JPH10300780A - Contact probe and production thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the breadthwise dimension at the forward end part of a contact pin more than that of an electrode pad even if the breadthwise dimension of the electrode pad itself is reduced due to short pitch by setting the breadthwise dimension at the forward end part of a contact pin smaller than that at the base end part thereof. SOLUTION: A contact probe has such a structure as a metal pattern wiring 3 is pasted to one surface of a polyimide resin film and the forward end of the metal pattern wiring 3 is projected from the end part of the resin film as a contact pin 3a. The contact pin 3a has a breadthwise dimension wa at the forward end part thereof being set smaller than that wb at the base end part thereof. Since the breadthwise dimension wa is set smaller than the breadthwise dimension wb, the breadthwise dimension wa at the forward end part of the contact pin 3a can be reduced more than that of the electrode pad even if the breadthwise dimension of the electrode pad itself is reduced due to short pitch. In this regard, a required breadthwise dimension wb can be ensured at the base end part of the contact pin 3a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact probe which is used as a probe pin, a socket pin or the like, and performs an electrical test by contacting each terminal of a semiconductor IC chip or a liquid crystal device.

[0002]

2. Description of the Related Art Generally, a probe card is used to perform an electrical test by contacting a semiconductor chip such as an IC chip or an LSI chip or each terminal of an LCD (liquid crystal display). In recent years, as the integration and miniaturization of IC chips and the like have increased, the pitch of contact pads, which are electrodes, has been reduced, and the pitch of contact pins has been required to be narrower. However, with a tungsten needle contact probe used as a contact pin, it has been difficult to cope with a multi-pin narrow pitch due to the limitation of the diameter of the tungsten needle.

On the other hand, for example, Japanese Patent Application Laid-Open No. 6-331
No. 655, a probe card in which a plurality of pattern wirings are formed on a resin film, and each tip of the pattern wirings is arranged so as to protrude from the resin film and is used as a contact pin by various mechanical parts. Technology has been proposed. In this technical example, a multi-pin narrow pitch is achieved by using a contact pin at the tip of a pattern wiring precisely formed by using a photoengraving technique.

[0004]

By the way, recently, the pitch of the electrode pad has been narrowed, and accordingly, the width of the electrode pad itself has been reduced. Correspondingly, as shown in FIG. 17 and FIG.
Means that the pitch becomes narrower and the contact pin C
The width W of p itself is also small. For example, when the pitch of the electrode pad P is not so narrow, FIG.
As shown in (b), the width Pw of the pad surface was sufficiently ensured with respect to the width W of the contact pin Cp. However, as the pitch became narrower, as shown in FIG. The width Pw of the surface and the width w of the contact pin Cp itself are substantially the same (these dimensions are, for example, about 25 to 30 μm). Therefore, even if the position of the contact pin Cp is slightly shifted with respect to the electrode pad P,
As shown in FIG. 3C, the contact pin Cp comes into contact with the protective film M covering both ends of the upper surface of the electrode pad P, and there is a problem that conduction cannot be achieved.

As a solution to the above problem, it is conceivable that the width w of the contact pin Cp itself is further reduced. However, as shown in FIG. 20, in the patterning process in the photoengraving technique, the pin width w is reduced and the ratio of the sum of the pin width w and the adjacent resist width wa to the pin thickness t ( When t / (w + wa), which is called the aspect ratio, is increased, the resolution of the photoresist R is extremely lowered, and it becomes difficult to pattern the opening Ra formed in the photoresist layer R after exposure and development. .

That is, as shown in FIG. 1A, a portion of the remaining photoresist layer R in the vicinity of the interface with the base metal layer B may be eroded.
When the metal layer K is formed on a, the edge D of the contact portion of the contact pin Cp may not be sharp as shown in FIGS. Similarly, due to a decrease in the resolution of the photoresist, the openings are not formed well, and the contact pins are not formed in a shape according to the patterning and are partially missing.

[0007] As another problem, if the width w of the contact pin itself is reduced, the strength becomes insufficient, and the contact pin Cp is broken due to repeated use. In this case, the position with respect to the electrode pad P shifts, and a problem of poor contact occurs.

