JPH0878476A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE: To prolong the service life of a bump at an electrode connecting part of a semiconductor element. CONSTITUTION: The semiconductor integrated circuit device comprises a board 3 made of a ceramic material, e.g. mullite, and mounting a semiconductor element 2 through a solder bump 1, for example, butter members 4 disposed at an electrode connecting part 2a on the semiconductor element 2 side and at an electrode connecting part 3a on the board 3 side and connected with the bumps 1, and a cap member 7 composed of a ceramic having high thermal conductivity, e.g. aluminum nitride, and connected through a sealing solder 5 and a metallize layer 6 with the major surface of the board 3. The semiconductor element 2 is face down bonded to the board 3 and the butter member 4 is formed into dish shape having an inclining part 4a on the outer periphery. The butter member 4 is connected, at the bottom part and the inner circumferential face thereof, with the bump 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device for face down bonding a semiconductor element to a substrate via solder bumps.

[0002]

2. Description of the Related Art The techniques described below are for studying the present invention,
The present invention was studied by the present inventors upon completion, and its outline is as follows.

In a semiconductor integrated circuit device in which a semiconductor element is face-down bonded to a substrate for mounting the semiconductor element, bumps made of solder or the like are generally used for electrode connecting portions of the semiconductor element.

The connection method by the face-down bonding is based on CCB (Controlled Collapse Bondin).
g) Known as bump connection.

A bump for connecting a semiconductor element to a substrate is disclosed in, for example, Japanese Patent Laid-Open No. 59-35439.

[0006]

However, in the CCB bump connection by the above-mentioned technique, stress is applied to the electrode end of the CCB bump due to solder or the like at the time of life evaluation such as temperature cycle or power cycle, and the CCB bump is damaged. To do. As a result, there arises a problem that the life of the CCB bump is shortened.

Further, the CCB bumps are also stressed by mechanical vibrations generated when the semiconductor integrated circuit device is used, which may damage the CCB bumps.

Since the CCB bumps also vary in size, there is a difference in the shape of individual bumps, and as a result, the life of the CCB bumps also varies.

Therefore, an object of the present invention is to provide a semiconductor integrated circuit device for extending the life of the bumps in the electrode connecting portion of the semiconductor element.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0011]

Of the inventions disclosed in the present application, a representative one will be briefly described below.
It is as follows.

That is, a cushioning member for connecting to the bump is provided on the electrode connecting portion on the semiconductor element side, the electrode connecting portion on the substrate side for connecting the semiconductor element via the bump, or both.

Further, the cushioning member is dish-shaped having an inclined portion on the outer periphery, and the bottom portion and the inner peripheral surface of the cushioning member are connected to the bumps.

Further, the buffer member is formed of conductive rubber or a thin metal plate.

Further, the buffer member is installed at a position corresponding to a corner portion of the bump connecting surface of the semiconductor element or an outer peripheral portion of the bump connecting surface including the corner portion of the bump connecting surface.

[0016]

According to the above-mentioned means, the buffer member for connecting to the bump is provided on the electrode connecting portion on the semiconductor element side, the electrode connecting portion on the substrate side for connecting the semiconductor element via the bump, or both. As a result, even if stress is applied to the ends of the bumps, the buffer member deforms following the deformation of the bumps.

As a result, the stress applied to the bumps is reduced and the life of the bumps can be extended.

Further, the cushioning member is in the shape of a dish having an inclined portion on the outer periphery, the bottom portion and the inner peripheral surface of the cushioning member are connected to the bumps, and the cushioning member is made of a conductive rubber or a thin film. Since it is formed of the formed metal plate, the connectivity between the buffer member and the bump can be improved.

As a result, the followability of the cushioning member when the bump is deformed under the influence of heat can be improved.

The cushioning member is installed at a position corresponding to a corner portion of the bump connecting surface of the semiconductor element or an outer peripheral portion of the bump connecting surface including the corner portion of the bump connecting surface,
The cushioning member can be installed on the bumps only at places where stress is easily applied.

As a result, the number of the buffer members to be installed can be reduced and the manufacturing cost of the semiconductor integrated circuit device can be reduced.

[0022]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is a sectional view showing an embodiment of the structure of a semiconductor integrated circuit device according to the present invention, and FIG. 2 shows a buffer member used for an electrode connecting portion of a semiconductor element mounted on the semiconductor integrated circuit device according to the present invention. FIG. 3 is an enlarged partial sectional view showing an example of the structure, and FIG. 3 is a plan view showing an example of the structure of the bump connection surface of the semiconductor element mounted on the semiconductor integrated circuit device according to the present invention.

