JPH1084066A - Lead frame for resin-encapsulated semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame for resin-encapsulated semiconductor device having a structure in which encapsulating resin remaining in a gate runner part after the completion of a resin encapsulation process, is removed easily. SOLUTION: A lead frame is so constituted that an Ni layer, a Pd layer, and an Au layer are formed on Cu material constituting its frame. The lead frame comprises a die pad 1, suspending leads 2, inner leads 3, tie bars 4, outer leads 5, and a frame 6. The gate runner part 7 has no Au layer. In this part, the Pd layer whose adhesion to encapsulating resin s poor is exposed, so that the encapsulation resin which remains in the gate runner 7 can be easily removed only by punching with a weak force from the back of the pilot holes 8, after completion of resin encapsulation process. Therefore, the deformation of the lead frame can be prevented reliably without adding any other member to it.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for a resin-sealed semiconductor device having a structure capable of easily removing a sealing resin remaining in a gate runner portion.

[0002]

2. Description of the Related Art Conventionally, a lead frame used in a resin-encapsulated semiconductor device has an adhesive property with a sealing resin in order to prevent moisture from entering through a gap between the sealing resin lead frames. Is required. Corrosion resistance is also required to prevent corrosion due to moisture. In order to satisfy such a demand, a lead frame whose uppermost layer is plated with gold is often used.

Hereinafter, the structure of a conventional lead frame for a resin-sealed semiconductor device will be described with reference to the drawings.

FIG. 7 is a plan view showing a conventional lead frame for a resin-encapsulated semiconductor device. As shown in FIG. 1, a conventional lead frame for a resin-encapsulated semiconductor device includes a die pad 1 and a suspension lead 2 supporting the die pad 1.
And a tie bar 4 connecting the inner leads 3, an outer lead 5 connected to the inner leads 3, and a frame 6 for supporting the above parts from outside. A region extending along the outer edge of the frame 6 after extending outward from a region corresponding to the base of the suspension lead 2 of the lead frame flows sealing resin to the cavity in the resin sealing step. (A region surrounded by a broken line in the figure). Further, the gate runner section 6 has a pilot hole 8 for positioning and removing the sealing resin. Here, in the conventional lead frame for a resin-encapsulated semiconductor device, the base metal constituting the main body is made of copper (Cu) (copper-based alloy), and a base plating layer is formed on the main body. Nickel (Ni) layer and palladium (Pd)
A layer and an outermost gold (Au) layer are sequentially formed.

When a semiconductor device is manufactured using such a resin-encapsulated semiconductor device lead frame, usually,
The following steps are performed.

First, a semiconductor element is mounted on a die pad 1 of a lead frame for a resin-encapsulated semiconductor device, and the semiconductor element is electrically connected to an inner lead 3 of the lead frame by a thin metal wire. A region including the inner lead 3 and the suspension lead 2 is sealed with a sealing resin. The injection of the sealing resin is performed through the gate runner 7 of the lead frame, and the sealing resin remains in the gate runner 7 after the resin sealing step. Then, after that, the sealing resin remaining in the gate runner portion 7 of the lead frame is peeled off, for example, by punching from the back side of the pilot hole 8, and marking, lead cutting, and lead forming in the next step are performed.

[0007]

However, the conventional lead frame for a resin-encapsulated semiconductor device has the following problems.

That is, a Ni layer, a Pd layer, and an Au layer are sequentially formed on the surface of a lead frame made of a Cu material, and the outermost layer is an Au layer. Due to the presence of the Au layer, the adhesion to the sealing resin is improved, and there is an advantage that the invasion of moisture can be prevented. On the other hand, in the gate runner portion 7, the remaining sealing resin is removed in the subsequent steps. It took time and effort to remove it. This is because the adhesion between Au and the epoxy resin sealing resin is good. In order to remove the sealing resin in a state where the sealing resin remaining in the gate runner portion and the lead frame are firmly adhered to each other, the degree of punching from the back surface of the pilot hole 8 must be increased. However, the lead frame itself may be deformed by the excessive punching force.

Therefore, conventionally, there has been a case in which a means for attaching a resin tape having poor adhesion to the sealing resin or forming a metal layer having poor adhesion to the gate runner portion has been used. As described above, the addition of another member to the lead frame causes a limitation in manufacturing, and may increase manufacturing cost, manufacturing time, and the like.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has been made to reduce the adhesive force between a sealing resin remaining in a gate runner portion and a lead frame without adding another member to the lead frame. By taking measures to weaken,
An object of the present invention is to provide a resin-encapsulated semiconductor device lead frame having a configuration in which the encapsulating resin can be easily removed after the encapsulating step.

