經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（1 ) 〔發明之詳細說明〕 〔發明所屬技術領域〕 本發明係關於濺鍍成膜裝置。特別是*本發明係關於一 種濺鍍成膜裝置，其中磁控管陰極可自由移動。 〔先前之技術〕 K先前之濺鍍成膜裝置，係主要使用成膜速度（deposition rate)大的 磁控管 濺鍍法 。於 此做為 一例， 參考圖 16，將先前之兩面成膜式的在線上型濺鍍成膜裝置之代表 的重要部份之構成及其作用加Μ說明。 圖16係形成濺鍍成膜室之真空容器（vacuum enclosure) 之重要部的縱剖面圖。在真空容器111之上壁部lHa及下 壁部111b之相互對置的位置，設有磁控管陰極112a、112b 。二片相互平行之基板113同時搬入真空容器111内，圖16 中，是Μ從右側到左側之方向搬送（transfer )。二片基板 113係各自藉由托盤114維持於水平所搬送（transfer·)。上 側之基板113是利用其上面設有磁控管陰極112a之靶材115 來做灘鑛處理（sputter processing)，另外，下側之基板 113是利用其下面設有磁控管陰極112b之靶材115來做濺鍍 處理。1 1 6係為配置於真空容器111之中央部的加熱器。 真空容器111之内部空間117係使用排氣機構（未圖示）被 排氣至1 0 -喵级，藉由四支氣體導入管8將濺鍍氣體導 入至該内部空間11 7，並保持於固定之處理壓力。在此等 之氣體導入管117之各自周邊係設有遮護板119，而濺鍍氣 體係通過四部位之氣體噴出部11 8 a暫流出到遮護板U 9内 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） : —4 - ^----：--------05^衣--------訂---------線- (請先閱讀背面之注意事項再填寫本頁) A7 B7 五、發明說明（2 ) ，並通過四部位之間隙110而導入到真空容器π 1内。 前述之磁控管陰極112a、112b，係分別由陰極體120、 磁控管磁氣電路121、安裝於陰極體120之該靶材115、用 Μ絕緣真空容器111之壁部及磁控管陰極之絕緣物123、及 靶材遮護板124所構成。由未圖示電源外加電壓於磁控管 陰極112a、112b之靶材體120，則在靶材115及對應之托盤 114之間產生放電，使靶材115被濺鍍，而在各托盤114上 之基板113上形成一層由靶材材料製成的膜（a film made of the target material is deposited on the sabstrate 113 mounted on each tray 114)。當獵鑛成 膜（sputter deposition)進行時，托盤114及基板113係利 用上述加熱器1 1.6所加熱，將基板1 1 3之溫度保持於固定溫 度。又，濺鍍成膜期間*托盤11 4係Μ箭頭125之方向被搬 送0 如圖17所示，磁控管磁氣電路121通常包含稈狀之中央 磁鐵126(基板對置面為Η極）、包圍其周圍所配置具有長方 形之環形狀的外周磁鐵127 (基板對置面為S極）、及用Κ固 定此等之磁鐵的長方形平板之輒鐵128所構成。由磁控管 磁氣電路121所產生之磁場，如圖1δ所示，在靶材115上， 形成封閉環狀之弓形磁力線129。在該磁力線1 2 9内，係根 據舛加於靶材115之電壓所產生的電力線、及磁控管磁氣 電路121在靶材115上所產生的磁力線的相互作用*使產生 於靶材上之電子在該靶材上進行螺旋狀之運動。其結果， 使真空容器111內之濺鍍氣體分子及電子之電離衝突次數 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） _ 5 - (請先閱讀背面之注意事項再填寫本頁) · --線- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 __B7___ 五、發明說明（3 ) 增大，在磁力線129內產生高密度電漿體130。 圖19係顯示Μ環形形態所生成高密度電漿體130之平面 圖。高密度電漿體130中之正離子，偁衝突於負電位之靶， 材115之表面，而使靶材粒子由靶材表面跳出進行濺鍍。 其結果，對置於該靶材115所配置之基板113 *係藉由高密 度電漿體1 30使被濺鍍後之靶材粒子堆積，並使所需之膜 高速被成膜。Μ在線上型濺鍍成膜裝置在基板進行成膜時 ，二片基板113係分別平行於磁控管陰極112a、112b之靶 材115而被搬送，而基板係在對置於對應之靶材115之狀態 下通過時，在基板上進行成膜。 〔發明所欲解決之問題〕 前述之先前濺鍍成膜裝置中，由於磁控管磁氣電路112a 、112b被固定，所以靶材115上，只有在弓形磁力線129內 存在有高密度電漿體的如賽跑場形狀之部分，被K濺鍍深 深切削，而除此Μ外之部分幾乎未被濺鍍。因此Μ先前之 濺鍍成膜裝置係使靶材存有利用效率變低之問題。 圖20及圔21係顯示利用前述之先前濺鍍成膜裝置之靶材 11 5的侵蝕形狀，圖20係切斷靶材之短邊方向的縱剖面圖 ，画21係Μ圖20中之Α-Α線切斷之縱剖面圖。如此等之圖 所示，靶材115僅在該如賽跑場形狀之部分上被腐刻。為 了使靶材115之利用效率提高，可將寬幅度變小之磁控管 磁氣電路121往復運動於基板搬送方_125即可。該此種在 基板搬送方向往復運'動的情形，使得高密度電漿體130Κ 相同方向在靶材的中央部往復運動，所Μ使靶材幾乎全面 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6 — U----：----------------訂---------線-J'· (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 ___B7_ 五、發明說明（4 ) 被腐刻。可是，因為平行於基板搬送方向125而移動的磁 控管磁氣電路121中之兩端部分經常往復蓮動於相同線上 ，所Μ比靶材中央部成為更滦被腐刻。因此*靶材兩端部 係比中央部成為更深腐刻，所Μ靶材115之壽命，係根據 靶材.中之平行於基板搬送方向之兩端部分的腐刻速度所決 定。換言之，在平行於基板搬送方向之兩端部分，會比靶 材中央部先腐刻到靶材的底面。因此，僅管靶材中央部全 面被侵蝕，但靶材利用效率並未大幅度提高。 又，以磁控管磁氣電路121之上述往復蓮動，當基板搬 送速度及往復蓮動速度在同程度Μ下，則該往復蓮動時* 基板113及磁控管磁氣電路121之相對速度在基板進行方向 Κ及相反方向差異很大，所Κ在基板上搬送方向產生膜厚 分布。為了使該基板內膜厚分布均勻，考慮採取一種方法 ，對應於基板113及磁控管磁氣電路121之相對速度的變化 ，而使電力變化，以改善基板内膜厚的均勻性（f i 1 m thickness uniformity in a substrate)。可是》 對應於 具相對速度之變化必要控制電力，使其控制系統會產生複 雜之問題。 進而，反應濺鍍之情形，係不活性氣體之外使用反應氣 體。使電力變化時*則由靶材上使濺鍍粒子量不同。因此 * 膜質(film propertiss in substrate to substrate )在成膜中做為固定，係將其反應氣體配合電力有必要控 制於最適當流量。譬如如In-Sn-Ο系統透明導電膜以氧化 膜之成膜，係做為濺鍍氣體使用Ar氣體及氣體之混合氣 本紙張尺度適用尹國國家標準（CNS)A4規格（210 X 297公釐) ~ 1 ~ X請先閱讀背面之注意事項再填寫本頁) 譬—— 訂---------線. 經濟部智慧財產局員工消費合作社印製 κι _._Β7 '_ 五、發明說明（5 ) 體。該情形*使電力變化時，則為了將膜質做為固定有必 要將氧氣體流量控制於適量之流量。因此，一般在反應濺 鍍時係為了使用反應性氣體，使控制成為更複雜。 如上述，使用固定之磁控管磁氣電路121時，則使電漿 體局部的產生為了被濺鍍所Μ靶材利用效率低。又在基板 搬送方向及同方向使磁控管磁氣電路往復蓮動時，則在磁 控管磁氣電路之基板搬送方向Κ平行之兩端部因為被深腐 刻，所Μ靶材利用效率有所限制。 前述之先前濺鍍成膜裝置係將在線上型之裝置做了說明 ，但同樣之問題係分批型（batch processing mode)或 單Η型（single substrate processing mode)之磁控管 濺鍍成膜裝置也可產生。 本發明之目的，係要解決上逑問題，提供一種濺鍍成膜 装置，將靶材之表面全面性進行漉鍍，使靶材之利用效率 提高。進而，本發明之目的，儀提供一種濺鍍成膜裝置， 將靶材之侵蝕領域之深度做為一樣，用Μ達成均匀之膜厚 分布。 〔解決問題之手段〕 有關本發明之濺鍍成膜裝置，係為了達成上述目的，如 下所構成。 第1發明之濺鍍成膜裝置（對應於申請專利範圍第1項）， 係磁控管陰極，其特徵具備有：第一往復蓮動機構（左右 方向往復蓮動部），將具備於靶材之背面側的磁控管磁氣 電路在靶材之表面Μ平行往復蓮動於基板搬送方向；及第 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -8 — (請先閲讀背面之注意事項再填寫本頁) 訂---------線- A7 _B7 五、發明說明（6 ) 二往復運動機構（上下方向往復運動部），將磁控管磁氣電 路在靶材之表面K平行對基板搬送方向往復蓮動於垂直之 方向。該濺鍍成膜裝置，進而，做為基本的構成具備有： 真空容器*用以形成濺鍍成膜室；排氣機構，用K真空排 氣該真空容器內；磁控管陰極，面臨真空容器之內部安裝 靶材；氣體導入機構，用K導入濺鍍氣體於真空容器内； 及基板搬送機構*同Μ搬送基板在真空容器內。在真空容 器內之靶材的近傍空間係根據被投入後之電力生成磁控管 放電，藉此磁控管陰極之靶材被濺鍍，而對置於靶材之表 面在通過之基板上進行濺鍍成膜。 上逑第1之本發明，係藉由第一往復運動機構及第二往 復蓮動機構將磁控管磁氣電路自由往復運動於基板搬送方 向及在此垂直之方向。靶材中，不僅對應於磁控管磁氣電 路之中央部的部分，在磁控管磁氣電路之基板搬送方向對 應於平行之兩端部分（外周磁鐵之短邊部）的靶材部分之侵 蝕深度，也成為與靶材中央部同等或Μ下。因此，使磁控 管磁氣電路往復蓮動於基板搬送方向及在此垂直之方向， 可將靶材之全面均勻腐刻。其結果，可將靶材利用效率顯 著提高。 第2發明之濺鍍成膜裝置（對應於申請專利範圍第2項）， 較佳，係藉由第一往復運動機構之往復蓮動動作及藉由第 二往復蓮動機構之往復蓮動動作之中至少一方係持有正弦 函數之往復蓮動（reciprocation)所構成。 第3發明之濺鍍成膜装置（對應於申請專利範圍第3項）， 本紙張尺度適用尹國國家標準（CNS)A4規格（210 X 297公釐) ~ 9 - (請先閱讀背®'之注意事項再填寫本頁) 衷---- 訂---------線. 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（7 ) ，係在第1發明中，藉由第一往復運動機構之往復運動動 作及藉由第二往復蓮動機構之往復運動動作中至少一方， 除了靠近兩端之處外*係由等速之往復蓮動所構成。 第4發明之濺鍍成膜裝置（對應於申請專利範圍第4項）* 其特徵在於：較佳，係將藉由第一往復運動機構之注復運 動動作及第二注復蓮動機構之往復蓮動動作的各相位具有 任意控制之裝置者。靶材之利用效率，係因為藉由往復蓮 動之相位所影響，所K藉由相位之控制成為可利用效率提 高之最適化。 第5發明之濺鍍成膜裝置（對應於申請專利範圍第5項）* 其特徵在於：較佳，係將藉由第一往復蓮動機構之往復運 動動作的周期做為藉由第二往復蓮動機構之往復蓮動動作 的周期四倍Μ上者。在基板搬送方向將平行之往復蓮動動 作的往復蓮動周期藉由做為垂直方向之往復蓮動動作的往 復運動周期四倍以上，在基板搬送方向之垂直方向中使靶 材兩端部分可更廣腐刻*可將靶材利用效率更提高。 第6發明之濺鍍成膜裝置（對應於申請專利範圍第6項）， 其特徵在於：Κ往復運動動作（reciprocation motion)， 將基板的某一點通過靶材的時間之間，成為複數周期之基 板搬送方向的往復蓮動者。使基板之某一點在搬送時通過 之時間為了進行複數周期之基板搬送方向的往復蓮動在基 板之所有點中進行均勻成膜。 〔發明之實施形態〕 K下，將本發明之較佳實施形態根據檢送圖式加Μ說明。 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -10- (請先閲讀背面之注意事項再填寫本頁) 裝--------訂---------線. 經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ V. Description of the Invention (1) [Detailed Description of the Invention] [Technical Field to Which the Invention belongs] The present invention relates to a sputtering film-forming device. In particular, the present invention relates to a sputtering film-forming device in which the cathode of a magnetron can move freely. [Previous technology] K's previous sputtering film-forming equipment mainly uses a magnetron sputtering method with a large deposition rate. As an example, referring to FIG. 16, the structure and functions of the important parts of the conventional on-line sputtering film-forming apparatus of the two-sided film-forming type will be described with reference to FIG. 16. FIG. 16 is a longitudinal sectional view of an important part of a vacuum enclosure forming a sputtering film forming chamber. At positions where the upper wall portion 1Ha and the lower wall portion 111b of the vacuum container 111 face each other, magnetron cathodes 112a and 112b are provided. The two parallel substrates 113 are simultaneously carried into the vacuum container 111. In FIG. 16, M is transferred from the right side to the left side (transfer). Each of the two substrates 113 is transferred while being maintained at a level by a tray 114. The upper substrate 113 is sputter processing using a target 115 provided with a magnetron cathode 112a on the upper substrate 113, and the lower substrate 113 uses a target provided with a magnetron cathode 112b on the lower substrate 113 115 for sputtering. 1 1 6 is a heater arranged in the center of the vacuum container 111. The internal space 117 of the vacuum container 111 is exhausted to a 10-meow level using an exhaust mechanism (not shown), and the sputtering gas is introduced into the internal space 11 7 through four gas introduction pipes 8 and is maintained at Fixed processing pressure. A shielding plate 119 is provided on the periphery of each of these gas introduction pipes 117, and the sputtering gas system temporarily flows out into the shielding plate U 9 through the gas ejection portion 11 8 a at four positions. The paper size is in accordance with Chinese national standards. (CNS) A4 specifications (210 X 297 mm): —4-^ ----: -------- 05 ^ clothing -------- order -------- -Line- (Please read the precautions on the back before filling this page) A7 B7 V. Description of the invention (2), and it is introduced into the vacuum container π 1 through the gap 110 of four parts. The aforementioned magnetron cathodes 112a and 112b are respectively composed of a cathode body 120, a magnetron magnetic circuit 121, the target 115 mounted on the cathode body 120, a wall portion of an M vacuum container 111, and a magnetron cathode, respectively. It is composed of an insulator 123 and a target shield 124. When a target body 120 with a voltage applied to the magnetron cathodes 112a and 112b is applied from a power source not shown, a discharge is generated between the target 115 and the corresponding tray 114, so that the target 115 is sputtered, and the target 114 is sputtered. A film made of the target material is deposited on the sabstrate 113 mounted on each tray 114 on the substrate 113. When the sputter deposition is performed, the tray 114 and the substrate 113 are heated by the above-mentioned heater 1 1.6 to keep the temperature of the substrate 1 13 at a fixed temperature. In addition, during the sputtering film formation, the tray 11 is transported in the direction of 4 M arrows 125. As shown in FIG. 17, the magnetron magnetic circuit 121 usually includes a stalk-shaped central magnet 126 (the opposite surface of the substrate is a pole). It is constituted by a peripheral magnet 127 having a rectangular ring shape arranged around the periphery thereof (the opposite side of the substrate is an S pole), and a rectangular flat iron 128 that fixes these magnets by K. As shown in FIG. 1δ, the magnetic field generated by the magnetron magnetic circuit 121 forms a closed looped arc-shaped magnetic field line 129 on the target 115. Within the magnetic field lines 1 2 9 are the interactions between the electric power lines generated by the voltage applied to the target 115 and the magnetic field lines generated by the magnetron magnetic circuit 121 on the target 115 so as to be generated on the target. The electrons move spirally on the target. As a result, the number of ionization collisions of the sputtered gas molecules and electrons in the vacuum container 111 is adapted to the Chinese National Standard (CNS) A4 specification (210x297 mm) _ 5-(Please read the precautions on the back before filling in this (Page) · --Line-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed A7 __B7___ V. Description of the invention (3) Increased to produce high-density plasma 130 in the magnetic field line 129 . FIG. 19 is a plan view showing the high-density plasma 130 generated by the M-ring shape. The positive ions in the high-density plasma 130 collide with the negative potential target and the surface of the material 115, so that the target particles jump out of the target surface for sputtering. As a result, the target particles 115 placed on the target 115 are deposited with the target particles after sputtering by the high-density plasma 130, and the required film is formed at a high speed. When the M-line sputtering deposition filming device is used to form a substrate, the two substrates 113 are transported parallel to the targets 115 of the magnetron cathodes 112a and 112b, respectively, and the substrates are placed opposite to the corresponding targets. When passing in the state of 115, a film is formed on the substrate. [Problems to be Solved by the Invention] In the foregoing prior sputtering film-forming device, since the magnetron magnetic circuits 112a and 112b are fixed, the target 115 has a high-density plasma only in the arc-shaped magnetic lines 129. The parts like the shape of a racetrack are cut deeply by K sputtering, while the parts other than M are hardly sputtered. Therefore, M's previous sputtering film-forming device has a problem that the target has a low utilization efficiency. Figures 20 and 圔 21 show the eroded shape of the target material 115 using the aforementioned previous sputtering film forming apparatus. Figure 20 is a vertical cross-sectional view of the short side direction of the target material. -A longitudinal sectional view taken along line A. As shown in these figures, the target 115 is etched only on the portion that is shaped like a racetrack. In order to improve the utilization efficiency of the target 115, the magnetron circuit 121 with a smaller width can be reciprocated on the substrate transfer side _125. This situation of reciprocating in the substrate conveying direction makes the high-density plasma 130K reciprocate in the center of the target in the same direction, so that the target is almost complete. This paper standard applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) -6 — U ----: ---------------- Order --------- Line-J '· (Please Please read the notes on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ___B7_ V. Invention Description (4) Corrupted. However, since both end portions of the magnetron magnetic circuit 121 moving in parallel to the substrate conveying direction 125 often move back and forth on the same line, the M becomes more corroded than the center portion of the target. Therefore, the two ends of the target become deeper than the center, and the life of the target 115 is determined by the etching speed of the two ends of the target, which are parallel to the substrate transport direction. In other words, at both end portions parallel to the substrate conveying direction, the bottom surface of the target material is etched before the center portion of the target material. Therefore, although the entire center of the target is eroded, the utilization efficiency of the target has not improved significantly. In addition, with the above-mentioned reciprocating motion of the magnetron magnetic circuit 121, when the substrate conveying speed and the reciprocating motion speed are at the same degree M, when the reciprocating motion is performed * the relative of the substrate 113 and the magnetron magnetic circuit 121 The speed is very different in the substrate traveling direction K and the opposite direction, so the film thickness distribution is generated in the substrate carrying direction. In order to make the thickness distribution of the substrate uniform, consider adopting a method that changes the electric power corresponding to the change of the relative speed of the substrate 113 and the magnetron magnetic circuit 121 to improve the uniformity of the film thickness within the substrate (fi 1 m thickness uniformity in a substrate). However, corresponding to the change in relative speed, it is necessary to control the power, so that its control system will have complex problems. Furthermore, in the case of reactive sputtering, a reactive gas other than an inert gas is used. When the power is changed *, the amount of sputtering particles is made different from the target. Therefore * Film propertiss in substrate to substrate are fixed in the film formation, and it is necessary to control the reaction gas with electric power at the most appropriate flow rate. For example, the transparent conductive film of the In-Sn-O system is formed of an oxide film, which is used as a sputtering gas, and a mixed gas of Ar gas and gas is used. This paper applies the national standard (CNS) A4 specification (210 X 297). Li) ~ 1 ~ X Please read the notes on the back before filling out this page) For example —— Order --------- Line. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs κι _._ Β7 '_ 5 Invention description (5) body. In this case *, when the power is changed, it is necessary to control the oxygen gas flow rate to a proper amount in order to fix the membrane quality. Therefore, in general, reactive gas is used for reactive sputtering, which complicates control. As described above, when the fixed magnetron magnetic circuit 121 is used, the plasma is partially generated so that the utilization efficiency of the target material by sputtering is low. When the magnetron magnetic circuit is reciprocated in the substrate conveying direction and in the same direction, the two ends of the substrate in the magnetron magnetic circuit substrate conveying direction κ are deeply etched, so the utilization efficiency of the target Restricted. The aforementioned previous sputtering film-forming device has explained the on-line type device, but the same problem is the batch processing mode or single substrate processing mode of the magnetron sputtering filming. Devices can also be produced. The object of the present invention is to solve the problem of scouring, and to provide a sputtering film-forming device for honing plating of the surface of a target material so as to improve the utilization efficiency of the target material. Furthermore, for the purpose of the present invention, the instrument provides a sputtering film-forming device that uses the same depth in the erosion field of the target material to achieve uniform film thickness distribution with M. [Means for Solving the Problem] The sputtering film-forming apparatus of the present invention is constructed as follows in order to achieve the above-mentioned object. The sputtering film-forming device of the first invention (corresponding to item 1 of the scope of patent application) is a cathode of a magnetron, and is characterized by a first reciprocating lotus mechanism (a reciprocating lotus portion in the left-right direction), which will be provided on the target The magnetron magnetic circuit on the back side of the material moves parallel to the surface of the target in the direction of substrate transport; and this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -8 — (Please read the precautions on the back before filling this page) Order --------- line-A7 _B7 V. Description of the invention (6) Two reciprocating mechanism (reciprocating part in the up and down direction), the magnetron The magnetic circuit moves back and forth in the vertical direction in parallel to the substrate conveying direction on the surface K of the target. The sputtering film forming apparatus further includes, as a basic structure, a vacuum container * for forming a sputtering film forming chamber, an exhaust mechanism for exhausting the inside of the vacuum container with K vacuum, and a magnetron cathode facing a vacuum. A target is installed inside the container; a gas introduction mechanism is used to introduce the sputtering gas into the vacuum container with K; and a substrate transfer mechanism * is the same as the M transfer substrate in the vacuum container. The near space of the target in the vacuum container generates a magnetron discharge based on the input power, whereby the target of the magnetron cathode is sputtered, and the surface of the target is placed on the passing substrate. Sputtered into a film. The first invention of the invention is based