JPS5913926A - Pyroelectric element - Google Patents
Pyroelectric elementInfo
- Publication number
- JPS5913926A JPS5913926A JP57124095A JP12409582A JPS5913926A JP S5913926 A JPS5913926 A JP S5913926A JP 57124095 A JP57124095 A JP 57124095A JP 12409582 A JP12409582 A JP 12409582A JP S5913926 A JPS5913926 A JP S5913926A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- bonding
- vapor
- insulating layer
- pyroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 12
- 230000001070 adhesive effect Effects 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は焦電材料の焦電効果を利用した焦電素子に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a pyroelectric element that utilizes the pyroelectric effect of a pyroelectric material.
従来例の構成とその問題点
2ベージ
焦電材料は入射赤外線エネルギーによる熱変化を電荷の
変化に変えて検出することのできる材料であり、LiT
aO3,SBN、TGS等の単結晶や、PbT103.
PZT等(D セラミック、PvF2等の有機材料がよ
く用いられている。これは熱的なセンサであるので、素
子形状1寸法、支持構造等の影響をうけやすい。このた
め、センサ構造として従来様々の工夫が行なわれている
。第1図はその一例である。図において、焦電材料11
の片面に受光電極12.他面に反射電極13が形成され
、支持台15に反射電極13側を導電性接着剤16で接
着させる。受光電極12の一部には接続電極14が設け
られ、細線17を介して他の部品(図示せず)と接続さ
れる。Conventional structure and its problems Two-base pyroelectric materials are materials that can detect thermal changes caused by incident infrared energy by converting them into changes in electric charge.
Single crystals such as aO3, SBN, TGS, PbT103.
Organic materials such as PZT (D ceramic, PvF2, etc.) are often used. Since this is a thermal sensor, it is susceptible to the effects of element shape dimensions, support structure, etc. For this reason, various conventional sensor structures have been used. Figure 1 is an example of this. In the figure, the pyroelectric material 11
A light-receiving electrode 12. A reflective electrode 13 is formed on the other surface, and the reflective electrode 13 side is adhered to the support base 15 with a conductive adhesive 16. A connection electrode 14 is provided on a part of the light-receiving electrode 12, and is connected to other components (not shown) via a thin wire 17.
センサをより高感度にするには、なるべく宙吊り状態に
して伝導による熱の損失を少なくすべきである。このた
めに素子の支持台15に熱伝導の低い材料を用いたり、
第1図のように支持台16を中空に抜いたりする。特に
中空にすると熱の逃げは少なくなり、リニア・アレイ・
センサの如く3ページ
熱拡散を非常に問題とする構成の場合は特にこの方法が
良い。To make the sensor more sensitive, it should be suspended in the air to reduce heat loss through conduction. For this purpose, a material with low thermal conductivity is used for the element support 15,
The support base 16 may be hollowed out as shown in FIG. In particular, if it is hollow, heat escape will be reduced, and linear array
This method is particularly suitable for a configuration such as a sensor in which thermal diffusion is a serious problem.
このようにして作った素子を他の素子と接続するために
は、従来第1図の如く素子の受光面の一部に接続電極1
4を設け、その電極14と他部品どの間を細線17でボ
ンディング等で行なっていた。この場合他の半導体チッ
プやパッケージと素子材料のボンディング条件が異なり
、各々ボンディング条件出しを行なわねばならず面倒で
ある。In order to connect the element made in this way to another element, conventionally a connection electrode is placed on a part of the light-receiving surface of the element as shown in FIG.
4, and the electrode 14 and other parts are connected by bonding or the like with a thin wire 17. In this case, the bonding conditions for the element material are different from those of other semiconductor chips or packages, and it is troublesome to determine the bonding conditions for each.
また焦電材料11の種類によっても条件は異なる。The conditions also differ depending on the type of pyroelectric material 11.
