JPH10339701A - Device and method for checking defect on substrate - Google Patents

Device and method for checking defect on substrate

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Publication number
JPH10339701A
JPH10339701A JP9164951A JP16495197A JPH10339701A JP H10339701 A JPH10339701 A JP H10339701A JP 9164951 A JP9164951 A JP 9164951A JP 16495197 A JP16495197 A JP 16495197A JP H10339701 A JPH10339701 A JP H10339701A
Authority
JP
Japan
Prior art keywords
substrate
light
light receiving
angle
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9164951A
Other languages
Japanese (ja)
Other versions
JP3832028B2 (en
Inventor
Kinya Kato
欣也 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
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Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP16495197A priority Critical patent/JP3832028B2/en
Publication of JPH10339701A publication Critical patent/JPH10339701A/en
Application granted granted Critical
Publication of JP3832028B2 publication Critical patent/JP3832028B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PROBLEM TO BE SOLVED: To check various defects on the respective layers of substrate with high reliability. SOLUTION: This device is provided with an optical illumination system 10 with which an optical axis is arranged at an angle θi from 80 deg. to 89 deg. to a normal on the surface of wafer W, light receiving means 30 for receiving light containing information on the surface of wafer W illuminated by the optical illumination system 10, light reception angle setting means 40 for setting the light reception angle of light receiving means 30 in order to selectively receive prescribed light from the wafer W, and rotating mechanism 50 for rotating the wafer W around an axial line crossing the surface of wafer W. Since the optical axis of optical illumination system 10 is arranged at the angle closer to 90 deg. to the normal on the surface of wafer, most of illuminating light is reflected on the surface of wafer W, and the information on the surface of wafer W is mainly extracted.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、基板の欠陥検査装
置及び欠陥検査方法に関し、特に基板表面の膜厚むら、
汚れ、基板に形成されたパターンの段差、露光忘れ、表
面の傷等のマクロ的欠陥を検査する欠陥検査装置及び欠
陥検査方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a defect inspection apparatus and a defect inspection method for a substrate, and more particularly to a method of inspecting a substrate for uneven film thickness.
The present invention relates to a defect inspection apparatus and a defect inspection method for inspecting macroscopic defects such as dirt, steps in a pattern formed on a substrate, forgetting exposure, and surface scratches.

【0002】[0002]

【従来の技術】半導体用ウエハなどの基板を自動検査す
るための従来技術としては、特公平6−8789号公報
に開示されているように、基板に対する照明光の入射角
を可変にし、基板表面からの正反射光をカメラで撮影し
てその画像情報を基に基板の汚れ、傷などの欠陥を検査
する方法がある。また、特開平8−75661号公報に
は、基板上の繰り返しパタ―ンからの回折光のみを受光
して基板上の傷、異物、シミなどの欠陥を検査する方法
が開示されている。
2. Description of the Related Art As a prior art for automatically inspecting a substrate such as a semiconductor wafer, as disclosed in Japanese Patent Publication No. 6-8789, the incident angle of illumination light with respect to the substrate is made variable, There is a method of photographing specularly reflected light from a camera with a camera and inspecting the substrate for defects such as dirt and scratches based on the image information. Further, Japanese Patent Application Laid-Open No. 8-75661 discloses a method of inspecting a substrate for defects such as scratches, foreign matter, and spots by receiving only the diffracted light from the repetitive pattern on the substrate.

【0003】[0003]

【発明が解決しようとする課題】半導体を製造する際に
は、基板は多数のプロセスを経て処理されるので、それ
らのプロセス毎の検査や管理が必要となるが、以上のよ
うな従来技術によれば、特に重ねて形成された複数の層
のうち1層を分離して検査することが困難であった。
When a semiconductor is manufactured, the substrate is processed through a number of processes, so that inspection and management are required for each process. According to this, it has been particularly difficult to separate and inspect one of a plurality of layers formed in layers.

【0004】半導体ウエハのなかには、周期的な繰り返
しパタ―ンの上に透明な薄膜などが塗布され、表面がほ
とんど平坦なものや、あるいは表面層とその下の層で繰
り返しパタ―ンのピッチが異なるようなものが存在す
る。
In a semiconductor wafer, a transparent thin film or the like is applied on a periodic repetition pattern, and the surface is almost flat, or the pitch of the repetition pattern between the surface layer and the layer below the same. There are different things.

【0005】例えば前者のような表面が平坦な試料から
の回折光を受光すると、下層の繰り返しパタ―ンからの
情報が中心で、表面の薄膜のマクロ的検査は困難であっ
た。
For example, when diffracted light from a sample having a flat surface such as the former is received, information from a repetitive pattern of the lower layer is mainly used, and macroscopic inspection of a thin film on the surface is difficult.

【0006】また後者のような場合は、検査すべき層の
パタ―ンのピッチに合わせて回折光を受光できればよい
が、表面層の透明薄膜のパタ―ンピッチが下層のパタ―
ンピッチの整数倍になった場合は、それぞれの回折光を
別々に受光することが困難であるため、工程(層)毎の
欠陥情報を誤り無く検出することが困難であった。
In the latter case, it is sufficient that the diffracted light can be received in accordance with the pattern pitch of the layer to be inspected. However, the pattern pitch of the transparent thin film on the surface layer is lower than that of the lower layer.
When the pitch is an integral multiple of the pitch, it is difficult to separately receive each of the diffracted lights, and it has been difficult to detect defect information for each process (layer) without error.

