JPH1041285A - Etching method of indium-gallium-phosphorus layer - Google Patents
Etching method of indium-gallium-phosphorus layerInfo
- Publication number
- JPH1041285A JPH1041285A JP8193338A JP19333896A JPH1041285A JP H1041285 A JPH1041285 A JP H1041285A JP 8193338 A JP8193338 A JP 8193338A JP 19333896 A JP19333896 A JP 19333896A JP H1041285 A JPH1041285 A JP H1041285A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- layer
- ingap
- ingap layer
- metal mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 101100240461 Dictyostelium discoideum ngap gene Proteins 0.000 claims description 4
- 239000007788 liquid Substances 0.000 abstract description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052753 mercury Inorganic materials 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 240000002329 Inga feuillei Species 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置の製造
方法に関し、とくにＩｎＧａＰ層の食刻方法に関する。The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for etching an InGaP layer.
【０００２】[0002]
【従来の技術】ＩｎＧａＰは、ＡｌＧａＡｓに代わる材
料としてＧａＡｓ系の半導体装置への応用が広く研究さ
れている。ＧａＡｓ基板またはＧａＡｓ層状に形成され
たＩｎＧａＰ層を所定の形状に加工するには、通常、食
刻（エッチング）法によって形成する。食刻液として
は、ＧａＡｓ基板との選択性が良いことから、特に、塩
酸系の食刻液が多く用いられている。2. Description of the Related Art InGaP has been widely studied as a material that replaces AlGaAs and is applied to GaAs-based semiconductor devices. In order to process a GaAs substrate or an InGaP layer formed in a GaAs layer shape into a predetermined shape, it is usually formed by an etching method. As the etching liquid, a hydrochloric acid-based etching liquid is particularly often used because of its good selectivity to the GaAs substrate.
【０００３】ここで、食刻のマスクとして金属膜を用い
ると、この金属膜をデバイスの電極として用いることが
できるのでフォトリソグラフィ工程を減らすことができ
る利点がある。しかし、マスクとして金属膜を用いた場
合、金属膜の周辺で、食刻を阻害する反応が起こり、金
属膜周辺にエッチング残差がアイランド状に残り、加工
精度が十分に得られないといった問題があった。Here, if a metal film is used as an etching mask, this metal film can be used as an electrode of a device, so that there is an advantage that the number of photolithography steps can be reduced. However, when a metal film is used as a mask, a reaction that inhibits etching occurs around the metal film, leaving an etching residue around the metal film in an island shape, resulting in insufficient processing accuracy. there were.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、ＩｎＧａＰ
層を食刻によって加工して半導体装置を製造する際に、
金属マスクを用いても、食刻時間の短縮が可能で、加工
精度の優れた食刻方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention relates to InGaP
When manufacturing a semiconductor device by processing a layer by etching,
An object of the present invention is to provide an etching method capable of shortening the etching time even with a metal mask and having excellent processing accuracy.
【０００５】[0005]
【課題を解決するための手段】本発明は、表面にマスク
として金属膜を形成したＩｎＧａＰ層を、食刻液中に浸
漬し、同時に光照射することを特徴とするＩｎＧａＰ層
の食刻方法に関する。SUMMARY OF THE INVENTION The present invention relates to a method for etching an InGaP layer, comprising immersing an InGaP layer having a metal film formed on its surface as a mask in an etching solution and simultaneously irradiating light. .
【０００６】この食刻液として塩酸系食刻液を用いる
と、制御性良くＩｎＧａＰを食刻できるので特に好まし
い。It is particularly preferable to use a hydrochloric acid-based etching solution as the etching solution because InGaP can be etched with good controllability.
