JPH05175319A - Wafer supporting silicon boat - Google Patents
Wafer supporting silicon boatInfo
- Publication number
- JPH05175319A JPH05175319A JP3340799A JP34079991A JPH05175319A JP H05175319 A JPH05175319 A JP H05175319A JP 3340799 A JP3340799 A JP 3340799A JP 34079991 A JP34079991 A JP 34079991A JP H05175319 A JPH05175319 A JP H05175319A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- holding
- holding rod
- wafer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、特に半導体ウェハを熱
処理する炉内で支持する際に用いられるシリコン製ウエ
ハ支持ボ−トに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon wafer support boat used for supporting a semiconductor wafer in a furnace for heat treatment.
【０００２】[0002]
【従来の技術】周知の如く、ウエハ支持ボ−トは、高純
度，高耐熱性を有することが要求される。前記ウエハボ
−トの材質としては、例えばＳｉ，石英ガラス，Ｓｉ含
浸ＳｉＣが挙げられる。ここで、特にＳｉは、他の素材
よりも高純度であるので広く使用されている。しかし、
Ｓｉは脆い性質を有するため、複雑な機械加工が困難
で、例えば特開昭６０−１０７８４３号公報に示すよう
に組立式のボ−トになっている。つまり、このボ−ト
は、２個の端板、複数の保持ロッド及び案内ロッドから
なるもので、各部材の材質として石英やシリコンを用い
た構成となっている。As is well known, a wafer supporting boat is required to have high purity and high heat resistance. Examples of the material of the wafer boat include Si, quartz glass, and Si-impregnated SiC. In particular, Si is widely used because it has a higher purity than other materials. But,
Since Si has a brittle property, it is difficult to perform complicated machining. For example, as shown in JP-A-60-107843, it is an assembly type boat. That is, this boat is composed of two end plates, a plurality of holding rods and a guide rod, and is made of quartz or silicon as the material of each member.
【０００３】[0003]
【発明が解決しようとする課題】ところで、最近ウエハ
の大型化及び縦型熱処理炉の普及によって、ウエハボ−
トの寸法精度に対する要求が厳しくなっており、上記の
ような組立式のボ−トは構造上要求を満たすことは困難
である。また、組立式のボ−トは、部品と部品の接合部
に不純物が付着し易く、洗浄しても落ちにくく、歩留り
低下の原因となっている。By the way, due to the recent increase in the size of wafers and the spread of vertical heat treatment furnaces, wafer wafer
The demands on the dimensional accuracy of the ports are becoming strict, and it is difficult for the above-mentioned assembly type boats to meet the structural requirements. Further, in the assembly type boat, impurities are apt to adhere to the joints between parts and are hard to be removed even after cleaning, which causes a decrease in yield.
【０００４】本発明は上記事情に鑑みてなされたもの
で、従来に比べて寸法精度を大幅に向上できるととも
に、不純物が部品間に付着しにくく、かつ不純物が付着
しても容易に除去でき、更に繰り返し使用しても歩留り
の低下を抑制しえるシリコン製ウエハ支持ボ−トを提供
することを目的とする。The present invention has been made in view of the above circumstances. The dimensional accuracy can be greatly improved as compared with the prior art, and impurities are less likely to adhere between parts, and even if impurities adhere, they can be easily removed. Further, it is an object of the present invention to provide a silicon wafer support boat capable of suppressing a decrease in yield even after repeated use.
【０００５】[0005]
【課題を解決するための手段】本発明は、半導体ウエハ
を保持する複数の保持部を有する保持ロッドと、これを
固定するための少なくとも２つ固定板とを具備し、少な
くとも前記保持ロッドと固定板との接合部の露出部分に
シリコン膜を形成したことを特徴とするシリコン製ウエ
ハ支持ボ−トである。The present invention comprises a holding rod having a plurality of holding portions for holding a semiconductor wafer, and at least two fixing plates for fixing the holding portion, and at least the holding rod is fixed. A silicon wafer support boat characterized in that a silicon film is formed on an exposed portion of a joint portion with a plate.
【０００６】本発明において、シリコン膜の厚みは２０
〜３００μｍの範囲が好ましい。ここで、厚みが２０μ
ｍ以下だと接着効果が表れにくく、また衝撃等により膜
にクラックが入りパ−ティクル発生の原因となる。ま
た、厚みが３００μｍを越えると、コスト的に製品とし
て成立しない。本発明において、シリコン製ウエハ支持
ボ−トの材質としては、例えば多結晶シリコン、単結晶
シリコンが挙げられる。In the present invention, the silicon film has a thickness of 20.
