JP3466876B2 - Manufacturing method of electroluminescence device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electroluminescence device, and more particularly to a method for manufacturing an organic electroluminescence device which realizes stable light emission for a long time.

[0002]

2. Description of the Related Art As organic electroluminescence,
For example, JP-A-6-256759 and JP-A-6-1313.
Known are those disclosed in Japanese Patent No. 6360, Japanese Patent Application Laid-Open Nos. 6-188084, 6-192654, and 8-41452.

It is known that such organic electroluminescence is driven by a thin film transistor described in, for example, Japanese Patent Laid-Open No. 241048/1996.

[0004]

However, the organic electroluminescence is exposed to the atmosphere, particularly the atmosphere containing a small amount of water during the film forming process, and the emission time is greatly shortened. , This was a big obstacle to practical use.

In particular, for full color display, red,
Since three primary colors, green and blue, are required to be emitted, prepare three types of organic electroluminescent films that emit each color and adopt the photolithography process used in the manufacturing process technology of color filters. Have made certain patterned organic electroluminescent devices, but the photolithography process needs to be performed in the atmosphere, and the process is often wet. Therefore, there is a problem that the patterning by the photolithography process cannot be adopted for the organic electroluminescence substantially.

Therefore, the electroluminescence device capable of emitting light of the three primary colors on the same substrate has not been put into practical use at present.

It is an object of the present invention to provide a method for manufacturing an electroluminescence device, particularly an electroluminescence device, which solves the above-mentioned problems.

Another object of the present invention is to provide an electroluminescent device capable of forming organic electroluminescence of three primary color light emission on the same substrate, and at the same time realizing continuous stable high brightness light emission for a long time. To provide a manufacturing method.

Another object of the present invention is to form an organic electroluminescence device of three primary color emission on the same substrate, in a vacuum, in a reduced pressure space or in a dry nitrogen atmosphere, without exposing it to the atmosphere during the whole process. , And to provide a method for producing organic electroluminescence which can be carried out.

[0010]

This onset bright [Means for solving problems] The surface of the single crystal silicon substrate is made porous to form a porous silicon film, a first conductive film formed on the porous silicon film, the Forming an electroluminescent film on the first conductive film, and forming a second conductive film on the electroluminescent film;
A method for manufacturing an electroluminescence device, in which a laminate of a first conductive layer, an electroluminescent film, and a second conductive film is peeled from a single crystal silicon substrate and the laminate is provided on a first base material. Characterize.

[0011]

In the present invention, the surface of the crystalline silicon substrate is preferably uneven.

In the present invention, the porous silicon film is preferably distributed in an island shape on the crystalline silicon substrate.

In the present invention, it is preferable that the first base material is provided with a third conductive film and has a step of electrically connecting the third conductive film and the second conductive film of the laminate.

In the present invention, the step of electrically connecting is preferably performed with an adhesive conductive material.

In the present invention, the third conductive film preferably has a stripe shape.

In the present invention, the second conductive film having the fourth conductive film is provided.
It is preferable to have a step of preparing a base material and electrically connecting the fourth conductive film and the first conductive film.

In the present invention, the first base material is provided with a stripe-shaped third conductive film, the step of electrically connecting the third conductive film and the second conductive film of the laminate, and the stripe. A second base material provided with a fourth conductive film having a shape is prepared, and the fourth conductive film and the first conductive film are electrically connected to each other by crossing the stripe shape of the third conductive film. It is preferable to have a step of connecting.

The present invention preferably has a step of polishing the first conductive film after the peeling step.

In the present invention, the electroluminescence film is preferably an organic electroluminescence film.

In the present invention, it is preferable that the first conductive film serves as an anode and the second conductive film serves as a cathode .

In the present invention, the first conductive film is preferably a transparent conductive film, and the second conductive film is preferably a metal film.

In the present invention, it is preferable that the first substrate includes an active matrix driving thin film transistor circuit, and has a step of electrically connecting a drain portion of the circuit and the second conductive film.

In the present invention, the first base material includes an active matrix driving thin film transistor circuit, the step of electrically connecting the drain portion of the circuit and the second conductive film, and a conductive film to be a common electrode. It is preferable to have a step of preparing a second base material provided with and electrically connecting the conductive film and the first conductive film.

In the present invention, a step of preparing the first base material having a through hole and disposing an adhesive conductive material in the through hole,
A step of adhering the adhesive conductive material in the through hole and the second conductive film, and a second base material provided with an active matrix thin film transistor circuit are prepared, and the drain portion of the circuit and the adhesive conductive material are prepared. It is preferable to have a step of adhering.

In the present invention, a step of preparing the first base material having a through hole and disposing an adhesive conductive material in the through hole,
Step of adhering the adhesive conductive material in the through hole and the second conductive film, preparing a second base material having an active matrix thin film transistor circuit, and adhering the drain portion of the circuit and the adhesive conductive material And a third base material provided with a conductive film serving as a common electrode is prepared, and the conductive film is formed into the first conductive film.
It is preferable to have a step of electrically connecting to the conductive film.

[0027]

[0028]

In the present invention, the crystalline silicon substrate is preferably a single crystalline silicon substrate.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described with reference to Examples. Hereinafter, in the present specification, electroluminescence is referred to as “EL”.

Example 1 In the method of manufacturing an EL element according to this example, first, as shown in FIG. 1, a single crystal Si (silicon) substrate 11 having an uneven surface is anodized (anodized). Thus, the porous Si layer 12 is formed. The method of forming the porous Si layer 12 by this anodization method is well known (for example, Applied Physics Vol. 57, No. 1).
No. 1, p. 1710 (1988)), for example, the current density is 30 mA, and the anodizing solution is HF: H ₂ O: C ₂
When BR> H ₅ OH = 1: 1: 1 is used, the resulting porous layer Si12 has a thickness of 5 to 50 μm and a porosity (poros).
It) is 10 to 50%. This porous Si layer 12
From the viewpoint of repeatedly using the single crystal Si substrate 11, it is desirable to make the thickness as thin as possible in order to reduce the decrease in the thickness of the single crystal Si substrate 11 and increase the number of times it can be used. , Preferably 5-15 μm, eg about 1
It is selected to be 0 μm. Further, the single crystal Si substrate 11 is preferably p type from the viewpoint of forming the porous Si layer 12 thereon by anodization, but even if it is n type, depending on the condition settings, the porous Si layer 12 may be formed. It is possible to form 12.

The surface roughness of the single crystal Si substrate 1 is, for example, E
It suffices to correspond to the size and density of pixels when applied to L display. When applied to a color EL element, the pitch of the convex portions may be set to triple the length.

Further, the height of the convex portion is set to a value larger than the numerical value of the film thickness of the porous Si 12, preferably about 2 to 20 times.

Next, on the porous Si 12 shown in FIG.
The ITO film 21 of was formed to a thickness of 100 nm by vapor deposition.

Next, the Si substrate provided with the ITO film 21 was fixed to a substrate holder of a commercially available vapor deposition apparatus (manufactured by Nippon Vacuum Technology Co., Ltd.), and was placed in a resistance heating boat made of molybdenum.
200 mg of N'-bis (3-methylphenyl) -N, N'-diphenyl [1,1'-biphenyl] -4-4'-diamine (TPD) was put into another molybdenum boat and 4,4'- Bis (2,2'-diphenylvinyl)
200 mg of biphenyl (DPVBi) was added and the vacuum layer was decompressed to 1 × 10 ⁻⁴ Pa. Then, the above boat containing TPD is heated to 215 to 220 ° C., TPD is vapor-deposited on a Si substrate at a vapor deposition rate of 0.1 to 0.3 nm / s,
The hole injection layer 31 having a film thickness of 60 nm in FIG. 3 was formed. The substrate temperature at this time was room temperature. Without taking this out of the vacuum chamber, DPVBi was laminated and vapor-deposited as a light emitting layer 32 in a thickness of 40 nm on the hole injection layer 31 from another boat. As for the vapor deposition conditions, the boat temperature was 240 ° C., the vapor deposition rate was 0.1 to 0.3 nm / s, and the substrate temperature was room temperature. This was taken out of the vacuum chamber, a stainless steel mask was placed on the light emitting layer, and it was fixed again to the substrate holder. Next, add a tris (8-
200 mg of quinolinol) aluminum (Alq ₃ )
It was put in and attached to a vacuum chamber. Further, 1 g of magnesium ribbon was put in a resistance heating boat made of molybdenum, and 500 mg of silver wire was put in a different basket made of tungsten and vapor-deposited. After that, the pressure in the vacuum chamber was reduced to 1 × 10 ⁻⁴ Pa, and then the boat containing Alq ₃ was heated to 230 ° C. to deposit the Alq ₃ layer 33 at a deposition rate of 0.01 to 0.03 nm / s at 20 nm. did.

As a result, the hole injection layer 3 to be the EL layer 3 on the ITO film 21 to be the transparent electrode is formed on the porous Si 12.
1. A laminated body of the light emitting layer 32 and the Alq ₃ layer 33 was formed.

Further, silver was simultaneously vapor-deposited at a vapor deposition rate of 0.01 nm / s by a resistance heating method from another molybdenum boat at a vapor deposition rate of 1.4 nm / s. Under the above conditions, a mixed metal electrode of magnesium and silver was laminated and vapor-deposited on the EL layer 3 to a thickness of 150 nm.
Was used as the counter electrode 41. This device was placed in dry nitrogen at 0
Aging was performed by applying voltage from v to 10v and from 0v to -10v at 0.5v intervals for 5 seconds each.

Next, the bonded substrate stack 51 shown in FIG. 5 is held in the dry nitrogen chamber. At this time, the substrate 51 has
The stripe-shaped metal (silver, aluminum, gold, platinum, copper, etc.) electrodes 52 are arranged in advance so as to correspond to the positions of the convex portions created above, and further, on each stripe-shaped metal electrode 52, Adhesive electrical connections 53 such as a thermosetting conductive adhesive or an ultraviolet or electron beam curable conductive adhesive are arranged at the same pitch as the pitch of the above-mentioned convex portions.

The adhesive electrical connection body 53 comprises carbon particles, silver particles, copper particles, or other conductive particles dispersed in an epoxy or phenol thermosetting adhesive or an ultraviolet or electronically curable adhesive. By using a conductive adhesive and applying the screen printing method, the offset printing method, the dispenser coating method, or the like, the striped metal electrode 5
It is obtained by coating on 3 and drying.

In the above-mentioned conductive adhesive, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane and N- (2-aminoethyl) -3- are used in order to enhance the interfacial adhesion. Aminopropyltrimethoxysilane, 3
A silane coupling agent such as -aminopropyltrimethoxysilane, 3-aminopropylmethyldiethoxysilane, 3-glycidoxypropyltrimethoxysilane can be contained.

Next, the single crystal Si substrate 1 prepared in FIG.
1 is moved in from the vacuum chamber into the dry nitrogen chamber in which the above-mentioned bonded substrate 51 is set,
It was held in place in the dry nitrogen chamber.

Next, the single crystal Si substrate 11 is fixed to an arm previously attached to the dry nitrogen chamber, and the arm is moved so that the position of the arm is relative to the bonded substrate 51 prepared in FIG. The counter electrode 41 on the substrate and the adhesive electrical connector 53 on the bonded substrate 51 were moved to a position where they were opposed to each other, and then the Si substrate 11 and the bonded substrate 51 were closely adhered to each other.

Then, by the adhesive electric connecting body 53,
The two substrates 11 and 51 were bonded to each other under predetermined conditions (heat application or ultraviolet electron beam irradiation).

Next, both substrates 1 and 51 are separated so that the bonded substrates 11 and 51 are separated with the porous Si film 12 as a boundary.
A stress was applied to 1 and 51 in a direction parallel to each other. As a result, both the substrates 11 and 51 are separated from the porous Si film 12, and the laminated structure of the counter electrodes 41, EL3 and the transparent electrode ITO film 21 is provided on the adhesive electrical connection body 53 of the bonded substrate 51. Was transcribed. At this time, it is preferable that the porous Si film 12 be subjected to a pretreatment by driving a wedge before the peeling so that the peeling process can be easily performed.

Thereafter, the bonded substrate stack 51 after peeling is carried into a mechanical polishing chamber filled with dry nitrogen, where the porous Si remaining on the transparent electrode ITO film 21 after peeling is carried out.
The film was removed by a mechanical polisher with a polishing cloth attached to the pad.

Next, another opposite bonded substrate 61 shown in FIG. 6 was set in the dry nitrogen chamber. On the facing bonded substrate 61, at a position where the position of the polished transparent electrode ITO film 21 on the bonded substrate 51 after peeling faces the facing bonded substrate 61, so as to intersect the stripe longitudinal direction of the stripe-shaped metal film 52 described above. The stripe-shaped ITO film is provided in advance.

Further, an epoxy adhesive or a phenol adhesive, which serves as a sealing adhesive, is preliminarily applied around the counter bonded substrate 61 by a screen printing method or a dispenser application method.

Into this dry nitrogen chamber, the bonded substrate 61 including EL3 prepared in the above-mentioned step is carried in, and the stripe shape IT is obtained by a predetermined arm operation.
Transparent electrode IT transferred onto O film 62 and bonded substrate 51
Both plate-bonded substrates 51 and 61 so that the O film 21 faces each other.
Are superposed on each other, and the two substrates 51 and 61 are heat-pressed to each other,
It was sealed and bonded with a sealing adhesive.

When the EL device for driving a simple matrix thus prepared was driven by the driving device shown in FIGS. 7 to 10, a good moving image emitting EL display was displayed with continuous high brightness light emission for a long period of 20 days or more. Was obtained on the basis of

FIG. 8 illustrates voltage waveforms of the scan selection signal and the scan non-selection signal applied to the scan signal line and the light emission signal and the non-light emission signal applied to the information signal line in one horizontal scanning period (1H). ing. The first phase of the scan selection signal is set to the voltage 2V ₀ , and the second phase is set to the voltage 0. At this time, the first phase voltage may be a voltage of 2V ₀ or higher. The scanning non-selection signal is set to voltage 0 in the first phase and the second phase. At this time, voltage 0
DC in the forward bias direction or the reverse bias direction with respect to
Ingredients can also be added. Further, the first phase voltage may be set to ₀ and the second phase voltage may be set to 2V ₀ . At this time, the light emission signal of FIG. 7 functions as a non-light emission signal, and the non-light emission signal functions as a light emission signal.

As the light emission signal, the light emission inducing signal of the voltage -V ₀ is set in synchronization with the voltage 2V ₀ pulse of the first phase of the scanning selection signal, and the voltage 3V ₀ of the light emission threshold voltage 2V ₀ or more in the forward bias direction is set. When applied to EL, it produces a light emitting state. Further, the light emission signal in synchronization with the second phase voltage 0 of the scanning selection signal is applied a voltage V _0, the EL at this time, although the voltage -V ₀ is applied, the non-emission state .

When the non-light-emission signal is applied in synchronization with the first phase voltage and the second phase voltage of the scan selection signal, the voltage V ₀ is applied to each and the non-light-emission state occurs.

On the other hand, when the scanning non-selection signal is applied (non-selection period), the EL receives either the light emission signal or the non-light emission signal from the information signal line. An AC voltage formed by the constituent voltage V ₀ and the voltage −V ₀ will be applied.

FIG. 9 is a timing chart of the scanning selection signal, the light emitting signal and the non-light emitting signal when the light emitting state shown in FIG. 7 is generated. FIG. 10 is a timing chart of the voltage applied to the EL at each intersection at this time.
The figure shows a state in which a voltage is applied.

(Embodiment 2) Instead of the single-crystal Si substrate having the uneven surface used in the first embodiment, a smooth-surface single-crystal Si substrate is used, and the position corresponding to the concave portion is formed during the anodization for forming the porous Si film. A simple matrix driving EL device was produced in the same manner as in Example 1 except that a mask was applied to only the film, and only the position corresponding to the convex portion was anodized to form a porous film.

The device produced in this example produced continuous high-intensity light emission for more than 20 days, which was a good moving image emission EL display.

Example 3 Instead of the single crystal Si substrate used in the first example, an insulating film SiO ₂ was formed on the surface of the single crystal Si substrate.
A simple matrix driving EL device was prepared in the same manner as in Example 1 except that a substrate having a polycrystalline Si film formed thereon was used.

The device produced in this example produced a good moving picture EL display based on continuous high-luminance light emission for 20 days or longer.

(Embodiment 4) The protrusion pitch of the concavo-convex single crystal Si substrate used in Embodiment 1 is set to be three times longer, and the EL for red emission (REL), the EL for green emission (GEL) and the blue emission are emitted. By repeating the process of Example 1 three times using the respective ELs (BELs), a simple matrix driving EL device having REL, GEL, and BEL three-primary-color light-emitting ELs was prepared.

When a moving image was displayed by full-color EL emission with the device prepared in this example, continuous high-luminance display for 20 days or more was obtained.

Example 5 The same single crystal Si substrate as that shown in FIG. 4 in Example 1 was prepared, and this was loaded into the dry nitrogen chamber by mounting it on an arm. In the chamber, a bonded substrate stack 111 shown in FIG.
Is set.

This bonded substrate 111 is provided with through holes 112 at positions corresponding to the convex portions of the single crystal Si substrate. Then, a conductive paste agent 121, which serves as an adhesive electric connection body, is injected and arranged in a mountain shape in both upper and lower sides of each of the through holes 112 as shown in FIG.

This bonded substrate 111 and the single crystal S shown in FIG. 4 are arranged so that the through hole 121 and the counter electrode 41 face each other.
The i substrate was overlaid, and both substrates were pressed and heated.

Next, the bonded substrate stack 111 is peeled off from the porous Si film 12 on the single crystal Si substrate 11, and the bonded substrate stack 1
On the side of 11, transparent electrode ITO film 21, EL3 and counter electrode 4
The laminate with No. 1 was transferred.

Next, an adhesive electrical connector 131 was provided for each drain electrode pad of the TFT substrate of FIGS. 13 to 16 loaded in the same dry nitrogen chamber. This TF
The bonding substrate 111 and the TFT substrate are superposed and pressure-bonded to each other so that the adhesive electrical connection 131 on the T substrate and the conductive paste agent 121 on the lower surface 122 of the bonding substrate 111 face each other. The substrate was fixed through the adhesive electrical connection 131.

Then, the same substrate as the bonded substrate 61 shown in FIG. 6 was loaded in the same chamber.
A sealing adhesive 117 is applied to the periphery of the bonded substrate 61, and the stripe shape I on the bonded substrate 61 is applied.
The transparent electrode ITO film 2 of the laminate transferred to the upper surface 123 side of the bonded substrate 111 bonded to the TO film 62 and the TFT substrate
Both substrates were superposed and pressure-bonded and heated so as to face each other and fixedly sealed.

FIG. 13 shows an active matrix 4-terminal TFT-
The schematic of an EL element is shown. Each pixel element has two TFTs
The main feature of the 4-terminal system including the storage capacitor and the EL element is the ability to separate the addressing signal from the EL excitation signal. The EL element is selected via the logic TFT (T1) and the excitation power for the EL element is the power TFT.
It is controlled by (T2). The storage capacitor allows it to retain excitation power to the addressed EL element once selected. Thus the circuit ignores the time the EL element has been allocated for addressing 1
Allow to operate with a duty cycle close to 00%.

The gate lines Y _j and Y _{j + 1} are preferably arranged in a large number such as 640 and 1120, and gate pulses are sequentially applied. The gate pulse may be either interlaced scan or non-interlaced scan.

The source lines X _j , X _{j + 1} and X _{j + 2} are
Preferably, a large number of wirings such as 840 lines and 1280 lines are wired, and an information signal pulse having a voltage set according to the video data is applied in synchronization with the gate pulse.

In the figure, REL is a red light emitting EL, GEL is a green light emitting EL, BEL is a blue light emitting EL, and the source line X
_A red information signal pulse is applied to _j , a green information pulse is applied to X _{j + 1} , and a red information pulse is applied to X _{j + 2} . As a result, full color display is performed.

FIG. 14 is a plan view showing a typical example of the TFT substrate 141 of the present invention. The TFT1 corresponds to T1 in FIG. 13, the TFT2 corresponds to T2 in FIG. 13, and the capacitor 1
42 corresponds to Cs in FIG. 13 and corresponds to the drain electrode pad 14
Reference numeral 3 corresponds to the drain connection electrode of T ₂ for each EL in FIG.

FIG. 15 is a sectional view taken along the line AA 'in FIG. 16 is a sectional view taken along line BB ′ of FIG.

