JP2002079190A - Substrate cleaning member, and device and method for cleaning substrate using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate cleaning member, a device and a method for cleaning the substrate by which a substrate can be scrubbed excellently. SOLUTION: A wafer W to be held and rotated by end face supporting hands 100, 101 is scrubbed by sponge brushes 105, 109 of scrubbing units 106, 110 to be rotated by a rotationally driving source which is not shown in Fig. The contact parts S1, S2 of the brushes 105, 109 are made forma polyethylene-made porous material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer, a liquid crystal display, and a glass substrate for a plasma display.
The present invention also relates to a substrate cleaning member for performing scrub cleaning by contacting various substrates such as optical, magnetic and magneto-optical disk substrates, and a substrate cleaning apparatus and a substrate cleaning method using the same.

[0002]

2. Description of the Related Art A semiconductor device manufacturing process includes a process of forming a fine pattern by repeatedly performing processes such as film formation and etching on the surface of a semiconductor wafer (hereinafter, simply referred to as "wafer"). . Since the surface of the wafer itself and the surface of the thin film formed on the wafer surface need to be kept clean for microfabrication, the wafer is cleaned as necessary. For example, after a thin film formed on the surface of a wafer is polished using a polishing agent (hereinafter, referred to as a CMP process), the polishing agent (slurry) remains on the wafer surface. There is a need.

A conventional substrate cleaning apparatus for cleaning a wafer as described above mainly comprises a spin chuck which rotates while holding the wafer, and a cleaning liquid which is supplied to the wafer which is held and rotated by the spin chuck. A cleaning liquid nozzle,
And a sponge brush (porous material brush) made of PVA (polyvinyl alcohol) for scrubbing the wafer.

Since the sponge brush is disposed so as to cover the rotation axis of the wafer and the peripheral edge of the wafer, when the wafer is rotated, the contact portion comes into contact with almost the entire surface of the wafer. Therefore, scrub cleaning can be performed on almost the entire surface of the wafer.

[0005]

However, in the conventional substrate cleaning apparatus described above, since the sponge brush is made of a sponge made of PVA, even though the sponge brush covers the peripheral edge of the wafer, There has been a problem that cleaning of the end face of the peripheral portion of the wafer becomes insufficient.

To explain this, first, in order to sufficiently clean the end surface of the peripheral portion of the wafer, the sponge brush is strongly pressed against the end surface of the peripheral portion of the wafer, and the pressure at which the sponge brush contacts the wafer (hereinafter referred to as the contact pressure). ) Needs to be increased. However, when the cleaning liquid is supplied to the wafer and P
When the VA sponge brush becomes wet, the hardness of the sponge brush is significantly reduced. For this reason, the contact pressure with respect to the wafer decreases, so that the cleaning of the end face of the peripheral portion of the wafer becomes insufficient. In addition,
In the central part of the wafer, even if the sponge brush is made of PVA, the contact pressure increases if the sponge brush is pressed more strongly against the wafer. Also,
The contact pressure on the end surface hardly increases, just because the sponge brush wraps around the end surface of the wafer.

Therefore, in such a conventional substrate cleaning apparatus, undesired substances such as dust and slurry remain on the end face, and these substances become particles and reduce the yield in the semiconductor device manufacturing process. It was a big problem.

Furthermore, in the conventional sponge brush made of PVA, as described above, the hardness differs between the wet state and the dry state, so that the brush is processed at the time of processing (dry state) and at the time of cleaning the wafer (wet state). Then, the external dimensions change. For this reason, the state where the brush contacts the wafer cannot be predicted,
It is very difficult to manufacture a sponge brush having an optimal shape for cleaning a wafer, and therefore, there is also a problem that it is impossible to perform substantially optimal cleaning of a wafer.

Accordingly, an object of the present invention is to solve the above-mentioned technical problems and to provide a substrate cleaning member capable of satisfactorily cleaning a substrate (particularly, an end face of a peripheral portion thereof), and a substrate cleaning apparatus and a substrate cleaning method using the same. To provide.

[0010]

According to a first aspect of the present invention, there is provided a substrate cleaning member for performing scrub cleaning by contacting a substrate, wherein the substrate cleaning member contacts the substrate. A contact portion to be formed is made of a porous material made of polyethylene or polypropylene.

According to this configuration, the porous material made of polyethylene or polypropylene comes into contact with the substrate, and the substrate can be scrubbed. Here, since the contact portion of the substrate cleaning member is made of a porous material made of polyethylene or polypropylene, the hardness of the substrate cleaning member is reduced even if the substrate cleaning member is wet by the cleaning liquid supplied to the substrate. It is hard to lower and its size does not change significantly. Therefore, it is easy to manufacture, and the substrate (particularly, the peripheral end face) can be cleaned well.

Polyethylene or polypropylene is a high-concentration chemical solution, for example, a chemical solution of ammonia: hydrogen peroxide solution: water = 1: 4: 20 (so-called SC).
1) or a chemical solution (hydrochloric acid of high concentration) having a weight ratio of hydrochloric acid: water = 1: 20 or more. For this reason, the chemical resistance of the substrate cleaning member can be improved.

Furthermore, compared to a conventional porous material made of PVA, a porous material made of polyethylene or polypropylene is less likely to allow foreign substances to enter into a large number of gas bubbles (holes) in the material generation process. For this reason, dust generation from the porous material itself as a contact portion can be suppressed, and the substrate can be more favorably cleaned.

The term "contact portion" as used herein refers to a part of the substrate cleaning member that is in contact with the substrate of the substrate cleaning member having a shape along the substrate surface when actually pressed against the substrate.
The substrate cleaning member may be in any shape in a state where it is not pressed against the substrate, and may be any of a flat surface, a curved surface, a convex portion, or the like.

According to a second aspect of the present invention, there is provided the substrate cleaning member according to the first aspect, wherein the substrate cleaning member includes a plurality of contact portions which are arranged apart from each other in an island shape.

According to this configuration, a portion (non-contact portion) that does not contact the substrate is formed between the plurality of contact portions. For this reason, a large amount of the cleaning liquid can flow through the non-contact portion, and foreign matters scraped off from the substrate by the contact portion can efficiently flow out of the substrate by the cleaning liquid flowing through the non-contact portion. Therefore, the substrate can be more favorably cleaned.

The invention according to claim 3 is the invention according to claim 1 or 2
The substrate cleaning member according to any one of claims 1 to 3, wherein the substrate cleaning member is manufactured by a molding method.

According to this configuration, the substrate cleaning member is manufactured not by the cutting method of the material but by the molding method. For this reason, chips and the like at the time of the cutting process do not enter the bubble portion of the porous material, and according to the molding method, a so-called skin layer is formed on the surface of the substrate cleaning member (the surface of the contact portion). Therefore, dust generation from the porous material itself as a contact portion can be further suppressed,
By cooperating with the fact that the contact portion is made of a porous material made of polyethylene or polypropylene, the substrate can be better cleaned.

According to a fourth aspect of the present invention, there is provided a substrate holding means for holding a substrate so that the substrate rotates about a predetermined rotation axis, and a cleaning liquid supply means for supplying a cleaning liquid to the substrate held by the substrate holding means. And a contact portion for contacting the substrate held by the substrate holding means, and rotated about a rotation axis substantially parallel to the rotation axis of the substrate. And a substrate cleaning member.

According to this configuration, there is provided an apparatus for cleaning a substrate using the substrate cleaning member according to any one of the first to third aspects. Therefore, it has the same effect as the above-mentioned effect of any one of the first to third aspects of the invention,
A well cleaned substrate can be provided.

According to a fifth aspect of the present invention, in the substrate cleaning apparatus of the fourth aspect, the contact portion of the substrate cleaning member is provided so as to contact at least a part of the peripheral portion of the substrate. Is a substrate cleaning apparatus.

