JP2011137205A - Sputtering film deposition apparatus and method for manufacturing film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering film deposition apparatus and a method for manufacturing the film, wherein the target utilizing efficiency is improved and occurrence of abnormal discharge is reduced even when a target and a magnet are arranged close to each other. <P>SOLUTION: The sputtering film deposition apparatus includes a vacuum container 206, and a magnetron cathode arranged in the vacuum container 206. The magnetron includes a back plate 22 having a target supporting surface for supporting a target T, a magnet unit 209, a first oscillation mechanism for oscillating the magnet unit 209 in the back-proximal direction (the first direction), and a second oscillating mechanism for oscillating the magnet unit 209 in the right-to-left direction (the second direction). Further, the magnet unit 209 and the target supporting surface (in other words, the target T) have the same electric potential. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a sputtering film forming apparatus and a film manufacturing method for transporting a substrate to face the target in a vacuum apparatus including a magnetron cathode to which the target is attached, and performing sputtering film formation on the surface of the substrate.

  In a conventional film forming apparatus using a sputtering method, a magnetron sputtering method having a high film forming speed has been mainly used. In order to increase the utilization efficiency of the target to be sputtered, a technique of swinging a magnet having a smaller area than the target in two axial directions with respect to the target has been generally used (Patent Document 1). reference).

JP 10-46334 A

  For example, it is not preferable that a current flows from the target toward the side other than the substrate side such as the cathode body from the viewpoint of safety such as abnormal discharge. For this reason, the power supply line to the target must be kept electrically insulated from the part other than the target. Therefore, it is desirable that the magnet existing in the vicinity of the target is also electrically insulated from the target. Therefore, in general, an insulating member having the same shape as the target back plate is sandwiched between a back plate and a member having a ground potential such as a cathode body.

  On the other hand, in the magnetron cathode, the reason why the magnet exists in the vicinity of the target is that a magnetic field is formed on the target surface and the ionized introduced gas is confined in the vicinity of the target surface, so that it can be discharged with a lower pressure gas. Effect. Accordingly, it is desirable that the magnet for forming the magnetic field is closer to the target. However, the above-described electrical insulation method is not desirable because the distance between the target and the magnet is inevitably increased by the amount of the insulating member sandwiched therebetween.

  As a means for solving this problem, there is a method of insulating the magnet itself from a ground potential location such as a cathode body. According to this method, since the insulating member between the target and the magnet can be eliminated, the magnet can be brought closer to the target accordingly. However, with this method, if the magnet target is too close, there is a high possibility that the target and the magnet will be physically connected by dust during operation, resulting in abnormal discharge, which is disadvantageous for stable operation of the device. is there.

  In particular, in the cathode that swings the magnet as in the technique disclosed in Patent Document 1 described above, dust generation from the swinging rubbing portion always exists. Accordingly, in order to prevent the target and the magnet from being electrically connected by dust or the like as described above, it is necessary to separate the target and the magnet from each other to some extent. If the distance between the target and the magnet is increased in this way, the magnetic field on the target surface is insufficient, or the magnet size is enlarged to generate the necessary magnetic field.

  As described above, in a film forming apparatus having a magnetron cathode, a method of moving a magnet with respect to a target is effective in order to improve the utilization efficiency of the target. However, there are still problems in improving the convenience and forming the film. In particular, the technique disclosed in Patent Document 1 achieves both effective use of the target and enabling the target and the magnet to be disposed close to each other without causing abnormal discharge in order to form a good magnetic field on the target surface. This has not been realized in the past, and this realization is eagerly desired.

  The present invention has been made in view of such problems, and the object of the present invention is to improve the utilization efficiency of the target and reduce the occurrence of abnormal discharge even if the target and the magnet are arranged close to each other. It is an object of the present invention to provide a sputtering film forming apparatus and a film manufacturing method.

  In order to achieve such an object, the present invention is a sputter film forming apparatus for performing sputtering film formation on a substrate arranged to face a surface of a target by sputtering a target. A vacuum vessel for forming a sputter deposition chamber, and a magnetron cathode disposed in the vacuum vessel, the magnetron cathode having a target support surface for supporting the target, and the target A magnetron magnetic circuit located on the side facing the support surface; a first swing mechanism for swinging the magnetron magnetic circuit in a first direction within the surface of the target support surface; and the magnetron magnetic circuit supported by the target A second oscillating mechanism for oscillating in a second direction different from the first direction in the plane of the surface, Wherein the electrically it has the same potential and the TRON magnetic circuit the target support surface.