The present invention has been made in view of the above circumstances, and can cope with a reduction in electrode pad width due to a narrow pitch, and can minimize problems in patterning and strength. It is an object of the present invention to provide a contact probe and a method for manufacturing the same.

[0009]

The present invention has the following features to attain the object mentioned above. That is, in the contact probe according to claim 1, in a contact probe in which a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film and serve as contact pins, A technique in which the distal end is formed to have a smaller width than the base end is employed.

In this contact probe, the width of the contact pin at the distal end is smaller than the width at the base of the contact pin. Therefore, even if the width of the electrode pad itself is reduced as the pitch becomes narrower. In addition, it is possible to reduce the width dimension of the tip of the contact pin more than the width dimension of the electrode pad. Thereby, even if the position of the contact pin is slightly shifted with respect to the electrode pad, electrical continuity can be established with the electrode pad. In this case, the width of the proximal end of the contact pin can be secured only to the required dimension,
Problems in patterning and strength can be minimized.

[0011] In the contact probe according to the second aspect,
In a contact probe in which a plurality of pattern wirings are formed on a film and the tips of these pattern wirings are arranged so as to protrude from the film and serve as contact pins, the tip of the contact pin is wider than its base end. A technology in which the size and thickness are formed small is adopted.

In this contact probe, the distal end of the contact pin is formed to have not only the width dimension but also the thickness dimension smaller than the base end, and the tip is gradually thinned three-dimensionally toward the distal end. In addition, the area of the portion in contact with the electrode pad can be reduced, and the contact pressure on the electrode pad can be increased as compared with a conventional general contact pin. Therefore, overdriving of the contact pins with respect to the electrode pads during scrubbing (work to ensure the conductivity of the electrode pads by scraping the oxide film on the electrode pad surfaces with the contact pins) (after the contact pins contact the electrode pads) Further, the amount of downward movement can be reduced as compared with the conventional general one. Thereby, abrasion and damage of the contact pin tip are reduced, and the life can be extended.

According to a third aspect of the present invention, a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. What is claimed is: 1. A method for manufacturing a contact probe, wherein a width dimension of a distal end portion is formed smaller than a proximal end portion thereof, wherein a first metal layer made of a material adhered to or bonded to a material of the contact pin on a substrate layer Forming a first metal layer, forming a mask on the first metal layer, and plating the second metal layer to be provided for the contact pins on an unmasked portion by patterning the pattern. A plating step of forming a wiring, and covering a portion other than a portion provided for the contact pin on the pattern wiring made of the second metal layer from which the mask has been removed. A film attaching step of attaching the film, and a separating step of separating a portion consisting of the film and the pattern wiring, and a portion consisting of the substrate layer and the first metal layer, The shape of the contact pin forming portion of the mask used in the plating process employs a technique in which the width dimension of the tip portion forming portion of the contact pin is formed smaller than the width dimension of the base portion forming portion. Is done.

In this method of manufacturing a contact probe,
The shape of the contact pin formation portion of the mask used in the plating process is such that the width dimension of the tip portion formation portion of the contact pin is formed smaller than the width dimension of the base end portion formation portion, The contact pin formed in the same step is formed such that the width dimension at the distal end is smaller than the width at the proximal end. According to this manufacturing method, since it is only necessary to change the shape of the conventional mask, it can be manufactured relatively easily.

In the method of manufacturing a contact probe according to the present invention, a plurality of pattern wirings are formed on the film, and the tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A method for manufacturing a contact probe, wherein a width dimension and a thickness dimension of a distal end portion are formed smaller than a proximal end portion thereof, wherein a material of a material to be adhered to or bonded to the material of the contact pin on a substrate layer is provided. A first metal layer forming step of forming one metal layer, and a plating process of applying a mask on the first metal layer and plating a second metal layer to be provided to the contact pins on an unmasked portion A plating process for forming the pattern wiring, and a portion provided for the contact pin on the pattern wiring made of the second metal layer from which the mask has been removed. A film applying step of applying the film covering other than the above, a part consisting of the film and the pattern wiring, and a separating step of separating a part consisting of the substrate layer and the first metal layer, An etching step of etching the front end of the contact pin to form a width dimension and a thickness dimension smaller than the base end of the contact pin.

