JPH10510659A - 擾乱が減ぜられたフラッシュ・メモリ・システム及びその方法 - Google Patents
擾乱が減ぜられたフラッシュ・メモリ・システム及びその方法Info
- Publication number
- JPH10510659A JPH10510659A JP9507846A JP50784697A JPH10510659A JP H10510659 A JPH10510659 A JP H10510659A JP 9507846 A JP9507846 A JP 9507846A JP 50784697 A JP50784697 A JP 50784697A JP H10510659 A JPH10510659 A JP H10510659A
- Authority
- JP
- Japan
- Prior art keywords
- read
- cells
- array
- cell
- memory system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
Landscapes
- Read Only Memory (AREA)
- Reduction Or Emphasis Of Bandwidth Of Signals (AREA)
- Near-Field Transmission Systems (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. フラッシュ・メモリ・システムであって、 多数の行及び列の形態に配列されたフラッシュ・メモリ・セルから成るアレイ であり、各行内に配置されたセルの全ては共通ワード線に接続された制御ゲート を有し、且つ、1列内のセルの全ては共通ビット線に接続されたドレインを有し て成るアレイと、 複数のメモリ動作を実行するための制御手段であり、 (1)プログラム入力アドレスに基づき、前記アレイのセルをプログラムする ためのプログラム手段と、 (2)読取り入力アドレスに基づき、前記アレイのセルを読取るための読取り 手段であり、前記読取り入力アドレスによって決定された前記アレイのワード線 の内の選択された1つに読取り電圧を印加するように機能する読取り手段とを含 むことから成る制御手段と、 前記読取り手段が前記ワード線の内の選択された1つに前記読取り電圧を印加 する期間を制限する擾乱制限手段と、 を備えるフラッシュ・メモリ・システム。 2. 前記読取り手段が、読取られているセルを流れる電流を示す出力を提 供するセンス増幅器を含み、前記擾乱手段が、前記期間の最後に先行して前記セ ンス増幅器出力を示すデータを記憶するためのデータ記憶手段を含む、請求項1 に記載のフラッシュ・メモリ・システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/509,876 US5617350A (en) | 1995-08-01 | 1995-08-01 | Flash memory system having reduced disturb and method |
US08/509,876 | 1995-08-01 | ||
PCT/US1996/012444 WO1997005623A1 (en) | 1995-08-01 | 1996-07-29 | Flash memory system having reduced disturb and method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10510659A true JPH10510659A (ja) | 1998-10-13 |
JP3548830B2 JP3548830B2 (ja) | 2004-07-28 |
Family
ID=24028450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50784697A Expired - Fee Related JP3548830B2 (ja) | 1995-08-01 | 1996-07-29 | 擾乱が減ぜられたフラッシュ・メモリ・システム及びその方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5617350A (ja) |
EP (1) | EP0842514B1 (ja) |
JP (1) | JP3548830B2 (ja) |
KR (1) | KR100308745B1 (ja) |
AT (1) | ATE251329T1 (ja) |
AU (1) | AU6604796A (ja) |
DE (1) | DE69630228T2 (ja) |
WO (1) | WO1997005623A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5970022A (en) * | 1997-03-21 | 1999-10-19 | Winbond Electronics Corporation | Semiconductor memory device with reduced read disturbance |
US5825715A (en) * | 1997-05-13 | 1998-10-20 | Cypress Semiconductor Corp. | Method and apparatus for preventing write operations in a memory device |
DE19742176C1 (de) * | 1997-09-24 | 1999-04-08 | Siemens Ag | Verfahren zur Verwendung beim Einsatz von EEPROMs als Programmspeicher |
US6493270B2 (en) | 1999-07-01 | 2002-12-10 | Micron Technology, Inc. | Leakage detection in programming algorithm for a flash memory device |
US6108241A (en) | 1999-07-01 | 2000-08-22 | Micron Technology, Inc. | Leakage detection in flash memory cell |
TW559814B (en) * | 2001-05-31 | 2003-11-01 | Semiconductor Energy Lab | Nonvolatile memory and method of driving the same |
US6597609B2 (en) | 2001-08-30 | 2003-07-22 | Micron Technology, Inc. | Non-volatile memory with test rows for disturb detection |
EP1359591B1 (en) * | 2002-04-30 | 2006-07-05 | STMicroelectronics S.r.l. | Method for reducing spurious erasing during programming of a nonvolatile nrom |
KR100546134B1 (ko) * | 2004-03-31 | 2006-01-24 | 주식회사 하이닉스반도체 | 입출력을 멀티플렉스 하는 메모리 장치 |
US7804714B1 (en) * | 2007-02-21 | 2010-09-28 | National Semiconductor Corporation | System and method for providing an EPROM with different gate oxide thicknesses |
IT1394027B1 (it) | 2009-05-11 | 2012-05-25 | Mg 2 Srl | Macchina per il riempimento di capsule con prodotti farmaceutici |
US10593397B1 (en) * | 2018-12-07 | 2020-03-17 | Arm Limited | MRAM read and write methods using an incubation delay interval |