  Further, the present invention is a film manufacturing method comprising a magnetron magnetic circuit and forming a film on a substrate by a magnetron cathode on which a target is disposed, the step of disposing the substrate at a position facing the target; Sputtering the target by discharge and forming a film on the substrate by sputter deposition, and forming the film includes two-dimensionally arranging the magnetron magnetic circuit with respect to the surface of the target. The magnetron magnetic circuit and the target are set to the same potential while being moved to.

  According to the present invention, in the sputter deposition apparatus using the magnetron cathode, the magnetron magnetic circuit disposed on the back side of the target support portion is arranged in two directions (for example, substrate transfer) in the in-plane direction of the target support surface of the target support portion. Since it can be swung in a direction parallel to the direction and a direction perpendicular to the direction), the use efficiency of the target supported on the target support surface can be improved, and a thin film on the sputtered substrate can be formed. Thickness distribution and film quality distribution can be improved.

  Furthermore, since the magnetron magnetic circuit and the target support surface (that is, the target) have the same potential, the occurrence of abnormal discharge can be suppressed even when the magnet and the target are arranged close to each other. Accordingly, since the magnetron magnetic circuit can be brought close to the target without restriction, a magnet having a low magnetic field strength can be used as a magnet for forming a magnetic field, and the magnetron cathode unit can be reduced in size and cost. By using a magnet having a low magnetic field strength, it is easy to handle in assembly and the like, and the operation of the apparatus can be simplified.

It is sectional drawing of the sputtering device which concerns on one Embodiment of this invention. It is a cathode unit detailed drawing concerning one embodiment of the present invention. FIG. 3 is a detailed view of a region A in FIG. 2 according to an embodiment of the present invention. FIG. 3 is a detailed view of a region B in FIG. 2 according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings described below, components having the same function are denoted by the same reference numerals, and repeated description thereof is omitted.
A sputtering film formation apparatus according to an embodiment of the present invention (hereinafter, also simply referred to as “sputter film formation apparatus”) has, as a basic configuration, a vacuum container for forming a sputter film formation chamber, and a vacuum exhaust in the vacuum container. And a magnetron cathode that can be attached to a target facing the inside of the vacuum container, a gas introduction mechanism that introduces a process gas into the vacuum container, and a substrate transport mechanism that transports the substrate within the vacuum container. With such a configuration, a discharge is generated based on the input electric power in the space near the target in the vacuum vessel, whereby the target of the magnetron cathode is sputtered, and the substrate passing through the surface of the target, or the above-mentioned Sputter film formation is performed on a substrate disposed opposite to the target.

  The magnetron cathode includes a target support portion having a target support surface, and a magnetron magnetic circuit having a magnet disposed on a back side of the target support portion (a side facing the target support surface). It is in a state where it can move in two axial directions (two-dimensional). Furthermore, the magnetron cathode causes the magnetron magnetic circuit to move in a first direction in the plane of the target support surface (ie, target) (a direction parallel to the surface of the target support surface (target); for example, parallel to the surface of the target. And a second direction different from the first direction in the plane of the support surface of the target (the first swing mechanism (backward direction swinging portion)) swinging in the substrate transport direction). For example, a second swinging mechanism (left-right swinging unit) that swings in a direction parallel to the surface of the target and perpendicular to the substrate transport direction is provided.

  In one embodiment of the present invention, a first oscillating mechanism and a second oscillating mechanism are provided to move the magnetron magnetic circuit in a first direction and a second direction different from the first direction (preferably, the first direction By making it swingable in a direction (perpendicular to the direction), the area facing the magnetron magnetic circuit can be increased in the target. The area of the target facing the magnetron magnetic circuit is eroded according to the arrangement of the magnets in the magnetron magnetic circuit to form an erosion. As described above, the area of the target facing the magnetron magnetic circuit is increased. As a result, the area where the erosion is formed increases, so that the target can be effectively used by the increased amount.

  At this time, if the first direction and the second direction are set to be vertical, the magnetron magnetic circuit can be made to face everywhere on the surface where the erosion of the target is formed, so that the target utilization efficiency is further improved. can do. Therefore, it is preferable to set the first direction and the second direction to be vertical.

