JP4606403B2 - Manufacturing method of liquid crystal display device - Google Patents

Description

This invention relates to a method for manufacturing an active matrix liquid crystal display device, particularly a thin film transistor as a switching element (TFT) relates an active matrix method of manufacturing a liquid crystal display equipment of mounting the.

  The display device is usually configured such that a display material such as liquid crystal is sandwiched between two opposing transparent insulating substrates, and a voltage is selectively applied to the display material. At least one of the substrates is an array substrate on which a pixel electrode made of a transparent conductive film, a switching element such as a thin film transistor for applying a predetermined voltage to the pixel electrode, and a signal wiring for giving a signal to the switching element are formed.

40 and 41 are a plan view and a cross-sectional view showing the manufacturing process of the array substrate of the liquid crystal display device in which the pixel electrode is formed in the upper layer on the liquid crystal side than the gate wiring and the source wiring for giving a signal to the thin film transistor.
First, as shown in FIGS. 40A and 41A, the gate wiring 2 having the gate electrode 3 is formed on the transparent insulating substrate 1. Next, as shown in FIGS. 40-b and 41-b, SiN, i-layer a-Si, and n-layer a-Si to be the gate insulating film 4 are continuously formed by CVD, and then dry etching is performed. The i-layer a-Si and the n-layer a-Si are patterned using a method to form a semiconductor layer (i-layer a-Si) 5 and a contact layer (n-layer a-Si) 6 above the gate electrode 3 To do.

  Next, in order to form the source wiring 7 and the drain electrode 9 having the source electrode 8, as shown in FIGS. 40-c and 41-c, ITO (Indium Tin Oxide) is formed and then patterned. Lower layers 8 a and 9 a of the source electrode 8 and the drain electrode 9 are formed on the lower layer 7 a of the source wiring 7 and the contact layer 6. Subsequently, as shown in FIGS. 40D and 41D, after depositing a metal having a small specific resistance, patterning is performed to form the upper layers 7b, 8b, and 9b of the source wiring 7, the source electrode 8, and the drain electrode 9. Form. Here, since the upper layer 9b of the drain electrode 9 is formed only in a predetermined region on the lower layer 9a, and the pattern shapes of the lower layer 9a and the upper layer 9b are not the same, the lower layer of the source wiring 7, the source electrode 8, and the drain electrode 9 The patterning of 7a, 8a, 9a and upper layers 7b, 8b, 9b must be performed separately. Thereafter, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched.

  Next, as shown in FIGS. 40-e and 41-e, an interlayer insulating film is applied, and contact holes 11 are formed on the lower layer 9a made of the ITO film of the drain electrode 9 by using a photoengraving method, followed by firing. Thus, the interlayer insulating layer 10 is formed. Finally, as shown in FIGS. 40-f and 41-f, ITO is formed as a transparent conductive film by sputtering, and then patterned by dry etching to form pixel electrodes 12. At this time, the pixel electrode 12 is electrically connected to the drain electrode 9 through a contact hole 11 formed on the lower layer 9 a of the drain electrode 9.

  The array substrate in which the pixel electrode is formed in the upper layer on the liquid crystal side than the gate wiring and the source wiring for supplying a signal to the thin film transistor is formed by the above process, and the lower layer 7a of the source wiring 7, the source electrode 8 and the drain electrode 9; The patterning of 8a, 9a and the upper layers 7b, 8b, 9b is performed separately by patterning the lower layer 9a and the upper layer 9b of the drain electrode 9 at the same time, and the contact portion with the pixel electrode 12 is made of a metal having a small specific resistance. When the upper layer 9b of the drain electrode 9 is formed, the upper layer 9b is exposed to an oxygen atmosphere when forming the transparent conductive film constituting the pixel electrode 12, and an insulating oxide film is formed on the surface of the upper layer 9b. Since the contact resistance between the electrode 9 and the pixel electrode 12 is increased, the contact hole 11 serving as a contact portion with the pixel electrode 12 is formed. The region on the drain electrode 9 made, without forming the upper layer 9b, in order to form only the lower layer 9a having an oxide film made of a metal having conductivity. As a result, there is a problem that the patterning process of the source wiring 7, the source electrode 8, and the drain electrode 9 is required twice, the manufacturing process is increased, and the productivity is lowered.

The present invention has been made to solve the above-described problems, and without increasing the contact resistance between the second electrode and the pixel electrode, the first wiring, the first electrode, and the second electrode can be connected once. It is an object of the present invention to provide a method for manufacturing a liquid crystal display device that can be formed by a putter process.

A method of manufacturing a liquid crystal display device according to a first aspect of the present invention includes a step of forming a control electrode and a control electrode wiring on a transparent insulating substrate, a step of forming an insulating film on the control electrode and the control electrode wiring, Forming a semiconductor layer on the control electrode via an insulating film; forming a metal film on the semiconductor layer; and simultaneously etching to form a first electrode, a first electrode wiring, and a second electrode A step of forming an interlayer insulating film on the first electrode, the first electrode wiring, and the second electrode; and covering the first electrode, the first electrode wiring, and the second electrode with the interlayer insulating film. Forming a transparent conductive film on the interlayer insulating film and etching to form a pixel electrode; and after forming the pixel electrode , contact holes are formed in the interlayer insulating film and the transparent conductive film on the second electrode. to form, through the contact hole A step of Ru to expose the second electrode, after forming the contact hole, forming a metal film in the contact hole's inner wall, or by filling a conductive resin into the contact hole, the second electrode and the pixel electrode electrically It includes a connecting step.

A method for manufacturing a liquid crystal display device according to a second aspect of the present invention includes a step of forming a control electrode and a control electrode wiring on a transparent insulating substrate, and a step of forming a first insulating film on the control electrode and the control electrode wiring. And forming a semiconductor layer on the control electrode via the first insulating film, forming a metal film on the semiconductor layer, and simultaneously etching to form the first electrode, the first electrode wiring, and the second electrode A step of forming an electrode, and a step of forming an interlayer insulating film on the second insulating film after forming a second insulating film covering them on the first electrode, the first electrode wiring, and the second electrode And forming a contact hole in the interlayer insulating film on the second electrode; and after forming the contact hole, the first electrode, the first electrode wiring, and the second electrode are formed by the second insulating film. A transparent conductive film is formed on the interlayer insulating film in the covered state. Etching to form a pixel electrode; after forming the pixel electrode; etching the second insulating film through the contact hole to expose the second electrode; and forming a metal film on the inner wall of the contact hole And a step of electrically connecting the second electrode and the pixel electrode.
According to a third aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device comprising: forming a control electrode and a control electrode wiring on a transparent insulating substrate; and forming a first insulating film on the control electrode and the control electrode wiring. A step of forming a semiconductor layer on the control electrode through the first insulating film, and forming a metal film on the semiconductor layer and simultaneously etching the first electrode, the first electrode wiring, and After forming the second electrode, and forming a second insulating film covering the first electrode, the first electrode wiring, and the second electrode, an interlayer insulating film is formed on the second insulating film. Forming a transparent conductive film on the interlayer insulating film in a state where the first electrode, the first electrode wiring, and the second electrode are covered with the second insulating film and the interlayer insulating film, and etching. Forming the pixel electrode, and after forming the pixel electrode, the second The second insulating film on the electrode, an interlayer insulating film and the transparent conductive film is etched to form a contact hole, thereby exposing the second electrode through the contact hole, after forming the contact holes, a contact hole inner wall Forming a metal film and electrically connecting the second electrode and the pixel electrode.