According to this method of manufacturing a contact probe, the contact pin is provided with an etching step of etching the tip end portion so as to form a width dimension and a thickness dimension smaller than the base end portion. As a result, the tip of the contact pin is gradually thinned three-dimensionally toward the tip. According to the method based on the change of the mask shape described above, there is a possibility that the patterning is limited as the pitch becomes narrower and the tip portion (narrow portion) of the contact pin is crushed. Such a problem does not occur. Further, as an incidental effect of the above-described etching step, a burr-like projection which is likely to occur at the edge of the contact pin shown in FIG. 14C can be preferentially removed.

In the contact probe according to the fifth aspect,
A technique in which a metal film is directly adhered to the film of the contact probe is employed.

In this contact probe, even if the film is, for example, a resin film or the like that easily expands by absorbing moisture, the metal film is directly attached to the film. Thereby, the elongation of the film is suppressed. Furthermore, the metal film can be used as a ground, thereby enabling impedance matching to be performed near the tip of the contact probe and preventing adverse effects due to reflected noise even when performing a test in a high frequency range. it can.

That is, if the characteristic impedance between the substrate wiring side and the contact pin does not match in the middle of a transmission line from a tester called a prober, reflected noise occurs. In this case, the longer the transmission lines having different characteristic impedances are, the longer the transmission noise becomes. There is a problem that reflection noise is large.
Reflected noise causes signal distortion, and tends to cause malfunction at higher frequencies. In the present contact probe, by using the metal film as the ground, it is possible to match the characteristic impedance with the wiring side of the substrate up to the vicinity of the contact pin tip, thereby suppressing malfunction due to reflected noise.

In the contact probe according to the sixth aspect,
For the metal film to be attached to the film, a technique is employed in which the metal film is provided up to the vicinity of the contact pin in a direction along the film surface.

In this contact probe, the metal film functions as a ground up to the vicinity of the contact pin. Therefore, it is possible to minimize the characteristic impedance deviation from the substrate wiring side up to the vicinity of the contact pin, and to reduce the reflection noise. Malfunction can be suppressed.

In the contact probe according to the seventh aspect,
A technique in which a second film is directly adhered to the metal film is employed.

In this contact probe, since the second film is directly adhered to the metal film, it is possible to obtain a function and an effect that the contact probe serves as a cushioning material against tightening when the contact probe is incorporated as a probe card. Can be. Therefore, it is possible to reduce the damage to the wiring pattern at the time of assembling.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of a contact probe according to the present invention will be described below with reference to FIGS. In these figures, reference numeral 1 denotes a contact probe, 2 denotes a resin film (film), and 3 denotes a pattern wiring.

As shown in FIG. 2, the contact probe 1 of this embodiment has a structure in which a pattern wiring 3 made of metal is attached to one surface of a polyimide resin film 2. The tip of the pattern wiring 3 projects from the contact pin 3a. Reference numeral 4 denotes an alignment hole described later.

As shown in FIG. 1, the contact pin 3a has a width wa at a distal end portion smaller than a width wb at a base end portion.

Next, with reference to FIGS. 3 to 5, the steps of manufacturing the contact probe 1 will be described in the order of steps.

[Base Metal Layer Forming Step] First, as shown in FIG. 3A, a base metal layer 6 is formed on a supporting metal plate 5 made of stainless steel by Cu (copper) plating. This base metal layer 6 is formed on the upper surface of the supporting metal plate 5 with a uniform thickness. [Pattern forming step] After forming a photoresist layer (mask) 7 on the base metal layer 6, FIG.
As shown in FIG.
Then, a photomask 8 having a predetermined pattern is applied to the substrate and exposed, and as shown in FIG. 3C, the photoresist layer 7 is developed to remove the portion to be the pattern wiring 3, and the remaining photoresist layer 7 is removed. Opening (unmasked part)
7a is formed. In this case, the shape of the contact pin 3a forming portion of the photomask 8 is
The width dimension of the distal end forming portion is smaller than the width dimension of the proximal end forming portion.

In the present embodiment, the photoresist layer 7 is formed of a negative photoresist, but a desired opening 7a is formed by employing a positive photoresist.
May be formed. The "mask" used here
Is not limited to the one in which the opening 7a is formed through the exposure and development steps using the photomask 8 like the photoresist layer 7 of the present embodiment. For example, a hole is formed in advance in a portion to be plated (that is, the hole is formed in advance in a state indicated by reference numeral 7 in FIG. 3C).
It may be a film or the like. When such a film or the like is used as a “mask”, the pattern forming step in the present embodiment is unnecessary.

[Electroplating Step] Then, FIG.
As shown in FIG. 3, after the Ni or Ni alloy layer N serving as the pattern wiring 3 is formed in the opening 7a by plating, the photoresist layer 7 is formed as shown in FIG.
Is removed.

[Film Adhering Step] Next, FIG.
As shown in FIG. 2, on the Ni or Ni alloy layer N, the resin film 2 is bonded to the tip of the pattern wiring 3 shown in FIG. Glue. The resin film 2 is made of a polyimide resin PI and a metal film (copper foil) 5.
Reference numeral 00 denotes a two-layer tape provided integrally. Prior to this film deposition step, the copper surface 500
Then, after partial copper etching, gold plating is applied depending on the application to form a ground plane. Then, in this film attaching step, the resin surface PI of the two-layer tape is attached to the Ni or Ni alloy layer N via the adhesive 2a. In addition, the metal film 500, in addition to the copper foil,
Ni or a Ni alloy may be used. [Separation Step] Then, as shown in FIG. 3 (g), after the portion consisting of the resin film 2, the pattern wiring 3, and the base metal layer 6 is separated from the supporting metal plate 5, the Cu metal is etched through Cu. Only the pattern wiring 3 is bonded to the resin film 2.

[Gold coating step] Then, as shown in FIG.
Plating is performed to form an Au plating layer A on the surface. At this time, the Au layer A is formed on the entire surface of the contact pins 3a protruding from the resin film 2 over the entire circumference.

Through the above steps, the contact probe 1 is manufactured.

In this contact probe 1, since the width dimension wa at the distal end of the contact pin 3a is formed smaller than the width dimension wb at the base end thereof, the width of the electrode pad itself is reduced with the narrow pitch. Even if the width is reduced, the width wa of the tip of the contact pin 3a can be reduced to be equal to or larger than the width of the electrode pad. Thus, even if the position of the contact pin 3a is slightly displaced with respect to the electrode pad, the contact pin 3a does not touch the protective films covering both ends of the upper surface of the electrode pad, and electrical conduction can be secured. In this case, the width dimension w of the base end of the contact pin 3a
Since b can be secured only in a required dimension, it is possible to minimize the problem of the resolution of the photoresist at the time of patterning and the problem of the strength of the contact pin 3a.

As shown in FIGS. 4 and 5, in the contact probe 1, the metal film 500 is provided up to the vicinity of the contact pin 3a.
Means that the amount of protrusion L from the tip of the metal film 500 is 5 m
m or less. The metal film 500 can be used as a ground, which enables impedance matching to be performed near the tip of the probe device 70, and prevents adverse effects due to reflected noise even when performing a test in a high frequency range. it can.

The resin film 2 (polyimide resin P
The metal film 500 attached to I) has the following advantages. That is, when there is no metal film 500, since the resin film 2 is made of a polyimide resin, it absorbs moisture and elongates, and as shown in FIG. 6, the interval t between the contact pins 3a, 3a changes. There was something. Therefore, there is a problem that the contact pin 3a cannot contact a predetermined position of the electrode pad, and an accurate electrical test cannot be performed. In the present embodiment, the metal film 500 is adhered to the resin film 2 so that the change in the interval t is reduced even when the humidity changes, so that the contact pin 3a can be reliably brought into contact with a predetermined position of the electrode pad. Has become.

Note that a second resin film may be directly attached to the metal film 500. Thereby, an effect is obtained that it becomes a buffer material against tightening when the contact probe 1 is incorporated as the probe device 70 described later.

