JPH10321543A - Wafer support and vertical boat - Google Patents
Wafer support and vertical boatInfo
- Publication number
- JPH10321543A JPH10321543A JP12971697A JP12971697A JPH10321543A JP H10321543 A JPH10321543 A JP H10321543A JP 12971697 A JP12971697 A JP 12971697A JP 12971697 A JP12971697 A JP 12971697A JP H10321543 A JPH10321543 A JP H10321543A
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- wafer
- wafer support
- supports
- support
- silicon
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、大径のウェハの熱
処理時にもウェハとウェハ支持体との接着が起こらない
ウェハ支持体及び縦型ボートに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer support and a vertical boat in which a wafer and a wafer support do not adhere even when a large-diameter wafer is heat-treated.
【０００２】[0002]
【従来の技術】半導体製造プロセスにおいては、シリコ
ンウェハ（以下、ウェハという）に対して拡散、酸化、
ＣＶＤ等の熱処理が行われる。このような熱処理時に使
用されるボートとしては、例えば垂直配置した支柱に形
成した溝にウェハを水平に載置する縦型ボートがある。
ところが、近年においては、ウェハが８インチ径や１２
インチ径へと大径化する傾向にあり、これに伴って上記
縦型ボートは、支持部にウェハの荷重が集中したり、自
重によってウェハが反ったりして、スリップが生じ易い
といった問題が生じている。2. Description of the Related Art In a semiconductor manufacturing process, a silicon wafer (hereinafter, referred to as a wafer) is diffused, oxidized,
Heat treatment such as CVD is performed. As a boat used for such a heat treatment, for example, there is a vertical boat in which wafers are placed horizontally in grooves formed in vertically arranged columns.
However, in recent years, wafers having an 8-inch diameter or
There is a tendency for the diameter to increase to an inch diameter, and with this, the above-mentioned vertical boat causes a problem that the load of the wafer is concentrated on the support portion, the wafer is warped by its own weight, and slip is likely to occur. ing.
【０００３】そこで、大径のウェハを支持する縦型ボー
トには、ウェハを水平に載置するプレート状やリング状
のウェハ支持体を新たに有した縦型ボートが提案されて
いる（特開平５−１１４６４５、特開平６−１６３４４
０、特開平７−４５６９１、特開平７−３２６５９
３）。すなわち、この縦型ボートは、ウェハを載置する
複数枚のウェハ支持体と、これらウェハ支持体を水平に
保持する複数の支柱と、これら支柱を立設可能に固定す
る固定部とからなり、ウェハを上記ウェハ支持体の面で
広く支持することができるので、ウェハを均一に支持で
き、局所的にウェハの荷重が集中することによりウェハ
にスリップが発生したり、自重によってウェハが反った
りすることが起こりにくい。Therefore, as a vertical boat supporting a large-diameter wafer, a vertical boat newly provided with a plate-shaped or ring-shaped wafer support on which wafers are placed horizontally has been proposed (Japanese Patent Laid-Open Publication No. HEI 9-208568). 5-114645, JP-A-6-16344
0, JP-A-7-45691, JP-A-7-32659
3). That is, this vertical boat is composed of a plurality of wafer supports on which wafers are mounted, a plurality of columns for holding the wafer substrates horizontally, and a fixing portion for fixing these columns so that they can be erected, Since the wafer can be widely supported on the surface of the wafer support, the wafer can be uniformly supported, and the load on the wafer is locally concentrated, causing a slip on the wafer or warping the wafer by its own weight. Things are hard to happen.
【０００４】[0004]
【発明が解決しようとする課題】ところで、このような
プレート状やリング状のウェハ支持体を有する縦型ボー
トを用いて大径のウェハを熱処理した場合、従来の支柱
に形成された溝でウェハを水平載置していた縦型ボート
では生じなかった、ウェハ支持体とウェハとが載置面に
おいて部分的に接着するという問題が頻発してきた。こ
の接着状態でウェハをウェハ支持体から取り出そうとす
ると、取り出し機構であるハンドやツイーザにウェハ及
び縦型ボート全体の荷重がかかってハンドやツイーザを
損傷したり、また、逆にウェハにハンドやツイーザから
の不要な力がかかりウェハを損傷したりするといった不
具合が生じるのである。When a large-diameter wafer is heat-treated by using a vertical boat having such a plate-like or ring-like wafer support, the wafer is formed by grooves formed in a conventional column. This problem has not frequently occurred in a vertical boat in which the wafer is horizontally mounted, and the problem that the wafer support and the wafer partially adhere to each other on the mounting surface has frequently occurred. When trying to remove the wafer from the wafer support in this bonded state, the load of the entire wafer and vertical boat is applied to the hand or tweezer, which is the removal mechanism, and the hand or tweezer is damaged. Unnecessary force is applied to the wafer to damage the wafer.