US10783957B1 (en) | 2019-03-20 | 2020-09-22 | Arm Limited | Read and logic operation methods for voltage-divider bit-cell memory devices |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5317535A (en) * | 1992-06-19 | 1994-05-31 | Intel Corporation | Gate/source disturb protection for sixteen-bit flash EEPROM memory arrays |
US5434815A (en) * | 1994-01-19 | 1995-07-18 | Atmel Corporation | Stress reduction for non-volatile memory cell |
-
1995
- 1995-08-01 US US08/509,876 patent/US5617350A/en not_active Expired - Lifetime
-
1996
- 1996-07-29 AT AT96925572T patent/ATE251329T1/de not_active IP Right Cessation
- 1996-07-29 JP JP50784697A patent/JP3548830B2/ja not_active Expired - Fee Related
- 1996-07-29 DE DE69630228T patent/DE69630228T2/de not_active Expired - Lifetime
- 1996-07-29 EP EP96925572A patent/EP0842514B1/en not_active Expired - Lifetime
- 1996-07-29 WO PCT/US1996/012444 patent/WO1997005623A1/en active IP Right Grant
- 1996-07-29 AU AU66047/96A patent/AU6604796A/en not_active Abandoned
- 1996-07-29 KR KR1019980700671A patent/KR100308745B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0842514A1 (en) | 1998-05-20 |
DE69630228D1 (de) | 2003-11-06 |
DE69630228T2 (de) | 2004-06-24 |
KR19990036007A (ko) | 1999-05-25 |
ATE251329T1 (de) | 2003-10-15 |
KR100308745B1 (ko) | 2001-11-02 |
EP0842514A4 (en) | 1999-09-08 |
WO1997005623A1 (en) | 1997-02-13 |
JP3548830B2 (ja) | 2004-07-28 |
US5617350A (en) | 1997-04-01 |
AU6604796A (en) | 1997-02-26 |
EP0842514B1 (en) | 2003-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6813187B2 (en) | Bit line setup and discharge circuit for programming non-volatile memory | |
US6717857B2 (en) | Non-volatile semiconductor memory device with cache function and program, read, and page copy-back operations thereof | |
JP2537264B2 (ja) | 半導体記憶装置 | |
US20020181279A1 (en) | Nonvolatile semiconductor memory device including correction of erratic memory cell data | |
US20090238006A1 (en) | Adjusting programming or erase voltage pulses in response to the number of programming or erase failures | |
US9129682B2 (en) | Semiconductor memory device and method of operating the same | |
US7120054B2 (en) | Preconditioning global bitlines | |
US5579262A (en) | Program verify and erase verify control circuit for EPROM/flash | |
US10409506B2 (en) | Sense flags in a memory device | |
JP3548830B2 (ja) | 擾乱が減ぜられたフラッシュ・メモリ・システム及びその方法 | |
US20020054506A1 (en) | Nonvolatile semiconductor memory device and data writing method therefor | |
US7551490B2 (en) | Flash memory device and method of reading data from flash memory device | |
EP1054408A2 (en) | Semiconductor storage device | |
US6178118B1 (en) | Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages | |
JPH065085A (ja) | 不揮発性半導体記憶装置 | |
JP4012144B2 (ja) | 半導体記憶装置 | |
KR20010092073A (ko) | 낸드형 플래시 메모리 장치의 검증 읽기 방법 | |
US5708609A (en) | Semiconductor memory device with dataline undershoot detection and reduced read access time | |
JP2004158052A (ja) | 不揮発性半導体記憶装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20031211 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20040226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040309 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040330 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090430 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090430 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100430 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110430 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120430 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120430 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130430 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130430 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140430 Year of fee payment: 10 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |