JPH1046334A - Sputter coating forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputter film deposition device sputtering the whole area of the surface of a target, uniformize the depth of an erosion region on the surface of the target, improving a utilization efficiency of the target and improving the distribution of the thickness of the film on a film-deposited substrate and the distribution of film quality. SOLUTION: This device is provided with a vacuum vessel 11, exhausting mechanisms 18 exhausting the inside of a vacuum vessel, magnetron cathodes 12a and 12b mounted with targets 14, gas introducing mechanisms 19 introducing process gases and substrate carrying mechanisms. Discharge is generated in the vicinity of the target, by which the target is sputtered, and sputter film deposition is executed on a substrate 15 passing opposite to the surface of the target. The magnetron cathode is provided with a movable magnetron magnetic circuit 32 and is provided with a magnetron rocking mechanism 33 contg. a rocking part to left and right directions rocking a magnetron magnetic circuit parallel to the surface of the target and also in the substrate carrying direction and a rocking part to the upper and lower directions rocking it to the direction vertical to the substrate carrying direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputter film forming apparatus for transporting a substrate facing a target in a vacuum apparatus provided with a magnetron cathode to which the target is attached, and forming a sputter film on the surface of the substrate.

[0002]

2. Description of the Related Art In a conventional film forming apparatus utilizing a sputtering method, a magnetron sputtering method having a high film forming rate has been mainly used. Therefore, as an example, referring to FIG.
A typical configuration of a main part of a conventional double-sided film forming type in-line sputtering film forming apparatus and its operation will be described.

FIG. 16 is a longitudinal sectional view of a main part of a vacuum vessel forming a sputter deposition chamber. 111 is a vacuum container,
Reference numeral 111a denotes an upper wall portion, and 111b denotes a lower wall portion. Magnetron cathodes 112a and 112b are provided on the upper wall portion 111a and the lower wall portion 111b at positions facing each other. Two substrates 113 at parallel positions are loaded into the sputter deposition chamber, and are transported from right to left in FIG. Each of the two substrates 113 is conveyed while being kept horizontal by the tray 114. The upper substrate 113 is sputtered with a target 115 whose upper surface is provided on a magnetron cathode 112a, and the lower substrate 113 is sputtered with a target 115 whose lower surface is provided on a magnetron cathode 112b. Reference numeral 116 denotes a heater arranged at the center of the vacuum vessel 111.

The internal space 117 of the vacuum vessel 111 is evacuated to a pressure of the order of 10 ⁻⁵ Pa by an exhaust mechanism (not shown).
A process gas is introduced into 17 and is maintained at a predetermined process pressure. A shield 119 is provided around each of these gas introduction pipes 117, and the process gas once flows out into the shield 119 through four gas ejection parts 118 a, and passes through four gaps 110 to form a vacuum vessel 111.
Introduced within.

The above-mentioned magnetron cathodes 112a, 1
12b comprises a cathode body 120, a magnetron magnetic circuit 121, the target 115 attached to the cathode body 120, an insulator 123 for insulating the wall of the vacuum vessel 111 from the magnetron cathode, and a target shield 124, respectively. When a voltage is applied from a power source (not shown) to the target bodies 120 of the magnetron cathodes 112a and 112b, the target 115
Discharge occurs between the tray 114 and the corresponding tray 114, and the target 115 is sputtered.
A target material is formed on the substrate 13. During the sputter deposition, the tray 114 and the substrate 113
16, the substrate 113 is maintained at a predetermined temperature. The tray 114 is transported in the direction of the arrow 125 during the sputter deposition.

[0006] Magnetron cathodes 112a, 112b
The magnetron magnetic circuit 121 included in FIG.
7, a rod-shaped central magnet 1 located at the center
26 (a substrate facing surface has an N pole), an outer peripheral magnet 127 (a substrate facing surface having an S pole) having a rectangular ring shape arranged so as to surround the periphery thereof, and a rectangular flat plate yoke 128 for fixing these magnets Consists of The magnetic field generated from the magnetron magnetic circuit 121 creates a closed annular dome-shaped magnetic field 129 on the target 115 as shown in FIG. In the magnetic field 129, electrons generated on the target are caused to spiral on the target by an interaction between an electric field based on a voltage applied to the target 115 and a magnetic field generated on the target 115 by the magnetron magnetic circuit 121. Do exercise. As a result, the number of ionization collisions between the sputtering gas molecules and the electrons in the vacuum vessel 111 increases, and the high-density plasma 130 is generated in the magnetic field 129.

FIG. 19 is a plan view of a high-density plasma 130 generated in a ring form. Positive ions in the high-density plasma 130 collide with the surface of the target 115 at a negative potential, and are sputtered so that the target material jumps out of the target surface. As a result, the target 115
The target material sputtered by the high-density plasma 130 is deposited on the substrate 113 disposed opposite to the substrate 113, and a desired film is formed at a high speed. When a film is formed on a substrate by an in-line type sputtering film forming apparatus, two substrates 113 are formed.
Are transported in parallel to the targets 115 of the magnetron cathodes 112a and 112b, respectively, and a film is formed on the substrates when the substrates pass while facing the corresponding targets 115.

