JPH10319127A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPH10319127A
JPH10319127A JP9132037A JP13203797A JPH10319127A JP H10319127 A JPH10319127 A JP H10319127A JP 9132037 A JP9132037 A JP 9132037A JP 13203797 A JP13203797 A JP 13203797A JP H10319127 A JPH10319127 A JP H10319127A
Authority
JP
Japan
Prior art keywords
wire
detection element
substrate
semiconductor radiation
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9132037A
Other languages
Japanese (ja)
Other versions
JP3713895B2 (en
Inventor
Takeshi Ishikura
剛 石倉
Shigeo Noda
茂雄 野田
Osamu Ueda
治 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP13203797A priority Critical patent/JP3713895B2/en
Publication of JPH10319127A publication Critical patent/JPH10319127A/en
Application granted granted Critical
Publication of JP3713895B2 publication Critical patent/JP3713895B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector that is strong against vibration such as shock and a temperature change and humidity, has a simple structure and has less parts, and has less assembly man-hour. SOLUTION: Alumina wires 4a and 4 are subjected to ultrasonic bonding to a lower electrode 21 and an upper electrode 22 of a detection element 2, and the detection element 2 is adhered and retained on a substrate 1b by an insulation adhesive 3a. The other edge of the alumina wire is subjected to ultrasonic bonding to a pattern 11b for lower electrode and a pattern 12 for upper electrode being formed on each substrate 1b. An electrical connection is secured by wire bonding and the detection element 2 is firmly adhered and retained by the insulation adhesive 3a.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、半導体放射線検
出素子を基板に保持した構造の半導体放射線検出器に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor radiation detector having a structure in which a semiconductor radiation detection element is held on a substrate.

【0002】[0002]

【従来の技術】図4は、従来技術による半導体放射線検
出器(以下では検出器と略称する)の一例における半導
体放射線検出素子(以下では検出素子と略称する)の近
傍の構造を示す断面図である。検出素子2は、例えば高
抵抗率のシリコン単結晶板を用いたpn接合型あるいは
ヘテロ接合型などのダイオードであり、その両面に下部
電極21及び上部電極22をもっている。このダイオードに
逆方向のバイアス電圧を印加して接合部近傍に空乏層を
形成させると、この空乏層の大きな電位勾配が放射線に
よって検出素子2内に発生させられた電子・正孔対を分
離し、分離された電子・正孔対が電気信号として検出さ
れる。
2. Description of the Related Art FIG. 4 is a sectional view showing a structure near a semiconductor radiation detecting element (hereinafter abbreviated as a detecting element) in an example of a conventional semiconductor radiation detector (hereinafter abbreviated as a detector). is there. The detection element 2 is, for example, a pn junction type or a hetero junction type diode using a high resistivity silicon single crystal plate, and has a lower electrode 21 and an upper electrode 22 on both surfaces. When a reverse bias voltage is applied to this diode to form a depletion layer near the junction, a large potential gradient in the depletion layer separates electron-hole pairs generated in the detection element 2 by radiation. The separated electron-hole pairs are detected as electric signals.

【0003】このような検出素子2が、配線パターンが
形成された基板1上に導電性接着剤3によって接着保持
されている。この導電性接着剤3は、検出素子2の下部
電極21と基板1の下部電極用パターン11とを電気的に接
続する役割をも兼ねている。検出素子2の上部電極22と
基板1の上部電極用パターン12とは、超音波ボンディン
グ法によってワイヤボンディングされたアルミ線4によ
って接続されている。下部電極用パターン11及び上部電
極用パターン12は図示されていない検出素子用バイアス
電源及び信号処理部に接続されている。
[0003] Such a detecting element 2 is adhered and held by a conductive adhesive 3 on a substrate 1 on which a wiring pattern is formed. The conductive adhesive 3 also has a role of electrically connecting the lower electrode 21 of the detection element 2 and the lower electrode pattern 11 of the substrate 1. The upper electrode 22 of the detecting element 2 and the upper electrode pattern 12 of the substrate 1 are connected by the aluminum wire 4 wire-bonded by the ultrasonic bonding method. The lower electrode pattern 11 and the upper electrode pattern 12 are connected to a detection element bias power supply and a signal processing unit (not shown).