  For example, when the first direction and the second direction are set to be perpendicular, the first direction is the substrate transport direction parallel to the surface of the target support surface (that is, the target), and the second direction is the target support. The direction is parallel to the surface of the surface (that is, the target) and is perpendicular to the substrate transport direction. Thereby, in the target, not only the portion corresponding to the central portion of the magnetron magnetic circuit but also both end portions parallel to the substrate transport direction of the magnetron magnetic circuit (for example, the short side portion of the outer peripheral magnet included in the magnetron magnetic circuit). The erosion depth of the target portion can also be equal to or less than that of the target central portion. Therefore, the entire surface of the target can be uniformly loaded. Therefore, the target utilization efficiency can be significantly improved.

  As described above, in the present invention, what is important for improving the utilization efficiency of the target is to move the magnetron magnetic circuit two-dimensionally with respect to the target and shift the erosion forming region on the target, thereby erosion forming region. Is to increase.

  Usually, the magnetron magnetic circuit includes an S-pole magnet and an N-pole magnet, and each of the two polar magnets is arranged so that one polar magnet is surrounded by the other polar magnet. As a result, a magnetic field is formed between the magnets, and the target portion corresponding to the region where the perpendicular component of the magnetic field to the target support surface is zero is loaded. At this time, if an aggregate of regions in which the perpendicular component of the magnetic field generated from the magnetron magnetic circuit is zero is scanned two-dimensionally on the target, the region where the target is loaded can be shifted. Therefore, since the area to be loaded can be moved to a non-loaded area on the target or an area where the degree of erosion is low, the utilization efficiency of the target can be improved.

  That is, in the present invention, it is important to move the magnetron magnetic circuit two-dimensionally in the first direction and the second direction, and the erosion formation region can be shifted by this movement. Setting the first direction and the second direction to be perpendicular to each other allows the magnetron magnetic circuit to be opposed to any of the target surfaces, thereby forming erosion on the entire surface of the target. It is more preferable because it is possible.

  In one embodiment of the present invention, the magnetron cathode includes the first oscillating mechanism and the second oscillating mechanism, and the magnetron magnetic circuit can be moved in two axial directions. Are at the same electrical potential. That is, the magnetron magnetic circuit and the target support surface for supporting the target are set to the same potential.

  In the present invention, the first swing mechanism and the second swing mechanism are provided for effective use of the target. However, dust is generated from the swing portion of each swing mechanism. Therefore, if the target and the magnetron magnetic circuit are provided close to each other, abnormal discharge may occur due to the dust generation.

  Now, the closer the target is to the magnetron magnetic circuit, the lower the magnetic field strength, and the smaller the device. Therefore, in consideration of cost and downsizing of the apparatus, it is desired to reduce the distance between the target and the magnetron magnetic circuit in the film formation using the magnetron cathode. On the other hand, in the embodiment in which the magnetron magnetic circuit is moved in the biaxial direction, dust is generated as described above. Therefore, if the target and the magnetron magnetic circuit are too close to each other, abnormal discharge due to the dust is generated. Therefore, in consideration of the abnormal discharge, the target and the magnetron magnetic circuit have to be arranged at a certain distance, contrary to the desire to arrange the target and the magnetron magnetic circuit close to each other. Thus, there is a trade-off in setting the distance between the magnetron magnetic circuit and the target.

  On the other hand, in one embodiment of the present invention, in the configuration in which the magnetron magnetic circuit moves in two dimensions, the magnetron cathode is configured so that the magnetron magnetic circuit and the target have the same potential. Therefore, even if the magnetron magnetic circuit and the target are arranged close to each other and the magnetron magnetic circuit and the target are physically connected by dust generated during two-dimensional movement of the magnetron magnetic circuit, Since the connected magnetron magnetic circuit and the target are at the same potential, the occurrence of abnormal discharge can be suppressed.

  Therefore, according to the present embodiment, it is possible to simultaneously realize the two demands of improving the utilization efficiency of the target and arranging the magnetron magnetic circuit and the target close to each other while suppressing the occurrence of abnormal discharge.

  Thus, according to an embodiment of the present invention, in a configuration in which the magnetron magnetic circuit is moved two-dimensionally for effective use of the target, the magnetron magnetic circuit and the target are arranged close to each other while suppressing the occurrence of abnormal discharge. Thus, the problem specific to the present invention can be solved. That is, dust generation that is inevitably generated when the magnetron magnetic circuit is moved two-dimensionally to improve the utilization efficiency of the target obstructs the close arrangement of the magnetron magnetic circuit and the target from the point of abnormal discharge. Therefore, in one embodiment of the present invention, the magnetron magnetic circuit and the target are arranged in order to prevent the dust generation that is inevitably generated even if the magnetron magnetic circuit and the target are arranged close to each other from causing abnormal discharge. They are at the same potential.

