JPH10275963A - Wiring board for high frequency - Google Patents
Wiring board for high frequencyInfo
- Publication number
- JPH10275963A JPH10275963A JP7981197A JP7981197A JPH10275963A JP H10275963 A JPH10275963 A JP H10275963A JP 7981197 A JP7981197 A JP 7981197A JP 7981197 A JP7981197 A JP 7981197A JP H10275963 A JPH10275963 A JP H10275963A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- crystal phase
- wiring board
- sio
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高周波用配線基板
に関するものであり、特に、銅や、銀と同時焼成が可能
で、配線層が、ストリップ線路、マイクロストリップ線
路、コプレーナ線路、（誘電体）導波管線路のうちの少
なくとも１種から構成され、マイクロ波、ミリ波用等の
高周波で用いられるパッケージ、誘電体共振器、ＬＣフ
ィルター、コンデンサ、誘電体導波路および誘電体アン
テナに用いることのできる高周波用配線基板に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency wiring board, and more particularly to a high-frequency wiring board which can be co-fired with copper or silver and whose wiring layer is formed of a strip line, a microstrip line, a coplanar line, or a dielectric layer. ) A package composed of at least one of waveguide lines and used at a high frequency for microwaves, millimeter waves, etc., a dielectric resonator, an LC filter, a capacitor, a dielectric waveguide, and a dielectric antenna. The present invention relates to a high-frequency wiring board that can be used.
【０００２】[0002]
【従来技術】従来より、セラミック多層配線基板として
は、アルミナ質焼結体からなる絶縁基板の表面または内
部にタングステンやモリブデンなどの高融点金属からな
る配線層が形成されたものが最も普及している。また、
最近に至り、高度情報化時代を迎え、使用される周波数
帯域はますます高周波化に移行しつつある。2. Description of the Related Art Conventionally, as a ceramic multilayer wiring board, a ceramic multilayer wiring board in which a wiring layer made of a refractory metal such as tungsten or molybdenum is formed on the surface or inside of an insulating substrate made of an alumina-based sintered body has been most widely used. I have. Also,
Recently, with the era of advanced information, the frequency band used has been shifting to higher and higher frequencies.
【０００３】このような、高周波の信号の伝送を必要を
行う高周波配線基板においては、高周波信号を損失なく
伝送する上で、配線層を形成する導体の抵抗が小さいこ
と、また絶縁基板の高周波領域での誘電損失が小さいこ
とが要求される。[0003] In such a high-frequency wiring board which requires transmission of high-frequency signals, in order to transmit high-frequency signals without loss, the resistance of the conductor forming the wiring layer must be small, and the high-frequency region of the insulating substrate must be low. It is required that the dielectric loss at the point is small.
【０００４】ところが、従来のタングステンや、モリブ
デンなどの高融点金属は導体抵抗が大きく、特に３０Ｇ
Ｈｚ以上のミリ波領域において高周波用配線基板には使
用できないことから、これらの金属に代えて銅、銀、金
などの低抵抗金属を使用することが必要である。However, conventional high-melting metals such as tungsten and molybdenum have a large conductor resistance, especially 30G.
Since it cannot be used for a high-frequency wiring board in the millimeter wave region of Hz or more, it is necessary to use a low-resistance metal such as copper, silver, or gold instead of these metals.
【０００５】このような低抵抗金属からなる配線層は、
アルミナと同時焼成することが不可能であるため、最近
では、ガラス、またはガラスとセラミックスとの複合材
料からなる、いわゆるガラスセラミックスを絶縁基板と
して用いた配線基板が開発されつつある。例えば、特公
平４−１２６３９号のように、ガラスにＳｉＯ2 系フィ
ラーを添加し、銅、銀、金などの低抵抗金属からなる配
線層と９００〜１０００℃の温度で同時焼成した多層配
線基板や、特開昭６０−２４０１３５号のように、ホウ
ケイ酸亜鉛系ガラスに、Ａｌ2 Ｏ3 、ジルコニア、ムラ
イトなどのフィラーとして添加したものを低抵抗金属と
同時焼成したものなどが提案されている。その他、特開
平５−２９８９１９号には、ムライトやコージェライト
を結晶相として析出させたガラスセラミックス材料が提
案されている。A wiring layer made of such a low-resistance metal is
Since it is impossible to co-fire with alumina, recently, a wiring board using glass or a composite material of glass and ceramic, that is, a so-called glass ceramic as an insulating substrate has been developed. For example, as disclosed in Japanese Patent Publication No. 4-12639, a multilayer wiring board obtained by adding an SiO 2 filler to glass and simultaneously firing a wiring layer made of a low-resistance metal such as copper, silver, and gold at a temperature of 900 to 1000 ° C. Further, as disclosed in Japanese Patent Application Laid-Open No. Sho 60-240135, a material in which a filler such as Al 2 O 3 , zirconia, or mullite is added to a zinc borosilicate glass and co-fired with a low-resistance metal has been proposed. . In addition, Japanese Patent Application Laid-Open No. 5-298919 proposes a glass ceramic material in which mullite or cordierite is precipitated as a crystal phase.
【０００６】一方、多層配線基板に種々の電子部品や入
出力端子等を接続する工程上で基板に加わる応力から基
板が破壊したり、欠けを生じたりすることを防止する為
に、絶縁基板を構成する絶縁材料の機械的強度が高いこ
とも要求されている。On the other hand, in order to prevent the substrate from being broken or chipped due to the stress applied to the substrate in the process of connecting various electronic components, input / output terminals, etc. to the multilayer wiring board, the insulating substrate must be provided. It is also required that the insulating material to be formed has high mechanical strength.
【０００７】[0007]
【発明が解決しようとする問題点】しかしながら、前記
の従来のガラスセラミックスでは、銅、銀、金などの低
抵抗金属との同時焼成が可能であっても、周波数が１Ｇ
Ｈｚ以上の高周波信号を用いる高周波用配線基板の絶縁
基板として具体的に検討されておらず、そのほとんどが
誘電損失が高く、十分満足できる高周波特性を有するも
のではなかった。また、機械的特性においても、ガラス
セラミックス焼結体は、アルミナ質焼結体に比較して格
段に強度が低く、せいぜい１５ｋｇ／ｍｍ2 程度であ
り、実用的に満足できるものではなかった。However, in the above-mentioned conventional glass ceramics, even if simultaneous firing with a low-resistance metal such as copper, silver or gold is possible, the frequency is 1G.