[0011]

According to the present invention, there is provided a resin-encapsulated semiconductor device lead frame according to the present invention.

The means taken by the first or second resin-encapsulated semiconductor device lead frame of the present invention is to eliminate the gold layer having a large adhesive force with the encapsulation resin in the gate runner portion or to eliminate the gold layer. The goal is to reduce the prevalence.

More specifically, a first lead frame for a resin-encapsulated semiconductor device according to the present invention is provided on a main body made of a copper-based material.
A lead frame for a resin-encapsulated semiconductor device in which a palladium layer and a gold layer are sequentially formed, wherein the lead frame includes a sealing portion sealed with a sealing resin, and a sealing portion up to the sealing portion. A gate runner for guiding the resin,
The lead layer has a structure in which the gold layer does not exist in a region including at least a part of the gate runner portion.

According to a second aspect of the present invention, there is provided a lead frame for a resin-encapsulated semiconductor device, wherein a nickel layer, a palladium layer, and a gold layer are formed on a main body made of a copper-based material. A lead frame for a resin-encapsulated semiconductor device formed in order, wherein the lead frame includes a sealing portion sealed by a sealing resin, and a gate for guiding the sealing resin to the sealing portion. A region including at least a part of the gate runner portion in the lead frame, the gold layer is formed coarsely.

According to the first or second aspect, in the manufacturing process of the semiconductor device, the adhesion between the sealing resin remaining in the gate runner portion and the lead frame when the resin sealing step is completed is reduced, so that the sealing is performed. Removal of resin for use becomes easy.
For example, when the lead frame is provided with holes for punching, the sealing resin can be removed with a punching force that does not deform the lead frame.

In addition, since a new member is not separately added to the lead frame in order to reduce the adhesion, the structure is not restricted by the production and is suitable for the production conditions. For example, it is possible to reduce the manufacturing time in the process by removing or partially roughening the plating layer, rather than newly plating a material having weak adhesion to the sealing resin. In particular, in mass production, a large number of lead frames are processed, so that the effect of tact per process is large. In the case of a lead frame having a single plating layer, such a measure may cause a problem,
As in the present invention, in the case of having a laminated plating structure, no problem occurs even if the gold layer in the region to be finally removed is removed (or partially removed). That is, in a lead frame having a metal film laminated on a main body, such a means can be conceived for the first time.

In the third aspect of the present invention, the means taken by the resin-molded semiconductor device lead frame is that the sealing resin and the lead frame are separated from each other by utilizing the heat shrinkage generated after the resin-sealing step is completed. It is to make the structure easy to do.

According to a third aspect of the present invention, a nickel layer, a palladium layer, and a gold layer are formed on a body made of a copper-based material. A lead frame for a resin-encapsulated semiconductor device formed in order, wherein the lead frame includes a sealing portion sealed by a sealing resin, and a gate for guiding the sealing resin to the sealing portion. A region including at least a part of the gate runner portion in the lead frame has a structure in which a side surface is formed with a concavo-convex portion having a forward tapered shape.

As a result, the following operation occurs. After completion of the resin sealing step, if the resin is thermally contracted due to a decrease in temperature, the degree of contraction of the lead frame is greater than that of the remaining sealing resin due to the difference in the coefficient of thermal expansion. And
Due to this thermal stress, a force for separating the sealing resin from the lead frame is generated on the side surface of the concave and convex portion having the forward taper, and the sealing resin that has penetrated the concave and convex portion is peeled off.
Therefore, the structure is such that the sealing resin remaining by punching or the like can be easily removed. In addition, since a new member is not separately added to the lead frame in order to reduce the adhesion, the structure is suitable for the manufacturing conditions without being restricted by the manufacturing.

In the third resin-encapsulated semiconductor device lead frame, the configuration of claim 1 or 2 can be added.

That is, as described in claim 4, in claim 3, a structure in which the gold layer is not formed in a region including at least a part of the gate runner portion can be provided.

Also, as described in claim 5,
According to a third aspect, in the region including at least a part of the gate runner portion, the structure may be such that the gold layer is formed roughly.