[0073] As TFT1 and TFT2 used in the present invention has a source connected to the bus 151 on the glass substrate 156 to the n ⁺ polysilicon, and a drain connected to the n ⁺ polysilicon, across the I-type polycrystalline silicon film PECVD (Plasma Enhanced CVD) 152-Si on the arranged gate insulating film
A transistor structure in which an O ₂ film 154 is arranged and the gate bus 153 is connected to n ⁺ polysilicon is adopted. Further, the passivation film 155 is formed on the drain electrode pad 14
It was arranged so as to cover all but the connection site of 3.

The present invention is not limited to the transistor structure described above, and can be applied to either a stagger structure or a coplanar structure using an amorphous silicon C microcrystalline silicon semiconductor.

Further, according to the present invention, S using crystalline silicon is used.
MOS of O1 (silicon on insulator) structure
It can be applied to a transistor.

The capacitor Cs is formed by the pair of capacitor electrodes 161 and 162 of FIG. 16 and the SiO ₂ film 154 provided between the pair of capacitor electrodes. The capacitor electrode is formed of Al or the like and is connected and wired to the ground bus, and the capacitor electrode 162 is formed of an n ⁺ polysilicon film and connected to the drain of the TFT 2.

Gate bus 153 and source bus 151
A chromium / aluminum laminated wiring is preferably used.

As the passivation 155, a silicon nitride film formed by plasma CVD is suitable.

As the drain electrode pad 143, a metal film of aluminum, silver or the like can be used in order to have a reflection performance, but a transparent conductive film such as ITO or ZnO may be used.

FIG. 17 shows a sectional view of an EL device using the TFT manufactured in this embodiment.

When the active matrix driving EL device manufactured in this example was driven for display, a moving image display based on continuous light emission of 80 candela / m ² or more for 20 days or more was realized.

The EL used in the present invention is the above-mentioned E
In addition to L, other EL, particularly organic EL is preferable, and R is particularly preferable.
The components forming EL, GEL, and BEL are arranged.

Specific REL, GEL and BEL are listed below, but the present invention is not limited to these, and an inorganic EL may be applied instead of the organic EL.

The material for the organic EL of the present invention is Scozz.
afava EPA 349, 265 (1990); Ta
ng US Pat. No. 4,356,429; VanS
Lyke et al. U.S. Pat. No. 4,539,507; V
US Patent No. 4,720,43 to anSlyke et al.
2; US Patent No. 4,769,292 to Tang et al.
U.S. Pat. No. 4,885,211 to Tang et al.
U.S. Pat. No. 4,950,95 to Perry et al.
0; US Patent No. 5,059,8 to Littman et al.
61; VanSlyke US Pat. No. 5,04
No. 7,687; U.S. Pat. No. 5,073,446 to Scozzavava et al .; U.S. Pat. No. 5,059,862 to VanSlyke et al. U.S. Pat. No. 5,061,617 to VanSlyke et al; VanSlyk
e., US Pat. No. 5,151,629; Tang et al., US Pat. No. 5,294,869; Tang et al., US Pat. No. 5,294,870). The EL layer consists of an organic hole injecting and migrating zone that contacts the anode and an electron injecting and migrating zone that forms a junction with the organic hole injecting and migrating zone. The hole injection and migration zone may be formed of a single material or multiple materials and is in contact with the anode and the continuous hole migration layer interposed between the hole injection layer and the electron injection and migration zone. Consists of. Similarly, the electron injection and transfer zone may be formed of a single material or multiple materials, and the electron injection in contact with the anode and the continuous electron transfer layer interposed between the electron injection layer and the hole injection and transfer zone. Consists of layers. Recombination and luminescence of holes and electrons occur within the electron injection and transfer zones adjacent to the junction of the electron injection and transfer and hole injection and transfer zones. The compound forming the organic EL layer is typically deposited by evaporation, but can also be deposited by other conventional techniques.

In the preferred embodiment, the organic material comprising the hole injection layer has the general formula:

[0086]

[Outer 1]

Where: Q is N or C—R M is a metal, metal oxide, or metal halide T1, T2 is hydrogen or an unsaturated six-membered ring containing a substituent such as alkyl or halogen. Meet together. Preferred alkyl moieties contain about 1 to 6 carbon atoms, while phenyl constitutes the preferred allyl moiety.