【０００５】本発明は、上記した不具合を解消するため
になされたものであり、ウェハとウェハ支持体とが接着
することなく、また、ウェハなどに損傷を与えることの
ないウェハ支持体及び縦型ボートを提供することを目的
とする。SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and has been made in consideration of the above-described problems, and it is an object of the present invention to provide a wafer support and a vertical support that do not bond a wafer and a wafer support and do not damage a wafer. The purpose is to provide a boat.
【０００６】[0006]
【課題を解決するための手段】本発明者は、ウェハ支持
体とウェハの接着状況を調査した結果、下記のような傾
向があることが判明してきた。 接着は、ウェハ支持体とウェハとの接触面積が大きい
程起こりやすい。 接着は、酸素を含有する雰囲気での熱処理の場合に発
生する傾向がある。 ウェハ支持体の材質が、従来から用いられている熱処
理ボートの材質である石英ガラス、炭化珪素、シリコ
ン、炭化珪素とシリコンの複合体のすべてのボートで発
生する。The present inventor has investigated the state of adhesion between the wafer support and the wafer, and as a result, it has been found that the following tendency exists. Bonding is more likely to occur as the contact area between the wafer support and the wafer increases. Adhesion tends to occur during heat treatment in an oxygen-containing atmosphere. The material of the wafer support is generated in all boats of quartz glass, silicon carbide, silicon, and a composite of silicon carbide and silicon, which are the materials of the conventionally used heat treatment boat.
【０００７】さらに、ウェハ支持体とウェハの接着部を
観察した結果、次のようなことが明らかとなった。 接着部の界面にはSiO2層が存在すること。 完全に接着していない部分を観察すると、ウェハ支持
体側にもウェハ側にもSiO2層が存在すること。Further, as a result of observing the bonded portion between the wafer support and the wafer, the following has become clear. An SiO 2 layer must be present at the interface of the bonded part. Observation of the part that is not completely adhered shows that the SiO 2 layer exists on both the wafer support side and the wafer side.
【０００８】以上のことより、ウェハ支持体とウェハと
の載置面で部分的に発生する接着は、酸素含有熱処理中
に各々の表面に生成するSiO2層の間で起こる拡散が原因
であり、ウェハ支持体とウェハの接触面積が大きい場合
にその発生頻度が大きくなると推定した。As described above, the adhesion that occurs partially on the mounting surface between the wafer support and the wafer is caused by diffusion occurring between the SiO 2 layers formed on the respective surfaces during the oxygen-containing heat treatment. It is estimated that the frequency of occurrence increases when the contact area between the wafer support and the wafer is large.
【０００９】そして、従来の支柱に形成した溝で水平載
置する場合には応力集中を軽減するとの観点よりできる
だけ小さい方がよいと言われていたウェハとの接触面の
表面粗さは、拡散接合を抑制するためには大きい方がよ
いとの仮説をたて、さらに検討を重ねた結果、本発明に
至った。In the case of horizontal mounting using grooves formed in a conventional column, the surface roughness of the contact surface with the wafer, which is said to be as small as possible from the viewpoint of reducing stress concentration, is considered to be diffused. The inventors hypothesized that the larger the better, the better the bonding, and as a result of further studies, they came to the present invention.
【００１０】本発明は、ウェハの熱処理時に用いる縦型
ボートを構成するウェハ支持体の表面粗さを、Ｒａで
０．０５μｍ以上、Ｒｍａｘで５０μｍ以下とした。こ
れにより、熱処理工程においてウェハとウェハ支持体と
に形成されるSiO2層とが各々面接触することがなく、ウ
ェハとウェハ支持体とが接着しない。According to the present invention, the surface roughness of the wafer support constituting the vertical boat used in the heat treatment of the wafer is 0.05 μm or more in Ra and 50 μm or less in Rmax. As a result, the wafer and the SiO 2 layer formed on the wafer support do not come into surface contact with each other in the heat treatment step, and the wafer and the wafer support do not adhere to each other.