【0007】そこで本発明は、工程(層)毎の種々の欠
陥を高い信頼性をもって検査できる欠陥検査装置及び欠
陥検査方法を提供することを目的とする。
Accordingly, an object of the present invention is to provide a defect inspection apparatus and a defect inspection method capable of inspecting various defects in each step (layer) with high reliability.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、請求項1に係る発明による基板の欠陥検査装置は、
図1と図2に示されるように、基板Wの表面の法線に対
して光軸が80°〜89°の角度θiをもって配置され
た照明光学系10と;前記照明光学系10によって照明
された基板Wの表面に関する情報を含んだ光を受光する
受光手段30と;前記基板Wからの所定の光を選択的に
受光するために、前記受光手段の受光角を設定する受光
角設定手段40と;前記基板Wの表面と交差する軸線回
りに前記基板を回転させる回転機構50とを備える。
In order to achieve the above object, a defect inspection apparatus for a substrate according to the first aspect of the present invention comprises:
As shown in FIGS. 1 and 2, an illumination optical system 10 whose optical axis is arranged at an angle θi of 80 ° to 89 ° with respect to a normal to the surface of the substrate W; A light receiving means 30 for receiving light including information on the surface of the substrate W; and a light receiving angle setting means 40 for setting a light receiving angle of the light receiving means for selectively receiving predetermined light from the substrate W. And a rotation mechanism 50 for rotating the substrate about an axis crossing the surface of the substrate W.

【0009】このように構成すると、照明光学系の光軸
が基板表面の法線に対して80°〜89°という90°
に近い角度をもって配置されているので、照明光の大半
が基板の表面で反射され、主として基板の表面の情報が
取り出される。そのような情報を含んだ光を受光する受
光手段が、受光角設定手段により所定の受光角に設定さ
れようになっているので、基板からの所定の光、例えば
所定の方向に向かう回折光を選択的に受光することがで
きる。また、基板の表面と交差する軸線回りに基板を回
転させる回転機構を備えるので、任意の方向のパターン
や傷に対処できる。ここで、その軸線は一般的には基板
の表面に垂直な軸線である。
With this configuration, the optical axis of the illumination optical system is 90 °, ie, 80 ° to 89 ° with respect to the normal to the substrate surface.
, Most of the illumination light is reflected by the surface of the substrate, and mainly information on the surface of the substrate is extracted. Since the light receiving means for receiving the light containing such information is set to a predetermined light receiving angle by the light receiving angle setting means, predetermined light from the substrate, for example, diffracted light traveling in a predetermined direction, Light can be selectively received. Further, since a rotation mechanism for rotating the substrate about an axis intersecting with the surface of the substrate is provided, it is possible to deal with patterns and scratches in any direction. Here, the axis is generally an axis perpendicular to the surface of the substrate.

【0010】ここで、請求項2に記載のように、受光角
設定手段は、照明光学系と基板とを一体的に傾斜させて
受光角を設定するように構成されていてもよい。
Here, the light receiving angle setting means may be configured to set the light receiving angle by inclining the illumination optical system and the substrate integrally.

【0011】このように構成すると、照明光学系と基板
とを一体的に傾斜させるので、照明光の入射角は一定に
保ったまま、受光角を任意に設定できる。また、検査装
置中で受光光学系を固定的に配置することができる。
With this configuration, the illumination optical system and the substrate are integrally tilted, so that the light reception angle can be set arbitrarily while the incident angle of the illumination light is kept constant. Further, the light receiving optical system can be fixedly arranged in the inspection apparatus.

【0012】請求項3に係る発明による基板の欠陥検査
方法は、基板の表面に対して80°〜89°の入射角を
もって前記基板を照明する照明工程と;前記照明工程で
照明された前記基板にて生ずる、前記基板の表面に関す
る情報を含んだ光のうちの所定の光を、選択的に受光す
る受光工程と;前記受光工程で得られた情報に基づいて
前記基板の欠陥を検出する工程とを備える。
A method for inspecting a defect of a substrate according to a third aspect of the present invention includes an illumination step of illuminating the substrate with an incident angle of 80 ° to 89 ° with respect to the surface of the substrate; and the substrate illuminated in the illumination step. A light receiving step of selectively receiving predetermined light out of light including information on the surface of the substrate, which occurs in the step; and a step of detecting a defect of the substrate based on the information obtained in the light receiving step. And

【0013】この方法では、基板表面に対して80°〜
89°という90°に近い角度をもって基板が照明され
るので、照明光の大半が基板の表面で反射され、主とし
て基板の表面の情報が取り出される。基板の表面に関す
る情報を含んだ光のうちの所定の光を選択的に受光する
ので、選択された光に応じた欠陥が検出される。
[0013] In this method, the substrate surface is formed at an angle of 80 °
Since the substrate is illuminated at an angle close to 90 ° of 89 °, most of the illuminating light is reflected by the surface of the substrate, and mainly information on the surface of the substrate is extracted. Since a predetermined light of the light including the information on the surface of the substrate is selectively received, a defect corresponding to the selected light is detected.

【0014】上記方法では、請求項4に記載のように、
前記受光工程は、前記基板にて生ずる所定の回折光、散
乱光あるいは正反射光を選択的に受光するのが望まし
い。
[0014] In the above method, as set forth in claim 4,
In the light receiving step, it is desirable to selectively receive predetermined diffracted light, scattered light or specular reflected light generated on the substrate.

【0015】この場合、選択された光が正反射光であれ
ば、基板表面の膜厚むら、しみや汚れに関する情報が、
回折光であれば、基板上のパターンの情報が、そして散
乱光であれば、表面の傷や異物の情報が主として拾われ
る。そして欠陥を検出する工程で、それらの基板に係わ
る欠陥が検出される。
In this case, if the selected light is specularly reflected light, information on the film thickness unevenness, spots and dirt on the substrate surface is expressed as:
In the case of diffracted light, information on the pattern on the substrate is mainly picked up, and in the case of scattered light, information on surface scratches and foreign substances is mainly picked up. Then, in the step of detecting defects, defects relating to those substrates are detected.

【0016】以上の方法では、請求項5に記載のよう
に、前記欠陥を検出する工程は、前記受光工程で得られ
た情報と前記基板の基準状態を示す基準情報とを比較す
る工程をさらに備えてもよい。
In the above method, the step of detecting the defect may further comprise a step of comparing information obtained in the light receiving step with reference information indicating a reference state of the substrate. May be provided.

【0017】[0017]

【発明の実施の形態】以下、本発明の実施の形態につい
て、図面を参照して説明する。図1は、本発明による基
板の欠陥検査装置の実施の形態を示す側面図であり、図
2は図1の装置の平面図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a side view showing an embodiment of a substrate defect inspection apparatus according to the present invention, and FIG. 2 is a plan view of the apparatus shown in FIG.