In the preferred embodiment, the hole transport layer is an aromatic tertiary amine. Preferred subclasses of aromatic tertiary amines include tetraallyldiamines having the formula:

[0089]

[Outside 2]

Here, Are is an allylene group, and n is 1
To Ar, R ₇ , R ₈ , and R ₉ are selected allyl groups, respectively. In a preferred embodiment, the luminescence, electron injection and transfer zone are metal oxinoids (o
xinoid) compounds. Preferred examples of metal oxinoid compounds have the following general formula:

[0091]

[Outside 3]

Here, R ₂ -R ₇ represent replaceability. In another preferred embodiment, the metal oxinoid compound has the formula:

[0093]

[Outside 4]

Wherein R ₂ -R ₇ are as defined above, L 1 -L 5 intensively contain 12 or fewer carbon atoms, each of which is independently a hydrogen or carbohydrate group of 1 to 12 carbon atoms. Represents L1, L2 together, or L
2, L3 may form together an associated benzo ring. In another preferred embodiment, the metal oxinoid compound has the formula:

[0095]

[Outside 5]

R ₂ -R ₆ here represent hydrogen or other substitutable. The above examples merely represent some preferred organic materials used in the electroluminescent layer. They are not intended to limit the field of view of the present invention, which is generally indicative of organic electroluminescent layers. As can be seen from the above example, the organic EL material contains a coordination compound having an organic ligand.

[0097]

According to the present invention, an EL device for driving a simple matrix and an EL device for driving an active matrix using TFTs can be continuously manufactured without being exposed to the atmosphere, whereby a long time can be obtained. It was possible to achieve continuous high-luminance emission.

According to the present invention, the organic electroluminescence of three primary color light emission can be formed on the same substrate in a vacuum, a reduced pressure space or a dry nitrogen atmosphere without exposing it to the atmosphere. It has been possible to provide an electroluminescence device that realizes continuous stable and high-luminance light emission for a long time.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a single crystal silicon substrate provided with a porous silicon film used in the present invention.

FIG. 2 is a cross-sectional view illustrating an aspect in which a transparent electrode ITO film is provided on the substrate illustrated in FIG.

FIG. 3 is a cross-sectional view showing an aspect in which an EL film is provided on the ITO film shown in FIG.

FIG. 4 is a cross-sectional view showing an aspect in which a counter electrode is laminated on the EL film shown in FIG.

FIG. 5 is a perspective view illustrating one embodiment of a bonded substrate stack.

FIG. 6 is a perspective view illustrating one embodiment of a bonded substrate used as the opposite side.

FIG. 7 is a block diagram of an EL device for a simple matrix used in the present invention.

FIG. 8 is a drive waveform diagram showing a voltage waveform for simple matrix drive used in the present invention.

9 is a timing chart voltage waveform diagram of each signal used in FIG.

FIG. 10 is a timing chart voltage waveform diagram for each pixel of the drive waveform used in FIG.

FIG. 11 is a perspective view illustrating another embodiment of the bonded substrate used in the present invention.

12 is a cross-sectional view of the bonded substrate stack illustrated in FIG.

FIG. 13: EL for active matrix used in the present invention
It is an equivalent circuit diagram of an apparatus.

FIG. 14 is a plan view of a TFT substrate used in the present invention.

15 is a cross-sectional view taken along the line AA ′ in FIG.

16 is a sectional view taken along line BB ′ of FIG.

FIG. 17 is a sectional view of an active matrix driving EL device manufactured according to the present invention.

[Explanation of symbols]

11 Single Crystal Silicon Substrate 12 Porous Silicon Film 21 Transparent Electrode ITO Film 3 EL Film 31 Hole Injection Layer 32 Light Emitting Layer 33 Alq ₃ Layer 41 Counter Electrode 51/61/111 Bonded Substrate 52 Striped Metal Film 53/131 Adhesion Electrical connection body 62 stripe-shaped ITO film 112 through hole 121 conductive paste agent 122 lower surface 123 of bonded substrate 111 upper surface 141 of bonded substrate 111 TFT substrate 142 capacitor 143 drain electrode pad 151 source bus 152 SiO ₂ film 153 gate bus 154 PECVD film 155 Passivation film 156 Glass substrate 161, 162 Capacitor electrode 171 Sealing adhesive

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akihiro Seno 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) Reference JP 5-290972 (JP, A) JP 8 -213645 (JP, A) JP-A-8-70111 (JP, A) JP-A-9-167684 (JP, A) Special Table H6-504139 (JP, A) (58) Fields investigated (Int.Cl . ⁷ , DB name) H05B 33/00-33/28