【００１１】[0011]
【発明の実施の形態】本発明のウェハ支持体は、少なく
とも石英ガラス、炭化珪素、シリコン、及び炭化珪素と
シリコンの複合体の１種類からなり、表面粗さがＲａで
０．０５μｍ以上、かつＲｍａｘで５０μｍ以下とした
ものである。また、本発明の縦型ボートは、ウェハを載
置する複数枚のウェハ支持体と、これらウェハ支持体を
水平に保持する複数の支柱と、これら支柱を立設可能に
固定する固定部とからなる縦型ボートに、上記に規定し
たウェハ支持体を用いたものである。BEST MODE FOR CARRYING OUT THE INVENTION The wafer support of the present invention comprises at least one of quartz glass, silicon carbide, silicon, and a composite of silicon carbide and silicon, and has a surface roughness Ra of 0.05 μm or more, and Rmax is set to 50 μm or less. Further, the vertical boat according to the present invention includes a plurality of wafer supports on which wafers are mounted, a plurality of columns for horizontally holding the wafer supports, and a fixing portion for fixing the columns in such a manner that they can be erected. A vertical boat using the wafer support defined above.
【００１２】上記したようにウェハ支持体の表面粗さを
規定する理由は、ウェハ支持体の表面粗さＲａが０．０
５μｍよりも細かい場合は、ウェハ支持体にウェハを載
置して熱処理を行うと接触面が広いので、その分強固に
ウェハとウェハ支持体とが接着してしまい、また、Ｒｍ
ａｘが５０μｍよりも粗い場合は、ウェハ支持体がウェ
ハに傷を与えてしまうからである。The reason for defining the surface roughness of the wafer support as described above is that the surface roughness Ra of the wafer support is 0.0
If the thickness is smaller than 5 μm, the wafer is placed on the wafer support and subjected to a heat treatment, so that the contact surface is wide.
If ax is coarser than 50 μm, the wafer support may damage the wafer.
【００１３】上記構成によるウェハ支持体にウェハを載
置し、熱処理を行った結果、ウェハとウェハ支持体とは
接着することがなく、また、ウェハ支持体はウェハに傷
を与えることなく熱処理は良好に行うことができた。な
お、最も良好な結果を得たのは、Ｒａが０．１μｍ以
上、かつＲｍａｘが２０μｍ以下とした場合であった。As a result of placing the wafer on the wafer support having the above structure and performing a heat treatment, the wafer and the wafer support do not adhere to each other, and the heat treatment is performed without damaging the wafer. We could do well. The best results were obtained when Ra was 0.1 μm or more and Rmax was 20 μm or less.
【００１４】[0014]
【実施例】以下に、本発明の一実施例を図１〜図５を参
照して説明する。図１は、本発明の縦型ボートを示す。
図２〜図５は、各々本発明のウェハ支持体を示す。本実
施例の縦型ボート１は、例えば炭化珪素でなり、ウェハ
２を載置する複数枚のウェハ支持体３と、これらウェハ
支持体３を水平に保持する複数の支柱４と、これら支柱
４を立設可能に固定する固定部５と、ウェハ支持体３を
支柱４に対して挿入保持するために支柱４の各々の長さ
方向同位置に形成した溝部６とからなる。そして、ウェ
ハ支持体３の平面度が例えば０．１ｍｍ、表面粗さはＲ
ａが例えば０．１μｍ、かつＲｍａｘが例えば２０μｍ
に加工されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS. FIG. 1 shows a vertical boat according to the present invention.
2 to 5 each show a wafer support of the present invention. The vertical boat 1 of the present embodiment is made of, for example, silicon carbide, and has a plurality of wafer supports 3 on which wafers 2 are placed, a plurality of columns 4 for holding the wafer supports 3 horizontally, and a plurality of columns 4. And a groove 6 formed at the same position in the longitudinal direction of each of the columns 4 to insert and hold the wafer support 3 with respect to the columns 4. The flatness of the wafer support 3 is, for example, 0.1 mm, and the surface roughness is R.
a is, for example, 0.1 μm, and Rmax is, for example, 20 μm
Has been processed.
【００１５】また、ウェハ支持体３の形状としては、図
１に示すような単純な円形プレートとしてもよいが、例
えば図２〜図５に示すように、ウェハ２をウェハ支持体
３から取り出す際に使用するハンド又はツイーザが挿入
可能なスペースを形成した形状であってもよい。すなわ
ち、図２にはＣ型に形成されたウェハ支持体３を、図３
には所定幅を有した半円弧状のウェハ支持体３ａ，３ｂ
でなるウェハ支持体３を、図４にはハンド又はツイーザ
の挿入スペースのみを切り欠き、その切り欠き部分を円
弧状に形成したウェハ支持体３を、図５には図４の切り
欠き部分を円弧状に形成していないウェハ支持体３を各
々示している。The shape of the wafer support 3 may be a simple circular plate as shown in FIG. 1, but when the wafer 2 is taken out from the wafer support 3 as shown in FIGS. The shape may be such that a hand or a tweezer used for forming a space is formed therein. That is, FIG. 2 shows the wafer support 3 formed in a C-shape in FIG.
Have semicircular wafer supports 3a, 3b having a predetermined width.
FIG. 4 shows a wafer support 3 in which only a hand or a tweezer insertion space is cut out, and the cut-out portion is formed in an arc shape, and FIG. 5 shows a cut-out portion in FIG. Each of the wafer supports 3 not formed in an arc shape is shown.
【００１６】上記構成において、炭化珪素（SiC ）でな
るウェハ支持体３上にウェハ２（Si）を載置して酸素含
有雰囲気下で熱処理を行うと、図１（ｂ）に示すよう
に、ウェハ２とウェハ支持体３の表面にSiO2層７が発生
し、それによって、ウェハ２とウェハ支持体３とは互い
に拡散接合しようとするが、本実施例では、ウェハ支持
体３の中心線上における平均表面粗さＲａが０．１μ
ｍ、かつ最大表面高さＲｍａｘが２０μｍとしているの
で、SiO2層７同士の接触面積が小さく、ウェハ２とウェ
ハ支持体３とが接着しない。In the above configuration, when the wafer 2 (Si) is placed on the wafer support 3 made of silicon carbide (SiC) and subjected to a heat treatment in an oxygen-containing atmosphere, as shown in FIG. An SiO 2 layer 7 is generated on the surfaces of the wafer 2 and the wafer support 3, and thereby, the wafer 2 and the wafer support 3 try to diffusely bond to each other. Average surface roughness Ra is 0.1 μm
m, and the maximum surface height Rmax is 20 μm, the contact area between the SiO 2 layers 7 is small, and the wafer 2 and the wafer support 3 do not adhere to each other.
【００１７】次に、本発明の効果を確認するために行っ
た以下の４つの試験について説明する。実施例Ａ、実施
例Ｂは、本発明の表面粗さの規定範囲内におけるウェハ
支持体３を採用してウェハ２の熱処理を行った結果であ
る。比較例Ａ、比較例Ｂは、本発明の表面粗さの規定範
囲外におけるウェハ支持体を採用してウェハの熱処理を
行った結果である。Next, the following four tests performed to confirm the effects of the present invention will be described. Examples A and B are the results of heat treatment of the wafer 2 using the wafer support 3 within the specified range of the surface roughness of the present invention. Comparative Example A and Comparative Example B are results of heat treatment of a wafer using a wafer support having a surface roughness outside the specified range of the present invention.
【００１８】（実施例Ａ）３５vol%のシリコンと６５vo
l%炭化珪素の複合体（以下、Si+SiCと記す）よりなり、
その形状を外径３１０ｍｍ、内径２００ｍｍ、厚さ２ｍ
ｍの上記図２に示したＣ型とし、その表面をレジン砥石
＃１４０で平面研削し、平面度が０．１ｍｍ以下で表面
粗さがＲａ０．１２μｍ、Ｒｍａｘ１．３２μｍのウェ
ハ支持体を作成した。なお、ウェハ支持体の内径側では
エッジ部でウェハに傷をつけないように面取り加工を施
した。そして、このウェハ支持体に１２インチウェハを
載置し、拡散炉に入れて酸素雰囲気下で毎分２℃で昇温
し、１２００℃で２時間熱処理を行い、毎分２℃で降温
した後、ウェハ支持体３からウェハを取り出したとこ
ろ、ウェハとウェハ支持体の表面には接着が見られず容
易に取り出すことができ、また、スリップも発生しなか
った。(Example A) 35 vol% of silicon and 65 vo
l% silicon carbide composite (hereinafter referred to as Si + SiC)
Its shape is 310mm outside diameter, 200mm inside diameter, 2m thickness
m of the C type shown in FIG. 2 above, and the surface thereof was ground with a resin grindstone # 140 to prepare a wafer support having a flatness of 0.1 mm or less, a surface roughness of Ra 0.12 μm, and a Rmax of 1.32 μm. . Note that chamfering was performed on the inner diameter side of the wafer support so as not to damage the wafer at the edge. Then, a 12-inch wafer is placed on this wafer support, placed in a diffusion furnace, heated at 2 ° C./min in an oxygen atmosphere, heat-treated at 1200 ° C. for 2 hours, and cooled at 2 ° C./min. When the wafer was taken out of the wafer support 3, no adhesion was observed between the wafer and the surface of the wafer support, so that the wafer could be easily taken out, and no slip occurred.
【００１９】（実施例Ｂ）上記実施例Ａと同様の素材及
び形状で、その表面をサンドブラスト加工し、平面度が
０．１ｍｍ以下で、表面粗さがＲａ１．４１μｍ、Ｒｍ
ａｘ１６．６８μｍのウェハ支持体を作成した。そし
て、このウェハ支持体に１２インチウェハを載置し、上
記と同様の処理を施したところ、ウェハとウェハ支持体
の表面には接着が見られず容易に取り出すことができ、
また、スリップも発生しなかった。(Example B) The same material and shape as in Example A were used, and the surface was sandblasted to have a flatness of 0.1 mm or less, a surface roughness Ra of 1.41 μm, and a surface roughness of Rm.
An ax16.68 μm wafer support was made. Then, a 12-inch wafer is placed on the wafer support and subjected to the same processing as described above. As a result, no adhesion is observed on the surfaces of the wafer and the wafer support, and the wafer can be easily taken out.
Also, no slip occurred.
【００２０】（比較例Ａ）Si+SiCよりなり、その形状を
外径が３１０ｍｍ、厚さ２ｍｍの円盤状とし、その表面
を平面研削後、研磨し、平面度が０．１ｍｍ以下で、表
面粗さがＲａ０．０１５μｍ、Ｒｍａｘ０．１２μｍの
ウェハ支持体を作成した。このウェハ支持体に１２イン
チウェハを載置し、上記と同様の処理を施したところ、
ウェハとウェハ支持体は接着してしまった。(Comparative Example A) A disk made of Si + SiC having an outer diameter of 310 mm and a thickness of 2 mm was formed. The surface was ground and polished, and the flatness was 0.1 mm or less. A wafer support having a roughness Ra of 0.015 μm and an Rmax of 0.12 μm was prepared. When a 12-inch wafer was placed on this wafer support and subjected to the same processing as above,
The wafer and wafer support have adhered.
【００２１】（比較例Ｂ）Si+SiCよりなり、その形状を
外径が３１０ｍｍ、内径が２９０ｍｍ、厚さ２ｍｍの上
記図２に示したＣ型とし、その表面をサンドブラスト加
工し、平面度が０．１ｍｍ以下で、表面粗さがＲａ８．
６４μｍ、Ｒｍａｘ６７．２μｍのウェハ支持体を作成
した。このウェハ支持体に１２インチウェハを載置し、
上記と同様の処理を施したところ、ウェハのウェハ支持
体との接触部には傷が付いており、スリップが発生し
た。(Comparative Example B) The C type shown in FIG. 2 was formed of Si + SiC having an outer diameter of 310 mm, an inner diameter of 290 mm, and a thickness of 2 mm, and the surface was sandblasted to obtain a flatness. 0.1 mm or less, and the surface roughness is Ra8.
A wafer support of 64 μm, Rmax 67.2 μm was made. Place a 12 inch wafer on this wafer support,
When the same treatment as above was performed, the contact portion of the wafer with the wafer support was scratched and slip occurred.
