JPH10340873A - Apparatus for treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating substrates, wherein even when notched portions such as a notch or a cut-out for orientation flatness are formed on the periphery of the substrates, and the substrate edges of the notched portions can be properly cleaned also. SOLUTION: Washing brushes 11 and 12 of a main washing unit 2 and washing brushes 21 and 22 of a subsididary washing unit 3 wake contact with the surfaces of a wafer W held by a wafer holding unit 1 at the different positions from each other, and scrub the surfaces and the edge of the wafer W. Also both a rotary center O1 of the washing brushes 11 and 12 and a rotary center O2 of the washing brushes 21 and 22 are positioned within the region enclosed by a circle drawn with the trail of the edge of the wafer W, and the washing brushes 11 and 12 and the washing brushes 21 and 22 are rotated in the direction opposite to each other. Thus an apparent moving direction of the washing brushes 11 and 12 with respect to the periphery of the wafer W is opposite to an apparent moving direction of the washing brushes 21 and 22 with respect to the periphery of the wafer W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing processing on substrates to be processed such as a semiconductor wafer, a glass substrate for a liquid crystal display device, and a glass substrate for a PDP (plasma display panel).

[0002]

2. Description of the Related Art A semiconductor device manufacturing process includes a process of forming a fine pattern by repeatedly performing processes such as film formation and etching on the surface of a semiconductor wafer (hereinafter, simply referred to as “wafer”). For fine processing, the surface of the wafer itself and the surface of the thin film formed on the wafer surface must be kept clean. Therefore, the wafer is cleaned as necessary. For example, after a thin film formed on the surface of a wafer is polished with an abrasive (slurry), foreign matter such as slurry remains on the wafer surface, and it is necessary to remove the foreign matter.

FIG. 11 is a plan view showing a configuration example of a cleaning apparatus for cleaning a wafer surface, and FIG.
2 is a side view of the configuration shown in FIG. FIG.
Referring to FIG. 12 and FIG. 12, the wafer cleaning apparatus includes three holding rollers 251, 252 and 253 which rotate while holding the wafer W horizontally while abutting against the end face of the wafer W.
And a cleaning unit 210 for cleaning the upper surface of the wafer W held by the holding rollers 251, 252 and 253.

[0004] Three holding rollers 251, 252 and 2
Of the 53, the holding roller 251 is a driving roller to which the driving force generated by the motor M is transmitted via the driving belt V. Further, the remaining holding rollers 252 and 253
Is a driven roller that rotates with the rotation of the wafer W. The cleaning unit 210 is disposed at a position where the cleaning unit 210 does not interfere with the holding rollers 251, 252, and 253 so as to cover a region from the center to the peripheral edge of the wafer W. Cleaning unit 21
Reference numeral 0 denotes a configuration in which a cleaning brush 213 is fixed to the lower surface of a base plate 212 having a substantially circular shape. This cleaning brush 2
At substantially the center of the nozzle 13, a nozzle 220 for discharging the cleaning liquid is provided.

When cleaning the wafer W, the holding roller 2
Driving force is applied to the driving roller 251 in a state where the wafer W is held by 51, 252 and 253, and the wafer W is rotated counterclockwise in FIG. Then, with the cleaning brush 213 in contact with the upper surface of the wafer W in this state, the cleaning unit 210 is rotated counterclockwise in FIG. 11 at a high speed by a rotation driving mechanism (not shown), and the cleaning liquid is discharged from the nozzle 220. Thus, the upper surface of the wafer W is scrub-cleaned.

[0006]

However, in the above-described apparatus, when a notch or an orientation flat (orientation flat) or the like is formed in the peripheral portion of the wafer W to be cleaned, the wafer W in the notch is formed. In some cases, uneven cleaning was caused on the end face of the sample. For example, when the cleaning brush 213 is driven to rotate at a higher speed than the wafer W, and both the rotation direction of the cleaning brush 213 and the rotation direction of the wafer W are counterclockwise, the contact surface of the cleaning brush 213 is apparently Move counterclockwise with respect to the surface of the wafer W. Therefore, as shown in FIG. 13, when the notch 260 is formed in the peripheral portion of the wafer W, the cleaning brush 213 enters the notch 260 and
The right side face 261 of the second side 60 contacts the right side face 261, and the right side face 261 is mainly scrub-cleaned. Therefore, foreign matter such as slurry may remain on the left end surface 262 of the notch 260 without being removed.

Further, as shown in FIG. 14, when an orientation flat 270 is formed at the peripheral edge of the wafer W, the intersection 272 between the vertical line lowered from the rotation center of the cleaning brush 213 to the orientation flat end face 271 and the orientation flat end face 271. Also FIG.
Since the contact surface of the cleaning brush 213 moves from the outside to the inside of the wafer W in the right-hand side end surface region G on the right side of the above, foreign substances attached to the end surface region G are positively removed by the cleaning brush 213. In contrast,
In the orientation flat end face region N on the left side in FIG. 14 of the intersection 272, the contact surface of the cleaning brush 213 is
Move from the inside to the outside, the end face region N
There is a possibility that foreign matter adhering to the surface may remain without being removed by the cleaning brush 213.

The end surface 271 of the orientation flat 270 is shown in FIG.
As shown in (a) to (c), scrub cleaning is performed in order from the right end with the rotation of the wafer W, and the cleaning brush 2 near the left end of the orientation flat end surface 271 is compared with other portions.
13 is relatively short. Therefore, foreign matter such as slurry sometimes remained near the left end of the orientation flat end face 271.

Accordingly, an object of the present invention is to provide a substrate processing apparatus capable of satisfactorily cleaning a substrate end surface in a notch or an orientation flat even if a notch or an orientation flat is formed in a peripheral portion of the substrate. That is.

[0010]

Means for Solving the Problems and Effects of the Invention According to the first aspect of the present invention, there is provided a substrate holding means for holding a substrate having a notch in a peripheral portion, and A substrate rotation drive source for rotating the held substrate; and a substrate rotatably provided around a different rotation axis along a direction substantially perpendicular to the surface of the substrate held by the substrate holding means. A first scrub member and a second scrub member for scrub-cleaning the surface of the substrate, a scrub member rotation driving means for rotating the first scrub member and the second scrub member, and a substrate held by the substrate holding means. And a cleaning liquid supply means for supplying a cleaning liquid to the substrate processing apparatus.

According to the first aspect of the present invention, by providing the rotation axis of the first scrub member and the rotation axis of the second scrub member at appropriate positions, the first scrub member is formed on the peripheral edge of the substrate. The direction in which the end face of the cutout is scrubbed can be different from the direction in which the second scrub member scrubs the endface of the cutout. That is, since the end face of the notch formed in the peripheral portion of the substrate can be scrubbed from two different directions, the apparatus shown in FIGS. A portion that could not be cleaned can be scrubbed well. Therefore, not only the surface region of the substrate but also the entire end surface of the substrate can be cleaned.

In order to make the scrub direction of the first scrub member different from the scrub direction of the second scrub member, for example, the position of the axis of rotation of the first scrub member with respect to the radial direction of rotation of the substrate and the position of the second scrub member are determined. What is necessary is just to provide so that the position of a rotation axis may mutually differ. That is, it is preferable that the distance between the rotation center of the substrate and the rotation axis of the first scrub member and the rotation axis of the second scrub member be different from each other. In other words, when the substrate is rotated, the trajectory of the edge of the substrate draws the first
The distance from the rotation axis of the scrub member to the rotation axis of the second scrub member from the circumference may be different from each other. However, one of the rotation axis of the first scrubbing member and the rotation axis of the second scrubbing member is provided inside a region surrounded by a circle drawn by the trajectory of the substrate end when the substrate is rotated, and the other is provided in the region. The distance from the circumference drawn by the trajectory of the substrate end to the rotation axis of the first scrub member is the same as the distance from the circumference to the rotation axis of the second scrub member. Also, the scrub direction of the first scrub member and the scrub direction of the second scrub member can be different.