First, the structure of the semiconductor integrated circuit device of this embodiment will be described with reference to FIGS. 1 and 2. The semiconductor element 2 is mounted via the bump 1 made of solder or the like and is made of a ceramic material such as mullite. The substrate 3, the electrode connecting portion 2a on the semiconductor element 2 side, and the buffer member 4 installed on the electrode connecting portion 3a on the substrate 3 side and connected to the bump 1
And a cap member 7 made of high thermal conductivity ceramic such as aluminum nitride (AlN) and connected to the main surface of the substrate 3 via the sealing solder 5 and the metallized layer 6.

That is, in the semiconductor integrated circuit device, the semiconductor element 2 is face down bonded to the substrate 3 using the bumps 1, that is, CCB bump connection is performed.

Here, the cushioning member 4 of this embodiment has a thin film structure and forms a dish having an inclined portion 4a on the outer periphery thereof, and the bottom portion 4b and the inner peripheral surface 4c of the cushioning member 4 are formed.
And the bump 1 are connected.

The buffer member 4 may be installed only on one of the electrode connecting portion 2a on the semiconductor element 2 side and the electrode connecting portion 3a on the substrate 3 side.

The cushioning member 4 is a conductive member,
For example, it is formed of a conductive rubber or a thin metal plate made of copper.

Further, on the surfaces of the semiconductor element 2 and the substrate 3, there are provided an on-element underlying electrode 2b and an on-substrate underlying electrode 3b, which are underlying electrodes made of an alloy of Cr, Cu, Au, etc., respectively. The cushioning member 4 is installed.

Here, when the buffer member 4 is a conductive rubber,
The conductive rubber is installed using a screen printing method or the like, and in the case of a thin metal plate made of copper or the like, the metal plate is installed by a press or the like.

Although the cushioning member 4 may be installed on all the electrode connecting portions 2a on the semiconductor element 2, as shown in FIG. 2c or the bump connection surface peripheral portion 2d including the bump connection surface corner portion 2c may be installed only at a position corresponding to the bump connection surface outer peripheral portion 2d.

Next, the operation and effect of the semiconductor integrated circuit device according to this embodiment will be described.

First, the electrode connecting portion 2a on the semiconductor element 2 side,
Alternatively, the buffer member 4 for connecting to the bump 1 is installed on the electrode connecting portion 3a on the side of the substrate 3 for connecting the semiconductor element 2 via the bump 1 which is a CCB bump, or both of them, so that the temperature cycle and the power cycle can be improved. When evaluating, etc., stress due to heat is applied to the end of the bump 1,
Even when the bumps 1a are deformed, the buffer member 4 follows the deformation of the bumps 1 and deforms as the deformation buffer member 4d.

As a result, the stress applied to the end portion of the bump 1 can be reduced, the life of the bump 1 can be extended, and the reliability of data at the time of evaluation can be improved.

Further, when the semiconductor integrated circuit device is used, even if stress is applied to the bump 1 due to mechanical vibration, the stress is reduced, so that the life of the bump 1 can be extended.

Further, the cushioning member 4 is formed in a dish shape having an inclined portion 4a on the outer periphery, the bottom 4b and the inner peripheral surface 4c of the cushioning member 4 are connected to the bumps 1, and the cushioning member 4 is electrically conductive. The connection between the cushioning member 4 and the bump 1 can be improved by forming the elastic member or the thin metal plate.

That is, when the bump 1 is deformed by the stress applied to the bump 1, the inclined portion 4a of the buffer member 4 can follow the bump 1.

As a result, the followability of the cushioning member 4 when the bump 1 is deformed can be improved, and as a result, the life of the bump 1 can be extended similarly to the above.

Further, as the bump 1 located farther from the vicinity of the center of the semiconductor element 2 has a larger difference in contraction rate with respect to heat between the semiconductor element 2 and the substrate 3, the stress applied to the bump 1 is also larger.

Therefore, the buffer member 4 is used as the semiconductor element 2.
Connected only to the bump 1 at a position distant from the vicinity of the center, that is, at a position corresponding to the bump connection surface corner portion 2c of the semiconductor element 2 or the bump connection surface outer peripheral portion 2d including the bump connection surface corner portion 2c. Thus, the cushioning member 4 can be installed on the bumps 1 only at locations where heat stress is likely to be applied.

As a result, the number of buffer members 4 to be installed can be reduced, and the manufacturing cost of the semiconductor integrated circuit device can be reduced.

The invention made by the inventor of the present invention has been specifically described above based on the embodiments, but the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, in the semiconductor integrated circuit device described in the above embodiment, the cushioning member installed in the electrode connecting portion on the semiconductor element side (or the electrode connecting portion on the substrate side) has a dish shape having an inclined portion on the outer periphery. Was formed, but FIG.
As shown in the enlarged partial sectional view of the cushioning member used for the electrode connecting portion of the semiconductor element mounted on the semiconductor integrated circuit device according to another embodiment of the present invention, the cushioning member 8 has a disk-like thin film structure. It may be formed.

In other words, since the disk-shaped cushioning member 8 having the thin film structure is installed, stress is applied to the ends of the bump 1 due to heat or the like, and even if the deformed bump 1a is formed, the cushioning member 8 will not be affected by the bump 1. Following the deformation, the deformation buffer member 8a is deformed.

