JPH10293321A - Liquid crystal display and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal display capable of forming source wiring, a source electrode and a drain electrode by a single patterning process without increasing contact resistance between the drain electrode and a picture element electrode. SOLUTION: Gate wiring, a gate insulation film 4, a semiconductor layer 5 and a contact layer 6 are consecutively formed on a transparent insulation substrate 1. After an oxide film such as an Ir has filmed a conductive metal, the source wiring, the source electrode 8 and the drain electrode 9 are formed by patterning. Simultaneously, an 'n' layer a-Si of the portions not covered with the source electrode 8 and the drain electrode 9 are etched. A inter layer insulation film 10 including a contact hole 11 is then formed on the drain electrode 9. After forming last an ITO(indium.titanium oxide) film, a picture element electrode 12 electrically connected to the drain electrode 9 is formed by patterning through the contact hole 11 formed on the drain electrode 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix display device, and more particularly to an active matrix display device having a thin film transistor (hereinafter, referred to as a TFT) as a switching element and a method of manufacturing the same.

[0002]

2. Description of the Related Art In a display device, a display material such as a liquid crystal is usually sandwiched between two opposing transparent insulating substrates, and a voltage is selectively applied to the display material. At least one of the substrates is an array substrate on which a pixel electrode made of a transparent conductive film, a switching element such as a thin film transistor for applying a predetermined voltage to the pixel electrode, and a signal wiring for giving a signal to the switching element are formed.

FIGS. 40 and 41 are a plan view and a cross-sectional view showing a process of manufacturing an array substrate of a liquid crystal display device in which a pixel electrode is formed above a liquid crystal side of a gate wiring and a source wiring for supplying a signal to a thin film transistor. . First,
As shown in FIGS. 40-a and 41-a, a gate wiring 2 having a gate electrode 3 is formed on a transparent insulating substrate 1. Next, as shown in FIGS. 40-b and 41-b,
SiN, i-layer a- to become gate insulating film 4 by CVD method
After continuously forming Si and an n-layer a-Si, the i-layer a-Si and the n-layer a-Si are patterned by using a dry etching method, and a semiconductor layer (i-layer a-Si) 5 and a contact layer (n-layer a-S)
i) Form 6.

Next, a source wiring 7 having a source electrode 8 is formed.
In order to form the drain electrode 9, as shown in FIGS. 40-c and 41-c, ITO (Indium Tin Oxi
After de) is formed, patterning is performed to form a lower layer 7a of the source wiring 8 and a lower layer 8a, 9a of the source electrode 8 and the drain electrode 9 on the contact layer 6 by patterning. continue,
As shown in FIGS. 40-d and 41-d, a metal having a small specific resistance is formed and then patterned to form upper layers 7b, 8 of the source wiring 7, the source electrode 8, and the drain electrode 9.
b and 9b are formed. Here, the upper layer 9 of the drain electrode 9
b is formed only in a predetermined region on the lower layer 9a.
a and the upper layer 9b are not the same in pattern shape, so that the source wiring 7, the source electrode 8, and the lower electrode 7
The patterning of a, 8a, 9a and the upper layers 7b, 8b, 9b must be performed separately. Then, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is
Is etched.

Next, as shown in FIGS. 40-e and 41-e, an interlayer insulating film is applied, and a contact hole 11 is formed on the lower layer 9a made of an ITO film of the drain electrode 9 by photolithography. Thereafter, firing is performed to form the interlayer insulating layer 10. Finally, as shown in FIGS. 40F and 41F, ITO is formed as a transparent conductive film by a sputtering method, and then patterned by a dry etching method to form a pixel electrode 12. At this time, the pixel electrode 12 is electrically connected to the drain electrode 9 via the contact hole 11 formed on the lower layer 9a of the drain electrode 9.

[0006]

The array substrate in which the pixel electrode is formed above the liquid crystal side of the gate wiring and the source wiring for supplying a signal to the thin film transistor is formed by the above-described steps, and the source wiring 7 and the source electrode are formed. 8 and a lower layer 7a, 8a, 9a and an upper layer 7b of the drain electrode 9;
The patterning of each of 8b and 9b is performed separately because the lower layer 9a and the upper layer 9b of the drain electrode 9 are simultaneously patterned, and the upper layer 9b of the drain electrode 9 made of a metal having a low specific resistance is formed at the contact portion with the pixel electrode 12. When formed, the upper layer 9b is exposed to an oxygen atmosphere during the formation of the transparent conductive film constituting the pixel electrode 12, and an oxide film having an insulating property is formed on the surface thereof, so that the drain electrode 9 and the pixel electrode 12 are formed. Of the pixel electrode 12
This is because the upper layer 9b is not formed in the region on the drain electrode 9 where the contact hole 11 to be a contact portion with the substrate is formed, and only the lower layer 9a whose oxide film is made of a conductive metal is formed. As a result, the patterning step of the source wiring 7, the source electrode 8, and the drain electrode 9 is required twice, which increases the number of manufacturing steps and lowers productivity.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and a source line, a source electrode and a drain electrode are patterned once without increasing the contact resistance between the drain electrode and the pixel electrode. It is an object to provide a liquid crystal display device that can be formed in a process.

[0008]

A liquid crystal display device according to the present invention is formed of a transparent insulating substrate, a control electrode and control electrode wiring, a semiconductor layer, and a control electrode and control electrode wiring and the semiconductor layer. Insulating film, the oxide film is formed of a metal having conductivity, the first electrode constituting the semiconductor element together with the semiconductor layer, the first electrode wiring and the second electrode, the first electrode, the first electrode The electrode wiring and the interlayer insulating film formed on the second electrode, and the control electrode, the control electrode wiring and the first electrode, the first electrode wiring, formed in a layer above the second electrode, the interlayer insulating film A first substrate having a pixel electrode made of a transparent conductive film electrically connected to the second electrode through a provided contact hole; and a second substrate sandwiching a liquid crystal material with the first substrate. It is a thing.

Alternatively, a transparent insulating substrate, a control electrode and a control electrode wiring, a semiconductor layer, an insulating film formed between the control electrode and the control electrode wiring and the semiconductor layer, and a metal having an oxide film having conductivity. The surface is formed, the first electrode constituting the semiconductor element together with the semiconductor layer, the first electrode wiring and the second electrode, the first electrode, formed on the first electrode wiring and the second electrode The interlayer insulating film, the control electrode,
A transparent conductive layer formed above the control electrode wiring and the first electrode, the first electrode wiring, and the second electrode, and electrically connected to the second electrode through a contact hole provided in the interlayer insulating film. A first substrate having a pixel electrode made of a film,
It comprises a second substrate that holds a liquid crystal material together with the first substrate. The metal in which the oxide film forming the first electrode, the first electrode wiring, and the second electrode has conductivity is any of Ir, Nb, Os, Re, Rh, and Ru.

Further, the transparent insulating substrate, the control electrode and the control electrode wiring, the semiconductor layer, the insulating film formed between the control electrode and the control electrode wiring and the semiconductor layer, and the surface layer are formed of a conductive oxide film. A first electrode having a multilayer structure, a semiconductor element together with a semiconductor layer, a first electrode wiring and a second electrode, and the first electrode, the first electrode wiring and the second electrode The formed interlayer insulating film, the control electrode, the control electrode wiring and the first electrode, the first electrode wiring, formed in a layer above the second electrode, the second through the contact hole provided in the interlayer insulating film A first substrate having a pixel electrode made of a transparent conductive film electrically connected to the first electrode, and a second substrate sandwiching a liquid crystal material with the first substrate. The conductive oxide film forming the first electrode, the first electrode wiring, and the second electrode is made of IrO ₂ , Nb
O, OsO ₂ , ReO ₂ , ReO ₃ , RhO ₂ , RuO
₂ , a metal film of any of MoO ₂ , Ti ₄ O ₇ , VO ₂ and CrO ₂ .

Also, a transparent insulating substrate, a control electrode and a control electrode wiring, a semiconductor layer, an insulating film formed between the control electrode and the control electrode wiring and the semiconductor layer, a transparent conductive film on a surface layer, A first electrode, a first electrode wiring and a second electrode, which have a multilayer structure having a reduced metal film of a transparent conductive film as a lower layer of the layer and constitute a semiconductor element together with a semiconductor layer, and the first electrode An interlayer insulating film formed on the first electrode wiring and the second electrode, and a control electrode, the control electrode wiring and the first electrode, the first electrode wiring, formed above the second electrode; A first substrate having a pixel electrode made of a transparent conductive film electrically connected to a second electrode through a contact hole provided in the insulating film; and a second substrate sandwiching a liquid crystal material with the first substrate. It has a substrate. Further, the reduced metal film of the transparent conductive film forming the first electrode, the first electrode wiring, and the second electrode is In, Sn
And a metal film made of Zn.