In order to clean the end face of the substrate satisfactorily,
The first scrub member and the second scrub member are preferably provided so as to straddle the peripheral edge of the substrate. According to a second aspect of the present invention, the rotation axis of the first scrubbing member and the rotation axis of the second scrubbing member are both provided inside or outside a circle having a rotation radius of the substrate. 2. The substrate processing apparatus according to claim 1, wherein the driving means includes means for rotating the first scrub member and the second scrub member in contact with the same surface of the substrate held by the substrate holding means in directions opposite to each other. Device.

According to the configuration of the second aspect, the first scrub member and the second scrub member are in contact with the same surface of the substrate. Also, the rotation axis of the first scrub member and the second
The rotation axis of the scrub member is located inside or outside the circle of the radius of rotation of the substrate, and the first scrub member and the second scrub member are driven to rotate in opposite directions.

Thus, the apparent movement direction of the first scrub member with respect to the vicinity of the peripheral portion of the wafer W,
Since the apparent movement directions of the second scrub member with respect to the vicinity of the peripheral edge of the substrate are opposite to each other, even if a notch such as a notch or an orientation flat is formed in the peripheral edge of the substrate, the end face of the notch is good. Can be washed. In this case, even if the rotation axis of the first scrubbing member and the rotation axis of the second scrubbing member are provided at the same position with respect to the rotation radius direction of the substrate, the first scrubbing member with respect to the end face of the cutout portion. The scrub direction and the scrub direction of the second scrub member can be different.

The radius of rotation of the substrate is the maximum radius of a circle drawn by the trajectory of the edge of the substrate as the substrate rotates. In addition, the inside of the circle of the radius of rotation of the substrate is an area inside the circle drawn by the radius of rotation of the substrate around the center of rotation of the substrate, and the outside of the circle of the radius of rotation of the substrate is
The area outside the circle drawn by the radius of rotation of the substrate about the center of rotation of the substrate.

Further, even when the first scrubbing member and the second scrubbing member are driven to rotate in the same direction, the position of the rotation axis of the first scrubbing member with respect to the rotation radius direction of the substrate and the position of the second scrubbing member are determined. If the positions of the rotation axes are different from each other, the end face of the notch is scrubbed from two different directions, so that the end face of the notch can be scrubbed.

According to a third aspect of the present invention, the rotation axis of the first scrub member is provided inside the circle of the rotation radius of the substrate, and the rotation axis of the second scrub member is the circle of the rotation radius of the substrate. And the scrub member rotation driving means includes means for rotating the first scrub member and the second scrub member in contact with the same surface of the substrate held by the substrate holding means in the same direction. The substrate processing apparatus according to claim 1, wherein:

According to the third aspect of the present invention, the rotation axis of the first scrub member is located inside the circle of the rotation radius of the substrate, and the rotation axis of the second scrub member is the circle of the rotation radius of the substrate. When the first scrub member and the second scrub member are rotationally driven in the same direction, the apparent movement direction of the first scrub member with respect to the vicinity of the periphery of the wafer W and the movement of the wafer W The apparent movement directions of the second scrub member with respect to the vicinity of the peripheral portion are opposite to each other.
Therefore, similarly to the configuration of the second aspect, even if a notch or a notch such as an orientation flat is formed in the peripheral portion of the wafer, the end face of the notch can be cleaned well.

Note that even when the first scrub member and the second scrub member are rotationally driven in directions opposite to each other,
If the position of the rotation axis of the first scrub member and the position of the rotation axis of the second scrub member with respect to the radial direction of rotation of the substrate are different from each other, the end face of the cutout portion is scrubbed from two different directions. Therefore, the end face of the notch can be scrubbed.

According to a fourth aspect of the present invention, the rotation axis of the first scrub member is provided inside the circle of the rotation radius of the substrate, and the rotation axis of the second scrub member is the circle of the rotation radius of the substrate. And the scrub member rotation driving means includes means for rotating the first scrub member and the second scrub member in contact with the different surfaces of the substrate held by the substrate holding means in the same direction. The substrate processing apparatus according to claim 1, further comprising:

According to the above configuration, even when the first scrub member and the second scrub member are in contact with different surfaces of the substrate, if the first scrub member and the second scrub member are rotationally driven in the same direction, The apparent movement direction of the first scrub member with respect to the vicinity of the periphery of the substrate and the apparent movement direction of the second scrub member with respect to the vicinity of the periphery of the substrate are opposite to each other. Therefore, even if a notch or a notch such as an orientation flat is formed in the peripheral portion of the substrate, the end face of the notch can be cleaned well.

Moreover, since the first scrubbing member and the second scrubbing member are brought into contact with different surfaces of the substrate, both surfaces of the substrate can be scrubbed at once. In addition, even when the first scrub member and the second scrub member are rotationally driven in opposite directions, the position of the rotation axis of the first scrub member with respect to the rotational radius direction of the substrate and the rotation axis of the second scrub member. Is provided so as to be different from each other, the end face of the cutout portion is scrubbed from two different directions, so that the end face of the cutout portion can be scrubbed.

According to a fifth aspect of the present invention, there is provided a substrate holding means for holding a substrate having a notch in a peripheral portion, a substrate rotation drive source for rotating the substrate held by the substrate holding means, and the substrate holding means. A first scrub member rotatably provided about a rotation axis along a direction substantially perpendicular to the surface of the substrate held by the means, and contacting different surfaces of the substrate to scrub the respective surfaces; A second scrub member, scrub member rotation driving means for rotating the first scrub member and the second scrub member in opposite directions, and a cleaning liquid for supplying a cleaning liquid to the substrate held by the substrate holding means A substrate processing apparatus comprising: a supply unit.

According to the fifth aspect of the present invention, the first scrubbing member and the second scrubbing member come into contact with different surfaces of the substrate and are driven to rotate in opposite directions to each other. The apparent movement direction of the first scrub member and the apparent movement direction of the second scrub member with respect to the vicinity of the periphery of the substrate are opposite to each other. Therefore, the same effect as the configuration according to claim 4 can be obtained.

According to a sixth aspect of the present invention, in the substrate processing apparatus according to any one of the first to fifth aspects, the first scrub member has a rotation diameter greater than a rotation radius of the substrate. It is. According to the configuration of the sixth aspect, since the first scrub member has a rotation diameter equal to or larger than the rotation radius of the substrate, even if the first scrub member is fixedly arranged, the first scrub member rotates the substrate. If the substrate is arranged so as to cover from the center to the peripheral portion of the substrate, the scrub member can be brought into contact with the entire surface of the substrate by rotating the substrate. Therefore, the surface area of the substrate can be scrubbed well with a simple configuration.

The rotation diameter of the first scrub member is
The maximum diameter of a circle drawn by the trajectory of the end of the first scrub member when the first scrub member rotates. The invention according to claim 7 is characterized in that the first scrubbing member and the second scrubbing member have a protrusion on the side that comes into contact with the substrate. It is a substrate processing apparatus.

According to the seventh aspect of the present invention, the projection enters the notch formed in the substrate, so that the end face of the notch can be cleaned better. According to another aspect of the present invention, there is provided a substrate holding means for holding a substrate having a notch at a peripheral portion, a substrate rotation drive source for rotating the substrate held by the substrate holding means, and a substrate holding means for holding the substrate. Cleaning liquid supply means for supplying a cleaning liquid to the substrate, provided rotatably about a rotation axis along a direction substantially perpendicular to the surface of the substrate held by the substrate holding means,
A scrub member for scrub-cleaning the surface of the substrate, a scrub member rotation driving means for rotating the scrub member, a first position in which the rotation axis is located inside a circle having a rotation radius of the substrate, Moving means for relatively moving the substrate and the scrubbing member such that the axis is displaced to a second position located outside the circle of the radius of rotation of the substrate. Device.