As a result, similarly to the above-mentioned embodiment, the stress applied to the end portion of the bump 1 can be reduced, the life of the bump 1 can be extended, and the reliability of data at the time of evaluation can be improved. be able to.

Here, the cushioning member 8 may be a conductive rubber or a thin metal plate made of copper or the like, as in the above embodiment.

Further, the buffer member 8 may be installed on the electrode connecting portion 2a on the semiconductor element 2 side, on the electrode connecting portion 3a on the substrate 3 side, or on both of them.

The buffer member 4 shown in FIG. 1 may be installed in the electrode connecting portion 2a on the semiconductor element 2 side, and the buffer member 8 shown in FIG. 4 may be installed in the electrode connecting portion 3a on the substrate 3 side. , Or vice versa.

[0049]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). By providing a buffer member for connecting to the bump on the electrode connecting portion on the semiconductor element side, or on the substrate side connecting the semiconductor element through the bump, or both, temperature cycle, power cycle, etc. At the time of evaluation, the buffer member is deformed following the deformation of the bumps even if stress is applied to the ends of the bumps due to heat or the like.

As a result, the stress applied to the bumps is reduced, the life of the bumps can be extended, and
The reliability of data at the time of evaluation can be improved.

(2). When the semiconductor integrated circuit device is used, even if stress is applied to the bump due to mechanical vibration, the stress is reduced, so that the life of the bump can be extended.

(3). The cushioning member forms a dish having an inclined portion on the outer periphery, and a bottom portion and an inner peripheral surface of the cushioning member,
Since the bumps are connected to each other and the cushioning member is formed of conductive rubber or a thin metal plate, the connectivity between the cushioning member and the bumps can be improved.

Therefore, when a stress is applied to the bump and the bump is deformed, the inclined portion of the cushioning member can follow the bump. This can improve the followability of the cushioning member when the bump is deformed, and as a result,
Similar to the above, the life of the bump can be extended.

(4). By forming the buffer member into a thin disk shape, the same effect as the above (1) can be obtained.

(5). By providing the buffer member only at a position away from the vicinity of the center of the semiconductor element, that is, at a position corresponding to a bump connection surface corner portion of the semiconductor element or a bump connection surface outer peripheral portion including the bump connection surface corner portion. It is possible to install the cushioning member on the bumps only at locations where heat stress is likely to be applied.

As a result, the number of the buffer members to be installed can be reduced, and the manufacturing cost of the semiconductor integrated circuit device can be reduced.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the structure of a semiconductor integrated circuit device according to the present invention.

FIG. 2 is an enlarged partial cross-sectional view showing an embodiment of the structure of a buffer member used for an electrode connecting portion of a semiconductor element mounted on a semiconductor integrated circuit device according to the present invention.

FIG. 3 is a plan view showing an example of a structure of a bump connection surface of a semiconductor element mounted on a semiconductor integrated circuit device according to the present invention.

FIG. 4 is an enlarged partial cross-sectional view showing an example of a structure of a buffer member used for an electrode connecting portion of a semiconductor element mounted in a semiconductor integrated circuit device which is another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 bump 1a deformed bump 2 semiconductor element 2a electrode connecting portion 2b element upper base electrode 2c bump connecting surface corner portion 2d bump connecting surface outer peripheral portion 3 substrate 3a electrode connecting portion 3b substrate lower electrode 4 buffer member 4a inclined portion 4b bottom portion 4c Circumferential surface 4d Deformation buffer member 5 Sealing solder 6 Metallization layer 7 Cap member 8 Buffer member 8a Deformation buffer member

Claims (6)

[Claims] 1. A semiconductor integrated circuit device for connecting a semiconductor element to a substrate via a bump, wherein the bump is connected to an electrode connection portion on the semiconductor element side, an electrode connection portion on the substrate side, or both. A semiconductor integrated circuit device, in which a buffer member is installed. 2. The semiconductor integrated circuit device according to claim 1, wherein the buffer member has a dish shape having an inclined portion on an outer periphery, and a bottom portion and an inner peripheral surface of the buffer member are connected to the bump. And a semiconductor integrated circuit device. 3. The semiconductor integrated circuit device according to claim 1, wherein the buffer member has a disk shape. 4. The semiconductor integrated circuit device according to claim 1, wherein the buffer member is made of conductive rubber. 5. The semiconductor integrated circuit device according to claim 1, wherein the buffer member is formed of a thin metal plate. 6. The semiconductor integrated circuit device according to claim 1, 2, 3, 4, or 5, wherein the buffer member has a bump connection surface corner portion of the semiconductor element or a bump including the bump connection surface corner portion. A semiconductor integrated circuit device, wherein the semiconductor integrated circuit device is installed at a position corresponding to an outer peripheral portion of a connection surface.