It has not been specifically studied as an insulating substrate of a high-frequency wiring board using a high-frequency signal of not less than Hz, most of which have high dielectric loss and do not have sufficiently satisfactory high-frequency characteristics. Further, in terms of mechanical properties, the glass ceramic sintered body was much lower in strength than the alumina sintered body, and was at most about 15 kg / mm 2 , which was not practically satisfactory.
【０００８】従って、本発明は、金、銀、銅を配線導体
として多層化が可能となるように１０００℃以下で焼成
可能であるとともに、１ＧＨｚ以上の高周波領域におい
て誘電率が低く、誘電正接が小さく、且つ高強度を有す
る高周波用配線基板を提供することを目的とする。Accordingly, the present invention can be fired at 1000 ° C. or lower so that multilayers can be formed using gold, silver, and copper as wiring conductors, and have a low dielectric constant and a high dielectric loss tangent in a high frequency region of 1 GHz or higher. An object of the present invention is to provide a high-frequency wiring board that is small and has high strength.
【０００９】[0009]
【問題点を解決するための手段】本発明者は、上記問題
点を鋭意検討した結果、絶縁層の表面あるいは内部に、
周波数１ＧＨｚ以上の高周波信号が伝送可能な配線層が
配設されてなる高周波用配線基板において、前記絶縁層
中に少なくともＳｉＯ2 、Ａｌ2 Ｏ3 、ＭｇＯ、ＺｎＯ
およびＢ2 Ｏ3 を含む場合、非晶質成分として、Ａｌ2
Ｏ3 、ＭｇＯ、ＺｎＯを含む場合、焼結体の高周波領域
での損失が増大すること、非晶質相を、実質上、ＳｉＯ
2 、あるいは、ＳｉＯ2 とＢ2 Ｏ3 から構成し、その他
の金属化合物を結晶相として析出させると、高周波領域
における誘電損失を大幅に低減でき、低損失で高周波信
号を伝送できることを見出し、本発明に至った。Means for Solving the Problems As a result of intensive studies on the above problems, the present inventor has found that the surface or inside of the insulating layer has
In a high-frequency wiring board provided with a wiring layer capable of transmitting a high-frequency signal of a frequency of 1 GHz or more, at least SiO 2 , Al 2 O 3 , MgO, ZnO
And B 2 O 3 , the amorphous component is Al 2
When O 3 , MgO, and ZnO are contained, the loss of the sintered body in the high-frequency region increases, and the amorphous phase is substantially changed to SiO 2.
2 and / or SiO 2 and B 2 O 3, and by depositing other metal compounds as a crystal phase, the dielectric loss in the high-frequency region can be significantly reduced and high-frequency signals can be transmitted with low loss. Invented the invention.
【００１０】即ち、本発明の高周波用配線基板は、絶縁
層の表面あるいは内部に、周波数１ＧＨｚ以上の高周波
信号が伝送可能な配線層が配設されてなる高周波用配線
基板において、前記絶縁層が、ＳｉＯ2 、Ａｌ2 Ｏ3 、
ＭｇＯおよびＺｎＯを構成成分として含む複数の結晶相
と、ＳｉＯ2 、またはＳｉＯ2 とＢ2 Ｏ3 からなる非晶
質相とを具備する焼結体からなることを特徴とするもの
である。That is, a high-frequency wiring board according to the present invention is a high-frequency wiring board in which a wiring layer capable of transmitting a high-frequency signal having a frequency of 1 GHz or higher is provided on or in an insulating layer. , SiO 2 , Al 2 O 3 ,
A plurality of crystalline phase containing MgO and ZnO as a component, and is characterized in that a sintered body and a SiO 2, or consists of SiO 2 and B 2 O 3 amorphous phase.
【００１１】また、前記結晶相として、少なくともＺｎ
ＯおよびＡｌ2 Ｏ3 を含む結晶相と、少なくともＳｉＯ
2 およびＺｎＯを含む結晶相と、少なくともＳｉＯ2 お
よびＭｇＯ相とを含み、前記少なくともＺｎＯおよびＡ
ｌ2 Ｏ3 を含む結晶相として、スピネル型結晶相を、前
記少なくともＳｉＯ2 およびＺｎＯを含む結晶相とし
て、ウイレマイト型結晶相を、さらに前記少なくともＳ
ｉＯ2 およびＭｇＯ相を含む結晶相として、エンスタタ
イト型結晶相を含むことを特徴とする。Further, at least Zn is used as the crystal phase.
A crystal phase containing O and Al 2 O 3 and at least SiO 2
2 and a crystal phase containing ZnO, and at least a SiO 2 and MgO phase, wherein at least ZnO and A
As a crystal phase containing l 2 O 3 , a spinel crystal phase is used as the crystal phase containing at least SiO 2 and ZnO, and a willemite crystal phase is used as the crystal phase containing at least SiO 2 and ZnO.
It is characterized in that an enstatite type crystal phase is included as a crystal phase containing iO 2 and MgO phases.
【００１２】さらに、前記配線層が、ストリップ線路、
マイクロストリップ線路、コプレーナ線路、誘電体導波
管線路のうちの少なくとも１種から構成され、前記絶縁
層と同時焼成によって形成されたことを特徴とするもの
である。Further, the wiring layer is a strip line,
It is characterized by comprising at least one of a microstrip line, a coplanar line, and a dielectric waveguide line, and formed by co-firing with the insulating layer.
【００１３】[0013]
【発明の実施の形態】本発明の高周波用配線基板とし
て、高周波素子を搭載したパッケージを例として図１を
もとに説明する。図１は、高周波用配線基板を具備する
高周波用パッケージの概略断面図である。図１によれ
ば、パッケージ１は、絶縁材料からなる絶縁基板２と蓋
体３によりキャビティ４が形成されており、そのキャビ
ティ４内には、高周波素子５が搭載されている。なお、
蓋体３は、高周波素子５からの電磁波が外部に漏洩する
のを防止できる材料から構成されることが望ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS A high-frequency wiring board according to the present invention will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view of a high-frequency package including a high-frequency wiring board. According to FIG. 1, the package 1 has a cavity 4 formed by an insulating substrate 2 made of an insulating material and a lid 3, and a high-frequency element 5 is mounted in the cavity 4. In addition,
The lid 3 is preferably made of a material that can prevent the electromagnetic wave from the high-frequency element 5 from leaking outside.
【００１４】また、絶縁基板２の表面には、高周波素子
５と電気的に接続された配線層６が形成されている。本
発明によれば、この配線層６には、高周波信号として
は、１ＧＨｚ以上、特に２０ＧＨｚ以上、さらには、５
０ＧＨｚ以上、またさらには７０ＧＨｚ以上の高周波信
号が伝送される。従って、配線層６としては、これらの
高周波信号が損失なく伝送されることが必要となる。そ
のため、配線層６は、ストリップ線路、マイクロストリ
ップ線路、コプレーナ線路、誘電体導波管線路のうちの
少なくとも１種から構成されることが望ましい。また、
配線層６は、高周波信号の伝送時に導体損失を極力低減
するために、銅、銀あるいは金などの低抵抗金属からな
ることが望ましい。On the surface of the insulating substrate 2, a wiring layer 6 electrically connected to the high-frequency element 5 is formed. According to the present invention, the wiring layer 6 has a high frequency signal of 1 GHz or more, particularly 20 GHz or more,
A high-frequency signal of 0 GHz or more, or even 70 GHz or more, is transmitted. Therefore, it is necessary for the wiring layer 6 to transmit these high-frequency signals without loss. Therefore, it is desirable that the wiring layer 6 be composed of at least one of a strip line, a microstrip line, a coplanar line, and a dielectric waveguide line. Also,
The wiring layer 6 is desirably made of a low-resistance metal such as copper, silver, or gold in order to minimize conductor loss when transmitting a high-frequency signal.
【００１５】図１のパッケージにおいては、配線層６
は、アース層７とともにマイクロストリップ線路８を形
成している。また、この絶縁基板２の裏面には、外部電
気回路基板と接続される配線層９が形成され、アース層
７とともにマイクロストリップ線路１０を形成してい
る。そして、配線層６および配線層９は、その端部がア
ース層７に形成されたスロット孔１１を介して、各配線
層の端部が対峙するように形成することにより電磁結合
され、マイクロストリップ線路８とマイクロストリップ
線路１０間で損失の少ない信号の伝送が行われる。In the package shown in FIG.
Form a microstrip line 8 together with the ground layer 7. A wiring layer 9 connected to an external electric circuit board is formed on the back surface of the insulating substrate 2, and a microstrip line 10 is formed together with the ground layer 7. The wiring layer 6 and the wiring layer 9 are electromagnetically coupled by forming the ends through slot holes 11 formed in the ground layer 7 so that the ends of the wiring layers are opposed to each other. Transmission of a low-loss signal between the line 8 and the microstrip line 10 is performed.
【００１６】本発明によれば、図１に示されるような高
周波パッケージにおける前記絶縁基板２を、構成成分と
して、少なくともＳｉＯ2 、Ａｌ2 Ｏ3 、ＭｇＯ、Ｚｎ
ＯおよびＢ2 Ｏ3 を含む焼結体から構成する。また、こ
の焼結体は、結晶相と、その結晶相の粒界に非晶質相が
存在する。本発明によれば、結晶相は、ＳｉＯ2 、Ａｌ
2 Ｏ3 、ＭｇＯ、ＺｎＯを構成成分とする複数の結晶相
からなり、非晶質相は、実質的にＳｉＯ2 、またはＳｉ
Ｏ2 とＢ2 Ｏ3 からなることが重要である。According to the present invention, the insulating substrate 2 in the high-frequency package as shown in FIG. 1 is composed of at least SiO 2 , Al 2 O 3 , MgO, Zn
It is composed of a sintered body containing O and B 2 O 3 . Further, this sintered body has a crystal phase and an amorphous phase at a grain boundary of the crystal phase. According to the present invention, the crystal phase is SiO 2 , Al
It consists of a plurality of crystal phases containing 2 O 3 , MgO and ZnO as constituents, and the amorphous phase is substantially composed of SiO 2 or Si.
It is important to consist of O 2 and B 2 O 3 .
【００１７】この非晶質相は、焼結体の高周波特性を決
定する１つの要因であり、特に高周波領域においては、
誘電損失を左右し、特に誘電損失を大きくしてしまう要
因である。本発明によれば、非晶質相が、ＳｉＯ2 、ま
たはＳｉＯ2 とＢ2 Ｏ3 からなる場合には、非晶質相自
体の誘電損失を低減できる結果、焼結体全体としての高
周波領域における誘電損失を低減することができるので
ある。This amorphous phase is one factor that determines the high-frequency characteristics of the sintered body.
This is a factor that influences the dielectric loss and particularly increases the dielectric loss. According to the present invention, when the amorphous phase is made of SiO 2 , or SiO 2 and B 2 O 3 , the dielectric loss of the amorphous phase itself can be reduced. Can be reduced.
【００１８】従って、非晶質相が、ＳｉＯ2 、またはＳ
ｉＯ2 とＢ2 Ｏ3 以外に、Ａｌ2 Ｏ3 、ＺｎＯ、ＭｇＯ
などの他の成分が含まれる場合には、非晶質相の高周波
領域の誘電損失が増大し、焼結体の誘電損失も増大する
結果となるのである。より具体的には、非晶質相中にお
けるＡｌ、Ｚｎ、Ｍｇの含有量は各元素がそれぞれ５０
ｐｐｍ以下であり、ＳｉおよびＢ以外の元素量が合計で
１００ｐｐｍ以下であることが望ましい。また、この非
晶質相は、焼結体中において、２０〜５０重量％の割合
で含有されることが望ましい。Therefore, when the amorphous phase is SiO 2 or S
In addition to iO 2 and B 2 O 3 , Al 2 O 3 , ZnO, MgO
When such other components are contained, the dielectric loss in the high frequency region of the amorphous phase increases, and the dielectric loss of the sintered body also increases. More specifically, the content of Al, Zn, and Mg in the amorphous phase is 50% for each element.
ppm or less, and the total amount of elements other than Si and B is desirably 100 ppm or less. The amorphous phase is desirably contained in the sintered body at a rate of 20 to 50% by weight.