According to the structure of the eighth aspect, the scrub member has a first position where its rotation axis is located inside the circle of the radius of rotation of the substrate and a position where the rotation axis is outside the circle of the radius of rotation of the substrate. To a second position located on the other side. This allows
In a state where the scrub member is displaced to the first position and a state where the scrub member is displaced to the second position,
The directions of movement of the scrub member with respect to the vicinity of the periphery of the substrate are opposite to each other. Therefore, it is possible to satisfactorily clean up to the end face of the notch formed in the peripheral portion of the substrate.

Further, according to the configuration of the eighth aspect, the end face of the notch formed in the peripheral portion of the substrate can be cleaned well without providing a plurality of scrub members. According to a ninth aspect of the present invention, the scrub member has a convex portion on a side that contacts the substrate.
It is a substrate processing apparatus of a statement. According to the configuration of the ninth aspect, the projection enters the notch formed in the substrate, so that the end face of the notch can be more appropriately cleaned.

According to a tenth aspect of the present invention, the substrate holding means rotates while abutting on the end face of the substrate, and at least three holding rollers including a driving roller driven to rotate by transmitting a driving force of a substrate rotation driving source. The substrate processing apparatus according to any one of claims 1 to 9, further comprising a roller. According to the tenth aspect, the substrate to be processed is rotated while its end face is held by the holding roller, so that the contact position between the holding roller and the end face of the substrate constantly changes. Therefore, the entire area of the substrate end surface can be scrubbed well.

[0032]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing a schematic configuration of a wafer cleaning apparatus as a substrate processing apparatus according to the first embodiment of the present invention. FIG.
FIG. 2 is a side view of the wafer cleaning apparatus shown in FIG. 1 as viewed from a direction A in FIG. 1, with some parts omitted for simplicity.

This wafer cleaning apparatus is capable of polishing a thin film formed on the surface of a wafer W by CMP (Chemical Mechanical).
Polishing) This is for removing slurry and unnecessary thin films remaining on the surface of the wafer W after the processing is performed. The apparatus includes a wafer holding device 1 for holding a wafer W horizontally and rotating the wafer W in a horizontal plane.
A main cleaning device 2 for scrub cleaning the upper and lower surfaces of the wafer W held by the wafer holding device 1 is provided. Further, the wafer cleaning apparatus according to the first embodiment is provided with a sub-cleaning apparatus 3 for scrub cleaning the vicinity of the peripheral portion of the wafer W held by the wafer holding apparatus 1.

The wafer holding device 1 has a pair of holding hands 4 and 5 which are arranged to face each other. The holding hands 4 and 5 are provided with three holding rollers 6 and 7 for holding the wafer W, respectively. The holding rollers 6 and 7 are arranged on a circumference corresponding to the shape of the end face of the wafer W, and the wafer W is held horizontally with the end faces abutting on the side faces of the holding rollers 6 and 7.

The driving force of the motor M is transmitted via a belt 8 to one central holding roller 7b of the three holding rollers 7 on the holding hand 5 side. The driving force applied to the central holding roller 7b is transmitted to the holding rollers 7a and 7c via the belts 9 and 10, respectively. Accordingly, when the central holding roller 7b is driven by the motor M, the other two holding rollers 7a and 7c also rotate. As a result, the wafer W held by the holding rollers 6 and 7 rotates. At this time, the holding roller 6 rotates following the rotation of the wafer W.

The holding hands 4 and 5 can move close to and away from each other. Thus, the holding hands 4 and 5 can hold the wafer W between the holding rollers 6 and 7, and can release the holding. The main cleaning device 2 includes an upper cleaning brush 11 and a lower cleaning brush 12 above and below the wafer W held by the wafer holding device 1. Upper cleaning brush 11
The lower cleaning brush 12 is formed in a disk shape having a diameter of the upper cleaning brush 11 and the lower cleaning brush 12 larger than a rotation radius of the wafer W rotated by the wafer holding device 1. Are arranged so as to cover the region from the center to the peripheral portion of the. Upper cleaning brush 1
1 is attached to the lower surface of the disk-shaped brush base 13 and is fixed to the lower end of a rotating shaft 14 disposed along the vertical direction. Similarly, the lower cleaning brush 12 is attached to the upper surface of a disk-shaped brush base 15 and is fixed to the upper end of a rotating shaft 16 arranged along the vertical direction.

The rotation shafts 14 and 16 are provided on a rotation axis O1 that penetrates a region surrounded by a circle drawn by the trajectory of the end face of the wafer W held by the wafer holding device 1. Rotation driving mechanisms 17 and 18 are coupled to the rotation shafts 14 and 16, respectively.
When the driving force is applied to the fourth and fourth brushes 16, the upper cleaning brush 11 and the lower cleaning brush 12 are rotated counterclockwise around the rotation axis O1 extending in the vertical direction. Thereby, the wafer W
The upper and lower cleaning brushes are scrub-cleaned by an upper cleaning brush 11 and a lower cleaning brush 12. At this time, since the wafer W is rotated by the holding roller 7, the position at which the holding rollers 6, 7 abut on the end face of the wafer W changes, and the scrubbing position also changes. Therefore, the wafer W
The cleaning brushes 11 and 12 provided so as to cover the area from the center to the peripheral edge of the wafer W can scrub and clean the entire area of the upper surface and the lower surface of the wafer W without moving the cleaning brush with respect to the wafer W. .

The rotating shafts 14 and 16 are connected to lifting drive mechanisms 19 and 20, respectively. At the time of wafer cleaning, the upper cleaning brush 1 is driven by the lifting drive mechanisms 19 and 20.
1 and the lower cleaning brush 12 are moved in a direction approaching each other, and the wafer W is sandwiched between the cleaning brushes 11 and 12. After the cleaning of the wafer W is completed, the upper and lower cleaning brushes 11 and 12 are moved by the lifting drive mechanisms 19 and 20 in a direction in which the cleaning brushes 11 and 12 are separated from each other, and the cleaning brushes 11 and 12 are separated from the wafer W.

The sub-cleaning device 3 includes an upper cleaning brush 21 above and below the wafer W held by the wafer holding device 1.
And a lower cleaning brush 22. Upper cleaning brush 2
The first cleaning brush 22 and the lower cleaning brush 22 are formed to have smaller diameters than the cleaning brushes 11 and 12 provided in the main cleaning device 2, respectively, and are arranged so as to cover the vicinity of the periphery of the wafer W held by the wafer holding device 1. Have been. The sub-cleaning device 3
The configuration is substantially the same as that of the main cleaning device 2 except that the cleaning brushes 21 and 22 are formed smaller in diameter than the cleaning brushes 11 and 12. The upper cleaning brush 21 and the lower cleaning brush 22 are attached to disk-shaped brush bases 23 and 24, respectively, and the rotating shaft 2 disposed along the vertical direction.
5 and 26 are fixed to the ends.

The rotation shafts 25 and 26 are provided on a rotation axis O2 that penetrates a region surrounded by a circle drawn by the trajectory of the end face of the wafer W held by the wafer holding device 1. The rotation axis O2 is provided such that the position of the wafer W in the rotation radius direction is different from the rotation axis O1. In other words, the rotation axis O1 and the rotation axis O2 are provided such that the distance from the rotation center of the wafer W to the rotation axis O2 is different from the distance from the rotation center of the wafer W to the rotation axis O2.

