JPH10261636A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH10261636A JPH10261636A JP9064505A JP6450597A JPH10261636A JP H10261636 A JPH10261636 A JP H10261636A JP 9064505 A JP9064505 A JP 9064505A JP 6450597 A JP6450597 A JP 6450597A JP H10261636 A JPH10261636 A JP H10261636A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bonding pad
- eutectic
- pad portion
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明が属する技術分野】本発明は、リード線接着用に
好適なボンディングパッド部を有する半導体装置の製造
方法に関する。The present invention relates to a method for manufacturing a semiconductor device having a bonding pad portion suitable for bonding lead wires.
【０００２】[0002]
【従来の技術】一般に、半導体装置の配線は、Ａ１層ま
たはＡｌ合金層の上部に金属シリサイドまたは金属ナイ
トライド層を有する積層構造である。Ａｌ層またはＡｌ
合金層の上部に金属シリサイドまたは金属ナイトライド
層を備える理由は以下の通りである。2. Description of the Related Art Generally, a wiring of a semiconductor device has a laminated structure having a metal silicide or a metal nitride layer on an A1 layer or an Al alloy layer. Al layer or Al
The reason for providing the metal silicide or metal nitride layer on the alloy layer is as follows.
【０００３】つまり、一般的にフォトリソグラフィー技
術を利用して配線を加工しようとする場合、マスクパタ
ーンの形成時に被加工膜の反射率が大きいと、ハレーシ
ョンと呼ばれるマスクパターンの欠陥を発生することが
ある。ハレーションの発生は配線の断線や細りを引き起
こし、半導体装置の性能や信頼性を低下させる。そこ
で、このハレーションを防止するために、配線の上面
に、低反射率の金属シリサイド層または金属ナイトライ
ド層をハレーション防止層として形成している。That is, in general, when processing wiring using photolithography technology, if the reflectance of a film to be processed is large at the time of forming a mask pattern, a mask pattern defect called halation may occur. is there. The occurrence of halation causes disconnection or thinning of the wiring, and lowers the performance and reliability of the semiconductor device. Therefore, in order to prevent this halation, a metal silicide layer or a metal nitride layer having a low reflectance is formed as an anti-halation layer on the upper surface of the wiring.
【０００４】しかしながら、前記金属シリサイド層およ
び金属ナイトライド層は、ボンディング材料との密着性
が悪いことや高抵抗であること等により、その上に直接
ボンディング材料が接続できない。そのため、配線形成
後からボンディングまでの間に、フォトリソグラフィー
工程およびエッチング工程を行って、ハレーション防止
層として形成されている金属シリサイド層または金属ナ
イトライド層を部分的に除去することにより、ボンディ
ングパッド部を形成している。However, the metal silicide layer and the metal nitride layer cannot be directly connected to the bonding material due to poor adhesion to the bonding material and high resistance. For this reason, a photolithography step and an etching step are performed between after the wiring is formed and before the bonding, and the metal silicide layer or the metal nitride layer formed as the antihalation layer is partially removed, so that the bonding pad portion is formed. Is formed.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このよ
うにして形成されたボンディングパット部に対するボン
ディングでは、必要とされるボンディングパワーが比較
的高く、ボンディングパット部とボンディング材料との
密着性の点において改善の余地があった。However, the bonding to the bonding pad portion formed in this manner requires a relatively high bonding power and improves the adhesion between the bonding pad portion and the bonding material. There was room for
【０００６】本発明は、このような従来技術の問題点に
着目してなされたものであり、前述のようにして形成さ
れたボンディングパット部のボンディング材料との密着
性を向上させることを課題とする。The present invention has been made in view of such problems of the prior art, and has as its object to improve the adhesion of a bonding pad formed as described above to a bonding material. I do.
【０００７】[0007]
【課題を解決するための手段】本発明者等は、上記課題
を解決するために鋭意検討した結果、従来の方法でボン
ディングパッド部を形成した場合、ボンディングパッド
部の表面は、アルミニウムと金属（金属シリサイドまた
は金属ナイトライドに含まれる金属）との共晶になって
いることを見いだして本発明を完成させた。The present inventors have conducted intensive studies to solve the above-mentioned problems. As a result, when a bonding pad portion is formed by a conventional method, the surface of the bonding pad portion is made of aluminum and metal ( The present invention was found to be eutectic with metal silicide or metal contained in metal nitride) and completed the present invention.
【０００８】すなわち、従来の方法では、図４（ａ）に
示すように、Ａ１層またはＡｌ合金層からなるアルミ配
線層１を形成した後、図４（ｂ）に示すように、アルミ
配線層１の上に、金属シリサイドまたは金属ナイトライ
ドからなるハレーション防止層２を形成するが、この時
点でアルミ配線層１とハレーション防止層２との間に共
晶層３が存在する。そのため、フォトリソグラフィ工程
によるフォトレジスト層４へのマスクパターン転写（図
４（ｃ））とその後のエッチング工程によってハレーシ
ョン防止層２に形成されたボンディングパッド部５は、
図４（ｄ）に示すように、共晶層３が表面に露出した状
態になる。That is, in the conventional method, after forming an aluminum wiring layer 1 made of an A1 layer or an Al alloy layer as shown in FIG. 4A, the aluminum wiring layer is formed as shown in FIG. An antihalation layer 2 made of a metal silicide or a metal nitride is formed on 1, and at this time, a eutectic layer 3 exists between the aluminum wiring layer 1 and the antihalation layer 2. Therefore, the bonding pad portion 5 formed on the halation prevention layer 2 by the transfer of the mask pattern to the photoresist layer 4 by the photolithography process (FIG. 4C) and the subsequent etching process
As shown in FIG. 4D, the eutectic layer 3 is exposed on the surface.
【０００９】この共晶は、アルミ配線層１のハレーショ
ン防止層２との境界にあるＡｌ結晶の粒界に、ハレーシ
ョン防止層２に含まれる金属（例えばＭｏ）が共存する
状態であり、このような共晶は、化学的に活性な状態に
あるＡｌ表面に金属シリサイド（例えばモリブデンシリ
サイド）等をスパッタリングすることにより生じる。こ
の共晶は、元素分折機能付透過型電子顕微鏡（ＴＥＭ−
ＥＤＸ）やオージェ分析によって確認でき、ボンディン
グパッド表面から約２０００Ａの深さまで分布してい
る。そして、この共晶層４の表面は、ＡｌおよびＡｌ合
金からなるアルミ配線層の表面と比較して、ボンディン
グ材料との密着性が悪い。This eutectic is a state in which the metal (for example, Mo) contained in the antihalation layer 2 coexists at the grain boundary of the Al crystal at the boundary between the aluminum wiring layer 1 and the antihalation layer 2. Such a eutectic is generated by sputtering metal silicide (for example, molybdenum silicide) or the like on an Al surface in a chemically active state. This eutectic is obtained by a transmission electron microscope (TEM-
It can be confirmed by EDX) or Auger analysis, and is distributed to a depth of about 2000 A from the surface of the bonding pad. The surface of the eutectic layer 4 has poor adhesion to the bonding material as compared with the surface of the aluminum wiring layer made of Al and an Al alloy.
【００１０】このような知見から、本発明は、ウエハ上
にアルミニウムまたはアルミニウム合金からなるアルミ
配線層を形成し、このアルミ配線層の上に金属シリサイ
ドまたは金属ナイトライドからなるハレーション防止層
を形成し、このハレーション防止層をエッチングしてボ
ンディングパット部を形成する半導体装置の製造方法に
おいて、ハレーション防止層をドライエッチングするこ
とによりボンディングパッド部を形成した後に、このボ
ンディングパッド部にアルカリ性処理液を作用させて、
当該ボンディングパッド部の共晶層を除去する共晶層除
去工程を行うことを特徴とする半導体装置の製造方法を
提供する。From the above findings, the present invention provides a method for forming an aluminum wiring layer made of aluminum or an aluminum alloy on a wafer, and forming an antihalation layer made of metal silicide or metal nitride on the aluminum wiring layer. In the method for manufacturing a semiconductor device in which the antihalation layer is etched to form a bonding pad portion, the bonding pad portion is formed by dry-etching the antihalation layer, and then an alkaline processing liquid is applied to the bonding pad portion. hand,
A method for manufacturing a semiconductor device, comprising performing a eutectic layer removing step of removing the eutectic layer of the bonding pad portion.
【００１１】前述のように、アルミ配線層とハレーショ
ン防止層との間の共晶層は、Ａｌ結晶の粒界にＭｏ等が
共存する状態であり、この共晶層にアルカリ性処理液が
作用すると、下記の（１）式により、アルミニウムはア
ルカリ性処理液に溶解するため、アルミニウムの粒界に
存在するＡｌ以外の金属もＡｌと一緒に除去される。As described above, the eutectic layer between the aluminum wiring layer and the antihalation layer is in a state in which Mo and the like coexist at the grain boundaries of the Al crystal, and when an alkaline processing solution acts on this eutectic layer. According to the following formula (1), since aluminum is dissolved in the alkaline treatment liquid, metals other than Al existing at the grain boundaries of aluminum are also removed together with Al.
【００１２】 Ａｌ3+＋３ＯＨ- →Ａｌ（ＯＨ）3 ‥‥（１） これにより、ボンディングパッド部の表面にアルミ配線
層が露出するため、ボンディング材料との密着性が向上
する。Al 3+ + 3OH − → Al (OH) 3 ‥‥ (1) Thereby, since the aluminum wiring layer is exposed on the surface of the bonding pad portion, the adhesion to the bonding material is improved.
【００１３】また、半導体装置の製造方法においては、
ドライエッチング工程の後にアニール工程を行うことが
一般的であり、前記共晶層は、このアニール工程によっ
て２００℃〜４５０℃に加熱され成長およぴ拡散する。
そのため、ハレーション防止層をドライエッチングした
後にアニール工程を行う場合には、前記共晶層除去工程
を前記アニール工程の前に行うことが好ましい。In the method for manufacturing a semiconductor device,
In general, an annealing step is performed after the dry etching step, and the eutectic layer is heated to 200 ° C. to 450 ° C. by this annealing step to grow and diffuse.
Therefore, when the annealing step is performed after the antihalation layer is dry-etched, the eutectic layer removing step is preferably performed before the annealing step.
【００１４】また、前記共晶層除去工程を明るいところ
で行うと、ｐｎ接合部の光起電力効果により、Ａ１とア
ルカリ性処理液との反応が加速され、ボンディングパッ
ド部が変色したり腐食したりすることがある。すなわ
ち、ｐｎ接合部に光が吸収されると、基礎励起によって
電子と正孔が生成する。そして、電子と正孔はそれぞれ
エネルギーの低い側へ流れようとするため、図２に示す
ように、ｎ型領域には電子ｅがＰ型領域には正孔ｈが蓄
積される。When the eutectic layer removing step is performed in a bright place, the reaction between A1 and the alkaline processing liquid is accelerated by the photovoltaic effect of the pn junction, and the bonding pad is discolored or corroded. Sometimes. That is, when light is absorbed by the pn junction, electrons and holes are generated by the fundamental excitation. Since the electrons and holes tend to flow to the lower energy sides, respectively, as shown in FIG. 2, electrons e are accumulated in the n-type region and holes h are accumulated in the P-type region.
【００１５】そのため、外部回路を接続すると、図３に
示すように、ｐ型側が正、ｎ型側が負である電池が形成
される。そして、陽極となるｐ型領域にＡｌが接続され
ると、下記の（２）式で表される電気分解反応が生じ、
ボンディングパッド部の表面のＡｌがアルカリ性処理液
６中に溶解するため、変色や腐食を生じる。Therefore, when an external circuit is connected, a battery having a positive p-type side and a negative n-type side is formed as shown in FIG. When Al is connected to the p-type region serving as the anode, an electrolysis reaction represented by the following equation (2) occurs,
Since Al on the surface of the bonding pad is dissolved in the alkaline processing liquid 6, discoloration and corrosion occur.
【００１６】Ａｌ→Ａｌ3+＋３ｅ- ‥‥（２） ここで、Ｓｉのバンドギャップの値は約１．ｌｅＶであ
るため、前記共晶層除去工程を、波長１１００ｎｍ以下
の光が入らない環境下で行うことにより、理論的には光
起電力を０にして、前記電気分解反応が生じないように
することができるため、ボンディングパッド部の変色や
腐食が防止できる。Al → Al 3+ + 3e − ‥‥ (2) Here, the value of the band gap of Si is about 1. Since it is leV, by performing the eutectic layer removing step in an environment where light having a wavelength of 1100 nm or less does not enter, the photovoltaic voltage is theoretically set to 0 to prevent the electrolysis reaction from occurring. Therefore, discoloration and corrosion of the bonding pad portion can be prevented.
【００１７】しかしながら、波長１１００ｎｍ以下の光
が入らない環境で人間が作業することは実用上困難であ
るため、前記共晶層除去工程を暗室の環境下で行うこと
により、ｐｎ接合部に吸収される光量を低減して、前記
電気分解反応を抑制することができる。これにより、ボ
ンディングパッド部の変色や腐食が抑制できる。ここ
で、暗室の環境下とは、例えば通常の写真現像用の暗室
内を示し、このような暗室内で処理を行うか、またはア
ルカリ性処理液を作用させる装置内を前記暗室と同じ環
境となるようにして、前記共晶層除去工程を行う。However, since it is practically difficult for humans to work in an environment where light having a wavelength of 1100 nm or less does not enter, by performing the eutectic layer removing step in a dark room environment, the eutectic layer is absorbed by the pn junction. By reducing the amount of light, the electrolysis reaction can be suppressed. Thereby, discoloration and corrosion of the bonding pad portion can be suppressed. Here, the environment of the dark room refers to, for example, a dark room for normal photographic development, and processing in such a dark room, or the inside of an apparatus in which an alkaline processing solution is applied has the same environment as the dark room. Thus, the eutectic layer removing step is performed.
【００１８】なお、本発明で使用するアルカリ性処理液
としては、例えば、テトラメチルアンモニウムハイドラ
イド（ＴＭＡＨ）水溶液、アンモニア水、またはモノメ
チルアミン、モノエチルアミン、モノブチルアミン等の
ようなモノアルキルアミンの水溶液、またはトリメチル
アミン、ジメチルモノメチルアミン、モノメチルジメチ
ルアミン、トリエチルアミン、メチルエチルブチルアミ
ン等のようなトリアルキルアミンの水溶液、または水酸
化ナトリウム、水酸化カリウム等のようなアルカリ金属
の水酸化物の水溶液、もしくはこれらの混合物が挙げら
れ、これらの水溶液および混合物に有機溶媒が混合され
ているものであってもよい。The alkaline processing liquid used in the present invention includes, for example, an aqueous solution of tetramethylammonium hydride (TMAH), aqueous ammonia, or an aqueous solution of a monoalkylamine such as monomethylamine, monoethylamine, monobutylamine, or the like. An aqueous solution of a trialkylamine such as trimethylamine, dimethylmonomethylamine, monomethyldimethylamine, triethylamine, methylethylbutylamine or the like, or an aqueous solution of an alkali metal hydroxide such as sodium hydroxide or potassium hydroxide, or a mixture thereof The aqueous solution and the mixture thereof may be mixed with an organic solvent.
【００１９】このなかで好ましいものは、ＴＭＡＨ水溶
夜、アンモニア水、モノアルキルアミンの水溶液、また
はトリアルキルアミンの水溶液であり、最も好ましいも
のはＴＭＡＨ溶液またはアンモニア水である。Among them, preferred are TMAH aqueous solution, aqueous ammonia, aqueous solution of monoalkylamine or aqueous solution of trialkylamine, and most preferred is TMAH solution or aqueous ammonia.
【００２０】[0020]
【発明の実施の形態】以下、本発明の実施形態につい
て、具体的な実施例を用いて説明する。 ［実施例１］図１に示すように、（ａ）ウエハ上にアル
ミ配線層１として、Ａｌ−０．５％Ｃｕ−１．０％Ｓｉ
合金層を形成し、（ｂ）その上にハレーション防止層２
としてモリブデンシリサイド層を形成した。このサンプ
ルをＴＥＭ−ＥＤＸにかけて両層の界面部分を観察した
ところ、Ａ１とＭｏとの共晶層３が存在していた。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described using specific examples. [Example 1] As shown in FIG. 1, (a) Al-0.5% Cu-1.0% Si
Forming an alloy layer, and (b) an antihalation layer 2 thereon
Was formed as a molybdenum silicide layer. When this sample was subjected to TEM-EDX to observe the interface between the two layers, the eutectic layer 3 of A1 and Mo was present.
【００２１】このサンプルに対して、（ｃ）フォトレジ
スト層４にマスクパターンを転写するフォトリソグラフ
ィ工程、およびフォトレジスト層４をマスクとしたドラ
イエッチング工程を行うことによって、（ｄ）ハレーシ
ョン防止層２にボンディングパッド部５を形成した。By subjecting this sample to (c) a photolithography step of transferring a mask pattern to the photoresist layer 4 and a dry etching step using the photoresist layer 4 as a mask, (d) an antihalation layer 2 Then, a bonding pad portion 5 was formed.
【００２２】次に、（ｅ）写真現像用の一般的な暗室
で、アルカリ性処理液として用意した２．４体積％ＴＭ
ＡＨ水溶液６中に、１０秒間、３０秒間、６０秒間浸漬
した後水洗する共晶層除去工程を行った。この共晶層除
去工程によって、ボンディングパッド部５にアルカリ性
処理液が浸透し、共晶層３のＡｌとその粒界に存在する
Ｍｏ等がアルカリ性処理液に溶解する。これにより、
（ｆ）ボンディングパッド部５の共晶層３が除去され
て、アルミ配線層１のＡｌがボンディングパッド部５の
表面に露出した状態になる。Next, (e) 2.4 vol% TM prepared as an alkaline processing solution in a general dark room for photographic development.
A eutectic layer removing step of immersing in the AH aqueous solution 6 for 10 seconds, 30 seconds, and 60 seconds and then washing with water was performed. In the eutectic layer removing step, the alkaline processing liquid permeates the bonding pad portion 5, and Al of the eutectic layer 3 and Mo and the like existing in the grain boundaries are dissolved in the alkaline processing liquid. This allows
(F) The eutectic layer 3 of the bonding pad portion 5 is removed, and Al of the aluminum wiring layer 1 is exposed on the surface of the bonding pad portion 5.
【００２３】その後、超音波法により金のワイヤーボン
ディングを実施したところ、全数１０００個がボンディ
ングされるのに必要なボンディングパワー（相対値）
は、浸漬時間が１０秒間のもので２５、３０秒間のもの
で２０、６０秒間のもので１５であった。なお、前述の
共晶層除去工程を行わない場合には、ボンディングパワ
ーを３０以上に上げないと全数１０００個のボンディン
グがなされなかった。After that, when gold wire bonding was carried out by the ultrasonic method, the bonding power (relative value) required for bonding all 1000 wires was obtained.
Was 25 for 30 seconds, 20 for 30 seconds, and 15 for 60 seconds. When the above-mentioned eutectic layer removing step was not performed, the bonding power was not increased to 30 or more, and a total of 1,000 pieces were not bonded.
【００２４】ボンディングパワーが低くてもボンディン
グが可能であることはボンディングパッド部の表面状態
が良好である（ボンディング材料との密着性が高い）こ
とを意味し、２．４体積％ＴＭＡＨ水溶液に１０秒間以
上浸漬することにより、共晶層除去工程の効果が発揮さ
れていることが分かる。 ［実施例２］（ｅ）の共晶層除去工程において、アルカ
リ性処理液として２．４％ＴＭＡＨ水溶液に代えて０．
０ｌｍｏｌ／ｌアンモニア水を用いた以外は、前記実施
例１と同様にして、ボンディングパッド部５の形成と金
のワイヤーボンディングを行った。The fact that the bonding is possible even when the bonding power is low means that the surface condition of the bonding pad portion is good (high adhesion to the bonding material), and 10% of a 2.4% by volume TMAH aqueous solution is used. It can be seen that the effect of the eutectic layer removing step is exhibited by immersion for at least two seconds. [Example 2] In the eutectic layer removing step of (e), the alkaline treatment liquid was replaced with a 2.4% TMAH aqueous solution to obtain a 0.1% aqueous solution.
The formation of the bonding pad portion 5 and the gold wire bonding were performed in the same manner as in Example 1 except that 0 lmol / l aqueous ammonia was used.
【００２５】その結果、全数１０００個がボンディング
されるのに必要なボンディングパワー（相対値）は、浸
漬時間が１０秒間のもので２７、３０秒間のもので２
３、６０秒間のもので１８であった。 ［実施例３］ハレーション防止層２のエッチング後であ
って（ｅ）の共晶層除去工程を行う前に、４２０℃での
水素アニールを行った以外は、前記実施例１と同様にし
て、ボンディングパッド部５の形成と金のワイヤーボン
ディングを行った。As a result, the bonding power (relative value) required for bonding all 1,000 pieces is 27 when the immersion time is 10 seconds and 2 when the immersion time is 30 seconds.
It was 18 for 3,60 seconds. Example 3 In the same manner as in Example 1 except that hydrogen annealing at 420 ° C. was performed after the etching of the antihalation layer 2 and before performing the eutectic layer removing step (e), The formation of the bonding pad portion 5 and the gold wire bonding were performed.
【００２６】その結果、全数１０００個がボンディング
されるのに必要なボンディングパワー（相対値）は、浸
漬時間が１０秒間のもので２７、３０秒間のもので２
３、６０秒間のもので１８であった。 ［実施例４］（ｅ）の共晶層除去工程を行った後に、４
２０℃での水素アニールを行った以外は、前記実施例１
と同様にして、ボンディングパッド部５の形成と金のワ
イヤーボンディングを行った。As a result, the bonding power (relative value) required to bond all the 1000 pieces is 27 when the immersion time is 10 seconds and 2 when the immersion time is 30 seconds.
It was 18 for 3,60 seconds. Example 4 After performing the eutectic layer removing step of (e),
Example 1 except that hydrogen annealing at 20 ° C. was performed.
In the same manner as described above, formation of the bonding pad portion 5 and gold wire bonding were performed.
【００２７】その結果、全数１０００個がボンディング
されるのに必要なボンディングパワー（相対値）は、浸
漬時間が１０秒間のもので２５、３０秒間のもので２
０、６０秒間のもので１５であった。As a result, the bonding power (relative value) required for bonding a total of 1000 pieces is 2 for 25 seconds for immersion time of 10 seconds and 2 for 30 seconds for immersion time.
It was 15 for 0 and 60 seconds.
【００２８】これらの実施例から分かるように、アルカ
リ性処理液に浸漬する共晶層除去工程により、ボンディ
ングパッド部とボンディング材料との密着性は向上す
る。そして、この効果は、例えば２．４％ＴＭＡＨ水溶
液および０．０ｌｍｏｌ／ｌアンモニア水へ１０秒間以
上浸漬することで容易に得られる。As can be seen from these examples, the adhesion between the bonding pad portion and the bonding material is improved by the eutectic layer removing step of dipping in the alkaline processing liquid. This effect can be easily obtained by, for example, immersing in a 2.4% TMAH aqueous solution and 0.01 mol / l aqueous ammonia for 10 seconds or more.
【００２９】また、実施例３と実施例４との比較によ
り、水素アニール工程を行う場合には、共晶層除去工程
を水素アニール工程の前に行った方が、ボンディングパ
ッド部とボンディング材料との密着性向上の効果が高い
ことが分かる。In comparison with the third embodiment and the fourth embodiment, when the hydrogen annealing step is performed, it is better to perform the eutectic layer removing step before the hydrogen annealing step, because the bonding pad portion and the bonding material can be reduced. It can be seen that the effect of improving the adhesion is high.
【００３０】また、前記各実施例では、共晶層除去工程
を暗室で行ったため、ボンディングパッド部の表面に変
色や腐食は生じなかった。なお、本発明の方法は、共晶
層除去工程を暗室で行うことに限定されず、通常の明る
さの室内で行ってもよいが、暗室で行った方がボンディ
ングパッド部の表面に変色や腐食が生じ難いため好まし
い。また、この共晶層除去工程は、波長１１００ｎｍ以
下の光が入らない環境下で行うと、理論的にボンディン
グパッド部の表面に変色や腐食が生じないためさらに好
ましい。In each of the above embodiments, since the eutectic layer removing step was performed in a dark room, no discoloration or corrosion occurred on the surface of the bonding pad portion. Note that the method of the present invention is not limited to performing the eutectic layer removing step in a dark room, and may be performed in a room of normal brightness. This is preferable because corrosion hardly occurs. The eutectic layer removal step is more preferably performed in an environment where light having a wavelength of 1100 nm or less does not enter, because the surface of the bonding pad portion theoretically does not undergo discoloration or corrosion.
【００３１】また、前記各実施例では、共晶層除去工程
を、アルカリ性処理液中に所定時間浸漬させた後に水洗
することで行っているが、アルカリ処理液をボンディン
グパッド部５の上にスピンコートした後に水洗すること
で行っても良い。In each of the above embodiments, the eutectic layer removing step is performed by immersing the eutectic layer in the alkaline processing liquid for a predetermined time and then washing with water. It may be performed by washing with water after coating.
【００３２】なお、前記各実施例では、ハレーション防
止層２をモリブデンシリサイトで形成しているが、ハレ
ーション防止層２はこれに限定されず、金属ナイトライ
ドである窒化チタン素や、その他のハレーション防止層
２としての効果がある金属シリサイトおよび金属ナイト
ライドであっても、前記と同様の効果が得られる。In each of the above embodiments, the antihalation layer 2 is formed of molybdenum silicide. However, the antihalation layer 2 is not limited to this. Even with metal silicide and metal nitride having the effect as the prevention layer 2, the same effects as described above can be obtained.
【００３３】[0033]
【発明の効果】以上説明したように、本発明の方法によ
れば、共晶層除去工程を行うことにより、ボンディング
パッド部の表面とボンディング材料との密着性が向上す
るため、ボンディングパワーを低く抑えることができ
る。As described above, according to the method of the present invention, the adhesion between the surface of the bonding pad portion and the bonding material is improved by performing the eutectic layer removing step. Can be suppressed.
【００３４】特に、請求項２によれば、共晶層がアニー
ル工程によって成長およぴ拡散する前に除去されるた
め、共晶層除去工程による共晶層の除去が容易に行われ
る。特に、請求項３によれば、共晶層除去工程によりボ
ンディングパッド部に変色や腐食が全く生じないように
することができる。In particular, according to the second aspect, since the eutectic layer is removed before growing and diffusing in the annealing step, the eutectic layer can be easily removed in the eutectic layer removing step. In particular, according to the third aspect, it is possible to prevent discoloration or corrosion from occurring in the bonding pad portion by the eutectic layer removing step.
【００３５】特に、請求項４によれば、共晶層除去工程
によりボンディングパッド部に変色や腐食を生じ難くす
ることができる。In particular, according to the fourth aspect, the discoloration and corrosion of the bonding pad portion can be made less likely to occur in the eutectic layer removing step.
【図１】ハレーション防止層にボンディングパット部を
形成する本発明の方法の一例を示す工程図であり、
（ａ）はアルミ配線層の形成工程後のウエハを、（ｂ）
はハレーション防止層形成工程後のウエハを、（ｃ）は
フォトリソグラフィ工程後のウエハを、（ｄ）はエッチ
ング工程後のウエハを、（ｅ）は共晶層除去工程を、
（ｆ）は共晶層除去工程後のウエハを、それぞれ示して
いる。FIG. 1 is a process chart showing an example of a method of the present invention for forming a bonding pad portion on an antihalation layer,
(A) shows the wafer after the aluminum wiring layer forming step, (b)
Is the wafer after the anti-halation layer forming step, (c) is the wafer after the photolithography step, (d) is the wafer after the etching step, (e) is the eutectic layer removing step,
(F) shows the wafer after the eutectic layer removing step, respectively.
【図２】共晶層除去工程におけるｐｎ接合部の光起電力
効果を示す説明図である。FIG. 2 is an explanatory diagram showing a photovoltaic effect of a pn junction in a eutectic layer removing step.
【図３】前記光起電力効果による等価回路を示す概略図
である。FIG. 3 is a schematic diagram showing an equivalent circuit based on the photovoltaic effect.
【図４】ハレーション防止層にボンディングパット部を
形成する従来の方法を示す工程図であり、（ａ）はアル
ミ配線層の形成工程後のウエハを、（ｂ）はハレーショ
ン防止層形成工程後のウエハを、（ｃ）はフォトリソグ
ラフィ工程後のウエハを、（ｄ）はエッチング工程後の
ウエハをそれぞれ示している。4A and 4B are process diagrams showing a conventional method of forming a bonding pad portion on an antihalation layer, wherein FIG. 4A shows a wafer after an aluminum wiring layer forming process and FIG. 4B shows a wafer after an antihalation layer forming process. (C) shows the wafer after the photolithography step, and (d) shows the wafer after the etching step.
１ アルミ配線層 ２ ハレーション防止層 ３ 共晶層 ４ フォトレジスト層 ５ ボンディングパッド部 ６ アルカリ性処理液 DESCRIPTION OF SYMBOLS 1 Aluminum wiring layer 2 Antihalation layer 3 Eutectic layer 4 Photoresist layer 5 Bonding pad part 6 Alkaline processing liquid
Claims (4)
ウム合金からなるアルミ配線層を形成し、このアルミ配
線層の上に金属シリサイドまたは金属ナイトライドから
なるハレーション防止層を形成し、このハレーション防
止層をエッチングしてボンディングパット部を形成する
半導体装置の製造方法において、 ハレーション防止層をドライエッチングすることにより
ボンディングパッド部を形成した後に、このボンディン
グパッド部にアルカリ性処理液を作用させて、当該ボン
ディングパッド部の共晶層を除去する共晶層除去工程を
行うことを特徴とする半導体装置の製造方法。An aluminum wiring layer made of aluminum or an aluminum alloy is formed on a wafer, an antihalation layer made of metal silicide or metal nitride is formed on the aluminum wiring layer, and the antihalation layer is etched. In a method of manufacturing a semiconductor device in which a bonding pad portion is formed by forming a bonding pad portion, an antihalation layer is dry-etched to form a bonding pad portion, and then an alkaline processing solution is applied to the bonding pad portion to form a bonding pad portion. A method for manufacturing a semiconductor device, comprising: performing a eutectic layer removing step of removing a crystal layer.
した後にアニール工程を行う請求項１記載の半導体装置
の製造方法において、前記共晶層除去工程は前記アニー
ル工程の前に行うことを特徴とする半導体装置の製造方
法。2. The method for manufacturing a semiconductor device according to claim 1, wherein the annealing step is performed after the antihalation layer is dry-etched, wherein the eutectic layer removing step is performed before the annealing step. Manufacturing method.
ｍ以下の光が入らない環境下で行うことを特徴とする請
求項１または２に記載の半導体装置の製造方法。3. The eutectic layer removing step, wherein the wavelength is 1100 n
The method according to claim 1, wherein the method is performed in an environment where light of m or less does not enter.
うことを特徴とする請求項１または２に記載の半導体装
置の製造方法。4. The method according to claim 1, wherein the eutectic layer removing step is performed in a dark room environment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06450597A JP3485752B2 (en) | 1997-03-18 | 1997-03-18 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06450597A JP3485752B2 (en) | 1997-03-18 | 1997-03-18 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10261636A true JPH10261636A (en) | 1998-09-29 |
| JP3485752B2 JP3485752B2 (en) | 2004-01-13 |
Family
ID=13260137
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06450597A Expired - Fee Related JP3485752B2 (en) | 1997-03-18 | 1997-03-18 | Method for manufacturing semiconductor device |
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| Country | Link |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01302724A (en) * | 1988-02-03 | 1989-12-06 | Matsushita Electron Corp | Manufacture of semiconductor device |
| JPH0349231A (en) * | 1989-07-17 | 1991-03-04 | Sony Corp | Manufacture of semiconductor device |
| JPH04731A (en) * | 1989-01-27 | 1992-01-06 | Nec Corp | Semiconductor device and manufacture thereof |
| JPH08144075A (en) * | 1994-11-18 | 1996-06-04 | Mitsubishi Electric Corp | Removal of foreign matter on metal and device therefor |
| JPH08186121A (en) * | 1994-12-27 | 1996-07-16 | Nkk Corp | Method for forming wiring |
-
1997
- 1997-03-18 JP JP06450597A patent/JP3485752B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01302724A (en) * | 1988-02-03 | 1989-12-06 | Matsushita Electron Corp | Manufacture of semiconductor device |
| JPH04731A (en) * | 1989-01-27 | 1992-01-06 | Nec Corp | Semiconductor device and manufacture thereof |
| JPH0349231A (en) * | 1989-07-17 | 1991-03-04 | Sony Corp | Manufacture of semiconductor device |
| JPH08144075A (en) * | 1994-11-18 | 1996-06-04 | Mitsubishi Electric Corp | Removal of foreign matter on metal and device therefor |
| JPH08186121A (en) * | 1994-12-27 | 1996-07-16 | Nkk Corp | Method for forming wiring |
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| Publication number | Publication date |
|---|---|
| JP3485752B2 (en) | 2004-01-13 |
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