According to the present invention, by adopting a manufacturing process in which the drain electrode is not exposed on the surface when forming the transparent conductive film (ITO) constituting the pixel electrode, the contact resistance between the drain electrode and the pixel electrode is not increased, Occurrence of pixel defects due to contact failure can be prevented. In addition, it is not necessary to provide the drain electrode with a region having a different layer structure for forming a contact portion with the pixel electrode, and the source electrode and the drain electrode can be formed in one patterning process, so that productivity is improved. In addition, since the area of the drain electrode including the contact portion can be reduced, the drain electrode can be reduced in size and the aperture ratio can be improved.
In addition, by filling the contact portion between the drain electrode and the pixel electrode with a conductive resin to achieve planarization, alignment defects can be reduced.
In addition, since no ITO film is used under the source electrode and the drain electrode, it is possible to prevent an adverse effect on the gate wiring due to the etching solution on the ITO film. In addition, a wet etching method can be used in addition to the dry etching method for etching the ITO film in a layer away from the layer where the gate wiring is formed, which increases the degree of freedom in the manufacturing process.

Reference Example 1
Hereinafter, a liquid crystal display device according to a first embodiment of the present invention will be described with reference to the drawings. 1 and 2 are a plan view and a cross-sectional view showing a manufacturing process of an array substrate of a liquid crystal display device in which a thin film transistor (TFT) is mounted as a switching element according to Reference Example 1 of the present invention.
In the figure, 1 is a transparent insulating substrate, 2 is a gate wiring (control electrode wiring) having a gate electrode (control electrode) 3 formed on the transparent insulating substrate 1, and 4 is on the gate wiring 2 and the gate electrode 3. The formed gate insulating film 5 is a semiconductor layer made of i-layer a-Si formed on the gate electrode 3 through the gate insulating film 4, and 6 is made of n-layer a-Si formed on the semiconductor layer 5. The contact layer, 7 is a source wiring, 8 and 9 are a source electrode (first electrode) and a drain electrode (second electrode) formed on the contact layer 6, and 10 is on the source electrode 8 and the drain electrode 9. The formed interlayer insulating film, 11 is a contact hole formed in the interlayer insulating film on the drain electrode 9, and 12 is a pixel electrode.

Next, a method for manufacturing the array substrate of the liquid crystal display device according to the first reference example will be described.
First, as shown in FIGS. 1A and 2A, an Al alloy film is formed on the transparent insulating substrate 1 by sputtering, and then patterned using phosphoric acid, nitric acid and acetic acid-based etching solution, and gate wiring is formed. 2 and the gate electrode 3 are formed. Next, as shown in FIGS. 1B and 2B, SiN, i-layer a-Si, and n-layer a-Si to be the gate insulating film 4 are successively formed by CVD, and then dry etching is performed. The i-layer a-Si and the n-layer a-Si are patterned using a method to form a semiconductor layer (i-layer a-Si) 5 and a contact layer (n-layer a-Si) 6 above the gate electrode 3 To do.

  Next, as shown in FIGS. 1C and 2C, Ir is deposited by sputtering and then patterned by dry etching, and the source electrode 8 and the drain are formed on the source wiring 7 and the contact layer 6. Electrode 9 is formed. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Next, as shown in FIG. 1-d and FIG. 2-d, a photosensitive resin is applied, a contact hole 11 is formed on the drain electrode 9 using a photoengraving method, and then baked to form an interlayer insulating film. 10 is formed. FIG. 7A shows a flowchart for forming the contact hole 11 in the interlayer insulating film 10 by the above process. Finally, as shown in FIGS. 1-f and 2-f, ITO is deposited as a transparent conductive film by sputtering, and then patterned by dry etching to form pixel electrodes 12. At this time, the pixel electrode 12 is electrically connected to the drain electrode 9 through a contact hole 11 formed on the drain electrode 9. Through the above process, the array substrate of the liquid crystal display device is formed.

The material constituting the gate wiring 2 and the gate electrode 3 may be any of Cr, Mo, Ta, and Cu.
Further, the material constituting the source wiring 7, the source electrode 8, and the drain electrode 9 may be any of Nb, Os, Re, Re, Rh, and Ru.
The material constituting the gate insulating film 4 may be an oxide film such as SiO ₂ , Al ₂ O ₃ , Ta ₂ O ₅ .
The interlayer insulating film 10 having the contact hole 11 may be formed by dry etching using a resin having no photosensitivity. FIG. 7B shows a flowchart for forming the contact hole 11 in the interlayer insulating film 10 by the above process.

  Further, before applying the photosensitive resin constituting the interlayer insulating film 10, as shown in FIGS. 3-a and 4-a, a SiN film is formed by a CVD method, and then a dry etching method is used. Patterning is performed to form an insulating film 13 having a contact hole 14 on the drain electrode 9. Next, as shown in FIGS. 3-b and 4-b, a photosensitive resin is applied, and a photoengraving method is used. Then, after forming the contact hole 11 at the same position as the contact hole 14 on the drain electrode 9, the interlayer insulating film 10 may be formed by baking. FIG. 8A shows a flowchart for forming the contact holes 11 and 14 when the insulating film 13 is formed between the drain electrode 9 and the interlayer insulating film 10 by the above process.

  Alternatively, before applying the photosensitive resin constituting the interlayer insulating film 11, as shown in FIGS. 5-a and 6-a, SiN is formed by CVD to form the insulating film 13, Next, as shown in FIGS. 5B and 6B, a photosensitive resin is applied, and a contact hole 11 is formed above the drain electrode 9 by using a photoengraving method, followed by baking to form an interlayer insulating film. After forming 10, the contact hole 14 may be formed in the insulating film 13 by dry etching using the interlayer insulating film 10 as a mask. FIG. 8B shows a flowchart for forming the contact holes 11 and 14 when the insulating film 13 is formed between the drain electrode 9 and the interlayer insulating film 10 by the above process.

According to Reference Example 1 of the present invention, the drain electrode 9 is formed of a metal whose oxide film has conductivity, so that the drain electrode 9 is oxygenated when the transparent conductive film (ITO) constituting the pixel electrode 12 is formed. Even if an oxide film is formed on the surface by exposure to the atmosphere, the contact resistance between the drain electrode 9 and the pixel electrode 12 is not increased. Therefore, a different layer structure serving as a contact portion with the pixel electrode 12 is formed on the drain electrode 9. The source wiring 7, the source electrode 8, and the drain electrode 9 can be formed in a single patterning step.
Furthermore, since it is not necessary to secure a region having a different layer structure as a contact portion with the pixel electrode 12 on the drain electrode 9, the area of the drain electrode 9 including the contact portion can be reduced.
In addition, since no ITO film is used under the source electrode and the drain electrode, it is possible to prevent an adverse effect on the gate wiring due to the etching solution on the ITO film.