Further, a semiconductor element is formed together with the transparent insulating substrate, the control electrode and the control electrode wiring, the semiconductor layer, the insulating film formed between the control electrode and the control electrode wiring and the semiconductor layer, and the semiconductor layer. A first electrode, a first electrode wiring and a second electrode, a first electrode, an interlayer insulating film formed on the first electrode wiring and the second electrode, a control electrode,
A control electrode wiring, a first electrode, a first electrode wiring, a pixel electrode formed of a transparent conductive film formed on a layer above the second electrode and formed on the interlayer insulating film, and an interlayer insulating film formed after the pixel electrode is formed. A first substrate having a contact hole in which a conductive film is formed or filled with a conductive resin on the inner wall, and a second substrate that sandwiches a liquid crystal material together with the first substrate. The second electrode and the pixel electrode are electrically connected via a metal film formed on the substrate or a conductive resin filled in a contact hole.

Further, a method of manufacturing a liquid crystal display device according to the present invention includes a step of forming a control electrode and a control electrode wiring on a transparent insulating substrate; and a step of forming an insulating film on the control electrode and the control electrode wiring. Forming a semiconductor layer on the control electrode via an insulating film, forming a metal having an oxide film on the semiconductor layer having conductivity, etching the first electrode, the first electrode wiring and Forming a second electrode, forming an interlayer insulating film on the first electrode, the first electrode wiring and the second electrode, and using photolithography for the interlayer insulating film on the second electrode. Forming a contact hole, and forming a transparent conductive film on the interlayer insulating film, and etching the pixel electrode to be electrically connected to the second electrode through the contact hole provided in the interlayer insulating film. Is formed.

Alternatively, a step of forming a control electrode and a control electrode wiring on a transparent insulating substrate, a step of forming an insulating film on the control electrode and the control electrode wiring, and a step of forming a semiconductor layer on the control electrode via the insulating film Forming a multilayer film having a conductive metal film as an oxide film as a surface layer on the semiconductor layer, simultaneously etching the multilayer film, the first electrode, the first electrode wiring and the Forming a second electrode, forming an interlayer insulating film on the first electrode, the first electrode wiring and the second electrode, and forming a contact hole in the interlayer insulating film using photolithography. Forming a pixel electrode electrically connected to the second electrode through a contact hole provided in the interlayer insulating film by forming a transparent conductive film on the interlayer insulating film and etching the film. It is a thing.

Alternatively, a step of forming a control electrode and a control electrode wiring on a transparent insulating substrate, a step of forming an insulating film on the control electrode and the control electrode wiring, and a step of forming a semiconductor layer on the control electrode via the insulating film Forming a metal film on the semiconductor layer, and simultaneously etching to form a first electrode, a first electrode wiring and a second electrode, the first electrode, the first electrode A step of forming an interlayer insulating film on the electrode wiring and the second electrode, a step of forming a transparent conductive film on the interlayer insulating film and forming a pixel electrode by etching, and a step of forming an interlayer insulating film on the second electrode Forming a contact hole in the film and the transparent conductive film, and forming a metal film on the inner wall of the contact hole or filling a conductive resin in the contact hole to electrically connect the second electrode and the pixel electrode Is included.

Further, the first electrode has a terminal portion formed by a metal film constituting the first electrode, the first electrode wiring, and the second electrode. Alternatively, the first electrode has a terminal portion formed of a transparent conductive film forming a pixel electrode, and the first electrode wiring is formed by a method similar to the above-described method for connecting the second electrode and the pixel electrode. The transparent conductive film is electrically connected.

The control electrode has a terminal portion formed of a film having the same configuration as the first electrode and the second electrode. Alternatively, the control electrode has a terminal portion formed of a transparent conductive film forming a pixel electrode, and the first electrode and the second electrode are connected in the same manner as the method for connecting the second electrode and the pixel electrode. The control electrode wiring having the same configuration as the two electrodes is electrically connected to the transparent conductive film. Alternatively, the control electrode has a terminal portion formed of a transparent conductive film forming a pixel electrode, forming a metal film forming a first electrode wiring on the control electrode wiring, and forming the second electrode on the control electrode wiring. In this case, the control electrode wiring and the transparent conductive film are electrically connected via the metal film forming the first electrode wiring by the same method as the method for connecting the pixel electrode to the control electrode wiring.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1 FIG. Hereinafter, a liquid crystal display device according to an embodiment of the present invention will be described with reference to the drawings. 1 and 2 are a plan view and a cross-sectional view showing a process for manufacturing an array substrate of a liquid crystal display device equipped with a thin film transistor (TFT) as a switching element according to the first embodiment of the present invention. In the figure, 1 is a transparent insulating substrate, 2 is a transparent insulating substrate 1
A gate wiring (control electrode wiring) having a gate electrode (control electrode) 3 formed thereon is denoted by 4, a gate insulating film formed on the gate wiring 2 and the gate electrode 3, and 5 is a gate via the gate insulating film 4. I-layer a-Si formed on electrode 3
A contact layer 6 made of an n-layer a-Si formed on the semiconductor layer 5; a source line 8;
9 is a source electrode (first electrode) and a drain electrode (second electrode) formed on the contact layer 6, 10 is an interlayer insulating film formed on the source electrode 8 and the drain electrode 9, and 11 is a drain electrode A contact hole formed in the interlayer insulating film on 9 and 12 is a pixel electrode.

Next, a method of manufacturing the array substrate of the liquid crystal display according to the present embodiment will be described. First, FIG.
As shown in FIG. 2A and FIG. 2A, an Al alloy is formed on the transparent insulating substrate 1 by a sputtering method, and then patterned using a phosphoric acid, nitric acid, and acetic acid-based etchant to form a gate wiring 2 and a gate electrode 3. To form Next, FIG.
As shown in FIG. 2B and FIG. 2B, after successively forming SiN, i-layer a-Si, and n-layer a-Si to be the gate insulating film 4 by the CVD method, the i-layer is formed by dry etching. The a-Si and the n-layer a-Si are patterned to form a semiconductor layer (i-layer a-Si) 5 and a contact layer (n-layer a-Si) 6 above the gate electrode 3.

Next, as shown in FIG. 1C and FIG. 2C, after forming an Ir film by a sputtering method, it is patterned by a dry etching method, and a source electrode is formed on the source wiring 7 and the contact layer 6. 8 and a drain electrode 9 are formed. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Next, as shown in FIGS. 1D and 2D, a photosensitive resin is applied, and the drain electrode 9 is formed using a photoengraving method.
After forming the contact hole 11 thereon, it is baked to form the interlayer insulating film 10. FIG. 7A shows a flow chart of forming the contact hole 11 in the interlayer insulating film 10 by the above-described process.
Finally, as shown in FIGS. 1F and 2F, ITO is formed as a transparent conductive film by a sputtering method, and then patterned by a dry etching method to form a pixel electrode 12.
To form At this time, the pixel electrode 12 is electrically connected to the drain electrode 9 via the contact hole 11 formed on the drain electrode 9. Through the above steps,
An array substrate of a liquid crystal display device is formed.

The material constituting the gate wiring 2 and the gate electrode 3 may be any of Cr, Mo, Ta and Cu. Further, the source wiring 7 and the source electrode 8,
The material constituting the drain electrode 9 is Nb, Os, Re,
Any of Re, Rh, and Ru may be used. The material constituting the gate insulating film 4 is SiO ₂ , Al
An oxide film such as ₂ O ₃ or Ta ₂ O ₅ may be used. Alternatively, the interlayer insulating film 10 having the contact holes 11 may be formed by dry etching using a non-photosensitive resin. FIG. 7B shows a flow chart of forming the contact hole 11 in the interlayer insulating film 10 by the above process.

Before applying the photosensitive resin constituting the interlayer insulating film 10, a SiN film is formed by a CVD method as shown in FIGS. To form an insulating film 13 having a contact hole 14 on the drain electrode 9, and then apply a photosensitive resin as shown in FIGS. The interlayer insulating film 10 may be formed by forming the contact hole 11 at the same position as the contact hole 14 on the drain electrode 9 by using the method, and then firing the contact hole 11. FIG. 8A shows a flow chart of forming the contact holes 11 and 14 when the insulating film 13 is formed between the drain electrode 9 and the interlayer insulating film 10 by the above-described process.

Alternatively, before applying the photosensitive resin constituting the interlayer insulating film 11, FIGS.
As shown in FIG. 5, an insulating film 13 is formed by forming a SiN film by the CVD method, and then, as shown in FIGS. After forming a contact hole 11 above the drain electrode 9 by using the method, baking to form an interlayer insulating film 10, and then using the interlayer insulating film 10 as a mask, forming a contact hole 14 in the insulating film 13 by dry etching. May be. FIG.
-B shows the drain electrode 9 and the interlayer insulating film 10 by the above process.
Contact hole 1 when insulating film 13 is formed between
1 shows a flow diagram of the formation of 1 and 14.