[0008]

In the above-mentioned conventional sputtering film forming apparatus, the magnetron magnetic circuits 112a, 1
Since 12b is fixed and stationary, on the target 115, only the race track portion where the high-density plasma in the dome-shaped magnetic field 129 exists is cut deep by sputtering, and the other portions are hardly sputtered.
Therefore, there is a problem that the use efficiency of the target is low in the conventional sputtering film forming apparatus.

FIGS. 20 and 21 show the erosion shape of the target 115 by the above-mentioned conventional sputtering film forming apparatus. FIG. 20 is a longitudinal sectional view taken along the short side of the target.
FIG. 21 is a longitudinal sectional view taken along the line AA in FIG.
As shown in these figures, only the portion of the target 115 on the race track is eroded (etched). In order to improve the utilization efficiency of the target 115, the magnetron magnetic circuit 121 having a reduced width may be swung in the substrate transport direction 125. In this case, since the high-density plasma 130 oscillates in the center of the target due to the oscillation in the same direction as the substrate transport direction, almost the entire surface of the target is eroded. However, since both end portions of the magnetron magnetic circuit 121 parallel to the substrate transport direction 125 always swing on the same line, they are deeper than the center of the target. Therefore, both ends of the target become deeper than the center, and the target 115
Is determined by the eload speed of both ends of the target parallel to the substrate transfer direction. In other words, both ends parallel to the substrate transport direction are loaded to the bottom of the target before the center of the target. Therefore, the target utilization efficiency is not significantly improved regardless of the overall erosion at the center of the target.

In the above-mentioned swing of the magnetron magnetic circuit 121, when the substrate transfer speed and the swing speed are not more than about the same, the relative speed between the substrate 113 and the magnetron magnetic circuit 121 during the reciprocation of the swing is changed in the substrate traveling direction. In the direction opposite to the above, there is a large difference, so that a film thickness distribution occurs in the transport direction on the substrate.
In order to make the film thickness distribution in the substrate uniform, a method of improving the uniformity in the substrate by changing the power in accordance with the change in the relative speed between the substrate 113 and the magnetron magnetic circuit 121 is considered. It is necessary to control the electric power and the like in accordance with the change in the relative speed, which causes a problem that the control system becomes complicated.

Further, in the case of reactive sputtering, a reactive gas is used in addition to the inert gas. When the power is changed, the amount of sputtered particles from the target is different. Therefore, in order to keep the quality of the film formed on the substrate constant during the film formation, it is necessary to control the reactive gas to an optimum flow rate in accordance with the electric power. For example, In
In forming an oxide film such as a —Sn—O-based transparent conductive film, a mixed gas of Ar gas and O ₂ gas is used as a process gas.
In this case, when the electric power changes, it is necessary to control the oxygen gas flow rate to an appropriate flow rate in order to keep the film quality constant. Therefore, in the case of reactive sputtering, a reactive gas is generally used, so that the control is further complicated.

As described above, when the stationary magnetron magnetic circuit 121 is used, plasma is locally generated and sputtered, resulting in low target utilization efficiency. Further, when the magnetron magnetic circuit is swung in the same direction as the substrate transfer direction, the magnetron magnetic circuit is deeply loaded at both ends parallel to the substrate transfer direction, so that there is a limit to an increase in target use efficiency.

Although the above-described conventional sputter film forming apparatus has been described as an in-line type, a similar problem may occur in a batch type or single-wafer type magnetron sputter film forming apparatus.

[0014] An object of the present invention is to solve the above-mentioned problems, and to sputter the entire surface of the target, to make the depth of the erosion region on the target surface uniform, to improve the use efficiency of the target, It is still another object of the present invention to provide a sputtering film forming apparatus in which a film thickness distribution and a film quality distribution on a film-formed substrate are improved.

[0015]

Means for Solving the Problems A sputter film forming apparatus according to the present invention is configured as follows to achieve the above object.

The first sputter film forming apparatus (corresponding to claim 1) has, as a basic configuration, a vacuum vessel forming a sputter film forming chamber, an exhaust mechanism for evacuating the vacuum vessel, and a vacuum vessel. The apparatus includes a magnetron cathode having a target facing the inside, a gas introduction mechanism for introducing a process gas into a vacuum vessel, and a substrate transport mechanism for transporting a substrate in the vacuum vessel. In the space in the vicinity of the target in the vacuum vessel, a discharge is generated based on the supplied electric power, whereby the target of the magnetron cathode is sputtered, and a sputter film is formed on the substrate passing opposite to the surface of the target. . Further, the magnetron cathode is provided with a magnetron magnetic circuit composed of a magnet on the back side of the target in a movable state, and the magnetron magnetic circuit is parallel to the surface of the target and swings in a substrate swing direction in a first swing mechanism ( A left-right swing unit) and a second swing mechanism (up-down swing unit) that swings the magnetron magnetic circuit in a direction parallel to the surface of the target and perpendicular to the substrate transfer direction.