Reference Example 2
In Reference Example 1, the source wiring 7, the source electrode 8 and the drain electrode 9 are composed of a single layer film. However, as shown in FIGS. 9 and 10, the source wiring 7, the source electrode 8 and the drain electrode 9 are arranged at the lowermost layer. High melting point metal film such as Cr, Mo, W, etc. as a film, metal film of any of Al, Ta and Cu as an intermediate layer film, metal of any of Ir, Nb, Os, Re, Rh and Ru as a top layer film The same effect as in Reference Example 1 can be obtained even with a three-layered film structure. Since other configurations are the same as those of the reference example 1, description thereof is omitted.

9 and 10 show a manufacturing process of the array substrate of the liquid crystal display device according to Reference Example 2. FIG. By the same method as in Reference Example 1, a gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on the transparent insulating substrate 1.
Next, as shown in FIGS. 9-a and 10-a, the lowermost layer film is a refractory metal film such as Cr, Mo, W, etc., and the intermediate layer film is a metal film made of any of Al, Ta, and Cu, After continuously forming a metal film of any one of Ir, Nb, Os, Re, Rh, and Ru as an upper layer film, the three-layer film is simultaneously patterned using a dry etching method, and the source wiring 7 and the contact layer 6 A source electrode 8 and a drain electrode 9 are formed thereon. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Next, as shown in FIGS. 9B and 10B, a resin is applied, and contact holes 11 are formed on the drain electrodes 9 using a photoengraving method, followed by baking to form an interlayer insulating film 10. . Finally, as shown in FIGS. 9C and 10C, ITO is formed as a transparent conductive film by sputtering, and then patterned by dry etching to form the pixel electrode 12. At this time, the pixel electrode 12 is electrically connected to the drain electrode 9 through a contact hole 11 formed on the drain electrode 9. Through the above process, the array substrate of the liquid crystal display device is formed.

Reference Example 3.
In Reference Example 1, the source wiring 7, the source electrode 8 and the drain electrode 9 are formed of a single layer film. However, as shown in FIGS. 11 and 12, the source wiring 7, the source electrode 8 and the drain electrode 9 are formed on the lowermost layer. As a film, a refractory metal film such as Cr, Mo, W or the like, as a first intermediate layer film, a metal film of any of Al, Ta and Cu, as a second intermediate layer film, Ir, Nb, Os, Re, Rh and Ru Metal film by any one, and metal oxide film by any one of IrO ₂ , NbO, OsO ₂ , ReO ₂ , ReO ₃ , RhO ₂ , RuO ₂ , MoO ₂ , Ti ₄ O ₇ , VO ₂ and CrO _{2 as} the uppermost layer film The same effect as in Reference Example 1 can be obtained even with a four-layer film structure made of Since other configurations are the same as those of the reference example 1, description thereof is omitted.

11 and 12 show a manufacturing process of the array substrate of the liquid crystal display device according to Reference Example 3. FIG. By the same method as in Reference Example 1, a gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on the transparent insulating substrate 1.
Next, as shown in FIGS. 11-a and 12-a, the lowermost layer film is a refractory metal film such as Cr, Mo, or W, and the first intermediate layer film is a metal film made of any of Al, Ta, and Cu. , A metal film made of any of Ir, Nb, Os, Re, Rh and Ru as the second intermediate layer film, and IrO ₂ , NbO, OsO ₂ , ReO ₂ , ReO ₃ , RhO ₂ , RuO ₂ , MoO as the top layer film ₂ , a metal oxide film made of any one of Ti ₄ O ₇ , VO ₂ and CrO ₂ is continuously formed, and then a four-layer film is simultaneously patterned by using a dry etching method, on the source wiring 7 and the contact layer 6. A source electrode 8 and a drain electrode 9 are formed. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Next, as shown in FIGS. 11B and 12B, a resin is applied, and contact holes 11 are formed on the drain electrodes 9 using a photoengraving method, followed by baking to form an interlayer insulating film 10. . Finally, as shown in FIG. 11C and FIG. 12C, ITO is formed as a transparent conductive film by sputtering, and then patterned by dry etching to form the pixel electrode 12. At this time, the pixel electrode 12 is electrically connected to the drain electrode through a contact hole 11 formed on the drain electrode 9. Through the above process, the array substrate of the liquid crystal display device is formed.

Reference Example 4
In Reference Example 1, the source wiring 7, the source electrode 8 and the drain electrode 9 are composed of a single layer film. However, as shown in FIG. 13, the source wiring 7, the source electrode 8 and the drain electrode 9 are Cr as the lowermost layer film. A refractory metal film such as Mo, W, etc., a metal film made of any of Al, Ta and Cu as an intermediate layer film, and a metal film made of any of Ir, Nb, Os, Re, Rh and Ru as an uppermost layer film The effect similar to that of Reference Example 1 can be obtained by forming a four-layer film structure comprising a metal oxide film whose surface layer is the uppermost layer film after the film is oxidized. Since other configurations are the same as those of the reference example 1, description thereof is omitted.

FIG. 13 shows a manufacturing process of the array substrate of the liquid crystal display device according to Reference Example 4. By the same method as in Reference Example 1, a gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on the transparent insulating substrate 1.
Next, as shown in FIG. 13-a, the lowermost layer film is a refractory metal film such as Cr, Mo, W or the like, the intermediate layer film is a metal film of any of Al, Ta and Cu, the uppermost layer film is Ir, A metal film made of any of Nb, Os, Re, Rh, and Ru is continuously formed to form the three-layer film 15. Next, as shown in FIG. 13B, the substrate on which the three-layer film 15 is formed is heated, for example, in an oxygen atmosphere to oxidize the metal surface layer constituting the uppermost layer film. Next, as shown in FIG. 13C, the dry etching method is used to simultaneously pattern the three-layer film 15 and the metal oxide film that constitutes the uppermost layer film formed by the oxidation treatment, so that the source wiring 7 and the contact are formed. A source electrode 8 and a drain electrode 9 are formed on the layer 6. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Thereafter, an interlayer insulating film 10 having a contact hole 11 and a pixel electrode 12 are formed by the same method as in Reference Example 1, and an array substrate of a liquid crystal display device is formed.