  That is, in the present invention, moving the magnetron magnetic circuit in the biaxial direction and making the magnetron magnetic circuit and the target electrically the same potential are closely related to solve the above-mentioned problems peculiar to the present invention. In one embodiment of the present invention, which is related to the above two requirements, the efficiency of using the target is improved, and the magnetron magnetic circuit and the magnetron magnetic circuit are suppressed while preventing abnormal discharge caused by dust generation that occurs during two-dimensional movement of the magnetron magnetic circuit. It is possible to realize a conventionally desired effect that the target can be arranged close to the target.

  Furthermore, in one embodiment of the present invention, an insulating member is sandwiched between the magnetron magnetic circuit and both the drive units of the first and second swing mechanisms to electrically insulate the magnetron magnetic circuit. Also good. Further, only the guide portion configured to maintain the straightness of the magnetron magnetic circuit in the first swing mechanism has the same potential as the target support surface (that is, the target), and the material of the guide portion is conductive. It is also good. Then, a part of the guide portion is fixed to the second swing mechanism, and an insulating member is sandwiched between the guide portion and the drive portion of the second swing mechanism, so that it can be electrically insulated.

  In one embodiment of the present invention, in order to solve the problems specific to the present invention as described above, the magnetron magnetic circuit is moved two-dimensionally, and the magnetron magnetic circuit and the target support surface (target) Are at the same potential. Therefore, it is necessary to supply electric power (voltage) to the two-dimensionally moving magnetron magnetic circuit in order to electrically parallel the two-dimensionally moving magnetron magnetic circuit and the target support surface (target). When the power supply path to the magnetron magnetic circuit is routed according to the movement of the magnetron magnetic circuit, the movement of the magnetron magnetic circuit is limited by its physical strength, and the movable range of the magnetron magnetic circuit is narrowed. Alternatively, the power supply path may be damaged. In the present invention, even if there is a limitation on the two-dimensional movement of the magnetron magnetic circuit, if the magnetron magnetic circuit can move two-dimensionally, the target can be effectively utilized by the amount of the movement. It is fully demonstrated. However, if the two-dimensional movable range of the magnetron magnetic circuit can be expanded with the power supply path established, it is more preferable because the target can be used more effectively.

  Therefore, in one embodiment of the present invention, in order to expand the movable range of the magnetron magnetic circuit while maintaining the establishment of a power supply path for setting the magnetron magnetic circuit and the target support surface (target) to the same potential, When the end is fixed, the other end opposite to the one end is provided with a conductive member that can move (swing) along a predetermined direction, and the other end is electrically connected to the magnetron magnetic circuit. (For example, direct connection or connection via a conductive material) is preferable. That is, in parallel with the power supply line to the magnetron cathode target, one end of the conductive member is connected, the other end is electrically connected to the magnetron magnetic circuit, and the conductive member is connected to a part of the power supply path. To be. As an example of such a configuration, for example, by electrically connecting the other end of the conductive member to the guide portion of the first swing mechanism described above, the magnetron magnetic circuit and the target can be set to the same potential. it can. With the above configuration, even when the magnetron magnetic circuit is swung by the first and second rocking mechanisms, the magnetron magnetic circuit can be kept at the same potential as the target without being dragged by the power supply line to the target. .

  In addition, as an example of the conductive member that becomes a part of the power supply path, the conductive member has a spring property in a predetermined direction and can be expanded and contracted in a predetermined direction such as a conductive member (for example, a conductive spring). An electrically conductive member can be used. Further, for example, a thin film made of a soft metal such as aluminum may be used. According to such a thin film, from the other end side electrically connected to the guide portion, by applying a force to one end side connected to the power supply line, the thin film bends from a state in which the thin film extends, The other end electrically connected to the magnetron magnetic circuit can be moved in the predetermined direction.

  As described above, the function of the conductive member serving as a part of the power supply path moves the magnetron magnetic circuit while serving as a part of the power supply path between the power supply line from the external power source and the magnetron magnetic circuit. However, the power supply path is not cut off. Therefore, even if a force is applied at the other end, the magnetron magnet electrically connected to the other end is configured by configuring the conductive member so that the other end can move in the direction in which the force is applied. Even if the circuit is moved along the application direction, the power supply path is not cut.

