククランプ61でインナーリード11をヒー
トブロック62へと押し付けてクランプする。そして、
この状態でキャピラリ等のボンディング治具を用い、
熱、圧力、超音波振動等によってボンディングエリア1
1aにワイヤをボンディングする。
After the adhesive tape 13 is adhered, the work clamp 61 presses the inner lead 11 against the heat block 62 from immediately above the adhesive tape 13 as shown in FIGS. . And
In this state, using a bonding jig such as a capillary,
Bonding area 1 by heat, pressure, ultrasonic vibration, etc.
A wire is bonded to 1a.

【0016】ここで、前述したように接着テープ13の
幅W2 をワーククランプの幅W1 よりも広くするのは、
いずれの箇所においても接着テープ13の直上位置をワ
ーククランプ61が確実にクランプするようにするため
である。またこのとき、ワーククランプ61の幅方向の
略中心と接着テープ13の幅方向の略中心とを略一致さ
せておくと、ワーククランプ61の幅方向の両端それぞ
れから接着テープ13の幅方向の端部まで余裕がある状
態となる。この結果、たとえワーククランプ61のクラ
ンプ位置がずれても、インナーリード11が接着テープ
13を介してワーククランプ61で確実にクランプされ
ることになる。よって、ワーククランプ61の幅方向の
略中心をクランプエリア11bの略中心に合わせてクラ
ンプする場合には、クランプエリア11bの幅方向の略
中心と接着テープ13の幅方向の略中心とを略一致させ
ることが好ましいのである。
Here, as described above, the reason why the width W 2 of the adhesive tape 13 is made larger than the width W 1 of the work clamp is as follows.
This is to ensure that the work clamp 61 securely clamps the position immediately above the adhesive tape 13 at any point. Also, at this time, if the approximate center of the width direction of the work clamp 61 and the approximate center of the width direction of the adhesive tape 13 are made to substantially coincide with each other, both ends of the work clamp 61 in the width direction are respectively adjusted. The part is in a state where there is room. As a result, even if the clamp position of the work clamp 61 is shifted, the inner lead 11 is securely clamped by the work clamp 61 via the adhesive tape 13. Therefore, when the clamp is performed with the approximate center of the work clamp 61 in the width direction substantially aligned with the approximate center of the clamp area 11b, the approximate center of the clamp area 11b in the width direction substantially coincides with the approximate center of the adhesive tape 13 in the width direction. It is preferable to make it.

【0017】また、接着テープ13は、ワイヤボンディ
ング工程後もモールド工程の終了までそのままインナー
リード11に貼着した状態にしておく。つまり、接着テ
ープ13はリードフレーム10に実装された半導体素子
とともにモールドされることになる。この接着テープ1
3は絶縁性であるため、半導体素子とともにモールドさ
れても得られたパッケージに影響を与えない。
The adhesive tape 13 is kept attached to the inner lead 11 after the wire bonding step until the end of the molding step. That is, the adhesive tape 13 is molded together with the semiconductor element mounted on the lead frame 10. This adhesive tape 1
Since 3 is insulating, it does not affect the obtained package even if it is molded together with the semiconductor element.

【0018】上記のように、本実施形態のワイヤボンデ
ィング方法では、クランプエリア11bに予め接着テー
プ13を設け、この接着テープ13の直上からワークク
ランプ61でクランプした状態でインナーリード11に
ワイヤをボンディングしている。このため、接着テープ
13によるインナーリード11の先端側の固定が、ワー
ククランプ61によってさらに強固となった状態でワイ
ヤボンディングが行われることになる。したがって、ワ
イヤボンディング時に、ボンディング治具をボンディン
グエリア11bに押し付けた際の衝撃や超音波振動を受
けても、ワイヤボンディングしているインナーリード1
1の隣のインナーリード11の先端が横滑りせず、ボン
ディングエリア11aの位置ずれを防止できる。
As described above, in the wire bonding method of the present embodiment, the adhesive tape 13 is provided in the clamp area 11b in advance, and the wire is bonded to the inner lead 11 while being clamped by the work clamp 61 directly above the adhesive tape 13. doing. For this reason, the wire bonding is performed in a state where the fixing of the tip side of the inner lead 11 by the adhesive tape 13 is further strengthened by the work clamp 61. Therefore, even when the bonding jig is pressed against the bonding area 11b during the wire bonding, the inner lead 1 having the wire bonded is not affected by the shock or the ultrasonic vibration.
The tip of the inner lead 11 next to 1 does not slide sideways, and the displacement of the bonding area 11a can be prevented.