on the first reciprocating mechanism and the second reciprocating mechanism to freely reciprocate the magnetron magnetic circuit in the substrate conveying direction and the perpendicular direction. The target material not only corresponds to the central portion of the magnetron's magnetic circuit, but also corresponds to the target portion of the magnetron's magnetic circuit substrate transfer direction corresponding to the two end portions (the short sides of the outer magnet) in parallel. The erosion depth is also equal to or lower than the center of the target. Therefore, by making the magnetron magnetic circuit reciprocate in the substrate conveying direction and in the vertical direction, the target can be fully and uniformly etched. As a result, the target utilization efficiency can be significantly improved. The sputtering film-forming device of the second invention (corresponding to item 2 of the scope of patent application), preferably, the reciprocating motion by the first reciprocating motion mechanism and the reciprocating motion by the second reciprocating motion mechanism At least one of them is composed of a reciprocation that holds a sine function. The sputtering film-forming device of the third invention (corresponding to item 3 of the scope of patent application), this paper size applies the National Standard (CNS) A4 specification (210 X 297 mm) ~ 9-(Please read the back ® ' Please pay attention to this page before filling in this page) Sincerely ---- Order --------- line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ V. Description of Invention (7), which is the first invention In addition, at least one of the reciprocating motion by the first reciprocating mechanism and the reciprocating motion by the second reciprocating mechanism, except for the positions near the two ends *, is composed of the reciprocating lotus of constant velocity. The sputtering film-forming device of the fourth invention (corresponding to item 4 of the scope of patent application) * It is characterized in that it is better to use the repetitive motion action of the first reciprocating mechanism and the second repetitive motion mechanism of the lotus Each phase of the reciprocating motion has a device for arbitrary control. The utilization efficiency of the target material is affected by the phase of the reciprocating motion, so the control of the phase is used to optimize the utilization efficiency. The sputtering film-forming device of the fifth invention (corresponding to item 5 of the scope of patent application) * It is characterized in that it is better to use the cycle of the reciprocating motion of the first reciprocating lotus mechanism as the second reciprocating motion The cycle of the reciprocating lotus motion of the lotus motion mechanism is four times the above. The reciprocating motion cycle of the parallel reciprocating motion in the substrate conveying direction is four times or more by the reciprocating motion period of the reciprocating motion in the vertical direction. Wider engraving * can increase target utilization efficiency. The sputtering film-forming device of the sixth invention (corresponding to item 6 of the scope of patent application), which is characterized in that: κ reciprocation motion (reciprocation motion), the time between passing a certain point of the substrate through the target material, becomes a period of a plurality of cycles Reciprocator in the substrate conveying direction. The time during which a certain point of the substrate passes during the transfer to perform a plurality of cycles of the substrate conveying direction in a reciprocating motion is uniformly formed on all the points of the substrate. [Embodiment of the Invention] Below K, the preferred embodiment of the present invention will be described by adding M according to the sending pattern. Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -10- (Please read the precautions on the back before filling this page) --- Line. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
A7 B7 圖1係顯示本發明之代表性實施形態之在線上型灘鑛成 膜裝置（in-line sputter deposition system)之重要部 分縱剖面圖。基本的構成部分，係與圖16所說明之先前裝 置的構成在實質上相同。本發明*係不限定於在線上型’ 分批型（batch Processing mode)或單片型（single substrateprocessing mode) 也無妨 。又 Μ 本 實施型 態’係 頸示在獵鍍成膜室（sputter, deposition chamber)將平行 所配列之二片基板同時進行成膜（film deposition)之兩 面成膜形式的濺鍵裝置（dual sputter deposition system )，但本發明並非限定於此。 首先，將基本的構成加Μ說明。圔1係在形成濺鍍成膜 室之真空容器（vacuum enclosure)ll之上壁部11a及下壁 部lib*設有磁控管陰極12a、12b。磁控管陰極12a、12b ’係夾住真空容器11之内部空間13(from opposite side 〇 f an innerspace 13 o f the vacuum enclosure)相互對 置著。在磁控管陰極12a、12b，係使此等面臨真空容器11 之内部空間1 3時，安裝有靶材1 4。在該濺鍍成膜室内，使 二片基板15，由圖1之右測朝向左側所搬送（transfer·)。 二片基板15之各自係藉由托盤16保持於水平所搬送*同時 上側之基板係K設於磁控管陰極1 2a之靶材1 4所濺鍍處理 (sputter processing)*下側之基板Μ設於磁.控管陰極12b 之靶材1 4所濺鍍處理。基板1 5及托盤16 *係藉由未圏示之 托盤搬送機構所搬送。一對之二片的托盤16係相互平行所 搬送。成膜中（during film depositcon) 5基板15，係利 本紙張足度適用中國國家標準（CNS)A4規格（210 X 297公釐） -11: (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製A7 B7 Fig. 1 is a longitudinal sectional view of an important part of an in-line sputter deposition system showing a representative embodiment of the present invention. The basic components are substantially the same as those of the previous device described with reference to FIG. 16. The present invention is not limited to the on-line type 'batch processing mode or single substrate processing mode. Also, this embodiment type is shown in a sputter (deposition chamber) in a sputter (deposition chamber) where two substrates arranged in parallel are simultaneously formed into a film deposition (dual sputter) device (dual sputter). deposition system), but the invention is not limited to this. First, the basic structure will be described with M.圔 1 is provided with magnetron cathodes 12a and 12b on the upper wall portion 11a and the lower wall portion lib * of a vacuum enclosure 11 forming a sputtering film formation chamber. The magnetron cathodes 12a, 12b 'are opposed to each other by sandwiching the inner space 13 (from the inner space 13 o f the vacuum enclosure) of the vacuum container 11. When the magnetron cathodes 12a, 12b face these internal spaces 13 of the vacuum container 11, a target material 14 is attached. In this sputtering deposition chamber, the two substrates 15 are transferred from the right side of FIG. 1 to the left side (transfer ·). Each of the two substrates 15 is transported while being held horizontally by a tray 16 * while the upper substrate is K is provided on the target 12 of the magnetron cathode 12a by sputtering processing * the lower substrate M The target material 14 provided on the magnetron cathode 12b is sputtered. The substrate 15 and the tray 16 * are transferred by a tray transfer mechanism not shown. The two pairs of trays 16 are transported in parallel with each other. During the film formation (during film depositcon) 5 substrates 15, the paper is fully compatible with Chinese National Standard (CNS) A4 specifications (210 X 297 mm) -11: (Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs
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經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（9 ) 用配置於真空容器11内之中央位置的加熱器17加熱到所胃 之溫度（desired temperature)為止。真空容器11之内舍0 ，係藉由二排氣機構（pumping mechanisin)18較佳排氣纟 10 - 5 pa級*譬如利用四支之氣體導入管19導入濺鍍氣體 於内部空間13。而且，濺鍍氣體，係設定為濺鍍處理必胃 之壓力。20係氣體噴出部，21係設於氣體導入管周邊之^ 護板，21 a係由遮護板為了流出濺鍍氣體之間隙，22係$ 闊，23係基板搬送方向。 其次，將本實施形態之特徵性的構成加Μ說明。磁控胃 陰極12a,12b,基本上，其構成係具備有：陰極主體31，兼 備靶材之固定具及真空密封之機能（serving as both a target fixture and a vaccum seal);磁控管磁氣電路 32，設於靶材14之背面側；絕緣物34，以電氣用M絕緣真 空容器之壁部及磁控管陰極；及靶材遮護板35。可是，進 而，磁控管陰極12a，12b，係具備有磁控管陰極往復運動 機構33，將磁控管磁氣電路32在靶材之表面使同時往復運 動於平行狀態基板搬送方向及此方向之垂直的方向。本實 施形態，其特徵在於：使磁控管磁氣電路32*藉由磁控管 陰極往復運動機構33利用基板搬送方尚之動向（movement Vector)及垂直方向之動向（movement Vector)之合成 (Vectoriai composite)自由往復運動（move at will)之 點。上述靶材14，係在陰極主體31之內部空間13之表面， 面臨於真空容器11之内部空門所安裝。還有，二磁控管陰 極12a，12b係其有同樣構造，但圖1係為了顯示磁控管磁 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮1 - 12 - -清先閲讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (9) The heater 17 arranged in the central position in the vacuum container 11 is used to heat to the desired temperature. The inner chamber 0 of the vacuum container 11 is preferably exhausted through a two-exhaust mechanism (pumping mechanisin) 18, 10-5 pa level * For example, four gas introduction pipes 19 are used to introduce sputtering gas into the internal space 13. The sputtering gas is set to the pressure necessary for the sputtering process. 20 series gas ejection part, 21 series ^ protection plate installed around the gas introduction pipe, 21 a series is the gap between the shield plate and the sputter gas, 22 series is wide, and 23 series is the substrate conveying direction. Next, the characteristic configuration of this embodiment will be described with reference to M. Magnetron stomach cathodes 12a, 12b, basically, the structure is provided with: cathode body 31, serving as both a target fixture and a vaccum seal; magnetron magnetism A circuit 32 is provided on the back side of the target 14; an insulator 34 is used to electrically insulate the wall portion of the vacuum container and the cathode of the magnetron; and the target shield 35. However, furthermore, the magnetron cathodes 12a and 12b are provided with a magnetron cathode reciprocating mechanism 33, and the magnetron magnetic circuit 32 is simultaneously reciprocated on the surface of the target in a parallel state substrate transport direction and this direction Vertical direction. This embodiment is characterized in that the magnetron magnetic circuit 32 * uses the substrate of the magnetron cathode reciprocating mechanism 33 to transfer the movement vector (movement Vector) and vertical movement vector (Vectoriai) composite) move at will. The target material 14 is installed on the surface of the internal space 13 of the cathode main body 31 and faces the internal empty door of the vacuum container 11. In addition, the two magnetron cathodes 12a, 12b have the same structure, but Figure 1 is for the purpose of showing the magnetron magnet paper size to the Chinese National Standard (CNS) A4 specification (210 X 297) 1-12-- (Please read the notes on the back before filling in this page)