それに加えて、リニア・アレイの各素子の横方向の熱分
離を行なうために、ダイシング等で完全に切断分離を行
なうと、一つ一つの素子はかなり小さくなり、この上の
接続電極も小さくなる。その結果ボンディング条件はさ
らにきびしくなり、単に接続不良ばかりでなく素子の破
損を生じる。そのためボンディングの歩留りが悪くなり
、リニア・アレイの如く多素子を作る時のセンサとして
の歩留りが非常に悪くなる。In addition, if each element of the linear array is completely separated by dicing, etc. in order to thermally isolate it in the lateral direction, each element will become considerably smaller, and the connecting electrodes on it will also become smaller. . As a result, bonding conditions become more severe, resulting in not only poor connections but also damage to the elements. Therefore, the yield of bonding becomes poor, and the yield of a sensor when manufacturing multiple elements such as a linear array becomes extremely poor.
発明の目的
本発明は」二記欠点を除き、歩留りよく製造することの
出来る焦電素子を提供するものである。OBJECTS OF THE INVENTION The present invention provides a pyroelectric element that can be manufactured with high yield while eliminating the above-mentioned drawbacks.
発明の構成
本発明は表面側の電極も支持台上の絶縁物」二の電極に
接続するようにしたものである。Structure of the Invention In the present invention, the electrode on the front side is also connected to the second electrode of the insulator on the support base.
実施例の説明
本発明による焦電素子の断面構造を第2図に示す。素子
は焦電材料11の受光面に吸収電極12゜接続電極14
.裏面に反射電極13をもった構成で第1図のものと同
一である。この素子を電気的な絶縁層25をもった中空
支持台16に絶縁性接着剤27.導電性接着剤16を用
いて接着させる。DESCRIPTION OF EMBODIMENTS The cross-sectional structure of a pyroelectric element according to the present invention is shown in FIG. The element has an absorbing electrode 12 and a connecting electrode 14 on the light-receiving surface of a pyroelectric material 11.
.. The configuration is the same as that shown in FIG. 1 with a reflective electrode 13 on the back surface. This element is attached to a hollow support 16 with an electrically insulating layer 25 using an insulating adhesive 27. Adhesion is made using a conductive adhesive 16.
導電性接着剤16は中空支持台16の内側を通して支持
台15の下側へ接続しており、素子の裏面電極13は支
持台15の下側でリードレスで接続可能である。受光側
は接続電極14と支持台の絶縁層25上に形成した電極
29を導電性接着剤28で電気的に接続させる。リニア
・アレイにする場合は支持台15の一部を素子と共にダ
イシング等で切断していけばよいので、この導電性接着
剤28゜5ページ
電極29を分離するのは容易である。このようにして構
成した素子を電極29を通して他の部品とボンディング
で結線することができる。The conductive adhesive 16 is connected to the lower side of the support base 15 through the inside of the hollow support base 16, and the back electrode 13 of the element can be connected to the lower side of the support base 15 without a lead. On the light receiving side, the connection electrode 14 and the electrode 29 formed on the insulating layer 25 of the support are electrically connected using a conductive adhesive 28. In the case of forming a linear array, it is sufficient to cut a part of the support base 15 together with the elements by dicing or the like, so it is easy to separate the conductive adhesive 28.degree. 5 page electrodes 29. The element constructed in this manner can be connected to other components through the electrode 29 by bonding.
次に具体的実施例を示す。支持台15としてSi板を用
いその表面に酸化膜、窒化膜等の絶縁層25を作製し、
エツチングで中抜きをし、それをダイシングで切断して
支持台枠を作る。絶縁層25上にAlの電極29を蒸着
で作成する。この上に分極されたPbTiO3セラミッ
クにN1Cv蒸着受光電極12.Al蒸着反射電極13
.Al蒸着接続電極14をつけた素子を接着剤16.2
7でつける。その後受光面接続電極14とSi支持台絶
縁層26上にあるA[電極29とを導電性接着剤28で
接続する。これをリニア・アレイにするには焦電素子を
Si支持台15に切れ込みを入れるようにダイシングで
細条に切断すればよい。その様子を第3図に示す。36
は素子31を切断分離するダイシング・ラインであり、
支持枠15のSi も少し切りこんで横方向の熱分離
をすると共に電気的分離も行なう。ダイシング・ライン
35のピッ6ページ
チは100μは容易であり、切りしるも20μ位なら可
能である他の半導体チップやパソケージパソドへは支持
枠15上の電極29よりボンディングで接続できる。こ
うすることにより支持枠15が他の半導体チップと同じ
Siでもあるのでボンディング条件等はほぼそろい、ボ
ンディングの歩留りは良くなり、信頼性は向上する。こ
の接続法はボンディングに に限らず、フィルムキャリ
ヤー等の別の手段にも良い結果をもたらす。なお支持枠
15は絶縁さえとれれば金属、絶縁体いずれも使用可能
である。Next, specific examples will be shown. A Si plate is used as the support base 15, and an insulating layer 25 such as an oxide film or a nitride film is formed on the surface thereof.
Etch a hole and cut it with dicing to create a support frame. An Al electrode 29 is formed on the insulating layer 25 by vapor deposition. On top of this is a polarized PbTiO3 ceramic with N1Cv evaporated light receiving electrode 12. Al vapor deposited reflective electrode 13
.. The element with the Al vapor-deposited connection electrode 14 attached is glued with adhesive 16.2.
Put it on at 7. Thereafter, the light-receiving surface connection electrode 14 and the A[electrode 29 on the Si support insulating layer 26 are connected with a conductive adhesive 28. In order to form this into a linear array, the pyroelectric element may be cut into strips by dicing so as to make notches in the Si support 15. The situation is shown in Figure 3. 36
is a dicing line for cutting and separating the elements 31;
The Si of the support frame 15 is also slightly cut to provide lateral thermal isolation and electrical isolation. The 6-page pitch of the dicing line 35 is easily 100 μm, and it is possible to cut the dicing line 35 at a pitch of about 20 μm.It can be connected to other semiconductor chips or a path cage pad by bonding from the electrode 29 on the support frame 15. By doing this, since the support frame 15 is also made of Si, which is the same as other semiconductor chips, the bonding conditions etc. are almost the same, the yield of bonding is improved, and the reliability is improved. This connection method provides good results not only for bonding but also for other means such as film carriers. Note that the support frame 15 can be made of either metal or an insulator as long as it is insulated.
発明の効果
以上のように、本発明は表面に絶縁層を有する支持台上
に両面に電極を形成した焦電材料を取り付け、焦電材料
の受光電極を支持台の絶縁層上に形成した接続電極に結
合し、この接続電極からボンディングをとるようにした
焦電素子で、外部素子、外部回路とのボンディングが非
常に容易になり、歩留りを大幅に改善でき信頼性の高い
焦電素子を得ることができる。特にリニア・アレイ構造
7ページ
にしたときの歩留り向トは著しく、赤外リニア・アレイ
素子として特に好適である。Effects of the Invention As described above, the present invention provides a connection in which a pyroelectric material with electrodes formed on both sides is mounted on a support having an insulating layer on its surface, and a light-receiving electrode of the pyroelectric material is formed on the insulating layer of the support. A pyroelectric element that is bonded to an electrode and bonded from this connecting electrode, making bonding with external elements and external circuits extremely easy, greatly improving yield and obtaining a highly reliable pyroelectric element. be able to. In particular, when the linear array structure is made into 7 pages, the yield rate is remarkable, making it particularly suitable as an infrared linear array element.