According to the present invention, by forming the drain electrode 9 from a metal having an oxide film having conductivity, the drain electrode 9 is formed in an oxygen atmosphere when the transparent conductive film (ITO) forming the pixel electrode 12 is formed. Even if an oxide film is formed on the surface by exposure to water, the contact resistance between the drain electrode 9 and the pixel electrode 12 is not increased. A region may not be provided, and the source wiring 7, the source electrode 8, and the drain electrode 9 can be formed in one patterning step. Further, since it is not necessary to secure a region having a different layer structure as a contact portion with the pixel electrode 12 on the drain electrode 9, the area of the drain electrode 9 including the contact portion can be reduced. Also,
Since an ITO film is not used as a lower layer of the source electrode and the drain electrode, it is possible to prevent an adverse effect on the gate wiring due to an etchant for the ITO film.

Embodiment 2 In the first embodiment, the source wiring 7, the source electrode 8, and the drain electrode 9 are formed of a single layer film. However, as shown in FIGS. 9 and 10, the source wiring 7, the source electrode 8, and the drain electrode 9 are A high-melting point metal film of Cr, Mo, W or the like as a lower layer film, a metal film of any of Al, Ta and Cu as an intermediate layer film,
Ir, Nb, Os, Re, Rh and R as the uppermost film
The same effect as that of the first embodiment can be obtained even with a three-layer film structure made of a metal film made of any one of u. The other configuration is the same as that of the first embodiment, and the description is omitted.

FIGS. 9 and 10 show a process of manufacturing an array substrate of a liquid crystal display according to the second embodiment. A gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on a transparent insulating substrate 1 by the same method as in the first embodiment. Next, FIG.
And as shown in FIG. 10-a, Cr as the lowermost film,
High melting point metal film of Mo, W, etc., Al, Ta as intermediate layer film
Metal film made of any one of Cu and Cu, and I
After continuously forming a metal film of any one of r, Nb, Os, Re, Rh and Ru, a three-layer film is simultaneously patterned by using a dry etching method, and a source film is formed on the source wiring 7 and the contact layer 6. Electrode 8 and drain electrode 9
To form At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Next, as shown in FIGS. 9B and 10B, a resin is applied, a contact hole 11 is formed on the drain electrode 9 by using a photoengraving method, and then fired.
To form Finally, as shown in FIGS. 9C and 10C, ITO is formed as a transparent conductive film by a sputtering method, and then patterned by a dry etching method to form a pixel electrode 12. At this time, the pixel electrode 12
Is the contact hole 1 formed on the drain electrode 9
1 and electrically connected to the drain electrode 9. Through the above steps, an array substrate of the liquid crystal display device is formed.

Embodiment 3 In the first embodiment, the source wiring 7, the source electrode 8, and the drain electrode 9 are formed of a single-layer film. However, as shown in FIGS. 11 and 12, the source wiring 7, the source electrode 8, and the drain electrode 9 are A high melting point metal film such as Cr, Mo, W or the like as a lower layer film, a metal film made of any of Al, Ta and Cu as a first intermediate layer film, and Ir, Nb, Os, Re, R as a second intermediate layer film
h or Ru, and a metal film of IrO ₂ , NbO, OsO ₂ , ReO ₂ , ReO ₃ , R
The same effect as that of the first embodiment can be obtained even with a four-layer film structure made of a metal oxide film made of any one of hO ₂ , RuO ₂ , MoO ₂ , Ti ₄ O ₇ , VO ₂ and CrO ₂ .
The other configuration is the same as that of the first embodiment, and the description is omitted.

FIGS. 11 and 12 show a process of manufacturing an array substrate of a liquid crystal display according to the third embodiment. A gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on a transparent insulating substrate 1 by the same method as in the first embodiment. Next, FIG.
-A and FIG. 12-a, as the lowermost film, C
r, Mo, W, etc. high melting point metal film, A as first intermediate layer film
1, a metal film of any of Ta and Cu, a metal film of any of Ir, Nb, Os, Re, Rh and Ru as the second intermediate film, and IrO ₂ , Nb as the uppermost film
O, OsO ₂ , ReO ₂ , ReO ₃ , RhO ₂ , RuO
₂ , MoO ₂ , Ti ₄ O ₇ , after continuously forming a metal oxide film of any of VO ₂ and CrO ₂ , the four-layer film is simultaneously patterned using a dry etching method,
A source electrode 8 and a drain electrode 9 are formed on the source wiring 7 and the contact layer 6. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9
Is etched. Next, FIG. 11-b and FIG. 12-b
As shown in FIG. 5, a resin is applied, a contact hole 11 is formed on the drain electrode 9 by using a photoengraving method, and then baked to form an interlayer insulating film 10. Finally, as shown in FIGS. 11C and 12C, ITO is formed as a transparent conductive film by a sputtering method, and then patterned by a dry etching method to form a pixel electrode 12. At this time, the pixel electrode 12 is electrically connected to the drain electrode via the contact hole 11 formed on the drain electrode 9. Through the above steps, an array substrate of the liquid crystal display device is formed.

Embodiment 4 In the first embodiment, the source wiring 7, the source electrode 8, and the drain electrode 9 are formed of a single-layer film. However, as shown in FIG.
The source electrode 8 and the drain electrode 9 are made of a refractory metal film of Cr, Mo, W or the like as the lowermost film, and A as the intermediate film.
After forming a metal film of any of l, Ta, and Cu, and a metal film of any of Ir, Nb, Os, Re, Rh, and Ru as the uppermost film, an oxidation process is performed, and the surface layer becomes the uppermost film. The same effect as in the first embodiment can be obtained also in the case of a four-layer film structure made of a constituent metal oxide film. In addition,
The other configuration is the same as that of the first embodiment, and the description is omitted.

FIG. 13 shows a process of manufacturing the array substrate of the liquid crystal display according to the fourth embodiment. A gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on a transparent insulating substrate 1 by the same method as in the first embodiment. Next, as shown in FIG. 13-a, a refractory metal film such as Cr, Mo, W or the like as the lowermost film, a metal film of any of Al, Ta and Cu as the intermediate film, and Ir as the uppermost film. Nb, Os, Re,
A three-layer film 15 is formed by continuously forming a metal film of either Rh or Ru. Next, as shown in FIG. 13B, the substrate on which the three-layer film 15 is formed is heated, for example, in an oxygen atmosphere to oxidize the surface layer of the metal constituting the uppermost film. Next, as shown in FIG. 13C, the three-layer film 15 and the metal oxide film constituting the uppermost film formed by the oxidation treatment are simultaneously patterned by dry etching to form the source wiring 7 and the contact. A source electrode 8 and a drain electrode 9 are formed on the layer 6. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Thereafter, an interlayer insulating film 10 having a contact hole 11 and a pixel electrode 12 are formed by the same method as in Embodiment 1, and an array substrate of a liquid crystal display device is formed.

FIG. 14 shows another manufacturing process of the array substrate of the liquid crystal display device according to the fourth embodiment. A gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on a transparent insulating substrate 1 by the same method as in the first embodiment. Next, FIG.
As shown in FIG. 3A, a refractory metal film of Cr, Mo, W or the like as the lowermost film, a metal film of any of Al, Ta and Cu as the intermediate film, and Ir, Nb, O as the uppermost film.
A metal film of any one of s, Re, Rh and Ru is continuously formed to form a three-layer film 15. Next, FIG.
As shown in FIG. 2B, the three-layer film 1
5 are simultaneously patterned to form a source electrode 8 and a drain electrode 9 on the source wiring 7 and the contact layer 6. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Next, as shown in FIG. 14C, the substrate on which the three-layer film 15 has been formed is heated in, for example, an oxygen atmosphere to oxidize the surface layer of the metal constituting the uppermost film. Thereafter, an interlayer insulating film 10 having a contact hole 11 and a pixel electrode 12 may be formed by the same method as in Embodiment 1 to form an array substrate of a liquid crystal display device. The oxidation of the metal constituting the uppermost film may be performed in an oxygen plasma atmosphere.

Embodiment 5 In the first embodiment, the source wiring 7, the source electrode 8, and the drain electrode 9 are formed of a single-layer film. However, as shown in FIGS. 15 and 16, the source wiring 7, the source electrode 8, and the drain electrode 9 are A film of a high melting point metal such as Cr, Mo, W or the like as a film, a metal film of any of Al, Ta and Cu as a first intermediate film, and a metal film of any of In, Sn and Zn as a second intermediate film; ITO, InO, Sn as the top layer film
The same effect as in the first embodiment can be obtained with a four-layer film structure made of a metal oxide film of either O or ZnO, and the pixel electrode 1 is formed as the uppermost film of the drain electrode 9.
2, the contact resistance between the drain electrode 9 and the pixel electrode 12 can be further reduced. The other configuration is the same as that of the first embodiment, and the description is omitted.