In the first aspect of the present invention, the first and second oscillating mechanisms are provided so that the magnetron magnetic circuit can be oscillated in the direction of transporting the substrate and in the direction perpendicular thereto, so that the magnetron can be mounted on the target. The erosion depth of the target portion corresponding to both ends parallel to the substrate transport direction of the magnetron magnetic circuit (short sides of the outer peripheral magnet) as well as the portion corresponding to the central portion of the magnetic circuit is equal to or equal to the target central portion. Since it is less than that, the entire surface of the target can be uniformly loaded. Therefore, the target use efficiency can be significantly improved.

In the first invention, the second sputtering film forming apparatus (corresponding to claim 2) preferably has at least one of a swing operation by the first swing mechanism and a swing operation by the second swing mechanism. One is configured to have a sinusoidal swing characteristic.

According to a third aspect of the present invention, in the first invention, at least one of the swing operation by the first swing mechanism and the swing operation by the second swing mechanism is provided at both ends. Is configured to have a constant-speed oscillating characteristic except in the vicinity of.

In the above-mentioned invention, the fourth sputtering film forming apparatus preferably corresponds to each phase of the oscillating operation by the first oscillating mechanism and the oscillating operation by the second oscillating mechanism. Arbitrarily.
Since the use efficiency of the target is affected by the phase of the swing, it is possible to optimize the use efficiency by controlling the phase.

In a fifth aspect of the present invention, in the above-described invention, preferably, the cycle of the swing operation by the first swing mechanism is set to the cycle of the swing operation by the second swing mechanism. The period is at least four times the period. By setting the swing period of the swing operation parallel to the substrate transfer direction to be four times or more the swing period of the vertical swing operation, both ends of the target in the direction perpendicular to the substrate transfer direction can be more widely loaded. Target utilization efficiency can be further improved.

In a sixth aspect of the present invention, in the above invention, the substrate is transported in a plurality of cycles during a time when a certain point of the substrate passes through the target by the swing operation. It is characterized by oscillating in the direction. Since a plurality of cycles of swinging in the substrate transfer direction are performed during a time when a certain point of the substrate passes during transfer, uniform film formation can be performed at all points of the substrate.

[0023]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a longitudinal sectional view showing an in-line type sputter film forming apparatus as an example of a typical embodiment of a sputter film forming apparatus according to the present invention, and showing a main part thereof. The basic configuration is substantially the same as the configuration of the conventional apparatus described with reference to FIG. The sputter film forming apparatus according to the present invention is not limited to the in-line type, but may be a batch type or a single-wafer type. In this embodiment, two substrates arranged in parallel to the sputter deposition chamber are introduced to show a sputter deposition apparatus of a double-sided deposition type.
The present invention is not limited to this.

First, the basic configuration will be described. FIG. 1 shows the upper wall portion 11a and the lower wall portion 11b of the vacuum vessel 11 forming the sputter deposition chamber, where the magnetron cathodes 12a and 12b are provided. Magnetron cathodes 12a and 12b are disposed on the upper wall 11a and the lower wall 11b at positions facing each other. A target 14 is attached to the magnetron cathodes 12a and 12b so as to face the internal space 13 of the vacuum vessel 11. In such a sputter deposition chamber, two substrates 15 are transported from right to left in FIG. Each of the two substrates 15 is transported while being held in a horizontal state by a corresponding tray 16, the upper substrate is sputtered by a target 14 provided on a magnetron cathode 12 a, and the lower substrate is subjected to a magnetron cathode 12 b
Is sputtered by the target 14 provided in the above. Substrate 1
The tray 5 and the tray 16 are transported by a tray transport mechanism (not shown). The two trays 16 are conveyed as a set in a parallel state. During the sputter deposition, the substrate 15 is maintained at a predetermined temperature by a heater 17 arranged at a central position in the vacuum chamber 11. Further, the inside of the vacuum vessel 11 is evacuated to a pressure of preferably about 10 ⁻⁵ Pa by two exhaust mechanisms 18, and thereafter, a process gas is introduced into the internal space 13 by, for example, four gas introduction pipes 19, and a predetermined process Held at pressure. Reference numeral 20 denotes a gas ejection portion, 21 denotes a shield provided around the gas introduction pipe, and 21a denotes a shield 2
A gap for letting out a process gas from 1, a main valve 22, and a substrate transfer direction 23.

Next, the characteristic configuration of this embodiment will be described. The magnetron cathodes 12a and 12b are located on the back side of the target 14 with the cathode body 31 also functioning as a vacuum seal, and swing in a direction parallel to the surface of the target and in a substrate transport direction and a direction perpendicular to this direction. A magnetron magnetic circuit 32 provided to be able to be provided, a magnetron cathode swing mechanism 33 for swinging the magnetron magnetic circuit 32, an insulator 34 for insulating the wall of the vacuum vessel from the magnetron cathode, and a target shield 35. Is done. The present embodiment is characterized in that the magnetron magnetic circuit 32 is swingably provided by the magnetron cathode swing mechanism 33 in the direction parallel to the surface of the target and in the substrate transport direction and in a direction perpendicular to this direction. The target 14 is attached to the surface of the internal space 13 of the cathode body 31 so as to face the internal space of the vacuum vessel 11. Although the two magnetron cathodes 12a and 12b have the same structure, FIG. 1 does not show the magnetron swing mechanism 33 in the upper magnetron cathode 12a to show the swing direction of the magnetron magnetic circuit 32. doing.

