JP2000269150A - Semiconductor wafer heating tool and semiconductor wafer heater using the same - Google Patents
Semiconductor wafer heating tool and semiconductor wafer heater using the sameInfo
- Publication number
- JP2000269150A JP2000269150A JP11076515A JP7651599A JP2000269150A JP 2000269150 A JP2000269150 A JP 2000269150A JP 11076515 A JP11076515 A JP 11076515A JP 7651599 A JP7651599 A JP 7651599A JP 2000269150 A JP2000269150 A JP 2000269150A
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- JP
- Japan
- Prior art keywords
- wafer
- heating
- semiconductor wafer
- jig
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ加熱
処理用治具及びこれを用いた半導体ウエハ加熱処理用装
置に関し、より詳細には、特定形状に形成された半導体
ウエハ載置上面を有するプレート状の半導体ウエハ加熱
処理用治具及びこれを用いた半導体ウエハ加熱処理用装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer heating jig and a semiconductor wafer heating apparatus using the same, and more particularly, to a plate having a semiconductor wafer mounting upper surface formed in a specific shape. TECHNICAL FIELD The present invention relates to a semiconductor wafer heating jig and a semiconductor wafer heating apparatus using the same.
【０００２】[0002]
【従来の技術】半導体デバイスの製造工程には、酸化、
拡散、成膜等の種々の加熱処理プロセスがあり、半導体
ウエハはこれらのプロセスで様々な加熱処理を受ける。
そして、これらの処理の態様、使用する加熱手段の種類
等に応じて種々の半導体ウエハ加熱処理用治具が用いら
れている。例えば、縦型熱処理炉を用いる半導体ウエハ
熱処理工程の場合、複数枚のシリコン単結晶ウエハ等の
半導体ウエハが、縦型多段のウエハ保持治具、いわゆる
縦型ウエハボ−トに搭載保持されて処理される。この縦
型ウエハボ−トは、例えば、図６に示すように、ウエハ
１２を載置するための多数の溝（スリット）１１が設け
られた棒形状の支柱部材１０が複数本（通常３本あるい
は４本、図６の場合には３本）、縦方向に配列した構造
となっている。2. Description of the Related Art Oxidation, oxidation,
There are various heat treatment processes such as diffusion and film formation, and a semiconductor wafer is subjected to various heat treatments in these processes.
Various jigs for heating semiconductor wafers are used depending on the mode of the processing, the type of heating means used, and the like. For example, in the case of a semiconductor wafer heat treatment step using a vertical heat treatment furnace, a plurality of semiconductor wafers such as silicon single crystal wafers are mounted and held on a vertical multi-stage wafer holding jig, a so-called vertical wafer boat, and processed. You. For example, as shown in FIG. 6, the vertical wafer boat has a plurality of (usually three or three) rod-shaped support members 10 provided with a large number of grooves (slits) 11 for mounting a wafer 12 thereon. Four (three in FIG. 6) are arranged in the vertical direction.
【０００３】ウエハ１２はこの複数の支柱部材１０によ
り外周部の数点（図６の場合、３点）で支持されて熱処
理される。このウエハボ−トの形成素材として、一般
に、石英ガラス、炭化ケイ素（ＳｉＣ）コ−トのシリコ
ン（Ｓｉ）含浸炭化ケイ素、単結晶シリコン、多結晶シ
リコン等が用いられている。The wafer 12 is supported by the plurality of support members 10 at several points (three points in FIG. 6) on the outer periphery and is subjected to heat treatment. In general, quartz glass, silicon carbide (SiC) -impregnated silicon carbide impregnated silicon carbide, single crystal silicon, polycrystalline silicon, or the like is used as a material for forming the wafer boat.
【０００４】また、エピタキシャル成長装置等によるウ
エハ面への薄膜気相成長工程の場合、例えば、ＳｉＣコ
−トされた黒鉛基材から成るバッチ式や枚葉式のサセプ
タ−に半導体ウエハが載置され、所定の処理がなされ
る。In the case of a thin film vapor phase growth process on a wafer surface by an epitaxial growth apparatus or the like, for example, a semiconductor wafer is mounted on a batch type or single wafer type susceptor made of a graphite substrate coated with SiC. , Predetermined processing is performed.
【０００５】[0005]
【発明が解決しようとする課題】ところで、縦型ウエハ
ボ−ト等の半導体ウエハ加熱処理用治具に載置された被
処理ウエハには、ウエハの自重が支持部に集中するた
め、これにより生ずる応力が常に作用している。そし
て、この応力が臨界剪断応力を越えると、ウエハ内に転
位が発生する。この転位は応力の作用により巨視的な大
きさにまで広がり、スリップとなる。このスリップの発
生はウエハの品質を大きく低下させる。By the way, the weight of the wafer to be processed mounted on a jig for heating the semiconductor wafer, such as a vertical wafer boat, is concentrated on the supporting portion. Stress is always acting. When this stress exceeds the critical shear stress, dislocations occur in the wafer. This dislocation spreads to a macroscopic size by the action of stress, and becomes a slip. The occurrence of this slip greatly reduces the quality of the wafer.
【０００６】一般に、臨界剪断応力は高温ほどその値は
小さくなり、このことは、熱処理等の高温雰囲気下で
は、ウエハのスリップが、常温時に比較して著しく発生
し易くなることを意味している。特に、近年、半導体デ
バイスの高集積化に伴いウエハ一枚当たりのデバイス収
率を上げるために、ウエハの大口径化が進んでいる。そ
の結果、ウエハの自重が大きくなり、それに伴いウエハ
に作用する応力が増大する傾向にあり、ウエハ中にスリ
ップがより発生し易くなってきている。In general, the value of the critical shear stress decreases as the temperature increases, which means that the slip of the wafer is more likely to occur under a high temperature atmosphere such as a heat treatment than at a normal temperature. . In particular, in recent years, the diameter of a wafer has been increased in order to increase the device yield per wafer with the high integration of semiconductor devices. As a result, the weight of the wafer becomes large, and the stress acting on the wafer tends to increase with the weight of the wafer, and the slip is more likely to occur in the wafer.
【０００７】また、上記した理由の他に、ウエハのサイ
ズが大きくなることに起因して、特に昇温時におけるウ
エハ中心部と周縁部との温度差が大きくなる傾向にあ
り、この温度差により生じる熱応力も上記スリップ発生
の原因の一つとなっている。チョクラルスキ−法で製造
される所謂ＣＺ−シリコンウエハは、半導体デバイスの
基材として代表的なものであるが、このＣＺ−シリコン
ウエハの内でも、特に、格子間酸素濃度［Ｏｉ］が低い
低格子間酸素濃度ＣＺ−シリコンウエハは、発生したス
リップが大きくなりやすい傾向を有し、加熱処理等のウ
エハ処理時に大きなスリップが発生していた。In addition to the above-mentioned reason, the temperature difference between the central portion and the peripheral portion of the wafer tends to increase particularly when the temperature is increased due to the increase in the size of the wafer. The generated thermal stress is also one of the causes of the slip. A so-called CZ-silicon wafer manufactured by the Czochralski method is typical as a substrate of a semiconductor device. Among these CZ-silicon wafers, particularly, a low lattice having a low interstitial oxygen concentration [Oi] is used. In the inter-oxygen concentration CZ-silicon wafer, the generated slip tends to increase, and a large slip occurs during wafer processing such as heat treatment.
【０００８】このような、スリップ発生に基づくウエハ
の歩留まり低下を回避するためには、前記半導体ウエハ
加熱処理用治具におけるウエハの支持点の数を増やし、
一点当たりの支持荷重を減少させ、支持点での応力を前
記臨界剪断応力以下に軽減させることが考えられる。In order to avoid such a decrease in the yield of the wafer due to the occurrence of slip, the number of the supporting points of the wafer in the jig for heating the semiconductor wafer is increased.
It is conceivable to reduce the supporting load per point and reduce the stress at the supporting point to the critical shear stress or less.
【０００９】しかしながら、半導体ウエハ加熱処理用治
具におけるウエハの支持点の数を増しても、各支持点間
の水平精度等の問題から、実際には、ウエハは多くとも
４点程度の支点でスポット的に支えられている状態とな
り、上記方法では依然として応力の集中が残り、実質的
解決がなされない。However, even if the number of support points of the wafer in the jig for heating a semiconductor wafer is increased, the wafer is actually limited to at most about four support points due to problems such as horizontal accuracy between the support points. As a result, the stress concentration still remains in the above method, and no substantial solution is achieved.
【００１０】そこで、ウエハをそのほぼ全面で支持する
方法、即ち、例えばウエハを、それとほぼ同径、同厚の
円形プレ−ト上に載置して支持する方法が考えられた。
この方法は、可能な限り支持点を増すことを基本概念と
したものである。しかし、実際のプレ−ト面には凹凸が
あり、実質的に凸部のみでウエハを支持してしまい、そ
の結果スリップの発生を完全に抑制するという目的を達
成することはできなかった。また、この問題を解決する
手段の一つとして、プレ−ト板のウエハ載置面を、鏡面
研磨等により該表面の凹凸がほぼ完全になくなるまで仕
上げ加工し、その表面にウエハを載置する方法が考えら
れる。しかし、加熱処理時にウエハとプレ−ト板が強固
に密着してしまい、ウエハとプレート板を剥離させるこ
とが困難となるという新たな不都合を招来した。Therefore, a method of supporting the wafer on almost the entire surface thereof, that is, for example, a method of mounting and supporting the wafer on a circular plate having substantially the same diameter and thickness as the wafer has been considered.
The basic concept of this method is to increase the number of support points as much as possible. However, the actual plate surface has irregularities, and the wafer is supported substantially only by the convex portions. As a result, the purpose of completely suppressing the occurrence of slip cannot be achieved. Further, as one means for solving this problem, the wafer mounting surface of the plate is finished by mirror polishing or the like until the surface unevenness is almost completely eliminated, and the wafer is mounted on the surface. A method is conceivable. However, the wafer and the plate plate are firmly adhered to each other during the heat treatment, which causes a new disadvantage that it is difficult to separate the wafer and the plate plate.
【００１１】本発明者等は、従来のウエハボ−ト等の支
持治具における上記問題点を解決するために、ウエハを
面で支持するための載置面の最適形状について鋭意研究
を重ねた結果、下記に詳述するようにウエハ載置面を特
定形状に形成したプレ−ト状の半導体ウエハ加熱処理用
治具を用いることにより上記問題が確実に解決できるこ
とを見出し、この知見に基づき本発明を完成した。ま
た、プレ−ト状の半導体ウエハ加熱処理用治具を搭載、
支持する方法（部材）の最適形態について鋭意研究し、
下記に詳述するように前記治具、及びこれを支持する部
材の特定支持構造に形成した半導体ウエハ加熱処理用装
置により、上記問題が確実に解決できることを見出し、
この知見に基づき本発明を完成した。The present inventors have conducted intensive studies on the optimum shape of a mounting surface for supporting a wafer on a surface in order to solve the above-mentioned problems in a conventional support jig such as a wafer boat. It has been found that the above problem can be surely solved by using a plate-shaped semiconductor wafer heating jig having a wafer mounting surface formed in a specific shape as described in detail below. Was completed. In addition, a plate-shaped jig for heating semiconductor wafers is mounted,
After a thorough study on the optimal form of the supporting method (member),
As described in detail below, the jig, and the semiconductor wafer heating apparatus formed in a specific support structure of the member supporting the jig, found that the above problem can be reliably solved,
The present invention has been completed based on this finding.