[0023]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a lead frame for a resin-sealed semiconductor device according to an embodiment of the present invention.

(First Embodiment) First, a lead frame for a resin-sealed semiconductor device according to a first embodiment will be described with reference to FIGS. 1 and 2. FIG.

FIG. 1 is a plan view showing a lead frame for a resin-sealed semiconductor device according to the first embodiment. As shown in the figure, a lead frame for a resin-encapsulated semiconductor device according to the present embodiment includes a die pad 1 and the die pad 1.
, A tie bar 4 connecting between the inner leads, an outer lead 5 connected to the inner lead 3, and a frame 6 supporting the above parts from outside. Become. Then, a region (hatched region in the figure) extending outward from a region corresponding to the base of the suspension lead 2 of the lead frame and extending along the outer edge of the frame 6 is subjected to a resin sealing process. Thus, a gate runner portion 7 for flowing the sealing resin to the cavity is formed. Further, the gate runner section 6 has a pilot hole 8 for positioning and removing the sealing resin.

In the lead frame, the base metal constituting the main body is made of copper (Cu) (copper-based alloy), and a base plating layer having a thickness of 0.5 mm is formed on the main body.
(Μm) nickel (Ni) layer and a thickness of 0.03 (μm).
m) palladium (Pd) layer and a 0.002 (μm) thick gold (Au) layer constituting the outermost layer are sequentially formed.

Here, in the lead frame for a resin-sealed semiconductor device of the present embodiment, no Au layer is formed in the region of the gate runner portion 7. That is, in the region of the gate runner section 7, the outermost layer is a Pd layer.

FIG. 2 is a cross-sectional view of the lead frame when the outermost Au layer is formed. As shown in the figure, after a Ni layer 21 and a Pd layer 22 are sequentially laminated on a main body 20 made of a copper-based alloy by plating, a photoresist mask 25 covering the gate runner portion 7 is formed. Then, gold plating is applied to a region that is not covered with the photoresist mask 25, and only the gate runner portion 7 has the Au layer 23.
To form a lead frame that does not exist.

In this embodiment, a semiconductor device is manufactured by the following steps using such a resin-encapsulated semiconductor device lead frame.

First, a semiconductor element is mounted on the die pad 1 of a lead frame for a resin-encapsulated semiconductor device, and the semiconductor element and the inner lead 3 of the lead frame are electrically connected by a thin metal wire. A region (sealing portion) including the inner lead 3 and the suspension lead 2 is sealed with a sealing resin. The injection of the sealing resin is performed through the gate runner 7 of the lead frame, and the sealing resin remains in the gate runner 7 after the resin sealing step. Then, after that, the sealing resin remaining in the gate runner portion 7 of the lead frame is peeled off, for example, by punching from the back side of the pilot hole 8, and marking, lead cutting, and lead forming in the next step are performed.

Here, in the lead frame for a resin-encapsulated semiconductor device of the present embodiment, the Au layer is not formed on the gate runner 7 as described above, and the surface of the gate runner 7 is The Pd layer having poor adhesion to the sealing resin is exposed. Therefore, after the resin sealing step is completed, the sealing resin remaining in the gate runner portion 7 can be easily removed by performing punching with a small force from the back side of the pilot hole 8. As described above, since punching is not performed on the lead frame with excessive force, deformation of the lead frame can be reliably prevented.

In addition, since a new member is not separately added to the lead frame to reduce the adhesion, the structure is not restricted by the production and is suitable for the production conditions.

In particular, in the case of a lead frame having a single-layer plating layer, if the plating layer is removed, there is a large problem in the process. Therefore, it is difficult to take measures as in this embodiment. In the second embodiment, in the lead frame structure adopting the laminated plating structure, Au of the outermost layer of the region finally removed like the gate runner portion is used.
It is noted that no problem occurs even if the layer is removed.

The method in which the Au layer is not formed only on the gate runner 7 is not limited to the partial plating method using a mask as shown in FIG.

For example, there is a method in which gold plating is applied to the entire lead frame, and thereafter, the Au layer of only the gate runner portion 7 is partially removed by a chemical treatment or etching. Which of these methods is adopted can be appropriately selected in consideration of the production cost, the production time, and the like.

In the present embodiment, the structure is such that the Au layer is not formed only in the gate runner section 7, but as in the second embodiment described later, the Au layer is formed in a region including most of the gate runner section 7. Otherwise, the adhesion strength between the sealing resin remaining in the gate runner portion and the lead frame is reduced, and the same effect as in the present embodiment can be achieved.