The rotary shafts 25 and 26 are connected to rotary drive mechanisms 27 and 28, respectively.
When a driving force is applied to the rotating shafts 25 and 26 from 28, respectively, the upper cleaning brush 21 and the lower cleaning brush 22 are rotated clockwise around the rotation axis O2 extending along the vertical direction. That is, the upper cleaning brush 21 and the lower cleaning brush 22 of the sub cleaning device 3 are rotated in the opposite direction to the upper cleaning brush 11 and the lower cleaning brush 12 of the main cleaning device 2. The upper cleaning brush 21 and the lower cleaning brush 22 are respectively attached to the rotating shafts 25 and 26 so that the upper cleaning brush 21 and the lower cleaning brush 22 can be moved closer to and away from the upper and lower surfaces of the wafer W, respectively. Lifting drive mechanisms 29 and 30 for raising and lowering are connected.

Cleaning brush 1 provided in main cleaning device 2
Cleaning liquid supply nozzles 31 and 32 for supplying a cleaning liquid to the wafer W are arranged near the centers of the wafers 1 and 12, respectively. One ends of cleaning liquid supply passages 33 and 34 are connected to the cleaning liquid supply nozzles 31 and 32, respectively. The other ends of the cleaning liquid supply paths 33 and 34 are connected to cleaning liquid supply sources 35 and 36 in which the cleaning liquid is stored, respectively. As the cleaning liquid, for example, hydrofluoric acid, nitric acid, hydrochloric acid, phosphoric acid,
Chemical solutions such as acetic acid and ammonia, and pure water are used.

Further, cleaning liquid supply nozzles 37 and 38 for supplying a cleaning liquid to the wafer W are arranged near the center of the cleaning brushes 21 and 22 provided in the sub-cleaning device 3, respectively. The cleaning liquid supply nozzles 37 and 38 are connected to branch paths 39 and 40 that are formed by branching from the middle of the cleaning liquid supply paths 33 and 34, respectively, and a part of the cleaning liquid flowing through the cleaning liquid supply paths 33 and 34 is supplied. Supplied.

The cleaning liquid supply paths 33, 34 are provided with cleaning liquid supply valves 41, 42 upstream of the branch paths 39, 40, respectively. By controlling the opening and closing of the cleaning liquid supply valves 41, 42, Cleaning liquid supply nozzles 31, 32, 3
It is possible to discharge the cleaning liquid from 7, 38 or stop the discharge. FIG. 3 is a plan view showing a configuration of the lower cleaning brush 12 provided in the main cleaning device 2. FIG. 4 is a sectional view taken along section line IV-IV in FIG.

The cleaning brush 12 is made of, for example, PVA (Poly
-Vinyl Alcohol) and other sponge materials.
It is integrally molded in a plane cross shape. More specifically, the cleaning brushes 12 are formed to have a length substantially equal to the radius of the disk-shaped brush base 15 and are arranged along the radial direction of the brush base 15 at angular intervals of approximately 90 degrees. And four contact portions 43, 44, 45, and 46. The four contact portions 43, 44, 45, 46 are connected to each other at the center of the brush base 15, and a substantially circular concave portion 47 is formed at the connection portion in plan view. The cleaning liquid supply nozzle 32 for supplying the cleaning liquid to the wafer W faces the external space from the recess 47.

As shown in FIG. 4, the contact portions 43, 44, 45, 46 include a main body 48 having a rectangular cross section and two ridges 49, 50 juxtaposed on the upper surface of the main body 48. Have. The ridges 49 and 50 are formed in a triangular cross section, and a valley 51 having a V-shaped cross section is formed between the two ridges 49 and 50. With this configuration, when the cleaning brush 12 is rotated, the cleaning liquid supply nozzle 3
When the cleaning liquid is discharged from 2, part of the cleaning liquid is guided to the outside of the cleaning brush 12 through the trough 51.

The cleaning brush 12 is provided with ridges 49, 5
The wafer W is brought into contact with the lower surface of the wafer W near the zero ridge line. Therefore, when a notch such as an orientation flat or a notch is formed in the peripheral portion of the wafer W, the cleaning brush 12
Is pressed at a predetermined pressure against the ridge 4
The vicinity of the 9,50 ridge lines enters the notch, and the end face of the notch can be cleaned.

From the lower edge along the longitudinal direction of the main body 48, a flange 52 integrally formed with the main body 48 projects horizontally. The cleaning brush 12 is mounted on the upper surface of the base 15 with the flange 52 sandwiched between the four mounting plates 53 and the base 15. Each of the four mounting plates 53 is a fan-shaped plate having a central angle of approximately 90 degrees, and has a step portion 54 on the lower surface into which the flange portion 52 is fitted. The mounting of the cleaning brush 12 to the base base 15 is performed by the four mounting plates 53 such that the flange 52 is fitted into the step 54 while the cleaning brush 12 is placed on the upper surface of the base base 15. It is covered from above the cleaning brush 12,
This is achieved by fixing these mounting plates 53 to the base 15 with a plurality of bolts 55.

At this time, the four end faces 5 of the cleaning brush 12
Reference numeral 6 is located at substantially the same position as the end surface of the base 15. Therefore, when the lower cleaning brush 12 is rotated by the rotation drive mechanism 18, the cleaning area of the lower cleaning brush 12 is a range surrounded by a circle drawn by the trajectory of the end face 56 of the cleaning brush 12. Note that the configuration of the upper cleaning brush 11 provided in the main cleaning device 2 is the same as the configuration in which the lower cleaning brush 12 is turned upside down, and a detailed description thereof will be omitted. The upper cleaning brush 2 provided in the sub-cleaning device 3
1 and the lower cleaning brush 22 are the same as those obtained by reducing the diameters of the upper cleaning brush 11 and the lower cleaning brush 12 provided in the main cleaning device 2, respectively, and therefore, detailed description thereof will be omitted.

FIG. 5 is an illustrative view for explaining a state of a scrub cleaning process by the wafer cleaning apparatus according to the first embodiment. FIG. 5 shows a notch 6 at the periphery.
The wafer W on which 0 is formed is shown. First, when a wafer W is carried into the wafer cleaning device by a transfer arm (not shown), the wafer W is held by the wafer holding device 1 (see FIG. 1). At this time, the main cleaning device 2
Cleaning brushes 11 and 12 and sub-cleaning device 3
The cleaning brushes 21 and 22 provided on the side are waiting at an upper or lower position avoiding the wafer W.

Next, the motor M (see FIG. 1) is driven to rotate the holding roller 7 provided in the wafer holding device 1, whereby the wafer W held by the wafer holding device 1 is moved. 5 is rotated counterclockwise. Further, the cleaning liquid supply valves 41 and 42 are opened, and the cleaning liquid is supplied to the wafer W from the cleaning liquid supply nozzles 31, 32, 37 and 38. Further, the rotation drive mechanisms 17 and 18 are driven, and the cleaning brushes 11 and 12 of the main cleaning device 2 rotate the wafer W clockwise in FIG. 5 around the rotation axis O1.
5, and the rotation driving mechanisms 27 and 28 are driven to rotate the cleaning brushes 21 and 22 of the sub-cleaning device 3 counterclockwise in FIG. 5 around the rotation axis O2. Driven.

Thereafter, the elevation drive mechanisms 19 and 20 are driven, and the cleaning brushes 11 and 12 of the main cleaning device 2 are brought into contact with the upper and lower surfaces of the wafer W held by the wafer holding device 1, respectively. As a result, the entire upper and lower surfaces of the wafer W are scrub-cleaned by the cleaning brushes 11 and 12. Further, the lifting drive mechanisms 29 and 30 are driven,
When the cleaning brushes 21 and 22 of the sub-cleaning device 3 come into contact with the upper and lower surfaces of the wafer W, the vicinity of the peripheral portion of the wafer W is scrub-cleaned.