Claims (19)

(57) [Claims] 1. A surface of a crystalline silicon substrate is made porous, a porous silicon film is formed, a first conductive film is formed on the porous silicon film, and an electro film is formed on the first conductive film.
A luminescent film is formed, a second conductive film is formed on the electroluminescent film, and a laminate of the first conductive layer, the electroluminescent film, and the second conductive film is formed from a single crystal silicon substrate. A method for manufacturing an electroluminescence device, which comprises peeling and providing the laminate on a first substrate. 2. The method for manufacturing an electroluminescence device according to claim 1, wherein the surface of the crystalline silicon substrate has an uneven shape. 3. The method for manufacturing an electroluminescence device according to claim 1, wherein the porous silicon film is distributed in an island shape on a crystalline silicon substrate. 4. The electro-mechanical device according to claim 1, wherein the first base material is provided with a third conductive film, and there is a step of electrically connecting the third conductive film and the second conductive film of the laminate.・
Manufacturing method of luminescent element. 5. The method for manufacturing an electroluminescence device according to claim 4, wherein the step of electrically connecting is performed with an adhesive conductive material. 6. The method for manufacturing an electroluminescence device according to claim 4, wherein the third conductive film has a stripe shape. 7. A second base material provided with a fourth conductive film is prepared,
The method for manufacturing an electroluminescence device according to claim 1, further comprising a step of electrically connecting the fourth conductive film and the first conductive film. 8. A process for producing electroluminescence device of the fourth conductive film according to claim 7 Symbol mounting forms a stripe shape. 9. The first base material is a stripe-shaped third base material.
A conductive film is provided, a step of electrically connecting the third conductive film and the second conductive film of the laminated body, and a second base material provided with a stripe-shaped fourth conductive film are prepared. 3. The method for manufacturing an electroluminescence element according to claim 1, further comprising a step of cross-arranging with respect to the stripe shape of the conductive film of No. 3 and electrically connecting the fourth conductive film and the first conductive film. 10. The method for manufacturing an electroluminescence device according to claim 1, further comprising a step of polishing the first conductive film after the peeling step. 11. The electroluminescent film comprises:
The method for producing an electroluminescence device according to claim 1, which is an organic electroluminescence film. 12. The electro-conductive film according to claim 1, wherein the first conductive film serves as an anode , and the second conductive film serves as a cathode.
Manufacturing method of luminescent element. 13. The method of manufacturing an electroluminescence device according to claim 1, wherein the first conductive film is a transparent conductive film, and the second conductive film is a metal film. 14. The electroluminescent device according to claim 1, wherein the first base material includes an active matrix driving thin film transistor circuit, and a step of electrically connecting a drain portion of the circuit and the second conductive film is provided. Sense element manufacturing method. 15. The method for manufacturing an electroluminescence device according to claim 14, wherein the step of electrically connecting is performed by using an adhesive conductive material. 16. The first base material comprises an active matrix driving thin film transistor circuit, a step of electrically connecting a drain portion of the circuit and the second conductive film, and a conductive film to be a common electrode are provided. Prepare a second base material,
The method of manufacturing an electroluminescence device according to claim 1, further comprising a step of electrically connecting the conductive film and the first conductive film. 17. The first base material having a through hole is prepared,
A step of disposing an adhesive conductive material in the through hole, a step of adhering the adhesive conductive material in the through hole to the second conductive film, and a second base material provided with an active matrix thin film transistor circuit are prepared. 2. The method for manufacturing an electroluminescence device according to claim 1, further comprising the step of adhering the drain portion of the circuit and the adhesive conductive material. 18. A first substrate having a through hole is prepared,
A step of disposing an adhesive conductive material in the through hole, a step of adhering the adhesive conductive material in the through hole and the second conductive film, and preparing a second substrate having an active matrix thin film transistor circuit, A step of adhering the drain part of the circuit to the adhesive conductive material and a third base material provided with a conductive film to be a common electrode are prepared, and the conductive film is electrically connected to the first conductive film. The method for manufacturing an electroluminescence device according to claim 1, further comprising the step of: 19. Before Symbol crystal silicon substrate, preparation of the electroluminescence device of claim 1, wherein a single crystal silicon substrate.