According to this configuration, the peripheral portion of the substrate is cleaned by the contact portion whose hardness does not decrease even when it is wet by the cleaning liquid. Therefore, the contact pressure of the substrate cleaning member at the end surface of the substrate peripheral portion is kept high, so that the end surface of the substrate peripheral portion in particular can be favorably cleaned.

The invention according to claim 6 is the invention according to claim 4 or 5.
3. The substrate cleaning apparatus according to item 1, wherein the substrate is a hydrophobic wafer.

According to this configuration, the apparatus for cleaning a substrate can be made of a hydrophobic substrate, for example, a substrate having a low dielectric constant (Low-k) insulating film formed on its surface, or a strong acid such as hydrofluoric acid. Clean the surface-treated substrate and the like. In this case, since the substrate surface is hydrophobic, the cleaning liquid supplied to the substrate surface is repelled immediately after being supplied, and the substrate surface is exposed.
Here, since the exposed surface of the substrate has almost no moisture, foreign substances adhering to the substrate cleaning member itself are easily transferred. However, even on such an exposed substrate surface, the generation of dust from the substrate cleaning member itself is small as described above. Therefore, the substrate can be satisfactorily cleaned without transferring foreign matter to the substrate surface.

According to a seventh aspect of the present invention, a substrate cleaning member having a contact portion to be brought into contact with the substrate made of a porous material made of polyethylene or polypropylene is brought into contact with the substrate, and the substrate is cleaned while the cleaning liquid is supplied to the substrate. A substrate cleaning method characterized by performing scrub cleaning.

According to this method, similarly to the fifth aspect of the present invention, it is possible to provide a well-cleaned substrate.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate cleaning apparatus according to an embodiment of the present invention for solving the above technical problems will be described.
This will be described in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing a configuration of a main part of a substrate cleaning apparatus according to an embodiment of the present invention, and FIG. 2 is a side view showing a configuration of a main part of the substrate cleaning apparatus. FIG. 3 is a plan view showing a configuration of a scrub unit of the substrate cleaning apparatus. This substrate cleaning apparatus is an apparatus for scrub-cleaning both surfaces of a wafer after a CMP process, and the transfer of the substrate to the substrate cleaning apparatus is appropriately performed by a substrate transfer robot (not shown) or the like.

In this substrate cleaning apparatus, the support of the wafer W is achieved by the end faces of the wafer W being sandwiched between the roller pins 102 and 103 provided on the pair of end face support hands 100 and 101, respectively. I have. In addition, by rotating these six roller pins 102 and 103 in the direction of the arrow in FIG. 1 by a rotation drive mechanism (not shown), the wafer W can be rotated in the direction of the arrow in FIG. 1 around the wafer rotation axis OW. It has become. Here, the wafer rotation axis OW refers to an axis passing through the center of the wafer W and perpendicular to the wafer W.

The upper surface of the wafer W is covered with a disk-shaped base portion 104 and a sponge brush 10 fixed on the lower surface thereof.
The scrub cleaning is carried out by the scrub unit 106 composed of No. 5. Here, a bottom view of the scrub unit 106 is shown in FIG.
Four are provided on the lower surface of the substrate 04 in an island shape and a cross shape. Contact portions S1 of each of these four sponge brushes 105
Is in contact with the upper surface of the wafer W, the scrub unit 106 is rotated about the sponge brush rotation axis OS by a rotation driving mechanism (not shown), and the base portion 104 is rotated.
The cleaning liquid is discharged from the nozzle 107 disposed substantially at the center of the wafer W, and the upper surface of the wafer W is scrubbed. Here, as the cleaning liquid, pure water, hydrofluoric acid, hydrochloric acid (including those with hydrochloric acid: water = 1: 20 or more by weight), ammonium hydroxide, sodium hydroxide, citric acid, oxalic acid, T
MAH (Tetra Methyl Ammonium Hydroxide) or SC1 (ammonia: hydrogen peroxide: water = 1: 1 by weight)
4:20) and the like.