As shown in FIG. 5A, the rotation center O1 of the cleaning brushes 11 and 12 of the main cleaning device 2 is located inside a region surrounded by a circle drawn by the trajectory of the end surface of the wafer W. In this case, the cleaning brushes 11, 12 and the wafer W are both rotated counterclockwise, and the cleaning brushes 11, 12
Is rotated at a higher speed than the wafer W, the cleaning brush 1
The contact surfaces 1 and 12 apparently move counterclockwise with respect to the vicinity of the periphery of the wafer W. Therefore, the wafer W
The notch 60 formed on the peripheral portion of the cleaning brush 11, 1
When the cleaning brush 11 and the cleaning brush 11 reach the position 2, the cleaning brushes 11 and 12 enter the notch 60 and come into contact with the one end surface 61 of the notch 60, and actively remove the foreign matter attached to the one end surface 61.

Further, as shown in FIG. 5B, the rotation center O2 of the cleaning brushes 21 and 22 of the sub-cleaning device 3 is located inside the area surrounded by the circle drawn by the trajectory of the end face of the wafer W. When the wafer W is rotated counterclockwise and the cleaning brushes 21 and 22 of the sub-cleaning device 3 are rotated clockwise, the cleaning brush 21 for the vicinity of the peripheral edge of the wafer W is rotated.
The apparent movement direction of 22 is clockwise. therefore,
When the wafer W is further rotated counterclockwise from the state shown in FIG. 5A and the notch 60 reaches the position of the cleaning brushes 21 and 22 of the sub-cleaning device 3, the cleaning brushes 21 and 22 are provided.
Mainly contacts the other end face 62 of the notch 60 and positively removes foreign matter from the other end face 62.

Therefore, when the scrub cleaning process is completed, no foreign matter remains on the one end surface 61 and the other end surface 62 of the notch 60. Thus, the main cleaning device 2
When the cleaning of the wafer W by the sub-cleaning device 3 is performed for a predetermined time, the cleaning brushes 11 and 12 of the main cleaning device 2 and the cleaning brushes 21 and 22 of the sub-cleaning device 3 are separated from the wafer W, and the cleaning liquid supply valve is provided. The nozzles 41 and 42 are closed, and the discharge of the cleaning liquid from the cleaning liquid supply nozzles 31, 32, 37 and 38 is stopped. Further, the drive of the motor M and the rotation drive mechanisms 17, 18, 27, 28 is stopped, the rotation of the wafer W and the cleaning brushes 11, 12, and the cleaning brushes 21, 22 is stopped, and the scrub cleaning process is completed. .

As described above, according to the first embodiment,
The cleaning brushes 11 and 12 (corresponding to the first scrub member) of the main cleaning device 2 and the cleaning brushes 21 and 22 (corresponding to the second scrub member) of the sub-cleaning device 3 are attached to the wafer W held by the wafer holding device 1. Contact different positions on the surface of
The surface and the end face of the wafer W are scrub-cleaned. The rotation center O1 of the cleaning brushes 11 and 12
In addition, the rotation centers O2 of the cleaning brushes 21 and 22 are both located inside the area surrounded by the circle drawn by the trajectory of the end face of the wafer W, and the cleaning brushes 11 and 12 and the cleaning brush 2
1 and 22 are rotationally driven in directions opposite to each other. As a result, the cleaning brushes 11, 1 around the periphery of the wafer W are removed.
2 and the apparent movement directions of the cleaning brushes 21 and 22 with respect to the vicinity of the peripheral edge of the wafer W are opposite to each other, so that the notch 60 is formed at the peripheral edge of the wafer W to be cleaned. However, even the end face of the notch 60 can be cleaned well. Further, according to the above-described first embodiment, even when a notch other than the notch 60 such as an orientation flat is formed in the peripheral edge of the wafer W to be cleaned, it is preferable that the notch portion has an end surface. Can be washed.

As shown in FIG. 6A, when the orientation flat 70 is formed on the peripheral edge of the wafer W, when the orientation flat 70 reaches the position of the cleaning brushes 11 and 12 of the main cleaning device 2, the cleaning brush is In a first area 73 on the right side of an intersection 72 between a perpendicular line drawn down from the rotation center of each of the rotation ends 11 and 12 to the orientation flat end face 71 and the orientation flat end face 71, the cleaning brushes 11 and 12 are disposed.
12 moves from the outside of the wafer W toward the inside, and at the intersection 7
In the second region 74 on the left side of the cleaning brush 11, the cleaning brush 11, 1
The contact surface 2 moves from the inside to the outside of the wafer W. Therefore, the foreign matter adhering to the first area 73 on the orientation flat end face 71 is positively removed by the cleaning brushes 11 and 12. At this time, the attached foreign matter is satisfactorily removed as approaching the vicinity of the end of the first region 73.

Thereafter, when the wafer W is further rotated counterclockwise and the orientation flat 70 reaches the position of the cleaning brushes 21 and 22 of the sub-cleaning device 3, as shown in FIG. In the second area 74 on the right side of the intersection 75 between the perpendicular line drawn from the rotation center of the rotation end 22 to the orientation flat end face 71 and the orientation flat end face 71, the cleaning brushes 21 and
Since the contact surface 2 moves from the outside to the inside of the wafer W, the foreign matter attached to the second region 74 on the orientation flat end surface 71 is positively removed by the cleaning brushes 21 and 22. At this time, the attached foreign matter is satisfactorily removed as approaching the vicinity of the end of the second region 74. Therefore, when the scrub cleaning process is completed, the end face 71 of the orientation flat is completely cleaned, and no foreign matter remains on the end face 71 of the orientation flat.

FIG. 7 is an illustrative view for explaining a state of scrub cleaning processing by the wafer cleaning apparatus according to the second embodiment. In the apparatus according to the first embodiment, the rotation center O1 of the cleaning brushes 11 and 12 provided in the main cleaning device 2 and the rotation center O2 of the cleaning brushes 21 and 22 provided in the sub-cleaning device 3 are both wafers. In contrast to the configuration in which the trajectory of the end face of W is located inside the area surrounded by the drawn circle, in the apparatus of the second embodiment, the cleaning brush 1
The rotation centers O1 of the cleaning brushes 21 and 22 are located outside the region, and the rotation centers O1 of the cleaning brushes 21 and 22 are located outside the region.

In the above-described apparatus of the first embodiment, the rotation directions of the cleaning brushes 11 and 12 of the wafer W and the main cleaning device 2 and the rotation directions of the cleaning brushes 21 and 22 of the sub-cleaning device 3 are opposite to each other. In the apparatus of the second embodiment, the cleaning brushes 11 and 12 of the main cleaning apparatus 2 are used.
The cleaning brushes 21 and 22 of the sub-cleaning device 3 and the wafer W are all rotated counterclockwise, and the cleaning brush 1
1 and 12 are rotated at a higher speed than the wafer W.

As a result, the apparent movement direction of the cleaning brushes 11 and 12 (corresponding to the first scrub member) of the main cleaning device 2 with respect to the vicinity of the peripheral portion of the wafer W becomes counterclockwise in FIG. The apparent movement direction of the cleaning brushes 21 and 22 (corresponding to the second scrub member) of the sub-cleaning device 3 with respect to the vicinity of the peripheral edge is clockwise in FIG. Therefore, according to the apparatus of the second embodiment, similarly to the apparatus of the above-described first embodiment, even if a notch or a notch such as an orientation flat is formed in the peripheral portion of the wafer W to be cleaned, Can be satisfactorily cleaned up to the end face.

FIG. 8 is a simplified side view showing the configuration of a wafer cleaning apparatus according to the third embodiment. FIG.
In FIG. 2, the same parts as those shown in FIG. 2 are denoted by the same reference numerals. The apparatus of the above-described first and second embodiments includes a main cleaning device 2 and a sub-cleaning device 3 that come into contact with different positions on the surface of the wafer W held by the wafer holding device 1. The apparatus according to the third embodiment includes only the main cleaning apparatus 2 that can scrub clean a region from the center to the peripheral edge of the wafer W.