Next, with reference to FIGS. 4 to 8, a description will be given of a configuration in which the contact probe 1 is incorporated into a mechanical part 60 to form a probe device (probe card) 70. FIG.

FIG. 4 shows the contact probe 1 connected to an IC.
FIG. 5 is a diagram showing a probe cut into a predetermined shape as a probe, and FIG. 5 is a cross-sectional view taken along line CC of FIG. 4. As shown in FIGS. 4 and 5, the resin film 2 of the contact probe 1 has holes 9 for fixing the contact probe 1.
And a window 11 for transmitting a signal obtained from the pattern wiring 3 to the printed circuit board 20 (see FIG. 7) via the lead wiring 10.

The contact probe 1 according to the present embodiment functions as a flexible substrate when incorporated in a probe device because the contact probe 1 as a whole is flexible and easily bent.

The mechanical part 60 includes a mounting base 30, a top clamp 40, and a bottom clamp 50. First, the top clamp 40 is mounted on the printed circuit board 20, and then the mounting base 30 to which the contact probe 1 is mounted is mounted on the top clamp 40 by screwing a bolt 42 into a bolt hole 41 (see FIG. 8). And the bottom clamp 5
0, the contact probe 1 is held down to keep the pattern wiring 3 in a constant inclined state, and the contact pin 3a located at the tip of the pattern wiring 3 is connected to the IC chip I.
Press against

FIG. 8 shows the probe device 70 after the assembly is completed. FIG. 9 is a sectional view taken along line EE of FIG. The distal end side of the resin film 2 contacts the lower surface 32 of the mounting base 30 and is supported in a downwardly inclined state, and the contact pins 3 a are in contact with the IC chip I.

The mounting base 30 is provided with a positioning pin 31 for adjusting the position of the contact probe 1. By inserting the positioning pin 31 into the positioning hole 4 of the contact probe 1, a pattern is formed. The wiring 3 and the IC chip I can be accurately positioned. The pattern wiring 3 in the portion of the window 11 provided in the contact probe 1
Then, the elastic body 51 of the bottom clamp 50 is pressed to contact the lead wiring 10 with the electrode 21 of the printed circuit board 20, and the signal obtained from the pattern wiring 3 is applied to the electrode 21.
Can be communicated to the outside.

The probe device 70 configured as described above
When a probe test or the like of the IC chip I is performed using the IC chip I, the probe device 70 is mounted on a prober and electrically connected to a tester, and a predetermined electric signal is transmitted from the contact pins 3a of the pattern wiring 3 to the IC on the wafer. By sending the signal to the chip I, the output signal from the IC chip I is transmitted from the contact pin 3a to the tester,
The electrical characteristics of chip I are measured.

In the first embodiment described above,
Although the contact probe 1 is applied to the probe device 70 as a probe card, the contact probe 1 may be applied to another measuring jig or the like. For example, the present invention may be applied to an IC chip test socket or the like mounted on an IC chip burn-in test device or the like for holding and protecting the IC chip inside.

Next, a second embodiment will be described with reference to FIG. The distal end portion of the contact pin 3a of the contact probe 1 according to the present embodiment has a smaller width dimension wc and a smaller thickness dimension tc than its base end portion.

Here, in order to form the width dimension wc and the thickness dimension tc at the tip end of the contact pin 3a smaller than the base end, etching is performed. This etching step is performed after the above-described separation step. Examples of the etching method include an electrolytic etching method and an immersion method in a Ni solution such as hydrogen peroxide. In the electrolytic etching method, a voltage of 2 to 5 V is applied by using a mixed solution of sulfuric acid and phosphoric acid for about 30 seconds to 5 minutes.
This is performed by immersing in the solution i for about 3 to 30 minutes. The width dimension wc and the thickness dimension tc of the tip can be controlled by adjusting the voltage and the energizing time in the electrolytic etching method and the immersion time in the immersion method.