FIGS. 15 and 16 show a process of manufacturing an array substrate of a liquid crystal display according to the fifth embodiment. A gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on a transparent insulating substrate 1 by the same method as in the first embodiment. Next, FIG.
As shown in -a, a refractory metal film of Cr, Mo, W, etc. as the lowermost film, and Al, Ta and C as the first intermediate film.
u as a metal film, In as a second intermediate layer film,
A four-layer film 16 is formed by continuously forming a metal film of any of Sn and Zn and a metal oxide film of any of ITO, InO, SnO and ZnO as an uppermost film. Next, as shown in FIGS. 15B and 16B,
The four-layer film 16 is simultaneously patterned by using the dry etching method, and the source electrode 8 and the drain electrode 9 are formed on the source wiring 7 and the contact layer 6. At the same time, n of the portion not covered by the source electrode 8 and the drain electrode 9
Etch layer a-Si. Next, as shown in FIGS. 15C and 16C, a resin is applied, a contact hole 11 is formed on the drain electrode 9 by using a photoengraving method, and then baked to form an interlayer insulating film 10. . Finally, FIG.
As shown in FIG. 5D and FIG. 16D, ITO is formed as a transparent conductive film by a sputtering method, and then patterned by a dry etching method to form a pixel electrode 12. At this time, the pixel electrode 12 is electrically connected via the contact hole 11 formed on the drain electrode 9. Through the above steps, an array substrate of the liquid crystal display device is formed.

Embodiment 6 FIG. 17 and 18 are a plan view and a cross-sectional view showing a process of manufacturing an array substrate of a liquid crystal display according to Embodiment 6 of the present invention. In the figure, 17 is a metal film formed on the inner wall of the contact hole 11, and 18 is a conductive resin filled in the contact hole. 1 and 2 are denoted by the same reference numerals and description thereof is omitted.

Next, a method of manufacturing the array substrate of the liquid crystal display according to the present embodiment will be described. Embodiment 1
Similarly, on the transparent insulating substrate 1, Al
After forming the alloy film, patterning is performed using a phosphoric acid, nitric acid and acetic acid-based etchant to form the gate wiring 2 and the gate electrode 3. Subsequently, after successively forming SiN, i-layer a-Si, and n-layer a-Si to be the gate insulating film 4 by the CVD method, the i-layer a-
The Si and the n-layer a-Si are patterned to form a semiconductor layer 5 and a contact layer 6 above the gate electrode 3. Subsequently, after Cr and Al are continuously formed, the source electrode 8 and the drain electrode 9 are formed on the source wiring 7 and the contact layer 6 by patterning. At the same time, the portion of the n-layer a-Si that is not covered with the source electrode 8 and the drain electrode 9 is etched (FIGS. 17A and 18A).

Next, as shown in FIGS. 17B and 18B, a resin is applied and baked to form an interlayer insulating film 10. Next, as shown in FIGS. 17C and 18C, ITO is formed as a transparent conductive film by a sputtering method, and then patterned by a dry etching method to form a pixel electrode 12. Next, FIG. 17-d and FIG.
As shown by -d, the pixel electrode 12 and the interlayer insulating film 10 on the drain electrode 9 are etched by using a dry etching method to form a contact hole 11. Next, as shown in FIG. 17-e and FIG. 18-e, a metal film 17 is formed on the inner wall of the contact hole 11 by forming a Cr film by sputtering and then patterning. Or, FIG.
20. As shown in FIG. 20, the contact hole 11 is filled with a conductive resin. Thus, the drain electrode 9 and the pixel electrode 12 are electrically connected by the metal film 17 formed on the inner wall of the contact hole 11 or the conductive resin 18 filling the contact hole 11. Through the above steps, an array substrate of the liquid crystal display device is formed.

The material forming the gate wiring 2 and the gate electrode 3 may be any of Cr, Mo, Ta and Cu. Further, the source wiring 7 and the source electrode 8,
The material forming the drain electrode 9 is Mo as a lower film,
High melting point metal such as W, or Ta or Cu may be used instead of Al as the upper layer film. Also, the drain electrode 9 and the pixel electrode 1
2 is electrically connected to the metal film 17 instead of Cr.
It may be formed using any metal of o, W and Ta.

According to the present embodiment, since the drain electrode 9 is not exposed when the transparent conductive film (ITO) forming the pixel electrode 12 is formed, the surface of the drain electrode 9 is formed in the pixel electrode 12 forming step. Since an oxide film serving as an insulator is not formed and the contact resistance between the drain electrode 9 and the pixel electrode 12 is not increased, the same effect as in the first embodiment can be obtained. Furthermore, by filling the contact portion between the drain electrode and the pixel electrode with the conductive resin 18 and flattening it, alignment defects can be reduced.

Embodiment 7 21 and 22 are a plan view and a cross-sectional view showing a process of manufacturing an array substrate of a liquid crystal display according to Embodiment 7 of the present invention. The reference numerals in the drawings are the same as those shown in FIGS.

Next, a method of manufacturing the array substrate of the liquid crystal display according to the present embodiment will be described. Embodiment 1
Similarly, on the transparent insulating substrate 1, Al
After forming the alloy film, patterning is performed using a phosphoric acid, nitric acid and acetic acid-based etchant to form the gate wiring 2 and the gate electrode 3. Subsequently, after successively forming SiN, i-layer a-Si, and n-layer a-Si to be the gate insulating film 4 by the CVD method, the i-layer a-
The Si and the n-layer a-Si are patterned to form a semiconductor layer 5 and a contact layer 6 above the gate electrode 3. Subsequently, after Cr and Al are continuously formed, the source electrode 8 and the drain electrode 9 are formed on the source wiring 7 and the contact layer 6 by patterning. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Subsequently, an insulating film 13 is formed by forming a SiN film by the CVD method. (FIG. 21
-A and Fig. 22-a).

Next, as shown in FIGS. 21-b and 22-b, a resin is applied, a contact hole 11 is formed on the drain electrode 9 by using a photoengraving method, and then fired to form an interlayer insulating film 10. To form Next, FIG. 21-c and FIG.
As shown in -c, after forming ITO as a transparent conductive film by a sputtering method, patterning is performed by a dry etching method to form a pixel electrode 12. Next, FIG.
As shown in FIG. 22D and FIG. 22D, the ITO film and the insulating film 13 constituting the pixel electrode 12 on the drain electrode 9 are etched using a dry etching method to form a contact hole 14 in the insulating film 13. Next, as shown in FIGS. 21-e and 22-e, a Cr film is formed by a sputtering method and then patterned to form a metal film 17 on the inner walls of the contact holes 11 and 14. Thus, the drain electrode 9 and the pixel electrode 12 are electrically connected by the metal film 17 formed on the inner walls of the contact holes 11 and 14. FIG. 25A shows a flowchart of forming a contact portion between the drain electrode 9 and the pixel electrode 12 by the above-described process. Through the above steps, an array substrate of the liquid crystal display device is formed.

It should be noted that the insulating film 13 is
In the case where the contact hole 14 can be selectively etched, the insulating film 13 on the drain electrode 9 may be simultaneously etched to form the contact hole 14 when the pixel electrode 12 is formed. FIG.
FIG. 3C shows a flow chart of forming a contact portion between the drain electrode 9 and the pixel electrode 12 by the above process. The material forming the gate wiring 2 and the gate electrode 3 is Cr, M
Any of o, Ta and Cu may be used. Further, the material forming the source wiring 7 and the source electrode 8 and the drain electrode 9 may be a high melting point metal such as Mo or W as a lower layer film and Ta or Cu instead of Al as an upper layer film. Also,
The metal film 17 for electrically connecting the drain electrode 9 and the pixel electrode 12 may be formed using any metal of Mo, W, and Ta instead of Cr.

FIGS. 23 and 24 show another process of manufacturing the array substrate of the liquid crystal display device according to the seventh embodiment. As in the first embodiment, after forming an Al alloy film on the transparent insulating substrate 1 by a sputtering method, patterning is performed using a phosphoric acid, nitric acid and acetic acid-based etchant to form a gate wiring 2 and a gate electrode 3. . Then, SiN which becomes the gate insulating film 4 by the CVD method, i-layer a-Si, n
After the layer a-Si is continuously formed, the i-layer a-Si and the n-layer a-Si are patterned using a dry etching method, and the semiconductor layer 5 and the contact layer 6 are formed above the gate electrode 3. Form. Subsequently, after Cr and Al are continuously formed, the source electrode 8 and the drain electrode 9 are formed on the source wiring 7 and the contact layer 6 by patterning. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Subsequently, an insulating film 13 is formed by forming a SiN film by the CVD method. Subsequently, a resin is applied and fired to form an interlayer insulating film 1.
0 is formed. (FIGS. 23-a and 24-a).