FIG. 14 shows another manufacturing process of the array substrate of the liquid crystal display device according to Reference Example 4. By the same method as in Reference Example 1, a gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on the transparent insulating substrate 1.
Next, as shown in FIG. 14A, the lowermost layer film is a refractory metal film such as Cr, Mo, W or the like, the intermediate layer film is a metal film of any of Al, Ta and Cu, the uppermost layer film is Ir, A metal film made of any of Nb, Os, Re, Rh, and Ru is continuously formed to form the three-layer film 15. Next, as shown in FIG. 14B, the three-layer film 15 is simultaneously patterned by using a dry etching method to form the source electrode 8 and the drain electrode 9 on the source wiring 7 and the contact layer 6. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Next, as shown in FIG. 14C, the substrate on which the three-layer film 15 is formed is heated, for example, in an oxygen atmosphere to oxidize the metal surface layer constituting the uppermost layer film. Thereafter, the interlayer insulating film 10 having the contact hole 11 and the pixel electrode 12 may be formed by the same method as in Reference Example 1 to form the array substrate of the liquid crystal display device. Note that the oxidation treatment of the metal constituting the uppermost layer film may be performed in an oxygen plasma atmosphere.

Reference Example 5
In Reference Example 1, the source wiring 7, the source electrode 8 and the drain electrode 9 are formed of a single layer film. However, as shown in FIGS. 15 and 16, the source wiring 7, the source electrode 8 and the drain electrode 9 are A high melting point metal film such as Cr, Mo, W, etc., a metal film made of any of Al, Ta and Cu as the first intermediate film, a metal film made of any of In, Sn and Zn as the second intermediate film, Even if the upper layer film has a four-layer film structure made of a metal oxide film made of any one of ITO, InO, SnO, and ZnO, the same effect as that of the first embodiment can be obtained, and the pixel electrode 12 can be used as the uppermost layer film of the drain electrode 9. Therefore, the contact resistance between the drain electrode 9 and the pixel electrode 12 can be further reduced. Since other configurations are the same as those of the reference example 1, description thereof is omitted.

15 and 16 show a manufacturing process of the array substrate of the liquid crystal display device according to Reference Example 5. FIG. By the same method as in Reference Example 1, a gate wiring 2 having a gate electrode 3, a gate insulating film 4, a semiconductor layer 5, and a contact layer 6 are formed on the transparent insulating substrate 1.
Next, as shown in FIG. 16-a, the lowermost layer film is a refractory metal film such as Cr, Mo, W or the like, the first intermediate layer film is a metal film made of any of Al, Ta, and Cu, and the second intermediate layer A metal film made of any one of In, Sn, and Zn is formed as a film, and a metal oxide film made of any one of ITO, InO, SnO, and ZnO is successively formed as a top layer film, thereby forming a four-layer film 16. Next, as shown in FIGS. 15B and 16B, the four-layer film 16 is simultaneously patterned by using a dry etching method to form the source electrode 8 and the drain electrode 9 on the source wiring 7 and the contact layer 6. To do. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Next, as shown in FIGS. 15-c and 16-c, a resin is applied, a contact hole 11 is formed on the drain electrode 9 using a photoengraving method, and then baked to form an interlayer insulating film 10. . Finally, as shown in FIGS. 15-d and 16-d, ITO is deposited as a transparent conductive film by sputtering, followed by patterning using dry etching to form pixel electrodes 12. At this time, the pixel electrode 12 is electrically connected through a contact hole 11 formed on the drain electrode 9. Through the above process, the array substrate of the liquid crystal display device is formed.

Embodiment 1 FIG.
17 and 18 are a plan view and a sectional view showing the manufacturing process of the array substrate of the liquid crystal display device according to the first embodiment of the present invention. 19 and 20 are a plan view and a sectional view showing another manufacturing process of the array substrate of the liquid crystal display device according to the first embodiment. 18, 17 is a metal film formed in the contact hole 11 inner wall, 20, 18 is a conductive resin filled in the contact hole 11. 1 and 2 are denoted by the same reference numerals and description thereof is omitted.

Next, a method for manufacturing the array substrate of the liquid crystal display device according to the present embodiment will be described.
As in Reference Example 1, after an Al alloy film is formed on the transparent insulating substrate 1 by sputtering, patterning is performed using phosphoric acid, nitric acid, and acetic acid-based etching solution to form the gate wiring 2 and the gate electrode 3. Subsequently, SiN, i-layer a-Si, and n-layer a-Si to be the gate insulating film 4 are continuously formed by CVD, and then the i-layer a-Si and n-layer a- are formed by dry etching. By patterning Si, the semiconductor layer 5 and the contact layer 6 are formed at a position above the gate electrode 3. Subsequently, Cr and Al are continuously formed, and then patterned to form the source electrode 8 and the drain electrode 9 on the source wiring 7 and the contact layer 6. At the same time, the portion of the n-layer a-Si that is not covered by the source electrode 8 and the drain electrode 9 is etched (FIGS. 17A and 18A).

Next, as shown in FIGS. 17B and 18B, a resin is applied and baked to form the interlayer insulating film 10. Next, as shown in FIGS. 17C and 18C, ITO is formed as a transparent conductive film by sputtering, and then patterned by dry etching to form the pixel electrode 12. Next, as shown in FIGS. 17D and 18D, the pixel electrode 12 and the interlayer insulating film 10 on the drain electrode 9 are etched using a dry etching method to form a contact hole 11, and this contact hole is formed. 11 Ru exposing the drain electrode 9 through. Next, as shown in FIGS. 17E and 18E, a Cr film is formed by sputtering and then patterned to form a metal film 17 on the inner wall of the contact hole 11. Alternatively, as shown in FIGS. 19 and 20, the contact hole 11 is filled with a conductive resin. In this way, the drain electrode 9 and the pixel electrode 12 are electrically connected by the metal film 17 formed on the inner wall of the contact hole 11 or the conductive resin 18 filled in the contact hole 11. Through the above process, the array substrate of the liquid crystal display device is formed.

The material constituting the gate wiring 2 and the gate electrode 3 may be any of Cr, Mo, Ta, and Cu.
The material constituting the source wiring 7, the source electrode 8, and the drain electrode 9 may be refractory metals such as Mo and W as the lower layer film, and Ta or Cu instead of Al as the upper layer film.
The metal film 17 that electrically connects the drain electrode 9 and the pixel electrode 12 may be formed using any one of Mo, W, and Ta instead of Cr.

According to the present embodiment, when the transparent conductive film (ITO) constituting the pixel electrode 12 is formed, the source electrode 8 and the source wiring are formed by the interlayer insulating film 10 in the steps shown in FIGS. 17C and 18C. 7 and the drain electrode 9 are covered, a transparent conductive film ITO is formed and patterned to form the pixel electrode 12, and the drain electrode 9 is not exposed. Since an oxide film serving as an insulator is not formed on the surface and the contact resistance between the drain electrode 9 and the pixel electrode 12 is not increased, the same effect as in Reference Example 1 can be obtained.
Further, by filling the contact portion between the drain electrode and the pixel electrode with the conductive resin 18 and flattening it, alignment defects can be reduced.