The range of ˜300 μm is preferable. Here, the thickness is 20μ
If it is less than m, the adhesive effect is hard to appear, and the film is cracked by impact or the like, which causes the generation of particles. Further, if the thickness exceeds 300 μm, the product cannot be realized in terms of cost. In the present invention, examples of the material of the silicon wafer support boat include polycrystalline silicon and single crystal silicon.
【０００７】[0007]
【作用】本発明においては、少なくともボ−トを構成す
る各部品間の接合部の露出面にシリコン膜を被覆するこ
とにより、従来と比べて部品間の隙間が実質存在しなく
なる。従って、ボ−トの接合部が固定され、ウエハ処理
用ガスから生成する不純物は隙間にもはいることなく、
容易に除去することができる。In the present invention, at least the exposed surfaces of the joints between the parts constituting the boat are covered with the silicon film, so that there is substantially no gap between the parts as compared with the conventional case. Therefore, the joint portion of the boat is fixed, and the impurities generated from the wafer processing gas do not enter the gap,
It can be easily removed.
【０００８】[0008]
【実施例】以下、本発明の一実施例について図１（Ａ）
〜（Ｄ）を参照して説明する。但し、図１（Ａ）はこの
実施例に係る縦型ボ−トの全体図、図１（Ｂ）は図１
（Ａ）の略平面図、図１（Ｃ）は図１（Ａ）のボ−トに
用いられる保持ロッドの説明図、図１（Ｄ）は図１
（Ａ）の要部の拡大図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.
This will be described with reference to (D). However, FIG. 1A is an overall view of a vertical boat according to this embodiment, and FIG.
1A is a schematic plan view, FIG. 1C is an explanatory view of a holding rod used in the boat of FIG. 1A, and FIG. 1D is FIG.
It is an enlarged view of the principal part of (A).
【０００９】図中の１ａ，１ｂは、互いに平行に配置さ
れた円形の固定板である。これらの固定板には、夫々例
えば４本の保持ロッド２の両端部を装着するための開口
部３が平板の外周部に沿って設けられている。前記保持
ロッド２は、ＣＺ法により形成された単結晶シリコンか
らなる。Reference numerals 1a and 1b in the drawing denote circular fixing plates arranged in parallel with each other. Each of these fixing plates is provided with an opening 3 along which the ends of the four holding rods 2 are mounted along the outer periphery of the flat plate. The holding rod 2 is made of single crystal silicon formed by the CZ method.
【００１０】保持ロッド２の両端には、該ロッドをコ字
型の止めピン４を用いて前記固定板に固定するための環
状の溝５が設けられている。前記保持ロッド２の長手方
向には、夫々等間隔で半導体ウエハ６の周縁部を係止す
る保持溝７が設けられている。前記固定板１ａ，１ｂと
保持ロッド２の接合部の露出面、保持ロッド２と止めピ
ン４の接合部の露出面及び他の露出面には、厚さ１００
μｍのＣＶＤ−Ｓｉ（シリコン）膜９が被覆されてい
る。ここで、前記シリコン膜９は、ＳｉＨ4 ：０．０５
リットル／min 、Ｈ2 ：１０．０リットル／min 、温
度：１０００℃、膜厚成長速度０．５μｍ／min の条件
でＣＶＤ法により形成した。 （比較例１，２）At both ends of the holding rod 2, there are provided annular grooves 5 for fixing the rod to the fixing plate by using U-shaped stop pins 4. In the longitudinal direction of the holding rod 2, holding grooves 7 for locking the peripheral portion of the semiconductor wafer 6 are provided at equal intervals. The exposed surface of the joint between the fixing plates 1a and 1b and the holding rod 2, the exposed surface of the joint between the holding rod 2 and the stop pin 4 and the other exposed surface have a thickness of 100.
A μm CVD-Si (silicon) film 9 is coated. Here, the silicon film 9 is formed of SiH 4 : 0.05.
It was formed by the CVD method under the conditions of liter / min, H 2 : 10.0 liter / min, temperature: 1000 ° C., and film thickness growth rate 0.5 μm / min. (Comparative examples 1 and 2)
【００１１】実施例のボ−トに比べて、シリコン膜を形
成しない点を除いて同一構造である。但し、比較例２に
係るボ−トは部品間の接合部を除きＣＶＤ膜厚分の加工
シロを予め設けている。Compared with the boat of the embodiment, it has the same structure except that a silicon film is not formed. However, the boat according to the comparative example 2 is preliminarily provided with a processing blank for the CVD film thickness except for the joint portion between the components.
【００１２】しかして、上記実施例に係るシリコン製ウ
エハ支持ボ−トによれば、固定板１ａ，１ｂ、保持ロッ
ド２及び止めピン４の露出面のみならず、これらの部品
間の接合部の露出面にもシリコン膜８を被覆することに
より、部品間の隙間をほとんどなくすことができる。従
って、ボ−トの接合部が固定され、ウエハ処理用ガスか
ら生成する不純物は隙間にもはいることなく、容易に除
去することができる。その結果、繰り返して使用しても
歩留りの低下を回避できる。事実、上記実施例、及び比
較例１，２に係るボ−トについて各種の試験を行ったと
ころ、次に述べる結果を得た。However, according to the silicon wafer support boat according to the above embodiment, not only the exposed surfaces of the fixing plates 1a and 1b, the holding rod 2 and the retaining pin 4 but also the joint portion between these parts are secured. By covering the exposed surface with the silicon film 8, it is possible to almost eliminate the gap between the components. Therefore, the bonding portion of the boat is fixed, and the impurities generated from the wafer processing gas can be easily removed without entering the gap. As a result, it is possible to avoid a decrease in yield even after repeated use. In fact, various tests were conducted on the boats according to the above-mentioned Examples and Comparative Examples 1 and 2, and the following results were obtained.
【００１３】(1) 上記実施例、及び比較例１，２に係る
ボ−トについてウエハロ−ダ−によるＳｉウエハ積載の
繰り返し試験を行った。その結果、実施例のボ−トは、
１０００回以上の繰り返し試験を行なっても問題が生じ
なかった。これは、表面にシリコン膜を被覆した結果、
各部品間の接合部の密着性が向上し、ボ−トの形状に変
化がみられなかったためである。しかし、比較例１，２
のボ−トについては、１０００回を越えた時点において
組立部にズレが生じはじめ、１２００回以降はウエハの
積載が不可能になった。(1) With respect to the boats of the above Examples and Comparative Examples 1 and 2, repeated tests of Si wafer loading by a wafer loader were conducted. As a result, the boat of the embodiment is
No problem occurred even after repeating the test 1000 times or more. As a result of coating the surface with a silicon film,
This is because the adhesion of the joints between the parts was improved and the shape of the boat did not change. However, Comparative Examples 1 and 2
With respect to the above-mentioned boats, the dislocation started to occur in the assembling section after 1000 times, and after 1200 times, the loading of wafers became impossible.
【００１４】(2) 比較例１，２のボ−トを鉛直方向に立
てた場合、各部品間の接合部の加工精度の問題から、垂
線±２ｍｍ程度のズレが生じる。そこで、組み立てたボ
−トを横置きにセットし、鉛直方向のズレを修正した
後、ＣＶＤ法によりシリコン膜を形成して実施例１に係
るボ−トを得た。そこで、このボ−トを鉛直方向に立て
て垂線からのズレを測定した結果、±０．５ｍｍ以下の
ばらつきに納まり寸法精度の向上が認められた。(2) When the boats of Comparative Examples 1 and 2 are erected in the vertical direction, a vertical line deviation of about ± 2 mm occurs due to the problem of the processing accuracy of the joint between each component. Therefore, the assembled boat was set in a horizontal position, the vertical displacement was corrected, and then a silicon film was formed by the CVD method to obtain the boat according to the first embodiment. Then, as a result of measuring the deviation from the vertical line with this boat standing in the vertical direction, it was confirmed that the deviation was within ± 0.5 mm and the dimensional accuracy was improved.
【００１５】(3) 上記実施例、及び比較例１，２に係る
ボ−トをＨＣＩ−ＨＦ溶液で洗浄した後、ウエハを積載
し酸化処理を行なった。ウエハ表面に生成した酸化膜中
に取り込まれた不純物量（Ｆｅ）を測定したところ、実
施例に係るボ−トの場合３×１０10atoms ／cm2 である
のに対し、比較例１，２に係るボ−トの場合は１５×１
０10atoms ／cm2 であった。これにより、実施例のボ−
トが比較例のものに比べて良好であることが確認でき
た。(3) After cleaning the boats of the above Examples and Comparative Examples 1 and 2 with an HCI-HF solution, wafers were loaded and an oxidation treatment was performed. The amount of impurities (Fe) taken into the oxide film formed on the wafer surface was measured and found to be 3 × 10 10 atoms / cm 2 in the case of the boat according to the example. On the other hand, in the case of the boats of Comparative Examples 1 and 2, 15 × 1
0 10 atoms / cm 2 Met. Thereby, the board of the embodiment is
It was confirmed that the results were better than those of the comparative example.
【００１６】(4) 次に、実施例、及び比較例１，２に係
るボ−トを分解し洗浄した後に再度組立てたボ−トにつ
いて酸化処理を行ない、表面酸化膜中に取り込まれた不
純物量を測定したところ、実施例に係るボ−トの場合４
×１０10atoms ／cm2 であるのに対し、比較例１，２に
係るボ−トの場合は夫々２０×1010atoms ／cm2 ，１５
×１０10atoms ／cm2 であった。これにより、実施例の
ボ−トが比較例１，２のボ−トものに比べて良好である
ことが確認できた。比較例１，２のボ−トが実施例のボ
−トよりも不純物量が多いのは、比較例のボ−トの場
合、保持ロッドの溝部等の加工面が露出しているため、
この個所等に不純物が残留することに起因するものと思
われる。(4) Next, the boats of Examples and Comparative Examples 1 and 2 were decomposed and washed, and then the reassembled boats were subjected to an oxidation treatment to remove impurities incorporated in the surface oxide film. When the amount was measured, in the case of the boat according to the example, 4
× 10 10 atoms / cm 2 On the other hand, in the case of the boats of Comparative Examples 1 and 2, 20 × 10 10 atoms / cm 2 respectively. , 15
× 10 10 atoms / cm 2 Met. From this, it was confirmed that the boats of Examples were better than those of Comparative Examples 1 and 2. The boats of Comparative Examples 1 and 2 have a larger amount of impurities than the boats of the Examples. In the case of the boat of Comparative Example, the processed surface such as the groove portion of the holding rod is exposed
It is thought that this is due to impurities remaining at these places.
【００１７】また、本願の他の実施例として、円筒体を
その長さ方向に略半分に切断し、その内壁に半導体ウエ
ハを保持する複数の保持部を形成した保持ロッドを用い
てもよい。保持ロッドにおける保持部の形成方法として
は、保持ロッドにウエハを保持するための溝を形成して
もよいし、また保持のための突起部を加工により形成し
てもよい。Further, as another embodiment of the present application, a holding rod may be used in which a cylindrical body is cut in half in its length direction and a plurality of holding portions for holding a semiconductor wafer are formed on the inner wall thereof. As a method of forming the holding portion of the holding rod, a groove for holding the wafer may be formed on the holding rod, or a protrusion for holding may be formed by processing.
【００１８】[0018]
【発明の効果】以上詳述した如く本発明によれば、従来
に比べて寸法精度を大幅に向上できるとともに、不純物
が部品間に付着しにくく、かつ不純物が付着しても容易
に除去でき、更に繰り返し使用しても歩留りの低下を回
避しえるシリコン製ウエハ支持ボ−トを提供できる。As described in detail above, according to the present invention, the dimensional accuracy can be greatly improved as compared with the prior art, and the impurities are less likely to adhere between the parts, and even if the impurities adhere, they can be easily removed. Further, it is possible to provide a silicon wafer support boat capable of avoiding a decrease in yield even if it is repeatedly used.
【図１】本発明の一実施例に係る縦型ボ−トの説明図で
あり、図１（Ａ）はこの実施例に係る縦型ボ−トの全体
図、図１（Ｂ）は図１（Ａ）の略平面図、図１（Ｃ）は
図１（Ａ）のボ−トに用いられる保持ロッドの説明図、
図１（Ｄ）は図１（Ａ）の要部の拡大図。FIG. 1 is an explanatory view of a vertical boat according to an embodiment of the present invention, FIG. 1 (A) is an overall view of the vertical boat according to this embodiment, and FIG. 1 (B) is a drawing. 1 (A) is a schematic plan view, FIG. 1 (C) is an explanatory view of a holding rod used in the boat of FIG. 1 (A),
FIG. 1D is an enlarged view of a main part of FIG.
１ａ，１ｂ…固定板、２…保持ロッド、３…開口部、４
…止めピン、５…溝、６…半導体ウエハ、７…保持溝、
８…シリコン膜。1a, 1b ... Fixed plate, 2 ... Holding rod, 3 ... Opening part, 4
... stop pin, 5 ... groove, 6 ... semiconductor wafer, 7 ... holding groove,
8 ... Silicon film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 田中 隆 山形県西置賜郡小国町大字小国町378番地 東芝セラミックス株式会社小国製造所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takashi Tanaka 378, Oguni Town, Oguni Town, Nishiokitama District, Yamagata Prefecture Toshiba Ceramics Co., Ltd. Oguni Factory
Claims (1)
有する保持ロッドと、これを固定するための少なくとも
２つ固定板とを具備し、少なくとも前記保持ロッドと固
定板との接合部の露出部分にシリコン膜を形成したこと
を特徴とするシリコン製ウエハ支持ボ−ト。1. A holding rod having a plurality of holding portions for holding a semiconductor wafer, and at least two fixing plates for fixing the holding rod, wherein at least an exposed portion of a joining portion between the holding rod and the fixing plate. A silicon wafer support boat characterized in that a silicon film is formed on.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3340799A JPH05175319A (en) | 1991-12-24 | 1991-12-24 | Wafer supporting silicon boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3340799A JPH05175319A (en) | 1991-12-24 | 1991-12-24 | Wafer supporting silicon boat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175319A true JPH05175319A (en) | 1993-07-13 |
Family
ID=18340399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3340799A Pending JPH05175319A (en) | 1991-12-24 | 1991-12-24 | Wafer supporting silicon boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175319A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002068852A (en) * | 2000-08-28 | 2002-03-08 | Techno Quartz Kk | Bonding method of silicon member and bonded body thereof |
| US7074693B2 (en) | 2003-06-24 | 2006-07-11 | Integrated Materials, Inc. | Plasma spraying for joining silicon parts |
| US7083694B2 (en) * | 2003-04-23 | 2006-08-01 | Integrated Materials, Inc. | Adhesive of a silicon and silica composite particularly useful for joining silicon parts |
| US7108746B2 (en) * | 2001-05-18 | 2006-09-19 | Integrated Materials, Inc. | Silicon fixture with roughened surface supporting wafers in chemical vapor deposition |
| US7713355B2 (en) | 2005-05-03 | 2010-05-11 | Integrated Materials, Incorporated | Silicon shelf towers |
| US7854974B2 (en) | 2001-05-18 | 2010-12-21 | Integrated Materials, Inc. | Tube formed of bonded silicon staves |
-
1991
- 1991-12-24 JP JP3340799A patent/JPH05175319A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002068852A (en) * | 2000-08-28 | 2002-03-08 | Techno Quartz Kk | Bonding method of silicon member and bonded body thereof |
| US7108746B2 (en) * | 2001-05-18 | 2006-09-19 | Integrated Materials, Inc. | Silicon fixture with roughened surface supporting wafers in chemical vapor deposition |
| US7854974B2 (en) | 2001-05-18 | 2010-12-21 | Integrated Materials, Inc. | Tube formed of bonded silicon staves |
| US7083694B2 (en) * | 2003-04-23 | 2006-08-01 | Integrated Materials, Inc. | Adhesive of a silicon and silica composite particularly useful for joining silicon parts |
| US7666513B2 (en) | 2003-04-23 | 2010-02-23 | Integrated Materials, Inc. | Adhesive of a silicon and silica composite for bonding together silicon parts |
| US8268448B2 (en) | 2003-04-23 | 2012-09-18 | Ferrotec (Usa) Corporation | Assembly of silicon parts bonded together with a silicon and silica composite |
| US7074693B2 (en) | 2003-06-24 | 2006-07-11 | Integrated Materials, Inc. | Plasma spraying for joining silicon parts |
| JP2007526196A (en) * | 2003-06-24 | 2007-09-13 | インテグレイティッド マテリアルズ インク | Plasma spraying for bonding silicon parts |
| US7736747B2 (en) | 2003-06-24 | 2010-06-15 | Integrated Materials, Incorporated | Silicon parts joined by a silicon layer preferably plasma sprayed |
| JP4664284B2 (en) * | 2003-06-24 | 2011-04-06 | インテグレイティッド マテリアルズ インク | Plasma spraying for bonding silicon parts |
| US7713355B2 (en) | 2005-05-03 | 2010-05-11 | Integrated Materials, Incorporated | Silicon shelf towers |
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