The contact pin 3a of the present embodiment corresponds to FIG.
As shown in FIG. 0, since the tip portion gradually becomes thinner three-dimensionally toward the tip side, the contact pressure with respect to the electrode pad can be increased as compared with the contact pin 3a according to the first embodiment. Therefore, the amount of overdrive of the contact pins 3a with respect to the electrode pads during scrubbing can be reduced as compared with the first embodiment. Thereby, wear and damage of the tip of the contact pin 3a are reduced, and the life can be extended.

In the case of the method based on the change of the mask shape as in the first embodiment, the patterning is limited as the narrow pitch advances, and the inconvenience of the contact pin 3a, such as the tip portion (narrow portion) being crushed, is disadvantageous. On the other hand, such a problem does not occur in the etching process of the present embodiment. By appropriately changing the etching conditions,
The contact pin 3a can be sharply pointed without crushing the tip.

Next, a third embodiment will be described with reference to FIGS. In the present embodiment, a contact probe 1 (see FIG. 4) cut into a predetermined shape for an IC probe in the first embodiment is replaced with an L probe.
The contact pin 3a is cut out into a predetermined shape for a CD probe, and the tip end of the contact pin 3a is formed to have a smaller width than the base end, as in the first embodiment. The contact probe cut out for the LCD probe is indicated by reference numeral 200 in FIGS. 11 to 13, and 201 is a resin film obtained by attaching a metal film to a polyimide resin.

As shown in FIG. 13, an LCD probe device (probe device) 100 has a structure in which a contact probe holding member 110 and the contact probe holding member 110 are fixed to a frame frame 120. (A plurality of contact probe holding bodies 110 are actually attached, but only one is shown here.) The tip of the contact pin 3 a protruding from the contact probe holding body 110 is an electrode of an LCD (liquid crystal display) 90. It comes into contact with a pad (not shown).

As shown in FIG. 12, the contact probe holding body 110 has a top clamp 111 and a bottom clamp 115. The top clamp 111 has a first projection 112 for holding the tip of the contact pin 3a, a second projection 113 for holding a terminal 301 on the TABIC (circuit) 300 side as a driver IC, and a third projection 114 for holding a lead.

The contact probe 200 is placed on the bottom clamp 115, and the terminal 301 of the TABIC 300 is connected to the resin film 20 of the contact probe 200.
It is placed so as to be located between 1,201. After that, the top projection 111 is attached to the first protrusion 112 by the resin film 20.
1 and the second projection 113 is assembled with a mounting bolt such that the second projection 113 contacts the terminal 301.

As shown in FIG. 12, the contact probe 200 is assembled, and the top clamp 111 and the bottom clamp 115 are combined with the bolt 130, whereby the contact probe holding body 110 is manufactured.

LC using LCD probe device 100
The electrical test of the D90 is performed by using the LCD probe device 100.
While the tip of the contact pin 3a is in contact with an electrode pad (not shown) of the LCD 90, the TABIC 300 is driven to send various test signals, and a signal obtained from the contact pin 3a in response to the signal. TABIC3
This is done by taking out to the outside through 00.

In the above-described LCD probe device 100, the distal end portion of the contact pin 3a is formed to have a smaller width than the base end portion thereof. Even if the width of the electrode itself is reduced, it is possible to reduce the width of the tip of the contact pin beyond the width of the electrode pad. Thereby, even if the position of the contact pin is slightly shifted with respect to the electrode pad, electrical continuity can be established with the electrode pad.
In this case, since only the required width of the base end of the contact pin can be ensured, problems in patterning and strength can be minimized.

In this case, it is needless to say that the distal end portion of the contact pin may be formed to have a smaller width and thickness than the base end portion, as in the second embodiment (hereinafter, referred to as the contact pin). The same applies to the embodiment described above.

[0058]

According to the contact probe of the present invention, the width of the tip of the contact pin is formed smaller than the width of the base of the contact pin. Even if the width dimension of the contact pad is reduced, it is possible to reduce the width dimension of the tip of the contact pin beyond the width dimension of the electrode pad. Thereby, even if the position of the contact pin is slightly shifted with respect to the electrode pad, electrical continuity can be established with the electrode pad. In this case, since only the required width of the base end of the contact pin can be ensured, problems in patterning and strength can be minimized.