【００１９】従って、焼結体中に含まれるＡｌ2 Ｏ3 、
ＺｎＯ、ＭｇＯは、実質的にすべて結晶相中に取り込ま
れていることが必要となることから、結晶相として、Ｓ
ｉＯ2 、Ａｌ2 Ｏ3 、ＭｇＯ、ＺｎＯを構成成分とする
複数の結晶相からなることから必要である。望ましい結
晶相としては、少なくともＺｎＯおよびＡｌ2 Ｏ3 を含
む結晶相と、少なくともＳｉＯ2 およびＺｎＯを含む結
晶相と、少なくともＳｉＯ2 およびＭｇＯ相を含む結晶
相を含むことが望ましい。これら３種の結晶相によっ
て、Ａｌ2 Ｏ3 、ＭｇＯおよびＺｎＯを結晶相中に取り
込むことができるのである。Therefore, Al 2 O 3 ,
Since ZnO and MgO need to be substantially entirely incorporated in the crystal phase, S
This is necessary because it is composed of a plurality of crystal phases containing iO 2 , Al 2 O 3 , MgO, and ZnO as constituent components. Desirable crystal phases preferably include a crystal phase containing at least ZnO and Al 2 O 3 , a crystal phase containing at least SiO 2 and ZnO, and a crystal phase containing at least SiO 2 and MgO phase. With these three crystal phases, Al 2 O 3 , MgO and ZnO can be taken into the crystal phases.
【００２０】なお、さらに具体的には、図２の焼結体の
組織の概略図に示すように、少なくともＺｎＯおよびＡ
ｌ2 Ｏ3 を含む結晶相としてＺｎＡｌ2 Ｏ4 で表される
スピネル型結晶相（ＳＰ）が、少なくともＳｉＯ2 およ
びＺｎＯを含む結晶相としてＺｎ2 ＳｉＯ4 で表される
ウイレマイト型結晶相（Ｗ）が、さらに少なくともＳｉ
Ｏ2 およびＭｇＯ相を含む結晶相としてＭｇＳｉＯ3 で
表されるエンスタタイト型結晶相（Ｅ）が存在するのが
よい。なお、各結晶相中には、各成分以外に他の成分が
含まれてもよい。例えば、ＺｎＡｌ2 Ｏ4 には、ＭｇＡ
ｌ2 Ｏ4 からなるガーナイト型結晶が固溶して、（Ｚ
ｎ，Ｍｇ）Ａｌ2 Ｏ4 のスピネル結晶相からなる場合も
ある。結晶相としては、上記の３種の結晶相以外に、Ｓ
ｉＯ2 （Ｓ）、コージェライト、Ｍｇ2 Ｂ2 Ｏ5 などの
結晶相が含まれてもよい。また、これらの結晶相の粒界
には、ＳｉＯ2 、あるいはＳｉＯ2 とＢ2 Ｏ3 とからな
る非晶質相（Ｇ）が存在する。More specifically, as shown in the schematic diagram of the structure of the sintered body in FIG. 2, at least ZnO and A
A spinel-type crystal phase (SP) represented by ZnAl 2 O 4 as a crystal phase containing l 2 O 3 , and a willemite-type crystal phase (W) represented by Zn 2 SiO 4 as a crystal phase containing at least SiO 2 and ZnO ) But at least Si
An enstatite-type crystal phase (E) represented by MgSiO 3 is preferably present as a crystal phase containing the O 2 and MgO phases. In addition, in each crystal phase, other components may be included in addition to each component. For example, ZnA 2 O 4 has MgA
The garnite type crystal composed of l 2 O 4 forms a solid solution and (Z
It may be composed of a spinel crystal phase of (n, Mg) Al 2 O 4 . As the crystal phase, in addition to the above three crystal phases, S
Crystal phases such as iO 2 (S), cordierite, and Mg 2 B 2 O 5 may be included. At the grain boundaries of these crystal phases, there is SiO 2 or an amorphous phase (G) composed of SiO 2 and B 2 O 3 .
【００２１】また、本発明における絶縁基板は、全体組
成として、ＳｉＯ2 を３０〜６０重量％、Ａｌ2 Ｏ3 を
１８〜２５重量％、ＭｇＯを５〜１３重量％、ＺｎＯを
５〜３５重量％、Ｂ2 Ｏ3 を５〜１２重量％の割合で含
むことが望ましい。The insulating substrate of the present invention has a total composition of 30 to 60% by weight of SiO 2 , 18 to 25% by weight of Al 2 O 3 , 5 to 13% by weight of MgO, and 5 to 35% by weight of ZnO. %, desirably containing B 2 O 3 in a proportion of 5 to 12 wt%.
【００２２】本発明において、上記絶縁基板は、例え
ば、以下の方法によって作成される。In the present invention, the insulating substrate is prepared, for example, by the following method.