【0019】また、接着テープ13の直上位置からイン
ナーリード11をクランプするので、インナーリード1
1が均一にクランプされる。その結果、均一にクランプ
されずにインナーリード11の先端が上下にばたついて
しまい、ワイヤボンディングの信頼性が低下する等の不
具合を防止することができる。さらに、インナーリード
11に予め接着テープ13を貼着しておくので、ワイヤ
ボンディング時におけるボンディングエリア11aのば
たつきを防止できる。また接着テープ13はモールド工
程までインナーリード11から剥がさないため、リード
フレーム10の作製時からインナーリード11に貼着し
た場合には、リードフレーム10の作製時からモールド
工程までボンディングエリア11aのばたつきを防止で
きることになる。
Further, since the inner leads 11 are clamped from a position directly above the adhesive tape 13, the inner leads 1 are clamped.
1 is clamped uniformly. As a result, it is possible to prevent such a problem that the tip of the inner lead 11 is fluttered up and down without being uniformly clamped and the reliability of wire bonding is reduced. Furthermore, since the adhesive tape 13 is attached to the inner leads 11 in advance, it is possible to prevent the bonding area 11a from fluttering during wire bonding. Further, since the adhesive tape 13 is not peeled off from the inner lead 11 until the molding process, when the adhesive tape 13 is adhered to the inner lead 11 from the time of manufacturing the lead frame 10, the flapping of the bonding area 11 a from the time of manufacturing the lead frame 10 to the molding process. Can be prevented.

【0020】また接着テープ13を剥がさないため、半
導体素子のパッケージングに本実施形態のワイヤボンデ
ィング方法を用いても、パッケージングにおける工程数
が増加しない。このように本実施形態のワイヤボンディ
ング方法によれば、ボンディング位置精度を向上できる
ので、高精度のワイヤボンディングを実現でき、ワイヤ
とインナーリード11との接続の信頼性が高い半導体パ
ッケージを得ることができる。
Since the adhesive tape 13 is not peeled off, the number of steps in the packaging does not increase even if the wire bonding method of the present embodiment is used for the packaging of the semiconductor element. As described above, according to the wire bonding method of the present embodiment, since the bonding position accuracy can be improved, high-precision wire bonding can be realized, and a semiconductor package having high reliability of connection between the wires and the inner leads 11 can be obtained. it can.

【0021】なお、本実施形態では、本発明における接
着テープを、複数のインナーリードの全てに跨がった状
態でダイパットの周方向に沿って連続して設けた場合に
ついて述べたが、この例に限定されない。接着テープ
は、少なくとも隣り合う複数のインナーリード間に跨が
るように貼着されていればよく、例えばダイパットの一
辺あるいは二辺に対応する毎に、複数のインナーリード
間に跨がって設けることも可能である。あるいは両隣の
3つのインナーリード間に跨がって設けてもよい。
In the present embodiment, the case where the adhesive tape of the present invention is provided continuously along the circumferential direction of the die pad while straddling all of the plurality of inner leads has been described. It is not limited to. The adhesive tape may be attached so as to straddle at least between a plurality of adjacent inner leads. For example, each time the adhesive tape corresponds to one or two sides of a die pad, the adhesive tape is provided so as to straddle between the plurality of inner leads. It is also possible. Alternatively, it may be provided so as to straddle between the three inner leads on both sides.

【0022】[0022]

【発明の効果】本発明に係るワイヤボンディング方法で
は、予めクランプの位置に接着テープを貼着し、この接
着テープを介してインナーリードをクランプすることに
よりインナーリードを一層強固に固定した状態でワイヤ
ボンディングを行っている。このため、ワイヤボンディ
ング時に、ボンディング治具をボンディングエリアに押
し付けた際の衝撃や超音波振動によりインナーリードが
横滑してボンディングエリアが位置ずれするのを防止す
ることができる。したがって、本発明のワイヤボンディ
ング方法によれば、ボンディング位置精度を向上できる
ので、高精度のワイヤボンディングを実現でき、ワイヤ
とインナーリードとの接続の信頼性が高い半導体パッケ
ージを得ることができる。
According to the wire bonding method according to the present invention, an adhesive tape is pasted to a position of a clamp in advance, and the inner lead is clamped via the adhesive tape so that the inner lead is fixed more firmly. Bonding is being performed. For this reason, at the time of wire bonding, it is possible to prevent the inner lead from sliding laterally due to the impact or ultrasonic vibration when the bonding jig is pressed against the bonding area, thereby preventing the bonding area from being displaced. Therefore, according to the wire bonding method of the present invention, since the bonding position accuracy can be improved, high-precision wire bonding can be realized, and a semiconductor package having high reliability in connection between the wires and the inner leads can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るワイヤボンディング方法の一実施
形態を説明する図であり、(a)は接着テープの貼着状
態を示す平面図、(b)はワイヤボンディング時におけ
るクランプ状態を示す要部断面図である。
FIGS. 1A and 1B are diagrams illustrating an embodiment of a wire bonding method according to the present invention. FIG. 1A is a plan view showing a state in which an adhesive tape is adhered, and FIG. It is a fragmentary sectional view.