【0018】図1に示されるように、照明光学系10は
基板ステ―ジSTGに対して相対的に固定されている。
基板ステ―ジSTG上に取り付けられていてもよい。さ
らに基板ステージSTGの上面には、基板Wを載置する
面を有する試料台20が設けられている。
As shown in FIG. 1, the illumination optical system 10 is fixed relatively to the substrate stage STG.
It may be mounted on the substrate stage STG. Further, a sample stage 20 having a surface on which the substrate W is placed is provided on the upper surface of the substrate stage STG.

【0019】照明光学系には、照明光を供給するライト
ガイド11がその光射出端面12を基板Wの方向に向け
て配置されている。射出端面12の光の進行方向には、
試料台に載置される基板の表面の法線に平行な方向にパ
ワ―を持つ円筒凹面鏡13が、その焦点位置に射出端面
12が位置するように配置され、円筒凹面鏡13で反射
された射出端面12からの光の進行方向には、前記法線
に直角な方向にパワ―を持つ円筒凹面鏡14が、その焦
点位置に射出端面12が位置するように配置されてい
る。
In the illumination optical system, a light guide 11 for supplying illumination light is arranged with its light emitting end face 12 facing the direction of the substrate W. In the light traveling direction of the exit end face 12,
A cylindrical concave mirror 13 having power in a direction parallel to the normal line of the surface of the substrate placed on the sample stage is arranged so that the emission end face 12 is located at the focal position, and the emission reflected by the cylindrical concave mirror 13 In the light traveling direction from the end face 12, a cylindrical concave mirror 14 having power in a direction perpendicular to the normal line is arranged so that the emission end face 12 is located at the focal position.

【0020】ここで、円筒凹面鏡14で反射された射出
端面12からの光が、試料台20上に載置された基板W
の表面に、80°〜89°の角度をもって入射するよう
に、照明光学系10は配置されている。即ち、照明光学
系10の光軸が、試料台20上に載置された基板Wの表
面に、前記のような角度をもつように、配置されてい
る。
Here, the light from the exit end face 12 reflected by the cylindrical concave mirror 14 is transmitted to the substrate W placed on the sample stage 20.
The illumination optical system 10 is arranged so as to be incident on the surface at an angle of 80 ° to 89 °. That is, the optical axis of the illumination optical system 10 is disposed on the surface of the substrate W mounted on the sample stage 20 so as to have the above-described angle.

【0021】このように構成されているので、ライトガ
イド11の射出端面12から射出された光は、基板の表
面の法線方向、即ち鉛直方向、基板表面の法線直角方
向、即ち水平方向の両方向共に実質的に平行である光束
L1となって基板Wを90°に近い入射角(基板の表面
にすれすれの入射角)で入射し、基板の表面を照明す
る。このため媒質の異なる境界面での光の反射、屈折に
関するフレネルの式により、照明光の大半は基板の表面
で反射されるので、基板(被検試料)内部の情報ではな
く、主に表面の情報を取り出すことができる。
With this configuration, the light emitted from the emission end face 12 of the light guide 11 is directed in the direction normal to the surface of the substrate, ie, in the vertical direction, and in the direction perpendicular to the direction normal to the surface of the substrate, ie, in the horizontal direction. A light beam L1 that is substantially parallel in both directions is incident on the substrate W at an incident angle close to 90 ° (a slight incident angle on the surface of the substrate) to illuminate the surface of the substrate. For this reason, most of the illumination light is reflected on the surface of the substrate by the Fresnel's formula regarding the reflection and refraction of light at different interfaces of the medium. Information can be extracted.

【0022】また基板Wを照明する照明光学系の開口数
(N.A.)が、基板表面の法線と照明光学系10の光
軸とを含む面方向、図1でいえば紙面方向と、それに直
交する方向とで等しくなるように、ライトガイド11の
端面12の形状は、円筒凹面鏡13と円筒凹面鏡14の
それぞれの焦点距離に比例する寸法とするとよい。
The numerical aperture (NA) of the illumination optical system for illuminating the substrate W is different from the plane direction including the normal of the substrate surface and the optical axis of the illumination optical system 10, ie, the paper plane direction in FIG. The shape of the end face 12 of the light guide 11 may be a dimension proportional to the focal length of each of the cylindrical concave mirror 13 and the cylindrical concave mirror 14 so that the end face 12 is equal in the direction perpendicular to the direction.

【0023】一方、基板の表面状態に関する情報を含ん
だ基板からの光を受光する受光光学系30が、基板から
の光の進行方向に設けられている。図1中、受光光学系
30は、凹面反射鏡31が基板Wからの正反射光を受光
する方向、即ち本実施の形態では、基板上の反射角が8
0°〜89°の入射角と同じ角度で入射点おける法線に
対して反対側の方向に配置されている。さらに凹面反射
鏡31からの反射光の進行方向には、結像レンズ32と
2次元イメ―ジセンサ33がこの順に、かつ基板Wの表
面と2次元イメ―ジセンサ33の表面とが実質的に共役
になるように配置されている。
On the other hand, a light receiving optical system 30 for receiving light from the substrate including information on the surface condition of the substrate is provided in the direction of travel of the light from the substrate. In FIG. 1, the light receiving optical system 30 has a direction in which the concave reflecting mirror 31 receives the specularly reflected light from the substrate W, that is, in this embodiment, the reflection angle on the substrate is 8
It is arranged at the same angle as the incident angle of 0 ° to 89 ° and in the direction opposite to the normal at the incident point. Further, in the traveling direction of the reflected light from the concave reflecting mirror 31, the imaging lens 32 and the two-dimensional image sensor 33 are arranged in this order, and the surface of the substrate W and the surface of the two-dimensional image sensor 33 are substantially conjugated. It is arranged to become.

【0024】したがって、基板Wで正反射された平行な
光束L2は凹面反射鏡31で反射され、結像レンズ32
の入射瞳位置に集光され、基板Wの表面の正反射画像を
2次元イメ―ジセンサ33上に結ぶ。
Accordingly, the parallel light beam L2 specularly reflected by the substrate W is reflected by the concave reflecting mirror 31, and the image forming lens 32
And a regular reflection image of the surface of the substrate W is formed on the two-dimensional image sensor 33.