Embodiment 2. FIG.
21 and 22 are a plan view and a cross-sectional view showing the manufacturing process of the array substrate of the liquid crystal display device according to the second embodiment of the present invention. In addition, since the code | symbol in a figure is the same as the code | symbol shown in FIG. 1 and FIG. 2, description is abbreviate | omitted.

Next, a method for manufacturing the array substrate of the liquid crystal display device according to the present embodiment will be described.
As in Reference Example 1, after an Al alloy film is formed on the transparent insulating substrate 1 by sputtering, patterning is performed using phosphoric acid, nitric acid, and acetic acid-based etching solution to form the gate wiring 2 and the gate electrode 3. Subsequently, SiN, i-layer a-Si, and n-layer a-Si to be the gate insulating film 4 are continuously formed by CVD, and then the i-layer a-Si and n-layer a- are formed by dry etching. By patterning Si, the semiconductor layer 5 and the contact layer 6 are formed at a position above the gate electrode 3. Subsequently, Cr and Al are continuously formed, and then patterned to form the source electrode 8 and the drain electrode 9 on the source wiring 7 and the contact layer 6. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Subsequently, an SiN film is formed by a CVD method, and an insulating film 13 that covers the source electrode 8, the source wiring 7, and the drain electrode 9 is formed. (FIGS. 21-a and 22-a).

Next, as shown in FIGS. 21-b and 22-b, a resin is applied, a contact hole 11 is formed on the drain electrode 9 using a photoengraving method, and then baked to form an interlayer insulating film 10. . Next, as shown in FIG. 21-c and FIG. 22-c, after forming ITO as a transparent conductive film on the interlayer insulating film 10 by sputtering, patterning is performed using dry etching, and the pixel electrode 12 is formed. Form. Next, as shown in FIGS. 21D and 22D, the ITO film and the insulating film 13 constituting the pixel electrode 12 on the drain electrode 9 are etched using a dry etching method, and the insulating film is formed through the contact hole 11. 13 was the contact hole 14 is formed in the insulating film 13 by etching, Ru to expose the drain electrode 9 through the contact hole 11, 14. Next, as shown in FIGS. 21E and 22E, a Cr film is formed by sputtering and then patterned to form a metal film 17 on the inner walls of the contact holes 11 and 14. In this way, the drain electrode 9 and the pixel electrode 12 are electrically connected by the metal film 17 formed on the inner walls of the contact holes 11 and 14. FIG. 25A shows a flow chart of forming a contact portion between the drain electrode 9 and the pixel electrode 12 by the above process. Through the above process, the array substrate of the liquid crystal display device is formed.

When the insulating film 13 can be selectively etched with respect to the interlayer insulating film 10, the contact hole 14 may be formed by etching the insulating film 13 on the drain electrode 9 simultaneously with the formation of the pixel electrode 12. . FIG. 25-c shows a flowchart for forming a contact portion between the drain electrode 9 and the pixel electrode 12 by the above process.
The material constituting the gate wiring 2 and the gate electrode 3 may be any of Cr, Mo, Ta, and Cu.
The material constituting the source wiring 7, the source electrode 8, and the drain electrode 9 may be refractory metals such as Mo and W as the lower layer film, and Ta or Cu instead of Al as the upper layer film.
The metal film 17 that electrically connects the drain electrode 9 and the pixel electrode 12 may be formed using any one of Mo, W, and Ta instead of Cr.

23 and 24 show another manufacturing process of the array substrate of the liquid crystal display device according to the second embodiment. As in Reference Example 1, after an Al alloy film is formed on the transparent insulating substrate 1 by sputtering, patterning is performed using phosphoric acid, nitric acid, and acetic acid-based etching solution to form the gate wiring 2 and the gate electrode 3. Subsequently, SiN, i-layer a-Si, and n-layer a-Si to be the gate insulating film 4 are continuously formed by CVD, and then the i-layer a-Si and n-layer a- are formed by dry etching. By patterning Si, the semiconductor layer 5 and the contact layer 6 are formed at a position above the gate electrode 3. Subsequently, Cr and Al are continuously formed, and then patterned to form the source electrode 8 and the drain electrode 9 on the source wiring 7 and the contact layer 6. At the same time, the portion of the n-layer a-Si not covered with the source electrode 8 and the drain electrode 9 is etched. Subsequently, an SiN film is formed by a CVD method, and an insulating film 13 that covers the source electrode 8, the source wiring 7, and the drain electrode 9 is formed. Subsequently, a resin is applied and baked to form the interlayer insulating film 10. (FIGS. 23-a and 24-a).

Next, as shown in FIG. 23B and FIG. 24B, after forming ITO as a transparent conductive film on the interlayer insulating film 10 by sputtering, patterning is performed using dry etching, and the pixel electrode 12 is formed. Form. Next, as shown in FIGS. 23-c and 24-c, the ITO film, the interlayer insulating film 10 and the insulating film 13 constituting the pixel electrode 12 on the drain electrode 9 are etched using a dry etching method, and the interlayer insulating film 10 and to form contact holes 11 and 14 in the insulating film 13, Ru expose the drain electrode 9 through the contact hole 11, 14. Next, as shown in FIGS. 23-d and 24-d, a Cr film is formed by sputtering and then patterned to form a metal film 17 on the inner walls of the contact holes 11 and. In this way, the drain electrode 9 and the pixel electrode 12 are electrically connected by the metal film 17 formed on the inner walls of the contact holes 11 and 14. FIG. 25B shows a flowchart for forming a contact portion between the drain electrode 9 and the pixel electrode 12 by the above process. Through the above process, an array substrate of a liquid crystal display device may be formed.
In the steps shown in FIGS. 21-c and 22-c of the present embodiment, a transparent conductive film ITO is formed and patterned with the insulating film 13 covering the source electrode 8, the source wiring 7, and the drain electrode 9. The pixel electrode 12 is formed, and in the process shown in FIGS. 23B and 24B, the source electrode 8, the source wiring 7 and the drain electrode 9 are covered with the insulating film 13 and the interlayer insulating film 10 and transparent. Since the conductive film ITO is formed and patterned to form the pixel electrode 12, the same effect as in the first embodiment can be obtained.

Embodiment 3 FIG.
26 and 27 are a plan view and a sectional view showing a manufacturing process of the source wiring terminal portion on the array substrate of the liquid crystal display device according to the third embodiment of the present invention. In the figure, 19 is a source wiring terminal portion, 20 is a source wiring terminal made of source wiring 7 material formed in the source wiring terminal portion 19, 21 is an opening portion of the interlayer insulating film 10 provided in the source wiring terminal portion 19, 22. Is an ITO film constituting the pixel electrode. 1 and 2 are denoted by the same reference numerals and description thereof is omitted.

Next, a method for manufacturing the source wiring terminal portion on the array substrate of the liquid crystal display device according to the present embodiment will be described.
In the source wiring terminal portion 19, the gate insulating film 4, the semiconductor layer 5, and the contact layer 6 are formed on the transparent insulating substrate 1 by the same method as in Reference Example 1. Next, as shown in FIGS. 26-a and 27-a, Cr is continuously formed as the lowermost layer film, Al is formed as the intermediate layer film, and Ir is formed as the uppermost layer film, and then three layers are formed using a dry etching method. The film is patterned at the same time, and the source wiring terminal 20 is formed simultaneously with the formation of the source wiring 7. Next, as shown in FIGS. 26-b and 27-b, a resin is applied, and an opening 21 is formed on the source wiring terminal 20 using a photoengraving method, followed by baking to form an interlayer insulating film 10. To do. Next, as shown in FIGS. 26-c and 27-c, an ITO film 22 constituting the pixel electrode is formed by sputtering. Next, as shown in FIGS. 26-d and 27-d, a resist is formed and the ITO film 22 is patterned using a dry etching method, and the ITO film 22 of the source wiring terminal portion 19 is removed. Through the above steps, the source wiring terminal portion 19 whose surface layer is made of the source wiring 7 material is formed.
Note that the source wiring terminal portion 19 may be formed using the constituent material of the source wiring 7 shown in Reference Examples 1, 2, 3, 4, and 5.

28 and 29 show another manufacturing process of the source wiring terminal portion of the liquid crystal display device according to the third embodiment.
In the source wiring terminal portion 19, the gate insulating film 4, the semiconductor layer 5, and the contact layer 6 are formed on the transparent insulating substrate 1 by the same method as in Reference Example 1. Next, as shown in FIGS. 28-a and 29-a, Cr and Al are continuously formed, and then patterned to form the source wiring terminal 20 simultaneously with the formation of the source wiring 7. Subsequently, a resin is applied and baked to form the interlayer insulating film 10. Next, as shown in FIGS. 28B and 29B, an ITO film 22 constituting the pixel electrode is formed by sputtering. Next, as shown in FIGS. 28-c and 29-c, a resist is formed and the ITO film 22 is patterned using a dry etching method to remove the ITO film 22 in the source wiring terminal portion 19. Next, as shown in FIGS. 28D and 29D, the interlayer insulating film 10 is patterned to form the opening 21 on the source wiring terminal 20. Through the above steps, the source wiring terminal portion 19 whose surface layer is made of the source wiring 7 material is formed.
Note that the source wiring terminal portion 19 may be formed using the constituent material of the source wiring 7 described in Embodiment 1.

FIG. 30 shows a flow chart of forming a source wiring terminal portion whose surface layer is made of a source wiring material when an insulating film made of SiN or the like is formed below the interlayer insulating film.
30A shows that after forming the source wiring and the source wiring terminal, an insulating film is formed and patterned to form an opening in the insulating film on the source wiring terminal, and then an interlayer insulating film having the opening is formed. Next, the case where the ITO film constituting the pixel electrode is formed and then patterned to remove the ITO film in the source wiring terminal portion to form the source wiring terminal portion is shown.
In FIG. 30-b, after forming the source wiring and the source wiring terminal, an insulating film is formed and patterned to form an opening in the insulating film on the source wiring terminal, and then an interlayer insulating film is formed. A case where an ITO film forming the pixel electrode is formed and then patterned to remove the ITO film in the source wiring terminal portion, and then an opening is formed in the interlayer insulating film to form the source wiring terminal portion is shown.
In FIG. 30C, after forming the source wiring and the source wiring terminal, an insulating film and an interlayer insulating film are continuously formed, and then an ITO film constituting the pixel electrode is formed and then patterned to form a source wiring terminal portion. In this case, the ITO film is removed, and then an opening is simultaneously formed in the insulating film and the interlayer insulating film to form a source wiring terminal portion.

  According to the present embodiment, the source wiring terminal 20 constituting the source wiring terminal portion 19 is formed of a metal whose oxide film has conductivity, or the transparent conductive film (ITO) constituting the pixel electrode is formed. By adopting a manufacturing process that sometimes does not expose the source wiring terminal to the surface, good contact can be obtained in extracting the terminal.

Embodiment 4 FIG.
31 and 32 are a plan view and a cross-sectional view showing a manufacturing process of the source wiring terminal portion on the array substrate of the liquid crystal display device according to the fourth embodiment of the present invention. In the figure, 23 is a contact hole provided in the interlayer insulating film 10 on the source wiring terminal 20, and 24 is a terminal made of an ITO film constituting the surface layer of the source wiring terminal portion 19. The same parts as those in FIG. 26 and FIG.

Next, a method for manufacturing the source wiring terminal portion on the array substrate of the liquid crystal display device according to the present embodiment will be described.
In the source wiring terminal portion 19, the gate insulating film 4, the semiconductor layer 5, and the contact layer 6 are formed on the transparent insulating substrate 1 by the same method as in Reference Example 1. Next, as shown in FIGS. 31-a and 32-a, Cr is continuously formed as the lowermost layer film, Al is formed as the intermediate layer film, and Ir is formed as the uppermost layer film, and then three layers are formed by using a dry etching method. The film is patterned at the same time, and the source wiring terminal 20 is formed simultaneously with the formation of the source wiring 7. Next, as shown in FIGS. 31-b and 32-b, a resin is applied, a contact hole 23 is formed on the source wiring terminal 20 using a photoengraving method, and then baked to form the interlayer insulating film 10. To do. Next, as shown in FIGS. 31-c and 32-c, an ITO film 22 constituting the pixel electrode is formed by sputtering. Next, as shown in FIGS. 31-d and 32-d, a resist is formed and the ITO film 22 is patterned using a dry etching method, so that the terminal 24 made of the ITO film as the surface layer of the source wiring terminal portion 19 is formed. Form. At this time, the terminal 24 made of the ITO film and the source wiring terminal 20 are electrically connected through the contact hole 23. Through the above steps, the source wiring terminal portion 19 whose surface layer is composed of the ITO film 22 constituting the pixel electrode is formed.

FIG. 33 shows a flow chart of forming a source wiring terminal portion in which the surface layer is made of an ITO film when an insulating film made of SiN or the like is formed below the interlayer insulating film.
In FIG. 33A, after forming the source wiring and the source wiring terminal, an insulating film is formed and patterned to form an insulating film contact hole on the source wiring terminal, and then an interlayer insulating film having a contact hole is formed. Next, a case where an ITO film constituting the pixel electrode is formed and patterned to form an ITO film on the surface layer of the source wiring terminal portion is shown.
FIG. 30-b shows that after forming the source wiring and the source wiring terminal, an interlayer insulating film is formed, and then an ITO film constituting the pixel electrode is formed and then patterned to contact the insulating film, the interlayer insulating film, and the ITO film. A case is shown in which a hole is formed and then a metal layer is formed in the contact hole or a conductive resin is filled in the contact hole to electrically connect the ITO film constituting the source wiring terminal portion and the source wiring terminal.

In FIG. 30-c, after forming the source wiring and the source wiring terminal, an insulating film is formed and patterned to form an insulating film contact hole on the source wiring terminal, and then an interlayer insulating film is formed. After forming the ITO film constituting the pixel electrode, patterning is performed to form a contact hole in the interlayer insulating film and the ITO film, and then a metal layer is formed in the contact hole, or a conductive resin is filled in the contact hole. The case where the ITO film constituting the source wiring terminal portion and the source wiring terminal are electrically connected is shown.
In FIG. 30-d, after forming the source wiring and the source wiring terminal, an insulating film and an interlayer insulating film are continuously formed, and then an ITO film constituting the pixel electrode is formed and then patterned to form an insulating film and an interlayer film. A contact hole is formed in the insulating film and the ITO film, and then a metal layer is formed in the contact hole, or a conductive resin is filled in the contact hole to electrically connect the ITO film and the source wiring terminal constituting the source wiring terminal portion. When connected to.

  According to the present embodiment, even when the ITO film constituting the pixel electrode is employed for the surface layer of the source wiring terminal portion 19, the same effect as that of the third embodiment can be obtained.

Embodiment 5 FIG.
34 and 35 are a plan view and a cross-sectional view showing the manufacturing process of the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the fifth embodiment of the present invention. In the figure, 25 is a gate wiring terminal portion, 26 is a gate wiring terminal made of the gate wiring 2 material formed in the gate wiring terminal portion 25, and 27 is an opening of the interlayer insulating film 10 provided in the gate wiring terminal portion 25. . 1 and 2 are denoted by the same reference numerals and description thereof is omitted.

Next, a method for manufacturing the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the present embodiment will be described.
By the same method as in Reference Example 1, a gate wiring terminal 26 is formed on the transparent insulating substrate 1 simultaneously with the formation of the gate wiring 2 made of Ir. Subsequently, after forming the gate insulating film 4, the semiconductor layer 5, and the contact layer 6, the semiconductor layer 5 and the contact layer 6 of the gate wiring terminal portion 25 are removed by a dry etching method. Subsequently, after forming Ir or the like as a source electrode and a drain electrode (not shown), the Ir film of the gate wiring terminal portion 25 is removed in an etching process. Through the above steps, in the gate wiring terminal portion 25, only the gate insulating film 4 is formed on the gate wiring terminal 26 as shown in FIGS. 34-a and 35-a. Next, as shown in FIGS. 34-b and 35-b, a resin is applied, an opening 27 is formed on the gate wiring terminal 26 using a photoengraving method, and then baked to form the interlayer insulating film 10. . Next, as shown in FIGS. 34C and 35C, the gate insulating film 4 on the gate wiring terminal 26 is removed by etching using the interlayer insulating film 10 as a mask. Next, as shown in FIGS. 34-d and 35-d, an ITO film 22 constituting the pixel electrode is formed. Next, as shown in FIGS. 34E and 35E, the ITO film 22 of the gate wiring terminal portion 25 is removed by using a dry etching method. Through the above steps, the gate wiring terminal portion 25 whose surface layer is made of the gate wiring 2 material is formed.

Note that the gate insulating film 4 may be etched after the ITO film 22 is etched.
Further, an insulating film made of SiN may be formed under the interlayer insulating film 10 and the SiN on the gate wiring terminal 26 may be removed at the time of patterning the interlayer insulating film or after forming the SiN film.

  According to the present embodiment, by forming the gate wiring terminal 26 constituting the gate wiring terminal portion 25 with a metal whose oxide film is conductive, a good contact can be obtained in taking out the terminal.

Embodiment 6 FIG.
36 and 37 are a plan view and a cross-sectional view showing the manufacturing process of the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the sixth embodiment of the present invention. In the figure, 28 is an opening of the gate insulating film 4 provided in the gate wiring terminal portion 25, and 29 is a terminal made of an ITO film constituting the surface layer of the gate wiring terminal portion 25. The same parts as those in FIGS. 34 and 35 are denoted by the same reference numerals, and the description thereof is omitted.

Next, a method for manufacturing the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the present embodiment will be described.
As in the fifth embodiment, the gate wiring terminal 26 is formed on the transparent insulating substrate 1 simultaneously with the formation of the gate wiring 2 made of Ir. Subsequently, after forming the gate insulating film 4, the semiconductor layer 5, and the contact layer 6, the semiconductor layer 5 and the contact layer 6 of the gate wiring terminal portion 25 are removed by a dry etching method. Subsequently, after forming Ir or the like as a source electrode and a drain electrode (not shown), the Ir film of the gate wiring terminal portion 25 is removed in an etching process.
Next, as shown in FIGS. 36A and 37A, the gate insulating film 4 on the gate wiring terminal 26 is etched to form the opening 28. Next, as shown in FIGS. 36-b and 37-b, a resin is applied, an opening 27 is formed on the gate wiring terminal 26 using a photoengraving method, and then baked to form the interlayer insulating film 10. . Next, as shown in FIGS. 36-c and 37-c, after forming an ITO film constituting the pixel electrode, a terminal 29 made of the ITO film is formed on the gate wiring terminal portion 25 by using a dry etching method. Through the above steps, the gate wiring terminal portion 25 whose surface layer is composed of an ITO film is formed.

The formation of the opening 28 in the gate insulating film 4 may be performed after the formation of the interlayer insulating film 10.
In addition, an insulating film made of SiN may be formed under the interlayer insulating film 10 and an opening may be formed at the time of patterning the interlayer insulating film or after forming the SiN film.
Further, the ITO film formed in the opening 27 of the interlayer insulating film 10 of the gate wiring terminal portion 25 is removed during etching, and is formed on the gate wiring terminal 26 and the interlayer insulating film 10 with another metal or a conductive resin. The ITO film may be electrically connected.

  According to the present embodiment, even when the ITO film constituting the pixel electrode is employed for the surface layer of the gate wiring terminal portion 25, the same effect as in the fifth embodiment can be obtained.

Embodiment 7 FIG.
38 and 39 are a plan view and a cross-sectional view showing the manufacturing process of the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the seventh embodiment of the present invention. In the figure, 30 is a contact hole provided in the interlayer insulating film 10 of the gate wiring terminal portion 25, and 31 is a terminal made of a source electrode and drain electrode constituent material formed in the gate wiring terminal portion 25. The same parts as those in FIGS. 36 and 37 are denoted by the same reference numerals, and the description thereof is omitted.