Next, as shown in FIG. 23-b and FIG. 24-b, ITO is formed as a transparent conductive film by a sputtering method, and then patterned by a dry etching method to form a pixel electrode 12. Next, as shown in FIGS. 23C and 24C, the ITO film, the interlayer insulating film 10 and the insulating film 13 constituting the pixel electrode 12 on the drain electrode 9 are etched using a dry etching method. Contact holes 11 and 14 are formed in insulating film 10 and insulating film 13. Next, FIG. 23-d and FIG.
As shown by d, a Cr film is formed by a sputtering method and then patterned to form a metal film 17 on the inner walls of the contact holes 11 and 14. Thus, the drain electrode 9 and the pixel electrode 12 are connected to the contact holes 11 and 14.
Are electrically connected to each other by a metal film 17 formed on the inner wall. FIG. 25B shows a flowchart of forming a contact portion between the drain electrode 9 and the pixel electrode 12 by the above-described process. Through the above steps, an array substrate of a liquid crystal display device may be formed. According to the present embodiment, effects similar to those of the sixth embodiment can be obtained.

Embodiment 8 FIG. 26 and 27 are a plan view and a cross-sectional view showing a step of manufacturing a source wiring terminal portion on an array substrate of a liquid crystal display device according to Embodiment 8 of the present invention. In the figure, 19 is a source wiring terminal, 20
Is a source wiring terminal formed of the material of the source wiring 7 formed in the source wiring terminal 19, 21 is an opening of the interlayer insulating film 10 provided in the source wiring terminal 19, and 22 is an ITO film forming a pixel electrode. 1 and 2 are denoted by the same reference numerals and description thereof is omitted.

Next, a method of manufacturing the source wiring terminal on the array substrate of the liquid crystal display according to the present embodiment will be described. In the source wiring terminal portion 19, the gate insulating film 4, the semiconductor layer 5, and the contact layer 6 are formed on the transparent insulating substrate 1 by the same method as in the first embodiment. Next, as shown in FIGS. 26-a and 27-a, Cr as the lowermost film, Al as the intermediate film, and Ir as the uppermost film.
Are successively formed, and the three-layer film is simultaneously patterned by using a dry etching method, and the source wiring terminal 20 is formed simultaneously with the formation of the source wiring 7. Next, as shown in FIG. 26-b and FIG. 27-b, a resin is applied, an opening 21 is formed on the source wiring terminal 20 using a photoengraving method, and then baked to form the interlayer insulating film 10. I do. Next, FIG.
As shown in FIG. 27C and FIG. 27C, the ITO film 22 constituting the pixel electrode is formed by the sputtering method. Next, as shown in FIGS. 26D and 27D, a resist is formed, and the ITO film 22 is patterned using a dry etching method to remove the ITO film 22 of the source wiring terminal portion 19. Through the above steps, the source wiring terminal portion 19 whose surface layer is made of the material of the source wiring 7 is formed.
It should be noted that the source wiring terminal portion 19 is provided in the first, second, and third embodiments.
The source wiring 7 shown in 3, 4, and 5 may be formed using the constituent materials.

FIGS. 28 and 29 show another manufacturing step of the source wiring terminal portion of the liquid crystal display device according to the eighth embodiment. In the source wiring terminal portion 19, the gate insulating film 4, the semiconductor layer 5, and the contact layer 6 are formed on the transparent insulating substrate 1 by the same method as in the first embodiment. Next, as shown in FIGS. 28-a and 29-a, Cr, A
After l is continuously formed, patterning is performed to form the source wiring terminal 20 simultaneously with the formation of the source wiring 7. Subsequently, a resin is applied and baked to form the interlayer insulating film 10. Next, as shown in FIGS. 28-b and 29-b,
An ITO film 22 forming a pixel electrode is formed by a sputtering method. Next, as shown in FIGS. 28-c and 29-c, a resist is formed and the IT is formed by dry etching.
The O film 22 is patterned to remove the ITO film 22 of the source wiring terminal portion 19. Next, FIG. 28-d and FIG.
9D, the interlayer insulating film 10 is patterned to form an opening 21 on the source wiring terminal 20. Through the above steps, the source wiring terminal portion 19 whose surface layer is made of the material of the source wiring 7 is formed. Note that the source wiring terminal portion 19 is connected to the source wiring 7 shown in the sixth embodiment.
May be formed by using the constituent material described above.

FIG. 30 shows that an SiN film is formed under the interlayer insulating film.
FIG. 4 is a flowchart of forming a source wiring terminal portion in which a surface layer is formed of a source wiring material when an insulating film made of, for example, is formed. FIG. 30A shows that after forming a source wiring and a source wiring terminal, an insulating film is formed and patterned to form an opening in the insulating film over the source wiring terminal, and then an interlayer insulating film having an opening is formed. Next, a case will be described in which an ITO film forming a pixel electrode is formed and then patterned to remove the ITO film in the source wiring terminal portion to form a source wiring terminal portion. FIG. 30B shows that after forming a source wiring and a source wiring terminal, an insulating film is formed and patterned to form an opening in the insulating film over the source wiring terminal, and then an interlayer insulating film is formed. A case where an ITO film forming a pixel electrode is formed, patterned to remove the ITO film of the source wiring terminal portion, and then an opening is formed in the interlayer insulating film to form a source wiring terminal portion is shown. FIG. 30C shows that after forming a source wiring and a source wiring terminal, an insulating film and an interlayer insulating film are continuously formed, and then an ITO film forming a pixel electrode is formed and then patterned to form a source wiring terminal portion. ITO
A case where a film is removed, an opening is formed in an insulating film and an interlayer insulating film at the same time, and a source wiring terminal portion is formed is shown.

According to the present embodiment, the source wiring terminal 20 constituting the source wiring terminal portion 19 is formed of a conductive metal oxide film, or a transparent conductive film (ITO) constituting a pixel electrode. By adopting a manufacturing process in which the source wiring terminal is not exposed on the surface when the film is formed, a good contact can be obtained in extracting the terminal.

Embodiment 9 FIG. 31 and 32 are a plan view and a cross-sectional view showing a step of manufacturing a source wiring terminal portion on an array substrate of a liquid crystal display device according to Embodiment 9 of the present invention. In the figure, reference numeral 23 denotes a contact hole provided in the interlayer insulating film 10 on the source wiring terminal 20, and reference numeral 24 denotes a terminal made of an ITO film constituting a surface layer of the source wiring terminal portion 19. 26 and 27 are denoted by the same reference numerals, and description thereof is omitted.

Next, a method of manufacturing the source wiring terminal portion on the array substrate of the liquid crystal display according to the present embodiment will be described. The source wiring terminal 19 is formed on the transparent insulating substrate 1 by the same method as in the first embodiment.
A semiconductor layer 5 and a contact layer 6 are formed. next,
As shown in FIGS. 31-a and 32-a, after successively depositing Cr as the lowermost layer film, Al as the intermediate layer film, and Ir as the uppermost layer film, a three-layered film is simultaneously formed using a dry etching method. By patterning, the source wiring terminal 20 is formed simultaneously with the formation of the source wiring 7. Next, as shown in FIG. 31-b and FIG. 32-b, a resin is applied, a contact hole 23 is formed on the source wiring terminal 20 using a photoengraving method, and then baked to form the interlayer insulating film 10. I do. Next, as shown in FIGS. 31C and 32C, an ITO film 22 forming a pixel electrode is formed by a sputtering method. Next, as shown in FIG. 31-d and FIG. 32-d, a resist is formed and the ITO film 22 is patterned using a dry etching method, so that the terminal 24 of the ITO film as a surface layer of the source wiring terminal portion 19 is formed. Form. At this time, the terminal 24 of the ITO film and the source wiring terminal 20 are electrically connected via the contact hole 23. Through the above steps, the source wiring terminal portion 19 whose surface layer is formed by the ITO film 22 forming the pixel electrode is formed.

FIG. 33 shows that an SiN film is formed under the interlayer insulating film.
FIG. 4 is a flowchart of forming a source wiring terminal portion in which a surface layer is formed of an ITO film when an insulating film made of, for example, is formed. FIG. 33A shows that after forming a source wiring and a source wiring terminal, an insulating film is formed and patterned to form a contact hole of the insulating film on the source wiring terminal, and then an interlayer insulating film having a contact hole is formed. Next, a case where an ITO film forming a pixel electrode is formed and patterned to form an ITO film on the surface layer of the source wiring terminal portion will be described. FIG. 30B shows that after forming a source wiring and a source wiring terminal, an interlayer insulating film is formed, and then an ITO film forming a pixel electrode is formed and then patterned to contact the insulating film, the interlayer insulating film and the ITO film. A case in which a hole is formed and then a metal layer is formed in the contact hole, or a conductive resin is filled in the contact hole to electrically connect the ITO film forming the source wiring terminal portion and the source wiring terminal is shown.

FIG. 30C shows that after forming the source wiring and the source wiring terminal, an insulating film is formed and patterned to form a contact hole of the insulating film on the source wiring terminal, and then an interlayer insulating film is formed. And then the ITO constituting the pixel electrode
After forming the film, it is patterned to form an interlayer insulating film and ITO
When a contact hole is formed in the film, and then a metal layer is formed in the contact hole, or the contact hole is filled with a conductive resin to electrically connect the ITO film forming the source wiring terminal portion and the source wiring terminal. Is shown. FIG.
-D, after forming a source wiring and a source wiring terminal, continuously form an insulating film and an interlayer insulating film, then form an ITO film forming a pixel electrode, and then pattern the insulating film;
A contact hole is formed in the interlayer insulating film and the ITO film, and then a metal layer is formed in the contact hole, or the contact hole is filled with a conductive resin, and the ITO film and the source wiring terminal forming the source wiring terminal are electrically connected. The case where the connection is made is shown.

According to the present embodiment, the same effect as that of the eighth embodiment can be obtained even when the ITO film forming the pixel electrode is employed for the surface layer of the source wiring terminal portion 19.

Embodiment 10 FIG. 34 and 35 are a plan view and a sectional view showing a step of manufacturing a gate wiring terminal portion on an array substrate of a liquid crystal display device according to Embodiment 10 of the present invention. In the figure, 25 is a gate wiring terminal,
Reference numeral 26 denotes a gate wiring 2 formed on the gate wiring terminal 25.
A gate wiring terminal made of a material, 27 is a gate wiring terminal 2
5 is an opening of the interlayer insulating film 10 provided in In addition,
1 and 2 are denoted by the same reference numerals and description thereof is omitted.

Next, a method of manufacturing the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the present embodiment will be described. By the same method as in the first embodiment, the gate wiring terminal 26 is formed on the transparent insulating substrate 1 simultaneously with the formation of the gate wiring 2 made of Ir. Subsequently, the gate insulating film 4,
After forming the semiconductor layer 5 and the contact layer 6, the semiconductor layer 5 and the contact layer 6 of the gate wiring terminal portion 25 are removed by a dry etching method. Subsequently, after forming Ir or the like as a source electrode and a drain electrode (not shown), the Ir film of the gate wiring terminal portion 25 is removed in an etching step. Through the above steps, in the gate wiring terminal section 25, only the gate insulating film 4 is formed on the gate wiring terminal 26 as shown in FIGS. 34-a and 35-a. Next, as shown in FIGS. 34-b and 35-b, a resin is applied, an opening 27 is formed on the gate wiring terminal 26 by using a photoengraving method, and then fired to form an interlayer insulating film 10.
To form Next, as shown in FIGS. 34-c and 35-c, the gate insulating film 4 on the gate wiring terminal 26 is removed by etching using the interlayer insulating film 10 as a mask. next,
As shown in FIGS. 34-d and 35-d, an ITO film 22 forming a pixel electrode is formed. Next, as shown in FIGS. 34-e and 35-e, the ITO film 22 of the gate wiring terminal portion 25 is removed by dry etching.
Through the above steps, the gate wiring terminal portion 25 whose surface layer is made of the gate wiring 2 material is formed.

The etching of the gate insulating film 4 is performed by
It may be performed after the etching of the TO film 22. Further, a step of forming an insulating film made of SiN below the interlayer insulating film 10 and removing SiN on the gate wiring terminal 26 at the time of patterning the interlayer insulating film or after forming the SiN may be included.

According to the present embodiment, since the gate wiring terminal 26 constituting the gate wiring terminal portion 25 is formed of a metal having an oxide film having conductivity, a good contact can be obtained in terminal extraction.

Embodiment 11 FIG. 36 and 37 are a plan view and a cross-sectional view showing a step of manufacturing a gate wiring terminal portion on an array substrate of a liquid crystal display device according to Embodiment 11 of the present invention. In the figure, 28 is a gate wiring terminal 2
An opening 29 of the gate insulating film 4 provided in 5 is a terminal made of an ITO film constituting a surface layer of the gate wiring terminal 25. 34 and 35 are denoted by the same reference numerals and description thereof is omitted.

Next, a method of manufacturing the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the present embodiment will be described. As in the tenth embodiment, the gate wiring terminal 26 is formed on the transparent insulating substrate 1 simultaneously with the formation of the gate wiring 2 made of Ir. Subsequently, after forming the gate insulating film 4, the semiconductor layer 5, and the contact layer 6, the semiconductor layer 5 and the contact layer 6 of the gate wiring terminal portion 25 are removed by a dry etching method. Subsequently, after forming Ir or the like as a source electrode and a drain electrode (not shown), the Ir film of the gate wiring terminal portion 25 is removed in an etching step. Next, as shown in FIGS. 36-a and 37-a,
The gate insulating film 4 on the gate wiring terminal 26 is etched to form an opening 28. Next, FIGS. 36-b and 37-
As shown in FIG. 2B, a resin is applied, an opening 27 is formed on the gate wiring terminal 26 by using a photoengraving method, and then the interlayer insulating film 10 is formed by firing. Next, FIGS. 36-c and 37
As shown in FIG. 3C, after forming an ITO film forming a pixel electrode, the gate wiring terminal portion 2 was formed by dry etching.
5, a terminal 29 made of an ITO film is formed. Through the above steps, the gate wiring terminal portion 25 whose surface layer is formed of the ITO film is formed.

The opening 28 of the gate insulating film 4 may be formed after the formation of the interlayer insulating film 10. Further, a step of forming an insulating film made of SiN below the interlayer insulating film 10 and forming an opening at the time of patterning the interlayer insulating film or after forming the SiN may be included. Further, the I.sub.I formed in the opening 27 of the interlayer insulating film 10 of the gate wiring terminal 25 is formed.
The TO film may be removed at the time of etching, and the electrical connection between the gate wiring terminal 26 and the ITO film formed on the interlayer insulating film 10 may be made with another metal or conductive resin.

According to the present embodiment, the same effects as those of the tenth embodiment can be obtained even when the ITO film forming the pixel electrode is used for the surface layer of the gate wiring terminal portion 25.

Embodiment 12 FIG. 38 and 39 are a plan view and a cross-sectional view showing a step of manufacturing a gate wiring terminal portion on an array substrate of a liquid crystal display according to Embodiment 12 of the present invention. In the figure, reference numeral 30 denotes a gate wiring terminal 2
5 contact holes provided in the interlayer insulating film 10;
Reference numeral 1 denotes a terminal formed of the source electrode and drain electrode constituent materials formed on the gate wiring terminal portion 25. Note that FIG.
6 and FIG. 37 are denoted by the same reference numerals and description thereof is omitted.

Next, a method of manufacturing the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the present embodiment will be described. By the same method as in the first embodiment, the gate wiring terminal 26 is formed on the transparent insulating substrate 1 simultaneously with the formation of the gate wiring 2 made of Al. Subsequently, the gate insulating film 4,
After forming the semiconductor layer 5 and the contact layer 6, the semiconductor layer 5 and the contact layer 6 of the gate wiring terminal portion 25 are removed by a dry etching method. Subsequently, an opening 28 is formed in the gate insulating film 4 on the gate wiring terminal 26 (FIG. 3).
8-a and FIG. 39-a). Next, as shown in FIG. 38-b and FIG. 39-b, after a film of Ir / Al / Cr is formed as a source electrode and a drain electrode (not shown), the source electrode and the gate electrode terminal portion 25 are formed by etching. A terminal 31 made of a drain electrode constituent material is formed. Next, as shown in FIGS. 38-c and 38-c,
A resin is applied, and the gate wiring terminal 2 is formed by photolithography.
After forming a contact hole 30 in 5, baking is performed to form an interlayer insulating film 10. Next, as shown in FIGS. 38-d and 39-d, after forming an ITO film forming a pixel electrode, the gate wiring terminal portion 25 is formed on the gate wiring terminal portion 25 by dry etching.
A terminal 29 made of a TO film is formed. Through the above steps,
Gate wiring terminal 2 whose surface layer is formed of an ITO film
5 are formed.

Note that a step of forming an insulating film made of SiN below the interlayer insulating film 10 and forming a contact hole at the time of patterning the interlayer insulating film or after forming the SiN may be included. Further, the ITO film formed in the contact hole 30 of the interlayer insulating film 10 in the gate wiring terminal portion 25 was removed at the time of etching, and was formed on the gate wiring terminal 26 and the interlayer insulating film 10 with another metal or a conductive resin. The electrical connection of the ITO film may be made.

According to the present embodiment, the gate wiring terminal 2
In the case where Al is formed using Al, a terminal is formed on the gate wiring terminal 26 using a metal having an oxide film constituting a source electrode and a drain electrode having conductivity,
Next, by using an ITO film constituting a pixel electrode as a surface layer of the gate wiring terminal portion 25, a good contact can be obtained in terminal extraction.

[0067]

As described above, according to the present invention, the drain electrode is formed of a metal whose oxide film has conductivity, or the drain electrode is formed at the time of forming the transparent conductive film (ITO) constituting the pixel electrode. By adopting a manufacturing process in which is not exposed to the surface, the contact resistance between the drain electrode and the pixel electrode is not increased, and the occurrence of pixel defects due to poor contact can be prevented. Also, for the drain electrode,
It is not necessary to provide a region having a different layer structure for forming a contact portion with the pixel electrode, and the source electrode and the drain electrode can be formed in one patterning step.
Since the productivity is improved and the area of the drain electrode including the contact portion can be reduced, the size of the drain electrode can be reduced, and the aperture ratio can be improved. Also, a conductive resin is filled into a contact portion between the drain electrode and the pixel electrode,
By performing the planarization, poor orientation can be reduced. Further, since an ITO film is not used as a lower layer of the source electrode and the drain electrode, an adverse effect on the gate wiring due to an etchant for the ITO film can be prevented. In addition, in order to etch the ITO film in a layer apart from the layer where the gate wiring is formed, a wet etching method can be used in addition to the dry etching method, so that the degree of freedom of the manufacturing process is increased. Also, in the source wiring terminal portion and the gate wiring terminal portion, by adopting the same layer configuration or the same manufacturing process as that of the drain electrode, a good contact can be obtained in terminal extraction.

[Brief description of the drawings]

FIG. 1 is a plan view showing a step of manufacturing an array substrate of a liquid crystal display device according to Embodiment 1 of the present invention.

FIG. 2 is a cross-sectional view showing a step of manufacturing an array substrate of the liquid crystal display device according to Embodiment 1 of the present invention.

FIG. 3 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 5 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the first embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 7 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 8 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 9 is a plan view showing a step of manufacturing an array substrate of the liquid crystal display device according to the second embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the second embodiment of the present invention.

FIG. 11 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the third embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the third embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the fourth embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the fourth embodiment of the present invention.

FIG. 15 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the fifth embodiment of the present invention.

FIG. 16 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the fifth embodiment of the present invention.

FIG. 17 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the sixth embodiment of the present invention.

FIG. 18 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the sixth embodiment of the present invention.

FIG. 19 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the sixth embodiment of the present invention.

FIG. 20 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the sixth embodiment of the present invention.

FIG. 21 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the seventh embodiment of the present invention.

FIG. 22 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the seventh embodiment of the present invention.

FIG. 23 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the seventh embodiment of the present invention.

FIG. 24 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the seventh embodiment of the present invention.

FIG. 25 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to the seventh embodiment of the present invention.

FIG. 26 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the eighth embodiment of the present invention.

FIG. 27 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the eighth embodiment of the present invention.

FIG. 28 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the eighth embodiment of the present invention.

FIG. 29 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the eighth embodiment of the present invention.

FIG. 30 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to the eighth embodiment of the present invention.

FIG. 31 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the ninth embodiment of the present invention.

FIG. 32 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display device according to Embodiment 9 of the present invention.

FIG. 33 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to Embodiment 9 of the present invention.

FIG. 34 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the tenth embodiment of the present invention.

FIG. 35 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the tenth embodiment of the present invention.

FIG. 36 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the eleventh embodiment of the present invention.

FIG. 37 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the eleventh embodiment of the present invention.

FIG. 38 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the twelfth embodiment of the present invention.

FIG. 39 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the twelfth embodiment of the present invention.

FIG. 40 is a plan view showing a manufacturing process of an array substrate of this type of conventional liquid crystal display device.

FIG. 41 is a cross-sectional view showing a step of manufacturing an array substrate of a conventional liquid crystal display device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Transparent insulating substrate, 2 gate wiring, 3 gate electrodes, 4 gate insulating films, 5 semiconductor layers (i-layer a-S
i), 6 contact layers (n-layer a-Si), 7 source wirings, 8 source electrodes, 9 drain electrodes, 10 interlayer insulating films, 11 contact holes, 12 pixel electrodes, 1
7 metal film, 18 conductive resin, 19 source wiring terminal, 20 source wiring terminal, 21 opening, 22 IT
O film, 23 contact holes, 24 ITO film terminals, 25 gate wiring terminal portions, 26 gate wiring terminals, 27 openings, 28 openings, 29 ITO film terminals, 30 contact holes, 31 terminals.

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[Procedure amendment]

[Submission date] June 3, 1997

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Brief description of drawings

[Correction method] Change

[Correction contents]

[Brief description of the drawings]

FIG. 1 is a plan view showing a step of manufacturing an array substrate of a liquid crystal display device according to Embodiment 1 of the present invention.

FIG. 2 is a cross-sectional view showing a step of manufacturing an array substrate of the liquid crystal display device according to Embodiment 1 of the present invention.

FIG. 3 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 5 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the first embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 7 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 8 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to the first embodiment of the present invention.

9 is a plan view showing a manufacturing process of the array substrate of a liquid crystal display device according to a second embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the second embodiment of the present invention.

FIG. 11 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the third embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the third embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the fourth embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the fourth embodiment of the present invention.

FIG. 15 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the fifth embodiment of the present invention.

FIG. 16 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the fifth embodiment of the present invention.

FIG. 17 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the sixth embodiment of the present invention.

FIG. 18 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the sixth embodiment of the present invention.

FIG. 19 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the sixth embodiment of the present invention.

FIG. 20 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the sixth embodiment of the present invention.

FIG. 21 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the seventh embodiment of the present invention.

FIG. 22 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the seventh embodiment of the present invention.

FIG. 23 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the seventh embodiment of the present invention.

FIG. 24 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the seventh embodiment of the present invention.

FIG. 25 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to the seventh embodiment of the present invention.

FIG. 26 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the eighth embodiment of the present invention.

FIG. 27 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the eighth embodiment of the present invention.

FIG. 28 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the eighth embodiment of the present invention.

FIG. 29 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the eighth embodiment of the present invention.

FIG. 30 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to the eighth embodiment of the present invention.

FIG. 31 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the ninth embodiment of the present invention.

FIG. 32 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display device according to Embodiment 9 of the present invention.

FIG. 33 is a flowchart showing a part of the manufacturing process of the liquid crystal display device according to Embodiment 9 of the present invention.

FIG. 34 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the tenth embodiment of the present invention.

FIG. 35 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the tenth embodiment of the present invention.

FIG. 36 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display device according to the eleventh embodiment of the present invention.

FIG. 37 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the eleventh embodiment of the present invention.

FIG. 38 is a plan view showing a step of manufacturing the array substrate of the liquid crystal display according to the twelfth embodiment of the present invention.

FIG. 39 is a cross-sectional view showing a step of manufacturing the array substrate of the liquid crystal display according to the twelfth embodiment of the present invention.

FIG. 40 is a plan view showing a manufacturing process of an array substrate of this type of conventional liquid crystal display device.

FIG. 41 is a cross-sectional view showing a step of manufacturing an array substrate of a conventional liquid crystal display device.

[Description of Symbols] 1 transparent insulating substrate, 2 gate wiring, 3 gate electrode, 4 gate insulating film, 5 semiconductor layer (i-layer a-S)
i), 6 contact layers (n-layer a-Si), 7 source wirings, 8 source electrodes, 9 drain electrodes, 10 interlayer insulating films, 11 contact holes, 12 pixel electrodes, 1
7 metal film, 18 conductive resin, 19 source wiring terminal, 20 source wiring terminal, 21 opening, 22 IT
O film, 23 contact holes, 24 ITO film terminals, 25 gate wiring terminal portions, 26 gate wiring terminals, 27 openings, 28 openings, 29 ITO film terminals, 30 contact holes, 31 terminals.

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Kazuki Inoue 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation

Claims (16)

[Claims] 1. A transparent insulating substrate, a control electrode and a control electrode wiring, a semiconductor layer, an insulating film formed between the control electrode and the control electrode wiring and the semiconductor layer, and an oxide film having conductivity. A first electrode, a first electrode wiring and a second electrode, which are formed of a metal having a semiconductor element together with the semiconductor layer, on the first electrode, the first electrode wiring and the second electrode; The formed interlayer insulating film, the control electrode, the control electrode wiring and the first electrode, the first electrode wiring, formed in a layer above the second electrode, via a contact hole provided in the interlayer insulating film A first substrate having a pixel electrode made of a transparent conductive film electrically connected to the second electrode, and a second substrate sandwiching a liquid crystal material with the first substrate. Liquid crystal display. 2. A transparent insulating substrate, a control electrode and a control electrode wiring, a semiconductor layer, an insulating film formed between the control electrode and the control electrode wiring and the semiconductor layer, and an oxide film having conductivity. A surface layer is formed of a metal having a first electrode, a first electrode wiring and a second electrode that constitute a semiconductor element together with the semiconductor layer, and the first electrode, the first electrode wiring and the second electrode. An interlayer insulating film formed on the electrode, the control electrode, the control electrode wiring and the first electrode, the first electrode wiring, formed above the second electrode,
A first substrate having a pixel electrode made of a transparent conductive film electrically connected to the second electrode via a contact hole provided in the interlayer insulating film; and a liquid crystal material sandwiched between the first substrate and the first substrate. A liquid crystal display device comprising a second substrate. 3. The metal having a conductive property in an oxide film forming the first electrode, the first electrode wiring, and the second electrode is I
The liquid crystal display device according to claim 1, wherein the liquid crystal display device is any one of r, Nb, Os, Re, Rh, and Ru. 4. A transparent insulating substrate, a control electrode and a control electrode wiring, a semiconductor layer, an insulating film formed between the control electrode and the control electrode wiring and the semiconductor layer, and a surface layer formed of a conductive oxide. A first electrode, a first electrode wiring and a second electrode which constitute a semiconductor element together with the semiconductor layer, having a multilayer structure which is a film, and the first electrode, the first electrode wiring and the second electrode An interlayer insulating film formed on the electrode, a contact formed on the control electrode, the control electrode wiring and the first electrode, the first electrode wiring, the second electrode, and provided on the interlayer insulating film; A first substrate having a pixel electrode made of a transparent conductive film electrically connected to the second electrode via a hole, comprising a second substrate sandwiching a liquid crystal material together with the first substrate; Characteristic liquid crystal display device. 5. The conductive oxide film forming the first electrode, the first electrode wiring, and the second electrode includes IrO ₂ , NbO,
OsO ₂ , ReO ₂ , ReO ₃ , RhO ₂ , RuO ₂ ,
MoO _2, Ti ₄ O _7, a liquid crystal display device according to claim 4, characterized in that the metal film according to any of the VO ₂ and CrO _2. 6. A transparent insulating substrate, a control electrode and a control electrode wiring, a semiconductor layer, an insulating film formed between the control electrode and the control electrode wiring and the semiconductor layer, and a transparent conductive film on a surface layer A first electrode, a first electrode wiring and a second electrode, having a multilayer structure having a reduced metal film of a transparent conductive film below the surface layer, and forming a semiconductor element together with the semiconductor layer; The first electrode, the interlayer insulating film formed on the first electrode wiring and the second electrode, and the control electrode, the control electrode wiring and the first electrode, the first electrode wiring, the second electrode A first substrate having a pixel electrode made of a transparent conductive film formed in an upper layer and electrically connected to the second electrode via a contact hole provided in the interlayer insulating film, together with the first substrate A second substrate for holding the liquid crystal material The liquid crystal display device, characterized in that. 7. The reduced metal film of the transparent conductive film constituting the first electrode, the first electrode wiring, and the second electrode is formed of In, S
7. The liquid crystal display device according to claim 6, wherein the liquid crystal display device is a metal film made of one of n and Zn. 8. A transparent insulating substrate, a control electrode and control electrode wiring, a semiconductor layer, an insulating film formed between the control electrode and control electrode wiring and the semiconductor layer, and a semiconductor element together with the semiconductor layer. A first electrode, a first electrode wiring and a second electrode, and the first electrode, an interlayer insulating film formed on the first electrode wiring and the second electrode, the control electrode, The control electrode wiring and the first electrode, the first electrode wiring, formed in a layer above the second electrode,
A pixel electrode made of a transparent conductive film formed on the interlayer insulating film; and a contact hole provided in the interlayer insulating film after the formation of the pixel electrode, wherein a conductive film is formed on the inner wall or a conductive resin is filled therein. A first substrate having a second substrate sandwiching a liquid crystal material together with the first substrate, and a metal film formed on an inner wall of the contact hole or a conductive resin filled in the contact hole. A liquid crystal display device, wherein a second electrode and a pixel electrode are electrically connected. 9. A step of forming a control electrode and a control electrode wiring on a transparent insulating substrate, a step of forming an insulating film on the control electrode and the control electrode wiring, and a step of interposing the insulating film on the control electrode. Forming a semiconductor layer, and forming a first electrode, a first electrode wiring and a second electrode by forming an oxide film on the semiconductor layer to form a metal having conductivity, and etching the semiconductor layer. Forming an interlayer insulating film on the first electrode, the first electrode wiring, and the second electrode; and forming a contact hole in the interlayer insulating film on the second electrode by photolithography. Forming a transparent conductive film on the interlayer insulating film, etching and forming a pixel electrode electrically connected to the second electrode through the contact hole provided in the interlayer insulating film. Characterized by including the step of forming Of manufacturing a liquid crystal display device. 10. A step of forming a control electrode and a control electrode wiring on a transparent insulating substrate; a step of forming an insulating film on the control electrode and the control electrode wiring; and a step of interposing the insulating film on the control electrode. Forming a semiconductor layer by forming a multilayer film having a metal film having an oxide film as a surface layer on the semiconductor layer, and simultaneously etching the multilayer film to form a first electrode and a first electrode. A step of forming an electrode wiring and a second electrode; a step of forming an interlayer insulating film on the first electrode, the first electrode wiring and the second electrode; and using a photoengraving method for the interlayer insulating film. Forming a transparent conductive film on the interlayer insulating film, etching and electrically connecting to the second electrode through the contact hole provided in the interlayer insulating film. Formed pixel electrode A method for manufacturing a liquid crystal display device, comprising the steps of: 11. A step of forming a control electrode and a control electrode wiring on a transparent insulating substrate, a step of forming an insulating film on the control electrode and the control electrode wiring, and a step of interposing the insulating film on the control electrode. Forming a metal layer on the semiconductor layer, and simultaneously etching to form a first electrode, a first electrode wiring, and a second electrode; A step of forming an interlayer insulating film on the electrode, the first electrode wiring, and the second electrode; a step of forming a transparent conductive film on the interlayer insulating film and etching to form a pixel electrode; Forming a contact hole in the interlayer insulating film and the transparent conductive film on the second electrode, forming a metal film on the inner wall of the contact hole, or filling the contact hole with a conductive resin, Electrodes and Method of manufacturing a liquid crystal display device which comprises a step of electrically connecting the serial pixel electrode. 12. The method according to claim 1, wherein the first electrode has a terminal portion formed by a metal film constituting the first electrode, the first electrode wiring, and the second electrode. The liquid crystal display device according to claim 1. 13. The second electrode and the pixel electrode according to claim 9, wherein the first electrode has a terminal portion formed of a transparent conductive film forming a pixel electrode. 2. The method according to claim 1, wherein the first electrode wiring and the transparent conductive film are electrically connected by the same method as the method for connecting the first electrode wiring and the transparent conductive film.
The liquid crystal display device according to any one of claims 1 to 8. 14. The control electrode has a terminal portion formed by a film having the same configuration as the first electrode and the second electrode according to any one of claims 1 to 7. Any one of claims 1 to 8 or claim 12
14. A liquid crystal display device according to claim 13. 15. The control electrode has a terminal portion formed of a transparent conductive film constituting a pixel electrode, and the control electrode is connected to the second electrode and the pixel electrode according to any one of claims 9 to 11. The control electrode wiring having the same configuration as the first electrode and the second electrode according to any one of claims 1 to 7 and the transparent conductive film are electrically connected by the same method as the connection method. The liquid crystal display device according to any one of claims 1 to 8, wherein the liquid crystal display device is a liquid crystal display device. 16. The control electrode has a terminal portion formed by a transparent conductive film forming a pixel electrode, and a metal film forming a first electrode wiring is formed on the control electrode wiring. The control electrode wiring and the transparent conductive layer via a metal film constituting the first electrode wiring by a method similar to the method for connecting a second electrode and a pixel electrode according to any one of claims 9 to 11. 14. The liquid crystal display device according to claim 1, wherein the films are electrically connected.