【００２２】このように、本発明は、上記実施例Ａ，Ｂ
と比較例Ａ，Ｂとで示したように、ウェハ支持体３の表
面粗さをＲａで０．０５μｍ以上、Ｒｍａｘで５０μｍ
以下と規定することにより、ウェハ２とウェハ支持体３
とは、接着することがなく、また、ウェハ支持体３の表
面によってウェハ２に傷を与えることがなく、従来のよ
うな不具合が発生することなく、良好に大径のウェハ２
の熱処理を行うことができる。As described above, the present invention relates to the above embodiments A and B
And Comparative Examples A and B, the surface roughness of the wafer support 3 was 0.05 μm or more in Ra and 50 μm in Rmax.
By defining as follows, the wafer 2 and the wafer support 3
Means that the large-diameter wafer 2 can be satisfactorily formed without adhering, without damaging the wafer 2 due to the surface of the wafer support 3, and without causing problems as in the prior art.
Heat treatment can be performed.
【００２３】なお、上記した本発明は、実施例Ａ又は実
施例Ｂなどで作成したウェハ支持体の表面にＣＶＤ法に
てSiC を例えば１００μｍ程度被覆したものに適用して
もよい。さらに、本発明は、上記した炭化珪素、Si+SiC
の他、ウェハ支持体３の材質として、石英ガラス、シリ
コンなどで作成してもよく、外形の寸法及び形状につい
ても、その趣旨を逸脱しない条件での変形は可能であ
り、そのように変形した場合においても上記と同様の作
用効果を得ることができる。The present invention described above may be applied to a wafer support prepared in Example A or Example B or the like in which the surface is coated with, for example, about 100 μm of SiC by the CVD method. Further, the present invention relates to the above silicon carbide, Si + SiC
In addition, the material of the wafer support 3 may be made of quartz glass, silicon, or the like, and the dimensions and shape of the outer shape may be changed without departing from the spirit thereof. In this case, the same operation and effect as described above can be obtained.
【００２４】[0024]
【発明の効果】以上のように、本発明は、少なくとも石
英ガラス、炭化珪素、シリコン、炭化珪素とシリコンの
複合体のいずれか１種類でウェハ支持体を作成し、ウェ
ハ支持体の表面粗さをＲａで０．０５μｍ以上、かつＲ
ｍａｘで５０μｍ以下としたので、ウェハを載置した状
態で熱処理を施した際に、化学反応によってSiO2層がウ
ェハとウェハ支持体との間に介在しても、ウェハとウェ
ハ支持体が接着することがなく、また、ウェハに傷を付
けてスリップが発生することがない。As described above, according to the present invention, a wafer support is made of at least one of quartz glass, silicon carbide, silicon, and a composite of silicon carbide and silicon, and the surface roughness of the wafer support is made. Is 0.05 μm or more in Ra and R
Since the maximum value is set to 50 μm or less, even if the SiO 2 layer is interposed between the wafer and the wafer support due to a chemical reaction when the heat treatment is performed while the wafer is mounted, the wafer and the wafer support are bonded. And no slip is caused by scratching the wafer.
【図１】本発明の縦型ボートであり、（ａ）は全体を示
す斜視図、（ｂ）はウェハとウェハ支持体との接触部分
を示す拡大断面図である。FIG. 1 is a vertical boat according to the present invention, in which (a) is a perspective view showing the whole, and (b) is an enlarged sectional view showing a contact portion between a wafer and a wafer support.
【図２】本発明のウェハ支持体の形状の一例を示す図で
ある。FIG. 2 is a view showing an example of the shape of a wafer support of the present invention.
【図３】本発明のウェハ支持体の形状の一例を示す図で
ある。FIG. 3 is a view showing an example of the shape of a wafer support of the present invention.
【図４】本発明のウェハ支持体の形状の一例を示す図で
ある。FIG. 4 is a diagram showing an example of the shape of a wafer support of the present invention.
【図５】本発明のウェハ支持体の形状の一例を示す図で
ある。FIG. 5 is a diagram showing an example of the shape of a wafer support of the present invention.