(Second Embodiment) Next, a lead frame for a resin-encapsulated semiconductor device according to a second embodiment will be described with reference to FIGS.

FIG. 3 is a plan view showing a lead frame for a resin-encapsulated semiconductor device of this embodiment. As shown in FIG. 1, the lead frame for a resin-encapsulated semiconductor device according to the present embodiment includes a die pad 1, a suspension lead 2 supporting the die pad 1, an inner lead 3, and a tie bar connecting between the inner leads. 4, an outer lead 5 connected to the inner lead 3, and a frame 6 for supporting each of the above parts from outside. Then, a region (region surrounded by a broken line in the drawing) extending outward from a region corresponding to the base of the suspension lead 2 of the lead frame and extending along the outer edge of the frame frame 6 is subjected to a resin sealing step. Gate runner 7 for flowing sealing resin to cavity
It has become. Further, the gate runner section 6 has a pilot hole 8 for positioning and removing the sealing resin.

In the lead frame, the base metal constituting the main body is made of copper (Cu) (copper-based alloy), and a base plating layer having a thickness of 0.5 is formed on the main body.
(Μm) nickel (Ni) layer and a thickness of 0.03 (μm).
m) palladium (Pd) layer and a 0.002 (μm) thick gold (Au) layer constituting the outermost layer are sequentially formed.

Here, the feature of the lead frame for a resin-encapsulated semiconductor device of the present embodiment is that the density of the Au layer in the region Re1 including most of the gate runner portion 7 is small, that is, the Au layer is formed roughly. It is a point.

FIG. 4 is a sectional view of the lead frame after the outermost Au layer is formed. As shown in the figure, a Ni layer 21, a Pd layer 22, and an Au layer 23 are sequentially laminated on a main body 20 made of a copper-based alloy by plating.
A photoresist mask 25 having an opening in a region Re1 including most of the gate runner portion 7 is formed. Then, laser processing is performed from above to partially remove the Au layer 23 in the region Re1 to roughen the surface.

In this embodiment, a semiconductor device is manufactured through the following steps using such a resin-encapsulated semiconductor device lead frame.

First, a semiconductor element is mounted on a die pad 1 of a lead frame for a resin-encapsulated semiconductor device, and the semiconductor element and the inner lead 3 of the lead frame are electrically connected by a thin metal wire. A region (sealing portion) including the inner lead 3 and the suspension lead 2 is sealed with a sealing resin. The injection of the sealing resin is performed through the gate runner 7 of the lead frame, and the sealing resin remains in the gate runner 7 after the resin sealing step. Then, after that, the sealing resin remaining in the gate runner portion 7 of the lead frame is peeled off, for example, by punching from the back side of the pilot hole 8, and marking, lead cutting, and lead forming in the next step are performed.

Here, in the region Re1 including most of the region of the gate runner portion 7 in the present embodiment, since the Au layer having good adhesion to the sealing resin is formed roughly, The resin also partially contacts the lower Pd layer 22 having poor adhesion. Therefore, the overall adhesion between the remaining sealing resin and the lead frame resin is reduced. After the sealing step is completed, the gate hole is punched from behind the pilot hole 8 with a weak force. The sealing resin remaining in the runner portion 7 can be easily removed. As described above, since punching is not performed on the lead frame with excessive force, deformation of the lead frame can be reliably prevented.

In addition, since a new member is not separately added to the lead frame in order to reduce the adhesion, the structure is not restricted by the production and is suitable for the production conditions.

In the present embodiment, the Au layer of the entire gate runner section 7 is not roughened, but only the gate runner section 7 may be roughened as in the first embodiment. However, since the shape of the photoresist mask is simplified in the present embodiment, there is an advantage that the process of roughening the Au layer becomes easier.

As a method of roughening the Au layer of the gate runner portion 7, in addition to the above-described laser processing method, a region Re1 including the gate runner portion or the gate runner portion by using a mask such as a photoresist mask. 7 to O
2 There are a method of performing ashing and a method of performing light etching, and which method is used can be appropriately selected in consideration of a manufacturing cost, a manufacturing time, and the like.

Third Embodiment Next, a lead frame for a resin-sealed semiconductor device according to a third embodiment will be described with reference to FIGS.