【００２３】まず、出発原料として、ＳｉＯ2 、Ａｌ2
Ｏ3 、ＭｇＯ、ＺｎＯ、Ｂ2 Ｏ3 を含む結晶化ガラス
と、ＺｎＯ粉末およびＳｉＯ2(溶融シリカ）粉末を用
い、これらを所望の比率で混合する。この場合、これら
の成分は、最終的に、一部のＳｉＯ2 、またはＳｉＯ2
とＢ2 Ｏ3 を残し、残部はすべて結晶化されることが必
要である。かかる観点から望ましい組成としては、結晶
化ガラスが、ＳｉＯ2 ４０〜５２重量％、Ａｌ2 Ｏ3 １
４〜３２重量％、ＭｇＯ４〜１５重量％、ＺｎＯ６〜１
６重量％、Ｂ2 Ｏ3 ５〜１５重量％であることが望まし
く、上記組成からなるガラス粉末に対して、ＺｎＯ粉末
を５〜２９重量％、ＳｉＯ2 （溶融シリカ）を１〜２５
重量％の割合で添加することが望ましい。First, as starting materials, SiO 2 , Al 2
Crystallized glass containing O 3 , MgO, ZnO, B 2 O 3 , ZnO powder and SiO 2 (fused silica) powder are used and mixed at a desired ratio. In this case, these components will eventually end up with some SiO 2 or SiO 2
And B 2 O 3 , and the rest needs to be crystallized. The composition desirably from this point of view, crystallized glass, SiO 2 40 to 52 wt%, Al 2 O 3 1
4-32% by weight, MgO4-15% by weight, ZnO6-1
6 wt% and B 2 O 3 are preferably 5 to 15 wt%, and ZnO powder is 5 to 29 wt% and SiO 2 (fused silica) is 1 to 25 wt% based on the glass powder having the above composition.
It is desirable to add at a ratio of% by weight.
【００２４】上記の組成で秤量混合された混合粉末を用
いて所定の成形体を作成し、その成形体を８３０〜１０
００℃の酸化性雰囲気または不活性雰囲気中で焼成する
ことにより作製することができる。A predetermined molded body is prepared using the mixed powder weighed and mixed with the above composition, and the molded body is 830 to 10
It can be manufactured by baking in an oxidizing atmosphere or an inert atmosphere at 00 ° C.
【００２５】また、上記の焼結体を用いて本発明の高周
波用配線基板を作製するには、前記混合粉末を用いて、
適当な有機溶剤、溶媒を用いて混合してスラリーを調製
し、これを従来周知のドクターブレード法やカレンダー
ロール法、あるいは圧延法、プレス成形法により、シー
ト状に成形する。そして、このシート状成形体に所望に
よりスルーホールを形成した後、スルーホール内に、
銅、金、銀のうちの少なくとも１種を含む金属ペースト
を充填する。そして、シート状成形体表面には、高周波
信号が伝送可能な高周波線路パターンを金属ペーストを
用いてスクリーン印刷法、グラビア印刷法などの配線層
の厚みが５〜３０μｍとなるように、印刷塗布する。そ
の後、複数のシート状成形体を位置合わせして積層圧着
した後、８３０〜１０００℃の酸化性雰囲気または非酸
化性雰囲気で焼成することにより、配線基板を作製する
ことができる。In order to produce the high-frequency wiring board of the present invention using the above-mentioned sintered body,
A slurry is prepared by mixing using an appropriate organic solvent and a solvent, and the slurry is formed into a sheet by a well-known doctor blade method, calender roll method, rolling method, or press forming method. Then, after forming a through hole as desired in the sheet-like molded body, in the through hole,
A metal paste containing at least one of copper, gold, and silver is filled. Then, a high-frequency line pattern capable of transmitting a high-frequency signal is printed and applied on the surface of the sheet-like molded body using a metal paste by a screen printing method, a gravure printing method, or the like so that the thickness of the wiring layer is 5 to 30 μm. . After that, the plurality of sheet-shaped molded bodies are aligned and laminated and pressed, and then fired in an oxidizing atmosphere or a non-oxidizing atmosphere at 830 to 1000 ° C., whereby a wiring substrate can be manufactured.
【００２６】そして、この配線基板の表面には、高周波
素子が搭載され配線層と高周波信号の伝達が可能なよう
に接続される。接続方法としては、配線層上に直接搭載
させて接続させたり、あるいはワイヤーボンディング
や、ＴＡＢテープなどにより配線層と高周波素子とが接
続される。On the surface of the wiring board, a high-frequency element is mounted and connected to a wiring layer so that high-frequency signals can be transmitted. As a connection method, the wiring layer is directly mounted on the wiring layer and connected, or the wiring layer and the high-frequency element are connected by wire bonding, TAB tape, or the like.
【００２７】さらに、高周波素子が搭載された配線基板
表面に、絶縁基板と同種の絶縁材料や、その他の絶縁材
料、あるいは放熱性が良好な金属等からなるキャップを
ガラス、樹脂、ロウ材等の接着剤により接合することに
より、高周波素子を気密に封止することができ、これに
より高周波用半導体装置を作製することができる。Further, a cap made of the same kind of insulating material as the insulating substrate, another insulating material, or a metal having good heat dissipation properties is provided on the surface of the wiring board on which the high-frequency element is mounted, such as glass, resin or brazing material. By bonding with an adhesive, the high-frequency element can be hermetically sealed, whereby a high-frequency semiconductor device can be manufactured.
【００２８】[0028]
【実施例】下記の組成からなる２種のガラスを準備し
た。EXAMPLES Two glasses having the following compositions were prepared.
【００２９】 ガラスＡ：ＳｉＯ2 ４４重量％−Ａｌ2 Ｏ3 ２９重量％
−ＭｇＯ１１重量％ −ＺｎＯ７重量％−Ｂ2 Ｏ3 ９重量％ ガラスＢ：ＳｉＯ2 ５０重量％−Ａｌ2 Ｏ3 １５重量％
−ＭｇＯ９重量％ −ＺｎＯ１８重量％−Ｂ2 Ｏ3 ８重量％ そして、このガラス粉末に対して、平均粒径が１μｍ以
下のＺｎＯ粉末、溶融シリカ粉末（ａ−ＳｉＯ2 ）を用
いて、表１、表２の組成に従い混合した。Glass A: SiO 2 44% by weight—Al 2 O 3 29% by weight
-MgO11 wt% -ZnO7 wt% -B 2 O 3 9 wt% Glass B: SiO 2 50 wt% -Al 2 O 3 15 wt%
-MgO9 wt% -ZnO18 wt% -B 2 O 3 8% by weight and, with respect to the glass powder, the average particle size using 1μm or less ZnO powder, fused silica powder (a-SiO 2), Table 1 And according to the composition shown in Table 2.