Similarly, on the lower surface of the wafer W, a scrub unit 110 composed of a disk-shaped base portion 108 and four island-shaped and cross-shaped sponge brushes 109 fixed on the upper surface thereof is provided with four sponge members. In a state where each contact portion S2 of the brush 109 is in contact with the lower surface of the wafer W, the brush 109 is rotated around a sponge brush rotation axis OS by a rotation driving mechanism (not shown), and the nozzle 111 is disposed substantially at the center of the base portion 108. The cleaning liquid is discharged, and the lower surface of the wafer W is scrub-cleaned. Note that a plan view of the lower surface side scrub unit 110 is shown in the same manner as the bottom view of the upper surface side scrub unit 106 shown in FIG.
The reference numerals of the parts of the scrub unit 110 are also shown in FIG. (Note that in FIGS. 4, 6, and 7 described later, the scrub units 106 and 110
The sign of the part is also described. Here, the sponge brush rotation axis OS and the wafer rotation axis OW are substantially parallel, and the wafer W and the contact portions S1 and S2 are in a parallel relationship with each other.

The two-dot chain lines S10 and S20 in FIG.
Indicates a scrub area which is a passage area of the contact portions S1 and S2 when the sponge brushes 105 and 109 rotate, and the scrub areas S10 and S20 include the wafer rotation axis OW and the peripheral edge of the wafer W. Thus, the size (radius) of the scrub areas S10 and S20 and the positional relationship between the sponge brush rotation axis OS and the wafer rotation axis OW are determined. Therefore, by rotating the scrub units 106 and 110 while rotating the wafer W, the contact portions S1 and S2 come into contact with almost the entire surface of the wafer W, so that the substantially entire surface of the wafer W can be scrubbed.

When the outer circumferential arc range of the wafer W in the scrub areas S10 and S20 is indicated by T, in this arc range T, the scrub areas S10 and S20
Is spread over the peripheral portion of the wafer W to the portion reaching the outside of the wafer W. For this reason, in this circular arc range T, the sponge brushes 105 and 109 rotate while the contact portions S1 and S2 are in contact with the peripheral edge of the wafer W, so that the end face of the peripheral edge of the wafer W is scrubbed. It will be.

Also, one sponge brush 105, 10
9 is a rectangular section as viewed in the direction of the arrow A in FIG. 3, and the contact portions S1 and S2 are planar. However, FIG. 4 shows the sponge brushes 105 and 109 in a state where the sponge brushes 105 and 109 are not pressed against the wafer W, and a predetermined amount of pressing (for example, 0.5 to 2.0 mm)
), Press the sponge brush 10
5, 109 has a height slightly reduced by a certain amount (predetermined pushing amount). That is, the contact portions S1 and S2 during the scrub cleaning are at the positions indicated by the broken lines in the drawing.

FIG. 5 shows a contact state between the sponge brushes 105 and 109 and the end surface R of the peripheral portion of the wafer W.
5 is an enlarged sectional view of the vicinity of the arc range T of FIG. 1 when viewed from the right side in FIG. As can be seen from FIG. 5, the sponge brush 10
When 5,109 is pressed by a predetermined amount of pressing, contact portions S1 and S2 are wrapped around end surface R of the peripheral portion of wafer W in a portion of arc range T in FIG. S2 is pressed against the end surface R by contact with a predetermined contact pressure.

Here, the four sponge brushes 105 and 109 including the contact portions S1 and S2 are all formed of a sponge (porous material) made of polyethylene. Therefore, compared to the case of the conventional PVA sponge brush,
Sponge brush 1 with cleaning liquid supplied to wafer W
Even if 05 and 109 are in a wet state, the hardness of the sponge brushes 105 and 109 does not easily decrease. For this reason,
The contact pressure on the end face R of the wafer W increases,
Unnecessary substances such as unnecessary dust and slurry adhered to the end surface of the peripheral portion of the wafer W are favorably removed. Also, the wafer W
There is an additional effect that unnecessary substances such as dusts and slurries firmly adhered to the central portion can be satisfactorily removed.