【０００７】前記ＩｎＧａＰ層とは、ＩｎＧａＰの層だ
けでなくＩｎＧａＰの基板も含むものである。ＩｎＧａ
Ｐの層をＧａＡｓ基板または層上に形成し、ＩｎＧａＰ
層を所定のパターンに加工する場合であっても、上記塩
酸系食刻液を用いることにより、ＩｎＧａＰ層を選択的
に食刻することができる。The InGaP layer includes not only an InGaP layer but also an InGaP substrate. InGa
A P layer is formed on a GaAs substrate or layer and the InGaP
Even when the layer is processed into a predetermined pattern, the InGaP layer can be selectively etched by using the above-mentioned hydrochloric acid-based etching solution.
【０００８】[0008]
【発明の実施の形態】本発明の食刻方法では、例えば図
１のように、ＩｎＧａＰ層とこの上に形成した金属マス
クを有する試料を、食刻液の中に浸しながら水銀灯等で
光を照射する。DESCRIPTION OF THE PREFERRED EMBODIMENTS In an etching method according to the present invention, as shown in FIG. 1, for example, a sample having an InGaP layer and a metal mask formed thereon is immersed in an etching solution and irradiated with a mercury lamp or the like. Irradiate.
【０００９】図２は、従来の方法により、ＧａＡｓ層上
のＩｎＧａＰ層を金属マスクを用いて食刻したときの形
状を模式的に示したものである。即ち、金属マスク近傍
のＩｎＧａＰ層の食刻が阻害され、金属マスクから離れ
た部分と比べて食刻速度が極めて遅くなる結果、パター
ン形状がマスクパターンより広がる現象が見られる。FIG. 2 schematically shows a shape when an InGaP layer on a GaAs layer is etched using a metal mask by a conventional method. That is, the etching of the InGaP layer in the vicinity of the metal mask is hindered, and the etching speed becomes extremely slow as compared with the portion away from the metal mask.
【００１０】本発明者は、従来の食刻方法では、金属膜
およびＩｎＧａＰと食刻液が接触するときに発生する正
の電荷が半導体層の表面に蓄積され、これが食刻を妨げ
るものと推定し、この正電荷を中和する方法を検討した
結果本発明に至ったものである。即ち、本発明で食刻の
際に光照射すると、ＩｎＧａＰの表面に負の電荷が励起
され、これが食刻によって蓄積される正の電荷を中和す
るので食刻が妨げられることがないのである。その結
果、本発明によれば、図３に示すように金属マスクの形
状に忠実にＩｎＧａＰ層が食刻される。The present inventor estimates that in the conventional etching method, positive charges generated when the etching liquid contacts the metal film and InGaP are accumulated on the surface of the semiconductor layer, which hinders the etching. However, as a result of studying a method for neutralizing this positive charge, the present invention has been achieved. That is, when light is irradiated during etching in the present invention, a negative charge is excited on the surface of InGaP, and this neutralizes the positive charge accumulated by the etching, so that the etching is not hindered. . As a result, according to the present invention, the InGaP layer is etched exactly as shown in FIG.
【００１１】本発明に用いられる塩酸系食刻液とは、Ｉ
ｎＧａＰの食刻に用いられる塩酸を含む水溶液であっ
て、塩酸水溶液の他、例えば塩酸とリン酸の水溶液、塩
酸と硫酸の水溶液、塩酸とリン酸と硫酸の水溶液等のよ
うに、食刻に悪影響を与えないその他の酸を含んでいて
も良く、また、食刻を改善するためのその他の添加剤を
含んでいても良い。これらの食刻液は、例えばＩｎＧａ
Ｐ層の下地となる基板または層、使用する金属マスク、
製造工程等を考慮して適宜選択される。The hydrochloric acid-based etching solution used in the present invention is I
An aqueous solution containing hydrochloric acid used for etching nGaP. In addition to an aqueous hydrochloric acid solution, for example, an aqueous solution of hydrochloric acid and phosphoric acid, an aqueous solution of hydrochloric acid and sulfuric acid, and an aqueous solution of hydrochloric acid, phosphoric acid, and sulfuric acid are used. It may contain other acids that do not adversely affect, and may contain other additives for improving etching. These etching solutions are, for example, InGa
A substrate or layer serving as a base of the P layer, a metal mask to be used,
It is appropriately selected in consideration of the manufacturing process and the like.