Next, a method for manufacturing the gate wiring terminal portion on the array substrate of the liquid crystal display device according to the present embodiment will be described.
By the same method as in Reference Example 1, a gate wiring terminal 26 is formed on the transparent insulating substrate 1 simultaneously with the formation of the gate wiring 2 made of Al. Subsequently, after forming the gate insulating film 4, the semiconductor layer 5, and the contact layer 6, the semiconductor layer 5 and the contact layer 6 of the gate wiring terminal portion 25 are removed by a dry etching method. Subsequently, an opening 28 is formed in the gate insulating film 4 on the gate wiring terminal 26 (FIGS. 38A and 39A). Next, as shown in FIGS. 38B and 39B, Ir / Al / Cr is deposited as a source electrode and a drain electrode (not shown), and then the source electrode and the gate electrode terminal 25 are formed on the gate wiring terminal portion 25 by etching. A terminal 31 made of a drain electrode constituent material is formed. Next, as shown in FIGS. 38C and 38C, a resin is applied, a contact hole 30 is formed in the gate wiring terminal portion 25 using a photoengraving method, and then baked to form the interlayer insulating film 10. . Next, as shown in FIGS. 38D and 39D, after forming an ITO film constituting the pixel electrode, a terminal 29 made of the ITO film is formed on the gate wiring terminal portion 25 by using a dry etching method. Through the above steps, the gate wiring terminal portion 25 whose surface layer is composed of an ITO film is formed.

In addition, an insulating film made of SiN may be formed under the interlayer insulating film 10 and a contact hole may be formed when the interlayer insulating film is patterned or after the SiN film is formed.
Further, the ITO film formed in the contact hole 30 of the interlayer insulating film 10 of the gate wiring terminal portion 25 is removed during etching, and is formed on the gate wiring terminal 26 and the interlayer insulating film 10 with another metal or a conductive resin. The ITO film may be electrically connected.

  According to the present embodiment, even when the gate wiring terminal 26 is formed using Al, the oxide film constituting the source electrode and the drain electrode is formed on the gate wiring terminal 26 using the conductive metal. Next, by adopting an ITO film constituting the pixel electrode as the surface layer of the gate wiring terminal portion 25, good contact can be obtained in taking out the terminal.

It is a top view which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 1 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 1 of this invention. It is a top view which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 1 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 1 of this invention. It is a top view which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 1 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 1 of this invention. It is a flowchart which shows a part of manufacturing process of the liquid crystal display device by the reference example 1 of this invention. It is a flowchart which shows a part of manufacturing process of the liquid crystal display device by the reference example 1 of this invention. It is a top view which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 2 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 2 of this invention.

It is a top view which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 3 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 3 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 4 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 4 of this invention. It is a top view which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 5 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by the reference example 5 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 1 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 1 of this invention. It is sectional drawing which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 1 of this invention.

It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 2 of this invention. It is sectional drawing which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 2 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 2 of this invention. It is sectional drawing which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 2 of this invention. It is a flowchart which shows a part of manufacturing process of the liquid crystal display device by Embodiment 2 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 3 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by Embodiment 3 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 3 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by Embodiment 3 of this invention. It is a flowchart which shows a part of manufacturing process of the liquid crystal display device by Embodiment 3 of this invention.

It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 4 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by Embodiment 4 of this invention. It is a flowchart which shows a part of manufacturing process of the liquid crystal display device by Embodiment 4 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 5 of this invention. It is sectional drawing which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 5 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 6 of this invention. It is sectional drawing which shows the manufacturing process of the array substrate of the liquid crystal display device by Embodiment 6 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 7 of this invention. It is sectional drawing which shows the manufacturing process of the array board | substrate of the liquid crystal display device by Embodiment 7 of this invention. It is a top view which shows the manufacturing process of the array board | substrate of this kind of conventional liquid crystal display device. It is sectional drawing which shows the manufacturing process of the array board | substrate of the conventional liquid crystal display device.

1 transparent insulating substrate, 2 gate wiring, 3 gate electrode, 4 gate insulating film,
5 semiconductor layer (i layer a-Si), 6 contact layer (n layer a-Si),
7 source wiring, 8 source electrode, 9 drain electrode, 10 interlayer insulation film,
11 contact hole, 12 pixel electrode, 17 metal film,
18 conductive resin, 19 source wiring terminal, 20 source wiring terminal,
21 opening, 22 ITO film, 23 contact hole,
24 terminal by ITO film, 25 gate wiring terminal part,
26 gate wiring terminals, 27 openings, 28 openings,
29 Terminal by ITO film, 30 contact hole, 31 terminal.

Claims (3)

Forming a control electrode and a control electrode wiring on a transparent insulating substrate;
Forming an insulating film on the control electrode and the control electrode wiring;
Forming a semiconductor layer on the control electrode via the insulating film;
Forming a metal film on the semiconductor layer and simultaneously etching to form a first electrode, a first electrode wiring, and a second electrode;
Forming an interlayer insulating film on the first electrode, the first electrode wiring, and the second electrode;
Forming a transparent conductive film on the interlayer insulating film in a state where the first electrode, the first electrode wiring and the second electrode are covered with the interlayer insulating film, and etching to form a pixel electrode; ,
After forming the pixel electrode, the contact holes are formed in the second of the interlayer insulating film and the transparent conductive film on the electrode, a step of Ru exposing the second electrode through the contact hole,
Forming a metal film on the inner wall of the contact hole after the contact hole is formed, or filling the contact hole with a conductive resin to electrically connect the second electrode and the pixel electrode; A method for manufacturing a liquid crystal display device. Forming a control electrode and a control electrode wiring on a transparent insulating substrate;
Forming a first insulating film on the control electrode and the control electrode wiring;
Forming a semiconductor layer on the control electrode via the first insulating film;
Forming a metal film on the semiconductor layer and simultaneously etching to form a first electrode, a first electrode wiring, and a second electrode;
Forming a second insulating film covering the first electrode, the first electrode wiring and the second electrode, and then forming an interlayer insulating film on the second insulating film;
Forming a contact hole in the interlayer insulating film on the second electrode;
After forming the contact hole, a transparent conductive film is formed on the interlayer insulating film with the second insulating film covering the first electrode, the first electrode wiring, and the second electrode, and etching is performed. Forming a pixel electrode; and
Forming the pixel electrode, etching the second insulating film through the contact hole, and exposing the second electrode;
A method of manufacturing a liquid crystal display device, comprising: forming a metal film on an inner wall of the contact hole, and electrically connecting the second electrode and the pixel electrode. Forming a control electrode and a control electrode wiring on a transparent insulating substrate;
Forming a first insulating film on the control electrode and the control electrode wiring;
Forming a semiconductor layer on the control electrode via the first insulating film;
Forming a metal film on the semiconductor layer and simultaneously etching to form a first electrode, a first electrode wiring, and a second electrode;
Forming a second insulating film covering the first electrode, the first electrode wiring and the second electrode, and then forming an interlayer insulating film on the second insulating film;
A transparent conductive film is formed on the interlayer insulating film in a state where the first electrode, the first electrode wiring, and the second electrode are covered with the second insulating film and the interlayer insulating film, and the pixel electrode is etched. Forming a step;
After forming the pixel electrode, the second insulating film, the interlayer insulating film, and the transparent conductive film on the second electrode are etched to form a contact hole, and the second electrode is exposed through the contact hole. A process of
A method of manufacturing a liquid crystal display device, comprising: forming a metal film on an inner wall of the contact hole after electrically forming the contact hole, and electrically connecting the second electrode and the pixel electrode.

Images