【図2】図1(a)の要部断面図である。FIG. 2 is a sectional view of a main part of FIG.

【図3】図1(b)の平面図である。FIG. 3 is a plan view of FIG. 1 (b).

【図4】従来のインナーリードの一例を示す要部平面図
である。
FIG. 4 is a plan view of a main part showing an example of a conventional inner lead.

【図5】従来のワイヤボンディング時におけるクランプ
状態を示す断面図である。
FIG. 5 is a cross-sectional view showing a clamped state during conventional wire bonding.

【図6】本発明の課題を説明する図である。FIG. 6 is a diagram illustrating a problem of the present invention.

【符号の説明】[Explanation of symbols]

11 インナーリード 11a ボンディングエリア 11b クランプエリア 13 接着テープ 61
ワーククランプ
11 inner lead 11a bonding area 11b clamp area 13 adhesive tape 61
work clamp

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 複数のインナーリードの先端で囲まれた
実装位置に半導体素子を実装するに際し、前記インナー
リードをクランプした状態でこのインナーリードのボン
ディングエリアにワイヤをボンディングするにあたり、 予め、前記インナーリードにおける前記クランプの位置
に、少なくとも隣り合う複数のインナーリード間に跨が
った状態で接着テープを貼着しておき、 前記接着テープを介して前記インナーリードをクランプ
した状態で前記ボンディングエリアにワイヤをボンディ
ングすることを特徴とするワイヤボンディング方法。
When a semiconductor element is mounted at a mounting position surrounded by the tips of a plurality of inner leads, a wire is bonded to a bonding area of the inner lead in a state where the inner lead is clamped. At the position of the clamp in the lead, an adhesive tape is stuck at least in a state of straddling between a plurality of adjacent inner leads, and the inner lead is clamped through the adhesive tape to the bonding area. A wire bonding method comprising bonding a wire.
JP8239635A 1996-09-11 1996-09-11 Wire bonding method Pending JPH1092858A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8239635A JPH1092858A (en) 1996-09-11 1996-09-11 Wire bonding method
CN97120681A CN1181620A (en) 1996-09-11 1997-09-11 Method for wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8239635A JPH1092858A (en) 1996-09-11 1996-09-11 Wire bonding method

Publications (1)

Publication Number Publication Date
JPH1092858A true JPH1092858A (en) 1998-04-10

Family

ID=17047651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8239635A Pending JPH1092858A (en) 1996-09-11 1996-09-11 Wire bonding method

Country Status (2)

Country Link
JP (1) JPH1092858A (en)
CN (1) CN1181620A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100888885B1 (en) 2007-04-19 2009-03-17 삼성전자주식회사 Lead frame and semiconductor apparatus having the same
WO2009111818A1 (en) * 2008-03-12 2009-09-17 Silverbrook Research Pty Ltd Method of adhering wire bond loops to reduce loop height
WO2009111817A1 (en) * 2008-03-12 2009-09-17 Silverbrook Research Pty Ltd Electronic device with wire bonds secured to the adhesive surface

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114755852B (en) * 2022-04-21 2024-03-29 南京京东方显示技术有限公司 Backboard, backboard processing method, backlight module and display device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100888885B1 (en) 2007-04-19 2009-03-17 삼성전자주식회사 Lead frame and semiconductor apparatus having the same
US8188582B2 (en) 2007-04-19 2012-05-29 Samsung Electronics Co., Ltd. Lead frame, semiconductor device using the lead frame, and methods of manufacturing the same
US7741720B2 (en) 2007-09-25 2010-06-22 Silverbrook Research Pty Ltd Electronic device with wire bonds adhered between integrated circuits dies and printed circuit boards
US7875504B2 (en) 2007-09-25 2011-01-25 Silverbrook Research Pty Ltd Method of adhering wire bond loops to reduce loop height
WO2009111818A1 (en) * 2008-03-12 2009-09-17 Silverbrook Research Pty Ltd Method of adhering wire bond loops to reduce loop height
WO2009111817A1 (en) * 2008-03-12 2009-09-17 Silverbrook Research Pty Ltd Electronic device with wire bonds secured to the adhesive surface

Also Published As

Publication number Publication date
CN1181620A (en) 1998-05-13

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