  In one embodiment of the present invention, in consideration of expanding the movable range of the magnetron magnetic circuit while maintaining the power supply circuit, the conductive member that becomes a part of the power supply path along with the movement of the magnetron magnetic circuit is provided. It is desirable that the magnetic circuit is not routed as much as possible.

  Therefore, in one embodiment of the present invention, the magnetron cathode is provided with a conductive fixed region that does not move (fixed) in one of the first and second directions, and is a part of the power supply path. A predetermined direction that is a moving direction of the conductive member (for example, in a case where the conductive member is a conductive member that can be expanded and contracted), the predetermined direction is the same as the other of the first and second directions. What is necessary is just to connect the other end of this electrically-conductive member to a fixed area | region. As an example of this, for example, a part of the guide part (for example, when the guide part is a nut and a rail, a member (nut or rail) that is not formed on the magnetron magnetic circuit side) is moved in the first direction. And the predetermined direction (for example, the expansion / contraction direction for a stretchable conductive member such as a spring) is made to coincide with the second direction of the second swing mechanism, thereby making the magnetron magnetic circuit Even if it is moved along the first and second directions, power can be supplied to the magnetron magnetic circuit due to the presence of the conductive member.

  That is, even when the magnetron magnetic circuit is moved in the first direction, a part of the guide portion electrically connected to the conductive member is fixed with respect to the first direction. Even if they do not coincide with the first direction, excessive stress is not applied to the conductive member. Therefore, the power supply path to the magnetron magnetic circuit is not cut by the movement of the magnetron magnetic circuit along the first direction. Further, even if the magnetron magnetic circuit is moved in the second direction, the predetermined direction (for example, the expansion and contraction direction) of the conductive member coincides with the second direction, so that the conductive member is the magnetron magnetic circuit. Deforms in response to movement. Therefore, also in this case, the power supply path to the magnetron magnetic circuit is not cut by the movement of the magnetron magnetic circuit along the second direction.

  Thus, in one embodiment of the present invention, the conductive member (for example, a stretchable conductive member) is disposed so that the moving direction (for example, the stretchable direction) coincides with the second direction, The other end opposite to the one end connected to the power supply line is electrically connected to the magnetron magnetic circuit. Therefore, even if the magnetron magnetic circuit is moved two-dimensionally with respect to the surface (in-plane) of the target, it is possible to supply power to the magnetron magnetic circuit satisfactorily due to the presence of the conductive member. And the target (target support surface) can be made to have the same electric potential.

  FIG. 1 shows a cross-sectional view of a sputtering apparatus S according to this embodiment. FIG. 1 is a cross-sectional view of the sputtering apparatus S as viewed from above, with the front side being the upper side and the back side being the lower side with respect to the paper surface. The sputtering apparatus S includes at least a substrate holder 207 and a cathode unit inside a chamber 206 as a vacuum container. A cathode unit is disposed at a position facing the substrate W attached to the substrate holder 207. The target T is bonded to the substrate side of the cathode unit. Both the target T and the substrate are erected substantially perpendicular to the floor surface (horizontal plane).

  The cathode body 205 is installed on the inner wall of the chamber 206. The substrate holder 207 is a member for holding the substrate W, which is a film formation material, and can hold the substrate using electrostatic adsorption or the like. In this embodiment, the substrate holder 207 is configured to be rotatable about the holder support shaft 223. FIG. 1 shows a state where the substrate holder 207 (holder support shaft 223) is rotated to a position where the substrate faces the target T.

  The chamber 206 is connected to an exhaust device (not shown) composed of a vacuum pump, and the inside thereof can be decompressed. The chamber 206 is also connected to a gas supply device (not shown) that can supply a gas such as argon. That is, after the chamber 206 is in a reduced pressure state, a gas such as argon is supplied into the chamber 206 and a high voltage is applied to the target T, thereby forming a film forming process by sputtering on the substrate W held by the substrate holder 207. It can be performed.

  The substrate W is carried into the chamber by a transfer device (not shown) from an opening provided on the side surface of the chamber 206. At that time, the gate valve 208 disposed in the opening on the side surface of the chamber 206 is temporarily opened. When the substrate W is carried into the chamber 206, the substrate holder 207 is centered on the holder support shaft 223 so that the portion to which the substrate W is attached faces upward (a position parallel to the left-right direction). This is done in a rotated state. By performing the operation of closing the valve 208 after the substrate has been loaded, the inside of the chamber 206 can be kept in a reduced pressure state again.

  The target T is bonded to a back plate 202 serving as a target support portion disposed on the substrate side of the cathode unit. The back plate 202 has conductivity and has a target support surface, and the target T is supported on the target support surface. Inside the back plate 202, grooves 214a and 214b are formed as water channels for circulating cooling water, and the grooves 214a and 214b are connected to cooling water sources 212a and 212b via cooling water introduction pipes 213, respectively. . With such a configuration, the target T can be cooled.

  The back plate 202 is fixed to the cathode body 205 on the cathode unit side via a conductive base plate 203. In addition, a conductive member 211 for applying a high voltage can be connected to the base plate 203, and a high voltage power source 210 is connected to the tip of the conductive member 211.

  Further, the base plate 203 is fixed in such a manner that an insulating material 204 is sandwiched between the cathode body 205. Inside the cathode body 205, a magnet unit 209 as a magnetron magnetic circuit is disposed in order to form a constant magnetic field on the surface of the target T. The magnet unit 209 includes a central magnet having an S-pole facing substrate, an outer peripheral magnet having an N-pole facing the substrate, and a rectangular flat plate (yoke) that fixes these magnets. I have.

Next, the details of the mechanism in which the magnet unit 209 has the same potential as the target and can swing in the biaxial directions (vertical direction (first direction) and horizontal direction (second direction)) according to FIGS. Will be described.
The magnet unit 209 is fixed to a conductive base 301, and a conductive spacer 302 can be sandwiched between them and fixed. The spacer 302 enables fine adjustment of the distance between the magnet and the target support surface (that is, the target). That is, the magnet unit 209 is configured such that the spacer 302 can be disposed.

  The guide members 303-1 and 303-2 for guiding the base 301 having the magnet unit 9 fixed thereto and the conductive base 301 in the first direction (backward direction) with respect to the second swing mechanism are respectively nuts 303. -1-a, 303-2-a, and rails 303-1-b, 303-2-b. The nut 303-1-a (303-2-a) and the rail 303-1-b (303-2-b) are in a sliding relationship by a bearing (not shown) and are located in the forward direction (first direction) in FIG. ) Can be swung. The base 301 is fixed to the nuts 303-1-a and 303-2-a of the guide members 303-1 and 303-2. The rails 303-1-b and 303-2-b are fixed to the conductive members 304-1 and 304-2.

Conductive members 304-1 and 304-2 are fixed to housings 306-1 and 306-2 via insulating members 305-1 and 305-2, respectively. The housings 306-1 and 306-2 have built-in bearings 307-1 and 307-2, and are configured in a sliding relationship with the shaft 308 to swing in the left-right direction (second direction) in FIG. It is possible to move. Both ends of the shaft 308 are fixed to the cathode body 205. With the above configuration, the magnet unit 209 can swing in two axial directions, that is, the front side direction (first direction) and the left-right direction (second direction) in FIG.
Each of the guide portions 303-1 and 303-2 has conductivity. That is, each of the nuts 303-1-a and 303-2-a and the rails 303-1-b and 303-2-b have conductivity.

Next, a drive that automatically swings the magnet unit 209 in the first direction (in this embodiment, the front side in FIG. 2) and in the second direction (in this embodiment, the left-right direction in FIG. 2). The mechanism will be described.
An insulating member 311 is fixed to the base 301, and similarly, a rack 312 of the rack and pinion mechanism is fixed to the insulating member 311. The pinion 313 is configured to appropriately mesh with the rack 312 and is fixed to a shaft 314 on the pinion rotation center axis. The shaft 314 is rotatably supported by bearings 315-1 and 315-2 disposed inside the housings 306-1 and 306-2. The shaft 314 is connected to the rotation drive mechanism 317 via a connection joint 316 with the outside. In the present embodiment, the rotation drive mechanism 317 uses a servo motor as a drive source. With the above configuration, when the rotation drive mechanism 317 is driven to rotate alternately forward and reverse, the shaft 314 also rotates forward and reverse alternately. As a result, the magnet unit is provided by the rack and pinion mechanism including the rack 312 and the pinion 313. 209 swings forward.

  Thus, in this embodiment, it can be said that the first swing mechanism includes at least the guide portions 303-1 and 303-2, the rack 312, the pinion 313, the shaft 314, and the rotation drive mechanism 317. The pinion 313 is rotated via the shaft 314 by the rotation driving mechanism 317, and the magnet unit 209 is moved together with the base 301 in the forward direction (first direction) by the rotation of the pinion 313. At this time, the rails 303-1-b and 303-2-b included in the guide portions 303-1 and 303-2 are fixed with respect to the front front direction, which is the first direction, and the conductive members 304-1, 304-2 is also a fixed area for the first direction. Since each of the nuts 303-1-a and 303-2-a attached to the rails 303-1-b and 303-2-b is fixed to the base 301, the rotation of the pinion 313 is performed. Accordingly, the nuts 303-1-a and 303-2-a swing in the rails 303-1-b and 303-2-b along the frontward direction. In such a configuration, the rails 303-1-b and 303-2-b and the conductive members 304-1 and 304-2 are fixed regions with respect to the front side direction, respectively. However, it is movable in the left-right direction as the second direction as will be described later.

  Details of the structures of the housings 306-1 and 306-2, the shaft 314, and the bearings 315-1 and 315-2 will be described with reference to FIGS. 3 is a detailed view of a region A in FIG. 2, and FIG. 4 is a detailed view of a region B in FIG.

  In FIG. 3, a bearing 315-1 is disposed inside the housing 306-1. By fixing the pressing member 321 to the shaft 314, the inner ring of the bearing 315-1 is fixed so as not to shift in the left-right direction. Further, the pressing member 322 is fixed to the housing 306-1 so that the outer ring of the bearing 315-1 is fixed so as not to be displaced in the left-right direction. On the other hand, a bearing 315-2 is disposed inside the housing 306-2. When the pressing member 327 is fixed to the shaft 314 at a position as shown in FIG. 4, the inner ring of the bearing 315-2 is fixed so as not to be displaced in the left-right direction. Further, the pressing member 326 is fixed to the housing 306-2 at a position as shown in FIG. 4 so that the outer ring of the bearing 315-2 is fixed so as not to be displaced in the left-right direction. Further, a shaft 323 is fixed to the pressing member 322, and is connected to a left / right swing driving mechanism 325 via an external connection joint 324. In the present embodiment, the left / right swing drive mechanism 325 converts the rotational operation into a linear motion operation through a ball screw using a servo motor as a drive source.

  With the above configuration, the left and right swing drive mechanism 325 swings left and right, so that the magnet unit 209 is also moved left and right (second direction) via the connection joint 324, the shaft 323, the pressing member 322, the housing 306-1, and the like. Rocks. Thus, in this embodiment, it can be said that the second swing mechanism includes at least the left / right swing drive mechanism 325, the shaft 323, the pressing member 322, and the housings 306-1 and 306-2.

  As is apparent from FIG. 3, the housing 306-1 and the magnet unit 209 are swung in the left-right direction and the shaft 314 is swung in the left-right direction by the left-right swing driving mechanism 325. 1, 315-2 so that the rotational drive force of the rotational drive mechanism 317 can be transmitted to the magnet unit 209 at the same time. Therefore, as a result, the magnet unit 209 can move two-dimensionally (biaxial direction) on the target plane, and can operate in any direction. As a result, the magnetic field on the target surface can be optimally formed, and the target utilization efficiency is improved.

  Further, in FIG. 2, a conductive member 328 is connected to the conductive member 304-1. Further, a member 329 having conductivity and a spring property in the left-right direction (second direction) is disposed so as to form a part of the power supply path from the external power source to the magnet unit 209. That is, one end of the member 329 is connected to the conductive member 211 as a power supply line, the other end is connected to the conductive member 328, and the expansion / contraction direction of the member 329 coincides with the left-right direction as the second direction. Are arranged as follows. With such a configuration, the member 329 is electrically connected to the magnet unit 209, and the power (voltage) supplied from the high voltage power source 210 as an external power source is the conductive member 211, the member 329, the conductive member 328, the conductive member. It is supplied to the magnet unit 209 via the sex member 304-1, the guide part 303-1, the base 301, and the spacer 302. In the present embodiment, the power (voltage) supplied from the high voltage power supply 210 is also supplied to the target T via the conductive member 211, the base plate 203, and the back plate 202 as the target support portion. Therefore, the magnet unit 209 and the target T (target support surface) are electrically connected in parallel, and the magnet unit 209 is electrically at the same potential as the target T.

  Therefore, for example, even when the target T (the back plate 301 serving as a target support surface) and the magnet unit 209 are disposed close to each other, the guide is used when the magnet unit 209 is swung along the front side (first direction). It can suppress that the dust generation which generate | occur | produced from the parts 303-1 and 303-2 contributes to abnormal discharge. That is, even if the magnet unit 209 and the back surface 202 are physically connected to each other due to dust generated when the magnet unit 209 is moved in the first direction, the magnet unit 209 to be connected and the back surface 202 are connected. Therefore, the occurrence of abnormal discharge due to the physical connection can be suppressed. Therefore, in the form in which the magnet unit is moved in the biaxial direction in order to improve the utilization efficiency of the target, even if the back surface 202 (that is, the target T) and the magnet unit 209 are arranged as close as possible, the abnormal discharge is concerned. Since it is not necessary, the width of the magnetron unit to be used can be widened, which is advantageous both in terms of cost and size of the apparatus. That is, both the cost related to the target and the cost related to the magnet used for the magnet unit can be reduced at a stroke.

  Furthermore, in this embodiment, the member 329 has a spring property in the left-right direction (second direction), and the magnet unit 209 is in the left-right direction (second direction) with the guide portion 303-1 interposed therebetween. Even if it swings in the front direction (first direction), the power supply line (power supply path) is not dragged. That is, in this embodiment, the rail 303-1-b, which is a part of the guide portion 301-1 to which the power supply line is connected, is fixed with respect to the front side direction (first direction), and is also in the left-right direction. A part of the power supply line is formed by a member 329 that can expand and contract in the (second direction). Therefore, even if the magnet unit 209 is moved in either the first direction or the second direction, the magnet unit 209 can be favorably applied to the magnet unit 209 without cutting the power supply line while expanding the moving range of the magnet unit 209. Power supply can be realized.

202 Back plate 209 Magnet unit 211 Conductive members 303-1, 303-2 Guide portions 306-1, 306-2 Housing 312 Rack 313 Pinion 314 Shaft 317 Rotation drive mechanism 322 Holding member 323 Shaft 325 Left-right swing drive mechanism

Claims (8)

A sputtering film forming apparatus for performing sputtering film formation on a substrate disposed by facing a surface of a target by sputtering a target,
A vacuum vessel for forming a sputter deposition chamber;
A magnetron cathode disposed in the vacuum vessel,
The magnetron cathode is
A target support portion having a target support surface for supporting the target;
A magnetron magnetic circuit located on the side facing the target support surface;
A first swing mechanism for swinging the magnetron magnetic circuit in a first direction within the surface of the target support surface;
A second swing mechanism that swings the magnetron magnetic circuit in a second direction different from the first direction in the surface of the target support surface;
The sputter deposition apparatus characterized in that the magnetron magnetic circuit and the target support surface are at the same electrical potential.   The sputter deposition apparatus according to claim 1, wherein the magnetron magnetic circuit can be provided with a spacer that allows fine adjustment of the distance to the target support surface. A power supply path for electrically connecting the magnetron magnetic circuit and the target support surface in parallel;
A part of the power supply path is a conductive member capable of moving along the predetermined direction on the other end opposite to the one end when the one end is fixed,
The sputter deposition apparatus according to claim 1, wherein the other end is electrically connected to the magnetron magnetic circuit.   The sputter deposition apparatus according to claim 3, wherein the predetermined direction coincides with one of the first and second directions. The magnetron cathode further includes a conductive region that does not move with respect to the other of the first or second directions,
The sputter deposition apparatus according to claim 4, wherein the other end is electrically connected to the region.   The sputter deposition apparatus according to claim 3, wherein the conductive member is a conductive member that can expand and contract in the predetermined direction.   The sputter deposition apparatus according to claim 6, wherein the stretchable conductive member is a conductive member having a spring property. A method for producing a film comprising a magnetron magnetic circuit and forming a film on a substrate by a magnetron cathode on which a target is disposed,
Disposing the substrate at a position facing the target;
Sputter the target by electric discharge, and forming a film by sputtering film formation on the substrate,
The step of forming the film is characterized in that the magnetron magnetic circuit and the target are set to the same potential while moving the magnetron magnetic circuit two-dimensionally with respect to the surface of the target. .

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