More specifically, the apparatus of the third embodiment is provided with a main cleaning device 2 including an upper cleaning brush 11 and a lower cleaning brush 12. Upper cleaning brush 11
The lower cleaning brush 12 is formed in a disk shape so as to scrub the region from the center to the peripheral edge of the wafer W, and is attached to the disk-shaped brush bases 13 and 15, respectively, and extends along the vertical direction. Rotating shafts 14 and 1
6 is fixed to the end.

The rotation shafts 14 and 16 rotate about a rotation axis O1 passing through a region surrounded by a circle drawn by the trajectory of the end face of the wafer W held by the wafer holding device 1. A rotation drive mechanism 17 is coupled to the rotation shaft 14 to which the upper cleaning brush 11 is fixed. When a driving force is applied to the rotation shaft 14 from the rotation drive mechanism 17, the upper cleaning brush 11 moves the rotation axis O1. Rotated counterclockwise as center. A rotation drive mechanism 18 is also coupled to the rotation shaft 16 to which the lower cleaning brush 12 is fixed, and when a driving force is applied to the rotation shaft 16 from the rotation drive mechanism 18, the lower cleaning brush 1
2 is rotated clockwise about the rotation axis O1.

In the vicinity of the center of the cleaning brushes 11 and 12, cleaning liquid supply nozzles 31 and 32 for supplying a cleaning liquid to the wafer W are arranged, respectively. The cleaning liquid supply nozzles 31 and 32 are connected to the other ends of the cleaning liquid supply paths 33 and 34, one ends of which are connected to the cleaning liquid supply sources 35 and 36, respectively. When cleaning the wafer W, the cleaning liquid supply path 3
Cleaning liquid supply valves 41 and 42 interposed in
Is opened, and the upper cleaning brush 11 and the lower cleaning brush 12 are supplied while the cleaning liquid is supplied to the upper and lower surfaces of the wafer W.
As a result, the surface of the wafer W is scrub-cleaned.

As described above, according to the third embodiment, the first
Since the upper cleaning brush 11 as a scrub member and the lower cleaning brush 12 as a second scrub member respectively contact different surfaces of the wafer W and are rotationally driven in opposite directions to each other, the upper cleaning brush 11 with respect to the vicinity of the periphery of the wafer W Cleaning brush 1
The apparent movement direction of 1 and the apparent movement direction of the lower cleaning brush 12 with respect to the vicinity of the periphery of the wafer W are opposite to each other. Therefore, similarly to the apparatus of the above-described first and second embodiments, even if a notch or a notch such as an orientation flat is formed in the peripheral portion of the wafer W to be cleaned, cleaning is performed well to the end face of the notch. be able to.

Further, in the configuration of the third embodiment, since the sub-cleaning device 3 provided in the devices of the first and second embodiments is omitted, the configuration is simpler than that of the first and second embodiments. Can be FIG. 9 is a simplified side view showing the configuration of a wafer cleaning apparatus according to the fourth embodiment. FIG. 10 is an illustrative view for explaining a state of a scrub cleaning process by the wafer cleaning apparatus of the fourth embodiment. In FIG. 9, parts that are the same as the parts shown in FIG. 8 are given the same reference numerals.

The difference between the above-described apparatus of the third embodiment and the apparatus of the fourth embodiment is that, in the apparatus of the third embodiment, the position of the main cleaning device 2 is fixed in the horizontal direction. In the apparatus of the fourth embodiment, the main cleaning apparatus 2 is configured to be displaceable in the horizontal direction. Referring to FIG. 9, the rotating shaft 14 of the upper cleaning brush 11 has a rotation driving mechanism 17 and a lifting / lowering driving mechanism 19, as well as the upper cleaning brush 11.
Is connected to a parallel moving mechanism 80 for sliding the. The rotating shaft 16 of the upper cleaning brush 11
Also, in addition to the rotary drive mechanism 18 and the lift drive mechanism 20, a parallel movement mechanism 81 for sliding the lower cleaning brush 12 in the horizontal direction is connected.

Referring to FIGS. 9 and 10, the flow of processing when scrubbing the wafer W will be described.
The wafer W to be cleaned is held by a wafer holding device 1 not shown in FIGS. At this time, the cleaning brushes 11 and 12 provided in the main cleaning device 2 stand by at positions P1 and P2 that avoid the wafer W (positions indicated by two-dot chain lines in FIG. 9).

Next, the motor M (see FIG. 1) is driven, and the wafer W held by the wafer holding device 1 is moved to the position shown in FIG.
Rotated counterclockwise at. Further, the cleaning liquid supply valves 41 and 42 are opened, and the cleaning liquid is supplied to the wafer W from the cleaning liquid supply nozzles 31 and 32 arranged on the cleaning brushes 11 and 12, respectively. Further, the rotation drive mechanism 17,
18 is driven, and the cleaning brushes 11 and 12 are driven to rotate counterclockwise in FIG. 10 around the rotation axis O1 at a speed higher than the rotation speed of the wafer W.

Thereafter, the elevation drive mechanisms 19 and 20 are driven, and the upper cleaning brush 11 and the lower cleaning brush 12 are moved to the first scrub position (corresponding to the first position) shown by a solid line in FIG.
Displaced into Q1 and Q2, respectively. As a result, the upper cleaning brush 11 and the lower cleaning brush 12
The upper surface and the lower surface of the wafer W are respectively contacted with the upper surface and the lower surface of the wafer W held by the wafer W to perform scrub cleaning. This state is shown in FIG.

When the cleaning brushes 11, 12 are displaced to the first scrub positions Q1, Q2, the cleaning brushes 11, 1 are displaced.
The second rotation center O1 is located inside a region surrounded by a circle drawn by the trajectory of the end face of the wafer W. The cleaning brushes 11, 12 and the wafer W are both rotated counterclockwise, and the cleaning brushes 11, 12 are rotated at a higher speed than the wafer W. Therefore, at this time, the contact surfaces of the cleaning brushes 11 and 12 apparently move counterclockwise with respect to the vicinity of the periphery of the wafer W.

When a predetermined time has passed since the cleaning brushes 11 and 12 were displaced to the first scrub positions Q1 and Q2, the parallel moving mechanisms 80 and 81 were driven, and the cleaning brushes 11 and 12 moved to the upper surface of the wafer W. The wafer W is moved outward while scrubbing the lower surface. That is, the cleaning brushes 11 and 12 are moved to the first scrub position Q1,
From Q2, it is displaced to the second scrub positions (corresponding to the second position) R1 and R2 shown by the two-dot chain line in FIG. The cleaning brushes 11 and 12 are moved to the second scrub positions R1 and R2.
At the position 2, the vicinity of the periphery of the wafer W is mainly scrub-cleaned. This state is shown in FIG.

In a state where the cleaning brushes 11 and 12 are displaced to the second scrub positions R1 and R2, the cleaning brushes 11 and 1 are displaced.
The second rotation center O1 is located outside the region surrounded by the circle drawn by the trajectory of the end face of the wafer W. The cleaning brushes 11 and 12 and the wafer W are all rotated counterclockwise. Therefore, at this time, the apparent movement direction of the cleaning brushes 11 and 12 with respect to the vicinity of the peripheral edge of the wafer W is clockwise, which is the opposite direction to the movement direction in the state shown in FIG.

