JPH10333601A - Electroluminescent element and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a high productivity of high-precision and high-density EL elements for a large display area obtainable, by arranging a thin film transistor(TFT) substrate and an electroluminescent(EL) substrate face to face, and connecting a drain electrode pad and one of a pair of electrodes via an adhesive electric connecting body. SOLUTION: A TFT substrate 3 and an EL substrate 6 are arranged face to face, an EL electrode pad 62 on the EL substrate 6 side and a drain electrode pad 22 on the TFT substrate 3 side are arranged face to face, and both electrodes are electrically connected by an adhesive electric connecting body 71 to form an EL element. A conductive adhesive dispersedly contained with conductive grains such as carbon grains, silver grains, or copper grains in an epoxy or phenol thermosetting adhesive is applied to the prescribed positions of one or both of the EL substrate 6 and TFT substrate 3 by screen printing, offset printing, or dispenser coating, then it is dried to obtain adhesive electric connecting body 71.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent device applicable to a display device, a light source, or a printer head of an electrophotographic printer, and a method of manufacturing the same. In particular, the present invention relates to a device using an organic electroluminescent body suitable for full-color display on a large screen and a method for manufacturing the same.

[0002]

2. Description of the Related Art Japanese Patent Application Laid-Open Nos. 6-256759, 6-136360, 6-1888074 and 6-192654 disclose organic electroluminescent materials. Kaihei 8-41
No. 452 is known.

Further, it is known that these organic electroluminescent bodies are driven by, for example, a thin film transistor described in JP-A-8-241048.

[0004]

However, in order to drive the organic electroluminescent element by the thin film transistor, it is necessary to provide the organic electroluminescent element for each drain electrode pad of the thin film transistor. It was necessary to pattern three electroluminescent bodies for emitting blue, green and red primary colors on a thin film transistor substrate. Because it has a large uneven surface compared to the body thin film,
It is difficult to pattern the electroluminescent thin film with high definition and high density, and furthermore, the low level based on the concentration of the two kinds of functional elements of the transistor and the electroluminescent body on the thin film transistor substrate. Had problems with productivity.

An object of the present invention is to provide an element using an organic electroluminescent body suitable for full-color display on a large screen which solves the above problems, and a method for manufacturing the same.

[0006]