The sponge brushes 105, 10
9 is manufactured by a molding method, and a sponge brush 1 is used.
A skin layer is formed on the surfaces of 05 and 109. Incidentally, the molding method is a method in which a material (a polyethylene resin in the present embodiment) is poured into a mold and solidified. According to this molding method, dust generation from the contact portions S1 and S2 can be suppressed, and the cooperation of the contact portions S1 and S2 with a porous material made of polyethylene allows the wafer W to be more favorably formed. Can be washed.

Here, in this substrate cleaning apparatus, as shown in FIG.
In a state sandwiched between the wafers 1 and S2, scrub cleaning is performed on both surfaces of the wafer W. For this reason, since the contact portions S1 and S2 wrap around most of the end surface R of the wafer W, it is possible to satisfactorily clean almost all the end surface of the peripheral portion of the substrate.

In the portion of the circular arc range T in FIG.
Since the sponge brushes 105 and 109 rotate while the contact portions S1 and S2 are in contact with a part of the peripheral portion of the wafer W, the contact portions S1 and S2 move from the inside of the wafer W to the outside,
The wafer W moves from outside to inside. Therefore, unnecessary dust and slurry inside the wafer W can be swept out of the wafer W, and the end face R of the wafer W can be removed.
Unnecessary dust and slurry attached to the surface can be efficiently scraped off.

Further, since the sponge brushes 105 and 109 including the contact portions S1 and S2 are arranged apart from each other in an island shape, a concave portion (non-contact portion) is formed in a portion other than the contact portions S1 and S2. The cleaning liquid can flow through the recess. Therefore, unnecessary dust and slurry remaining on the surface of the wafer W can be discharged to the outside.

The island-shaped sponge brushes 105, 10
9 have base portions 104, 10 as shown in FIG.
A step portion D that rises substantially perpendicularly from 8 is formed. In this case, since the step portion D has a function of scraping the end face R of the wafer W, the end face R of the wafer W can be more favorably cleaned. Note that the step portion D does not need to stand vertically, and may be, for example, a slope or a curved surface.

Further, one embodiment of the present invention relates to a wafer W having a hydrophobic surface, such as a wafer having a low dielectric constant (Low-k) insulating film formed thereon, or a strong acid such as hydrofluoric acid. It is particularly suitable for cleaning wafers and the like surface-treated with. This is because, when the surface of the wafer W is hydrophobic, the cleaning liquid supplied to the surface of the wafer W is repelled immediately after being supplied and the surface of the wafer W is exposed. However, since the sponge brushes 105 and 109 generate less dust as described above,
This is because the wafer W can be favorably cleaned without transferring foreign matter to the surface of the wafer W.

According to the above embodiment of the present invention, the sponge brushes 105 and 109 made of polyethylene
And scrubs the substrate, so that the sponge brushes 105 and 10 are cleaned by the cleaning liquid supplied to the wafer W.
Even if 9 becomes wet, sponge brush 10
The hardness of 5,109 does not easily decrease, and its dimensions do not significantly change. Therefore, it is easy to manufacture,
The wafer W (especially the peripheral end face) can be cleaned well. Also, a polyethylene sponge brush 10
5,109 can withstand high-concentration chemicals such as SC1 and high-concentration hydrochloric acid, and can improve the chemical resistance of the substrate cleaning member. Furthermore, compared to a conventional porous material made of PVA, a porous material made of polyethylene is less likely to allow foreign matter to enter a large number of air bubbles (holes) in the material generation process.
Dust from 5,109 itself can be suppressed, and the wafer W can be further favorably cleaned.

While one embodiment of the present invention has been described above, the present invention can be embodied in other forms. For example, in the above-described embodiment, the sponge brushes 105 and 109 are made of a porous material made of polyethylene, but are not limited thereto. For example, the sponge brushes 105 and 109 are made of a porous material made of polypropylene. It may consist of.