The magnetron magnetic circuit 32 includes a central magnet 3
2a, a peripheral magnet 32b and a yoke 32c. This structure is the same as a conventional magnetron magnetic circuit. The target-side surface of the central magnet 32a has an N pole, and the outer peripheral magnet 32b
The target side surface has an S pole. Center magnet 32a and outer magnet 32b in magnetron magnetic circuit 32
Are parallel to the surface of the target 14. This magnetron magnetic circuit 32
This creates a closed, annular, dome-shaped magnetic field on the surface of the target 14. Due to the interaction between this magnetic field and the electric field generated by the voltage applied to the target 14,
The electrons make a spiral motion in the magnetic field. As a result, the number of ionization collisions between the sputtering gas molecules and the electrons in the vacuum chamber 11 increases, and high-density plasma is generated in the magnetic field.

When a voltage is applied to the cathode body 31 from a power supply (not shown), a discharge occurs between the target 14 and the corresponding tray 16. As a result, the target 14 is sputtered by the high-density plasma,
A target material is deposited on the substrate 15 on each tray 16. During the sputter deposition, the tray 16 and the substrate 15
Is heated by the heater 17, and the substrate 15 is maintained at a predetermined temperature.

The basic operation of the sputtering film forming apparatus and the configuration related to the operation will be described. Main valve 2
2, the interior of the vacuum chamber 11 is evacuated to a vacuum by the exhaust mechanism 18, and then the heater 17 is turned on. A thermocouple (not shown) is attached inside the heater 17.
The temperature of the heater 17 is measured by the thermocouple, and the power supplied to the heater is controlled by a temperature control unit (not shown) so as to reach a predetermined temperature. In the internal space 13 of the vacuum vessel 11,
The substrate 15 fixed to each of the plurality of sets of trays 16 is continuously transported by a well-known tray transport mechanism (not shown), that is, a substrate transport mechanism.

Next, a predetermined process gas is supplied from a gas introduction mechanism (not shown). The process gas is introduced through a gas introduction pipe 19, and thereby the internal space 13 of the vacuum vessel 11 is set to a predetermined gas pressure. As a process gas, an inert gas such as Ar is usually used for forming a metal film, an inert gas and an oxygen gas are used for forming an oxide, and a nitrogen gas is added to the inert gas for forming a nitride film. Use what was done. The process gas is once jetted from the gas inlet pipe 19 into the shield 21 and then jetted from the gas jet 20 toward the surface of the target 14. Thereafter, the magnetron swing mechanism 33 is operated in a required operation mode, and power is supplied to the cathode body 31 from a power source (not shown). The cathode body 31 is made of a metal material and fixes the target 14. Cathode body 31 is electrically connected to a metal backing plate (not shown). Ionized plasma is generated on the target 14. When the material of the target 14 is an insulator, RF power is supplied to the cathode body 31. The substrate 15 is continuously transported, and positive ions in the plasma sputter the surface of the target 14 so that the substrate 1
5 is continuously formed.

Next, the detailed structure of the magnetron swing mechanism 33 and the operation of the magnetron magnetic circuit 32 will be described. The operation of the magnetron magnetic circuit 32 is performed in a direction parallel to the substrate transfer direction 23 (referred to as a horizontal direction in FIG. 2).
And a swing operation 42 in a direction perpendicular to the substrate transfer direction 23 (called a vertical direction in FIG. 2).

As shown in FIG. 1, the magnetron swing mechanism 33 includes a motor 43 for causing a swing operation 42,
A motor 44 for generating a swing operation 41 and a phase control unit 4
5 and a swing frequency control unit 46. Note that the arrangement of the motors 43 and 44 shown in FIG. 1 is not strictly accurate, and a typical configuration example will be clarified in a specific example described later. The magnetron rocking mechanism 33 and the magnetron magnetic circuit 32 are connected by a connecting portion 47. Phase controller 4
Reference numeral 5 is for adjusting and controlling the phase in the swing operation of the magnetron magnetic circuit 32 to an optimum phase. According to the phase control unit 45, for example, the right-left oscillating motion 4
The rocking cycle of 1 is 4 times the rocking cycle of the vertical rocking motion 42.
0 radians (rad) or 1 / 4π radians (r
By setting a phase difference that is an integral multiple of ad), the maximum utilization efficiency can be obtained. The swing frequency controller 46 controls the frequency of the swing operations 41 and 42.