According to the present invention, there are firstly provided a thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin film transistors on the row for each row, For each column, a source line commonly connected to sources of a plurality of thin film transistors on the column, a drain electrode pad connected to each drain of the thin film transistor,
And a transistor substrate having a capacitor connected in parallel with the drain electrode pad, and an electro-luminescent device having a pair of electrodes and an electro-luminescent body disposed between the pair of electrodes, arranged along a plurality of rows and columns. Having a luminescence substrate, a drain electrode pad and an electro-
An electroluminescent device in which a thin film transistor substrate and an electroluminescent substrate are oriented so that the luminescent body faces each other, and a drain electrode pad and one electrode of a pair of electrodes are connected through an adhesive electrical connector. The sense element has the first feature, and secondly, the first thin film transistors arranged along a plurality of rows and columns, and for each row, the gates of the plurality of first thin film transistors on the row are commonly connected. A gate line, a source line commonly connecting the sources of the plurality of first thin film transistors on the column, a second thin film transistor connected to each drain of the first thin film transistor, and a capacitor connected in parallel with the second thin film transistor for each column Wherein the gate of the second thin film transistor is connected to the drain of the first thin film transistor; A transistor substrate formed by connecting a drain electrode pad for each rain and connecting a source of the second thin film transistor to one electrode of the capacitor; and a plurality of rows and columns, and a pair of electrodes and the pair of electrodes. Having an electroluminescent substrate having an electroluminescent body disposed between the electrodes, and orienting the thin film transistor substrate and the electroluminescent substrate such that the drain electrode pad and the electroluminescent body face each other. An electroluminescent element, which is disposed and connected between the drain electrode pad and one of the pair of electrodes through an adhesive electrical connector, has a second feature, and thirdly, a plurality of rows and columns. Thin film transistors arranged along a row, and a gate in which the gates of a plurality of thin film transistors on the row are connected in common for each row. A transistor substrate including, for each line and column, a source line commonly connecting the sources of a plurality of thin film transistors on the column, a drain electrode pad connected to each drain of the thin film transistor, and a capacitor connected in parallel with the drain electrode pad And preparing an electroluminescent substrate having a pair of electrodes and an electroluminescent body disposed between the pair of electrodes, arranged along a plurality of rows and columns, and a drain electrode pad of a transistor substrate. An adhesive electrical connection is arranged on at least one of the electroluminescent body, and the thin film transistor substrate and the electroluminescent substrate are oriented and arranged so that the drain electrode pad and the electroluminescent body face each other. There is a third feature in the manufacturing method of the electroluminescent element to be superimposed. And fourthly, a thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of the plurality of thin film transistors on the row for each row, and a plurality of thin film transistors on the column for each column. Preparing a transistor substrate having a source line commonly connected to the source, a drain electrode pad connected to each drain of the thin film transistor, and a capacitor connected in parallel with the drain electrode pad, along a plurality of rows and columns. Disposing, preparing a pair of electrodes and an electroluminescent substrate having an electroluminescent body disposed between the pair of electrodes,
Disposing an adhesive electrical connection on at least one of the drain electrode pad and the electroluminescent body of the transistor substrate; and providing an adhesive electrical insulation on at least one of the drain electrode pad and the electroluminescent body of the transistor substrate. A step of arranging a body at a position to be an outer peripheral portion of the adhesive electrical connection body, and a thin film transistor substrate and an electro luminescence substrate oriented and arranged so that the drain electrode pad and the electro luminescence body face each other; The method for manufacturing an electroluminescent element having a step of overlapping has a fourth feature,
Fifth, thin film transistors arranged along a plurality of rows and columns, a gate line commonly connecting the gates of the plurality of thin film transistors on the row for each row, and a source of the plurality of thin film transistors on the column for each column A source line connected in common,
A step of preparing a transistor substrate provided with a drain electrode pad connected to each drain of the thin film transistor and a capacitor connected in parallel with the drain electrode pad, arranged along a plurality of rows and columns, and a pair of electrodes and the pair of electrodes; Providing an electroluminescent substrate having an electroluminescent body disposed between electrodes, and arranging an adhesive electrical connection on at least one of a drain electrode pad of the transistor substrate and the electroluminescent body Disposing an adhesive electric insulator on at least one of a drain electrode pad and an electroluminescent body of a transistor substrate at a position to be an outer peripheral portion of the adhesive electric connection body; The thin film transistor substrate and the element are Having a step of aligning and aligning the toro-luminescence substrate and overlapping, and a step of evacuating the thin-film transistor substrate and the electro-luminescence substrate to heat and cure the adhesive electrical connection body and the adhesive electrostatic insulator. The method for manufacturing an electroluminescent element has a fifth feature.

[0007] As the electro-crosic body,
A medium that emits three primary colors of blue, green and red,
Organic electroluminescent bodies are preferred.

[0008] As the above-mentioned adhesive electric connection body, one in which conductive particles are dispersed and contained in an adhesive, particularly a silane coupling agent is preferably contained.

[0009] It is preferable that an outer peripheral portion of the adhesive electrical connection body adopts an adhesive structure in which an adhesive electrical insulator is disposed.

Preferably, the thin film transistor uses a polysilicon semiconductor, a crystalline silicon semiconductor, a microcrystalline silicon semiconductor or an amorphous silicon semiconductor.

It is preferable that at least one of a pair of electrodes sandwiching the electroluminescent body is a ZnO transparent electrode having a texture structure.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the drawings.
Hereinafter, the thin film transistor is described as “TFT”, and the electroluminescent body is stored as “EL”.

FIG. 1 shows an active matrix 4-terminal TFT-E.
1 shows a schematic view of an L element. The element of each pixel includes two TFTs, a storage capacitor, and an EL element. A key feature of the four-terminal scheme is the ability to separate the addressing signal from the EL excitation signal. The EL element is selected via the logic TFT (T1), and the excitation power for the EL element is the power TFT (T1).
Controlled by 2). The storage capacitor allows it to retain the excitation power on the addressed EL element once selected. Thus, the circuit ignores the time that the EL element is allocated for addressing and
% To operate with a duty cycle close to%.

The gate lines Y _j and Y _{j + 1} are preferably arranged in a large number such as 640 lines and 1120 lines, and gate pulses are sequentially applied. The gate pulse may be interlaced scanning or non-interlaced scanning.

The source lines X _j , X _{j + 1} , X _{j + 2} are
Preferably, a large number of wires such as 840 wires or 1280 wires are wired, and an information signal pulse of a voltage set according to video data is applied in synchronization with a gate pulse.