第1図は従来の焦電素子の一例を示す断面図、第2図は
本発明による焦電素子の実施例における断面図、第3図
は本発明による焦電素子をIJ ニア・アレイ構造にし
た実施例の平面図である。
11・・・・・・焦電材料、12・・・・・・受光電極
、13・・・・・・反射電極、14・・・・・・接続電
極、15.24・・・・・・支持台、16 、28・・
・・・・導電性接着剤、25・・・・・・絶縁層、27
・・・・・・絶縁性接着剤、1了・・・・・・細線、2
9・・・・・・接続電極、31・・・・・・素子、35
・・・・・・ダイシングライン。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図Fig. 1 is a sectional view showing an example of a conventional pyroelectric element, Fig. 2 is a sectional view of an embodiment of a pyroelectric element according to the present invention, and Fig. 3 is a sectional view showing an example of a pyroelectric element according to the present invention in an IJ near array structure. FIG. 11... Pyroelectric material, 12... Light receiving electrode, 13... Reflecting electrode, 14... Connection electrode, 15.24... Support stand, 16, 28...
... Conductive adhesive, 25 ... Insulating layer, 27
...Insulating adhesive, 1. Thin wire, 2
9... Connection electrode, 31... Element, 35
・・・・・・Dicing line. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure
Claims (3)
電極を形成した焦電材料をとり付け、上記焦電材料の表
面側の第1の電極を前記支持台の絶縁層」二に形成した
第3の電極に接続し、焦電材料の裏面側の第2の電極を
前記支持台に接続したことを特徴とする焦電素子。(1) A pyroelectric material with electrodes formed on both sides is mounted on a hollow support having an insulating layer on its surface, and the first electrode on the surface side of the pyroelectric material is connected to the insulating layer of the support. A pyroelectric element, characterized in that the second electrode on the back side of the pyroelectric material is connected to the support base.
記載の焦電素子。(2) A pyroelectric element according to claim 1, in which a pyroelectric material is cut into strips.
化物又は窒化物である特許請求の範囲第1項記載の焦電
素子。(3) The pyroelectric element according to claim 1, wherein the support base is made of silicon and the insulating layer is made of silicon oxide or nitride.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57124095A JPS5913926A (en) | 1982-07-15 | 1982-07-15 | Pyroelectric element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57124095A JPS5913926A (en) | 1982-07-15 | 1982-07-15 | Pyroelectric element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5913926A true JPS5913926A (en) | 1984-01-24 |
JPH0129413B2 JPH0129413B2 (en) | 1989-06-09 |
Family
ID=14876795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57124095A Granted JPS5913926A (en) | 1982-07-15 | 1982-07-15 | Pyroelectric element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5913926A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS612025A (en) * | 1984-06-14 | 1986-01-08 | Murata Mfg Co Ltd | Linear pyroelectric sensor array |
JPS61108935A (en) * | 1984-11-01 | 1986-05-27 | Toshiba Component Kk | Pyroelectric type infrared sensor element |
EP0558766A1 (en) * | 1991-09-24 | 1993-09-08 | Nohmi Bosai Kogyo Kabushiki Kaisha | Pyroelectric element |
JPH06186083A (en) * | 1993-03-24 | 1994-07-08 | Murata Mfg Co Ltd | One-dimensional pyroelectric sensor array |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5728223A (en) * | 1980-07-26 | 1982-02-15 | New Japan Radio Co Ltd | Pyroelectric type radiation wave detector and manufacture thereof |
-
1982
- 1982-07-15 JP JP57124095A patent/JPS5913926A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5728223A (en) * | 1980-07-26 | 1982-02-15 | New Japan Radio Co Ltd | Pyroelectric type radiation wave detector and manufacture thereof |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS612025A (en) * | 1984-06-14 | 1986-01-08 | Murata Mfg Co Ltd | Linear pyroelectric sensor array |
JPS61108935A (en) * | 1984-11-01 | 1986-05-27 | Toshiba Component Kk | Pyroelectric type infrared sensor element |
EP0558766A1 (en) * | 1991-09-24 | 1993-09-08 | Nohmi Bosai Kogyo Kabushiki Kaisha | Pyroelectric element |
JPH06186083A (en) * | 1993-03-24 | 1994-07-08 | Murata Mfg Co Ltd | One-dimensional pyroelectric sensor array |
Also Published As
Publication number | Publication date |
---|---|
JPH0129413B2 (en) | 1989-06-09 |
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