The sponge brushes 105 and 109 are all made of the same material (a porous material made of polyethylene).
However, at least the contact portions S1 and S2 only need to be made of the above-mentioned material, and the other portions may be made of another arbitrary material (for example, PVA or vinyl chloride).

Also, each of the four sponge brushes 10
5 and 109 are all made of the same material (porous material made of polyethylene).
It is sufficient that at least one of the sponge brushes 105 and 109 among the sponge brushes 105 and 109 is the above-described porous material, and the other sponge brushes 105 and 109 may be other arbitrary materials. That is, only one of the four sponge brushes 105 and 109 may be made of a porous material made of polyethylene, and the other three may be made of a sponge made of PVA. By doing so, a hard sponge brush (made of polyethylene) is suitable mainly for cleaning the end face R of the peripheral portion of the wafer W, while a soft sponge brush (made of PVA) is less likely to damage the surface of the wafer W. It is suitable mainly for cleaning the central portion of the wafer W. Therefore, in such a configuration, the wafer W
In addition to the peripheral portion, the central portion of the wafer W can be cleaned more favorably.

In the above-described embodiment, the sponge brushes 105 and 109 are composed of four independent island-shaped members.
However, it is not necessary to be composed of a plurality of members. For example, it may be constituted by one sponge brush having a circular contact portion having the same size as the above-mentioned scrub areas S10 and S20.

In the above-described embodiment, the cross-sectional shapes of the sponge brushes 105 and 109 are rectangular as shown in FIG. 4, but are not limited to this. For example, the cross section may be a mountain-shaped cross section as shown in FIG. 6 or a semicircular cross section as shown in FIG. 6 and 7, a step D is formed as in the case of FIG. Therefore, the step D scrapes off the end face R of the wafer W.
The end face R of the wafer W can be more favorably cleaned. The step D is formed as a slope in FIG. 6 and a curved surface in FIG. 7. In such a case, however, the end face of the wafer is scraped as compared with the case of a vertical step as shown in FIG. Since the removal can be performed smoothly, the life of the sponge brush can be extended.

FIGS. 6 and 7 also show wafer W
The sponge brush 105 not pressed against
In the case where the sponge brushes 105 and 109 are pressed against the wafer W by a predetermined pressing amount, the height of the sponge brushes 105 and 109 is slightly reduced (a predetermined pressing amount). That is, the contact portions S1, S2 during scrub cleaning
Are the positions indicated by the broken lines in each figure.

Further, in the above-described embodiment, the wafer W is rotated by the roller pins 102 and 103 for holding the end surface of the wafer W. Wafer holding means (so-called spin chuck) or the like
May be rotated. In this case, the rotation axis (rotation axis) of the substrate holding means such as a spin chuck coincides with the rotation axis of the wafer W.

Further, in one embodiment described above,
Although the relative positions of the wafer W and the scrub units 106 and 110 held by the end face supporting hands 100 and 101 are fixed, the relative positions may be changed, for example, a scrub unit. 10
6, 110 may swing relative to the wafer W. Even in this case, if the contact portions S1 and S2 of the sponge brushes 105 and 109 are brought into contact with at least a part of the peripheral portion of the wafer W during the swinging, the peripheral portion of the wafer W Can be satisfactorily cleaned.

In the above-described embodiment, the case where scrub cleaning is performed on both surfaces of the wafer W is described. However, the present invention is not limited to this, and the present invention performs scrub cleaning on one surface of the wafer W. It can also be applied to things.

Also, in one embodiment described above, C
Although the case of scrub cleaning the wafer W after the MP processing has been described, the present invention is not limited to this, and the present invention can be widely applied to scrub cleaning of the wafer W. However, since the strongly adhered slurry or the like remains on the surface of the wafer W after the CMP processing, it is particularly effective to apply the cleaning to the wafer W after the CMP processing.