【0025】ここで照明効率の点からも、照明光学系1
0の開口数(N.A.)と受光光学系系30の開口数は
実質的に揃えておくことが望ましい。
Here, from the viewpoint of illumination efficiency, the illumination optical system 1
It is desirable that the numerical aperture (NA) of 0 and the numerical aperture of the light receiving optical system 30 be substantially the same.

【0026】基板Wの表面のレジスト塗布むらや部分的
な露光異常などの原因による異常な段差などがあると反
射率がそのような異常を反映したものとなり、正常な基
板のそれとは異なるので、比較することにより異常を検
出することができる。
If there is an abnormal step due to uneven resist coating on the surface of the substrate W or partial exposure abnormality, the reflectivity reflects such an abnormality, and is different from that of a normal substrate. An abnormality can be detected by comparing.

【0027】次に回折光を受光する場合を考える。被検
基板W上に周期的な繰り返しパタ―ンがあればそのピッ
チに応じて回折光が生ずる。図1のように入射角θiに
対する回折角θdは、パタ―ンのピッチと波長をそれぞ
れp、λ、回折の次数をm(整数)とすると以下の関係
を満足する。
Next, consider the case of receiving diffracted light. If there is a periodic repetitive pattern on the test substrate W, diffracted light is generated according to the pitch. As shown in FIG. 1, the diffraction angle θd with respect to the incident angle θi satisfies the following relationship when the pattern pitch and wavelength are p and λ, respectively, and the diffraction order is m (integer).

【0028】 sinθd―sinθi=mλ/p (1) 入射角が90゜に近い場合、式(1)におけるsinθi
は、ほぼ1に等しくなるので、sinθi=1と置けば、
式(1)は、 sinθd=mλ/p+1 (2) となる。
Sin θd−sin θi = mλ / p (1) When the incident angle is close to 90 °, sin θi in equation (1)
Is approximately equal to 1, so if we put sinθi = 1,
Equation (1) becomes sin θd = mλ / p + 1 (2)

【0029】回折光を受光する場合はパタ―ンのピッチ
情報に応じて、式(1)で決まる受光角に設定しなけれ
ばならないが、受光光学系30a全体を基板Wの中心の
回りに回転させることにより受光角を調節し、図1の破
線で示めされるように、基板表面からの射出角を式
(1)で求められる回折角θdに設定することにより、
回折光L3による画像を得ることができる。
In order to receive the diffracted light, the light receiving angle must be set to a value determined by the equation (1) according to the pattern pitch information, but the entire light receiving optical system 30a is rotated around the center of the substrate W. The light receiving angle is adjusted by setting the angle of incidence, and as shown by the broken line in FIG. 1, the emission angle from the substrate surface is set to the diffraction angle θd obtained by Expression (1).
An image using the diffracted light L3 can be obtained.

【0030】ここで正常なパタ―ンに対してパタ―ン段
差や凹凸の比率(デュ―ティ―比)が異なると、回折効
率が異なり、回折像の明るさが正常なパタ―ンのそれと
は異なるので、比較することにより異常を検査すること
ができる。
Here, if the ratio of the pattern step and the unevenness (duty ratio) is different from the normal pattern, the diffraction efficiency is different and the brightness of the diffraction image is different from that of the normal pattern. Are different from each other, the abnormality can be inspected by comparison.

【0031】照明系の入射角を90゜付近にすることに
より、表面反射率を高め、表面からの回折光を効率良く
受光する点は、正反射光受光の場合と同様である。なお
受光角を変化させる他の方法として、照明光学系10と
基板Wとの相対的位置関係を一定に保持したまま、ステ
―ジSTG全体を傾斜させてもよい。そのために、基板
ステージSTGには、受光角設定手段40が設けられて
いる。その回転軸は、ほぼ基板Wの表面を含む平面内に
あり、照明光学系10の光軸に直交する方向に向いてい
る。
As in the case of regular reflection light reception, the surface reflectance is increased by setting the incident angle of the illumination system to around 90 °, and the diffracted light from the surface is efficiently received. As another method of changing the light receiving angle, the entire stage STG may be inclined while the relative positional relationship between the illumination optical system 10 and the substrate W is kept constant. For this purpose, the substrate stage STG is provided with a light receiving angle setting means 40. The rotation axis is substantially in a plane including the surface of the substrate W, and is oriented in a direction orthogonal to the optical axis of the illumination optical system 10.

【0032】また散乱光を受光する場合は、パタ―ンか
らの回折光が2次元イメージセンサ33に直接入射しな
い方向に受光光学系30を設定するのが望ましい。散乱
光の検出は基板W上の異物や傷の検出に有効であるが、
傷による散乱光は傷に対して直角の方向に強く出るの
で、傷の方向によって散乱光を受光すべき方向が異な
る。したがって、基板Wを載置する試料台20が360
゜回転できる構造になっている。試料台20は、基板ス
テージSTGに設けられた、試料台20の基板Wを載置
する上面、ひいては基板Wの表面の法線に平行な回転軸
を有する回転機構50(図1参照)により回転される。
回転機構50は、基板ステ―ジSTG上に取り付けられ
ていてもよい。
When receiving scattered light, it is desirable to set the light receiving optical system 30 in a direction in which diffracted light from the pattern does not directly enter the two-dimensional image sensor 33. The detection of scattered light is effective for detecting foreign matter and scratches on the substrate W,
Since the scattered light due to the flaw is strongly emitted in a direction perpendicular to the flaw, the direction in which the scattered light should be received differs depending on the direction of the flaw. Therefore, the sample stage 20 on which the substrate W is placed is 360
゜ The structure can be rotated. The sample stage 20 is rotated by a rotation mechanism 50 (see FIG. 1) provided on the substrate stage STG and having an upper surface on which the substrate W of the sample stage 20 is mounted and having a rotation axis parallel to the normal line of the surface of the substrate W. Is done.
The rotation mechanism 50 may be mounted on the substrate stage STG.

