JPH1041223A - 露光方法および露光装置 - Google Patents

露光方法および露光装置

Info

Publication number
JPH1041223A
JPH1041223A JP8213131A JP21313196A JPH1041223A JP H1041223 A JPH1041223 A JP H1041223A JP 8213131 A JP8213131 A JP 8213131A JP 21313196 A JP21313196 A JP 21313196A JP H1041223 A JPH1041223 A JP H1041223A
Authority
JP
Japan
Prior art keywords
exposure
photosensitive material
light
projection
exposure area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8213131A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1041223A5 (enExample
Inventor
Masato Shibuya
眞人 渋谷
Yasushi Oki
裕史 大木
Kazuya Okamoto
和也 岡本
Soichi Yamato
壮一 大和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8213131A priority Critical patent/JPH1041223A/ja
Priority to US08/899,909 priority patent/US5851707A/en
Publication of JPH1041223A publication Critical patent/JPH1041223A/ja
Publication of JPH1041223A5 publication Critical patent/JPH1041223A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8213131A 1996-07-24 1996-07-24 露光方法および露光装置 Pending JPH1041223A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8213131A JPH1041223A (ja) 1996-07-24 1996-07-24 露光方法および露光装置
US08/899,909 US5851707A (en) 1996-07-24 1997-07-24 Microlithography projection-exposure masks, and methods and apparatus employing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8213131A JPH1041223A (ja) 1996-07-24 1996-07-24 露光方法および露光装置

Publications (2)

Publication Number Publication Date
JPH1041223A true JPH1041223A (ja) 1998-02-13
JPH1041223A5 JPH1041223A5 (enExample) 2004-11-04

Family

ID=16634095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8213131A Pending JPH1041223A (ja) 1996-07-24 1996-07-24 露光方法および露光装置

Country Status (2)

Country Link
US (1) US5851707A (enExample)
JP (1) JPH1041223A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417516B1 (en) 1999-03-26 2002-07-09 Nec Corporation Electron beam lithographing method and apparatus thereof

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3766165B2 (ja) * 1997-03-07 2006-04-12 株式会社ニコン 画像形成方法及び感光材料
US6534242B2 (en) 1997-11-06 2003-03-18 Canon Kabushiki Kaisha Multiple exposure device formation
US6377337B1 (en) 1998-05-02 2002-04-23 Canon Kabushiki Kaisha Projection exposure apparatus
US6136509A (en) * 1998-06-05 2000-10-24 Creo Srl Method of exposing thermoresist
US6387597B1 (en) 1998-06-05 2002-05-14 Creo Srl Method for exposing features on non-planar resists
US6590635B2 (en) 1998-06-19 2003-07-08 Creo Inc. High resolution optical stepper
US6593064B1 (en) 1998-06-19 2003-07-15 Creo Inc. High resolution optical stepper
JP3123548B2 (ja) * 1998-06-30 2001-01-15 キヤノン株式会社 露光方法及び露光装置
JP3352405B2 (ja) 1998-09-10 2002-12-03 キヤノン株式会社 露光方法及びそれを用いたデバイス製造方法並びに半導体デバイス
US6107011A (en) * 1999-01-06 2000-08-22 Creo Srl Method of high resolution optical scanning utilizing primary and secondary masks
US6238850B1 (en) 1999-08-23 2001-05-29 International Business Machines Corp. Method of forming sharp corners in a photoresist layer
US6894295B2 (en) * 2000-12-11 2005-05-17 Leepl Corporation Electron beam proximity exposure apparatus and mask unit therefor
US6541166B2 (en) 2001-01-18 2003-04-01 International Business Machines Corporation Method and apparatus for lithographically printing tightly nested and isolated device features using multiple mask exposures
AU2003222799A1 (en) * 2002-04-15 2003-10-27 Carl Zeiss Smt Ag Interferometric measuring device and projection illumination installation comprising one such measuring device
US7510818B2 (en) * 2002-12-09 2009-03-31 Pixelligent Technologies Llc Reversible photobleachable materials based on nano-sized semiconductor particles and their optical applications
US20050054210A1 (en) * 2003-09-04 2005-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple exposure method for forming patterned photoresist layer
US20050202352A1 (en) * 2004-03-11 2005-09-15 Worcester Polytechnic Institute Systems and methods for sub-wavelength imaging
KR100741110B1 (ko) * 2006-02-15 2007-07-19 삼성에스디아이 주식회사 광 파이버 및 플라즈마 디스플레이 패널의 전극 형성 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3491336B2 (ja) * 1994-05-31 2004-01-26 株式会社ニコン 露光方法及び露光装置
US5532090A (en) * 1995-03-01 1996-07-02 Intel Corporation Method and apparatus for enhanced contact and via lithography

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417516B1 (en) 1999-03-26 2002-07-09 Nec Corporation Electron beam lithographing method and apparatus thereof
KR100379285B1 (ko) * 1999-03-26 2003-04-10 엔이씨 일렉트로닉스 코포레이션 전자 빔 리소그라피 방법 및 그 제조장치

Also Published As

Publication number Publication date
US5851707A (en) 1998-12-22

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