FIG. 2 is a diagram showing the swinging operation of the magnetron magnetic circuit 32 at the upper side in FIG. 1 as viewed from the target 14 side. In FIG. 2, reference numeral 48 denotes a recessed area formed on the back side of the cathode body 31 for accommodating the magnetron magnetic circuit 32. The magnetron magnetic circuit 32 includes the recess 4
In 8, a swing operation 41 in a direction parallel to the substrate transfer direction 23 is performed, and a swing operation 42 in a direction perpendicular to the substrate transfer direction 23 is performed at the same time. The swing of the magnetron magnetic circuit 32 is obtained by combining two swing operations 41 and 42. In FIG. 2, the solid line indicates the magnetron magnetic circuit 32 located on the lower left side during the swing, and the broken line indicates the magnetron magnetic circuit 32 located on the upper right side during the swing. As the magnetron magnetic circuit 32 continuously swings in a direction parallel to the substrate transfer direction 23 (horizontal direction) and a direction perpendicular to the substrate transfer direction (vertical direction), the entire surface of the target 14 is uniformly loaded. .

FIG. 3 shows a specific example of a magnetron cathode provided with a swinging mechanism that makes the magnetron magnetic circuit 32 swingable, and shows an example of the magnetron swinging mechanism 33.
The magnetron cathode 120 is provided on the upper wall 11a of the vacuum vessel 11. In FIG. 3, substantially the same elements as those in FIG. 1 are denoted by the same reference numerals. FIG.
A portion corresponding to the target 14 in FIG. 1 is a target material 51 and a backing plate 52. 53 is a cathode body. Cathode body 53 is insulator 3
4 and is fixed to the upper wall portion 11a. A gantry 54 is attached to the back side of the cathode body 53. A vertical swing unit 55 and a horizontal swing unit 56 are fixed to the gantry 54, and a motor 57 is further attached. The magnetron magnetic circuit 32 is attached to the lower side of the left-right swing unit 56 via the connecting unit 47. The vertical swing unit 55 has a built-in mechanism for swinging the magnetron magnetic circuit 32 in the vertical direction 42 based on the power of the motor 57, and the left and right swing unit 56 similarly swings the magnetron magnetic circuit 32 based on the power of the motor 57. A mechanism for swinging in the direction 41 is incorporated. The magnetron rocking mechanism 33 in FIG. 1 includes a vertical rocking section 55 and a horizontal rocking section 56. Vertical swing unit 5
A more specific configuration example of the left and right swing units 56 will be described later. The vacuum vessel 11 and the cathode body 53 are made of the insulator 3
4 electrically insulated.

Next, with reference to FIGS. 4, 5A and 5B, the basics for realizing the magnetron rocking mechanism 33 (a mechanism including the vertical rocking section 55 and the horizontal rocking section 56 in FIG. 3). An example of the dynamic mechanism and a specific configuration example configured by combining them will be described. FIG. 4 shows an example of a basic configuration, and FIGS. 5A and 5B show a specific configuration example. 4 to 5B,
Elements that are substantially the same as the elements described above are given the same reference numerals.

FIG. 4 shows a mechanism for swinging with the characteristic of a sine function over time, as viewed from the back side of the magnetron magnetic circuit 32. The magnetron magnetic circuit 32 swings only in the direction of arrow 61. This swinging operation is caused by the rotation of the arm 62 with the rotation of the motor 43 (or the motor 44). 63 and 64 are rotation shafts at both ends of the arm 62, and are rotation shafts for freely rotating the arm 62. The rotation shaft 63 is coupled to a rotation drive shaft of the motor 43, and the rotation shaft 64 can be freely slid as shown by an arrow 67 by a slider 68 of a fixed base 65 fixed to a back surface of the magnetron magnetic circuit 32 by a fixed screw 66. . Further, the movement of the fixed base 65 in the direction of the arrow 67 is restricted by the guide members 69 and 70 which also serve as fixed parallel sliders. Therefore, the magnetron magnetic circuit 32 cannot move freely in the direction of arrow 67. As described above, the swing of the magnetron magnetic circuit 32 is limited to the direction of the arrow 61. That is, when the arm 62 rotates with the rotation shaft 63 as the origin, the movement of the rotation shaft 64 at the other end performs a constant velocity circular movement, but the slider 68 provided on the rotation shaft 64 freely moves in the direction of the arrow 67. The movement of the magnetron magnetic circuit 32 is restricted by guide members 69 and 70 which also serve as sliders.
Since the magnetron magnetic circuit 32 does not move in the same direction, the swing of the magnetron magnetic circuit 32 is limited to the direction of the arrow 61 only. Accordingly, the magnetron magnetic circuit 32 performs a swing operation having a sinusoidal velocity distribution in the direction of arrow 61. Using the mechanism shown in FIG. 4, for example, the magnetron swing mechanism shown in FIG. 1 or 3 is made. The direction indicated by the arrow 61 corresponds to the swinging operation 41 in the left-right direction, and the left-right swinging unit 56 is formed using the above mechanism.

In the mechanism shown in FIG. 5A, the frame 54 is provided with a motor 57a for swinging in the left-right direction, a motor 57b for swinging in the vertical direction, a swinging portion 56 in the left-right direction, and a swinging portion 55 in the vertical direction. . The lower edge of the gantry 54 is fixed to the opposite edge of the cathode body 53 described above. The mechanism shown in FIG.
0, a second slider 200, a third slider 300, and a fourth slider 400. Each of the sliders 100 to 400 has a similar structure to each other. For example, the sliders 40 to 400 have a cross section taken along line BB in FIG.
As shown in FIG. 5B showing the cross-sectional structure of FIG. 5B, the slider projection 501 and the slider recess 502 are in a fitted relationship, and a ball bearing 503 is provided between the two. 502 has a structure that slides relatively smoothly.

More specifically, the left-right oscillating portion 56
Comprises an arm 71a, a first slider 100, and a second slider 200. The first slider 100 includes a slider concave portion 72, a slider convex portion 73a, and a ball bearing (not shown). The second slider 200 has a slider protrusion 7.
3c, a slider recess 73, and a ball bearing (not shown). The upper side of the second slider 200 is a motor 57b.
Attached to. One end of the arm 71a is a motor 5
7a is connected to the rotation drive shaft 57a-1 of the motor 7a.
, The power is transmitted through the arm 71a and the connecting rod 74a, and the slider recess 73 of the second slider 200 swings in the left-right direction 41 due to the engagement relationship between the first slider 100 and the second slider 200. I do. Note that the slider projection 73c of the second slider 200 is fixed to the gantry 54, and functionally corresponds to the guide members 69 and 70 also serving as the slider shown in FIG.

The vertical swing unit 55 includes an arm 71b.
And a third slider 300 and a fourth slider 400. One end of the arm 71b is connected to the rotary drive shaft 5 of the motor 57b.
7b-1. The third slider 300 includes a slider projection 73b, a slider recess 75a, and a ball bearing (not shown). The slider projection 73b corresponds to the guide member also serving as the slider described with reference to FIG. 4th
The slider 400 also includes a slider protrusion, a slider recess, and a ball bearing (not shown), as shown in FIG. 5B. The slider concave portion 75a is fixed to an upper portion of the member 75c, and the slider convex portion 501 of the fourth slider 400 is fixed to a lower portion of the member 75c. The fourth slider 400
The slider recess 502 is connected to the arm 7 by the connecting portion 74c.
1b is connected to the other end. Magnetron magnetic circuit 32
Is connected to the member 75 via the fixed base 76 and the swing connection portion 75b.
c. In this structure, when the motor 57b rotates, the third slider 300 and the fourth slider 4
00, the swing connection portion 75b swings in the vertical direction 42.

According to the above configuration, based on a combination of the swinging operation in the left-right direction 41 and the swinging operation in the up-down direction 42, the swing connecting portion 75b performs the left-right up-down swinging operation. The fixed pedestal 76 and the magnetron magnetic circuit 32 connected to the swing connection portion 75b also perform right and left and up and down swing operations.

FIG. 6 is a view showing a mechanism of another basic configuration for performing a linear reciprocating motion at a constant speed, and is a view of the back side of the magnetron magnetic circuit 32 as in FIG. The rotational movement of the motor 43 (or the motor 44) causes the swing connection portion 78 to move linearly through the gear box 77. In this case, the shaft 78
a does not rotate, and the magnetron magnetic circuit 32 is fixed to the fixed base 7.
9 and is connected to the swing connection portion 78. In accordance with the forward rotation and the reverse rotation of the motor 43, the motor 43 linearly swings at a constant speed together with the longitudinal swing of the swing connecting portion 78.

The basic configuration shown in FIG. 6 is also used in combination with the basic configuration shown in FIG. 4 to form the magnetron swing mechanism shown in FIG. 3 or FIG. It is possible.

FIGS. 7 and 8 are diagrams showing the change over time of the swinging position with the rotation of the motor in the swinging operation in the horizontal direction.

FIGS. 9 and 10 show a case where the motor makes one rotation (for example, a rotation angle of 2.pi.
d) shows the rotation angle dependency of the motor in the swinging operation in the up-down direction 42. In other words, this indicates that the motor that performs the swinging operation in the left-right direction makes one rotation, and the motor that performs the swinging operation in the vertical direction makes four rotations within the time for making one rotation. In FIGS. 7 and 8, the “normalized position” is a value obtained by dividing the position of each swing point by the maximum swing amplitude / 2.

FIG. 11 shows the swing locus of the magnet magnetic circuit 32 when the rotation angle phase of the motor that swings in the left-right direction 41 is 0 radian and 1 / 4π radian. In this case, except for several intersecting points, the swing trajectory of the magnetron magnetic circuit 32 does not match during one reciprocation of the swing trajectory in the left-right direction. Therefore, the swing trajectories of the plasma do not match, and the target use efficiency is increased. On the other hand, left-right direction 4
When the rotation angle phase of the motor that swings to 1 is 1 / 8π radian, the swing trajectory of the magnetron magnetic circuit 32 coincides during reciprocation, as shown in FIG. 12, so that the target utilization efficiency decreases.