When a predetermined time has passed since the cleaning brushes 11 and 12 were displaced to the second scrub positions R1 and R2, the parallel moving mechanisms 80 and 81 were driven,
The cleaning brushes 11, 12 are moved from positions R1, R2 to positions Q1, Q2, respectively. Then, cleaning brush 1
When a predetermined time has passed since the first and second scrub positions Q1 and Q2 were respectively displaced to the first scrub positions Q1 and Q2,
81 is re-driven, the cleaning brushes 11 and 12 are moved to the second scrub positions R1 and R2, and the above operation is repeated. That is, the cleaning brushes 11, 12 are reciprocated between the first scrub positions Q1, Q2 and the second scrub positions R1, R2 while scrubbing the upper and lower surfaces of the wafer W by the parallel moving mechanisms 80, 81. I do. After this reciprocating operation is repeated a predetermined number of times, finally,
Cleaning brush 1 located at second scrub position R1, R2
The elevation drive mechanisms 19 and 20 are driven to move to the positions S1 and S2 shown by two-dot chain lines in FIG. 9 respectively, and the parallel movement mechanisms 80 and 81 are further driven by driving the elevation drive mechanisms 19 and 20. The cleaning brushes 11 and 12 are moved from the positions S1 and S2 to the positions P1 and P2, respectively, and a series of cleaning processing ends.

As described above, according to the fourth embodiment, at the time of scrub cleaning, the cleaning brushes 11 and 12 are positioned inside the region surrounded by the circle drawn by the locus of the end face of the wafer W with the rotation center O1. The first scrub positions Q1 and Q2 are displaced to the second scrub positions R1 and R2 where the rotation center O1 is located outside a region surrounded by a circle drawn by the trajectory of the end surface of the wafer W. The cleaning brushes 11 and 12 are rotated at a higher speed than the wafer W in the same direction as the wafer W. Thereby, the cleaning brushes 11 and 12 are moved to the first scrub position Q.
1, Q2 and the cleaning brushes 11, 1
2 is displaced to the second scrub positions R1 and R2, the cleaning brush 1
The moving directions of 1 and 12 are opposite to each other. Therefore, similarly to the apparatus of the above-described first to third embodiments, even if a notch or a notch such as an orientation flat is formed in the peripheral portion of the wafer W to be cleaned, the end face of the notch is favorably cleaned. be able to.

In the fourth embodiment, when the cleaning brushes 11, 12 are displaced between the first scrub positions Q1, Q2 and the second scrub positions R1, R2, the cleaning brushes 11, 12 are moved. While the upper surface and the lower surface of the wafer W are moved while being scrubbed while being in contact with the upper surface and the lower surface of the wafer W, for example, the cleaning brushes 11 and 1 are moved.
2 may be moved away from the upper and lower surfaces of wafer W.

Although the four embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example, in the first embodiment described above, the rotation centers O1 of the cleaning brushes 11 and 12 provided in the main cleaning device 2 and the cleaning brushes 21 and 22 provided in the sub cleaning device 3 are provided.
The two rotation centers O2 are located inside a region surrounded by a circle drawn by the trajectory of the end face of the wafer W. However, when the radius of the circle drawn by the trajectory of the end surface of the cleaning brush of the main cleaning device 2 is larger than the radius of the circle drawn by the trajectory of the end surface of the wafer W, the rotation centers O of the cleaning brushes 11 and 12 are changed.
1 and the rotation centers O2 of the cleaning brushes 21 and 22 are located outside the region surrounded by the circle drawn by the trajectory of the end face of the wafer W, and the cleaning brushes 11 and 12 and the cleaning brushes 21 and 22 are separated. They may be driven to rotate in opposite directions.

In the second embodiment, the radius of the circle drawn by the trajectory of the end faces of the cleaning brushes 11 and 12 of the main cleaning device 2 is larger than the radius of the circle drawn by the trajectory of the end face of the wafer W. Is the rotation center O1 of the cleaning brushes 11 and 12.
Is located outside the region surrounded by the circle drawn by the trajectory of the end face of the wafer W, and the rotation center O2 of the cleaning brushes 21 and 22 is
The cleaning brushes 11 and 12 and the cleaning brush 2 are located inside a region surrounded by a circle drawn by the trajectory of the end surface of the wafer W.
1 and 22 may be rotationally driven in the same direction.

Further, in the first and second embodiments, the moving directions of the cleaning brushes 11 and 12 with respect to the peripheral edge of the wafer W and the cleaning brush 2 with respect to the peripheral edge of the wafer W are different.
The configuration in the case where the moving directions of 1 and 22 are opposite to each other has been described. However, in order to clean the end face of the notch such as the notch or the orientation flat formed in the peripheral portion of the wafer W, the direction in which the cleaning brushes 11 and 12 scrub the end face of the notch and the cleaning brushes 21 and 22 are used to clean the notch. The direction in which the end face is scrubbed may be different, and does not necessarily have to be the opposite direction.

Therefore, for example, the cleaning brush 11,
In a configuration in which the rotation center O1 of the cleaning brush 12 and the rotation center O2 of the cleaning brushes 21 and 22 are both provided inside or outside a region surrounded by a circle drawn by the trajectory of the end face of the wafer W, the cleaning brushes 11 and 12 are provided. And cleaning brushes 21 and 22
Are rotated in the same direction, the position of the rotation center O1 with respect to the rotation radius direction of the wafer W and the rotation center O2
Is provided so as to be different from each other, the end face of the cutout portion may be scrubbed from two different directions.

Similarly, the rotation center O1 of the cleaning brushes 11 and 12 and the rotation center O2 of the cleaning brushes 21 and 22 are formed.
Are arranged inside a region surrounded by a circle drawn by the trajectory of the end face of the wafer W, and the other is arranged outside the region, and the cleaning brushes 11 and 12 and the cleaning brushes 21 and 22 Can be scrubbed from two different directions, even if they are rotated in opposite directions.

Further, in the above-described first, second and fourth embodiments, the wafer cleaning apparatus capable of cleaning both the upper surface and the lower surface of the wafer W has been described as an example. The configuration of the fourth embodiment can also be applied to, for example, a wafer cleaning apparatus that cleans one of the upper surface and the lower surface of a wafer W. Specifically, in the case of the first embodiment, either the cleaning brushes 11 and 21 provided on the upper side of the wafer W or the cleaning brushes 12 and 22 provided on the lower side may be omitted. Also,
In the case of the second embodiment, one of the cleaning brushes 11 and 12 may be omitted. Further, in the case of the fourth embodiment, one of the cleaning brushes 11 and 12 may be omitted.

In the first and second embodiments described above, the cleaning brushes 21 and 22 of the sub-cleaning device 3 are provided above and below the wafer W, but one of the cleaning brushes 21 and 22 is provided. It may be omitted. Further, in each of the above-described embodiments, the cleaning brushes 11, 12, 21, 22 in which the contact portion with the wafer W has a cross shape are described as an example. However, for example, the contact portion with the wafer W has a substantially flat surface. May be used. However, if convexes such as the ridges 49 and 50 are provided on the contact surface with the wafer W as in the above-described cleaning brushes 11, 12, 21 and 22, the orientation flat or the peripheral edge of the wafer W is provided. When a notch such as a notch is formed, the ridge 4
This is preferable because the vicinity of the ridge line portion of 9, 50 can easily enter the notch portion, and the end face of the notch portion can be more appropriately cleaned.

Further, in each of the above-described embodiments, the cleaning brushes 11 and 12 (the cleaning brushes 21 and 22) are moved so that the cleaning brushes 11 and 12 (the cleaning brushes 21 and 22) are moved.
22) is in contact with the upper and lower surfaces of the wafer W.
However, for example, by moving both the cleaning brushes 11 and 12 (the cleaning brushes 21 and 22) and the wafer holding device 1 that holds the wafer W, the cleaning brushes 11 and 12 are moved.
12 (the cleaning brushes 21 and 22) may be brought into contact with the upper and lower surfaces of the wafer W. When the present invention is applied to the single-sided cleaning apparatus and the cleaning brush is provided only above or below the wafer W, the holding hands 4 and 5 for holding the wafer W are moved while the cleaning brush is fixed. Thus, the cleaning brush may be brought into contact with the surface of the wafer W.