經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（10 ) 氣電路32之往復蓮動方向，所Μ將上側之磁控管陰極12a 中之磁控管往復蓮動機構33之圖示加K省略。 磁控管磁氣電路32，係由中央磁鐵32a及外周磁鐵32b及 軛鐵32c所構成。如此之構造係與先前之磁控管磁氣電路 同樣.。中央磁鐵32a之靶材側表面係成為N極，外周磁鐵32b 之靶材側表面係成為S極。中央磁鐵32a及外周磁鐵32t>之 各自靶材側之表面係與靶材1 4之表面成為平行。藉由該磁 控管磁氣電路32，在靶材14之表面上，製作K關閉環狀之 弓形狀的磁力線（Arch-shapedlines of ‘magnetic force are developed into a closed look, what is called "torus" on the surf ace of the target 14 b y the magnetron magnetic circuit 32)。藉由外加電壓於該磁 力線及靶材利用與電氣力線之相互作用，在磁力線內使電 子進行螺旋狀之蓮動。其結果，使真空容器11内之濺鍍氣 體分子及電子之電離衝突次數增大，在磁場內產生高密度 之磁控管電漿體。 對陰極主體3 1由電源（未圖示）使電壓被外加，則與靶材 14對應之托盤16之間產生放電。其結果，使靶材14藉由磁 控管電槳體所濺鍍，並在各托盤16上之基板15使靶材檄質 被堆積。進行濺鍍成膜之間，托盤1 6及基板1 5係藉由加熱 器1 7所加熱。 將上逑濺鍍成膜裝置之基本的動作及有關其動作之構成 加Μ說明。打開主閥2 2 K排氣機構1 8將真空容器11之內部 空間13真空排氣之後，將加熱器17圼ON狀態。在加熱器17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -13- i----；--------,©农--------訂---------線 J. (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（11 ) 之內部，係安裝未圖示之熱電偶，Μ該熱電偶測定加熱器 1 7之溫度，Μ未圖示溫度控制部用以控制供應電力到加熱 器成為設定溫度。又在真空容器11之内部空間1 3，藉由未 圖示眾所周知之托盤搬送機構，將搭載於複數之一對托盤 1 6之各自基板1 5以連續加Κ搬送。 其次由氣體導入機構（未圖示）經由氣體導入管19使濺鍍 氣體供應到真空容器11之內部空間1 3。濺鍍氣體，係暫時 由氣體導入管19噴出到遮護板21內*之後由氣體噴出口 20 朝向靶材1 4之表面所噴出。做為濺鍍氣體* Μ金屬膜之成 膜通常係使用如Ar·之不活性氣體，Μ氧化物之成膜係使用 不活性氣體及氧氣體，以氮化物之成膜係在不活性氣體用 添加氮氣體。進而之後，將磁控管往復蓮動機構33Μ後述 之動作態樣使動作，同時由未圖示電源將電力供應到陰極 主體31。陰極主體31係Μ金屬材所製作，用Μ固定靶材14 。陰極主體31係與未圖示金屬製墊板Κ電氣所連接。在靶 材14上，係產生電離電漿體。癦有靶材14之材料為絕緣物 時，則在陰極主體3 1供應R F電力。將基板1 5連續搬送，使 電漿體中之正離子將靶材14之表面藉由進行濺鍍在基板15 連續進行成膜。 其次，將磁控管往復蓮動機構33之詳綑構成，及據在此 將磁控管磁氣電路3 2之動作加Μ說明。磁控管磁氣電路3 2 之動作，係合成有基板搬送方向23及平行之方向（在圖2中 稱為左右方向）的往復蓮動動作41，及在基板搬送方向41 垂直之方向（在圖2中稱為上下方向）的往復蓮動動作42。 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -14 - .i----^----------------訂---------線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員Η消費合作社印製 A7 _B7_ 五、發明說明（12 ) 如圖1所示，磁控管往復蓮動機構33，係具備有：馬達 43，使產生往復運動（reciprocal motion)42;馬達44， 使產生往復蓮動動作（reciprocal motion)41;相位控制 部45;及往復運動頻率控制部（recipr_o cal frequency contro 1 ler·) 46。還有，圖1所示之馬達43、44之配置構成 係並非很嚴密正確，Μ後述之具體例係明白顯示代表性的 構成例。磁控管往復蓮動機構33及磁控管氣電路32係藉由 連結部47所結合。相位控制部45，係為了將磁控管磁氣電 路32之往復運動動作中之相位調整。控制於最適當之相位 。若依據相位控制部45，則例如，係使左右方向之往復蓮 動動作41之往復蓮動同期在上下方向之往復運動動作42的 注復蓮動周期四倍時，若設定0徑度（r>ad)或l/4;r徑度 (rad)托爾之相位差，則可獲得靶材之最大利用效率（use e f f i c i e n c y )。又往復運動頻率控制部46係為了控制往復 運動動作41、4 2之頻率。 圖2係將圖1中上側之磁控管磁氣電路32之往復蓮動動作 由靶材14之側觀看之圖。圖2係顯示48係形成於陰極主體31 之背面側*為了用Μ收容磁控管磁氣電3 2之凹處領域。磁 控管磁氣電路32*係在凹處48內*與基板搬送方向23進行 平行之方向的往復蓮動動作41，同時在基板搬送方向23進 行垂直之方向的往復蓮動動作42。磁控管磁氣電路32之往 復蓮動，係合成二種之往復蓮動動作41、42。圖2中係顯 示以實線所示者係定位於往復蓮動中左下側之磁控管磁氣 電路3 2，以虛線所示者係顯示定位於往復蓮動中右上測之 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —15 — ^----:------------------訂---------線}/ (請先閱讀背面之注音？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 κι _Β7_ 五、發明說明（I3 ) 磁控管磁氣電路32。使磁控管磁氣電路32對基板搬送方向 23藉由連續往復蓮動（reciprocate)於平行方向（左右方向 )及垂直方向（上下方向），而靶材14之表面的全面成為均 旬所腐刻（erode)。 圖.3係顯示將磁控管磁氣電路3 2做為可往復蓮動具備磁 控管往復運動機構33之磁控管陰極120。該磁控管陰極120 係設於真空容器11之上壁部11a。圖3中與圖1實質上同一 .元件係附與同一編號。在圔3，相當於圖1中之耙材14的部 份係靶材材料5 1及墊板5 2。5 3係陰極主體。陰極主體5 3 係通過絕緣物3 4而固定於上壁部11 a。在陰極主體5 3之背 面係安裝架台54。在架台5 4係固定著上下方向往復蓮動部 (up-and-down oscillating block slider crank)55及左 右方向往復運動部（right-and-left oscillatin_g block slider crank)56，進而安裝有馬達57。在左右方向往復 蓮動部56之下側通過連結部47安裝著磁控管磁氣電路32。 上下方向往復運動部5 5係根據馬達5 7之動力使磁控管磁氣 電路32往復蓮動於上下方向42將機構内藏*而左右方向往 復運動部56係同樣根據馬達57之動力使磁控管磁氣電路32 往復蓮動於左右方向41將機構内藏。圖1之磁控管注復運 動機構33係由上下方©往復蓮動部55及左右方向往復運動 部56所構成。上下方向往復蓮動部55及左右方向往復蓮動 部56之更具體的構成例係被後述。真空容器11及陰極主體 5 3係藉由絕緣體3 4 Μ電氣所絕緣。 其次參考圖4及圖5Α及圖5Β為了實現磁控管往復運動機 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） - 1 6 - J----^--------Θ衣--------訂---------線. (請先閲讀背面之注意事項再填寫本頁) A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（Μ ) 構33(包圖3中之上下方向往復運動部55及左右方向往復蓮 動部56機構）之基本的機構之一例，及將此組合所構成之 具體的構成例加Μ說明。圖4係顯示基本的構成之一例’ 圖5 Α及圖5 Β係具體的構成例。由圖4到圖5 8中’與前述之 要素.實質上同一元件則附與同一之編號。 圖4係由磁控管磁氣電路32之背面側觀看之圖。磁控管 磁氣電路32，係隨著時間經過沿著正弦函數之軌跡進行往 復蓮動。磁控管磁氣電路32係僅往復蓮動於箭頭61之方向 。該往復蓮動動作，係隨著馬達43 (或馬達44)之旋轉使柄 62藉由旋轉產生。63及64係柄62之兩端的旋轉軸’為了使 柄62自由旋轉之旋轉軸。旋轉軸63係結合於馬達43之旋轉 驅動軸，而旋轉軸64，係在磁控管磁氣電路32之背面Μ固 定螺釘66所固定W台座65之滑塊6 8如箭頭67所示可自由滑 動。台座65，係兼被固定後之平行的滑塊藉由引導構件69 5 70蛆止箭頭67之方向的蓮動。因此磁控管磁氣電路32係 不能自由移動於箭頭67之方向。如此磁控管磁氣電路32之 往復蓮動係被限定於箭頭6 1之方向，當柄62係Μ旋轉軸63 做為原點加Κ旋轉時，則另一端進行均匀圓周蓮動。而且 *設於旋轉軸64之滑塊68係自由蓮動於箭頭67之方向。另 夕卜，磁控管磁氣電路32之動向係因為Μ兼滑塊之引導構件 69、70所拘束，所Μ不能移動於同方向。其結果，磁控管 磁氣電路3 2係在箭頭6 1之方向根據正弦波進行具有速度變 化之往復運動動作。將圖4所示之機構利用圖1或圖3所示 之磁控管往復運動機構。藉由上逑箭頭61所示方向係對應 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） -17 - ----^-----------丨！丨訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 _B7 _ 五、發明說明（I5 ) 於左右方向之往復運動動作41，使左右方向往復運動部56 利用圖4所示之機構。 圖5 A係顯示設有左右方向往復運動用之馬達57a，及上 下方向往復運動用之馬達57b，及左右方向往復運動部56 及上.下方向往復蓮動部55之架台54。架台54之下側緣部， 係被固定於前述之陰極主體53中對置之緣部。圖5A所示之 機構，係包含第一滑瑰100、第二滑塊200、第三滑塊300 、第四滑塊400之四部位的滑塊構造部份。滑塊100 ·、200 之各自，係做為圖5 A中之B _ B線剖面Μ所示之圖5 B明白顯 示，使滑塊凸部5 0 1及滑塊凹部5 0 2嵌合，且在兩者之間設 有滾珠軸承503，使滑塊凸部501及滑塊凹部502相對地圓 滑滑動。 Μ具體加Μ說明，則左右方往復運動部56，係由柄7 1 a 及第一滑塊100及第二滑塊200所構成。第一滑塊100，係 由滑瑰凹部72及滑塊凸部73a及未圔示滾珠軸承所搆成。 第二滑塊2 0 0 *之上側係安裝於馬達5 7 b。柄7 1 a之一端係 連結於馬達5 7 a之旋轉驅動軸5 7 a - 1。使馬達5 7動作，則通 過柄71a及連結棒74a傳達動力，並藉由第一滑塊100及第 二滑塊200之各自的接合關係使第二滑塊200之滑塊凹部73 往復運動於左右方向41。還有，第二滑塊200之滑塊凸部 73c *係固定於架台54，Μ機能性而言係相當於兼圖4所示 之滑塊的引導構件69、70。 上下方向往復蓮動部5 5，係由柄7 1 b及第三滑塊3 0 0及第 四滑塊40 0所構成。柄7 1 b之一端係連結於馬達5 7之旋轉驅 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 一 1 8 - -----：----------------訂---------線 (請先閲讀背面之注意事項再填寫本頁) A7 __B7___ 五、發明說明（ι〇 (請先閲讀背面之注音3事項再填寫本頁) 動軸57b-l。第三滑塊300，係由滑塊凸部73b及滑塊凹部 75a及未圖示滾珠軸承所構成。滑塊凸部73b’係相當於兼 圖4所說明之滑塊的引導構件。第四滑塊400，也如圖5B所 示，係由滑塊凸部及滑塊凹部及未圖示滾珠軸承所構成。 上述滑塊凹部75a係固定於構作75c之上部，而第四潸塊 400之滑塊凸部501僑固定於構件75c之下部。又第四滑塊 400之滑塊凹部502係藉由連結部74c連結於柄71b之他端。 磁控管磁氣電路32，係係通過固定台座76及往復運動連結 部7 5 b結合於構件7 5 c。該構造中，使馬達5 7 b動作’則藉 由第三滑塊300及第四滑塊400，往復蓮動連結部75b係往 復蓮動於上下方向42。 若依據上述之構成，則根據上述左右方向41之往復蓮動 動作及上述上下方向42之往復蓮動動作的組合’往復蓮動 連结部75b係進行左右上下之往復蓮動動作。連結於往復 運動連結部75b之固定台座76及磁控管磁氣電路32也進行 左右上下之往復蓮動動作。 經濟部智慧財產局員工消費合作社印製 圖6係顳示進行等速直線往復蓮動其他機構。圖6係與圖 4同樣觀看磁控管磁氣電路32之背面側之圖。使馬達43(或 馬達44)之旋轉蓮動通過齒輪箱77將往復運動連結部78成 為直線運動。該情形，軸78a係不旋轉，而磁控管磁氣電 路32係通過固定台座79與往復蓮動連結部78連結。根據馬 達43之正旋轉，與注復蓮動連結部78之長度方向的注復蓮 動一起Μ等速注復蓮動於直線狀。 與圖4所示構成之情形同犠，組合圖6所示2個機構使磁 19 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（I7) 控管磁氣電路32往復蓮動於上下方向及左右方向，可構成 圖3或圖5所示之磁控管注復運動機構。 画10及圖11係顯示左右方向之往復運動動作中馬達1旋 轉之情形（旋轉角2 ίτ弧度）的上下方向42之往復運動動作 中馬達旋轉角依存性。並顯示使左右方向之往復運動動作 使馬達在一次旋轉之時間內對上下方向使往復蓮動動作馬 達要四次旋轉。在圖7及圖8所謂「規格之位置j係Κ最大 注復蓮動振幅/2除Κ各注復蓮動點之位置的值。 歷8及圖9係顯示左右方向之注復蓮動動作中隨著馬達旋 轉往復運動位置之經時變化。 圖11係為使往復蓮動於左右方向41馬達之旋轉角相位為 0徑度時及1/4 π徑度時之磁控管磁氣電路32的往復運動軌 跡。該情形，係除了交叉之幾個點，使左右方向之往復蓮 動軌跡在一次往復之間，使磁控管磁氣電氣電路32之往復 蓮動軌跡不一致。電漿體之往復蓮動軌跡不一致，則靶材 利用效率變高。另外*使往復運動於左右方向4 1馬達之旋 轉角相位在1 / 8 λ徑度時，如圖1 2所示，使磁控管磁氣電 路32之往復運動軌跡在往復時因為會一致，則靶材利用效 率變低。 圖13Α到圖13C係顯示將磁控管磁氣電路之寬幅做為90mm 將左右方向41(Y方1¾)之往復運動衝程做為120mm時，上下 方向42 (X方向）之往復蓮動振幅變化到0〜40mm為止時做為 靶材利用效率的模擬結果而侵蝕之深度（圖中深度方向）的 分布。磁控管磁氣電路之大小係做為90ntmX652mmX35nim * 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -20 - (請先閱讀背面之注意事項再填寫本頁)Printed by A7 _B7_ in the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (10) The reciprocating direction of the gas circuit 32, so the figure of the magnetron reciprocating mechanism 33 in the magnetron cathode 12a on the upper side Show plus K is omitted. The magnetron magnetic circuit 32 is composed of a central magnet 32a, a peripheral magnet 32b, and a yoke 32c. This structure is the same as the previous magnetron magnetic circuit. The target-side surface of the central magnet 32a is an N-pole, and the target-side surface of the outer magnet 32b is an S-pole. The surface of each of the center magnet 32a and the outer peripheral magnet 32t > on the target side is parallel to the surface of the target 14. With the magnetron magnetic circuit 32, on the surface of the target 14, an arc-shaped lines of 'magnetic force are developed into a closed look, what is called " torus " on the surf ace of the target 14 by the magnetron magnetic circuit 32). By applying a voltage to the magnetic field lines and the target, the interaction between the magnetic field lines and the electric field lines is used to cause the electrons to spiral in the magnetic field lines. As a result, the number of ionization collisions of the sputtered gas molecules and electrons in the vacuum container 11 is increased, and a high-density magnetron plasma is generated in the magnetic field. When a voltage is applied to the cathode body 31 by a power source (not shown), a discharge is generated between the trays 16 corresponding to the target material 14. As a result, the target material 14 is sputtered by the magnetron electric propeller body, and the target material is deposited on the substrate 15 on each tray 16. Between the sputtering and film formation, the tray 16 and the substrate 