FIGS. 13A to 13C show the vertical direction 42 when the width of the magnetron magnetic circuit is 90 mm and the swing stroke in the left-right direction 41 (Y direction) is 120 mm.
It is a simulation result of the target utilization efficiency when the amplitude of the swing in the (X direction) is changed from 0 to 40 mm, and shows the distribution of the erosion depth (the depth direction in the figure). The size of the magnet magnetic circuit is 90mm x 65
The magnetic field intensity was about 1300 G on the target surface, and the phase angle of the motor rotation for vertical swing was 0 radian. As a result, in FIG. 13A, the vertical swing width is 0 mm, and the utilization rate is 37%. FIG.
In 3B, the vertical swing width is 20 mm, and the utilization factor is 43%. In FIG. 13C, the vertical swing width is 40 m.
m, and the utilization rate is 46%. From the above simulation results, it can be seen that as to the swing in the up-down direction 42, as the amplitude increases, the use efficiency of the target improves.

FIGS. 14A to 14D show the vertical direction 42 (X direction) with the width of the magnetron magnetic circuit being 90 mm.
Is a simulation result of the target use efficiency when the amplitude of the swing in the left-right direction 41 (Y direction) is changed from 0 to 120 mm when the swing stroke of the swing is 40 mm, and the erosion depth (in the figure) (Depth direction). The size of the magnet magnetic circuit is 90mm ×
652 mm x 35 mm, the magnetic field strength was about 1300 G on the target surface, and the phase angle of motor rotation for vertical swing was 0 radian. As a result, in FIG. 14A, the horizontal swing width is 0 mm, and the utilization rate is 12%.
In FIG. 14B, the horizontal swing width is 80 mm, and the utilization factor is 28%. In FIG. 14C, the horizontal swing width is 1
00 mm, and the utilization rate is 39%. In FIG. 14D, the horizontal swing width is 120 mm, and the utilization rate is 46%.
Becomes From the above simulation results, the left-right direction 41
It can be seen that the use efficiency of the target improves as the amplitude increases with respect to the swing of.

FIG. 15 shows a simulation result of the dependence of the target use efficiency on the phase difference. In this simulation, the width of the magnetron magnetic circuit 32 is 9
0 mm, the stroke in the X direction is 40 mm, and the stroke in the Y direction is 120 mm. From this simulation result, when the phase difference is four times the horizontal oscillation period, the target use efficiency is zero.
It can be seen that the target utilization efficiency is maximized at radians or an integral multiple of 1 / 4π radians.

From another point of view, in the sputtering film forming apparatus according to the present invention, regarding the swing operation of the magnetron magnetic circuit, the swing in the substrate transport direction is performed during the time when a certain point on the substrate passes through the target. It is desirable that the oscillating operation by the oscillating mechanism performing the oscillating operation make an oscillation in a plurality of cycles. If a plurality of periods of swinging in the substrate transfer direction are performed during the time when a certain point of the substrate passes during transfer, uniform film formation can be performed at any point on the substrate.

The swing mechanism of the sputterable film apparatus according to the present invention is not limited to the above-described one. Also,
For example, a pulse motor or the like may be used as the motor.
In the present invention, the shape of the target shield, the gas ejection position, and the gas ejection method are not limited to those described above.

In the above-described embodiment, the number of magnetron magnetic circuits is one, regardless of whether the sputter film forming apparatus is an in-line type, a batch type, or a single-wafer type. It is arbitrarily determined according to the size of the target or the width of the magnetic circuit.
The number of magnetron cathodes is also arbitrarily selected as needed. In the case of a single-wafer type, the substrate is usually stationary. In this case, the oscillation period of the magnetron magnetic circuit is set to be sufficiently short compared to the film formation time, or the magnetron magnetic circuit is formed during the film formation. The circuit may be swung for an integer period.

[0052]

As is apparent from the above description, according to the present invention, in a sputtering film forming apparatus using a magnetron cathode, a magnetron magnetic circuit disposed on the back side of a target is parallel to a substrate transport direction. The target can be used more efficiently, and the film thickness distribution and film quality distribution of the thin film on the substrate formed by sputtering can be improved.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a main part of a sputtering film forming apparatus according to the present invention.

FIG. 2 is a diagram illustrating a swinging state of a magnetron magnetic circuit.

FIG. 3 is a longitudinal sectional view showing an example of a magnetron swing mechanism.

FIG. 4 is a plan view showing a basic configuration for configuring a magnetron swing mechanism.

FIG. 5A is a longitudinal sectional view showing a specific example of a magnetron swing mechanism obtained by combining the basic configurations shown in FIG. 4;

FIG. 5B is a sectional view taken along line BB in FIG. 5A.

FIG. 6 is a plan view showing another basic configuration for configuring the magnetron swing mechanism.

FIG. 7 is a characteristic diagram showing a motor rotation angle dependency in a vertical swing operation.

FIG. 8 is a characteristic diagram showing a motor rotation angle dependency in a vertical swing operation.

FIG. 9 is a characteristic diagram showing a change over time in a swing position with rotation of a motor.

FIG. 10 is a characteristic diagram showing a change over time of a swing position with rotation of a motor.

FIG. 11 is a diagram illustrating a swing locus of a magnet magnetic circuit when the rotation angle phase of a motor that swings up and down is 0 radian and 1 / 4π radian.

FIG. 12 is a diagram illustrating a swing locus of a magnet magnetic circuit when a rotation angle phase of a motor that swings up and down is ８ radian.

FIG. 13A: When the width of the magnetron magnetic circuit is 90 mm and the stroke of the swing in the horizontal direction (Y direction) is 120 mm, the amplitude of the swing in the vertical direction (X direction) is 0 mm.
It is a figure which shows the simulation of the target utilization efficiency at the time of making.

FIG. 13B: When the width of the magnetron magnetic circuit is 90 mm and the stroke of the horizontal swing (Y direction) is 120 mm, the amplitude of the vertical swing (X direction) is 20 m.
FIG. 9 is a diagram showing a simulation of target use efficiency when m is set.

FIG. 13C: When the width of the magnetron magnetic circuit is 90 mm and the stroke of the horizontal swing (Y direction) is 120 mm, the amplitude of the vertical swing (X direction) is 40 m.
FIG. 9 is a diagram showing a simulation of target use efficiency when m is set.

FIG. 14A is a target utilization efficiency when the amplitude of the horizontal (Y-direction) swing is 0 mm when the width of the magnetron magnetic circuit is 90 mm and the vertical (X-direction) swing stroke is 40 mm. It is a figure showing the simulation result of.

FIG. 14B: When the width of the magnetron magnetic circuit is 90 mm and the stroke of the vertical swing (X direction) is 40 mm, the amplitude of the horizontal swing 41 (Y direction) is 80 mm.
It is a figure showing the simulation result of target use efficiency when it is set to mm.

FIG. 14C is a diagram showing a case where the amplitude of the swing 41 in the left-right direction (Y direction) is 10 when the width of the magnetron magnetic circuit is 90 mm and the stroke of the swing in the vertical direction (X direction) is 40 mm.
It is a figure showing the simulation result of target utilization efficiency at 0 mm.

FIG. 14D shows a case where the amplitude of the swing in the left-right direction 41 (Y direction) is 12 when the width of the magnetron magnetic circuit is 90 mm and the stroke of the swing in the vertical direction (X direction) is 40 mm.
It is a figure showing the simulation result of target utilization efficiency at 0 mm.

FIG. 15 is a characteristic diagram showing a phase difference dependence characteristic of target use efficiency.

FIG. 16 is a longitudinal sectional view showing a configuration of a main part of a conventional in-line type sputtering film forming apparatus.

FIG. 17 is a front view of a magnetron magnetic circuit.

FIG. 18 is a diagram showing lines of magnetic force on a target and a state of generation of high-density plasma.

FIG. 19 is a plan view showing a state where high-density plasma is generated on a target.

FIG. 20 is a cross-sectional view showing an erosion state of a target.

21 is a sectional view taken along line AA in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Vacuum container 12a, 12b Magnetron cathode 14 Target 15 Substrate 16 Tray 32 Magnetron magnetic circuit 33 Magnetron rocking mechanism 55 Vertical rocking part 56 Horizontal rocking part

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoshifumi Nebuhara 5-8-1, Yotsuya, Fuchu-shi, Tokyo Inside Anelva Co., Ltd.

Claims (6)

[Claims] A vacuum chamber for forming a sputter deposition chamber; an exhaust mechanism for evacuating the interior of the vacuum chamber;
A magnetron cathode equipped with a target facing the inside of the vacuum vessel, a gas introduction mechanism for introducing a process gas into the vacuum vessel, and a substrate transport mechanism for transporting a substrate into the vacuum vessel; In a sputter deposition apparatus for sputtering a target by discharge and performing sputter deposition on the substrate facing the surface of the target, the magnetron cathode includes a magnetron magnetic circuit located on the back side of the target, and the magnetron. A first swing mechanism that swings the magnetic circuit parallel to the surface of the target and in the substrate transfer direction, and the magnetron magnetic circuit in a direction parallel to the target surface and perpendicular to the substrate transfer direction. A sputter film forming apparatus comprising a second swing mechanism that swings. 2. The sputter according to claim 1, wherein at least one of the swing operation by the first swing mechanism and the swing operation by the second swing mechanism has a sine function swing characteristic. Film forming equipment. 3. The oscillating operation of the first oscillating mechanism and the oscillating operation of the second oscillating mechanism have constant-speed oscillating characteristics except for the vicinity of both ends. Item 2. A sputtering film forming apparatus according to Item 1. 4. The apparatus according to claim 1, further comprising means for arbitrarily controlling each phase of the swing operation by the first swing mechanism and the swing operation by the second swing mechanism. Item 2. The sputtering film forming apparatus according to item 1. 5. The cycle of the swinging operation by the first swinging mechanism is at least four times the cycle of the swinging operation by the second swinging mechanism. Item 7. The sputter film forming apparatus according to item 1. 6. The method according to claim 1, wherein the first swing mechanism performs a swing operation in a plurality of cycles in a substrate transport direction during a time when a certain point on the substrate passes through the target.
The sputtering film forming apparatus according to any one of claims 1 to 5.