FIG. 5 is a view showing a lead frame for a resin-encapsulated semiconductor device of this embodiment. As shown in FIG. 1, the lead frame for a resin-encapsulated semiconductor device according to the present embodiment includes a die pad 1, a suspension lead 2 supporting the die pad 1, an inner lead 3, and a tie bar connecting between the inner leads. 4, an outer lead 5 connected to the inner lead 3, and a frame 6 for supporting each of the above parts from outside. Then, a region (region surrounded by a broken line in the drawing) extending outward from a region corresponding to the base of the suspension lead 2 of the lead frame and extending along the outer edge of the frame frame 6 is subjected to a resin sealing step. A gate runner section 7 for flowing the sealing resin to the cavity is provided. Further, the gate runner section 6 has a pilot hole 8 for positioning and removing the sealing resin.

In the lead frame, the base metal constituting the main body is made of copper (Cu) (copper-based alloy), and a base plating layer having a thickness of 0.5 mm is formed on the main body.
(Μm) nickel (Ni) layer and a thickness of 0.03 (μm).
m) palladium (Pd) layer and a 0.002 (μm) thick gold (Au) layer constituting the outermost layer are sequentially formed.

Here, the feature of the lead frame for a resin-encapsulated semiconductor device of the present embodiment is, as shown in FIG. 6, in a region Re1 (hatched region) including most of the gate runner portion 7. Is that a concave-convex portion 26 having a trapezoidal cross section, that is, a side surface having a forward tapered shape is formed. As a method of forming such an uneven portion 26, before forming a plating layer on a lead frame, a region R of the lead frame main body 20 made of a copper-based alloy is used.
Pressing, half-etching or the like is performed on e1 to form an uneven portion 26. Thereafter, the Ni layer 21, the Pd layer 22,
There is a method in which the Au layer 23 is sequentially laminated and plated. However, the method of forming the uneven portion can be appropriately selected in consideration of the manufacturing cost, the manufacturing time, and the like.

In this embodiment, a semiconductor device is manufactured by the following steps using such a resin-encapsulated semiconductor device lead frame.

First, a semiconductor element is mounted on the die pad 1 of the lead frame for a resin-encapsulated semiconductor device, and the semiconductor element is electrically connected to the inner lead 3 of the lead frame by a thin metal wire. A region (sealing portion) including the inner lead 3 and the suspension lead 2 is sealed with a sealing resin. The injection of the sealing resin is performed through the gate runner 7 of the lead frame, and the sealing resin remains in the gate runner 7 after the resin sealing step. Thereafter, the sealing resin remaining in the gate runner portion 7 of the lead frame is peeled off, for example, by punching from the back side of the pilot hole 8, and marking, lead cutting, and lead forming in the next step are performed.

Here, in the region Re1 including most of the region of the gate runner portion 7 in the present embodiment, the uneven portion 26 is formed.
Are formed, the following effects occur. That is, the sealing resin and the lead frame remaining in the gate runner portion 7 shrink as the temperature decreases after the resin sealing step is completed, but due to the difference in the coefficient of thermal expansion, the sealing material in which the lead frame remains remains. The degree of shrinkage is greater than that of the stopping resin. Then, due to the thermal stress, a force for separating the sealing resin and the lead frame from each other is generated on the side surface of the concave-convex portion 26 having the forward taper, and the sealing resin biting into the concave-convex portion 26 is peeled off. Therefore, the adhesion between the remaining sealing resin and the lead frame is reduced, and the remaining sealing resin can be easily removed by relatively small punching from the back side of pilot hole 8. As described above, since the punching process is not performed on the lead frame with an excessive force, the deformation of the lead frame can be prevented.

Further, since a new member is not separately added to the lead frame in order to reduce the adhesion, the structure is not restricted by the production and is suitable for the production conditions.

In the present embodiment, the unevenness is not formed on the entire gate runner 7. However, the unevenness may be formed only on the gate runner 7 as in the first embodiment. . However, in the present embodiment, the region R
Since the shape of e1 is simplified, there is an advantage that the formation of unevenness becomes easier.

The region Re1 including the gate runner portion 7
The shape of the concavo-convex portion 26 formed in the first embodiment is not limited to the trapezoidal shape as in the above embodiment, but may be, for example, a shape in which the concave portion has an inverted triangle shape. Further, many isolated mountain-shaped convex portions may be provided. In short, it is only necessary that the side surface has a forward tapered shape so that the sealing resin is peeled off due to the difference in the coefficient of thermal expansion when the resin contracts after the completion of the resin sealing step.

