JPH10294290A5 - - Google Patents

Info

Publication number
JPH10294290A5
JPH10294290A5 JP1997101190A JP10119097A JPH10294290A5 JP H10294290 A5 JPH10294290 A5 JP H10294290A5 JP 1997101190 A JP1997101190 A JP 1997101190A JP 10119097 A JP10119097 A JP 10119097A JP H10294290 A5 JPH10294290 A5 JP H10294290A5
Authority
JP
Japan
Prior art keywords
manufacturing
semiconductor device
heating
film formation
oxygen atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997101190A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10294290A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10119097A priority Critical patent/JPH10294290A/ja
Priority claimed from JP10119097A external-priority patent/JPH10294290A/ja
Publication of JPH10294290A publication Critical patent/JPH10294290A/ja
Publication of JPH10294290A5 publication Critical patent/JPH10294290A5/ja
Pending legal-status Critical Current

Links

JP10119097A 1997-04-18 1997-04-18 半導体装置の製造方法 Pending JPH10294290A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10119097A JPH10294290A (ja) 1997-04-18 1997-04-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10119097A JPH10294290A (ja) 1997-04-18 1997-04-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH10294290A JPH10294290A (ja) 1998-11-04
JPH10294290A5 true JPH10294290A5 (cg-RX-API-DMAC10.html) 2004-10-07

Family

ID=14294049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10119097A Pending JPH10294290A (ja) 1997-04-18 1997-04-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH10294290A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100646984B1 (ko) * 2000-06-30 2006-11-17 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성 방법
KR100447256B1 (ko) * 2002-06-29 2004-09-07 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP2004172259A (ja) 2002-11-19 2004-06-17 Oki Electric Ind Co Ltd 半導体素子の製造方法

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