15 are heated by a heater 17. The basic operation of the top-sputter film-forming device and the structure of the operation will be described with reference to M. After opening the main valve 2 2 K exhaust mechanism 1 8 to evacuate the internal space 13 of the vacuum container 11, the heater 17 is turned on. The paper size of the heater 17 applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -13- i ----; --------, © 农 ------- -Order --------- Line J. (Please read the notes on the back before filling out this page) Printed by A7 _B7_ of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A thermocouple (not shown) is installed, and the thermocouple measures the temperature of the heater 17. The temperature control unit (not shown) is used to control the supply of power to the heater to a set temperature. Furthermore, in the internal space 1 3 of the vacuum container 11, the well-known tray transfer mechanism (not shown) transfers the respective substrates 15 mounted on a plurality of pairs of trays 16 to K in a continuous manner. Next, a gas introduction mechanism (not shown) supplies a sputtering gas to the internal space 13 of the vacuum container 11 through the gas introduction pipe 19. The sputter gas is temporarily ejected from the gas introduction pipe 19 into the shield plate 21 * and then ejected from the gas ejection port 20 toward the surface of the target material 14. As a sputtering gas, the film formation of M metal film usually uses inert gas such as Ar ·, the film formation of M oxide uses inactive gas and oxygen gas, and the film formation of nitride is used for inert gas. Add nitrogen gas. After that, the magnetron reciprocating mechanism 33M is operated as described later, and power is supplied to the cathode body 31 from a power source (not shown). The cathode body 31 is made of M metal material, and the target material 14 is fixed by M. The cathode body 31 is electrically connected to a metal pad KK (not shown). On the target 14, an ionizing plasma is generated. When the material having the target material 14 is an insulator, RF power is supplied to the cathode body 31. The substrate 15 is continuously conveyed, and the positive ions in the plasma are continuously sputtered on the substrate 15 to form a film by sputtering the surface of the target 14. Next, the detailed configuration of the magnetron reciprocating mechanism 33 will be described, and the operation of the magnetron magnetic circuit 32 will be described with reference to this. The operation of the magnetron magnetic circuit 3 2 is a combination of a substrate conveying direction 23 and a reciprocating motion 41 parallel to the direction (referred to as the left-right direction in FIG. 2), and a direction perpendicular to the substrate conveying direction 41 (in 2 (referred to as the up-down direction in FIG. 2). Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -14-.i ---- ^ ---------------- Order ----- ---- Line (Please read the notes on the back before filling this page) Printed by A7 _B7_, a member of the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives V. Description of the invention (12) As shown in Figure 1, the magnetron reciprocating lotus mechanism 33. It is provided with: a motor 43 to cause a reciprocal motion 42; a motor 44 to cause a reciprocal motion 41; a phase control unit 45; and a reciprocal frequency control unit (recipr_o cal frequency contro 1 ler ·) 46. The arrangement of the motors 43 and 44 shown in FIG. 1 is not strictly accurate. The specific examples described later are representative examples of the configurations. The magnetron reciprocating mechanism 33 and the magnetron gas circuit 32 are connected by a connecting portion 47. The phase control unit 45 is for adjusting the phase during the reciprocating motion of the magnetron magnetic circuit 32. Control at the most appropriate phase. When the phase control unit 45 is used, for example, when the reciprocating motion of the reciprocating motion of the left-right reciprocating motion 41 in the vertical direction and the reciprocating motion of the reciprocating motion 42 in the up-down direction is four times, if the 0 degree (r ; ad) or 1/4; r diameter (rad) Thor phase difference, then the maximum use efficiency (use efficiency) of the target can be obtained. The reciprocating frequency control unit 46 controls the frequencies of the reciprocating motions 41 and 42. FIG. 2 is a view of the reciprocating motion of the magnetron magnetic circuit 32 on the upper side in FIG. 1 as viewed from the target 14 side. FIG. 2 shows a recessed area of the 48 series formed on the back side of the cathode main body 31 in order to receive the magnetron magnetoelectricity 32 by M. The magnetron magnetic circuit 32 * is in the recess 48 * and performs a reciprocating motion 41 in a direction parallel to the substrate conveying direction 23, and simultaneously performs a reciprocating motion 42 in a vertical direction in the substrate conveying direction 23. The reciprocating lotus motion of the magnetron magnetic circuit 32 is a combination of two reciprocating lotus motions 41 and 42. Figure 2 shows the magnetron magnetic circuit 3 2 positioned on the lower left side of the reciprocating motion as shown by the solid line, and shown on the right as measured by the dashed line. China National Standard (CNS) A4 Specification (210 X 297 mm) —15 — ^ ----: ------------------ Order ------- --Line} / (Please read the note on the back? Matters before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs κB7_ V. Description of the Invention (I3) Magnetron Magnetic Circuit 32. The magnetron magnetic circuit 32 is caused to reciprocate in a parallel direction (left and right direction) and a vertical direction (up and down direction) to the substrate conveying direction 23, and the entire surface of the target 14 becomes evenly rotten. Carved (erode). Fig. 3 shows the magnetron magnet circuit 32 as the magnetron cathode 120 provided with the magnetron reciprocating mechanism 33 reciprocatingly. The magnetron cathode 120 is provided on the upper wall portion 11 a of the vacuum container 11. In FIG. 3, the components are substantially the same as those in FIG. At 圔 3, the part corresponding to the rake material 14 in FIG. 1 is the target material 51 and the backing plate 5 2. 5 3 is the cathode main body. The cathode body 5 3 is fixed to the upper wall portion 11 a by an insulator 34. A pedestal 54 is attached to the back surface of the cathode body 53. An up-and-down oscillating block slider crank 55 and a right-and-left oscillatin_g block slider crank 56 are fixed to the stand 54 and a motor 57 is further installed. A magnetron magnetic circuit 32 is mounted on the lower side of the reciprocating movement portion 56 in the left-right direction via a connection portion 47. The reciprocating part 5 5 in the up-and-down direction causes the magnetron magnetic circuit 32 to reciprocate in the up-and-down direction 42 according to the power of the motor 57. The control magnetic circuit 32 moves back and forth in the left-right direction 41 to hide the mechanism. The magnetron injection / return movement mechanism 33 shown in Fig. 1 is composed of an up-and-down © reciprocating moving portion 55 and a left-right reciprocating portion 56. More specific configuration examples of the up-and-down reciprocating lotus moving portion 55 and the left-and-right reciprocating lotus moving portion 56 will be described later. The vacuum container 11 and the cathode main body 5 3 are insulated by an insulator 3 4 Μ electrical office. Secondly, referring to FIG. 4 and FIG. 5A and FIG. 5B, in order to realize the magnetron reciprocating machine, the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)-1 6-J ---- ^ --- ----- Θ 衣 -------- Order --------- line. (Please read the precautions on the back before filling this page) A7 B7 Employee Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs An example of the basic structure of the fifth and third invention description (M) structure 33 (including the reciprocating portion 55 in the up-down direction and the reciprocating portion 56 in the left-right direction in FIG. 3), and the specific structure of this combination Examples plus M description. Fig. 4 shows an example of a basic configuration 'Fig. 5A and Fig. 5B are specific configuration examples. From FIG. 4 to FIG. 5, the elements of “'and the aforementioned elements” are substantially the same. FIG. 4 is a diagram viewed from the back side of the magnetron magnetic circuit 32. FIG. The magnetron magnetic circuit 32 moves along the trajectory of the sinusoidal function over time. The magnetron magnetic circuit 32 only moves back and forth in the direction of the arrow 61. This reciprocating motion is caused by the rotation of the handle 62 with the rotation of the motor 43 (or the motor 44). 63 and 64 are rotation shafts at both ends of the shank 62, so that the shank 62 can rotate freely. The rotation shaft 63 is coupled to the rotation driving shaft of the motor 43, and the rotation shaft 64 is attached to the back of the magnetron magnetic circuit 32. The fixing screw 66 is fixed to the slider 6 of the pedestal 65, and it can be freely as shown by arrow 67. slide. The pedestal 65 is a parallel slider that is fixed and stopped in the direction of the arrow 67 by the guide members 69 5 70. Therefore, the magnetron magnetic circuit 32 cannot move freely in the direction of arrow 67. In this way, the reciprocating motion of the magnetron magnetic circuit 32 is limited to the direction of the arrow 61. When the handle 62 is the rotation axis 63 and the rotation is performed as the origin plus K, the other end performs a uniform circular motion. And * The slider 68 provided on the rotation axis 64 moves freely in the direction of the arrow 67. In addition, the movement direction of the magnetron magnetic circuit 32 is restricted by M and slider guide members 69 and 70, so M cannot move in the same direction. As a result, the magnetron magnetic circuit 3 2 performs a reciprocating motion with a speed change according to a sine wave in the direction of the arrow 61. The mechanism shown in FIG. 4 uses the magnetron reciprocating mechanism shown in FIG. 1 or 3. Corresponds to the direction shown by the upper arrow 61. This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 mm) -17----- ^ ----------- 丨!丨 Order --------- line (please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7 _ V. Description of the invention (I5) The movement 41 causes the reciprocating part 56 in the left-right direction to use the mechanism shown in FIG. 4. FIG. 5A shows a pedestal 54 provided with a motor 57a for reciprocating in the left-right direction, a motor 57b for reciprocating in the up-down direction, and a reciprocating part 56 in the left-right direction and a reciprocating part 55 in the up-down direction. The lower edge portion of the pedestal 54 is fixed to the opposite edge portion of the cathode body 53 described above. The mechanism shown in FIG. 5A is a slider structure part including four parts of a first slider 100, a second slider 200, a third slider 300, and a fourth slider 400. Each of the sliders 100 · and 200 is clearly shown in FIG. 5B as shown by the cross section M of line B_B in FIG. 5A. The slider convex portion 501 and the slider concave portion 502 are fitted. A ball bearing 503 is provided between the two, so that the slider convex portion 501 and the slider concave portion 502 slide relatively smoothly. When M is specifically added, the left and right reciprocating part 56 is composed of the handle 7 1 a and the first slider 100 and the second slider 200. The first slider 100 is composed of a slider concave portion 72, a slider convex portion 73a, and an unillustrated ball bearing. The upper side of the second slider 2 0 0 * is attached to the motor 5 7 b. One end of the handle 7 1 a is a rotary drive shaft 5 7 a-1 connected to the motor 5 7 a. When the motor 57 is operated, the power is transmitted through the handle 71a and the connecting rod 74a, and the slider recesses 73 of the second slider 200 are reciprocated by the respective engagement relationships of the first slider 100 and the second slider 200. Left and right direction 41. The slider projections 73c * of the second slider 200 are fixed to the pedestal 54 and are functionally equivalent to the guide members 69 and 70 of the slider shown in Fig. 4. The up-and-down reciprocating lotus motion portion 55 is composed of a handle 7 1 b, a third slider 300, and a fourth slider 400. One end of the handle 7 1 b is connected to the rotary drive of the motor 5 7. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)-1 8------: -------- ---------- Order --------- line (please read the notes on the back before filling this page) A7 __B7___ V. Description of the invention (ι〇 (Please read the phonetic on the back first) Please fill in this page again for 3 items) Moving shaft 57b-1. The third slider 300 is composed of a slider convex portion 73b, a slider concave portion 75a, and a ball bearing (not shown). The slider convex portion 73b 'is equivalent to both The guide member of the slider illustrated in Fig. 4. As shown in Fig. 5B, the fourth slider 400 is composed of a slider convex portion, a slider concave portion, and a ball bearing (not shown). The slider concave portion 75a is fixed. On the upper part of the structure 75c, the slider convex part 501 of the fourth block 400 is fixed to the lower part of the member 75c. The slider concave part 502 of the fourth slider 400 is connected to the handle 71b by the connecting part 74c. The magnetron magnetic circuit 32 is connected to the member 7 5 c through the fixed base 76 and the reciprocating connection portion 7 5 b. In this structure, the motor 5 7 b is operated by the third slider 300 And fourth slide 400, the reciprocating lotus connection portion 75b is the reciprocating lotus in the up-down direction 42. According to the above-mentioned structure, the reciprocating lotus movement according to the combination of the reciprocating lotus movement in the left-right direction 41 and the reciprocating lotus movement in the up-down direction 42 is described above. The connecting portion 75b performs a reciprocating motion of left and right. The fixed base 76 and the magnetron magnetic circuit 32 connected to the reciprocating connection 75b also perform a reciprocating motion of left and right. Consumption by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs The cooperative prints Fig. 6 to show the other mechanism for performing constant-speed linear reciprocating motion. Fig. 6 is a view of the back side of the magnetron magnetic circuit 32 as shown in Fig. 4. The rotation lotus of the motor 43 (or the motor 44) The reciprocating connection portion 78 is linearly moved by the gear box 77. In this case, the shaft 78a is not rotated, and the magnetron magnetic circuit 32 is connected to the reciprocating connection portion 78 through the fixed base 79. According to the motor 43, Forward rotation, along with the injection of the compound movement in the length direction of the injection of the compound movement 78. The compound injection of the compound lotus moves at a constant speed in a straight line. As in the case of the structure shown in FIG. 4, the two mechanisms shown in FIG. 6 are combined. Make magnetic 19 This paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A7 _B7_ V. Description of the invention (I7) Controlled magnetic circuit 32 The up and down direction and left and right direction can constitute the magnetron repetition movement mechanism shown in Fig. 3 or 5. Fig. 10 and Fig. 11 show the rotation of the motor 1 during the reciprocating motion in the left and right direction (rotation angle 2 ίτ radian) Motor rotation angle dependence during reciprocating motion in the up-and-down direction 42. It also shows that the reciprocating motion of the left and right directions causes the motor to rotate the reciprocating motion of the motor up and down four times within one rotation. In the so-called "specification position j" of Fig. 7 and Fig. 8, the value of the position of the maximum amplitude of the compound injection lotus / 2 divided by the position of each injection point of the compound lotus. The calendar 8 and Fig. 9 show the operation of the compound lotus in the left-right direction. The change of the position of the reciprocating motion with the rotation of the motor over time. Figure 11 shows the magnetron magnetic circuit when the reciprocating lotus moves in the left and right direction. The rotation angle phase of the 41 motor is 0 degrees and 1/4 π degrees. The reciprocating trajectory of 32. In this case, except for a few points that cross, the reciprocating trajectory of the left and right direction is between one reciprocation, making the reciprocating trajectory of the magnetron magnetic electrical circuit 32 inconsistent. Plasma If the reciprocating motion of the reciprocating lotus is inconsistent, the utilization efficiency of the target becomes higher. In addition, when the reciprocating motion is in the left-right direction, the rotation angle phase of the motor is 1/8 λ, as shown in Fig. 12, making the magnetron Because the reciprocating trajectory of the magnetic circuit 32 will be consistent during reciprocation, the utilization efficiency of the target material becomes low. Figures 13A to 13C show that the width of the magnetron magnetic circuit is 90mm, and the left and right directions 41 (Y square When the reciprocating stroke of 1¾) is 120mm, the up and down direction is 42 (X direction) The distribution of the depth of erosion (the depth direction in the figure) as the simulation result of target utilization efficiency when the amplitude of the lotus motion changes to 0 ~ 40mm. The size of the magnetron magnetic circuit is 90ntmX652mmX35nim * This paper size is applicable to China National Standard (CNS) A4 Specification (210 X 297 mm) -20-(Please read the precautions on the back before filling this page)
A7 _B7___ 五、發明說明（18 ) (請先閱讀背面之注音2事項再填寫本頁) 磁場強度係K靶材表面約做為1 300G，而上下方向之往復 蓮動的馬達旋轉相位角係做為0徑度。該結果，在圖13 A係 上下方向之往復蓮動振幅為Omra，利用率成為37¾。在圖13B 係上下方向之注復運動振幅為20mm，利用率成為43%。在 圖13.C係上下方向之往復蓮動振幅為40iem，利用率成為46% 。由上述模擬結果，關於上下方向41之往復運動，可知振 幅愈大則靶材之利用效率愈提高。 經濟部智慧財產局員工消費合作社印製 圖14A到圖14D係顯示將同樣磁控管磁氣電路之寬幅做為 90mm將上下方向42 (X方向）之往復運動衝程做為40ιπηι時* 使左右方向41 (Υ方向）之往復運動振幅變化到0〜1 2 0 μ為 止時做為靶材利用效率之模擬結果而侵蝕之深度（圖中深 度方向）的分布。又磁控管磁氣電路之大小係做為90ffijnX 652πιιη5(35πιιπ，磁場強度係W靶材表面約做為1300G，而上 下方向之注復蓮動的馬達旋轉相位角係做為0徑度。該結 果，在画1 4 Β係水平方（¾之往復蓮動振幅為8 0 in m，利用率 成為39%。在圖14D係水平方向之往復蓮動振幅為120mm， 利用率成為46¾。由上述模擬結果，關於左右方向42之注 復蓮動，可知振幅愈大則靶材之利用效率係愈提高。 又*圖1 5係顯示靶材利用效率之相位差依存性。該情肜 ，磁控管磁氣電路32之寬幅係90rom，X方向之衝程係40mm ，Y方向之衝程係1 2 0 m ία。由圖1 5可知，相位差，係左右方 向之往復蓮動周期為上下方向之往復運動周期四倍時，靶 材利用效率係相位差0徑度或K 1 /4 π徑度之整數倍使靶材 利用效率成為最大。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -21- A7 _B7_ 五、發明說明（l9 ) (請先閱讀背面之注意事項再填寫本頁) 由其他觀點，依據本發明濺鍍成膜裝置，係關於磁控管 磁氣電路之往復蓮動動作，將基板之某一點通過靶材的時 間之間，使基板搬送方向之往復蓮動動作Μ複數周期進行 往復運動為較佳。基板之某一點在搬送時通過的時間之間 ，若進行複數周期之基板搬送方向的往復蓮動，則在基板 之所有點中可進行均勻成膜。 依據本發明濺鍍成膜裝置之注復蓮動機構係不限定定於 前述之機構。譬如做為馬達使用脈衝馬達也可。又Μ本發 明*係不限定於前述之靶材遮護板之形狀，氣體噴出位置 ，氣體噴出方法。 經濟部智慧財產局員工消費合作社印製 濺鍍成膜裝置僑屬在線上型、分批型、單片型之其中之 一也可。前逑之實施形態係磁控管磁氣電路一個之情形* 但磁控管磁氣電路之數，係按照所使用靶材之大小或該磁 氣電路之寬幅的大小任意所決定。又磁控管陰極之配設個 數，也按照必要任意所選擇。如AN ELV Α公司製之「AN ELV A C-3500」、「ANELVA C-3900」之單片形濺鍍成膜裝置 (cluster-tool sputter deposition system)之情形，通 常，係使基板制止，該情形，係將磁控管磁氣電路之注復 運動周期比成膜時間非常短，或在成膜中，將該磁控管磁 氣電路K整數倍之周期往復蓮動即可。 〔發明之效果〕 Μ上之說明顯示若依據本發明，由於將配置於靶材之後 側的磁控管磁氣電路在平行於基板搬送方向及垂直於基板 搬送方向進行往復運動，因而可提高該靶材之利用效率5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) —22 - 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（20 ) 同時可改善濺鍍成膜之基板上的薄膜之膜厚分布及膜質分 布。 〔圖式之簡單說明〕 圖1係有關本發明濺鍍成膜裝置之重要部分的縱剖面圖。 圖.2係顯示磁控管磁氣電路之往復蓮動狀態。 圖3係顯示磁控往復運動機構縱剖面圖之一例。 圖4係顯示為了構成磁控管往復運動機構之基本的構成 平面圖13 圖5 A係顯示組合圖4所示之基本的構成而磁控管往復運 動機構之縱剖面圖具體例。 圖5 B係圖5 A中之B - B線剖面圖。 圖6係顯示為了構成磁控管往復運動機構之其他基本的 構成平面圖。 圖7係顯示上下方向之往復蓮動動作中馬達旋轉角依存 性。 圖8係顯示上下方向之往復運動動作中馬達旋轉角依存 性0 圖9係顯示隨著馬達旋轉往復運動位置之經時變化。 圖10傜顯示隨著馬達旋轉往復運動位置之經時變化。 圖11係顯示使注復蓮動於上下方向馬達之旋轉角相位為 0徑度時及1 / 4 π徑度時之磁鐵磁氣電路的往復運動軌跡。 圖1 2係顯示使往復運動於上下方向馬達之旋轉角相位為 1 / 8徑度時之磁鐵磁氣電路的注復蓮動軌跡。 圖1 3 A係顯示將磁控管磁氣電路之寬幅做為9 0 m m而將左 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 23 ----：----------------^---------線 I (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（21 ) 右方向（Y方_ )之往復蓮動衝程傲為120mm之情形，將上下 方向（X方向）之往復運動振幅做為Omm時之靶材利用效率之 模擬。 圖13B係顧示將磁控管磁氣電路之寬幅做為90mm而將左 右方向（Y方向）之往復蓮動衝程做為120 inra之情形，將上下 方向（X方向）之往復蓮動振幅做為20mm時之靶材利用效率 之模擬。 圖13C係顯示將磁控管磁氣電路之寬幅做為90mm而將左 右方向（Y方向）之往復蓮動衝程做為1 2 0 ππη之情形，將上下 方向（X方向）之往復運動振幅做為40πιιη時之靶材利用效率 之撗擬。 圖14/\係顯示將磁控管磁氣電路之寬幅做為90mm而將左 右方向（X方向）之往復蓮動衝程做為40mm之情形，將上下 左右方向（Y方向）之注復運動振幅做為0 m m時之靶材利用效 率之模擬結果。 圖14B係顯示將磁控管磁氣電路之寬幅做為90mm而將上 下方向（X方向）之往復運動衝程做為40ιηπι之情形，將左右 方向41 (Y方向）之往復蓮動振幅做為80mm時之靶材利用效 率之模擬結果。 圖14C係顯示將磁控管磁氣電路之寬幅做為90mm而將上 下方向（X方向）之往復蓮動衝程做為40min之情形，將左右方 向4 1 (Y方向）之注復蓮動振幅做為1 0 0 hi m時之靶材利用效率 之模擬結果。 圖1 4 D係顯示將磁控管磁氣電路之寬幅做為9 0 mm而將上 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) -24 - ----^------—--------訂---------線·. (請先閲讀背面之注意事項再填寫本頁) A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 22 ) 下 方 向（X方 向 )之往復運動衝程做為40m m之情形， 將 左 右 方 向 41 (Y方 向 )之注復蓮動振幅做為120 m m 時 之 靶 材 利 用 效 率 之 模 擬結 果 〇 圖 15係 顯 示 靶 材之利用效率的 相 位 差 依 存 特 性 〇 圔 .16係 顯 示 先 前之在線上型濺 鍍 成 膜 裝 置 之 重 要 部 分 構 成 縱 剖面 圖 〇 圖 17係 磁 控 管 磁氣電路之前視 画 〇 圖 1 8係 顯 示 靶 材上之磁力線及 高 密 度 電 漿 體 之 產 生 狀 態0 圖 19儳 顯 示 靶 材上之高密度電 漿 體 之 產 生 狀 態 平 面 圖 〇 圖 2 0係 顯 示 靶 材之侵蝕狀態剖 面 圖 〇 圖 21係 _ 20中 之A-A線剖面圖 [ 元 件編 號 之 說 明〕 11 * * * ♦ ♦ ♦ 真 空 容 器 11 a * ♦ * * ♦ 上 壁 部 lib . ♦ ♦ ♦ ♦ 下 壁 部 12 a . ♦ * * * 磁 控 管 陰極 12b . * * * * 磁 控 管 陰極 13 * * 內 部 空 間 14 * * * * * * 靶 材 15 * · 基 板 16 * * 托 盤 17 * ♦ 加 熱 器 18 * * 排 氣 機 構 19 * * * * * * 氣 體 導 入管 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -25 - -^w--------訂---------線 A7 B7 五、發明說明（23 ) 2 0......氣 經濟部智慧財產局員工消費合作社印製 21… 21a . 22 .. 23 .. 31.. 32 .. 32a . 32b . 32c . 33 .. 34.. 3 5.. 41.. 42 .. 43 .. 44 .. 45 .. 46 .. 47.. 48 .. 5 1.. 52 53.. ♦ ♦ ♦ ♦ ，遮 .間 .主 .基 .陰 .磁 •中 •外 .軛 .陰 .絕 .靶 .平 .垂 .馬 .馬 .相 .往 .連 .凹 .靶 .墊 .陰 jas 體 護 隙 閥 板 極 控 央 周 鐵 極 緣 材 行 直 達 達 位 復 結 處 材 板 極 噴出部 板 搬送方向 主體 管磁氣電路 磁鐵 磁體 磁控管往復蓮動機構 物 遮護板 方商（左右方尙）之往復蓮動動作 方向（上下方向）之往復運動動作 控制部 蓮動頻率控制部 部 材料 主體 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 26 - 26 (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（ 24 ) 54 .. .架 台 55 .. ,* . *上 下 方 向 往 復 運 動 部 56 .. *44 .左 右 方 向 往 復 蓮 動 部 57 .. ♦ ♦ ♦ .馬 達 57a . ♦ * * ‘馬 達 57a- 1.. .旋 轉 驅 動 軸 57b . * ♦ .馬 達 57b- 1.. .旋 轉 驅 動 軸 6 1.. •前 頭 62.. .柄 63.. .旋 轉 軸 64.. .旋 轉 軸 65.. +台 座 66., .固 定 螺 钉 67.. ，箭 頭 68.. .滑 塊 69.. .引 導 構 件 70.. .引 導 構 件 71a . .柄 71b . .柄 72 .. .滑 塊 凹 部 73 .. •滑 塊 凹 部 73a . .滑 塊 凸 部 73b ‘ .滑 塊 凸 部 (請先閱讀背面之注咅？事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） -27 - 訂： --線’ 五、發明說明（25 A7 B7 經濟部智慧財產局員工消費合作社印製 73c.... 74a 75a 75b 75c 76 . 77 . 78 . 78a 79 . 100 200 300 400 501 . 502 . 503 . 110 . 111 . 111a 11 lb . 112a . 112b . 1 13… .滑塊凸部 連結棒 滑塊凹部 往復運動連結部 構件 固定台座 齒輪箱 往復蓮動連結部 軸 固定台座 第一滑塊 第二滑塊 第三滑塊 第四滑塊 滑塊凸部 滑塊凹部 滾珠軸承 間隙 真空容器 上壁部 .下壁部 .磁控管陰極 .磁控管陰極 .基板 (請先閱讀背面之注音？事項再填寫本頁) -------訂—--- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 28 A7 B7 五、發明說明（26 ) 經濟部智慧財產局員工消費合作社印製 114... .•托 盤 115.. ..靶 材 116.. .•加 熱 器 117.. ..内 部 空 間 118.. ..氣 體 導 入 管 118a. ，.氣 體 噴 入 部 119.. ..遮 護 板 120 .. ..靶 材 體 121 .. ..磁 控 管 磁 氣 電路 123 .. ..絕 緣 物 124.. ..靶 材 遮 護 板 125.. …基 板 搬 送 方 向 126 .. ..中 央 磁 鐵 127 .. ..外 周 磁 鐵 128.. ..軛 鐵 129 .. 力 線 130.. ..高 密 度 電 漿 體 (請先閱讀背面之注音？事項再填寫本頁)A7 _B7___ 5. Description of the invention (18) (Please read the note 2 on the back before filling in this page) The magnetic field strength is about 1 300G on the surface of the K target, and the rotation phase angle of the reciprocating motor in the up and down direction is made 0 degree. As a result, the amplitude of the reciprocating motion in the up-and-down direction of FIG. 13A is Omra, and the utilization rate is 37¾. The amplitude of the injection motion in the vertical direction of FIG. 13B is 20 mm, and the utilization rate is 43%. In Figure 13.C, the amplitude of the reciprocating motion in the up and down direction is 40iem, and the utilization rate is 46%. From the above simulation results, regarding the reciprocating motion in the up-and-down direction 41, it can be known that the larger the amplitude, the more efficient the utilization of the target material is. Figures 14A to 14D printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs show that when the width of the same magnetron magnetic circuit is set to 90mm, and the reciprocating stroke of up and down 42 (X direction) is set to 40 μm The distribution of the depth of erosion (the depth direction in the figure) when the amplitude of the reciprocating motion in the direction 41 (Υ direction) changes to 0 to 120 μ as the simulation result of the target utilization efficiency. The size of the magnetic circuit of the magnetron is 90ffijnX 652πιη5 (35πιπ, the magnetic field strength is about 1300G on the surface of the W target, and the rotation phase angle of the motor in the up-and-down direction is set to 0 degree. The As a result, the amplitude of the reciprocating lotus motion in the horizontal side of the 14B series is 80 in m, and the utilization rate is 39%. In the horizontal direction of FIG. 14D, the reciprocating lotus vibration amplitude is 120mm, and the utilization rate is 46¾. As a result of the simulation, regarding the injection of the compound in the left and right directions 42, it can be seen that the larger the amplitude, the more efficient the utilization efficiency of the target. Also * Figure 15 shows the dependency of the phase difference on the utilization efficiency of the target. The wide width of the tube magnetic circuit 32 is 90 rom, the stroke in the X direction is 40 mm, and the stroke in the Y direction is 120 m. As can be seen from Fig. 15, the phase difference is the reciprocating cycle of the left and right directions. When the reciprocating cycle is four times, the target utilization efficiency is an integer multiple of 0 degree of phase difference or K 1/4 π diameter to maximize the utilization efficiency of the target. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -21- A7 _B7_ V. The Invention (L9) (Please read the precautions on the back before filling this page) From another point of view, the sputtering film-forming device according to the present invention is about the reciprocating motion of the magnetron magnetic circuit to pass a certain point of the substrate through the target Between the time of the substrate, it is better to make the reciprocating motion of the substrate conveying direction in multiple cycles. The reciprocating motion of the substrate conveying direction in the plural cycles is performed during the time when a certain point of the substrate passes during the conveying. , The uniform film formation can be performed at all points of the substrate. The injection molding mechanism of the sputtering film formation device according to the present invention is not limited to the aforementioned mechanism. For example, a pulse motor may be used as a motor. The invention is not limited to the shape of the target shield, the gas ejection position, and the gas ejection method. The Intellectual Property Bureau of the Ministry of Economic Affairs's consumer cooperative prints the sputtering film-forming device on-line, batch, single One of the chip types is also possible. The previous implementation is a case of a magnetron magnetic circuit. * However, the number of magnetron magnetic circuits depends on the size of the target used or the magnetism. The width of the circuit is arbitrarily determined. The number of magnetron cathodes is also arbitrarily selected as necessary. For example, "AN ELV A C-3500" and "ANELVA C-3900" manufactured by AN ELV Α In the case of a cluster-tool sputter deposition system, in general, the substrate is stopped. In this case, the injection cycle of the magnetron magnetic circuit is very short than the film formation time. Or during the film formation, the period of the integral multiple of the magnetron magnetic circuit K can be moved back and forth. [Effects of the invention] The description on M shows that according to the present invention, since the magnetic The controllable magnetic circuit reciprocates in parallel to the substrate conveying direction and perpendicular to the substrate conveying direction, thereby improving the utilization efficiency of the target. 