Further, the nozzles 31 and 32 for supplying the cleaning liquid to the wafer W may not be provided at the center of the cleaning brushes 11 and 12, but may be provided at a position away from the cleaning brushes 11 and 12. . Of course, the nozzles 37 and 38 disposed on the cleaning brushes 21 and 22 may be provided at positions away from the cleaning brushes 21 and 22. further,
In each of the above-described embodiments, as a configuration for holding and rotating the wafer W, the case where the holding rollers 6 and 7 that can rotate while holding the wafer W on the end surface is described. In an apparatus for cleaning only one surface, for example, a vacuum chuck that can rotate while holding the wafer W by vacuum-suctioning the upper or lower surface of the wafer W may be used.

Further, the case where the present invention is applied to an apparatus for cleaning a wafer W has been described as an example, but the present invention is applied to, for example, a wafer processing apparatus for performing processing other than cleaning on the surface of the wafer W. The same can be applied.
Further, the present invention can be applied not only to a circular substrate such as the wafer W, but also to an apparatus for processing a rectangular substrate such as a glass substrate for a liquid crystal display device or a glass substrate for a PDP. In this case, when the above-described cleaning brushes 11 and 12 are used as the cleaning member for cleaning the surface of the rectangular substrate, the cleaning brush 1
It is preferable to set the diameters of 1, 12 to be equal to or larger than the maximum radius (rotation radius) of the circle drawn by the trajectory when the rectangular substrate rotates. In this way, the entire upper surface and the entire lower surface of the rectangular substrate can be cleaned without relatively moving the cleaning brushes 11 and 12 and the rectangular substrate. In the rectangular substrate, it can be said that each side of the rectangular substrate corresponds to an edge of a notch such as an orientation flat or a notch formed on the circular substrate.

In addition, various design changes can be made within the scope described in the claims.

[Brief description of the drawings]

FIG. 1 is a plan view showing a schematic configuration of a wafer cleaning apparatus according to a first embodiment of the present invention.

FIG. 2 is a side view of the wafer cleaning apparatus shown in FIG. 1 as viewed from a direction A in FIG.

FIG. 3 is a plan view showing a configuration of a lower cleaning brush provided in the main cleaning device.

FIG. 4 is a sectional view taken along section line IV-IV in FIG. 3;

FIG. 5 is an illustrative view for explaining a state of cleaning of a wafer end face when a notch is formed in a peripheral portion of the wafer;

FIG. 6 is an illustrative view for explaining a state of cleaning of a wafer end surface when an orientation flat is formed on a peripheral portion of the wafer;

FIG. 7 is an illustrative view for explaining a state of a scrub cleaning process by the wafer cleaning device according to the second embodiment;

FIG. 8 is a simplified side view showing a configuration of a wafer cleaning apparatus according to a third embodiment.

FIG. 9 is a simplified side view showing a configuration of a wafer cleaning apparatus according to a fourth embodiment.

FIG. 10 is an illustrative view showing a flow of a scrub cleaning process by the wafer cleaning apparatus according to the fourth embodiment;

FIG. 11 is a plan view showing a configuration of a conventional wafer cleaning apparatus.

FIG. 12 is a side view of the configuration shown in FIG. 11 as viewed from the Z direction in FIG. 11;

FIG. 13 is an illustrative view for explaining uneven cleaning of a wafer end surface when a notch is formed in a peripheral portion of the wafer;

FIG. 14 is an illustrative view for explaining uneven cleaning of an end face of a wafer when an orientation flat is formed on a peripheral portion of the wafer;

[Explanation of symbols]

REFERENCE SIGNS LIST 1 substrate holding device (substrate holding device) 2 main cleaning device 3 sub-cleaning device 6 holding roller (substrate holding device) 7 holding roller (substrate holding device, driving roller) 11, 12, 21, 22 cleaning brush 17, 18, 27 , 28 Rotation drive mechanism (scrub member rotation drive means) 31, 32, 37, 38 Cleaning liquid supply nozzle (cleaning liquid supply means) 33, 34 Cleaning liquid supply path (cleaning liquid supply means) 41, 42 Cleaning liquid supply valve (cleaning liquid supply means) 49 , 50 Ridge (projection) 80.81 Parallel movement mechanism (moving means) O1, O2 Rotation axis M Motor (substrate rotation drive source) W Wafer (substrate)

Claims (10)

[Claims] 1. A substrate holding means for holding a substrate having a notch in a peripheral portion, a substrate rotation drive source for rotating the substrate held by the substrate holding means, and a substrate held by the substrate holding means A first scrubbing member and a second scrubbing member rotatably provided about different rotation axes along a direction substantially perpendicular to the surface of the substrate, for scrubbing the surface of the substrate; A substrate processing apparatus comprising: a scrub member rotation drive unit for rotating a second scrub member; and a cleaning liquid supply unit for supplying a cleaning liquid to a substrate held by the substrate holding unit. 2. The rotation axis of the first scrubbing member and the rotation axis of the second scrubbing member are both provided inside or outside a circle having a radius of rotation of the substrate. 2. The substrate processing apparatus according to claim 1, further comprising means for rotating the first scrub member and the second scrub member in contact with the same surface of the substrate held by the substrate holding means in directions opposite to each other. 3. The rotation axis of the first scrub member is provided inside the circle of the radius of rotation of the substrate, and the rotation axis of the second scrub member is provided outside the circle of the radius of rotation of the substrate. Wherein the scrub member rotation drive means includes means for rotating the first scrub member and the second scrub member in contact with the same surface of the substrate held by the substrate holding means in the same direction. Item 2. The substrate processing apparatus according to Item 1. 4. The rotation axis of the first scrub member is provided inside the circle of the radius of rotation of the substrate, and the rotation axis of the second scrub member is provided outside the circle of the radius of rotation of the substrate. Wherein the scrub member rotation drive means includes means for rotating the first scrub member and the second scrub member in contact with different surfaces of the substrate held by the substrate holding means, respectively, in the same direction. The substrate processing apparatus according to claim 1. 5. A substrate holding means for holding a substrate having a notch in a peripheral portion, a substrate rotation drive source for rotating the substrate held by the substrate holding means, and a substrate held by the substrate holding means. A first scrubbing member and a second scrubbing member rotatably provided about a rotation axis along a direction substantially perpendicular to the surface of the substrate, and contacting different surfaces of the substrate to scrub the respective surfaces; A scrub member rotation drive unit for rotating the first scrub member and the second scrub member in opposite directions; and a cleaning liquid supply unit for supplying a cleaning liquid to the substrate held by the substrate holding unit. A substrate processing apparatus characterized by the above-mentioned. 6. The substrate processing apparatus according to claim 1, wherein the first scrub member has a rotation diameter greater than a rotation radius of the substrate. 7. A substrate processing apparatus according to claim 1, wherein said first scrubbing member and said second scrubbing member have a convex portion on a side in contact with the substrate. . 8. A substrate holding means for holding a substrate having a notch in a peripheral portion, a substrate rotation drive source for rotating the substrate held by the substrate holding means, and a substrate held by the substrate holding means. Cleaning liquid supply means for supplying a cleaning liquid to the substrate; and a rotatable rotation center line extending along a direction substantially perpendicular to the surface of the substrate held by the substrate holding means for scrub cleaning the surface of the substrate. A scrub member, a scrub member rotation driving means for rotating the scrub member, a first position in which the rotation axis is located inside a circle of a rotation radius of the substrate, and the rotation axis is a rotation radius of the substrate. A substrate processing apparatus comprising: moving means for relatively moving a substrate and a scrub member so as to be displaced to a second position located outside a circle. 9. The substrate processing apparatus according to claim 8, wherein the scrub member has a convex portion on a side that contacts the substrate. 10. The substrate holding means has at least three holding rollers including a driving roller that rotates while being in contact with an end surface of the substrate and is driven to rotate by transmitting a driving force of a substrate rotation drive source. The substrate processing apparatus according to any one of claims 1 to 9, wherein: