JPH10273308A - Production of atomic monolayer carbon nanotube - Google Patents

Production of atomic monolayer carbon nanotube

Info

Publication number
JPH10273308A
JPH10273308A JP9093065A JP9306597A JPH10273308A JP H10273308 A JPH10273308 A JP H10273308A JP 9093065 A JP9093065 A JP 9093065A JP 9306597 A JP9306597 A JP 9306597A JP H10273308 A JPH10273308 A JP H10273308A
Authority
JP
Japan
Prior art keywords
carbon
diameter
carbon nanotube
nanotube
carbon rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9093065A
Other languages
Japanese (ja)
Other versions
JP3365475B2 (en
Inventor
Hirotsugu Achinami
洋次 阿知波
Yutaka Maniwa
豊 真庭
Hiromichi Kataura
弘道 片浦
Shinzo Suzuki
信三 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP09306597A priority Critical patent/JP3365475B2/en
Publication of JPH10273308A publication Critical patent/JPH10273308A/en
Application granted granted Critical
Publication of JP3365475B2 publication Critical patent/JP3365475B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain an atomic monolayer carbon nanotube having regulated fiber diameter by controlling the diameter of the nanotube by changing a surrounding temperature according to the correlation between the surrounding temperature of a carbon rod at an unirradiated part and the diameter of the carbon nanotube. SOLUTION: A carbon rod 2 obtained by firing a carbon powder such as graphite powder, and a catalyst metal such as Ni, Co, Rh and Pd, with a binder such as a graphite cement and phenol resin is inserted into a silica tube 6 arranged in an electric furnace 1. Ar gas is introduced into the silica tube from an Ar gas-introducing part 4, and the silica tube is evacuated from a vacuum pump evacuating part 5 to maintain the pressure so as to be 100-2,500 Torr. Further, a laser beam 3 having 11 μm-250 nm wave length and 100-2,000 mmJ /cm<2> energy density is irradiated while changing the surrounding temperature based on the correlation between the surrounding temperature of the carbon rod 2 at an unirradiated part and a diameter of the carbon nano tube to control the diameter of the nanotube.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、カーボンナノチュ
ーブの製造方法に係わるものである。本発明の製造方法
は、雰囲気温度又はカーボンロッド中の金属触媒種を変
えることで、単原子層のカーボンナノチューブの繊維径
をコントロールできる点が最大の特徴であり、繊維径が
制御された単原子層のカーボンナノチューブとして、エ
レクトロニクス分野等で好適に使用される。
[0001] The present invention relates to a method for producing carbon nanotubes. The production method of the present invention is characterized in that the fiber diameter of the carbon nanotube in the monoatomic layer can be controlled by changing the ambient temperature or the type of the metal catalyst in the carbon rod. As the carbon nanotube of the layer, it is suitably used in the field of electronics and the like.

【0002】[0002]

【従来の技術】カーボンナノチューブは1991年に発
見され(Nature,354,(1991)56)て
以来、1次元ワイヤ、触媒などの種々の潜在的な応用が
期待される新しい材料として期待されている。数個以上
の円筒状黒鉛層が同心円状に形成された通常のカーボン
ナノチューブは、円筒の大きさが一定ではなく、電気特
性や化学特性に大きなばらつきがあった。そこで、チュ
ーブの形状が単層に制御された単原子層カーボンナノチ
ューブの製造方法が特開平7−197325号公報で提
案されている。具体的には、アーク放電法によるカーボ
ンナノチューブの製造方法において、放電電極の一方に
炭素を、他方の電極に金属(Fe、Co、Ni等の遷移
金属)と炭素の混合物を用い、原料ガスに炭化水素を用
いることにより、単原子層カーボンナノチューブが製造
されている。
2. Description of the Related Art Since carbon nanotubes were discovered in 1991 (Nature, 354, (1991) 56), they are expected as new materials that are expected to have various potential applications such as one-dimensional wires and catalysts. . In a normal carbon nanotube in which several or more cylindrical graphite layers are formed concentrically, the size of the cylinder is not constant, and the electrical characteristics and the chemical characteristics vary greatly. Therefore, a method for producing a single atomic layer carbon nanotube in which the shape of the tube is controlled to a single layer has been proposed in JP-A-7-197325. Specifically, in the method for producing carbon nanotubes by the arc discharge method, carbon is used for one of the discharge electrodes, a mixture of metal (transition metal such as Fe, Co, Ni, etc.) and carbon is used for the other electrode, and the raw material gas is used as the source gas. The use of hydrocarbons has produced monolayer carbon nanotubes.

【0003】最近になり、Smalleyらのグループ
が、アーク放電法ではなく、レーザー蒸発法で、高収率
で単原子層カーボンナノチューブを製造している。具体
的には、触媒金属としてNi/Co=1/1の入った
(各1.2wt%)カーボンロッドを使い、電気炉内ダ
ブルレーザー蒸発法で、ロープ状単原子層カーボンナノ
チューブを非常に高い収率で得ている(A.Thess
etal.,Science 273(1996)4
83)。しかしながら、単原子層カーボンナノチューブ
の収率は向上しても、単原子層のカーボンナノチューブ
の径をコントロールすることはできなかった。
[0003] Recently, the group of Smallley et al. Manufactures single-atomic-wall carbon nanotubes in a high yield by a laser evaporation method instead of an arc discharge method. Specifically, using a carbon rod containing Ni / Co = 1/1 (1.2 wt% each) as a catalyst metal, and using a double laser evaporation method in an electric furnace, the rope-like single atomic layer carbon nanotube is extremely high. Obtained in yield (A. Thess
et al. , Science 273 (1996) 4
83). However, even though the yield of single-layer carbon nanotubes was improved, the diameter of single-layer carbon nanotubes could not be controlled.

【0004】[0004]

【発明が解決しようとする課題】そこで、本発明者は、
上記の課題を解決すべく鋭意検討した結果、カーボンナ
ノチューブのレーザー蒸発法による製造方法において、
非照射部のカーボンロッドの雰囲気温度又は触媒金属種
が、単原子層カーボンナノチューブの径と相関関係を有
することを見い出し、かかる関係に基づき、雰囲気温度
又は触媒金属種を変えることにより、単原子層カーボン
ナノチューブの径をコントロールすることができること
を見い出し本発明に到達した。
Therefore, the present inventor has proposed:
As a result of intensive studies to solve the above problems, in the method of manufacturing carbon nanotubes by laser evaporation method,
It has been found that the ambient temperature of the carbon rod in the non-irradiated portion or the catalytic metal species has a correlation with the diameter of the monoatomic carbon nanotube, and based on such a relationship, the ambient temperature or the catalytic metal species is changed to obtain the monoatomic layer. The present inventors have found that the diameter of the carbon nanotube can be controlled, and have reached the present invention.

【0005】[0005]

【課題を解決するための手段】即ち、本発明は、カーボ
ンロッドにレーザーを照射する単原子層カーボンナノチ
ューブのレーザー蒸発法による製造方法において、非照
射部のカーボンロッドの雰囲気温度とカーボンナノチュ
ーブの径の相関関係に基づき、該雰囲気温度を変えるこ
とにより、該ナノチューブの径をコントロールすること
を特徴とする単原子層カーボンナノチューブの製造方
法、あるいは、カーボンロッド中の触媒金属種とカーボ
ンナノチューブの径の相関関係に基づき、該触媒金属種
を変えることにより、該ナノチューブの径をコントロー
ルすることを特徴とする単原子層カーボンナノチューブ
の製造方法、及び上記いずれかの方法で製造された単原
子層カーボンナノチューブに存する。
That is, the present invention relates to a method for producing single atomic layer carbon nanotubes by irradiating a laser beam to a carbon rod by a laser evaporation method. Based on the correlation, the method for producing a single-layer carbon nanotube characterized by controlling the diameter of the nanotube by changing the ambient temperature, or the catalyst metal species in the carbon rod and the diameter of the carbon nanotube A method for producing a single-layer carbon nanotube, wherein the diameter of the nanotube is controlled by changing the catalytic metal species based on the correlation, and a single-layer carbon nanotube produced by any of the above methods Exists.

【0006】以下、本発明をより詳細に説明する。本発
明の最大の特徴は、カーボンナノチューブのレーザー蒸
発法による製造方法において、非照射部のカーボンロッ
ドの雰囲気温度あるいはカーボンロッド中の触媒金属種
を変えることにより、単原子層カーボンナノチューブの
繊維径をコントロールする点にある。
Hereinafter, the present invention will be described in more detail. The greatest feature of the present invention is that, in the method for producing carbon nanotubes by the laser evaporation method, the fiber diameter of the single-atomic-layer carbon nanotube is changed by changing the ambient temperature of the non-irradiated portion of the carbon rod or the type of catalytic metal in the carbon rod. The point is to control.

【0007】具体的には、カーボンナノチューブのレー
ザー蒸発法による製造方法において、非照射部のカーボ
ンロッドの雰囲気温度を下げるか、あるいは、カーボン
ロッド中の触媒金属を例えばNi/CoからRh/Pd
に変えることにより、単原子層カーボンナノチューブの
繊維径を小さくすることができる。本発明の製造方法
は、上記2つのパラメーターの組み合わせで、単原子層
カーボンナノチューブの繊維径を自由にコントロールで
きる画期的な製造方法である。
Specifically, in the method of manufacturing carbon nanotubes by the laser evaporation method, the ambient temperature of the carbon rod in the non-irradiated portion is reduced, or the catalyst metal in the carbon rod is changed from, for example, Ni / Co to Rh / Pd.
By changing to, the fiber diameter of the single-atomic-layer carbon nanotube can be reduced. The production method of the present invention is an epoch-making production method in which the fiber diameter of the monoatomic carbon nanotube can be freely controlled by a combination of the above two parameters.

【0008】図1に本発明の製造装置の概略図を示す。
本装置は、1:電気炉、2:カーボンロッド、3:Nd
−YAGレーザー532nm、4:Arガス導入部、
5:真空ポンプ排気部、6:石英管、7:真空チャンバ
ー、8:圧力計、9:バルブ、10:レンズから構成さ
れている。本発明で使用する不活性ガスとしては、Ar
が効果的であるが、これらのガス以外にも、He、N
e、Xe、Kr、Rnなどのガスを用いることができ
る。圧力は、100〜2500Torrが好ましい。特
にArの場合は、200〜600Torrが最適であ
り、He等の低分子量ガスの場合は、圧力を高くするこ
とにより、収率を維持することができる。
FIG. 1 shows a schematic view of a manufacturing apparatus according to the present invention.
This device is composed of 1: electric furnace, 2: carbon rod, 3: Nd
-YAG laser 532 nm, 4: Ar gas introduction part,
5: vacuum pump exhaust unit, 6: quartz tube, 7: vacuum chamber, 8: pressure gauge, 9: valve, 10: lens. The inert gas used in the present invention is Ar gas
Is effective, but in addition to these gases, He, N
Gases such as e, Xe, Kr, and Rn can be used. The pressure is preferably from 100 to 2500 Torr. Particularly, in the case of Ar, 200 to 600 Torr is optimal, and in the case of a low molecular weight gas such as He, the yield can be maintained by increasing the pressure.

【0009】本発明で使用するレーザーは、特に限定す
るものではないが、波長が11μm〜250nm範囲の
レーザーであれば良く、Nd−YAG、CO2 、エキシ
マレーザー等が好適に使用される。エネルギー密度は、
100〜2000mmJ/cm2 が好適である。レーザ
ー照射は連続でも製造できないわけではないが、パルス
発振させた方が収率の点が好ましい。これは連続照射し
た場合には、成長中のナノチューブにレーザーが照射さ
れ破壊されるためと推定される。
The laser used in the present invention is not particularly limited, but may be any laser having a wavelength in the range of 11 μm to 250 nm, and Nd-YAG, CO 2 , excimer laser and the like are preferably used. The energy density is
100-2000 mmJ / cm < 2 > is suitable. Although laser irradiation cannot be manufactured even if it is continuous, it is preferable to perform pulse oscillation in terms of the yield. This is presumed to be due to the fact that when the continuous irradiation is performed, the growing nanotube is irradiated with the laser and is destroyed.

【0010】本発明で使用するカーボンロッドは、炭素
と触媒金属からなる。カーボンロッドは常法によって製
造でき、例えばグラファイトパウダー等の市販の炭素粉
と触媒金属を、グラファイトセメントやフェノール樹脂
のようなバインダーと共に焼成することによって得るこ
とができる。
[0010] The carbon rod used in the present invention comprises carbon and a catalyst metal. The carbon rod can be manufactured by a conventional method, and can be obtained, for example, by firing a commercially available carbon powder such as graphite powder and a catalyst metal together with a binder such as graphite cement or a phenol resin.

【0011】カーボンロッド中の触媒金属としては、N
i、Co、Rh、Pdが好ましく、特に限定するもので
はないが、NiとCoを、Rh:Pdを混ぜたものや、
Ni、Co、Rhを単独で添加したものが好適に使用さ
れる。触媒金属を混ぜ合わせて使用する場合、混合比率
としては、特に限定するものではないが、収率の観点か
らは1:1が好ましい。もちろん所望のチューブ径を得
るために1:1以外の割合にすることは充分考えられ
る。なおPd単独では、単原子層カーボンナノチューブ
は生成しないので、Rhと適当な割合に混ぜて使用する
ことが好ましい。触媒金属の添加量は、各々0.05〜
2.0atomic%が好ましい。
The catalyst metal in the carbon rod is N
i, Co, Rh, and Pd are preferable, and there is no particular limitation. Ni and Co, a mixture of Rh: Pd,
Those to which Ni, Co, and Rh are independently added are preferably used. When the catalyst metals are mixed and used, the mixing ratio is not particularly limited, but is preferably 1: 1 from the viewpoint of yield. Of course, a ratio other than 1: 1 can be sufficiently considered to obtain a desired tube diameter. Since Pd alone does not produce single-layer carbon nanotubes, it is preferable to mix Pd with Rh at an appropriate ratio. The addition amount of the catalyst metal is 0.05 to
2.0 atomic% is preferable.

【0012】雰囲気温度は、好ましくは、600〜15
00℃であり、更に好ましくは、100〜1300℃で
ある。600℃以下及び1500℃以上では、カーボン
ナノチューブの収率が極端に低下し、現実的ではない。
同一金属触媒を用いた場合、非照射部のカーボンロッド
の雰囲気温度が低いほど、単原子層カーボンナノチュー
ブの繊維径は小さくなる。ここで非照射部とするのは、
照射部だとレーザー光の影響で温度が平衡に達しないか
らである。また、同一温度で生成させた場合、カーボン
ロッド中の触媒金属種をNi、Ni/Co、Co、R
h、Rh/Pdと変えると、その順に繊維径は小さくな
ることを見出した。
The ambient temperature is preferably from 600 to 15
The temperature is 00 ° C, more preferably 100 to 1300 ° C. At 600 ° C. or lower and 1500 ° C. or higher, the yield of carbon nanotubes extremely decreases, which is not practical.
When the same metal catalyst is used, the lower the ambient temperature of the carbon rod in the non-irradiated portion, the smaller the fiber diameter of the single-atom carbon nanotube. Here, the non-irradiated part is
This is because the temperature does not reach equilibrium due to the influence of the laser beam in the irradiation part. When produced at the same temperature, the catalyst metal species in the carbon rod is Ni, Ni / Co, Co, R
h and Rh / Pd, it was found that the fiber diameter became smaller in that order.

【0013】したがって、原子量の大きな触媒金属を用
いるか、雰囲気温度を低くすることにより、単原子層カ
ーボンナノチューブの繊維径を小さくすることができ
る。つまり、触媒金属種と雰囲気温度を変えることで、
単原子層カーボンナノチューブのチューブ径をコントロ
ールできるわけである。本発明の製造方法は、上記2つ
のパラメーターの組み合わせで、単原子層カーボンナノ
チューブの繊維径を自由にコントロールできる画期的な
製造方法であり、本発明の製造方法で得られた繊維径の
制御された単原子層カーボンナノチューブは、エレクト
ロニクス分野等で好適に使用される。
Therefore, by using a catalyst metal having a large atomic weight or lowering the ambient temperature, the fiber diameter of the single-atom carbon nanotube can be reduced. In other words, by changing the catalyst metal type and the ambient temperature,
That is, the tube diameter of the single-atomic-layer carbon nanotube can be controlled. The production method of the present invention is an epoch-making production method in which the fiber diameter of the single-atomic-wall carbon nanotube can be freely controlled by a combination of the above two parameters, and the control of the fiber diameter obtained by the production method of the present invention. The single atomic layer carbon nanotube thus obtained is suitably used in the field of electronics and the like.

【0014】[0014]

【実施例】以下、本発明を実施例により更に詳細に説明
するが、本発明は、その要旨を越えない限り、下記実施
例により限定されるものではない。 (実施例1)図1に装置の概略図を示す。グラファイト
粉((株)ニラコ製)及び、Ni/Coの金属粉
((株)ニラコ製)を混ぜ、グラファイトセメント
((株)ニラコ製)で固め、Ar雰囲気で1200℃に
て熱処理を施して、カーボンロッドを作製した。電気炉
中においた石英管内に、Ni/Co=1:1で、各0.
6atomic%添加したカーボンロッド(6mmφ×
30mm)を置き、Ar雰囲気とし、圧力を500To
rr、雰囲気温度を1200℃とした。波長532n
m、エネルギー密度300mj/cm2 、10Hzのパ
ルス光のNd−YAGレーザー(スペクトラフィジック
ス社製)をこのカーボンロッドにスポットサイズ6mm
φで照射した。管壁に付着した生成物を回収し、TEM
観察及び励起光源としてアルゴンイオンレーザー488
nm、20mWを用いラマン分光測定を実施した。図3
にTEM写真を示すが、単原子層カーボンナノチューブ
であることがわかる。ラマンスペクトルを図2に示す。
チューブの径を、Science vol.275 1
997 p187−191記載のラマン分光法によるピ
ーク位置とチューブ径の関係により見積り、チューブ径
の分布が11Å付近にピークをもつことがわかった。
EXAMPLES The present invention will be described in more detail with reference to the following Examples, which should not be construed as limiting the scope of the invention. (Embodiment 1) FIG. 1 shows a schematic view of the apparatus. A graphite powder (manufactured by Nilaco) and a metal powder of Ni / Co (manufactured by Nilaco) are mixed, solidified with graphite cement (manufactured by Nilaco), and heat-treated at 1200 ° C. in an Ar atmosphere. A carbon rod was produced. Ni / Co = 1: 1 in a quartz tube placed in an electric furnace.
6 atomic% added carbon rod (6mmφ ×
30mm), Ar atmosphere, and pressure of 500To
rr and the ambient temperature were 1200 ° C. Wavelength 532n
m, an energy density of 300 mj / cm 2 , and a pulsed Nd-YAG laser (manufactured by Spectra Physics Co., Ltd.) having a pulse size of 10 Hz and a spot size of 6 mm on this carbon rod.
Irradiated at φ. The product adhering to the tube wall is collected and TEM
Argon ion laser 488 as a light source for observation and excitation
Raman spectroscopy was performed using nm and 20 mW. FIG.
Fig. 2 shows a TEM photograph, which shows that the carbon nanotube is a single atomic layer carbon nanotube. The Raman spectrum is shown in FIG.
The diameter of the tube was determined according to Science vol. 275 1
Estimation was made based on the relationship between the peak position and the tube diameter by Raman spectroscopy described in 997 p187-191, and it was found that the tube diameter distribution had a peak near 11 °.

【0015】(実施例2)雰囲気温度を1000℃とし
た以外は、実施例1と同様にして、実験を行ったとこ
ろ、チューブ径の分布は、10Å付近がピークであるこ
とがわかった。 (実施例3)雰囲気温度を1300℃とした以外は、実
施例1と同様にして、実験を行ったところ、チューブ径
の分布は、13.5Å付近がピークであることがわかっ
た。
(Example 2) An experiment was conducted in the same manner as in Example 1 except that the atmosphere temperature was changed to 1000 ° C. As a result, it was found that the distribution of the tube diameter had a peak near 10 °. (Example 3) An experiment was conducted in the same manner as in Example 1 except that the ambient temperature was changed to 1300 ° C. As a result, it was found that the tube diameter distribution peaked at around 13.5 °.

【0016】(実施例4)触媒金属をRh/Pd=1:
1とし、各1.2atomic%添加したカーボンロッ
ドを用い、雰囲気温度を1000℃とした以外は、実施
例1と同様にして、実験を行ったところ、チューブ径の
分布は、7.8Å付近がピークであることがわかった。 (実施例5)雰囲気温度を1200℃とした以外は、実
施例4と同様にして、実験を行ったところ、チューブ径
の分布は、9.0Å付近がピークであることがわかっ
た。
(Example 4) Rh / Pd = 1:
The experiment was performed in the same manner as in Example 1 except that the carbon temperature was set to 1 and each of the carbon rods added at 1.2 atomic%, and the atmosphere temperature was set to 1000 ° C. It turned out to be a peak. (Example 5) An experiment was conducted in the same manner as in Example 4 except that the atmospheric temperature was set to 1200 ° C. As a result, it was found that the tube diameter distribution peaked at around 9.0 °.

【0017】(実施例6)雰囲気温度を1300℃とし
た以外は、実施例4と同様にして、実験を行ったとこ
ろ、チューブ径の分布は、11.0Å付近がピークであ
ることがわかった。 (実施例7)触媒金属をRhとし、0.6atomic
%添加したカーボンロッドを用い、雰囲気温度を120
0℃とした以外は、実施例1と同様にして、実験を行っ
たところ、チューブ径の分布は、10.5Å付近がピー
クであることがわかった。
Example 6 An experiment was conducted in the same manner as in Example 4 except that the atmosphere temperature was changed to 1300 ° C., and it was found that the distribution of the tube diameter had a peak near 11.0 °. . (Example 7) Assuming that the catalyst metal is Rh, 0.6 atomic
% Using a carbon rod with an ambient temperature of 120
An experiment was performed in the same manner as in Example 1 except that the temperature was set to 0 ° C., and it was found that the tube diameter distribution had a peak near 10.5 °.

【0018】[0018]

【発明の効果】上記特徴を有する本発明の製造方法で得
られた繊維径の制御された単原子層カーボンナノチュー
ブは、エレクトロニクス分野等で好適に使用され、多大
な工業的利益を提供するものである。
The monoatomic carbon nanotubes having a fiber diameter controlled and obtained by the production method of the present invention having the above characteristics are suitably used in the field of electronics and the like, and provide great industrial benefits. is there.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は本発明で用いたカーボンナノチューブの
製造装置を説明する図である。
FIG. 1 is a diagram illustrating an apparatus for producing carbon nanotubes used in the present invention.

【図2】図2は本発明の実施例の結果得られたカーボン
ナノチューブの直径の測定に用いたラマン分光の測定結
果を示す図である。
FIG. 2 is a diagram showing the results of Raman spectroscopy used for measuring the diameter of carbon nanotubes obtained as a result of an example of the present invention.

【図3】図3は実施例1で得られた単原子層カーボンナ
ノチューブの繊維形状を示す顕微鏡写真(TEM写真)
である。
FIG. 3 is a micrograph (TEM photograph) showing the fiber shape of the monoatomic carbon nanotube obtained in Example 1.
It is.

【符号の説明】[Explanation of symbols]

1 電気炉 2 カーボンロッド 3 Nd−YAGレーザー 4 Arガス導入部 5 真空ポンプ排気部 6 石英管 7 真空チャンバー 8 圧力計 9 バルブ 10 レンズ DESCRIPTION OF SYMBOLS 1 Electric furnace 2 Carbon rod 3 Nd-YAG laser 4 Ar gas introduction part 5 Vacuum pump exhaust part 6 Quartz tube 7 Vacuum chamber 8 Pressure gauge 9 Valve 10 Lens

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 カーボンロッドにレーザーを照射する、
単原子層カーボンナノチューブのレーザー蒸発法による
製造方法において、非照射部のカーボンロッドの雰囲気
温度とカーボンナノチューブの径の相関関係に基づき、
該雰囲気温度を変えることにより、該ナノチューブの径
をコントロールすることを特徴とする単原子層カーボン
ナノチューブの製造方法。
Irradiating a laser on a carbon rod;
In a method for producing a single-atomic-layer carbon nanotube by a laser evaporation method, based on a correlation between an ambient temperature of a carbon rod in a non-irradiated portion and a diameter of the carbon nanotube,
A method for producing a single-atom carbon nanotube, wherein the diameter of the nanotube is controlled by changing the ambient temperature.
【請求項2】 カーボンロッドにレーザーを照射する、
単原子層カーボンナノチューブのレーザー蒸発法による
製造方法において、カーボンロッド中の触媒金属種とカ
ーボンナノチューブの径の相関関係に基づき、該触媒金
属種を変えることにより、該ナノチューブの径をコント
ロールすることを特徴とする単原子層カーボンナノチュ
ーブの製造方法。
2. irradiating a laser to the carbon rod;
In a method for producing a single-atom carbon nanotube by a laser evaporation method, the diameter of the nanotube is controlled by changing the catalyst metal species based on the correlation between the catalyst metal species in the carbon rod and the diameter of the carbon nanotube. A method for producing a single atomic layer carbon nanotube, which is characterized by the following.
【請求項3】 請求項1又は2のいずれかに記載の製造
方法で得られた単原子層カーボンナノチューブ。
3. A monoatomic carbon nanotube obtained by the method according to claim 1.
JP09306597A 1997-03-27 1997-03-27 Method for producing monoatomic carbon nanotubes Expired - Fee Related JP3365475B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP09306597A JP3365475B2 (en) 1997-03-27 1997-03-27 Method for producing monoatomic carbon nanotubes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09306597A JP3365475B2 (en) 1997-03-27 1997-03-27 Method for producing monoatomic carbon nanotubes

Publications (2)

Publication Number Publication Date
JPH10273308A true JPH10273308A (en) 1998-10-13
JP3365475B2 JP3365475B2 (en) 2003-01-14

Family

ID=14072122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09306597A Expired - Fee Related JP3365475B2 (en) 1997-03-27 1997-03-27 Method for producing monoatomic carbon nanotubes

Country Status (1)

Country Link
JP (1) JP3365475B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001030689A1 (en) * 1999-10-28 2001-05-03 Centre National De La Recherche Scientifique (C.N.R.S.) Nanostructures, their applications and method for making them
WO2003004411A1 (en) * 2001-07-03 2003-01-16 Japan Science And Technology Corporation Method for preparing carbon nano-horn aggregate
KR100372332B1 (en) * 1999-06-11 2003-02-17 일진나노텍 주식회사 Massive synthesis method of purified carbon nanotubes vertically aligned on large-area substrate using the thermal chemical vapor deposition
KR100372333B1 (en) * 1999-07-27 2003-02-17 일진나노텍 주식회사 Method of synthesizing carbon nanotubes using low pressure chemical vapor deposition
KR100376197B1 (en) * 1999-06-15 2003-03-15 일진나노텍 주식회사 Low temperature synthesis of carbon nanotubes using metal catalyst layer for decompsing carbon source gas
WO2003068676A1 (en) * 2002-02-13 2003-08-21 Toudai Tlo, Ltd. Process for producing single-walled carbon nanotube, single-walled carbon nanotube, and composition containing single-walled carbon nanotube
JP2004244309A (en) * 2003-01-23 2004-09-02 Canon Inc Method of manufacturing nanocarbon material
WO2004113225A1 (en) * 2003-06-24 2004-12-29 Nec Corporation Nanocarbon-producing device
US6855659B1 (en) 1999-09-22 2005-02-15 Nec Corporation Manufacturing method of carbon nanotubes and laser irradiation target for the manufacture thereof
WO2005066072A1 (en) * 2004-01-06 2005-07-21 Kyoto University Carbon nanotube and method of purifying the same
JP2007098797A (en) * 2005-10-05 2007-04-19 Fuji Xerox Co Ltd Image recording method, image recorder and image recording medium
US7270795B2 (en) 2003-01-23 2007-09-18 Canon Kabushiki Kaisha Method for producing nano-carbon materials
WO2007125923A1 (en) 2006-04-24 2007-11-08 National Institute Of Advanced Industrial Science And Technology Single-walled carbon nanotube, carbon fiber aggregate containing the single-walled carbon nanotube, and method for production of the single-walled carbon nanotube or the carbon fiber aggregate
US7442358B2 (en) 2003-04-04 2008-10-28 Canon Kabushiki Kaisha Flaky carbonaceous particle and production method thereof
WO2010054301A2 (en) * 2008-11-10 2010-05-14 University Of Florida Research Foundation, Inc. Production of carbon nanostructures from functionalized fullerenes
JP4593816B2 (en) * 2001-03-27 2010-12-08 キヤノン株式会社 Electron emitting device, image forming apparatus, and method of manufacturing electron emitting device
US8444948B2 (en) 2011-02-18 2013-05-21 Kabushiki Kaisha Toshiba Graphite nano-carbon fiber and method of producing the same
US8557191B2 (en) 2008-08-08 2013-10-15 Kabushiki Kaisha Toshiba Nanocarbon producing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104860295A (en) * 2015-05-11 2015-08-26 苏州德生材料科技有限公司 Automatic high-purity carbon nano tube preparation device and method

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100372332B1 (en) * 1999-06-11 2003-02-17 일진나노텍 주식회사 Massive synthesis method of purified carbon nanotubes vertically aligned on large-area substrate using the thermal chemical vapor deposition
KR100376197B1 (en) * 1999-06-15 2003-03-15 일진나노텍 주식회사 Low temperature synthesis of carbon nanotubes using metal catalyst layer for decompsing carbon source gas
KR100372333B1 (en) * 1999-07-27 2003-02-17 일진나노텍 주식회사 Method of synthesizing carbon nanotubes using low pressure chemical vapor deposition
US6855659B1 (en) 1999-09-22 2005-02-15 Nec Corporation Manufacturing method of carbon nanotubes and laser irradiation target for the manufacture thereof
FR2800365A1 (en) * 1999-10-28 2001-05-04 Centre Nat Rech Scient PROCESS FOR OBTAINING NANOSTRUCTURES FROM COMPOUNDS HAVING A HEXAGONAL CRYSTALLINE FORM
WO2001030689A1 (en) * 1999-10-28 2001-05-03 Centre National De La Recherche Scientifique (C.N.R.S.) Nanostructures, their applications and method for making them
JP2003512192A (en) * 1999-10-28 2003-04-02 サントル ナショナル デ ラ ルシェルシュ シィアンティフィク (セ.エヌ.エール.エス.) Nanostructure, its application, and its manufacturing method
US6586093B1 (en) 1999-10-28 2003-07-01 Centre National De La Recherche Scientifique (C.N.R.S.) Nanostructures, their applications and method for making them
JP4593816B2 (en) * 2001-03-27 2010-12-08 キヤノン株式会社 Electron emitting device, image forming apparatus, and method of manufacturing electron emitting device
WO2003004411A1 (en) * 2001-07-03 2003-01-16 Japan Science And Technology Corporation Method for preparing carbon nano-horn aggregate
US8758716B2 (en) 2002-02-13 2014-06-24 Toudai Tlo, Ltd. Composition containing single-walled nanotubes
WO2003068676A1 (en) * 2002-02-13 2003-08-21 Toudai Tlo, Ltd. Process for producing single-walled carbon nanotube, single-walled carbon nanotube, and composition containing single-walled carbon nanotube
US8128900B2 (en) 2002-02-13 2012-03-06 Toudai Tlo, Ltd. Process for producing single-walled carbon nanotube, single-walled carbon nanotube, and composition containing single-walled carbon nanotube
JP2004244309A (en) * 2003-01-23 2004-09-02 Canon Inc Method of manufacturing nanocarbon material
JP4532913B2 (en) * 2003-01-23 2010-08-25 キヤノン株式会社 Method for producing nanocarbon material
US7270795B2 (en) 2003-01-23 2007-09-18 Canon Kabushiki Kaisha Method for producing nano-carbon materials
US7442358B2 (en) 2003-04-04 2008-10-28 Canon Kabushiki Kaisha Flaky carbonaceous particle and production method thereof
WO2004113225A1 (en) * 2003-06-24 2004-12-29 Nec Corporation Nanocarbon-producing device
JP2005220006A (en) * 2004-01-06 2005-08-18 Kyoto Univ Carbon nanotube and method of purifying the same
WO2005066072A1 (en) * 2004-01-06 2005-07-21 Kyoto University Carbon nanotube and method of purifying the same
JP2007098797A (en) * 2005-10-05 2007-04-19 Fuji Xerox Co Ltd Image recording method, image recorder and image recording medium
WO2007125923A1 (en) 2006-04-24 2007-11-08 National Institute Of Advanced Industrial Science And Technology Single-walled carbon nanotube, carbon fiber aggregate containing the single-walled carbon nanotube, and method for production of the single-walled carbon nanotube or the carbon fiber aggregate
US8557191B2 (en) 2008-08-08 2013-10-15 Kabushiki Kaisha Toshiba Nanocarbon producing apparatus
WO2010054301A2 (en) * 2008-11-10 2010-05-14 University Of Florida Research Foundation, Inc. Production of carbon nanostructures from functionalized fullerenes
WO2010054301A3 (en) * 2008-11-10 2010-07-29 University Of Florida Research Foundation, Inc. Production of carbon nanostructures from functionalized fullerenes
US8709217B2 (en) 2008-11-10 2014-04-29 University Of Florida Research Foundation, Inc. Production of carbon nanostructures from functionalized fullerenes
US8974644B2 (en) 2008-11-10 2015-03-10 University Of Florida Research Foundation, Inc. Production of carbon nanostructures from functionalized fullerenes
US8444948B2 (en) 2011-02-18 2013-05-21 Kabushiki Kaisha Toshiba Graphite nano-carbon fiber and method of producing the same

Also Published As

Publication number Publication date
JP3365475B2 (en) 2003-01-14

Similar Documents

Publication Publication Date Title
JP3365475B2 (en) Method for producing monoatomic carbon nanotubes
TWI400193B (en) Process for the production of carbon nanostructure
Arepalli Laser ablation process for single-walled carbon nanotube production
US6765949B2 (en) Carbon nanostructures and methods of preparation
JP3606232B2 (en) Carbon structure manufacturing apparatus and manufacturing method
JP2541434B2 (en) Carbon nano tube manufacturing method
Kanzow et al. Laser-assisted production of multi-walled carbon nanotubes from acetylene
US20070118938A1 (en) Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures
JP2002263496A (en) Catalyst composition, manufacturing method thereof and method of manufacturing carbon nanofiber
WO2005082528A1 (en) Catalyst structure and method for producing carbon nanotube using same
Harbec et al. Carbon nanotubes from the dissociation of C2Cl4 using a dc thermal plasma torch
US7501024B2 (en) Carbon nanohorn producing device and carbon nanohorn producing method
KR100468845B1 (en) Method of fabricating carbon nano tube
RU2305065C2 (en) Method of preparing carbon, metallic, and metallocarbon nanoparticles
JP2005350349A (en) Apparatus for manufacturing monolayer carbon nanotube
JP2005239481A (en) Metal occlusion carbon nanotube aggregate, its manufacturing method, metal occlusion carbon nanotube, metal nanowire, and its manufacturing method
JPWO2018155627A1 (en) Method for producing carbon nanohorn aggregate
JP5007513B2 (en) Carbon nanotube purification method and purification apparatus
US6613198B2 (en) Pulsed arc molecular beam process
RU2447019C2 (en) Method of producing carbon-containing nanotubes
JP2004035962A (en) Method of producing metal nanotube
JP7099522B2 (en) Continuous manufacturing method of fibrous carbon nanohorn aggregate
Huh et al. One-Pot Synthesis of Copper Nanoparticles Using Underwater Plasma
JP3941780B2 (en) Carbon nanohorn manufacturing apparatus and carbon nanohorn manufacturing method
RU2744089C1 (en) Method for producing stabilized linear carbon chains in a liquid

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081101

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081101

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091101

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101101

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111101

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121101

Year of fee payment: 10

LAPS Cancellation because of no payment of annual fees