It should be noted that, in addition to the formation of the concavo-convex portion in the region Re1 as in the present embodiment, the Au in the region Re1 or the gate runner portion 7 as in the first embodiment.
The same effect can be obtained by removing the layer or by combining a configuration in which the Au layer is formed roughly as in the second embodiment.

[0059]

According to the first or second aspect of the present invention, the structure of the lead frame for the resin-encapsulated semiconductor device is such that a gold layer having a large adhesive force with the sealing resin is eliminated in the gate runner portion of the lead frame. Since the abundance ratio of the gold layer is reduced, the structure is such that the sealing resin remaining in the gate runner portion can be easily removed after the resin sealing step is completed. It is possible to provide a lead frame capable of manufacturing a resin-encapsulated semiconductor device with good quality.

According to the third aspect, as the structure of the lead frame for the resin-encapsulated semiconductor device, the concavo-convex portion having the forward tapered side surface is provided in the gate runner portion of the lead frame. A lead frame that can easily produce a high-quality resin-encapsulated semiconductor device without causing any manufacturing restrictions, because the sealing resin and the lead frame remaining in the gate runner portion later are easily separated by thermal stress. Can be provided.

[Brief description of the drawings]

FIG. 1 is a plan view showing a lead frame for a resin-encapsulated semiconductor device according to a first embodiment.

FIG. 2 is a cross-sectional view for explaining a step of performing gold plating for not forming an Au layer only on a gate runner portion in the first embodiment.

FIG. 3 is a plan view showing a lead frame for a resin-encapsulated semiconductor device according to a second embodiment.

FIG. 4 is a cross-sectional view for explaining a process for roughening an Au layer in a region including most of a gate runner portion in the second embodiment.

FIG. 5 is a plan view showing a lead frame for a resin-encapsulated semiconductor device according to a third embodiment.

FIG. 6 is a cross-sectional view for explaining a process for forming an uneven portion only in a region including most of the gate runner portion in the third embodiment.

FIG. 7 is a plan view showing a conventional resin-encapsulated semiconductor device lead frame.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Die pad 2 Suspended lead 3 Inner lead 4 Tie bar 5 Outer lead 6 Frame frame 7 Gate runner part 8 Pilot hole 20 Main body 21 Ni layer 22 Pd layer 23 Au layer 25 Photoresist mask 26 Uneven part

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masahiko Aiba 1-1, Yukicho, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. (72) Inventor Shigeo Yoshida 1-1-1, Yukicho, Takatsuki-shi, Osaka Matsushita Electronics Inside the corporation

Claims (5)

[Claims] 1. A lead frame for a resin-encapsulated semiconductor device in which a nickel layer, a palladium layer, and a gold layer are sequentially formed on a main body made of a copper-based material, wherein the lead frame is a resin for encapsulation. And a gate runner portion for guiding the sealing resin to the sealing portion, and a region of the lead frame including at least a part of the gate runner portion, A lead frame for a resin-sealed semiconductor device, wherein the gold layer is not present. 2. A resin-encapsulated semiconductor device lead frame in which a nickel layer, a palladium layer, and a gold layer are sequentially formed on a main body made of a copper-based material, wherein the lead frame is formed of a sealing resin. And a gate runner section for guiding the sealing resin to the sealing section. In a region of the lead frame including at least a part of the gate runner section, A lead frame for a resin-sealed semiconductor device, wherein a gold layer is formed roughly. 3. A lead frame for a resin-encapsulated semiconductor device in which a nickel layer, a palladium layer, and a gold layer are sequentially formed on a main body made of a copper-based material, wherein the lead frame is formed of a sealing resin. And a gate runner portion for guiding the sealing resin to the sealing portion, and a region of the lead frame including at least a part of the gate runner portion, A lead frame for a resin-encapsulated semiconductor device, wherein a side surface is formed with a concavo-convex portion having a tapered shape. 4. The resin-sealed semiconductor device lead frame according to claim 3, wherein said gold layer is not formed in a region including at least a part of said gate runner portion. Lead frame for stationary semiconductor devices. 5. The resin-encapsulated semiconductor device lead frame according to claim 3, wherein the gold layer is formed roughly in a region including at least a part of the gate runner portion. Lead frame for encapsulated semiconductor devices.