Further, in one embodiment described above,
Although the case of cleaning the semiconductor wafer W has been described, the present invention is also applicable to cleaning various substrates such as glass substrates for liquid crystal display devices and plasma displays, and substrates for optical, magnetic and magneto-optical disks. It can be widely applied to

In addition, various design changes can be made within the scope of the matters described in the claims.

[0055]

As described above in detail, according to the substrate cleaning apparatus of the first aspect of the present invention, unnecessary substances adhering to the edge of the peripheral portion of the substrate can be favorably obtained without damaging the substrate surface. This has the effect of being eliminated. Also,
Unnecessary substances firmly attached to the center of the substrate can also be removed. In addition, unnecessary substances inside the substrate can be swept out of the substrate, and unnecessary substances attached to the end surface of the peripheral portion of the substrate can be effectively scraped off.

According to the substrate cleaning apparatus of the second aspect of the present invention, there is an effect that the central portion of the substrate can be satisfactorily cleaned in addition to the end surface of the peripheral portion of the substrate.

According to the substrate cleaning apparatus of the third aspect of the present invention, unnecessary substances remaining on the surface of the substrate can be flowed out of the substrate, and the edge of the peripheral portion of the substrate can be cleaned even better. It has the effect of being able to.

According to the substrate cleaning apparatus of the fourth aspect, there is an effect that it is possible to satisfactorily clean almost all portions of the end face of the peripheral portion of the substrate.

[Brief description of the drawings]

FIG. 1 is a plan view showing a configuration of a main part of a substrate cleaning apparatus according to an embodiment of the present invention.

FIG. 2 is a side view showing a configuration of a main part of the substrate cleaning apparatus according to one embodiment of the present invention.

FIG. 3 is a plan view showing a configuration of a scrub unit of the substrate cleaning apparatus according to one embodiment of the present invention.

4 is a sectional view of the sponge brush in FIG.

FIG. 5 is a cross-sectional view showing a contact state between a sponge brush and an end surface of a peripheral portion of a wafer.

FIG. 6 is a sectional view of a sponge brush according to another embodiment of the present invention.

FIG. 7 is a sectional view of a sponge brush according to still another embodiment of the present invention.

[Explanation of symbols]

 100, 101 End face supporting hand (substrate holding means) 102, 103 Roller pin 104, 108 Base part 105, 109 Sponge brush (substrate cleaning member) 106, 110 Scrub unit 107, 111 Nozzle (cleaning liquid supply means) OS Sponge brush rotating shaft ( OW Wafer rotation axis (substrate rotation axis) R End surface S1, S2 Contact area S10, S20 Scrub area T Arc range W Wafer (substrate)

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 21/304 644 H01L 21/304 644C

Claims (7)

[Claims] 1. A substrate cleaning member for performing scrub cleaning in contact with a substrate, wherein a contact portion to be brought into contact with the substrate is made of a porous material made of polyethylene or polypropylene. . 2. The substrate cleaning member according to claim 1, further comprising a plurality of contact portions which are arranged apart from each other in an island shape. 3. The substrate cleaning member according to claim 1, wherein the substrate cleaning member is manufactured by a molding method. 4. A substrate holding means for holding a substrate so that the substrate rotates about a predetermined rotation axis; a cleaning liquid supply means for supplying a cleaning liquid to the substrate held by the substrate holding means; The substrate cleaning member according to any one of claims 1 to 3, further comprising a contact portion that contacts the substrate held by the substrate cleaning member, the substrate cleaning member being rotated about a rotation axis substantially parallel to the rotation axis of the substrate. A substrate cleaning apparatus, comprising: 5. The substrate cleaning apparatus according to claim 4, wherein the contact portion of the substrate cleaning member is provided so as to contact at least a part of a peripheral portion of the substrate. 6. The substrate cleaning apparatus according to claim 4, wherein the substrate is a hydrophobic wafer. 7. A substrate cleaning member made of a porous material made of polyethylene or polypropylene, which is to be brought into contact with the substrate, is brought into contact with the substrate, and the substrate is scrubbed while the cleaning liquid is supplied to the substrate. Substrate cleaning method.