【００１２】本発明の金属膜としては、食刻液に対して
全く侵されないか、ＩｎＧａＰに比べて食刻速度が十分
に遅いものであって、容易に加工できるものが使用され
る。このようなものとしては、例えば、Ａｕ、Ｔｉ、
Ｗ、Ｎｉ、およびＡｕＧｅ等の金属の薄膜、およびこれ
らの金属の薄膜を積層したものを挙げることができる。As the metal film of the present invention, a metal film which is not easily attacked by an etching solution or whose etching speed is sufficiently lower than that of InGaP and which can be easily processed is used. Such materials include, for example, Au, Ti,
Examples thereof include thin films of metals such as W, Ni, and AuGe, and stacked thin films of these metals.
【００１３】これらの金属マスクパターンの形成方法は
特に制限はなく、例えばフォトレジスト等を用いるリフ
トオフによって形成することができる。The method of forming these metal mask patterns is not particularly limited. For example, the metal mask patterns can be formed by lift-off using a photoresist or the like.
【００１４】本発明で照射する光は、ＩｎＧａＰのバン
ドギャップ以上のエネルギー（６５０ｎｍ以下の波長）
を持つ光であれば使用することができるが、特に紫外線
を用いることが好ましい。光源としては、特に制限はな
く、水銀灯のほかキセノンランプ、レーザー等を使用す
ることができる。The light irradiated in the present invention has an energy higher than the band gap of InGaP (wavelength of 650 nm or less).
Any light having the following can be used, but it is particularly preferable to use ultraviolet light. The light source is not particularly limited, and a mercury lamp, a xenon lamp, a laser, or the like can be used.
【００１５】また、光の照射強度は、光照射によって励
起される電子数が、食刻によって蓄積される正電荷を打
ち消すのに必要な量以上となるように設定する。上記の
光源の一般的なものは、通常は十分な光強度を有してい
るが、必要に応じてさらに強力な光源を用いてもよい。The light irradiation intensity is set so that the number of electrons excited by the light irradiation is equal to or more than an amount necessary to cancel the positive charges accumulated by etching. The general ones of the above light sources usually have sufficient light intensity, but a more powerful light source may be used if necessary.
【００１６】また、食刻の際の温度、時間等は、食刻液
の組成等を考慮して、食刻形状が最適になるように設定
することができる。Further, the temperature, time, and the like at the time of etching can be set so as to optimize the etching shape in consideration of the composition of the etching liquid and the like.
【００１７】また、本発明は、ＩｎＧａＰの基板、また
はＩｎＧａＰの層のいずれにも適用が可能である。特に
ＧａＡｓの基板または層上に形成されたＩｎＧａＰの層
のパターニングに好適に用いられる。即ち本発明は、例
えば、ＨＢＴ（ヘテロ接合バイポーラトランジスタ）、
ＨＥＭＴ（Ｈｉｇｈ Ｅｌｅｃｔｒｏｎ Ｍｏｂｉｌｉ
ｔｙ Ｔｒａｎｓｉｓｔｏｒ）等の半導体装置の製造に
用いると、プロセス時間と歩留まりの改善を図ることが
できる。Further, the present invention can be applied to either an InGaP substrate or an InGaP layer. In particular, it is suitably used for patterning an InGaP layer formed on a GaAs substrate or layer. That is, the present invention provides, for example, an HBT (heterojunction bipolar transistor),
HEMT (High Electron Mobili
When used in the manufacture of a semiconductor device such as a Ty Transistor, process time and yield can be improved.
【００１８】[0018]
【実施例】以下に実施例を示し、本発明をさらに詳細に
説明する。The present invention will be described in more detail with reference to the following examples.
【００１９】［実施例１］まず、基板ＧａＡｓの表面
に、１００ｎｍのｐ−ＧａＡｓ層と２５０ｎｍのｎ−Ｉ
ｎＧａＰ層を積層した。[Example 1] First, a 100 nm p-GaAs layer and a 250 nm nI layer were formed on the surface of a substrate GaAs.
An nGaP layer was stacked.
【００２０】このｎ−ＩｎＧａＰ層の表面にフォトレジ
ストを塗布し、露光、現像して、金属マスクを形成する
位置にレジストの開口を設けた。ついで、５０ｎｍのＡ
ｕ（金）と２０ｎｍのＴｉの薄膜を積層した後、リフト
オフにより、所定のパターン状に金属マスクを加工し
た。A photoresist was applied to the surface of the n-InGaP layer, exposed and developed, and a resist opening was formed at a position where a metal mask was formed. Then, 50 nm A
After laminating a thin film of u (gold) and 20 nm of Ti, a metal mask was processed in a predetermined pattern by lift-off.
【００２１】この試料を、食刻液（塩酸：リン酸：硫
酸：水＝１：１：１：１（Ｒ．Ｔ．））に浸し、同時に
１００Ｗの水銀灯を用いて約１５ｃｍの距離から紫外線
を照射した。そして、食刻を２分間続けた。This sample is immersed in an etching solution (hydrochloric acid: phosphoric acid: sulfuric acid: water = 1: 1: 1: 1 (RT)), and simultaneously irradiated with ultraviolet light from a distance of about 15 cm using a 100 W mercury lamp. Was irradiated. And the etching was continued for 2 minutes.
【００２２】食刻後、この基板表面をＳＥＭ（走査型電
子顕微鏡）で食刻形状を観察したところ、図４に模式的
に示すような形状となっていた。即ち、金属マスク１以
外の表面は、ｐ−ＧａＡｓ層２が露出しており、マスク
形状を反映してｎ−ＩｎＧａＰ層が食刻されていること
がわかった。After the etching, the surface of the substrate was observed by SEM (scanning electron microscope) to find that the substrate had a shape as schematically shown in FIG. That is, it was found that the p-GaAs layer 2 was exposed on the surface other than the metal mask 1, and the n-InGaP layer was etched to reflect the mask shape.
【００２３】［比較例１］実施例１において、紫外線照
射を行わない以外は実施例１を繰り返した。Comparative Example 1 Example 1 was repeated except that ultraviolet irradiation was not performed.
【００２４】食刻形状は、図５に模式的に示すように、
金属マスクに隣接して、ｎ−ＩｎＧａＰ層の表面が平坦
な部分３が存在し、少し離れて、ｎ−ＩｎＧａＰ層の斜
面部分４が存在し、金属マスクから１〜２μｍ離れたと
ころからｐ−ＧａＡｓ層２が露出している。この比較例
から、紫外線照射がない場合は、金属マスクの周囲はエ
ッチングが阻害され、食刻形状が悪くなることがわか
る。The etching shape is, as schematically shown in FIG.
A portion 3 where the surface of the n-InGaP layer is flat is present adjacent to the metal mask, and a slope portion 4 of the n-InGaP layer is located slightly away from the metal mask. The GaAs layer 2 is exposed. From this comparative example, it can be seen that when there is no ultraviolet irradiation, the etching around the metal mask is hindered and the etched shape becomes poor.
【００２５】[0025]
【発明の効果】本発明によれば、ＩｎＧａＰを食刻によ
って加工して半導体装置を製造する際に、金属マスクを
用いても、食刻時間が短く、また加工精度の優れた食刻
方法を提供することができる。According to the present invention, when manufacturing a semiconductor device by processing InGaP by etching, even if a metal mask is used, an etching method with a short etching time and excellent processing accuracy is provided. Can be provided.
【図１】本発明の食刻方法を示す図である。FIG. 1 is a diagram showing an etching method of the present invention.
【図２】従来の食刻方法による食刻形状を示す図であ
る。FIG. 2 is a diagram showing an etched shape according to a conventional etching method.
【図３】本発明による食刻形状を示す図である。FIG. 3 is a diagram illustrating an etched shape according to the present invention.
【図４】本発明による食刻形状のＳＥＭ写真の模式図で
ある。FIG. 4 is a schematic view of an SEM photograph of an etched shape according to the present invention.
【図５】従来の食刻方法による食刻形状のＳＥＭ写真の
模式図である。FIG. 5 is a schematic view of an SEM photograph of an etched shape by a conventional etching method.
１ 金属マスク ２ 下地のｐ−ＧａＡｓ層 ３ ｎ−ＩｎＧａＰ層の表面が平坦な部分 ４ ｎ−ＩｎＧａＰ層の斜面部分 DESCRIPTION OF SYMBOLS 1 Metal mask 2 Underlying p-GaAs layer 3 Part with flat surface of n-InGaP layer 4 Slope part of n-InGaP layer
Claims (3)
ｎＧａＰ層を、食刻液中に浸漬し、同時に光照射するこ
とを特徴とするＩｎＧａＰ層の食刻方法。1. A semiconductor device comprising a metal film formed on a surface thereof as a mask.
A method for etching an InGaP layer, wherein the nGaP layer is immersed in an etching solution and irradiated with light simultaneously.
を特徴とする請求項１記載のＩｎＧａＰ層の食刻方法。2. The method for etching an InGaP layer according to claim 1, wherein said etching solution is a hydrochloric acid-based etching solution.
されていることを特徴とする請求項１または２記載のＩ
ｎＧａＰ層の食刻方法。3. The I according to claim 1, wherein said InGaP layer is formed on GaAs.
Etching method of nGaP layer.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8193338A JPH1041285A (en) | 1996-07-23 | 1996-07-23 | Etching method of indium-gallium-phosphorus layer |
| FR9709226A FR2751788B1 (en) | 1996-07-23 | 1997-07-21 | PROCESS FOR BINDING AN INGAP LAYER |
| GB9715325A GB2315597B (en) | 1996-07-23 | 1997-07-21 | A process for etching an ingap layer |
| KR1019970034251A KR100236662B1 (en) | 1996-07-23 | 1997-07-22 | Photoetching method of an ingap layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8193338A JPH1041285A (en) | 1996-07-23 | 1996-07-23 | Etching method of indium-gallium-phosphorus layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1041285A true JPH1041285A (en) | 1998-02-13 |
Family
ID=16306240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8193338A Withdrawn JPH1041285A (en) | 1996-07-23 | 1996-07-23 | Etching method of indium-gallium-phosphorus layer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH1041285A (en) |
| KR (1) | KR100236662B1 (en) |
| FR (1) | FR2751788B1 (en) |
| GB (1) | GB2315597B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008041853A (en) * | 2006-08-04 | 2008-02-21 | Casio Comput Co Ltd | Method of processing semiconductor thin film, method of manufacturing semiconductor device, and semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4414066A (en) * | 1982-09-10 | 1983-11-08 | Bell Telephone Laboratories, Incorporated | Electrochemical photoetching of compound semiconductors |
| US5270245A (en) * | 1992-11-27 | 1993-12-14 | Motorola, Inc. | Method of forming a light emitting diode |
-
1996
- 1996-07-23 JP JP8193338A patent/JPH1041285A/en not_active Withdrawn
-
1997
- 1997-07-21 GB GB9715325A patent/GB2315597B/en not_active Expired - Fee Related
- 1997-07-21 FR FR9709226A patent/FR2751788B1/en not_active Expired - Fee Related
- 1997-07-22 KR KR1019970034251A patent/KR100236662B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008041853A (en) * | 2006-08-04 | 2008-02-21 | Casio Comput Co Ltd | Method of processing semiconductor thin film, method of manufacturing semiconductor device, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9715325D0 (en) | 1997-09-24 |
| GB2315597B (en) | 1999-02-24 |
| FR2751788A1 (en) | 1998-01-30 |
| FR2751788B1 (en) | 2000-07-07 |
| KR980011975A (en) | 1998-04-30 |
| GB2315597A (en) | 1998-02-04 |
| KR100236662B1 (en) | 2000-01-15 |
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