【0033】このようにして、基板Wは、上記法線回り
に少なくとも0゜、45゜の2方向で検査される。おの
おのの回転角における画像と正常なパタ―ンの画像とを
比較することにより異常を検査する点では前述2方式と
同様である。
Thus, the substrate W is inspected in at least two directions of 0 ° and 45 ° around the normal line. It is the same as the above-mentioned two systems in that an abnormality is inspected by comparing an image at each rotation angle with an image of a normal pattern.

【0034】以上のように、任意の受光角を選択できる
構成、及び基板表面の法線回りに回転して異なった方向
から基板の表面を観察できるように構成することによ
り、最適な観察の方向を設定できる他、異なる条件下で
得られる複数の画像情報を基に基板上の欠陥検査を行う
こともできる。
As described above, the optimum observation direction can be obtained by selecting a configuration in which an arbitrary light receiving angle can be selected and a configuration in which the substrate surface can be observed from different directions by rotating around the normal line of the substrate surface. Can be set, and a defect inspection on a substrate can be performed based on a plurality of pieces of image information obtained under different conditions.

【0035】図2に示されるように、凹面反射鏡31の
反射方向を基板Wの中心からずらしてあるのは、反射光
による検出をする際に、反射光に回折光の影響が及ばな
いようにするためである。
As shown in FIG. 2, the reason why the reflection direction of the concave reflecting mirror 31 is shifted from the center of the substrate W is to prevent the reflected light from being affected by the diffracted light when detecting the reflected light. In order to

【0036】次に、図3〜図5を参照して、本発明に係
る基板の欠陥検査方法の実施の形態を説明する。図3
は、検査開始を開始して、回折光を選択的に受光して行
う検査のフローを示し、図4は、正反射光を選択的に受
光して行う検査のフローを示し、図5は、散乱光を選択
的に受光して行う検査及び、基板の良、不良を判別し、
欠陥検査方法を終了するまでのフローを示している。
Next, an embodiment of a method for inspecting a defect of a substrate according to the present invention will be described with reference to FIGS. FIG.
Shows the flow of an inspection performed by starting the inspection and selectively receiving diffracted light, FIG. 4 shows a flow of an inspection performed by selectively receiving specularly reflected light, and FIG. Inspection performed by selectively receiving scattered light and discrimination between good and bad of the board,
The flow until the defect inspection method is completed is shown.

【0037】先ず図3に示されるように、本実施の形態
では、基板に形成されているパターンに関する情報を読
みとる(工程SP1)。そのパターンが周期性パターン
であるかを判断して(工程SP2)、周期性パターンで
なければ、回折光を受光して行う検査は不要であるの
で、正反射光を受光する検査(図4、工程SP8)にバ
イパスしてよい(X1)。
First, as shown in FIG. 3, in this embodiment, information on a pattern formed on a substrate is read (step SP1). It is determined whether or not the pattern is a periodic pattern (step SP2). If the pattern is not a periodic pattern, the inspection performed by receiving the diffracted light is unnecessary. It may be bypassed to step SP8) (X1).

【0038】周期性パターン、例えばラインアンドスペ
ースパターンであれば、基板の表面の法線回りの回転角
を、照明光を入射させる方向に対してラインの方向が直
交するように設定する(工程SP3)。
In the case of a periodic pattern, for example, a line and space pattern, the rotation angle around the normal to the surface of the substrate is set so that the direction of the line is orthogonal to the direction in which the illumination light is incident (step SP3). ).

【0039】また、パターンピッチに対する回折角を、
式(1)あるいは式(2)にしたがって計算する(工程
SP4)。計算で求められた回折角θdに、受光角度を
設定する(工程SP5)。もちろん、ここで工程3は工
程5の後でもよい。
The diffraction angle with respect to the pattern pitch is
The calculation is performed according to equation (1) or equation (2) (step SP4). The light receiving angle is set to the calculated diffraction angle θd (step SP5). Of course, step 3 may be performed after step 5 here.

【0040】以上のようにして方向と傾斜が設定された
基板の表面に、90°近い入射角で照明光を照射する
(工程6)。そして基板表面の情報を取り込んで基板か
ら生じる回折光を受光する。ここで、受光角は回折光を
受光しながら最も適切な角度にさらに調整してもよい。
The surface of the substrate whose direction and inclination are set as described above is irradiated with illumination light at an incident angle close to 90 ° (step 6). Then, information on the surface of the substrate is captured to receive the diffracted light generated from the substrate. Here, the light receiving angle may be further adjusted to the most appropriate angle while receiving the diffracted light.

【0041】取り込まれた画像を、予め用意されている
欠陥のない基板の状態を与える基準画像と比較して(工
程8)、許容できる程度に同じではない場合には不要品
と判断して、そのような基板は不良品トレイに納める
(X3、図5、工程28)。
The captured image is compared with a reference image which provides a state of a defect-free substrate prepared in advance (Step 8). Such a substrate is placed in a defective tray (X3, FIG. 5, step 28).

【0042】工程8で、基準画像と同じと判定された場
合は次の工程に移る(X1、図4、工程SP11)。
If it is determined in step 8 that the image is the same as the reference image, the process proceeds to the next step (X1, FIG. 4, step SP11).

【0043】なお、基板に形成されているパターンに関
する情報が、基板毎の特性として事前に知られていれ
ば、読みとる工程SP1と周期性パターンかの判断工程
SP2は省略して、以下説明する直接X1以下の正反射
受光工程、あるいは乱反射受光工程から、本検査方法を
開始してもよい。
If the information on the pattern formed on the substrate is known in advance as the characteristic of each substrate, the reading step SP1 and the step SP2 of determining whether the pattern is a periodic pattern are omitted, and the following description will be omitted. The present inspection method may be started from the regular reflection light receiving step of X1 or less or the irregular reflection light receiving step.

【0044】図4を参照して、正反射光を受光して行わ
れる検査工程を説明する。先ず、受光角を照明光の入射
角と同一に設定する(工程SP11)。次に、傾斜が
(受光角が)設定された基板の表面に、90°近い入射
角で照明光を照射する(工程12)。そして基板表面の
情報を取り込んで基板から反射する正反射光を受光し、
正反射画像を取り込む。ここで、受光角は反射光を受光
しながら最も適切な角度にさらに調整してもよい。
Referring to FIG. 4, an inspection process performed by receiving specularly reflected light will be described. First, the light receiving angle is set to be equal to the incident angle of the illumination light (step SP11). Next, illumination light is applied to the surface of the substrate whose inclination (the light receiving angle) is set at an incident angle close to 90 ° (step 12). And it takes in the information on the substrate surface and receives the specularly reflected light reflected from the substrate,
Capture a regular reflection image. Here, the light receiving angle may be further adjusted to the most appropriate angle while receiving the reflected light.

【0045】取り込まれた正反射画像を、予め用意され
ている欠陥のない基板の状態を与える基準画像と比較し
て(工程14)、許容できる程度に同じではない場合に
は不要品と判断して、そのような基板は不良品トレイに
納める(X3、図5、工程28)。工程14で、基準画
像と同じと判定された場合は次の工程に移る(X2、図
5、工程SP21)。
The captured specular reflection image is compared with a reference image prepared in advance, which gives a state of a defect-free substrate (step 14), and if not the same as an acceptable level, it is determined to be unnecessary. Then, such a substrate is placed in a defective product tray (X3, FIG. 5, step 28). If it is determined in step 14 that it is the same as the reference image, the process proceeds to the next step (X2, FIG. 5, step SP21).

【0046】図5を参照して、乱反射光を受光して行わ
れる検査工程を説明する。先ず、受光光学系を基板に対
して、乱反射光を受光するに適した受光角に設定する。
乱反射光は、正反射あるいは回折光の場合と違って、ほ
ぼあらゆる方向に発せられるが、例えば正反射光を避け
る方向、あるいは1次、2次の回折光の方向を避ける方
向に設定すれば、効率良く乱反射光による観察ができ
る。
Referring to FIG. 5, an inspection process performed by receiving diffusely reflected light will be described. First, the light receiving optical system is set at a light receiving angle suitable for receiving diffusely reflected light with respect to the substrate.
Diffusely reflected light is emitted in almost every direction, unlike the case of regular reflection or diffracted light. For example, if the direction is set so as to avoid specularly reflected light or to avoid the direction of primary and secondary diffracted light, Observation with diffused light can be performed efficiently.

【0047】このようにして方向と傾斜が設定された基
板の表面に、90°近い入射角で照明光を照射する(工
程22)。そして基板表面の情報を取り込んで基板から
生じる散乱光を受光する。ここで、受光角はあらためて
散乱光を受光しながら最も適切な角度にさらに調整して
もよい。
The surface of the substrate whose direction and inclination are set as described above is irradiated with illumination light at an incident angle close to 90 ° (step 22). Then, information on the substrate surface is taken in and scattered light generated from the substrate is received. Here, the light receiving angle may be further adjusted to the most appropriate angle while receiving the scattered light again.

【0048】取り込まれた画像を、予め用意されている
欠陥のない基板の状態を与える基準画像と比較して(工
程24)、許容できる程度に同じではない場合には不良
品と判断して、そのような基板は不良品トレイに納める
(X3、工程28)。そしてまだ検査すべ基板が残って
いるか否かを判断する(工程SP29)。
The captured image is compared with a reference image prepared in advance, which gives the state of a defect-free substrate (step 24), and if the images are not the same as acceptable, it is determined to be defective. Such a substrate is placed in a defective tray (X3, step 28). Then, it is determined whether or not the substrate to be inspected still remains (step SP29).

【0049】工程24で、基準画像と同じと判定された
場合は、次にさらに基板表面の法線回りの別の角度から
観察するかを判断し、別の角度から観察する場合は、こ
こで基板を回転し(工程SP26)、工程SP21に戻
り、その位置において散乱光を受光して行う検査を繰り
返す。
If it is determined in step 24 that the image is the same as the reference image, it is next determined whether or not to observe from another angle around the normal to the substrate surface. The substrate is rotated (step SP26), the process returns to step SP21, and the inspection performed by receiving scattered light at that position is repeated.

【0050】工程25で、基板をさらに回転させて観察
する必要がないと判断された場合は、基板を良品トレイ
に納める(工程SP27)。そしてまだ検査すべき基板
が残っているか否かを判断する(工程SP29)。
If it is determined in step 25 that the substrate does not need to be further rotated for observation, the substrate is placed in a non-defective tray (step SP27). Then, it is determined whether or not the substrate to be inspected still remains (step SP29).

【0051】まだ検査すべき基板が残っている場合は、
次の基板を検査テーブルに載せ(工程SP30)、その
基板が前に検査された基板と同じ種類の基板かを判断
し、同じ種類ではなければ工程SP1に戻り(X4)、
パターン情報の読込から工程を繰り返す。同じ種類であ
れば、パターン情報の読込みは不要であるので、工程S
P2に戻る。
If the substrate to be inspected still remains,
The next substrate is placed on the inspection table (step SP30), and it is determined whether the substrate is the same type of substrate as the substrate previously inspected. If not, the process returns to step SP1 (X4).
The process is repeated from reading the pattern information. If they are the same type, it is not necessary to read the pattern information.
Return to P2.

【0052】工程29で全ての基板が検査されたと判断
されると、この検査は終了する(END)。
If it is determined in step 29 that all the substrates have been inspected, the inspection is terminated (END).

【0053】以上、周期性パターンを受光する回折光受
光の工程、正反射光受光の工程、乱反射光受光の工程の
順番で実行する場合を説明したが、順番はこの限りにあ
らず、例えば正反射、乱反射、回折光の順番でもよい。
また、周期性パターンを有さない基板の場合は回折光受
光検査は省略してよいが、一般的には正反射工程と、乱
反射工程は省略しない。
The case where the steps of receiving the diffracted light for receiving the periodic pattern, the step of receiving the regular reflected light, and the step of receiving the irregularly reflected light are described above. However, the order is not limited to this. The order of reflection, irregular reflection, and diffracted light may be used.
In the case of a substrate having no periodic pattern, the diffracted light receiving inspection may be omitted, but the specular reflection step and the irregular reflection step are generally not omitted.

【0054】以上説明したように、欠陥のない基板の状
態即ち基準状態と、検査される基板を状態とを比較する
ことにより、欠陥を判別することができる。
As described above, the defect can be determined by comparing the state of the substrate having no defect, that is, the reference state, with the state of the substrate to be inspected.

【0055】以上のように、周期性を有する繰り返しパ
タ―ンの上に透明な薄膜などが塗布され、表面がほとん
ど平坦な試料の表面状態を検査する場合は、異物からの
散乱光を検出することにより異物を検出することができ
る。また表面の膜厚むらなどは表面の正反射画像が明る
さのむらとなるので検出することができる。
As described above, when inspecting the surface condition of a sample having a substantially flat surface with a transparent thin film applied on a periodic repeating pattern, scattered light from a foreign substance is detected. Thus, foreign matter can be detected. Further, the unevenness of the film thickness on the surface can be detected because the regular reflection image on the surface becomes uneven in brightness.

【0056】ここで、表面の反射率をできるだけ高め、
照明光が下層まで到達しないようにするために、照明系
の入射角は80°〜89°とし、できるだけ90゜に近
い角度にする。望ましくは87°〜89°とする。例え
ば一実施例では入射角88゜とする。この場合照明光の
大半(90%以上)が表面で反射される。図1は、入射
角88°の場合を示しているが、図1の(a)は、入射
する照明光と正反射光との関係が分かり易いように、入
射角80°の場合の試料周辺を部分的に示している。
Here, the reflectance of the surface is increased as much as possible,
In order to prevent the illumination light from reaching the lower layer, the incident angle of the illumination system is set to 80 ° to 89 °, and is set as close to 90 ° as possible. Desirably, it is 87 ° to 89 °. For example, in one embodiment, the incident angle is 88 °. In this case, most (90% or more) of the illumination light is reflected on the surface. FIG. 1 shows a case where the incident angle is 88 °, but FIG. 1A shows the vicinity of the sample when the incident angle is 80 ° so that the relationship between the incident illumination light and the regular reflection light can be easily understood. Is partially shown.

【0057】また、表面層と下層の繰り返しパタ―ンの
ピッチが異なるような試料では、検査すべき層のパタ―
ンのピッチに合わせて回折光を受光しなければならない
が、表面層と下層からの回折光同士がうまく分離できな
い場合(ピッチが整数倍の場合)も、やはり照明系の入
射角は80°〜89°とし、できるだけ90゜に近くす
る。さらに87°〜89°とするのが望ましい。例えば
望ましい実施例では入射角を88゜とする。このように
することにより、基板の表面反射率を高め、表面からの
回折光を効率良く受光することができる。
In a sample in which the pitch of the repetitive pattern of the surface layer and the lower layer is different, the pattern of the layer to be inspected is
Although the diffracted light must be received in accordance with the pitch of the light source, if the diffracted light from the surface layer and the lower layer cannot be separated well (when the pitch is an integral multiple), the angle of incidence of the illumination system is still 80 ° or more. 89 ° and as close as possible to 90 °. Further, the angle is desirably set to 87 ° to 89 °. For example, in a preferred embodiment, the incident angle is 88 °. This makes it possible to increase the surface reflectance of the substrate and efficiently receive the diffracted light from the surface.

【0058】このように試料に応じて最適な検出なモ―
ドを選択することによって、工程毎の種々の欠陥に対し
て信頼性の高い検査が可能となる。
As described above, the optimum detection mode according to the sample is
By selecting a code, a highly reliable inspection for various defects in each process can be performed.

【0059】また、照明光学系10及び受光光学系30
はテレセントリック光学系とするのが望ましい。このよ
うに構成すれば、被検査基板の表面全体にわたって同一
入射角をもって照明が行われ、また同一受光角をもって
観察することができる。したがって、基板表面の欠陥を
検査するのに、目視検査でよく行われるように基板の傾
斜を少しづつ変化させる必要がない。
The illumination optical system 10 and the light receiving optical system 30
Is preferably a telecentric optical system. With this configuration, illumination is performed at the same incident angle over the entire surface of the substrate to be inspected, and observation can be performed at the same light receiving angle. Therefore, it is not necessary to change the inclination of the substrate little by little in order to inspect the surface of the substrate for defects, as is often done by visual inspection.

【0060】また、照明光学系10は互いに直交方向で
パワ―の異なる2群の光学要素から成り、開口絞りの寸
法形状が前記パワ―に逆比例するように構成してもよ
い。
Further, the illumination optical system 10 may be composed of two groups of optical elements having different powers in orthogonal directions to each other, and the dimensional shape of the aperture stop may be inversely proportional to the power.

【0061】以上のように本発明によれば試料基板に応
じて反射光、回折光、散乱光の中から最適な検出モ―ド
を選択することができ、さまざまの工程における種々の
欠陥に対して信頼性の高い検査が可能となる。
As described above, according to the present invention, an optimum detection mode can be selected from among reflected light, diffracted light, and scattered light in accordance with a sample substrate, and various types of defects in various processes can be selected. And highly reliable inspection can be performed.

【0062】また、装置が表面の画像情報を入手するよ
うな構成となっているので、工程終了毎にこれらの検査
を行うことが望ましい。
Since the apparatus is configured to obtain surface image information, it is desirable to perform these inspections each time the process is completed.

【0063】またこれらの方法は、半導体ウエハばかり
でなく、液晶用の大型基板等の欠陥、異物の検出にも応
用できる。
These methods can be applied not only to the detection of defects and foreign substances in large substrates for liquid crystals but also to semiconductor wafers.