5 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) —22-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ V. Description of the invention (20) At the same time, it can improve the film thickness distribution and film quality distribution of the thin film on the sputtered substrate. [Brief Description of the Drawings] FIG. 1 is a longitudinal sectional view of an important part of a sputtering film forming apparatus according to the present invention. Fig. 2 shows the reciprocating state of the magnetron magnetic circuit. Fig. 3 shows an example of a longitudinal sectional view of a magnetron reciprocating mechanism. Fig. 4 is a plan view showing a basic configuration of the magnetron reciprocating mechanism in a plan view. Fig. 5A is a specific example of a longitudinal sectional view of the magnetron reciprocating mechanism in combination with the basic configuration shown in Fig. 4. Fig. 5B is a sectional view taken along the line B-B in Fig. 5A. Fig. 6 is a plan view showing other basic constitutions for constructing a magnetron reciprocating mechanism. Fig. 7 is a graph showing the dependence of the motor rotation angle on the up-and-down reciprocating motion. Fig. 8 shows the dependence of the motor rotation angle on the reciprocating motion in the up-and-down direction. Fig. 9 shows the change with time of the reciprocating position as the motor rotates. Figure 10 (a) shows the change over time in the position of the reciprocating motion as the motor rotates. Fig. 11 shows the reciprocating trajectory of the magnetic circuit of the magnet when the rotation angle phase of the motor that moves Zhu Fulian up and down is 0 degree and 1/4 π degree. Fig. 12 shows the trajectory of the complex magnetic circuit of the magnet magnetic circuit when the rotation angle phase of the reciprocating motor in the up-down direction is 1/8 degree. Figure 1 A shows that the width of the magnetron magnetic circuit is 90 mm, and the left paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 23 ----:- --------------- ^ --------- Line I (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (21) In the case where the reciprocating lotus stroke in the right direction (Y square _) is 120mm, the reciprocating amplitude in the up and down direction (X direction) is used to simulate the target utilization efficiency when Omm. FIG. 13B shows a case where the width of the magnetron magnetic circuit is 90 mm and the reciprocating stroke in the left-right direction (Y direction) is 120 inra, and the reciprocating lotus amplitude in the up-down direction (X-direction) is shown. As a simulation of target utilization efficiency at 20mm. FIG. 13C shows a case where the width of the magnetron magnetic circuit is 90 mm, and the reciprocating stroke of the left-right direction (Y direction) is 1 2 0 ππη, and the reciprocating amplitude of the up-down direction (X direction) is shown. As a simulation of target utilization efficiency at 40 pm. Figure 14 / \ shows the case where the width of the magnetron's magnetic circuit is 90mm and the reciprocating stroke in the left-right direction (X direction) is 40mm. Simulation results of target utilization efficiency at 0 mm. FIG. 14B shows a case where the width of the magnetron magnetic circuit is 90 mm, and the reciprocating stroke of the up and down direction (X direction) is 40 μm, and the reciprocating amplitude of the left and right direction 41 (Y direction) is taken as Simulation results of target utilization efficiency at 80mm. FIG. 14C shows a case where the width of the magnetron magnetic circuit is set to 90 mm, and the reciprocating stroke of the up and down direction (X direction) is set to 40 min. The simulation results of the target utilization efficiency at 100 μm amplitude. Figure 1 4 D shows that the width of the magnetron magnetic circuit is 90 mm, and the size of the previous paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -24----- ^ ---------------- Order --------- line ·. (Please read the notes on the back before filling in this page) A7 B7 Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by a consumer cooperative. V. Description of the invention (22) The reciprocating stroke in the downward direction (X direction) is 40 mm, and the moving amplitude of the injection compound lotus in the left and right direction 41 (Y direction) is 120 mm. Utilization efficiency simulation results. Fig. 15 shows the phase-dependent dependence characteristic of the utilization efficiency of the target material. 圔. 16 shows the longitudinal sectional view of the important parts of the previous on-line sputtering film formation device. Fig. 17 shows the magnetron. The front view of the magnetic circuit. Figure 18 shows the state of generation of magnetic lines of force and high-density plasma on the target. Figure 19 儳 shows the plane of generation of high-density plasma on the target. 〇 Figure 2 is a sectional view showing the erosion state of the target material. 〇 Figure 21 is a sectional view taken along the line AA in [_ 20] [Description of the component number] 11 * * * ♦ ♦ ♦ Vacuum container 11 a * ♦ * * ♦ Upper wall part ♦ ♦ ♦ ♦ Lower wall part 12 a. ♦ * * * Magnetron cathode 12b. * * * * Magnetron cathode 13 * * Internal space 14 * * * * * * Target 15 * · Substrate 16 * * Tray 17 * ♦ Heater 18 * * Exhaust mechanism 19 * * * * * * Gas introduction tube (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specification (210 x 297 mm) -25--^ w -------- Order --------- Line A7 B7 V. Description of the invention (23) 2 0 ...... Ministry of Gas Economy Printed by the Intellectual Property Bureau's Consumer Cooperatives 21… 21a. 22 .. 23 .. 31 .. 32 .. 32a. 32b. 32c. 33 .. 34 .. 3 5 .. 41 .. 42 .. 43 .. 44 . 45 .. 46 .. 47 .. 48 .. 5 1 .. 52 53. ♦ ♦ ♦ ♦ ♦ ， ♦ ♦ ♦ ♦ ，。 ♦ ♦ ♦ ♦ ， ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Flat. Vertical. Horse. Horse. Phase. Link. Concave. Target. Pad. Yin jas body gap valve plate pole control central Zhou iron pole edge material line to reach the position of the junction plate material ejection part plate transport direction Main body tube magnetic circuit magnet magnet magnetron reciprocating lotus mechanism object shield plate (left and right side) reciprocating lotus motion direction (up and down direction) reciprocating motion control section lotus frequency control section material main body Paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 26-26 (Please read the notes on the back before filling out this page) A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives V. Invention Description (24) 54... Gantry 55 .., *. * Reciprocating part 56 in the up-down direction 56 .. 44 Reciprocating part 57 in the left-right direction 57. ♦ ♦ ♦. Motor 57a. ♦ * * ... Rotary drive shaft 57b. * ♦. Motor 57b- 1 .. Rotary drive shaft 6 1 .. • Front 62 ... Handle 63 .. Rotary shaft 64 .. Rotary shaft 65 .. + Base 66 .. Set screw 67 .. Arrow 68. Slider 69. Guide member 70. Guide member 71a ... Handle 71b ... Handle 72 ... Slider recess 73 ... Slider recess 73a ... Slider projection 73b '. Slider Convex (Please read the note on the back first? Please fill in this page again for this matter) This paper size applies Chinese National Standard (CNS) A4 specification (210x 297 mm) -27-Order: --line 'V. Description of invention 73c .... 74a 75a 75b 75c 76. 77. 78. 78a 79. 100 200 300 400 501. 502. 503. 110. 111. 111a 11 lb. 112a. 112b. 1 13 .... Rod slider recessed portion Reciprocating linking portion member fixed pedestal gear box reciprocating lotus linking portion shaft fixed pedestal first slider second slider third slider fourth slider slider convex portion slider concave portion ball bearing gap vacuum container Wall part. Lower wall part. Magnetron cathode. Magnetron cathode. Substrate (please read the note on the back? Matters before filling out this page) ------- Order ----- This paper size applies to China Standard (CNS) A4 specification (210 X 297 mm) 28 A7 B7 V. Description of invention (26) Printed by the consumer co-operatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 114 .... · Tray 115 .... Target 116 .. .. Heater 117 ... Internal space 118 ... Gas inlet pipe 118a. Gas injection unit 119 ... shield 120 .. target body 121 .... magnetron magnetic circuit 123 .. insulator 124 .. target shield 125 ..… substrate transfer direction 126 .. .. central magnet 127 .. .. peripheral magnet 128... Yoke 129 .. force line 130... High density plasma (please read the note on the back first? (Fill in this page again)
-I — ！ I I — 訂 I I I I I 1 I 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 29-I —! I I — order I I I I I 1 I This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 29