According to the contact probe of the second aspect, the distal end portion of the contact pin is formed to have not only the width dimension but also the thickness dimension smaller than the base end portion, and the contact pin gradually moves toward the distal end side. Since it is thin and sharp in dimension, the area of the portion in contact with the electrode pad can be made smaller, and the contact pressure on the electrode pad can be made higher than that of a conventional general contact pin. Therefore, the amount of overdrive of the contact pins with respect to the electrode pads at the time of scrubbing can be reduced as compared with the conventional general one. Thereby, abrasion and damage of the contact pin tip are reduced, and the life can be extended.

According to the method for manufacturing a contact probe of the third aspect, the shape of the contact pin forming portion of the mask used in the plating process is the same as the width dimension of the tip forming portion of the contact pin. Since the width is smaller than the width of the base end forming portion, the width of the front end of the contact pin formed in the same step can be formed smaller than the base end. According to this manufacturing method, since it is only necessary to change the shape of the conventional mask, it can be manufactured relatively easily.

According to a fourth aspect of the present invention, there is provided a contact probe manufacturing method comprising the step of etching the tip of the contact pin so as to form a width dimension and a thickness dimension smaller than the base end. Therefore, by the same process, the tip of the contact pin is gradually sharpened three-dimensionally toward the tip. According to the method based on the change of the mask shape described above, there is a possibility that the patterning is limited as the pitch becomes narrower and the tip portion (narrow portion) of the contact pin is crushed. The effect that such a problem does not occur is obtained.

According to the contact probe of the fifth aspect, even if the film is, for example, a resin film which easily expands by absorbing moisture, a metal film is provided directly on the film. Therefore, the elongation of the film is suppressed by the metal film. Furthermore, the metal film can be used as a ground, thereby enabling impedance matching to be performed near the tip of the contact probe and preventing adverse effects due to reflected noise even when performing a test in a high frequency range. it can.

According to the contact probe of the sixth aspect, the metal film attached to the film is provided up to the vicinity of the contact pin in a direction along the film surface, and the metal film is grounded to the vicinity of the contact pin. Since it functions, the deviation of the characteristic impedance from the substrate wiring side can be minimized to the vicinity of the contact pin tip, and malfunction due to reflected noise can be suppressed.

According to the contact probe of the present invention, since the second film is directly attached to the metal film, the contact film serves as a cushioning material against tightening when the contact probe is incorporated as a probe card. The effect described above can be obtained. Therefore,
Damage to the wiring pattern during assembling can be reduced.

[Brief description of the drawings]

FIG. 1 is an enlarged perspective view of a main part showing a contact pin in a first embodiment of a contact probe according to the present invention.

FIG. 2 is a perspective view of a main part showing the contact probe.

FIG. 3 is a fragmentary cross-sectional view showing a method for manufacturing the contact probe in the order of steps;

FIG. 4 is a plan view showing the contact probe.

FIG. 5 is a sectional view taken along line CC of FIG. 4;

FIG. 6 is a front view for explaining a metal film in the contact probe.

FIG. 7 is an exploded perspective view showing an example of a probe device incorporating the contact probe.

FIG. 8 is a perspective view of a main part showing an example of the probe device.

FIG. 9 is a sectional view taken along line EE of FIG. 8;

FIG. 10 is an enlarged perspective view of a main part showing a contact pin in a second embodiment of the contact probe according to the present invention.

FIG. 11 is a perspective view showing a contact probe in a third embodiment of the probe device according to the present invention.

FIG. 12 is a sectional view taken along line AA of FIG. 11;

FIG. 13 is an exploded perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 14 is a perspective view showing a third embodiment of the probe device according to the present invention.

FIG. 15 is a perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 16 is a sectional view of FIG.

FIG. 17 is a longitudinal sectional view showing a contact pin of a conventional contact probe.

FIG. 18 is a front view showing contact pins and electrode pads.

19A is a front view showing a conventional contact pin and an electrode pad, FIG. 19B is a front view showing a contact pin and an electrode pad having a narrow pitch, and FIG. 19C is a front view showing a defect in FIG. It is.