【0004】図5は、従来技術による検出器の他例にお
ける検出素子近傍の構造を示す断面図である。加圧収納
ケース6の台板61上に基板1aが載せられ、基板1aの上面
の外周部にはリング状の下部電極用パターン11a が形成
されている。検出素子2は下部電極用パターン11a 上に
配置された導電性パッキン51上に載せられ、検出素子2
の上部電極22上には導電性パッキン52が載せられ、この
導電性パッキン52には加圧収納ケース6の上部下面に形
成された上部電極用パターン62が接触している。この状
態で加圧収納ケース6の下部内面に形成されたねじに台
板61がねじ込まれると、検出素子2の下部電極21と基板
1aの下部電極用パターン11a 、及び検出素子2の上部電
極22と加圧収納ケース6の上部電極用パターン62とがそ
れぞれ導電性パッキン51及び52を介して加圧され、電気
的な導通状態となり、同時に検出素子2が両導電性パッ
キン51及び52によって保持される。
FIG. 5 is a sectional view showing a structure near a detecting element in another example of a conventional detector. The substrate 1a is placed on the base plate 61 of the pressure storage case 6, and a ring-shaped lower electrode pattern 11a is formed on the outer peripheral portion of the upper surface of the substrate 1a. The detection element 2 is placed on a conductive packing 51 disposed on the lower electrode pattern 11a,
A conductive packing 52 is placed on the upper electrode 22, and an upper electrode pattern 62 formed on the upper and lower surface of the pressure storage case 6 is in contact with the conductive packing 52. In this state, when the base plate 61 is screwed into the screw formed on the lower inner surface of the pressurized storage case 6, the lower electrode 21 of the detection element 2 and the substrate
The lower electrode pattern 11a of 1a, the upper electrode 22 of the detecting element 2 and the upper electrode pattern 62 of the pressurized storage case 6 are pressurized via the conductive packings 51 and 52, respectively, and become electrically conductive. At the same time, the detection element 2 is held by the two conductive packings 51 and 52.

【0005】図4の構造の場合には、検出素子2は導電
性接着剤3によって基板1に接着保持されているが、導
電性接着剤3は大量の金属フィラーを含有しているため
十分な接着強度をもたない(金属フィラーがない場合の
1/5〜1/10程度)ため、検出素子2と基板1との熱
膨張係数の差による熱応力や振動などの外力あるいは湿
度などによって接着層の一部に剥離を生じたり、電気的
な接触状態が不安定になったりすることがあり、振動に
よってノイズを発生することがある。現状では、導電性
と接着強度とが両立する導電性接着剤はない。
In the structure shown in FIG. 4, the detecting element 2 is adhered and held on the substrate 1 by the conductive adhesive 3, but the conductive adhesive 3 contains a large amount of metal filler and thus is not sufficient. Since it has no adhesive strength (approximately 1/5 to 1/10 of the case without metal filler), it is bonded by external force such as thermal stress or vibration due to the difference in thermal expansion coefficient between the detection element 2 and the substrate 1 or humidity. A part of the layer may be peeled off, or an electrical contact state may be unstable, and vibration may generate noise. At present, there is no conductive adhesive having both conductivity and adhesive strength.

【0006】図5の構造の場合には、検出素子2は上下
にある導電性パッキン51及び52によって支えられてお
り、衝撃などによって検出素子2が振動してノイズを発
生することが問題であり、構造が複雑で部品点数も多く
組立にも工数がかかる。
In the case of the structure shown in FIG. 5, the detecting element 2 is supported by upper and lower conductive packings 51 and 52, and there is a problem that the detecting element 2 vibrates due to an impact or the like to generate noise. The structure is complicated, the number of parts is large, and the assembling also takes time.

【0007】[0007]

【発明が解決しようとする課題】この発明の課題は、上
記の問題点を解決して、衝撃などの振動や温度変化や湿
度に強く、構造が簡単で部品点数が少なく組立工数も少
ない、検出素子の保持・配線構造を有する検出器を提供
することである。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to provide a structure which is resistant to vibrations such as impacts, temperature changes and humidity, has a simple structure, has a small number of parts, and has a small number of assembly steps. An object of the present invention is to provide a detector having an element holding / wiring structure.

【0008】[0008]

【課題を解決するための手段】この発明においては、放
射線を検出する検出素子と、検出素子を保持する基板
と、検出素子へ電源からの電圧を印加すると同時に検出
素子からの電気信号を取り出す電気配線と、検出素子用
バイアス電源と、信号処理部とからなる検出器におい
て、電気配線の内の検出素子に直接接続されている部分
がワイヤボンディングされたワイヤであり、検出素子が
絶縁性の接着剤によって基板に接着保持されている。
According to the present invention, there is provided a detecting element for detecting radiation, a substrate for holding the detecting element, and an electric device for applying a voltage from a power supply to the detecting element and extracting an electric signal from the detecting element at the same time. In the detector including the wiring, the bias power supply for the detection element, and the signal processing unit, a portion of the electric wiring directly connected to the detection element is a wire-bonded wire, and the detection element has an insulating adhesive. The adhesive is held on the substrate by the agent.

【0009】検出素子の電極にワイヤを直接ワイヤボン
ディングで接続することによって電気的な接続が安定
し、基板上に検出素子を接着保持するのに接着強度の大
きい絶縁性の接着剤を用いることによって検出素子を確
実かつ強固に基板に接着保持することができる。また、
ワイヤボンディングされた検出素子からのワイヤの一端
が基板上に形成された配線パターンにワイヤボンディン
グされている。基板上の配線パターンにワイアの一端を
ワイアボンディングすることによってワイアの長さを短
くすることができ、電気配線の形成がより確実かつ容易
となる。
The electrical connection is stabilized by directly connecting a wire to the electrode of the detection element by wire bonding, and an insulating adhesive having a high adhesive strength is used to adhere and hold the detection element on the substrate. The detection element can be securely and firmly adhered and held on the substrate. Also,
One end of a wire from the wire-bonded detection element is wire-bonded to a wiring pattern formed on the substrate. By wire bonding one end of the wire to the wiring pattern on the substrate, the length of the wire can be shortened, and the formation of the electrical wiring becomes more reliable and easier.

【0010】[0010]

【発明の実施の形態】この発明による検出器の実施の形
態を実施例により説明する。図1はこの発明による検出
器の実施例における検出素子近傍の構造を示す断面図で
あり、図2及び図3は実施例の製造方法を示す断面図で
ある。この発明による検出器は、検出素子2の両面に形
成されている下部電極21及び上部電極22と、それぞれの
電極を接続するために基板1b上に形成された下部電極用
パターン11b 及び上部電極用パターン12とをワイヤボン
ディング法によって接続していること、及び検出素子2
と基板1bとを絶縁性の接着剤3aで強固に接着しているこ
とを特徴とする。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the detector according to the present invention will be described with reference to examples. FIG. 1 is a sectional view showing a structure near a detecting element in an embodiment of a detector according to the present invention, and FIGS. 2 and 3 are sectional views showing a manufacturing method of the embodiment. The detector according to the present invention includes a lower electrode 21 and an upper electrode 22 formed on both surfaces of the detection element 2, and a lower electrode pattern 11b and an upper electrode pattern formed on a substrate 1b for connecting the respective electrodes. Connection with the pattern 12 by a wire bonding method;
And the substrate 1b are firmly bonded with an insulating adhesive 3a.

【0011】以下に、図1から図3を用いて、その構造
と製造方法とを説明する。図2は製造方法の第1の例を
示す。先ず、検出素子2を下部電極21を上にして治具7
にセットし、下部電極21上にアルミ線4aを超音波ボンデ
ィング法でワイヤボンディングし、アルミ線4aの他端を
必要な長さで切断する〔図2(a)〕。次に、基板1b上
の検出素子2の接着位置にエポキシ系接着剤のような絶
縁性の接着剤3aを塗布し、アルミ線4aをボンディングし
た検出素子2を下部電極21側を下に向けて接着剤3a上に
載せ、必要な荷重をかけて接着剤3aを加熱硬化させ、検
出素子2と基板1bとを接着する。接着後、アルミ線4aの
他端を下部電極用パターン11b に超音波ボンディング法
で接続し〔図2(b)〕、検出素子2の上部電極22と上
部電極用パターン12とをアルミ線4aの超音波ボンディン
グ法によって接続し〔図2(c)〕、検出素子2の基板
1b上への接着保持及び電気配線を完了する。
The structure and manufacturing method will be described below with reference to FIGS. FIG. 2 shows a first example of the manufacturing method. First, the jig 7 is set with the detection element 2 with the lower electrode 21 facing upward.
The aluminum wire 4a is wire-bonded on the lower electrode 21 by an ultrasonic bonding method, and the other end of the aluminum wire 4a is cut to a required length (FIG. 2A). Next, an insulating adhesive 3a such as an epoxy-based adhesive is applied to the bonding position of the detection element 2 on the substrate 1b, and the detection element 2 bonded with the aluminum wire 4a is turned with the lower electrode 21 side downward. The adhesive 3a is placed on the adhesive 3a, and the adhesive 3a is heated and cured by applying a necessary load, so that the detection element 2 and the substrate 1b are bonded. After the bonding, the other end of the aluminum wire 4a is connected to the lower electrode pattern 11b by ultrasonic bonding [FIG. 2 (b)], and the upper electrode 22 of the detecting element 2 and the upper electrode pattern 12 are connected to the aluminum wire 4a. Connected by the ultrasonic bonding method (FIG. 2C), and the substrate of the detecting element 2
Complete bonding and electrical wiring on 1b.

【0012】検出素子2と基板1bとの間の電気配線がワ
イヤボンディング法により実施されるので接続が確実と
なり、導電性接着剤による接続のように不安定になるこ
とはない。また、検出素子2と基板1bとは接着強度の大
きい絶縁性の接着剤3aで接着されるので、検出素子2の
保持は強固となり信頼性の高い保持状態が実現される。
Since the electric wiring between the detecting element 2 and the substrate 1b is carried out by the wire bonding method, the connection is ensured, and there is no instability unlike the connection by the conductive adhesive. Further, since the detection element 2 and the substrate 1b are bonded with the insulating adhesive 3a having a high bonding strength, the detection element 2 is firmly held, and a highly reliable holding state is realized.

【0013】図3の製造方法は、基板1b上に下部電極21
を上向きにして検出素子2を載せ、下部電極21と下部電
極用パターン11b とをアルミ線4aの超音波ボンディング
法によって接続し〔図3(a)〕、検出素子2を裏返し
て絶縁性の接着剤3aによって基板1bの所定位置に接着す
る〔図3(b)〕。その後、図は省略しているが、上部
電極22と上部電極用パターン12とを図1の場合と同様に
接続し、検出素子2の基板1b上への接着保持及び電気配
線を完了する。
The manufacturing method shown in FIG. 3 uses the lower electrode 21 on the substrate 1b.
The lower electrode 21 and the lower electrode pattern 11b are connected by the ultrasonic bonding method of the aluminum wire 4a [FIG. 3 (a)], and the lower electrode 21 and the lower electrode pattern 11b are turned upside down and the insulating adhesive is attached. It is bonded to a predetermined position on the substrate 1b by the agent 3a (FIG. 3B). Thereafter, although not shown, the upper electrode 22 and the upper electrode pattern 12 are connected in the same manner as in the case of FIG. 1, and the bonding and holding of the detection element 2 on the substrate 1b and the electric wiring are completed.

【0014】上記の実施例においては、検出素子2の電
気的接続方法としてアルミ線による超音波ボンディング
法の例を説明したが、他のワイヤボンディング法、例え
ば金線による熱圧着法なども同様に有効である。また、
アルミ線4aを基板上の電極用パターンにボンディングす
る例を説明したが、図示していないケースなどに直接ボ
ンディングすることも可能であり、この場合には基板上
に配線パターンを形成する必要はなくなる。
In the above embodiment, an example of the ultrasonic bonding method using an aluminum wire has been described as an electrical connection method of the detection element 2. However, other wire bonding methods, such as a thermocompression bonding method using a gold wire, are similarly used. It is valid. Also,
Although the example in which the aluminum wire 4a is bonded to the electrode pattern on the substrate has been described, it is also possible to directly bond the aluminum wire 4a to a case (not shown), and in this case, there is no need to form a wiring pattern on the substrate. .

【0015】[0015]

【発明の効果】この発明によれば、放射線を検出する検
出素子と、検出素子を保持する基板と、検出素子へ電源
からの電圧を印加すると同時に検出素子からの電気信号
を取り出す電気配線と、検出素子用バイアス電源と、信
号処理部とからなる検出器において、電気配線の内の検
出素子に直接接続されている部分がワイヤボンディング
されたワイヤであり、検出素子が絶縁性の接着剤によっ
て基板に接着保持されているので、検出素子への電気的
な接続が安定し、かつ検出素子を基板に確実かつ強固に
接着保持することができる。
According to the present invention, a detecting element for detecting radiation, a substrate holding the detecting element, an electric wiring for applying a voltage from a power supply to the detecting element and extracting an electric signal from the detecting element at the same time, In a detector including a bias power supply for a detection element and a signal processing unit, a portion of the electric wiring directly connected to the detection element is a wire-bonded wire, and the detection element is mounted on a substrate by an insulating adhesive. , The electrical connection to the detection element is stabilized, and the detection element can be securely and firmly adhered to the substrate.

【0016】また、ワイヤボンディングされた検出素子
からのワイヤの一端が基板上に形成された配線パターン
にワイヤボンディングされているので、ワイアの長さを
短くすることができ、電気配線の形成がより確実かつ容
易となる。したがって、衝撃などの振動や温度変化や湿
度に強く、構造が簡単で部品点数が少なく組立工数も少
ない、検出素子の保持・配線構造を有する検出器を提供
することができる。
Further, since one end of the wire from the wire-bonded detection element is wire-bonded to the wiring pattern formed on the substrate, the length of the wire can be shortened, and the formation of electric wiring can be further improved. Reliable and easy. Therefore, it is possible to provide a detector that is resistant to vibration such as impact, temperature change, and humidity, has a simple structure, has a small number of parts, and has a small number of assembly steps, and has a detection element holding / wiring structure.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明による検出器の実施例における検出素
子近傍の構造を示す断面図
FIG. 1 is a sectional view showing a structure near a detecting element in an embodiment of a detector according to the present invention.

【図2】実施例の製造方法の一例を示し、(a)は下部
電極へのワイアボンディング工程を示す断面図、(b)
は基板に接着し、下部電極を配線した状態の断面図、
(c)は上部電極も配線した状態の断面図
2A and 2B show an example of a manufacturing method according to the embodiment, in which FIG. 2A is a cross-sectional view showing a wire bonding step to a lower electrode, and FIG.
Is a cross-sectional view of a state where the lower electrode is wired to the substrate,
(C) is a cross-sectional view showing a state in which the upper electrode is also wired.

【図3】実施例の製造方法の他例を示し、(a)は下部
電極へのワイアボンディング工程を示す断面図、(b)
は基板に接着した状態の断面図
3A and 3B show another example of the manufacturing method according to the embodiment, in which FIG. 3A is a cross-sectional view showing a wire bonding step to a lower electrode, and FIG.
Is a cross-sectional view of the state where it is bonded to the substrate

【図4】従来技術による検出器の一例における検出素子
近傍の構造を示す断面図
FIG. 4 is a cross-sectional view showing a structure near a detecting element in an example of a conventional detector.

【図5】従来技術による検出器の他例における検出素子
近傍の構造を示す断面図
FIG. 5 is a cross-sectional view showing a structure near a detecting element in another example of the conventional detector.

【符号の説明】[Explanation of symbols]

1,1a, 1b 基板 11, 11a, 11b 下部電極用パターン 12 上部電極用パターン 2 検出素子 21 下部電極 22 上部電極 3 導電性接着剤 3a 接着剤 4, 4a アルミ線 5 導電性パッキン 6 加圧収納ケース 61 台板 62 上部電極用パターン 7 治具 1, 1a, 1b Substrate 11, 11a, 11b Lower electrode pattern 12 Upper electrode pattern 2 Detector 21 Lower electrode 22 Upper electrode 3 Conductive adhesive 3a Adhesive 4, 4a Aluminum wire 5 Conductive packing 6 Pressure storage Case 61 Base plate 62 Upper electrode pattern 7 Jig

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】放射線を検出する半導体放射線検出素子
と、半導体放射線検出素子を保持する基板と、半導体放
射線検出素子へ電源からの電圧を印加すると同時に半導
体放射線検出素子からの電気信号を取り出す電気配線
と、半導体放射線検出素子用のバイアス電源と、信号処
理部とからなる半導体放射線検出器において、電気配線
の内の半導体放射線検出素子に直接接続されている部分
がワイヤボンディングされたワイヤであり、半導体放射
線検出素子が絶縁性の接着剤によって基板に接着保持さ
れていることを特徴とする半導体放射線検出器。
1. A semiconductor radiation detecting element for detecting radiation, a substrate holding the semiconductor radiation detecting element, and an electric wiring for applying a voltage from a power supply to the semiconductor radiation detecting element and simultaneously extracting an electric signal from the semiconductor radiation detecting element. A semiconductor radiation detector comprising: a bias power supply for the semiconductor radiation detection element; and a signal processing unit, wherein a portion of the electrical wiring directly connected to the semiconductor radiation detection element is a wire-bonded wire, A semiconductor radiation detector, wherein the radiation detection element is adhered and held on a substrate by an insulating adhesive.
【請求項2】ワイヤボンディングされた半導体放射線検
出素子からのワイヤの一端が基板上に形成された配線パ
ターンにワイヤボンディングされていることを特徴とす
る請求項1に記載の半導体放射線検出器。
2. The semiconductor radiation detector according to claim 1, wherein one end of a wire from the wire-bonded semiconductor radiation detection element is wire-bonded to a wiring pattern formed on a substrate.
JP13203797A 1997-05-22 1997-05-22 Semiconductor radiation detector Expired - Lifetime JP3713895B2 (en)

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JP13203797A JP3713895B2 (en) 1997-05-22 1997-05-22 Semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13203797A JP3713895B2 (en) 1997-05-22 1997-05-22 Semiconductor radiation detector

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JPH10319127A true JPH10319127A (en) 1998-12-04
JP3713895B2 JP3713895B2 (en) 2005-11-09

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009041942A (en) * 2007-08-06 2009-02-26 Fuji Electric Systems Co Ltd Semiconductor radiation detector
JP2012021905A (en) * 2010-07-15 2012-02-02 Hitachi Consumer Electronics Co Ltd Radiation detector and radiation detector manufacturing method
JP2012145405A (en) * 2011-01-11 2012-08-02 Hitachi Aloka Medical Ltd Personal dosimeter

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5229917B2 (en) 2007-05-16 2013-07-03 独立行政法人産業技術総合研究所 Lactic acid oligomer and method for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009041942A (en) * 2007-08-06 2009-02-26 Fuji Electric Systems Co Ltd Semiconductor radiation detector
JP2012021905A (en) * 2010-07-15 2012-02-02 Hitachi Consumer Electronics Co Ltd Radiation detector and radiation detector manufacturing method
JP2012145405A (en) * 2011-01-11 2012-08-02 Hitachi Aloka Medical Ltd Personal dosimeter

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