【0064】[0064]

【発明の効果】以上のように本発明によれば、照明光が
基板に対して80°〜89°の角度で入射するので、大
半の光が基板の表面で反射され、第1層である表面の欠
陥を検出することが可能となる。また基板の表面から所
定の光を選択的に受光するので、例えば正反射光、散乱
光、回折光の中からいずれかの光を選択して受光でき、
それらの光で検出するのに適した欠陥を検出することを
可能にする。このようにして、基板の各層毎の種々の欠
陥を高い信頼性をもって検査することができる。
As described above, according to the present invention, since the illumination light is incident on the substrate at an angle of 80 ° to 89 °, most of the light is reflected by the surface of the substrate, and the first layer is formed. Surface defects can be detected. Also, since predetermined light is selectively received from the surface of the substrate, for example, specular reflection light, scattered light, or any one of diffracted lights can be selected and received,
It makes it possible to detect defects suitable for detection with these lights. In this way, various defects in each layer of the substrate can be inspected with high reliability.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の欠陥検出装置の実施の形態を示す側面
図である。
FIG. 1 is a side view showing an embodiment of a defect detection device of the present invention.

【図2】図1の装置の平面図である。FIG. 2 is a plan view of the apparatus of FIG.

【図3】本発明の欠陥検出方法の実施の形態中、回折光
を受光して行う方法の部分を示すフロー図である。
FIG. 3 is a flowchart showing a part of a method for detecting and receiving diffracted light in an embodiment of the defect detection method of the present invention.

【図4】本発明の欠陥検出方法の実施の形態中、正反射
光を受光して行う方法の部分を示すフロー図である。
FIG. 4 is a flowchart showing a part of a method of receiving and receiving specularly reflected light in an embodiment of the defect detection method of the present invention.

【図5】本発明の欠陥検出方法の実施の形態中、散乱光
を受光して行う方法の部分を示すフロー図である。
FIG. 5 is a flowchart showing a part of a method of receiving scattered light in the embodiment of the defect detection method of the present invention.

【符号の説明】[Explanation of symbols]

10 照明光学系 11 ライトガイド(光ファイバー) 12 射出端面 13 円筒凹面鏡 14 円筒凹面鏡 20 試料台 30 受光光学系 31 凹面反射鏡 32 結像レンズ 33 2次元イメージセンサ 40 受光角設定手段 50 回転機構 θi 入射角 θd 回折角 W 基板 STG 基板ステージ L1 入射光 L2 反射光 L3 回折光 DESCRIPTION OF SYMBOLS 10 Illumination optical system 11 Light guide (optical fiber) 12 Emission end face 13 Cylindrical concave mirror 14 Cylindrical concave mirror 20 Sample stage 30 Reception optical system 31 Concave reflection mirror 32 Imaging lens 33 Two-dimensional image sensor 40 Reception angle setting means 50 Rotation mechanism θi Incident angle θd Diffraction angle W Substrate STG Substrate stage L1 Incident light L2 Reflected light L3 Diffracted light

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 基板の欠陥検査装置であって;前記基板
の表面の法線に対して光軸が80°〜89°の角度をも
って配置された照明光学系と;前記照明光学系によって
照明された基板の表面に関する情報を含んだ光を受光す
る受光手段と;前記基板からの所定の光を選択的に受光
するために、前記受光手段の受光角を設定する受光角設
定手段と;前記基板の表面と交差する軸線回りに前記基
板を回転させる回転機構とを備えることを特徴とする;
基板の欠陥検査装置。
1. An apparatus for inspecting defects of a substrate, comprising: an illumination optical system having an optical axis disposed at an angle of 80 ° to 89 ° with respect to a normal to the surface of the substrate; Light receiving means for receiving light including information on the surface of the substrate; light receiving angle setting means for setting a light receiving angle of the light receiving means for selectively receiving predetermined light from the substrate; A rotation mechanism for rotating the substrate about an axis intersecting the surface of the substrate;
Inspection device for substrate.
【請求項2】 前記受光角設定手段は、前記照明光学系
と前記基板とを一体的に傾斜させて受光角を設定するよ
うに構成されたことを特徴とする;請求項1に記載の、
基板の欠陥検査装置。
2. The light receiving angle setting unit according to claim 1, wherein the light receiving angle setting means is configured to set the light receiving angle by inclining the illumination optical system and the substrate integrally.
Inspection device for substrate.
【請求項3】 基板の表面に対して80°〜89°の入
射角をもって前記基板を照明する照明工程と;前記照明
工程で照明された前記基板にて生ずる、前記基板の表面
に関する情報を含んだ光のうちの所定の光を、選択的に
受光する受光工程と;前記受光工程で得られた情報に基
づいて前記基板の欠陥を検出する工程とを備えることを
特徴とする;基板の欠陥検査方法。
3. An illumination step of illuminating the substrate at an angle of incidence of 80 ° to 89 ° with respect to the surface of the substrate; including information about the surface of the substrate that occurs at the substrate illuminated in the illumination step. A light receiving step of selectively receiving a predetermined light out of the light; and a step of detecting a defect of the substrate based on information obtained in the light receiving step; Inspection methods.
【請求項4】 前記受光工程は、前記基板にて生ずる所
定の回折光、散乱光あるいは正反射光を選択的に受光す
ることを特徴とする;請求項3に記載の、基板の欠陥検
査方法。
4. The method according to claim 3, wherein the light receiving step selectively receives predetermined diffracted light, scattered light or specularly reflected light generated in the substrate. .
【請求項5】 前記欠陥を検出する工程は、前記受光工
程で得られた情報と前記基板の基準状態を示す基準情報
とを比較する工程をさらに備えることを特徴とする;請
求項3または請求項4に記載の、基板の欠陥検査方法。
5. The method according to claim 3, wherein the step of detecting the defect further includes a step of comparing information obtained in the light receiving step with reference information indicating a reference state of the substrate. Item 5. A method of inspecting a substrate for defects according to Item 4.
JP16495197A 1997-06-06 1997-06-06 Substrate defect inspection apparatus and defect inspection method Expired - Lifetime JP3832028B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16495197A JP3832028B2 (en) 1997-06-06 1997-06-06 Substrate defect inspection apparatus and defect inspection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16495197A JP3832028B2 (en) 1997-06-06 1997-06-06 Substrate defect inspection apparatus and defect inspection method

Publications (2)

Publication Number Publication Date
JPH10339701A true JPH10339701A (en) 1998-12-22
JP3832028B2 JP3832028B2 (en) 2006-10-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3832028B2 (en)

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