FIG. 20 shows a step of forming contact pins.
FIG. 9 is a cross-sectional view of a main part showing a defect when the aspect ratio is high.

[Explanation of symbols]

Reference Signs List 1 contact probe 2 film (resin film) 3 pattern wiring 3a contact pin 5 substrate layer 6 first metal layer 7 mask 7a unmasked portion 500 metal film L length of contact pin protruding from metal film N second Metal layer tc Thickness dimension of the tip of the contact pin Wa Width dimension of the tip of the contact pin Wb Width dimension of the base end of the contact pin Wc Width dimension of the tip of the contact pin

Continued on the front page. (72) Inventor Hideaki Yoshida, Techno Park 12-12, Mita City, Hyogo Prefecture. Ryo Material Co., Ltd. Mita Plant

Claims (7)

[Claims] 1. A plurality of pattern wirings (3) are formed on a film (2), and each tip of the pattern wirings (3) is arranged so as to protrude from the film (2) to form contact pins (3a). In the contact probe (1), a tip portion of the contact pin (3a) is formed to have a smaller width dimension (wa) than a base end portion thereof. 2. A plurality of pattern wirings (3) are formed on a film (2), and each tip of the pattern wirings (3) is arranged so as to protrude from the film (2), and is provided with a contact pin (3a). In the contact probe (1), the contact pin (3a) has a distal end portion formed to have a width (wc) and a thickness (tc) smaller than a base end thereof. probe. 3. A plurality of pattern wirings (3) are formed on a film (2), and each end of the pattern wirings (3) is arranged so as to protrude from the film (2) to form a contact pin (3a). A method of manufacturing a contact probe (1), wherein a width dimension (wa) of a tip portion of the contact pin (3a) is formed smaller than a base end portion thereof, A first metal layer (6) of a material which is adhered to or bonded to the material (N) of the contact pin (3a);
Forming a first metal layer, and applying a mask (7) on the first metal layer (6) and providing the unmasked portion (7a) to the contact pin (3a). A plating step of plating the second metal layer (N) to form the pattern wiring (3); and the second metal layer (N) from which the mask (7) is removed.
A film applying step of applying the film (2) covering a portion other than a portion provided for the contact pin (3a) on the pattern wiring (3) comprising: the film (2) and the pattern wiring (3), the substrate layer (5), and the first metal layer (6).
And a separating step of separating the contact pin (3a) from the tip of the contact pin (3a) in the mask (7) used in the plating step. A method of manufacturing a contact probe, wherein the width of the portion is formed smaller than the width of the base end forming portion. 4. A plurality of pattern wirings (3) are formed on a film (2), and each end of the pattern wirings (3) is arranged so as to protrude from the film (2) to form a contact pin (3a). A method of manufacturing a contact probe (1), wherein a width dimension (wc) and a thickness dimension (tc) of a tip portion of the contact pin (3a) are formed smaller than a base end portion thereof. (5) A first metal layer (6) of a material which is adhered to or bonded to the material (N) of the contact pin (3a).
Forming a first metal layer, and applying a mask (7) on the first metal layer (6) and providing the unmasked portion (7a) to the contact pin (3a). A plating step of plating the second metal layer (N) to form the pattern wiring (3); and the second metal layer (N) from which the mask (7) is removed.
A film applying step of applying the film (2) covering a portion other than a portion provided for the contact pin (3a) on the pattern wiring (3) comprising: the film (2) and the pattern wiring (3), the substrate layer (5), and the first metal layer (6).
And an etching step of etching the tip end of the contact pin (3a) to form a width dimension (wc) and a thickness dimension (tc) smaller than the base end thereof. And a method for manufacturing a contact probe. 5. The contact probe (1) according to claim 1, wherein the contact probe (1).
A contact probe, wherein a metal film (500) is directly attached to the film (2). 6. The contact probe (1) according to claim 5, wherein the metal film (5) is attached to the film (2).
00) is a contact probe provided in the direction along the surface of the film (2) up to the vicinity of the contact pin (3a). 7. The contact probe according to claim 5, wherein a second film is provided directly on the metal film (500).