JPH10298757A - Film thickness controller - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a film having the same thickness as that of a crystal oscillator by rotating the crystal oscillator and a substrate support at the same speed and arranging the crystal oscillator flush with or slightly behind the outer wall surface of the substrate support close to the center of the support in the vertical direction. SOLUTION: The vacuum chamber 11 of the film thickness controller is opened, and a substrate, e.g. a flat glass sheet, is supported on a substrate support 12. The crystal oscillator 15 supported by the support 12 is rotated at the same speed as the support 12 and positioned flush with or slightly behind the outer wall surface of the support 12 close to the center of the support 12 in the vertical direction. The vacuum chamber 11 is then evacuated, the inside of the chamber 11 is filled with a gaseous argon atmosphere, and the substrate is treated. Subsequently, a film substance is deposited on the substrate, a film thickness reader 18 is operated to measure the film thickness of the crystal oscillator 15, and the film forming operation is stopped when a specified film thickness is reached.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in an apparatus for controlling the thickness of a metal film or a compound thin film.

[0002]

2. Description of the Related Art Conventionally, there are a sputtering method, a vacuum deposition method, an ion plating method and the like for applying a thin film on a substrate. For example, according to the sputtering method, FIGS.
As shown in (1), a substrate support 3 for supporting a substrate 2 is rotatably arranged in a vacuum chamber 1, and a quartz oscillator 4 for measuring a film pressure is fixed to an inner wall of the vacuum chamber 1, and The film forming material is configured to be sputtered toward the substrate 2. The film forming material 6 is configured to adhere to the quartz oscillator 4, the film material attached to the quartz oscillator 4 is read by a film thickness reader 5, and a film having a desired thickness is attached to the substrate. It is configured to check whether or not it is

[0003]

However, according to the film thickness control device described above, the quartz oscillator 4 is fixedly arranged in the vacuum chamber 1 separately from the rotatable substrate support 3 for supporting the substrate 2. Therefore, there is a difference between the film to be deposited on the quartz oscillator 4 and the substrate 2 and there is a disadvantage that a film having a desired thickness cannot be deposited on the substrate.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has been made in view of the above circumstances. It is an object to provide a thickness control device.

[0005]

According to the first aspect of the present invention, a substrate support is rotatably disposed in a vacuum chamber, and a film material is formed on a substrate supported by the substrate support. To a film thickness control device. Also, the crystal oscillator is configured to rotate on the substrate support at the same speed as the substrate support. It is configured to be located at the rear. According to the same film thickness control device, the film material to be applied to the substrate and the crystal unit for measuring the film thickness is constantly the same, and as a result, the film material having a desired film thickness can be applied to the substrate.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to FIGS. In FIG. 1, reference numeral 11 denotes a vacuum chamber having a height of about 0.5 m and a diameter of about 0.5 m, for example. The vacuum chamber 11 is made of, for example, stainless steel. Reference numeral 12 denotes a substrate support rotatably disposed in the vacuum chamber 11, and has a height of, for example, 0.1 mm.
It is configured to have a diameter of about 4 m and a diameter of about 0.35 m. The vacuum chamber 11 is made of, for example, stainless steel and has a drum shape.

Reference numeral 13 denotes a rotating mechanism of the vacuum chamber, which is configured to be driven by a motor. The vacuum chamber is set, for example, at 42 revolutions per minute. Reference numeral 14 denotes a target arranged in a vacuum chamber, which is made of, for example, tantalum or titanium. For example, the film is formed by a sputtering method. 1
Reference numeral 5 denotes a crystal oscillator supported on the substrate support, which is configured to rotate at the same speed as the substrate support.
Also, the crystal oscillator is located near the center of the substrate support in the vertical direction,
It is located at the same or slightly behind the outer wall surface of the substrate support. As shown in FIG. 3, the crystal unit 15 is supported by a holder 16, a cooling pipe 17 is provided around the holder 16, and the crystal unit 15 is cooled through the holder 16. is there.

Reference numeral 18 denotes a film thickness reader which reads and displays the film thickness adhered to the crystal unit. Reference numeral 19 denotes a cooler for cooling the crystal unit. Cooling water cooled by the cooler circulates through a pipe, cools a holder covering the crystal unit, and cools the crystal unit through cooling of the holder. . Further, the heat resistance temperature of the crystal unit is 450 degrees or less, but in this apparatus, it is configured to be about 140 degrees. Reference numeral 20 denotes a terminal portion which is configured to constantly transmit information on the film thickness detected from the quartz oscillator to the film thickness reader while the substrate support is rotating.

Next, the operation of the film thickness control device will be described. Open the vacuum chamber 11 in the film thickness control device,
A substrate such as a flat glass is supported on the substrate support 12. Next, the inside of the vacuum chamber 11 is evacuated and the inside of the vacuum chamber 11 is set to an argon gas atmosphere, and the substrate is treated. After that, the film material is deposited on the substrate and the film thickness reading device is operated to measure the film thickness of the crystal unit. When the film thickness reaches a predetermined film thickness, the film forming operation is stopped. In the case of a multilayer film, the above operation is repeated. When the deposition of the film is completed, the apparatus is stopped, the inside of the vacuum chamber is returned to the atmospheric pressure, the vacuum chamber is opened, the substrate is taken out, and the film forming operation is completed.

[0010]

Since the present invention is configured as described above,
There is a special effect that a film having a desired thickness can be applied to the substrate without causing a difference in the film thickness applied to the crystal oscillator and the substrate, and a product having desired characteristics can be obtained.

[Brief description of the drawings]

FIG. 1 is a side view of a film thickness control device of the present invention.

FIG. 2 is a plan view of a main part of the film thickness control device of FIG. 1;

FIG. 3 is a side view of a crystal unit in the film thickness control device of FIG. 1;

FIG. 4 is a side view of a conventional film thickness control device.

FIG. 5 is a plan view of the film thickness control device of FIG. 4;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Vacuum chamber 12 Substrate support 13 Rotation mechanism 14 Target 15 Quartz crystal oscillator 16 Holder 17 Cooling pipe 18 Film thickness reader 19 Cooler 20 Terminal part

Claims (1)

[Claims] 1. A film thickness control apparatus for arranging a substrate support rotatably in a vacuum chamber and forming a film material on a substrate supported by the substrate support. The crystal oscillator is configured to rotate at the same speed as the substrate support, and the crystal oscillator is located near the vertical center of the substrate support, flush with or slightly behind the outer wall surface of the substrate support. A film thickness control device, characterized in that the film thickness control device is arranged in such a manner as to be arranged.