１ 縦型ボート ２ ウェハ ３ ウェハ支持体 ４ 支柱 ５ 固定部 ６ 溝部 ７ SiO2層DESCRIPTION OF SYMBOLS 1 Vertical boat 2 Wafer 3 Wafer support 4 Post 5 Fixing part 6 Groove part 7 SiO 2 layer
Claims (2)
構成するウェハ支持体であって、少なくとも石英ガラ
ス、炭化珪素、シリコン、及び炭化珪素とシリコンの複
合体の１種類からなり、表面粗さがＲａで０．０５μｍ
以上、かつＲｍａｘで５０μｍ以下であることを特徴と
するウェハ支持体。1. A wafer support constituting a vertical boat used for heat treatment of a wafer, comprising at least one of quartz glass, silicon carbide, silicon, and a composite of silicon carbide and silicon, and having a surface roughness of at least one. 0.05μm in Ra
A wafer support having a Rmax of 50 μm or less.
と、これらウェハ支持体を水平に保持する複数の支柱
と、これら支柱を立設可能に固定する固定部とからなる
縦型ボートにおいて、前記ウェハ支持体が請求項１記載
のウェハ支持体であることを特徴とする縦型ボート。2. A vertical boat comprising: a plurality of wafer supports on which wafers are placed; a plurality of columns for horizontally holding the wafer supports; and a fixing portion for fixing the columns so that the columns can be erected. A vertical boat, wherein the wafer support is the wafer support according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12971697A JPH10321543A (en) | 1997-05-20 | 1997-05-20 | Wafer support and vertical boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12971697A JPH10321543A (en) | 1997-05-20 | 1997-05-20 | Wafer support and vertical boat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10321543A true JPH10321543A (en) | 1998-12-04 |
Family
ID=15016450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12971697A Pending JPH10321543A (en) | 1997-05-20 | 1997-05-20 | Wafer support and vertical boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10321543A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999044222A1 (en) * | 1998-02-27 | 1999-09-02 | Saint-Gobain Industrial Ceramics, Inc. | Slip free vertical rack design having rounded horizontal arms |
| JP2000269150A (en) * | 1999-03-19 | 2000-09-29 | Toshiba Ceramics Co Ltd | Semiconductor wafer heating tool and semiconductor wafer heater using the same |
| JP2002047034A (en) * | 2000-07-31 | 2002-02-12 | Shinetsu Quartz Prod Co Ltd | Quarts glass jig for process device utilizing plasma |
| JP2002141397A (en) * | 2000-10-31 | 2002-05-17 | Yamagata Shinetsu Sekiei:Kk | Wafer supporting device made of silica glass and method for manufacturing the same |
| WO2002095807A2 (en) * | 2001-05-18 | 2002-11-28 | Integrated Materials, Inc. | Silicon fixtures useful for high temperature wafer processing |
| JP2003059851A (en) * | 2001-08-17 | 2003-02-28 | Asahi Glass Co Ltd | Wafer support body and boat for heat treatment using the same |
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| KR100465389B1 (en) * | 2001-03-22 | 2005-01-13 | 니뽄 가이시 가부시키가이샤 | SiC-BASED JIG FOR HEAT TREATMENT |
| WO2005045917A1 (en) * | 2003-11-07 | 2005-05-19 | Sumco Corporation | Jig for heat treating semiconductor substrate and method for heat treating semiconductor substrate |
| JP2005203648A (en) * | 2004-01-19 | 2005-07-28 | Shin Etsu Handotai Co Ltd | Vertical type boat for heat treating silicon wafer and heat treating method |
| JP2006005274A (en) * | 2004-06-21 | 2006-01-05 | Sumco Corp | Heat treatment jig semiconductor silicon substrate |
| JP2006086534A (en) * | 2004-09-17 | 2006-03-30 | Asm Internatl Nv | Rough side susceptor for high-temperature substrate processing |
| US7077913B2 (en) * | 2002-01-17 | 2006-07-18 | Hitachi Kokusai Electric, Inc. | Apparatus for fabricating a semiconductor device |
| US7108746B2 (en) | 2001-05-18 | 2006-09-19 | Integrated Materials, Inc. | Silicon fixture with roughened surface supporting wafers in chemical vapor deposition |
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1997
- 1997-05-20 JP JP12971697A patent/JPH10321543A/en active Pending
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|---|---|---|---|---|
| WO1999044222A1 (en) * | 1998-02-27 | 1999-09-02 | Saint-Gobain Industrial Ceramics, Inc. | Slip free vertical rack design having rounded horizontal arms |
| JP2000269150A (en) * | 1999-03-19 | 2000-09-29 | Toshiba Ceramics Co Ltd | Semiconductor wafer heating tool and semiconductor wafer heater using the same |
| JP2002047034A (en) * | 2000-07-31 | 2002-02-12 | Shinetsu Quartz Prod Co Ltd | Quarts glass jig for process device utilizing plasma |
| JP2002141397A (en) * | 2000-10-31 | 2002-05-17 | Yamagata Shinetsu Sekiei:Kk | Wafer supporting device made of silica glass and method for manufacturing the same |
| JP4526683B2 (en) * | 2000-10-31 | 2010-08-18 | 株式会社山形信越石英 | Quartz glass wafer support jig and manufacturing method thereof |
| KR100465389B1 (en) * | 2001-03-22 | 2005-01-13 | 니뽄 가이시 가부시키가이샤 | SiC-BASED JIG FOR HEAT TREATMENT |
| WO2002095807A2 (en) * | 2001-05-18 | 2002-11-28 | Integrated Materials, Inc. | Silicon fixtures useful for high temperature wafer processing |
| WO2002095807A3 (en) * | 2001-05-18 | 2003-10-16 | Integrated Materials Inc | Silicon fixtures useful for high temperature wafer processing |
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| JP2003059851A (en) * | 2001-08-17 | 2003-02-28 | Asahi Glass Co Ltd | Wafer support body and boat for heat treatment using the same |
| US7077913B2 (en) * | 2002-01-17 | 2006-07-18 | Hitachi Kokusai Electric, Inc. | Apparatus for fabricating a semiconductor device |
| WO2004090967A1 (en) * | 2003-04-02 | 2004-10-21 | Sumco Corporation | Semiconductor wafer heat treating jig |
| US7331780B2 (en) | 2003-04-02 | 2008-02-19 | Sumco Corporation | Heat treatment jig for semiconductor wafer |
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| JP4622859B2 (en) * | 2003-11-07 | 2011-02-02 | 株式会社Ｓｕｍｃｏ | Heat treatment jig for semiconductor substrate and method for heat treatment of semiconductor substrate |
| WO2005045917A1 (en) * | 2003-11-07 | 2005-05-19 | Sumco Corporation | Jig for heat treating semiconductor substrate and method for heat treating semiconductor substrate |
| KR100816180B1 (en) | 2003-11-07 | 2008-03-21 | 가부시키가이샤 섬코 | Jig for heat treating semiconductor substrate and method for heat treating semiconductor substrate |
| JPWO2005045917A1 (en) * | 2003-11-07 | 2007-05-24 | 株式会社Sumco | Heat treatment jig for semiconductor substrate and method for heat treatment of semiconductor substrate |
| JP2005203648A (en) * | 2004-01-19 | 2005-07-28 | Shin Etsu Handotai Co Ltd | Vertical type boat for heat treating silicon wafer and heat treating method |
| EP1780774A1 (en) * | 2004-06-21 | 2007-05-02 | SUMCO Corporation | Heat treatment jig for semiconductor silicon substrate |
| EP1780774A4 (en) * | 2004-06-21 | 2009-12-09 | Sumco Corp | Heat treatment jig for semiconductor silicon substrate |
| JP4534619B2 (en) * | 2004-06-21 | 2010-09-01 | 株式会社Ｓｕｍｃｏ | Heat treatment jig for semiconductor silicon substrate |
| JP2006005274A (en) * | 2004-06-21 | 2006-01-05 | Sumco Corp | Heat treatment jig semiconductor silicon substrate |
| JP2006086534A (en) * | 2004-09-17 | 2006-03-30 | Asm Internatl Nv | Rough side susceptor for high-temperature substrate processing |
| KR100657502B1 (en) | 2005-04-25 | 2006-12-20 | 주식회사 테라세미콘 | Wafer-Holder Manufaturing Method and Wafer-Holder-Boat for Semiconductor |
| US7713355B2 (en) | 2005-05-03 | 2010-05-11 | Integrated Materials, Incorporated | Silicon shelf towers |
| KR20170083188A (en) * | 2016-01-07 | 2017-07-18 | 삼성전자주식회사 | Wafer boat and semiconductor fabricating apparatus including the same |
| CN112635370A (en) * | 2021-03-10 | 2021-04-09 | 北京凯德石英股份有限公司 | Point contact quartz boat |
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