In the figure, REL is a red light emitting EL, GEL is a green light emitting EL, BEL is a blue light emitting EL, and the source line X
_A red information signal pulse is applied to _j , a green information pulse is applied to X _{j + 1} , and a red information pulse is applied to X _{j + 2} . Thus, full-color display is performed.

FIG. 2 is a plan view showing a typical example of the TFT substrate 3 of the present invention. TFT1 corresponds to T1 in FIG.
FT2 corresponds to T2 in FIG. 1, capacitor 21 corresponds to Cs in FIG. 1, and drain electrode pad 22 corresponds to each EL in FIG.
Corresponds to the drain connection electrode of the T ₂ of the respective.

FIG. 3 is a sectional view taken along line AA 'of FIG. FIG. 4 is a sectional view taken along the line BB 'of FIG.

Examples of the TFT1 and TFT2 used in the present invention, to connect the source bus 24 to the n ⁺ polysilicon, and a drain connected to the n ⁺ polysilicon, a gate insulating film disposed across the I-type polycrystalline silicon film (Plasma-enhanced CVD) -SiO ₂ film 32 was arranged, and a transistor structure in which a gate bus was connected to n ⁺ polysilicon was adopted.

The present invention is not limited to the transistor structure described above, but can be applied to either a staggered structure using an amorphous silicon C microcrystalline silicon semiconductor or a coplanar structure.

Further, the present invention relates to an S-type semiconductor device using crystalline silicon.
MOS with O1 (silicon on insulator) structure
It can be applied to a transistor.

The capacitor Cs is formed by the pair of capacitor electrodes 41 and 42 of FIG. 4 and the SiO ₂ film 33 provided between the pair of capacitor electrodes. The capacitor electrode is formed of Al or the like and is connected to the ground bus 25, and the capacitor electrode 42 is formed of an n ⁺ polysilicon film and is connected to the drain of the TFT2.

As the gate bus 23 and the source bus 24, a chromium / aluminum laminated wiring is preferably used.

As passivation 34, plasma C
Depending on the VD, a silicon nitride film is suitable.

As the drain electrode pad 22, a metal film such as aluminum or silver can be used in order to give a reflection performance, but a transparent conductive film such as ITO or ZnO may be used.

FIG. 5 is a plan view of the EL substrate 6 used in the present invention, and FIG. 6 is a sectional view taken along the line CC 'of FIG.

The EL substrate 6 includes a glass substrate 61, a transparent electrode 51 as a pair of electrodes provided on the glass substrate 61, an EL electrode pad 62 of aluminum or the like forming a reflection surface, and an EL provided between the pair of electrodes. Composed of

As the EL 52, an organic EL is preferable.
In particular, components constituting REL, GEL and BEL are arranged.

Specific REL, GEL and BEL are listed below, but the present invention is not limited to these, and inorganic EL can be applied instead of organic EL.

The material for the organic EL of the present invention is Scozz
afava's EPA 349, 265 (1990); Ta
ng U.S. Pat. No. 4,356,429; VanS.
lyke et al., US Pat. No. 4,539,507;
U.S. Patent No. 4,720,43 to AnSlyke et al.
2; U.S. Patent No. 4,769,292 to Tang et al.
No .: U.S. Pat. No. 4,885,211 to Tang et al.
No. 4,950,95 to Perry et al.
0; U.S. Pat. No. 5,059,8 to Littman et al.
No. 61; VanSlyke U.S. Pat. No. 5,044.
U.S. Pat. No. 5,073,446; VanSlyke et al., U.S. Pat. No. 5,059,862; VanSlyke et al., U.S. Pat. No. 5,061,617; VanSlyk.
e, U.S. Pat. No. 5,151,629; Tang et al., U.S. Pat. No. 5,294,869; Tang et al., U.S. Pat. No. 5,294,870) can be used. The EL layer includes an organic hole injection / migration band that contacts the anode, and an electron injection / migration band that forms a junction with the organic hole injection / migration band. The hole injection and transfer zone may be formed from a single material or a plurality of materials, and is in contact with the anode and a continuous hole transfer layer interposed between the hole injection layer and the electron injection and transfer zone. Consists of Similarly, the electron injection and transfer zone can be formed from a single material or multiple materials, and the electron injection contacting the anode and a continuous electron transfer layer interposed between the electron injection layer and the hole injection and transfer zone. Consists of layers. The recombination and luminescence of holes and electrons occurs in the electron injection and migration bands adjacent to the junction of the electron injection and migration bands and the hole injection and migration bands. The compound forming the organic EL layer is typically deposited by evaporation, but can also be deposited by other conventional techniques.

In a preferred embodiment, the organic material comprising the hole injection layer has the following general formula:

[0032]

[Outside 1]

Wherein: Q is N or C—R M is a metal, metal oxide, or metal halide T1, T2 represents hydrogen or an unsaturated six-membered ring containing a substituent such as alkyl or halogen. Meet together. Preferred alkyl moieties contain about 1 to 6 carbon atoms while phenyl constitutes a preferred allyl moiety.

In a preferred embodiment, the hole transfer layer is an aromatic tertiary amine. A preferred subclass of aromatic tertiary amines includes tetraallyl diamine having the formula:

[0035]

[Outside 2]

Here, Are is an arylene group, and n is 1
To 4, and Ar, R ₇ , R ₈ , and R ₉ are each selected allyl groups. In a preferred embodiment, the luminescence, electron injection and migration bands are metal oxinoid (o
xinoid) compounds. Preferred examples of metal oxinoid compounds have the following general formula:

[0037]

[Outside 3]

Here, R ₂ -R ₇ represent the possibility of substitution. In another preferred embodiment, the metal oxinoid compound has the formula:

[0039]

[Outside 4]

Wherein R ₂ -R ₇ are as defined above, and L 1 -L 5 contain 12 or fewer carbon atoms intensively and each independently represents a hydrogen or carbohydrate group of 1 to 12 carbon atoms. L1 and L2 together or L
2, L3 may together form an associated benzo ring. In another preferred embodiment, the metal oxinoid compound has the formula:

[0041]

[Outside 5]

Where R ₂ -R ₆ represent hydrogen or other substitutability. The above examples merely represent certain preferred organic materials used in the electroluminescent layer. They are not intended to limit the field of view of the invention, which is generally indicative of an organic electroluminescent layer. As can be seen from the above example, the organic EL material contains a coordination compound having an organic ligand.

In the next process step, EL anode 84 is deposited on the surface of the device. The EL anode is made of any conductive material, but is preferably made of a material having a work function of 4 eV or less (see U.S. Pat. No. 4,885,211 to Tang et al.). Low work function materials are preferred for the anode. Because they readily emit electrons into the electron transfer layer. The lowest work function metals are alkali metals, however, their instability in air makes their use impractical under certain conditions. The anode material is typically deposited by chemical vapor deposition, but other suitable deposition techniques are applicable. A particularly preferred material for the EL anode has been found to be a 10: 1 (atomic ratio) magnesium: silver alloy. Preferably, the anode is applied as a continuous layer over the entire surface of the display panel. In another embodiment, the EL anode comprises a lower layer of low work function metal adjacent to the organic electron injection and transfer zone, overlaying the low work function metal and protecting the low work function metal from oxygen and humidity. And a protective layer.

Typically, the anode material is transparent and the cathode material is opaque, so that light is transmitted through the anode material. However, in an alternative embodiment, light is emitted on the cathode rather than the anode. In this case, the cathode is light transmissive and the anode is opaque. The practical balance between light transmission and technical conductivity is typically a thickness in the range of 5-25 nm.

In the present invention, a plastic film can be used in place of the glass substrate 61 used for the EL substrate 6, and ITO and ZnO can be used for the transparent electrode 51.

In order to increase the surface area of the EL 52, the transparent electrode 51 can adopt a texture structure having fine irregularities on the surface. In order to form a suitable texture structure, it is possible to use a sputtering method in which the substrate temperature at the time of depositing ZnO is set at a relatively high humidity such as 250 ° C. to 300 ° C.

The non-EL 52 region of the transparent electrode 51 is
A light shielding mask (not shown) can be provided. As a light-shielding mask at this time, a metal film such as an aluminum film or a cloth film, or a chromium oxide film or an aluminum oxide film for preventing the generation of light reflected by these metal films is used alone or is laminated on the metal film. Can be provided.
Since the metal film substantially lowers the resistance of the transparent electrode 51, it is preferable to stack a metal film on the transparent electrode 51 and further provide a metal oxide film thereon.

The transparent electrode 51 is set to ground or a predetermined DC voltage while the EL element of the present invention is being driven.

FIG. 7 is a sectional view of the EL device of the present invention. In the EL element, the TFT substrate 3 and the EL substrate 6 are opposed to each other.
2 and the drain electrode pad 22 on the TFT substrate 3 side are arranged to face each other, and an electrical connection is made between both electrodes by an adhesive electric connection body 71.

The adhesive electrical connection 71 is made of a conductive adhesive in which conductive particles such as carbon particles, silver particles and copper particles are dispersed and contained in an epoxy or phenolic thermosetting adhesive. By adopting a screen printing method, an offset printing method, a dispenser coating method, or the like, it can be obtained by applying to a predetermined position of the EL substrate 6 or the TFT substrate 3 or both of them and drying.

In the above-mentioned conductive adhesive, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane and N- (2-aminoethyl) -3-in order to enhance interfacial adhesive strength. Aminopropyltrimethoxysilane, 3
A silane coupling agent such as -aminopropyltrimethoxysilane, 3-aminopropylmethyldiethoxysilane, or 3-glycidoxypropyltrimethoxysilane.

As another example of the adhesive electric connection body 71,
And solder.

An adhesive electric insulator 72 is provided on the outer peripheral portion of the above-mentioned adhesive electric connection body 71. The adhesive electric insulator 72 is formed by applying an epoxy-based or phenol-based insulating adhesive to predetermined positions of the EL substrate 6 and / or the TFT substrate by a method such as an offset printing method, a screen printing method, or a dispenser coating method. , Dried. At this time, when applying the insulating adhesive and the conductive adhesive, an insulating adhesive is provided on one of the EL substrate 6 and the TFT substrate 3, and the substrate on which the insulating adhesive is not provided is provided. It is preferable to use a manufacturing method in which a conductive adhesive is provided.

Further, in the present invention, instead of the above-mentioned adhesive electric insulator 72, an insulator having no adhesive force, for example, an organic solvent, particularly a high-boiling organic solvent, a nematic liquid crystal, a cholesteric liquid crystal, a smectic liquid crystal or the like can be used. A liquid insulator such as a liquid crystal can also be used.

Further, the above-mentioned adhesive electric insulator 72 or non-adhesive electric insulator may contain a coloring material such as a coloring pigment or a paint so as to also have light-shielding curing.

In manufacturing the EL device of the present invention, a TFT
A conductive adhesive is applied on the drain electrode pad 22 of the substrate 3 using, for example, an offset printing method, and an insulating contact agent is applied to a region other than the EL electrode pad 62 of the EL substrate 6 (the outer peripheral portion of the EL electrode pad 62). For example, by applying an offset printing method, the drain electrode pad 22 and the EL electrode pad 6
The TFT substrate 3 and the EL substrate 6 are overlapped such that the two oppose each other, and then the air between the TFT substrate 3 and the EL substrate 6 is evacuated by a normal method. It is possible to adopt a method of applying pressure bonding heating and fixing closely.

FIG. 8 shows a vacuum exhaust device used when the air at the above intervals is exhausted. The TFT substrate 3 and the EL substrate 6 are placed on a stage 81 in a superposed state, and are shown by a sheet 83 such as a plastic film between a pair of O-rings 82 and 83 arranged and fixed around the stage 81. And then operate the evacuation pump 84,
The air in the seat 83 is exhausted.

FIG. 9 is an equivalent circuit of another EL element of the present invention.

[0059]

According to the present invention, high-definition and high-density EL pixels can be obtained with high productivity over a large area.

According to the present invention, high-luminance light emission can be obtained, and a high-definition, high-density and high-luminance color display can be obtained with high productivity.

Further, according to the present invention, it was possible to obtain a color display realizing stability against impact and display stability during long-term use.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit diagram of an EL element of the present invention.

FIG. 2 is a plan view of an EL pixel on a TFT substrate side used in the EL element of the present invention.

FIG. 3 is a sectional view taken along line AA ′ of FIG. 2;

FIG. 4 is a sectional view taken along line BB ′ of FIG. 3;

FIG. 5 is a plan view of an EL pixel on the EL substrate side used in the EL element of the present invention.

FIG. 6 is a sectional view taken along the line CC ′ of FIG. 5;

FIG. 7 is a cross-sectional view of the EL element of the present invention.

FIG. 8 is a sectional view of an evacuation apparatus used in the method of the present invention.

FIG. 9 is an equivalent circuit diagram of another EL element of the present invention.

[Explanation of symbols]

T1 first TFT T2 second TFT Cs capacitor REL red light emitting EL GEL green light emitting EL BEL blue emitting EL 21 capacitor 22 drain electrode pad 23 gate bus 24 source bus 25 ground bus 3 TFT substrate 31 glass substrate 32 PECVD film 33 SiO ₂ film 34 passivation film 41, 42 capacitor electrode 6 EL substrate 51 transparent electrode 52 EL 61 glass substrate 62 EL electrode pad 71 adhesive electrical connector 72 adhesive electrical insulator 81 stage 82, 83 O-ring 83 sheet 84 vacuum pump

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuichi Hashimoto 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Akihiro Senoo 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside the corporation

Claims (30)

[Claims] 1. A thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin transistors on the row for each row, and a plurality of thin film transistors on the column for each column A source line commonly connected to the source, a drain electrode pad connected to each drain of the thin film transistor, and a transistor substrate having a capacitor connected in parallel with the drain electrode pad, and arranged along a plurality of rows and columns, An electroluminescent substrate having a pair of electrodes and an electroluminescent body disposed between the pair of electrodes; and a thin film transistor substrate and an electroluminescent substrate, such that the drain electrode pad and the electroluminescent body face each other. The luminescent substrate is aligned and the drain electrode pad and one of the pair of electrodes An electroluminescent element connected through a gas connector. 2. The electroluminescent device according to claim 1, wherein the electroluminescent body includes a medium emitting three primary colors of blue, green and red. 3. The electroluminescent device according to claim 1, wherein the electroluminescent body includes an organic medium emitting three primary colors of blue, green and red. 4. The electroluminescent device according to claim 1, wherein the adhesive electrical connection body is formed by dispersing and containing conductive particles in an adhesive. 5. The electroluminescent device according to claim 1, wherein the adhesive electrical connection body comprises conductive particles dispersed in an adhesive and a silane coupling agent. . 6. The electroluminescent device according to claim 1, wherein an electric insulator is arranged on an outer peripheral portion of the adhesive electric connection body. 7. The electroluminescent device according to claim 1, wherein an adhesive electric insulator is arranged on an outer peripheral portion of the adhesive electric connection body. 8. The electroluminescent element according to claim 1, wherein an electrical insulator containing a colored body is arranged on an outer peripheral portion of said adhesive electrical connection body. 9. The electroluminescent device according to claim 1, wherein a liquid electrical insulator is disposed on an outer peripheral portion of said adhesive electrical connection body. 10. The electroluminescent device according to claim 1, wherein said thin film transistor has a polysilicon semiconductor layer. 11. The electroluminescent device according to claim 1, wherein said thin film transistor comprises an amorphous silicon semiconductor or a microcrystalline silicon semiconductor. 12. The electroluminescent device according to claim 1, wherein said thin film transistor comprises a crystalline silicon semiconductor. 13. The electroluminescent element according to claim 1, wherein at least one of the pair of electrodes sandwiching the electroluminescent body is a transparent electrode having a texture structure. 14. The electroluminescent device according to claim 1, wherein at least one of the pair of electrodes sandwiching the electroluminescent body is a ZnO transparent electrode having a texture structure. 15. A first arrangement arranged along a plurality of rows and columns.
A thin film transistor, a gate line commonly connecting the gates of the plurality of first thin film transistors on the row, a source line commonly connecting the sources of the plurality of first thin film transistors on the column, A second thin film transistor connected to each drain of the thin film transistor; and a capacitor connected in parallel with the second thin film transistor. A gate of the second thin film transistor is connected to a drain of the first thin film transistor. A transistor substrate connected to the drain electrode pad, and connected to the source of the second thin film transistor and one electrode of the capacitor; and a transistor substrate arranged along a plurality of rows and columns, between the pair of electrodes and the pair of electrodes. Electroluminescent group with electroluminescent body arranged in The thin film transistor substrate and the electroluminescent substrate are oriented and arranged so that the drain electrode pad and the electroluminescent body face each other, and the drain electrode pad and one of the pair of electrodes are adhered to each other by an adhesive electrode. An electroluminescent element connected through a connector. 16. The electroluminescent body,
The electroluminescent device according to claim 15, further comprising a medium that emits three primary colors of blue, green, and red. 17. The electroluminescent body,
The electro-optical device according to claim 15, further comprising an organic material medium that emits three primary colors of blue, green, and red.
Luminescent element. 18. The electroluminescent device according to claim 15, wherein the adhesive electrical connection body is formed by dispersing conductive particles in an adhesive. 19. The electroluminescent device according to claim 15, wherein said adhesive electric connection body contains conductive particles dispersed in an adhesive and a silane coupling agent. . 20. The electroluminescent device according to claim 15, wherein an adhesive electric insulator is arranged on an outer peripheral portion of the adhesive electric connection body. 21. The thin film transistor has a polysilicon semiconductor layer.
An electroluminescent device according to claim 1. 22. The electroluminescent device according to claim 15, wherein said thin film transistor comprises an amorphous silicon semiconductor or a microcrystalline silicon semiconductor. 23. The electroluminescent device according to claim 15, wherein said thin film transistor has a crystalline silicon semiconductor. 24. A thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin film transistors on the row for each row, and a plurality of thin film transistors on the column for each column. Prepare a transistor substrate having a source line commonly connected to a source, a drain electrode pad connected to each drain of the thin film transistor, and a capacitor connected in parallel with the drain electrode pad,
An electroluminescent substrate, which is disposed along a plurality of rows and columns and includes a pair of electrodes and an electroluminescent body disposed between the pair of electrodes, is provided, and a drain electrode pad of the transistor substrate and an electroluminescent substrate are provided. An adhesive electrical connection body is arranged on at least one of the sense bodies, and the thin film transistor substrate and the electroluminescence board are oriented and arranged so that the drain electrode pad and the electroluminescence body face each other, and are superposed. A method for producing an electroluminescent device, comprising: 25. The electroluminescent body,
The method for manufacturing an electroluminescent device according to claim 24, further comprising a medium emitting three primary colors of blue, green and red. 26. The electroluminescent body,
The electro-optical device according to claim 24, further comprising an organic material medium that emits three primary colors of blue, green, and red.
A method for manufacturing a luminescence element. 27. The method for manufacturing an electroluminescent device according to claim 24, wherein said adhesive electrical connection body is formed by dispersing and containing conductive particles in an adhesive. 28. The electroluminescent device according to claim 27, wherein the adhesive electric connection body contains conductive particles dispersed in an adhesive and a silane coupling agent. Manufacturing method. 29. A thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin film transistors on the row for each row, and a plurality of thin film transistors on the column for each column. A step of preparing a transistor substrate having a source line commonly connected to a source, a drain electrode pad connected to each drain of the thin film transistor, and a capacitor connected in parallel with the drain electrode pad, arranged along a plurality of rows and columns Providing a pair of electrodes and an electroluminescent substrate having an electroluminescent body disposed between the pair of electrodes, wherein at least one of a drain electrode pad and an electroluminescent body of a transistor substrate is provided. The step of arranging the adhesive electrical connection, the drain electrode pad of the transistor substrate, and the element; A step of arranging an adhesive electrical insulator on at least one of the electroluminescent body at a position to be an outer peripheral portion of the adhesive electrical connection body, and so that the drain electrode pad and the electroluminescence body face each other. And a process of aligning and arranging a thin film transistor substrate and an electroluminescence substrate, and superposing them on each other. 30. A thin film transistor arranged along a plurality of rows and columns, a gate line commonly connecting the gates of a plurality of thin film transistors on the row for each row, and a plurality of thin film transistors on the column for each column. A step of preparing a transistor substrate having a source line commonly connected to a source, a drain electrode pad connected to each drain of the thin film transistor, and a capacitor connected in parallel with the drain electrode pad, arranged along a plurality of rows and columns Preparing an electroluminescent substrate having a pair of electrodes and an electroluminescent body disposed between the pair of electrodes; bonding the electroluminescent substrate to at least one of a drain electrode pad and an electroluminescent body of the transistor substrate; Arranging conductive electrical connection body, drain electrode pad of transistor substrate, and electrode A step of arranging an adhesive electric insulator on at least one of the toro-luminescent body at a position to be an outer peripheral portion of the adhesive electric connection body, such that the drain electrode pad and the electro-luminescence body are opposed to each other; A process of aligning and arranging the thin film transistor substrate and the electro-luminescence substrate, and evacuating the thin film transistor substrate and the electro-luminescence substrate to heat and cure the adhesive electric connection body and the adhesive electrostatic insulator. Electro-process characterized by having a process
A method for manufacturing a luminescence element.