【００１２】本発明は、例え大口径の半導体ウエハであ
っても、スリップや欠陥を発生させることなく、半導体
ウエハを均質に加熱処理することができる半導体ウエハ
加熱処理用治具及びこれを用いた半導体ウエハ加熱処理
用装置を提供することを目的とするものである。According to the present invention, there is provided a jig for heating a semiconductor wafer capable of uniformly heating a semiconductor wafer without causing slips or defects, even if the semiconductor wafer has a large diameter. It is an object of the present invention to provide an apparatus for heating a semiconductor wafer.
【００１３】[0013]
【課題を解決するための手段】本発明の半導体ウエハ加
熱処理用治具は、半導体ウエハを、その上面に載置して
加熱処理するプレート状の半導体ウエハ加熱処理用治具
において、前記上面が、被処理ウエハの直径以上の直径
の円形周縁を有すると共に、中央部に最深部を有する凹
曲面形状に形成され、載置したウエハ周縁との接点位置
と前記最深部との高低差が２０μｍ乃至５００μｍの範
囲にあることを特徴としている。According to the present invention, there is provided a jig for heating a semiconductor wafer according to the present invention, which is a plate-shaped jig for heating a semiconductor wafer on which a semiconductor wafer is placed and heated. A circular edge having a diameter equal to or larger than the diameter of the wafer to be processed, and having a concave curved surface shape having a deepest portion in the center, and a height difference between the contact position with the placed wafer peripheral edge and the deepest portion is 20 μm or more. It is characterized by being in the range of 500 μm.
【００１４】ここで、前記プレ−ト状の半導体ウエハ加
熱処理用治具（以下プレート状治具と略称することがあ
る）の上面における凹曲面形状が、放物面形状又は凹球
面形状に形成されていることが望ましい。また、前記プ
レ−ト状治具のウエハ載置面における凹曲面形状が凹球
面形状に形成され、前記凹球面形状の曲率半径（ｒ）
が、載置するウエハの半径をｂ、該ウエハ周縁と載置面
との接点位置から前記最深部までの高低差をａとしたと
き、ｒ＝（ｂ2 ＋ａ2 ） ／２ａの関係を有することが
望ましい。更に、前記プレ−ト状治具のウエハ載置面の
中心線平均粗さＲａが０．３乃至０．８μｍであること
が望ましい。Here, the concave shape of the upper surface of the plate-shaped semiconductor wafer heating treatment jig (hereinafter, may be abbreviated as a plate-shaped jig) is formed as a parabolic surface or a concave spherical surface. It is desirable to have been. The concave jig on the wafer mounting surface of the plate-like jig is formed into a concave spherical form, and the radius of curvature (r) of the concave spherical form is formed.
Has a relationship of r = (b 2 + a 2 ) / 2a, where b is the radius of the wafer to be mounted, and a is the height difference from the contact point between the peripheral edge of the wafer and the mounting surface to the deepest portion. It is desirable. Further, it is desirable that the center line average roughness Ra of the wafer mounting surface of the plate-shaped jig is 0.3 to 0.8 μm.
【００１５】また、該プレ−ト状治具の形状は、前記上
面に対向する下面が、上面と平行する凹曲面皿形の形状
のものや前記上面における前記高低差が２０μｍ乃至２
００μｍの範囲にあり、上面に対向する下面が、ほぼ平
面に形成されていること、いわゆる凹面・平面型形状で
あることが好ましい。形状が凹曲面皿形の場合は、その
厚さが、１．０ｍｍ乃至１．５ｍｍの範囲にあることが
好ましく、さらにこの時の厚さの誤差範囲が±０．３ｍ
ｍ以内であることが特に望ましい。また、凹面・平面型
形状の場合は、その周縁部高さ（周縁部厚み）が１．２
乃至１．５ｍｍの範囲にあることが特に好ましい。ま
た、前記プレ−ト状治具のウエハ載置面に、複数の貫通
孔が配設されていることが望ましく、前記貫通孔の口径
が３ｍｍ乃至１０ｍｍであること、前記貫通孔の数が３
個乃至１０個であることが望ましい。The plate-shaped jig has a lower surface facing the upper surface in the shape of a concave curved dish parallel to the upper surface, or the height difference in the upper surface is 20 μm to 2 μm.
It is preferable that the lower surface opposed to the upper surface be in a range of 00 μm and be formed substantially flat, that is, a so-called concave / planar shape. When the shape is a concave curved dish, the thickness is preferably in the range of 1.0 mm to 1.5 mm, and the thickness error range at this time is ± 0.3 m.
m is particularly desirable. In the case of a concave / planar shape, the peripheral edge height (peripheral thickness) is 1.2.
It is particularly preferable that it is in the range of 1.5 to 1.5 mm. Preferably, a plurality of through holes are provided on the wafer mounting surface of the plate-shaped jig, the diameter of the through holes is 3 mm to 10 mm, and the number of the through holes is 3
It is desirable that the number is 10 to 10.
【００１６】更に、本発明の半導体ウエハ加熱処理用装
置は、被処理ウエハを載置する上記半導体ウエハ加熱処
理用治具を、単数もしくは複数搭載し、前記被処理ウエ
ハを加熱処理するための半導体ウエハ加熱処理用装置で
あって、該装置が、前記治具の下面中心点から半径方向
に、該半径の０．６乃至０．８倍の距離を隔てた位置で
治具を支持する支持部材を具備することを特徴としてい
る。ここで、上記半導体ウエハ加熱処理用装置は、被処
理ウエハ載置治具の下面を少なくとも３点で支持するこ
とが好ましい。前記プレート状治具を底面で支持する少
なくとも３点がほぼ等間隔に位置することが特に望まし
い。Further, the apparatus for heating a semiconductor wafer according to the present invention comprises one or more jigs for heating a semiconductor wafer on which a wafer to be processed is mounted, and a semiconductor for heating the wafer to be processed. A wafer heating apparatus, comprising: a support member for supporting the jig at a position spaced from the center point of the lower surface of the jig by 0.6 to 0.8 times the radius in a radial direction. It is characterized by having. Here, it is preferable that the semiconductor wafer heating processing apparatus supports the lower surface of the processing target wafer mounting jig at at least three points. It is particularly desirable that at least three points supporting the plate-shaped jig on the bottom surface are located at substantially equal intervals.
【００１７】また、前記半導体ウエハ加熱処理用装置
が、頂板、底板及び該頂、底両板を所定間隔を隔てて連
結固定する連結部材とを備え、両板間に、半導体ウエハ
を載置した複数の前記治具を上下多段に搭載、支持され
た半導体ウエハ加熱処理用装置であって、前記支持部材
が、夫々の前記治具を個別に支持できるように、前記連
結部材から多段に突出して設けられている半導体ウエハ
加熱処理用装置であることが好ましい。また、前記縦型
ウエハボ−ト形式の半導体ウエハ加熱処理用装置におけ
る前記連結部材が、円板状の頂底両板間に設けられた３
本の柱状部材からなり、各柱状部材から前記支持部材を
突出させたものであることが特に好ましい。更に、前記
半導体ウエハ加熱処理用装置が、被処理ウエハを載置し
た前記治具を保持し、これを加熱処理する半導体ウエハ
加熱処理用装置であって、前記支持部材が、平板状基材
の上面に突出形成された半導体ウエハ加熱処理用装置、
即ち、所謂、バッチ式または枚葉式半導体ウエハ処理装
置用のサセプタ−であることが望ましい。Further, the semiconductor wafer heating apparatus includes a top plate, a bottom plate, and a connecting member for connecting and fixing the top and bottom plates at a predetermined interval, and a semiconductor wafer is placed between the two plates. An apparatus for heating and processing a semiconductor wafer in which a plurality of jigs are mounted and supported in multiple stages, wherein the support member projects from the connection member in multiple stages so as to individually support each of the jigs. It is preferable that the semiconductor wafer heating apparatus is provided. In the vertical wafer boat type semiconductor wafer heating apparatus, the connecting member is provided between both the top and bottom disks.
It is particularly preferable that the support member is composed of three columnar members, and the support member is protruded from each columnar member. Further, the semiconductor wafer heating apparatus is a semiconductor wafer heating apparatus that holds the jig on which the wafer to be processed is mounted and heats the jig, wherein the support member is a flat base material. A semiconductor wafer heating apparatus formed to project from the upper surface,
That is, it is desirable to use a susceptor for a so-called batch type or single wafer type semiconductor wafer processing apparatus.
【００１８】本発明にかかる半導体ウエハ加熱処理用の
プレート状治具は、ウエハを面で支持するために最適な
ウエハ載置面、即ち、載置ウエハの直径以上の直径を有
すると共に中央部に最深部を有する凹曲面形状に形成さ
れ、かつ載置ウエハ周縁との接点位置から最深部までの
高低差が２０乃至５００μｍの範囲にあるという特定ウ
エハ載置面を有するウエハ載置用プレ−トであることが
顕著な特徴である。The plate-shaped jig for heating a semiconductor wafer according to the present invention has an optimum wafer mounting surface for supporting a wafer on a surface, that is, a jig having a diameter equal to or larger than the diameter of the mounted wafer and having a central portion. A wafer mounting plate formed in a concave curved shape having a deepest portion and having a specific wafer mounting surface in which a height difference from a contact position with the peripheral edge of the mounting wafer to the deepest portion is in a range of 20 to 500 μm. Is a remarkable feature.
【００１９】例えば、周縁が円形の放物面形状または凹
球面形状等の特定凹曲面形状載置面で、ウエハを支持し
た場合、初めにウエハの周縁部と該載置面とが接触す
る。そして、載置されたウエハは、自重により撓んでそ
の中央部は僅かに沈むことにより載置面中央部とも接す
るようになる。これによって、ウエハが載置面周辺部と
中央部の両方で同時に支持され、応力の集中を緩和する
ことができる。For example, when a wafer is supported on a mounting surface having a specific concave curved surface such as a parabolic surface or a concave spherical surface having a circular periphery, first, the peripheral portion of the wafer comes into contact with the mounting surface. Then, the placed wafer is bent by its own weight and its central part is slightly lowered, so that it comes into contact with the central part of the mounting surface. As a result, the wafer is simultaneously supported at both the peripheral portion and the central portion of the mounting surface, and the concentration of stress can be reduced.
【００２０】上記のようなウエハ支持態様の場合、ウエ
ハは広範囲で支持されるため、スリップは発生しない。
即ち、本発明においては、ウエハ載置用プレート状治具
の載置面が凹曲面形状に形成されること及びウエハ載置
面の中央部（最深部）と載置面周辺部のウエハ周縁接触
位置との高さの差が２０乃至５００μｍの範囲にあるこ
とが特に重要である。この差が５００μｍを越えるとウ
エハが撓わんでもウエハの中央部が載置面にまで達する
ことができないため周縁部のみの支持となり、そこから
スリップが発生しやすい。また、この差が２０μｍ未満
ではウエハの中央部のみ、あるいはウエハの中央部と特
定の一部を支持することになり、そこからスリップが発
生する。In the case of the above-described wafer support mode, no slip occurs because the wafer is supported over a wide range.
That is, according to the present invention, the mounting surface of the wafer mounting plate-shaped jig is formed into a concave curved surface, and the center (the deepest portion) of the wafer mounting surface and the peripheral edge of the wafer are in contact with the peripheral surface of the mounting surface. It is particularly important that the height difference with the position is in the range of 20 to 500 μm. If this difference exceeds 500 μm, the central portion of the wafer cannot reach the mounting surface even if the wafer is bent, so that only the peripheral portion is supported, and slip is likely to occur therefrom. If the difference is less than 20 μm, only the central part of the wafer or a specific part of the central part of the wafer is supported, and a slip occurs therefrom.
【００２１】また、本発明の半導体ウエハ加熱処理用治
具において、前記プレート状治具の載置面の中心線平均
粗さＲａ（ＪＩＳ Ｂ０６０１−１９９４）を０．３乃
至０．８μｍの範囲にすることによって、上記スリップ
発生をより確実に防止することができ、また加熱処理時
にウエハとプレ−トとが密着せず、容易にウエハを剥離
させることができる。また、粗度をこの範囲とすること
により、剥離時にウエハが破壊するのを防止することが
出来る。Further, in the jig for heating a semiconductor wafer according to the present invention, the center line average roughness Ra (JIS B0601-1994) of the mounting surface of the plate-shaped jig is in the range of 0.3 to 0.8 μm. By doing so, the occurrence of the slip can be more reliably prevented, and the wafer and the plate do not come into close contact with each other during the heat treatment, so that the wafer can be easily peeled. Further, by setting the roughness within this range, it is possible to prevent the wafer from being broken at the time of peeling.
【００２２】また、プレート状治具の載置面に、口径が
３乃至１０ｍｍ程度の貫通孔を、３乃至１０個、配設し
た態様のものは、加熱処理時に載置ウエハとプレ−トの
間隙が真空状態となることによって、生ずる両者の密着
を防止する利点を有する。In the embodiment in which 3 to 10 through-holes each having a diameter of about 3 to 10 mm are provided on the mounting surface of the plate-shaped jig, the mounting wafer and the plate can be formed during the heat treatment. When the gap is in a vacuum state, there is an advantage that the adhesion between the two is prevented.
【００２３】更に、前記プレート状治具の少なくとも載
置面が、シリコン（Ｓｉ）からなる態様の治具の場合に
は、特に載置ウエハがシリコンウエハの場合、ウエハと
熱膨張率や硬度等の物性が同一であるためウエハを傷つ
けたりすることがなく、また、特に単結晶シリコンの場
合には、高純度であり、汚染の問題がない。またプレ−
ト状治具の上面に対向する下面が上面と平行な凹曲面形
状を有し、該プレ−ト材の厚さが、１．０乃至１．５ｍ
ｍの範囲にあるものは、上記利点の他に、プレ−ト上に
ウエハを載置して加熱した場合にも変形等を起こすこと
なく充分な支持強度を有する。特に、熱容量も過大でな
いため熱伝達も速く、加熱時にウエハを温度ムラなく均
一に昇温させることができるため、温度歪みに基づくウ
エハのスリップ発生を抑制できる。一方、プレ−ト治具
の上面における高低差が２０μｍ乃至２００μｍの範囲
にあり、下面がほぼ平面に形成されたものにあっては、
熱伝達の不均一性から高低差を比較的小さく（２００μ
ｍ）に抑える必要がある。Further, when the mounting surface of at least the plate-shaped jig is made of silicon (Si), particularly when the mounted wafer is a silicon wafer, the wafer and the wafer have a coefficient of thermal expansion and hardness. Since they have the same physical properties, they do not damage the wafer. In particular, in the case of single-crystal silicon, it has high purity and does not have a problem of contamination. In addition,
The lower surface facing the upper surface of the jig has a concave curved shape parallel to the upper surface, and the thickness of the plate material is 1.0 to 1.5 m.
In the range of m, in addition to the above advantages, even if the wafer is placed on the plate and heated, it has a sufficient supporting strength without causing deformation or the like. In particular, since the heat capacity is not excessive, the heat transfer is fast, and the temperature of the wafer can be uniformly raised without heating during heating, so that the occurrence of the slip of the wafer due to the temperature distortion can be suppressed. On the other hand, when the height difference on the upper surface of the plate jig is in the range of 20 μm to 200 μm and the lower surface is formed almost flat,
The height difference is relatively small due to the non-uniformity of heat transfer (200 μm).
m).
【００２４】更にまた、前記プレ−ト状治具及びその底
面において支持部材により、少なくとも３点で支持する
半導体ウエハ加熱処理用装置で、前記３支持点が、プレ
ート状治具の下面中心から半径方向に該半径の０．６乃
至０．８倍の距離隔たって位置する半導体ウエハ加熱処
理用装置は、従来しばしば生じた載置ウエハの外周部で
の波状変形を抑制できる利点を有する。プレート状治具
の下面中心から半径方向に該半径の０．６倍未満の場合
には、支持部分が突起状となって、この部分のみの支持
となってウエハにスリップが発生しやすくなる。一方、
プレート状治具の下面中心から半径方向に該半径の０．
８倍を越えた場合には、該プレ−トが撓みすぎ、主にウ
エハ周辺のみの支持となってスリップが発生しやすくな
る。また、半導体ウエハ加熱処理用装置が、いわゆる縦
型ウエハボ−ト形式のものである場合は、ウエハ載置プ
レート治具を多段に搭載することができ、一度に多数の
ウエハをスリップ等の欠陥を生じさせることなく良好に
加熱処理することができる。またプレ−ト状治具は、バ
ッチ式あるいは枚葉式サセプタ−にも適用することがで
きる。Still further, in the apparatus for heating a semiconductor wafer, wherein the plate-shaped jig and the bottom surface thereof are supported by at least three points by a support member, the three support points are located at a radius from the center of the lower surface of the plate-shaped jig. The semiconductor wafer heating apparatus located at a distance of 0.6 to 0.8 times the radius in the direction has an advantage in that it is possible to suppress the wavy deformation at the outer peripheral portion of the mounted wafer which has conventionally often occurred. If the radius is less than 0.6 times the radius in the radial direction from the center of the lower surface of the plate-shaped jig, the support portion becomes a projection, and only this portion is supported, so that the wafer is likely to slip. on the other hand,
The radius of 0.
If it exceeds eight times, the plate will bend too much, and it will mainly support only the periphery of the wafer, so that slip will easily occur. When the semiconductor wafer heating apparatus is of a so-called vertical wafer boat type, a wafer mounting plate jig can be mounted in multiple stages, and a large number of wafers can be simultaneously subjected to defects such as slip. Good heat treatment can be performed without causing any heat generation. Further, the plate-shaped jig can be applied to a batch type or single wafer type susceptor.
【００２５】本発明の半導体ウエハ加熱処理用のプレー
ト状治具は、特に、加熱処理時等においてスリップが発
生しやすいといわれている低格子間酸素濃度シリコンウ
エハの加熱処理用に有効に適用できる。The plate-shaped jig of the present invention for heat treatment of a semiconductor wafer can be effectively applied particularly to heat treatment of a silicon wafer having a low interstitial oxygen concentration, which is said to be liable to slip during a heat treatment or the like. .
【００２６】[0026]
【発明の実施の形態】以下本発明を、図に基づいて詳細
に説明する。図１は、本発明にかかるプレ−ト状治具の
一実施形態を誇張して示した斜視図であり、図２
（ａ）、（ｂ）は、図１のプレ−ト状治具に被処理ウエ
ハを載置した状態を示した図であって、（ａ）は載置直
後のウエハの状態を示す断面図であり、（ｂ）は加熱中
のウエハの状態変化を示す断面図である。図３は、本発
明のプレート状治具の他の一実施形態を誇張して示した
斜視図である。図４は、加熱処理すべき半導体ウエハを
載置した本発明のプレート状治具を多段搭載、支持し
た、本発明にかかる半導体ウエハ加熱処理用装置を炉内
に収容した態様で示した図である。図５（ａ）、（ｂ）
は、単数のプレート状治具を３本の支持部材によって支
持した枚葉式の、本発明にかかる半導体ウエハ加熱処理
用装置を炉内に収容した態様で示し、（ａ）は、その側
面図を、（ｂ）は平面図を示す。また図６は、半導体ウ
エハを支持する従来の縦型ウエハボ−トを示す。更に、
図７は本発明のプレ−ト状治具の多段搭載支持する、本
発明にかかる半導体ウエハ加熱処理装置を構成する支持
具を示した斜視図、図８は単数のプレ−ト状治具をリン
グ状の支持部材によって支持した枚葉式の、本発明にか
かる半導体ウエハ熱処理装置を示した断面図、図９は図
８に示した該装置の平面図、図１０はリング状の支持部
材を馬蹄形状とした本発明にかかる半導体ウエハ加熱処
理装置である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 1 is an exaggerated perspective view of an embodiment of a plate-shaped jig according to the present invention.
(A), (b) is a figure which shows the state which mounted the to-be-processed wafer on the plate-shaped jig of FIG. 1, (a) is sectional drawing which shows the state of the wafer immediately after mounting. (B) is a cross-sectional view showing a change in the state of the wafer during heating. FIG. 3 is an exaggerated perspective view of another embodiment of the plate-shaped jig of the present invention. FIG. 4 is a view showing a state in which the apparatus for heating a semiconductor wafer according to the present invention is accommodated in a furnace in which a plate-shaped jig of the present invention on which a semiconductor wafer to be heated is mounted is mounted and supported in multiple stages. is there. FIG. 5 (a), (b)
FIG. 1A shows a single-wafer type semiconductor wafer heating apparatus according to the present invention in which a single plate-shaped jig is supported by three support members in a furnace, and FIG. (B) shows a plan view. FIG. 6 shows a conventional vertical wafer boat for supporting a semiconductor wafer. Furthermore,
FIG. 7 is a perspective view showing a support constituting a semiconductor wafer heat treatment apparatus according to the present invention, which supports a plate-like jig of the present invention in multiple stages, and FIG. 8 shows a single plate-like jig. FIG. 9 is a cross-sectional view showing a single wafer type semiconductor wafer heat treatment apparatus according to the present invention supported by a ring-shaped support member, FIG. 9 is a plan view of the apparatus shown in FIG. 8, and FIG. It is a semiconductor wafer heat treatment apparatus according to the present invention in a horseshoe shape.
【００２７】本発明の半導体ウエハ加熱処理用のプレー
ト状治具は、図１、図２に示すように、そのウエハ載置
面（上面）が、載置される被処理ウエハの直径２ｂ（半
径ｂ）以上の周縁直径Ｄを有すると共に、中央部に最深
部を有する凹曲面形状に形成され、かつ載置ウエハ周縁
との接点位置から前記最深部までの高低差ａが２０乃至
５００μｍの範囲となるように形成される。As shown in FIGS. 1 and 2, a plate-shaped jig for heating a semiconductor wafer according to the present invention has a wafer mounting surface (upper surface) having a diameter 2b (radius) of a wafer to be processed. b) It has the above-mentioned peripheral edge diameter D, is formed into a concave curved surface shape having a deepest portion at the center, and the height difference a from the contact position with the mounting wafer peripheral edge to the deepest portion is in the range of 20 to 500 μm. It is formed so that it becomes.
【００２８】このウエハ載置面に被処理ウエハを載置す
ると、図２（ａ）に示すように、ウエハ１はその周縁部
で載置面と接触して支持されこの状態で加熱処理を行う
と、中央部はその自重により僅かに撓んで周縁部より沈
み、その中央部がプレート状治具２の最深部である中央
部に接し、この凹曲面全体で支持される（図２
（ｂ））。When a wafer to be processed is mounted on the wafer mounting surface, as shown in FIG. 2 (a), the wafer 1 is supported in contact with the mounting surface at its peripheral edge, and heat treatment is performed in this state. The central portion is slightly bent by its own weight and sinks from the peripheral portion, and the central portion contacts the central portion which is the deepest portion of the plate-shaped jig 2 and is supported by the entire concave curved surface (FIG. 2).
(B)).
【００２９】ウエハは、熱処理装置内で加熱された場
合、下面側と上面側の両方から熱を受ける。その熱量
は、通常、下面側が若干多いため、これによる熱膨張差
により、ウエハの周辺部が極僅かではあるが上方に反る
傾向がある。前記プレ−ト状治具２による凹曲面の支持
は、前記ウエハのこのような性質を利用したものであ
る。When the wafer is heated in the heat treatment apparatus, it receives heat from both the lower surface and the upper surface. Usually, the amount of heat is slightly larger on the lower surface side, and the peripheral portion of the wafer tends to be warped upward, though slightly, due to a difference in thermal expansion due to the heat amount. The support of the concave curved surface by the plate-shaped jig 2 utilizes such a property of the wafer.
【００３０】本発明のプレ−ト状治具２のウエハ載置面
は、上記したウエハの加熱処理時における自然変形に適
合した形状に形成したものである。該ウエハ載置面の形
状は、上記の目的から、中央部に最深部を有する凹曲面
形状であれば、特に限定されるものではない。例えば、
任意の凹曲面形状に形成されて差し支えないが、凹曲面
が放物線を回転して形成される放物面形状、円を回転し
て形成される凹球面形状等であっても良い。The wafer mounting surface of the plate-shaped jig 2 of the present invention is formed in a shape suitable for natural deformation during the above-mentioned wafer heating process. For the above purpose, the shape of the wafer mounting surface is not particularly limited as long as it is a concave curved surface shape having a deepest portion at the center. For example,
The concave curved surface may be formed into an arbitrary concave curved shape, but the concave curved surface may be a parabolic shape formed by rotating a parabola, a concave spherical shape formed by rotating a circle, or the like.
【００３１】特に好ましい凹曲面形状は、図２（ａ）に
示すように、その曲率半径（ｒ）が、載置ウエハの半径
をｂ、該ウエハ周縁の載置面との接点位置から載置面最
凹点までの高低差をａとしたとき、 ｒ＝（ｂ2 ＋ａ2 ） ／２ａ の関係を有する凹球面状に形成されたものである。As shown in FIG. 2 (a), a particularly preferable concave curved surface shape is such that the radius of curvature (r) is b for the radius of the wafer to be mounted, and When the height difference up to the most concave point on the surface is a, the surface is formed in a concave spherical shape having a relationship of r = (b 2 + a 2 ) / 2a.
【００３２】本発明では、上記ウエハ載置面の凹曲面形
状において、載置ウエハ周縁との接点位置から最深部ま
での高低差が、２０乃至５００μｍ、より好ましくは５
０乃至３５０μｍ、の範囲にあるように形状設定するこ
とが重要である。この高低差が５００μｍを越える場合
は、ウエハの中央部が前記載置面の最深部である中央部
に届かず、実質的にウエハ周辺部のみの支持となり、本
発明の目的であるウエハのスリップ発生を充分に防止す
ることができない。一方、高低差が２０μｍを下回る場
合は、ウエハの加熱時の反りが高低差を上回る場合が生
じ、ウエハ中央部のみ、または、中央部と周辺部局所点
のみでの支持となり、この場合も、本発明の目的を充分
に達成することができない。なお、前記ウエハ載置面が
曲率半径ｒ＝（ｂ2 ＋ａ2 ） ／２ａの関係を有する凹
球面状に形成された場合、被処理ウエハ１２インチ径
（３００ｍｍ）で、曲率半径は、５６．２５乃至５６
２．５ｍとなる。According to the present invention, in the concavely curved surface of the wafer mounting surface, the height difference from the contact point with the peripheral edge of the mounted wafer to the deepest portion is 20 to 500 μm, more preferably 5 to 500 μm.
It is important to set the shape so that it is in the range of 0 to 350 μm. If the height difference exceeds 500 μm, the central portion of the wafer does not reach the central portion, which is the deepest portion of the mounting surface, and only the peripheral portion of the wafer is substantially supported. The occurrence cannot be sufficiently prevented. On the other hand, when the height difference is less than 20 μm, the warpage during heating of the wafer may exceed the height difference, and only the wafer center portion or only the center portion and the peripheral portion local point are supported. The object of the present invention cannot be sufficiently achieved. When the wafer mounting surface is formed in a concave spherical shape having a relationship of a radius of curvature r = (b 2 + a 2 ) / 2a, the radius of curvature is 56.times. 25 to 56
2.5 m.
【００３３】本発明の前記プレ−ト状治具の載置面（上
面）において載置ウエハと接する部分は、その表面粗さ
である中心線平均粗さＲａ（ＪＩＳ Ｂ０６０１−１９
９４）が０．３乃至０．８μｍの範囲に形成されること
が好ましい。中心線平均粗さが０．３μｍを下回る場合
は、加熱処理時にウエハと載置面とが密着する傾向があ
り、ウエハをプレート状治具から剥離させることが困難
となる。中心線平均粗さが、０．８μｍを越える場合
は、ウエハの載置面接触部での支持が、粗面の凸点のみ
の支持となり、スリップ発生の誘因となる。In the mounting surface (upper surface) of the plate-shaped jig of the present invention, a portion in contact with a mounting wafer has a center line average roughness Ra (JIS B0601-19) which is the surface roughness.
94) is preferably formed in the range of 0.3 to 0.8 μm. If the center line average roughness is less than 0.3 μm, the wafer and the mounting surface tend to adhere to each other during the heat treatment, and it becomes difficult to peel the wafer from the plate-shaped jig. When the center line average roughness exceeds 0.8 μm, the support at the contact portion of the mounting surface of the wafer is supported only at the convex point of the rough surface, which causes slip.
【００３４】また、図示しないが、本発明のプレ−ト状
治具のウエハ載置面に、口径が３乃至１０ｍｍ、特に好
ましくは５乃至８ｍｍの貫通孔を、３乃至１０個、特に
好ましくは４乃至７個、面内に均一に分布して配設する
ことが好ましい。上記の貫通孔を設けた態様のプレート
状治具は、加熱処理時に載置ウエハとプレ−トの間隙が
真空状態となることにより生ずる両者の密着を防止する
ことができる。Although not shown, 3 to 10 through holes having a diameter of 3 to 10 mm, particularly preferably 5 to 8 mm, and particularly preferably 5 to 8 mm are formed on the wafer mounting surface of the plate-shaped jig of the present invention. It is preferable to arrange 4 to 7 pieces evenly distributed in the plane. The plate-shaped jig provided with the through-holes described above can prevent the gap between the mounted wafer and the plate from being brought into a vacuum state during the heat treatment, thereby preventing the two from sticking to each other.
【００３５】前記貫通孔３の孔径が１０ｍｍより大きい
場合や孔数が１０個より多い場合は、プレート状治具自
体の強度低下やウエハ加熱時の温度むらの増大を招き易
くなる。また、ウエハ載置面に貫通孔が不均一に配置さ
れた場合は、プレート状治具の強度低下を招き、貫通孔
がウエハ面の動径方向の同一直線上に３点以上並ぶ態様
に配設された場合も同様にプレート状治具の強度低下を
招く。これは、穴が、同一直線上に並ぶとその領域で断
面積が小さくなり、同じ力が作用する場合、断面積が小
さくなるため応力は大きくなる。撓みは、応力に比例す
るので、結局上記の条件では大きく撓むことになる。When the diameter of the through-hole 3 is larger than 10 mm or when the number of holes is larger than 10, the strength of the plate-shaped jig itself is reduced and the temperature unevenness at the time of heating the wafer is liable to be caused. If the through holes are unevenly arranged on the wafer mounting surface, the strength of the plate-shaped jig is reduced, and three or more through holes are arranged on the same straight line in the radial direction of the wafer surface. When it is provided, the strength of the plate-shaped jig is similarly reduced. This is because when the holes are aligned on the same straight line, the cross-sectional area becomes smaller in that region, and when the same force acts, the cross-sectional area becomes smaller, so that the stress becomes larger. Since the deflection is proportional to the stress, the deflection will be large under the above conditions.
【００３６】本発明で用いる上記プレート状治具の、ウ
エハ載置面以外の形状は、本発明の半導体ウエハ加熱処
理用装置に搭載可能な形状であれば特に限定されるもの
ではなく、該プレ−トを搭載する装置構造に合わせて適
宜設定して良い。このようなプレート状治具の外形形状
として、例えば図１に示したような凹曲面皿形形状（カ
ップ形状）のプレ−ト治具２や、図３に示したような上
面に凹曲面形状が形成され底面が平らな凹面・平面型形
状のウエハ載置用プレ−ト等を例示することができる。The shape of the plate-shaped jig used in the present invention other than the wafer mounting surface is not particularly limited as long as it can be mounted on the semiconductor wafer heating apparatus of the present invention. May be set appropriately in accordance with the structure of the device on which the port is mounted. As the outer shape of such a plate-shaped jig, for example, a plate jig 2 having a concave curved dish shape (cup shape) as shown in FIG. 1 or a concave curved surface shape as shown in FIG. A concave / planar wafer mounting plate having a flat bottom surface can be exemplified.
【００３７】加熱処理時にウエハを温度ムラなく均一に
加熱昇温する観点からは、構成材がプレ−ト全体でほぼ
等しい適正断面厚ｔを有し、熱容量が過大でないカップ
形状（皿形）のプレ−ト治具２が好ましい。凹面・平面
型形状の治具（図３に示した治具）の場合は、治具の周
縁部と中奥部ではその厚さの相違に基づく熱容量の差が
若干有るため、これに半導体ウエハを載置し熱処理した
際に、ウエハの面内温度分布に多少の不均一性を生ずる
可能性がある。このため、上記凹面・平面型形状のプレ
ート状治具（図３に示した治具）の場合には、治具上面
の凹曲面形状を、載置ウエハ周縁の接点位置と最深部と
の高低差が２０乃至２００μｍとなるように形成し、且
つ、該治具の周縁部高さ（厚さ）を１．２乃至１．５ｍ
ｍ、即ち、変形を防止するため治具中央部肉の厚さが１
ｍｍ以上となるように形成することが好ましい。また、
プレ−ト状治具を構成する材料としては、通常この種の
治具に用いられる材料、例えば、石英ガラス、炭化ケイ
素（ＳｉＣ）コ−トのシリコン（Ｓｉ）含浸炭化ケイ
素、単結晶シリコン、多結晶シリコン、ＣＶＤ−ＳｉＣ
膜材等を挙げることができる。これらの内では、シリコ
ンが好ましく、特に単結晶シリコンが好ましい。特に、
被処理半導体ウエハがシリコンウエハである場合には、
プレート状治具２の、少なくともウエハ載置面部分はシ
リコン単結晶で形成されていることが、熱膨張率や硬度
等の物性が同一であるためウエハを傷つけたりすること
がなく、また、汚染させたりすることがなく好ましい。
なお、熱膨張率の観点からは特に、シリコン単結晶単体
であることが最も好ましい。From the viewpoint of uniformly heating and raising the temperature of the wafer without temperature unevenness during the heat treatment, the component has a cup-shaped (dish-shaped) shape having substantially the same appropriate cross-sectional thickness t over the entire plate and not having an excessive heat capacity. Plate jig 2 is preferred. In the case of a jig having a concave / planar shape (the jig shown in FIG. 3), there is a slight difference in heat capacity between the peripheral portion and the innermost portion of the jig due to the difference in thickness thereof. When the wafer is placed and heat-treated, there is a possibility that the temperature distribution in the surface of the wafer may have some non-uniformity. For this reason, in the case of the above-mentioned concave / planar plate-shaped jig (the jig shown in FIG. 3), the concave curved surface shape of the jig upper surface is set to the height between the contact position of the mounting wafer peripheral edge and the deepest portion. The jig is formed so that the difference is 20 to 200 μm, and the height (thickness) of the periphery of the jig is 1.2 to 1.5 m.
m, that is, the thickness of the jig center portion is 1 to prevent deformation.
mm. Also,
Examples of the material constituting the plate-shaped jig include materials commonly used for this type of jig, such as quartz glass, silicon carbide (SiC) coated silicon (Si) impregnated silicon carbide, single crystal silicon, and the like. Polycrystalline silicon, CVD-SiC
Film materials and the like can be mentioned. Of these, silicon is preferred, and single crystal silicon is particularly preferred. In particular,
When the semiconductor wafer to be processed is a silicon wafer,
Since at least the wafer mounting surface of the plate-shaped jig 2 is formed of silicon single crystal, since the physical properties such as the coefficient of thermal expansion and the hardness are the same, the wafer is not damaged, and the contamination is prevented. It is preferable because it is not performed.
In addition, from the viewpoint of the coefficient of thermal expansion, it is most preferable that the silicon single crystal is used alone.
【００３８】また図２に示したプレート状治具２は、特
にその形成材料がシリコンからなる場合、プレ−ト材の
断面厚さｔは１．０乃至１．５ｍｍの範囲にあることが
好ましい。プレート状治具の厚さが、１．０ｍｍを下回
る場合は、プレ−ト状治具２を縦型ウエハボート形式の
支持具で支持した際、支持された部分及びその周辺が盛
り上がり、前記ウエハ載置面に局所的な凹凸を生じさせ
る。その結果、前記凹凸が載置したウエハと接し、ウエ
ハにスリップを発生させる。一方、厚さが１．５ｍｍを
越える場合には、プレート状治具の熱容量が大きくな
り、ウエハの面内温度不均一化が生じやすくなる。な
お、上記プレ−ト治具が、例えば、図３に示した凹面・
平面型形状のプレ−ト治具２の場合は、その最薄部即ち
面中央部の厚さｔを上記の断面厚さとする。In the case of the plate-shaped jig 2 shown in FIG. 2, the thickness t of the plate is preferably in the range of 1.0 to 1.5 mm, particularly when the material of the jig is made of silicon. . When the thickness of the plate-shaped jig is less than 1.0 mm, when the plate-shaped jig 2 is supported by a vertical wafer boat type support, the supported portion and its periphery are raised, and the wafer Local unevenness is generated on the mounting surface. As a result, the irregularities come into contact with the placed wafer, causing slip on the wafer. On the other hand, when the thickness exceeds 1.5 mm, the heat capacity of the plate-shaped jig increases, and the in-plane temperature of the wafer tends to be non-uniform. Note that the plate jig has, for example, a concave surface shown in FIG.
In the case of the plate jig 2 having a flat shape, the thickness t of the thinnest part, that is, the center part of the surface is set to the above-mentioned cross-sectional thickness.
【００３９】被処理ウエハを載置したプレ−ト状治具
は、所定の支持部材を有する支持具で支持され、本発明
の半導体ウエハ加熱処理用装置を構成して、該装置内に
収容される。本発明において、プレ−ト状治具を収容す
る支持具は、該プレ−ト状治具を支持する支持手段を備
えた装置であれば特に限定されるものではなく、ウエハ
の処理目的に応じて適宜選択されて良い。The plate-shaped jig on which the wafer to be processed is mounted is supported by a support having a predetermined support member, and constitutes an apparatus for heating a semiconductor wafer of the present invention, and is accommodated in the apparatus. You. In the present invention, the support for accommodating the plate-shaped jig is not particularly limited as long as it is a device provided with a support means for supporting the plate-shaped jig, and may be selected depending on the purpose of processing a wafer. May be appropriately selected.
【００４０】例えば、エピタキシャル成長装置等の処理
装置の場合には、図５（ａ）、（ｂ）に示すような突起
状支持部材４ａ上で支持されたウエハ載置用プレート治
具２をベルジャー４ｂ内に収容するサセプター４を挙げ
ることができる。即ち、サセプタ−４の上には３つの突
起状のプレ−ト支持部材４ａが設けられ、そのプレ−ト
支持部材４ａの上に図１に示したカップ型（皿型）のプ
レ−ト治具２が載せられる。前記突起４ａはウエハ載置
用プレ−ト治具２の中心に対して対象に１２０°の間隔
をもって形成されている。For example, in the case of a processing apparatus such as an epitaxial growth apparatus, a wafer mounting plate jig 2 supported on a projecting support member 4a as shown in FIGS. And a susceptor 4 housed therein. That is, three protruding plate supporting members 4a are provided on the susceptor-4, and the cup-shaped (dish-shaped) plate jig shown in FIG. 1 is provided on the plate supporting members 4a. The tool 2 is placed. The projections 4a are formed at an interval of 120 ° with respect to the center of the plate jig 2 for mounting a wafer.
【００４１】一方、縦型ウエハボ−トのような複数のウ
エハを多段に搭載する形式の支持治具を具備する半導体
ウエハ加熱処理用装置の場合は、例えば、図４に示した
ようなプレート状治具の支持手段を多段に備えたものを
例示することができる。図４に示した縦型ウエハボ−ト
状の支持具５は、この支柱（連結部材）５ａから突出し
た広幅のプレ−ト支持部材５ｂを備えている。前記プレ
−ト状治具が、前記プレ−ト支持部材５ｂに多段載置さ
れる。なお、図４は縦型の熱処理炉の側面断面図であっ
て、図中６は炉芯管、７はヒ−タを示している。On the other hand, in the case of an apparatus for heating a semiconductor wafer having a supporting jig of a type in which a plurality of wafers are mounted in multiple stages, such as a vertical wafer boat, for example, a plate shape as shown in FIG. An example in which the jig support means is provided in multiple stages can be exemplified. The vertical wafer boat-shaped support member 5 shown in FIG. 4 includes a wide plate support member 5b protruding from the support (connecting member) 5a. The plate-shaped jig is mounted on the plate supporting member 5b in multiple stages. FIG. 4 is a side sectional view of a vertical heat treatment furnace, in which 6 denotes a furnace core tube and 7 denotes a heater.
【００４２】プレ−ト状治具を、支持具のプレ−ト支持
部で支持する場合は、その底面において、プレ−ト状治
具２の中心に対称な少なくとも３点で支持されることが
好ましく、特に該３支持点が、ウエハ載置プレ−ト状治
具の中心から半径方向に該半径の０．６乃至０．８倍の
距離隔たって位置することが好ましい。上記のようにプ
レ−ト状治具を支持することにより、従来、半導体ウエ
ハ加熱処理用治具において、ウエハ載置用プレ−トの外
周部での波状変形の発生を抑制できる。When the plate-shaped jig is supported by the plate support portion of the support, it may be supported at at least three points symmetrical with the center of the plate-shaped jig 2 on the bottom surface. Preferably, the three support points are located at a distance of 0.6 to 0.8 times the radius in the radial direction from the center of the wafer mounting plate-shaped jig. By supporting the plate-shaped jig as described above, it is possible to suppress the occurrence of wavy deformation at the outer peripheral portion of the wafer mounting plate in the conventional semiconductor wafer heating processing jig.
【００４３】また、前記したように図４に示された突起
状支持部材５ｂに替えて、図７に示すようなリング状の
支持部材５ｃとしても良く、また前記リング状の支持部
材５ｃの一部を切欠いた馬蹄形状に支持部材を形成して
も良い。なお、前記リング状の支持部材は、図８、９に
示すような枚葉式の熱処理装置用にも適用することがで
きる。すなわち、基体８の上面にリング状の支持部材８
ａを設け、プレ−ト状治具２を載置しても良い。図８は
図９のＡ−Ａ断面図であり、図９は平面図である。ま
た、図１０（ａ）、（ｂ）に示すように、前記リング状
の支持部材８ａの一部を切欠いた馬蹄形状に支持部材を
形成しても良い。このとき、図１０（ａ）に示すように
その切欠き部分の大きさは、その中心角θが３０°以下
が好ましい。これはウエハ面内に対して温度が不均一に
ならないようにするためであり、前記３０°が最大値で
あり、より好ましくは１０°以下が良い。Further, instead of the projecting support member 5b shown in FIG. 4 as described above, a ring-shaped support member 5c as shown in FIG. 7 may be used. The support member may be formed in a horseshoe shape with a notch. The ring-shaped support member can be applied to a single-wafer heat treatment apparatus as shown in FIGS. That is, the ring-shaped support member 8 is
a, and the plate-shaped jig 2 may be placed. FIG. 8 is a sectional view taken along line AA of FIG. 9, and FIG. 9 is a plan view. Further, as shown in FIGS. 10A and 10B, the ring-shaped support member 8a may be formed in a horseshoe shape with a part of the support member 8a cut away. At this time, as shown in FIG. 10A, the size of the cutout portion is preferably such that the central angle θ is 30 ° or less. This is to prevent the temperature from becoming non-uniform with respect to the wafer surface, and the above-mentioned 30 ° is the maximum value, and more preferably 10 ° or less.
【００４４】また前記したように支持部材の形状は、特
に限定されるものではないが、該治具が当接する支持部
材の熱容量は、可能な限り小さいことが好ましいため、
支持部材は円形断面の棒状形状が好ましく、プレ−ト治
具と支持部材は点接触となるようになすのが好ましい。
支持点数は３点以上でも構わないが、縦形ボ−ト形式の
場合、棒状の連結部材の本数をその分だけ増やす必要が
あり、コストの増大を招くため、３本が好ましい。また
枚葉式の場合においても３点以上の支持点を設けても良
いが、支持部材あるいは平板状の寸法精度上、結局３点
支持となるため、３点支持が好ましい。As described above, the shape of the support member is not particularly limited, but the heat capacity of the support member with which the jig contacts is preferably as small as possible.
The support member preferably has a rod-like shape with a circular cross section, and the plate jig and the support member are preferably in point contact.
The number of supporting points may be three or more. However, in the case of the vertical boat type, the number of rod-shaped connecting members needs to be increased by that much, and the cost is increased. In the case of a single-wafer type, three or more support points may be provided. However, three-point support is preferable because the support member or a flat plate is ultimately three-point support in terms of dimensional accuracy.
【００４５】また、単結晶シリコンインゴットから作製
される単結晶シリコンウエハは、半導体デバイスの基材
として代表的なものであるが、このシリコンウエハの内
でも、特に、格子間酸素濃度［Ｏｉ］が低い低格子間酸
素濃度ＣＺ−シリコンウエハ（通常［Ｏｉ］濃度が１．
３×１０18 atoms/cm3 (old ASTM) 以下）は、加熱処理
等のウエハ処理時に、特にスリップ発生し易く、また発
生したスリップが大きくなり易い傾向を有することが知
られている。本発明の半導体ウエハ加熱処理用のプレー
ト状治具は、このような低格子間酸素濃度ＣＺ−シリコ
ンウエハの加熱処理用に特に有効に適用できる。A single-crystal silicon wafer produced from a single-crystal silicon ingot is a typical substrate for semiconductor devices. Among these silicon wafers, the interstitial oxygen concentration [Oi] is particularly high. Low low interstitial oxygen concentration CZ-silicon wafer (usually [Oi] concentration is 1.
3 × 10 18 atoms / cm 3 (old ASTM) or less), during wafer processing such as heat treatment, it is known that in particular a slip generated easily, also tends slip increases occurred. The plate-shaped jig for heat treatment of a semiconductor wafer of the present invention can be particularly effectively applied to heat treatment of such a low interstitial oxygen concentration CZ-silicon wafer.
【００４６】[0046]
【実施例】「実施例１」シリコン単結晶インゴットから
切り出した後、グラインダーによる研磨加工及びエッチ
ング加工により、周縁が円形、中央部に最深部を有する
凹球曲面形状のウエハ載置面（上面）を備え、下面が平
面の図３に示すような凹面・平面型形状のプレート状治
具を作製し、このプレート状治具をアンモニア水と過酸
化水素から成る洗浄水を用いて洗浄した。なお、該プレ
ート状治具のウエハ載置面（上面）の直径は３０３ｍ
ｍ、ウエハ周縁との接点位置から最深部までの高低差は
２０μｍ、ウエハ載置面の中心線平均粗さＲａ０．５μ
ｍ、治具の周縁部厚さ１．２ｍｍであった。また、ウエ
ハ載置面には、その中心及び半径の０．６５倍の位置に
６０°間隔で６個、すなわち、合計で７個の貫通孔を形
成した。次に示すサンプルウエハを用意し、上記プレー
ト状治具の載置面（上面）上に図３（ｂ）に示す状態に
載置した。サンプルウエハとしては、直径３００ｍｍ、
面方位［１００］、Ｐ型、抵抗ρ＝９〜１４Ω・ｃｍの
シリコン単結晶ウエハを用いた。なお、このサンプルウ
エハは、赤外吸収法により事前に測定した格子間酸素
［Ｏｉ］濃度が、１．１〜１．２×１０18 atoms/cm3
(old ASTM) であった。[Example 1] After cutting out from a silicon single crystal ingot, a wafer mounting surface (upper surface) of a concave spherical curved shape having a circular periphery and a deepest portion in the center by polishing and etching with a grinder. A plate-shaped jig having a concave / planar shape as shown in FIG. 3 having a flat lower surface was prepared, and the plate-shaped jig was washed with washing water composed of ammonia water and hydrogen peroxide. The diameter of the wafer mounting surface (upper surface) of the plate-shaped jig is 303 m.
m, the height difference from the contact position with the wafer periphery to the deepest part is 20 μm, and the center line average roughness Ra of the wafer mounting surface Ra 0.5 μm
m, and the peripheral part thickness of the jig was 1.2 mm. Further, six through holes, ie, a total of seven through holes were formed at 60 ° intervals at the center and 0.65 times the radius of the wafer mounting surface. A sample wafer shown below was prepared and mounted on the mounting surface (upper surface) of the plate-shaped jig in a state shown in FIG. 3B. As a sample wafer, diameter 300mm,
A silicon single crystal wafer having a plane orientation of [100], a P type, and a resistance ρ = 9 to 14 Ω · cm was used. The sample wafer had an interstitial oxygen [Oi] concentration of 1.1 to 1.2 × 10 18 atoms / cm 3 measured in advance by an infrared absorption method.
(old ASTM).
【００４７】上記サンプルウエハを載置したプレート状
治具２５個を縦方向多段に支持する支持具（縦型ウエハ
ボート）に搭載した。また、この支持治具の上下端部に
は各々３枚づつダミーウエハを載置した。前記支持治具
は、図４に示したものと同等であり、シリコン製で３点
支持式のものを用いた。なお、この支持治具は、ウエハ
を載置した前記プレート状治具の底面部を中心から半径
の０．８倍の位置で該中心に対称に３点で支持するよう
にスリット（支持部材）が長く形成されている。The 25 plate-shaped jigs on which the sample wafers were mounted were mounted on a support (vertical wafer boat) that supported multiple stages in the vertical direction. Further, three dummy wafers were placed on the upper and lower ends of this support jig, respectively. The support jig was the same as that shown in FIG. 4, and a three-point support type made of silicon was used. The supporting jig is provided with a slit (supporting member) so as to support the bottom of the plate-shaped jig on which the wafer is mounted at three points symmetrically with respect to the center at a position 0.8 times the radius from the center. Are formed long.
【００４８】上記サンプルウエハ載置プレート状治具を
上記支持具に搭載した半導体ウエハ加熱処理用装置を用
いてウエハの熱処理を行い、その際のスリップ発生状況
の評価を実施した。なお、熱処理は、７００℃で炉入れ
した後、８℃／ｍｉｎで１０００℃迄昇温し、その後、
２℃／ｍｉｎで１２００℃迄昇温、この１２００℃の状
態で１時間保持し、２℃／ｍｉｎで１０００℃迄降温
し、その後８℃／ｍｉｎで７００℃迄降温し、炉出しす
るシーケンスで行った。なお、炉内に水素ガスを２０ｌ
／ｍｉｎで流入させ、水素雰囲気とした。上記熱処理後
のサンプルウエハのスリップ発生状態を、Ｘ−線トポグ
ラフィー（ｌａｎｇ法）を用いて、測定評価した。な
お、Ｘ−線ターゲットには、Ｍｏを用い、加速電圧５５
ｋＶ、電流２９０ｍＡの操作条件で、２５枚すべてにつ
いて測定を実施した。回折面はスリップ観察に最も適し
ている４００回折とした。その評価結果を表１及び図１
１に示す。なお、いずれの場合もスリップの位置に多少
の違いがあるが、２５枚のほとんどが同様なスリップ発
生状況であったため、その一例を図１１に示した。The wafer was subjected to a heat treatment using a semiconductor wafer heating apparatus in which the sample wafer mounting plate-shaped jig was mounted on the support, and the occurrence of slip at that time was evaluated. In the heat treatment, after the furnace was placed at 700 ° C., the temperature was raised to 1000 ° C. at 8 ° C./min.
The temperature is raised to 1200 ° C. at 2 ° C./min, maintained at this 1200 ° C. for 1 hour, cooled to 1000 ° C. at 2 ° C./min, and then lowered to 700 ° C. at 8 ° C./min and taken out of the furnace. went. In addition, 20 l of hydrogen gas was introduced into the furnace.
/ Min to make a hydrogen atmosphere. The state of occurrence of slip on the sample wafer after the heat treatment was measured and evaluated using X-ray topography (Lang method). In addition, Mo was used for the X-ray target, and the acceleration voltage 55
The measurement was performed on all 25 sheets under operating conditions of kV and current of 290 mA. The diffraction plane was 400 diffractions most suitable for slip observation. Table 1 and FIG.
It is shown in FIG. In each case, there is a slight difference in the position of the slip. However, since almost all of the 25 sheets have the same slip occurrence state, an example thereof is shown in FIG.
【００４９】「実施例２、３」ウエハ載置面におけるウ
エハ周縁との接点位置から最深部までの高低差が１４０
μｍ（実施例２）、２００μｍ（実施例３）であり、周
縁部厚さが１．３ｍｍ（実施例２）、１．５ｍｍ（実施
例３）である以外は実施例１と同様に作製したプレート
状治具を用い、実施例１と同様の縦型ウエハボート形式
の支持具に、実施例１と同様にしてプレート状治具を載
置し、実施例１と同様に熱処理した後、ウエハのスリッ
プ発生状態を測定評価した。その評価結果を表１及び図
１１に示す。[Embodiments 2 and 3] The height difference from the contact point with the peripheral edge of the wafer on the wafer mounting surface to the deepest portion is 140.
μm (Example 2) and 200 μm (Example 3), and were manufactured in the same manner as Example 1 except that the peripheral edge thickness was 1.3 mm (Example 2) and 1.5 mm (Example 3). Using a plate-shaped jig, a plate-shaped jig is placed on a vertical wafer boat-type support similar to that of the first embodiment in the same manner as in the first embodiment, and heat-treated in the same manner as in the first embodiment. The state of occurrence of slip was measured and evaluated. The evaluation results are shown in Table 1 and FIG.
【００５０】「比較例１」実施例１で使用したと同様の
シリコン単結晶インゴットから切り出し、グラインダー
による研磨加工及びエッチング加工により、上、下面が
互いに平行平面の円盤状ウエハ載置用プレート状治具
（厚さ０．９ｍｍ、上面中心線平均粗さＲａ０．５μ
ｍ）を製作し、これを実施例１と同様の支持具に、実施
例１と同様にして載置し、実施例１と同様に熱処理した
後、ウエハのスリップ発生状態を測定評価した。その結
果を表１及び図１１に示す。[Comparative Example 1] A disk-shaped wafer mounting plate having an upper and lower surface parallel to each other was cut out from the same silicon single crystal ingot as used in Example 1 and polished and etched by a grinder. Tool (thickness 0.9mm, upper surface center line average roughness Ra 0.5μ)
m) was manufactured and mounted on the same support as in Example 1 in the same manner as in Example 1. After heat treatment as in Example 1, the state of slip generation of the wafer was measured and evaluated. The results are shown in Table 1 and FIG.
【００５１】「比較例２」ウエハ載置面におけるウエハ
周縁との接点位置から最深部までの高低差が２２０μ
ｍ、周縁部厚さ１．７ｍｍである以外は実施例１と同様
に作製したプレート状治具を用い、実施例１と同様の支
持具に、実施例１と同様に搭載し、同様に熱処理した
後、ウエハのスリップ発生状態を測定評価した。その評
価結果を表１及び図１１に示す。[Comparative Example 2] The height difference from the contact point with the peripheral edge of the wafer on the wafer mounting surface to the deepest portion was 220 μm.
m, using a plate-shaped jig prepared in the same manner as in Example 1 except that the peripheral edge thickness was 1.7 mm, mounted on a support similar to that in Example 1, and heat-treated similarly. After that, the slip occurrence state of the wafer was measured and evaluated. The evaluation results are shown in Table 1 and FIG.
【００５２】「実施例４」実施例１と同様のシリコン単
結晶インゴットから、周縁が円形、中央部に最深部を有
する凹曲面形状の上面を備え、該上面に平行する湾曲凹
面状下面を有する凹曲面皿形形状のプレ−ト状治具を作
製し、この治具をアンモニア水と過酸化水素からなる洗
浄水を用いて洗浄した。なお、該プレート状治具の上面
（ウエハ載置面）の直径は３０３ｍｍ、ウエハ周縁との
接点位置から最深部までの高低差は２０μｍ、ウエハ載
置面の中心線平均粗さＲａ０．５μｍ、厚さ１．０ｍｍ
であった。このプレート状治具を用い、実施例１と同様
の支持具に、治具底面部を中心から半径の０．６倍の位
置で対称３点支持した以外は実施例１と同様にして載置
し、実施例１と同様に熱処理した後、ウエハのスリップ
発生状態を測定評価した。その評価結果を表１及び図１
１に示す。Example 4 A silicon single crystal ingot similar to that of Example 1 has a concave upper surface with a concave curved surface shape having a circular periphery and a deepest portion at the center, and a curved concave lower surface parallel to the upper surface. A plate-like jig having a concave curved dish shape was prepared, and this jig was washed with washing water comprising ammonia water and hydrogen peroxide. The diameter of the upper surface (wafer mounting surface) of the plate-shaped jig is 303 mm, the height difference from the contact point with the wafer periphery to the deepest portion is 20 μm, the center line average roughness Ra of the wafer mounting surface is Ra 0.5 μm, Thickness 1.0mm
Met. Using this plate-shaped jig, the same mounting as in the first embodiment was carried out in the same manner as in the first embodiment except that the jig bottom was supported at three symmetrical points at a position 0.6 times the radius from the center. Then, after the heat treatment was performed in the same manner as in Example 1, the slip generation state of the wafer was measured and evaluated. Table 1 and FIG.
It is shown in FIG.
【００５３】「実施例５、６」高低差、厚さ、上面中心
平均粗さＲａが夫々表１に記載した値である以外は実施
例４と同様の凹曲面皿形プレート状治具を作製し、これ
を実施例４と同様にしてウエハのスリップ発生状態を測
定評価した。その評価結果を表１及び図１１に示す。[Examples 5 and 6] A concave-curved dish-shaped plate-shaped jig similar to that of Example 4 was prepared except that the height difference, thickness, and upper surface center average roughness Ra were the values shown in Table 1, respectively. Then, in the same manner as in Example 4, the state of occurrence of slip on the wafer was measured and evaluated. The evaluation results are shown in Table 1 and FIG.
【００５４】「比較例３乃至７」高低差、厚さ、上面中
心線平均粗さＲａが夫々表１に記載した値である以外は
実施例４と同様の凹曲面皿形プレート状治具を作製し、
縦型ウエハボート形式の治具搭載装置に、治具底面部を
中心から夫々表１に記載した半径の倍数位置で支持した
以外は実施例４と同様にして載置し（ただし、比較例５
のみは４点対称支持）、実施例４と同様に熱処理した
後、ウエハのスリップ発生状態を測定評価した。その評
価結果を表１及び図１１に示す。Comparative Examples 3 to 7 A concave-curved dish-shaped plate-like jig similar to that of Example 4 was used except that the height difference, thickness, and upper surface center line average roughness Ra were the values shown in Table 1, respectively. Made,
The jig was mounted on a vertical wafer boat type jig mounting apparatus in the same manner as in Example 4 except that the bottom of the jig was supported from the center at multiples of the radius shown in Table 1, respectively.
Only four points were symmetrically supported), and after the heat treatment in the same manner as in Example 4, the state of occurrence of slip of the wafer was measured and evaluated. The evaluation results are shown in Table 1 and FIG.
【００５５】「比較例８」周縁部厚さ１．０ｍｍである
以外は実施例１と同様に作製したプレート状治具を用
い、実施例１と同様の支持具に、治具底面部を中心から
半径の０．６倍の位置で対称３点支持した以外は実施例
１と同様にして載置し、実施例１と同様に熱処理した
後、ウエハのスリップ発生状態を測定評価した。その評
価結果を表１及び図１１に示す。[Comparative Example 8] A plate-like jig prepared in the same manner as in Example 1 except that the peripheral edge thickness was 1.0 mm was used. The wafer was mounted in the same manner as in Example 1 except that it was supported at three symmetrical points at a position 0.6 times the radius from the above. After heat treatment was performed in the same manner as in Example 1, the slip generation state of the wafer was measured and evaluated. The evaluation results are shown in Table 1 and FIG.
【００５６】[0056]
【表１】 [Table 1]
【００５７】図１１から明らかなように、実施例例１〜
３では、被処理ウエハ２５枚中１０〜１３枚において、
ウエハの周辺部に１〜２本のスリップが観察された。し
かしながら、１０ｍｍ以上のスリップはまったく観察さ
れなかった。なお、残りの被処理ウエハのいずれにもス
リップはまったく観察されなかった。また、実施例４〜
５では、２５枚の被処理ウエハのすべてについて、スリ
ップはまったく観察されなかった。一方、比較例１〜
５、７、８では、ウエハの周辺部において１０ｍｍ以上
のスリップが高密度に存在する部分が、数か所観察され
た。また比較例６ではウエハの略直径方向にへき開が観
察された。以上のように、実施例においては、特定形状
のウエハ載置面を備え、これに被処理ウエハを載置して
加熱処理するため、ウエハ内にスリップ等の欠陥の発生
を防止でき、あるいは抑制できることが認められた。As is clear from FIG.
In 3, in 10 to 13 wafers out of 25 wafers to be processed,
One or two slips were observed around the wafer. However, no slip of 10 mm or more was observed. No slip was observed on any of the remaining wafers to be processed. Examples 4 to
In No. 5, no slip was observed for all of the 25 wafers to be processed. On the other hand, Comparative Examples 1 to
In 5, 7, and 8, several portions where slips of 10 mm or more were present at high density in the peripheral portion of the wafer were observed. Further, in Comparative Example 6, cleavage was observed in a substantially diameter direction of the wafer. As described above, in the embodiment, a wafer mounting surface of a specific shape is provided, and a wafer to be processed is mounted on the wafer mounting surface and heated, so that occurrence of defects such as slips in the wafer can be prevented or suppressed. It was recognized that it was possible.
【００５８】[0058]
【発明の効果】本発明の半導体ウエハ加熱処理用治具
は、上述した特定形状のウエハ載置面を備え、これに被
処理ウエハを載置して加熱処理するため、例え大口径の
ウエハを高温熱処理する場合においてもウエハ内にスリ
ップ等の欠陥を発生させることがなく、良好な品質の半
導体デバイスを安定して歩留まり良く製造することがで
きる。The jig for heating a semiconductor wafer according to the present invention is provided with a wafer mounting surface having the above-described specific shape, and a wafer to be processed is mounted on the jig for heat treatment. Even when high-temperature heat treatment is performed, defects such as slips are not generated in the wafer, and semiconductor devices of good quality can be stably manufactured with high yield.
【図１】図１は、本発明にかかる半導体ウエハ加熱処理
用治具の一実施形態を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of a jig for heating a semiconductor wafer according to the present invention.
【図２】図２は、図１の半導体ウエハ加熱処理用治具に
ウエハを載置した状態を示す図、（ａ）は加熱前の状態
を示す断面図、（ｂ）は加熱処理状態におけるウエハ状
態を示す断面図である。2A and 2B are diagrams showing a state in which a wafer is placed on a jig for heating a semiconductor wafer in FIG. 1, FIG. 2A is a cross-sectional view showing a state before heating, and FIG. It is sectional drawing which shows a wafer state.
【図３】図３は、本発明にかかる半導体ウエハ加熱処理
用治具の他の一実施形態を示す斜視図である。FIG. 3 is a perspective view showing another embodiment of a jig for heating a semiconductor wafer according to the present invention.
【図４】図４は、本発明にかかる半導体ウエハ加熱処理
用装置を炉内に収容した状態を示した図である。FIG. 4 is a view showing a state in which the apparatus for heating a semiconductor wafer according to the present invention is accommodated in a furnace.
【図５】図５は、本発明にかかる単数のプレート状治具
（半導体ウエハ加熱処理用治具）を支持した枚葉式の、
本発明にかかる半導体ウエハ加熱処理用装置を炉内に収
容した態様を示す図であって、（ａ）は側面図、（ｂ）
は平面図である。FIG. 5 is a single-wafer plate supporting a single plate-shaped jig (semiconductor wafer heating processing jig) according to the present invention;
It is a figure which shows the aspect which accommodated the apparatus for semiconductor wafer heat processing concerning this invention in the furnace, (a) is a side view, (b)
Is a plan view.
【図６】図６は、半導体ウエハを支持する従来の縦型ウ
エハボ−トを示す図である。FIG. 6 is a diagram showing a conventional vertical wafer boat supporting a semiconductor wafer.
【図７】図７は、本発明のプレ−ト状治具（半導体ウエ
ハ加熱処理用治具）を多段搭載支持する支持具を示した
斜視図である。FIG. 7 is a perspective view showing a support for mounting and supporting a plate-shaped jig (semiconductor wafer heating processing jig) of the present invention in multiple stages.
【図８】図８は、単数のプレート状治具をリング状の支
持部材によって支持した枚葉式の、本発明にかかる半導
体ウエハ加熱処理用装置を示す図９のＡ−Ａ断面図であ
る。FIG. 8 is a sectional view taken along the line AA of FIG. 9 showing a single-wafer type semiconductor wafer heating apparatus according to the present invention, in which a single plate-shaped jig is supported by a ring-shaped support member. .
【図９】図９は、図８に示す半導体ウエハ加熱処理用装
置の平面図である。FIG. 9 is a plan view of the semiconductor wafer heating processing apparatus shown in FIG. 8;
【図１０】図１０は、図８、図９に示したリング状の支
持部材を馬蹄形状とした半導体ウエハ加熱処理用装置で
ある。FIG. 10 is an apparatus for heating a semiconductor wafer in which the ring-shaped support member shown in FIGS. 8 and 9 has a horseshoe shape.
【図１１】図１１は、実施例・比較例における、熱処理
後のサンプルウエハのｘ−線トポグラフによる状態観察
図である。FIG. 11 is an x-ray topographic state observation diagram of a sample wafer after heat treatment in Examples and Comparative Examples.
１ ウエハ ２ プレート状治具 ４ 支持具（サセプタ−） ４ａ 突起状支持部材 ４ｂ ベルジャー ５ 支持具（縦型ウエハボ−ト） ５ａ 連結部材（支柱） ５ｂ 支持部材 ５ｃ 支持部材 ６ 炉心管 ７ ヒータ ８ 基体 ８ａ 支持部材 １０ 連結部材（支柱） １１ 溝（スリット） １２ ウエハ DESCRIPTION OF SYMBOLS 1 Wafer 2 Plate-shaped jig 4 Supporter (susceptor) 4a Projection support member 4b Bell jar 5 Supporter (vertical wafer boat) 5a Connecting member (post) 5b Support member 5c Support member 6 Furnace tube 7 Heater 8 Base 8a Supporting member 10 Connecting member (post) 11 Groove (slit) 12 Wafer
フロントページの続き (72)発明者 斎藤 雅美 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 (72)発明者 大森 真紀子 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 (72)発明者 重野 能徳 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 (72)発明者 白井 宏 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 (72)発明者 天野 正実 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 (72)発明者 辛 平 神奈川県秦野市曽屋30番地 東芝セラミッ クス株式会社開発研究所内 (72)発明者 田中 順二 新潟県北蒲原郡聖籠町束港６−861−５ 新潟東芝セラミックス株式会社内 Ｆターム(参考） 5F031 CA02 HA62 HA64 MA28 5F045 AA20 AD11 AD12 AD13 AD14 AD15 AD16 BB13 DP19 EM02 EM08 EM09 Continued on the front page (72) Inventor Masami Saito 30 Soya, Hadano-shi, Kanagawa Prefecture, Toshiba Ceramics Co., Ltd. (72) Inventor Makiko Omori 30-Soya, Hadano-shi, Kanagawa Prefecture, Toshiba Ceramics Co., Ltd. (72) Inventor Noritori Shigeno 30 Soya, Hadano-shi, Kanagawa Prefecture, in the Research Laboratory of Toshiba Ceramics Co., Ltd. (72) Inventor Hiroshi Shirai 30-city Soya, Hadano-shi, Kanagawa Prefecture, in the Research Laboratory of Toshiba Ceramics Co., Ltd. 30 Soya, Hadano-shi, Kanagawa Prefecture, Toshiba Ceramics Co., Ltd. (72) Inventor Shinpira 30-Soya, Hadano-shi, Kanagawa Prefecture, Toshiba Ceramics Co., Ltd. (72) Inventor Junji Tanaka St. Kita-Kambara-gun, Niigata Prefecture 6-861-5 Kagomachi Tsukako Niigata Toshiba Ceramics Co., Ltd. F-term (reference) 5F031 CA02 HA62 HA64 MA28 5F045 AA20 AD11 AD12 AD13 AD14 AD15 AD16 BB13 DP19 EM02 EM08 EM09
Claims (10)
熱処理するプレート状の半導体ウエハ加熱処理用治具に
おいて、 前記上面が、被処理ウエハの直径以上の直径の円形周縁
を有すると共に、中央部に最深部を有する凹曲面形状に
形成され、載置したウエハ周縁との接点位置と前記最深
部との高低差が２０μｍ乃至５００μｍの範囲にあるこ
とを特徴とする半導体ウエハ加熱処理用治具。1. A plate-shaped semiconductor wafer heating jig for mounting and heating a semiconductor wafer on an upper surface thereof, wherein the upper surface has a circular peripheral edge having a diameter equal to or larger than the diameter of a wafer to be processed. A concave portion having a deepest portion at a central portion, wherein a height difference between a contact position with a peripheral edge of the placed wafer and the deepest portion is in a range of 20 μm to 500 μm. Utensils.
な凹曲面形状を有し、厚さが１乃至１．５ｍｍであるこ
とを特徴とする請求項１に記載された半導体ウエハ加熱
処理用治具。2. The semiconductor wafer heating process according to claim 1, wherein a lower surface facing the upper surface has a concave curved shape parallel to the upper surface, and has a thickness of 1 to 1.5 mm. Jig.
乃至２００μｍの範囲にあり、該上面に対向する下面
が、ほぼ平面に形成され、その周縁部厚さが１．２乃至
１．５ｍｍの範囲にあることを特徴とする請求項１に記
載された半導体ウエハ加熱処理用治具。3. The height difference on the upper surface is 20 μm.
2. The method according to claim 1, wherein the lower surface opposite to the upper surface is formed substantially flat, and the peripheral edge thickness is in the range of 1.2 to 1.5 mm. A jig for heating semiconductor wafers.
ける中心線平均粗さＲａが０．３乃至０．８μｍ範囲に
あることを特徴とする請求項２又は請求項３に記載され
た半導体ウエハ加熱処理用治具。4. The semiconductor wafer according to claim 2, wherein a center line average roughness Ra at a contact portion of the upper surface with the semiconductor wafer is in a range of 0.3 to 0.8 μm. Jig for heat treatment.
形成されていることを特徴とする請求項４に記載された
半導体ウエハ加熱処理用治具。5. The jig for heating a semiconductor wafer according to claim 4, wherein a plurality of holes penetrating from the upper surface to the lower surface are formed.
のいずれかに記載の半導体ウエハ加熱処理用治具を単数
もしくは複数搭載した、前記被処理ウエハを加熱処理す
るための半導体ウエハ加熱処理用装置であって、 該装置が、前記治具の下面中心点から半径方向に、該半
径の０．６乃至０．８倍の距離を隔てた位置で前記治具
を支持する支持部材を具備することを特徴とする半導体
ウエハ加熱処理用治具を用いた半導体ウエハ加熱処理用
装置。6. The apparatus according to claim 1, wherein a wafer to be processed is mounted.
An apparatus for heating a semiconductor wafer for heating a wafer to be processed, wherein the apparatus comprises one or more jigs for heating a semiconductor wafer according to any one of the above, A jig for heating a semiconductor wafer, comprising: a support member for supporting the jig at a position spaced apart from the point by a distance of 0.6 to 0.8 times the radius in a radial direction. Equipment for heating semiconductor wafers.
支持が、ほぼ等間隔位置の３点により行われることを特
徴とする請求項６に記載された半導体ウエハ加熱処理用
治具を用いた半導体ウエハ加熱処理用装置。7. The semiconductor wafer heating jig according to claim 6, wherein the lower surface of the semiconductor wafer heating jig is supported at three points at substantially equal intervals. Equipment for heating semiconductor wafers.
を隔てて連結固定する連結部材とを備え、両板間に、半
導体ウエハを載置した複数の前記治具を上下多段に搭
載、支持された半導体ウエハ加熱処理用装置であって、 前記支持部材が、夫々の前記治具を個別に支持できるよ
うに、前記連結部材から多段に突出して設けられている
ことを特徴とする請求項６又は請求項７に記載された半
導体ウエハ加熱処理用治具を用いた半導体ウエハ加熱処
理用装置。8. A top plate, a bottom plate, and a connecting member for connecting and fixing the top and bottom plates at predetermined intervals, and a plurality of the jigs on which semiconductor wafers are mounted are vertically arranged in multiple stages between the two plates. A mounted and supported apparatus for heating a semiconductor wafer, wherein the support member is provided so as to protrude from the connection member in multiple stages so as to individually support each of the jigs. An apparatus for heating a semiconductor wafer using the jig for heating a semiconductor wafer according to claim 6.
設けられた３本の柱状部材からなり、各柱状部材から前
記支持部材を突出させたことを特徴とする請求項８に記
載された半導体ウエハ加熱処理用治具を用いた半導体ウ
エハ加熱処理用装置。9. The connecting member according to claim 8, wherein the connecting member comprises three columnar members provided between the disk-shaped top and bottom plates, and the support member protrudes from each columnar member. An apparatus for heating a semiconductor wafer using the jig for heating a semiconductor wafer described in 1 above.
持し、これを加熱処理する半導体ウエハ加熱処理用装置
であって、前記支持部材が、平板状基材の上面に突出形
成されたものであることを特徴とする請求項６又は請求
項７に記載された半導体ウエハ加熱処理用治具を用いた
半導体ウエハ加熱処理用装置。10. A semiconductor wafer heating apparatus for holding said jig on which a wafer to be processed is mounted and heating said jig, wherein said support member is formed to project from an upper surface of a flat substrate. An apparatus for heating a semiconductor wafer using the jig for heating a semiconductor wafer according to claim 6 or 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7651599A JP4003906B2 (en) | 1999-03-19 | 1999-03-19 | Silicon single crystal semiconductor wafer heat treatment jig and silicon single crystal semiconductor wafer heat treatment apparatus using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7651599A JP4003906B2 (en) | 1999-03-19 | 1999-03-19 | Silicon single crystal semiconductor wafer heat treatment jig and silicon single crystal semiconductor wafer heat treatment apparatus using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000269150A true JP2000269150A (en) | 2000-09-29 |
| JP4003906B2 JP4003906B2 (en) | 2007-11-07 |
Family
ID=13607421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7651599A Expired - Lifetime JP4003906B2 (en) | 1999-03-19 | 1999-03-19 | Silicon single crystal semiconductor wafer heat treatment jig and silicon single crystal semiconductor wafer heat treatment apparatus using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4003906B2 (en) |
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