【００３０】そして、この混合物に有機バインダー、可
塑剤、トルエンを添加し、スラリーを調製した後、この
スラリーを用いてドクターブレード法により厚さ３００
μｍのグリーンシートを作製した。そして、このグリー
ンシートを５枚積層し、５０℃の温度で１００ｋｇ／ｃ
ｍ2 の圧力を加えて熱圧着した。得られた積層体を水蒸
気含有／窒素雰囲気中で７００℃で脱バインダーした
後、乾燥窒素中で表１、表２の条件において焼成して高
周波用多層基板用磁器組成物の焼結体を得た。Then, an organic binder, a plasticizer, and toluene were added to the mixture to prepare a slurry.
A μm green sheet was prepared. Then, five green sheets are laminated and 100 kg / c at a temperature of 50 ° C.
Thermocompression bonding was performed by applying a pressure of m 2 . After debinding the obtained laminate at 700 ° C. in a water vapor-containing / nitrogen atmosphere, it is fired in dry nitrogen under the conditions shown in Tables 1 and 2 to obtain a sintered body of the ceramic composition for a high-frequency multilayer substrate. Was.
【００３１】得られた焼結体について誘電率、誘電正
接、抗折強度を以下の方法で評価した。誘電率、誘電正
接は、試料形状 直径１０ｍｍ、厚み５ｍｍの試料を切
り出し、１５〜２０ＧＨｚにてネットワークアナライザ
ー、シンセサイズドスイーパーを用いて誘電体円柱共振
器法により測定した。測定では、φ５０のＣｕ板治具の
間に試料の誘電体基板を挟んで測定した。共振器のＴＥ
０１１モードの共振特性より、誘電率、誘電正接を算出
した。抗折強度は、試料形状 長さ７０ｍｍ，厚さ３ｍ
ｍ，幅４ｍｍとし、ＪＩＳ−Ｃ−２１４１の規定に準じ
て３点曲げ試験を行った。測定の結果は表１、表２に示
した。The obtained sintered body was evaluated for permittivity, dielectric loss tangent, and bending strength by the following methods. The dielectric constant and the dielectric loss tangent were measured by cutting out a sample having a diameter of 10 mm and a thickness of 5 mm, using a network analyzer and a synthesized sweeper at 15 to 20 GHz using a dielectric cylinder resonator method. In the measurement, a dielectric substrate of a sample was sandwiched between φ50 Cu plate jigs. Resonator TE
The dielectric constant and the dielectric loss tangent were calculated from the resonance characteristics of the 011 mode. The flexural strength is as follows: sample shape 70 mm long, 3 m thick
m and a width of 4 mm, and a three-point bending test was performed according to the provisions of JIS-C-2141. The measurement results are shown in Tables 1 and 2.
【００３２】また、焼結体中における結晶相をＸ線回折
測定から同定し、さらに非晶質相中の構成元素をＥＤＸ
（ＴＥＭ）によって、その量が５０ｐｐｍ以上の元素を
表１、表２に示した。また、同様にリートベルト法によ
り結晶化度を割り出し、非晶質相の重量比率を算出し
た。The crystal phase in the sintered body was identified by X-ray diffraction measurement, and the constituent elements in the amorphous phase were identified by EDX
Tables 1 and 2 show elements whose amounts are 50 ppm or more by (TEM). Similarly, the crystallinity was determined by the Rietveld method, and the weight ratio of the amorphous phase was calculated.
【００３３】また、一部の試料については、フィラー成
分として、ＺｎＯ、ＳｉＯ2 （非晶質）に代わり、結晶
質シリカ粉末（ｃ−ＳｉＯ2 ）、Ａｌ2 Ｏ3 粉末、Ｃａ
Ｏ粉末を用いて同様に焼結体を作製し評価した（試料Ｎ
o.１、８、９、２２、２３）。また、上記結晶化ガラス
Ａ、Ｂに代わり、以下の組成からなるガラスＣおよびガ
ラスＤを用いて同様に評価を行った（試料Ｎo.２４〜２
７）。For some samples, instead of ZnO and SiO 2 (amorphous) as filler components, crystalline silica powder (c-SiO 2 ), Al 2 O 3 powder, Ca 2
Similarly, a sintered body was prepared using O powder and evaluated (sample N
o.1, 8, 9, 22, 23). In addition, instead of the crystallized glasses A and B, the same evaluation was performed using glass C and glass D having the following compositions (sample Nos. 24 to 2).
7).
【００３４】 ガラスＣ：ＳｉＯ2 １０．４重量％−Ａｌ2 Ｏ3 ２．５
重量％ −Ｂ2 Ｏ3 ４５．３重量％−ＺｎＯ３５．２重量％ −Ｎａ2 Ｏ６．６重量％ ガラスＤ：ＳｉＯ2 １４重量％−Ａｌ2 Ｏ3 ２４．７重
量％ −Ｂ2 Ｏ3 ２２．６重量％−ＣａＯ１４．２重量％ −Ｌｉ2 Ｏ１２．８重量％−Ｎａ2 Ｏ１１．７重量％Glass C: SiO 2 10.4% by weight—Al 2 O 3 2.5
Wt% -B 2 O 3 45.3 wt% -ZnO35.2 wt% -Na 2 O6.6 wt% Glass D: SiO 2 14 wt% -Al 2 O 3 24.7 wt% -B 2 O 3 22 .6 weight% -CaO14.2 weight% -Li 2 O12.8 weight% -Na 2 O11.7% by weight
【００３５】[0035]
【表１】 [Table 1]
【００３６】[0036]
【表２】 [Table 2]
【００３７】表１、表２の結果から明らかなように、焼
結体中の非晶質成分が、ＳｉＯ2 、またはＳｉＯ2 とＢ
2 Ｏ3 とからなる本発明品は、いずれも６０ＧＨｚの測
定周波数において誘電損失が２０×１０-4以下、誘電率
が５．５以下が達成されるとともに、強度２０ｋｇ／ｍ
ｍ2 以上の優れた強度が達成された。また、これらの試
料に対して、６０ＧＨｚ以下の測定周波数で測定した結
果、当然ながら、各試料の６０ＧＨｚでの誘電損失より
もさらに低い誘電損失を示した。As is clear from the results in Tables 1 and 2, the amorphous component in the sintered body was SiO 2 , or SiO 2 and B
Each of the products of the present invention composed of 2 O 3 achieves a dielectric loss of 20 × 10 −4 or less and a dielectric constant of 5.5 or less at a measurement frequency of 60 GHz and a strength of 20 kg / m 2.
Excellent strength of at least m 2 was achieved. In addition, as a result of measuring these samples at a measurement frequency of 60 GHz or less, it was obvious that the dielectric loss was lower than the dielectric loss of each sample at 60 GHz.
【００３８】これに対して、非晶質相中にＳｉＯ2 、Ｂ
2 Ｏ3 以外の成分が混入した試料Ｎo.１、８、９、２２
〜２７は、いずれも強度や誘電率の特性上では、大きな
変化はないものの、誘電損失が４０×１０-4以上と極端
に大きくなった。On the other hand, in the amorphous phase, SiO 2 , B
Samples No. 1, 8, 9, 22 mixed with components other than 2 O 3
In Nos. To 27, the dielectric loss was extremely large at 40 × 10 −4 or more, although there was no significant change in the characteristics of strength and dielectric constant.
【００３９】[0039]
【発明の効果】以上詳述した通り、本発明の高周波用配
線基板は、配線層に対して、１ＧＨｚ以上のマイクロ波
及びミリ波等、さらには６０ＧＨｚもの高周波の信号が
伝送される場合においても絶縁基板の誘電損失が格段に
低く、しかも１０００℃以下の低温で焼成できることか
ら、銅などの低抵抗金属による配線層を形成できること
から、高周波信号を極めて良好に、損失なく伝送するこ
とができる。しかも、この絶縁基板は、高い強度を有す
ることから、配線基板の取扱いや過酷な条件下で使用さ
れる場合においてもクラック等による断線など発生がな
く、高信頼性の配線基板を提供できる。As described in detail above, the high-frequency wiring board of the present invention can be applied to a case where microwaves and millimeter waves of 1 GHz or more, and even high-frequency signals of 60 GHz are transmitted to the wiring layer. Since the dielectric loss of the insulating substrate is remarkably low and can be fired at a low temperature of 1000 ° C. or less, a wiring layer made of a low-resistance metal such as copper can be formed, so that a high-frequency signal can be transmitted extremely well and without loss. In addition, since the insulating substrate has a high strength, even when the wiring substrate is handled or used under severe conditions, there is no disconnection due to cracks and the like, and a highly reliable wiring substrate can be provided.
【図１】本発明の高周波用配線基板を用いた高周波用パ
ッケージの一例を説明するための概略断面図である。FIG. 1 is a schematic cross-sectional view for explaining an example of a high-frequency package using a high-frequency wiring board of the present invention.
【図２】本発明の絶縁基板における焼結体の組織を説明
するための概略図である。FIG. 2 is a schematic diagram for explaining the structure of a sintered body in the insulating substrate of the present invention.
１ 高周波用パッケージ ２ 絶縁基板 ３ 蓋体 ４ キャビティ ５ 高周波素子 ６ 配線層 ７ アース層 ８、１０ マイクロストリップ線路 ９ 配線層 １１ スロット孔 ＳＰ スピネル型結晶相 Ｗ ウイレマイト型結晶相 Ｅ エンスタタイト型結晶相 Ｓ ＳｉＯ2 系結晶相 Ｇ 非晶質相DESCRIPTION OF SYMBOLS 1 High frequency package 2 Insulating substrate 3 Lid 4 Cavity 5 High frequency element 6 Wiring layer 7 Ground layer 8, 10 Microstrip line 9 Wiring layer 11 Slot hole SP Spinel type crystal phase W Willemite type crystal phase E Enstatite type crystal phase S SiO 2 crystal phase G Amorphous phase
Claims (6)
ＧＨｚ以上の高周波信号が伝送可能な配線層が配設され
てなる高周波用配線基板において、前記絶縁基板が、Ｓ
ｉＯ2 、Ａｌ2 Ｏ3 、ＭｇＯおよびＺｎＯを構成成分と
して含む複数の結晶相と、ＳｉＯ2 、またはＳｉＯ2 と
Ｂ2 Ｏ3 からなる非晶質相とを具備する焼結体からなる
ことを特徴とする高周波用配線基板。1. A frequency 1 on the surface or inside of an insulating substrate.
In a high-frequency wiring board provided with a wiring layer capable of transmitting high-frequency signals of GHz or higher,
a plurality of crystalline phase containing iO 2, Al 2 O 3, MgO and ZnO as a component, that a sintered body and a SiO 2, or consists of SiO 2 and B 2 O 3 amorphous phase Characteristic high-frequency wiring board.
びＡｌ2 Ｏ3 を含む結晶相と、少なくともＳｉＯ2 およ
びＺｎＯを含む結晶相と、少なくともＳｉＯ2およびＭ
ｇＯ相とを含むことを特徴とする請求項１記載の高周波
用配線基板。2. A crystal phase containing at least ZnO and Al 2 O 3 , a crystal phase containing at least SiO 2 and ZnO, and a crystal phase containing at least SiO 2 and M 2.
2. The high-frequency wiring board according to claim 1, comprising a gO phase.
含む結晶相が、スピネル型結晶相である請求項２記載の
高周波用配線基板。3. The high-frequency wiring board according to claim 2, wherein the crystal phase containing at least ZnO and Al 2 O 3 is a spinel crystal phase.
む結晶相が、ウイレマイト型結晶相である請求項２記載
の高周波用配線基板。4. The high-frequency wiring board according to claim 2, wherein the crystal phase containing at least SiO 2 and ZnO is a willemite-type crystal phase.
含む結晶相が、エンスタタイト型結晶相である請求項２
記載の高周波用配線基板。5. The crystal phase containing at least the SiO 2 and MgO phases is an enstatite type crystal phase.
The wiring board for high frequency described.
ストリップ線路、コプレーナ線路、誘電体導波管線路の
うちの少なくとも１種から構成され、前記絶縁基板と同
時焼成によって形成されたことを特徴とする請求項１記
載の高周波用配線基板。6. The wiring layer is formed of at least one of a strip line, a microstrip line, a coplanar line, and a dielectric waveguide line, and is formed by co-firing with the insulating substrate. 2. The high-frequency wiring board according to claim 1, wherein:
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7981197A JP3588224B2 (en) | 1997-03-31 | 1997-03-31 | High frequency wiring board |
| US09/049,312 US6120906A (en) | 1997-03-31 | 1998-03-27 | Insulated board for a wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7981197A JP3588224B2 (en) | 1997-03-31 | 1997-03-31 | High frequency wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10275963A true JPH10275963A (en) | 1998-10-13 |
| JP3588224B2 JP3588224B2 (en) | 2004-11-10 |
Family
ID=13700602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7981197A Expired - Fee Related JP3588224B2 (en) | 1997-03-31 | 1997-03-31 | High frequency wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3588224B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002053368A (en) * | 2000-04-27 | 2002-02-19 | Kyocera Corp | Porcelain excellent in high-frequency characteristic and its manufacturing method |
| KR100434415B1 (en) * | 2000-07-21 | 2004-06-04 | 가부시키가이샤 무라타 세이사쿠쇼 | Insulative ceramic compact |
| KR100434416B1 (en) * | 2000-07-21 | 2004-06-04 | 가부시키가이샤 무라타 세이사쿠쇼 | Insulating ceramic compact, ceramic multilayer substrate, and ceramic electronic device |
| JP2007158027A (en) * | 2005-12-05 | 2007-06-21 | Asahi Glass Co Ltd | Ceramic substrate with conductor layer, and method of manufacturing same |
| DE10120641B4 (en) * | 2000-04-27 | 2009-04-09 | Kyocera Corp. | Ceramics with very good high-frequency properties and process for their preparation |
| JP2014020998A (en) * | 2012-07-20 | 2014-02-03 | Denso Corp | Radar device |
| JP2014234341A (en) * | 2013-06-05 | 2014-12-15 | 日本電気硝子株式会社 | Glass member |
| JP2020500430A (en) * | 2016-10-17 | 2020-01-09 | トリルミナ コーポレーション | Consistency drive device for multibeam optoelectronic arrays |
-
1997
- 1997-03-31 JP JP7981197A patent/JP3588224B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002053368A (en) * | 2000-04-27 | 2002-02-19 | Kyocera Corp | Porcelain excellent in high-frequency characteristic and its manufacturing method |
| DE10120641B4 (en) * | 2000-04-27 | 2009-04-09 | Kyocera Corp. | Ceramics with very good high-frequency properties and process for their preparation |
| KR100434415B1 (en) * | 2000-07-21 | 2004-06-04 | 가부시키가이샤 무라타 세이사쿠쇼 | Insulative ceramic compact |
| KR100434416B1 (en) * | 2000-07-21 | 2004-06-04 | 가부시키가이샤 무라타 세이사쿠쇼 | Insulating ceramic compact, ceramic multilayer substrate, and ceramic electronic device |
| JP2007158027A (en) * | 2005-12-05 | 2007-06-21 | Asahi Glass Co Ltd | Ceramic substrate with conductor layer, and method of manufacturing same |
| JP4702021B2 (en) * | 2005-12-05 | 2011-06-15 | 旭硝子株式会社 | Ceramic substrate with conductor layer and method for producing the same |
| JP2014020998A (en) * | 2012-07-20 | 2014-02-03 | Denso Corp | Radar device |
| US9684073B2 (en) | 2012-07-20 | 2017-06-20 | Denso Corporation | Radar apparatus |
| JP2014234341A (en) * | 2013-06-05 | 2014-12-15 | 日本電気硝子株式会社 | Glass member |
| JP2020500430A (en) * | 2016-10-17 | 2020-01-09 | トリルミナ コーポレーション | Consistency drive device for multibeam optoelectronic arrays |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3588224B2 (en) | 2004-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3297569B2 (en) | Low temperature firing porcelain composition | |
| JP3793560B2 (en) | Low-temperature fired porcelain and manufacturing method thereof | |
| US6120906A (en) | Insulated board for a wiring board | |
| US6572955B2 (en) | Ceramics having excellent high-frequency characteristics and method of producing the same | |
| JP3588224B2 (en) | High frequency wiring board | |
| JP3793559B2 (en) | High frequency porcelain composition and high frequency porcelain | |
| JP4792167B2 (en) | Porcelain, manufacturing method thereof, and high-frequency wiring board | |
| JP3377898B2 (en) | Low temperature firing porcelain composition | |
| JP3441924B2 (en) | Wiring board and its mounting structure | |
| JP3865967B2 (en) | Porcelain and wiring board using the same | |
| JP3527818B2 (en) | Low-temperature firing porcelain and method of manufacturing the same | |
| JP3085667B2 (en) | High frequency porcelain composition, high frequency porcelain and method for producing the same | |
| JPH10297960A (en) | Ceramic composition baked at low temperature and production of porcelain baked at low temperature | |
| JP3441941B2 (en) | Wiring board and its mounting structure | |
| JP3556475B2 (en) | High frequency porcelain composition and method for producing high frequency porcelain | |
| JP3441950B2 (en) | Wiring board and its mounting structure | |
| JP3064273B2 (en) | High frequency porcelain | |
| JP3792355B2 (en) | High-strength ceramic sintered body, method for producing the same, and wiring board | |
| JP3401147B2 (en) | Low temperature firing porcelain composition | |
| JP2005015284A (en) | Low temperature-fired porcelain, its production method, and wiring board | |
| JP3663300B2 (en) | High frequency porcelain composition, high frequency porcelain and method for producing the same | |
| JP3610226B2 (en) | Wiring board and its mounting structure | |
| JPH09208298A (en) | Porcelain composition fired at a low temperature | |
| JP2005101095A (en) | Porcelain composition, porcelain, and its manufacturing method | |
| JP3793558B2 (en) | High frequency porcelain |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040316 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040517 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20040810 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040812 |
|
| R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080820 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080820 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090820 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090820 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100820 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100820 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110820 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110820 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120820 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130820 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |