JPH10255710A - Charged particle beam applying device - Google Patents
Charged particle beam applying deviceInfo
- Publication number
- JPH10255710A JPH10255710A JP10116460A JP11646098A JPH10255710A JP H10255710 A JPH10255710 A JP H10255710A JP 10116460 A JP10116460 A JP 10116460A JP 11646098 A JP11646098 A JP 11646098A JP H10255710 A JPH10255710 A JP H10255710A
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- sample
- particle beam
- objective lens
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title claims abstract description 62
- 238000010894 electron beam technology Methods 0.000 claims abstract description 30
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 11
- 230000001133 acceleration Effects 0.000 abstract description 10
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 11
- 230000004075 alteration Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、走査形荷電粒子顕微鏡
及びその類似装置に係り、特に低加速領域において高分
解能でかつ二次電子の高検出効率に好適な荷電粒子光学
系に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning charged particle microscope and similar devices, and more particularly, to a charged particle optical system having high resolution in a low acceleration range and suitable for high secondary electron detection efficiency.
【０００２】[0002]
【従来の技術】走査形電子顕微鏡の分解能を向上させる
ために、特開昭６１−２９４７４６号に記載されている
ような光学系が用いられている。すなわち、輝度が高
く、エネルギ幅の小さな電界放射形（ＦＥ）電子銃と、
レンズの内部に試料を配置して収差を極力小さくしたイ
ンレンズ形対物レンズとを組合わせたものである。この
ような光学系においても低加速領域においては分解能は
低下する。2. Description of the Related Art In order to improve the resolution of a scanning electron microscope, an optical system as described in JP-A-61-294746 is used. That is, a field emission (FE) electron gun having a high brightness and a small energy width;
This is a combination of an in-lens type objective lens in which a sample is arranged inside a lens and aberration is minimized. Even in such an optical system, the resolution is reduced in the low acceleration region.
【０００３】一方、色収差を低減するために、特公昭６
３−３４５８８に記載されているような光学系が提案さ
れている。On the other hand, in order to reduce chromatic aberration, Japanese Patent Publication No.
An optical system as described in 3-34588 has been proposed.
【０００４】この光学系は、電子線が試料を照射する直
前まで高加速電圧とし、試料照射時に減速して低加速電
圧化するものである。この場合、レンズ通過時の電子線
のエネルギが高いので、レンズ収差を小さくできる。す
なわち、高分解能化が図れる。This optical system has a high accelerating voltage until just before an electron beam irradiates a sample, and decelerates to a low accelerating voltage when irradiating the sample. In this case, since the energy of the electron beam when passing through the lens is high, lens aberration can be reduced. That is, high resolution can be achieved.
【０００５】以上の観点から、低加速領域で従来以上の
高分解能を得るためには、上記両者の光学系を組合せれ
ば可能となる。すなわち、試料はレンズの内部に配置
し、この試料に負の電圧を印加して減速すればよい。From the above viewpoints, it is possible to obtain higher resolution than before in the low acceleration region by combining the above two optical systems. That is, the sample may be placed inside the lens, and a negative voltage may be applied to the sample to reduce the speed.
【０００６】ただ、この場合問題となるのは二次電子の
検出である。試料がレンズの外部にある従来の場合に
は、特公昭６３−３４５８８に示されているように、一
次電子線の減速電界で二時電子が加速されるまでに二次
電子検出器の電界で二次電子を検出するように構成すれ
ばよかった。しかし、試料をレンズの内部に配置したイ
ンレンズ形では、レンズの磁界が強いためにこの磁界に
二時電子が強く束縛されるばかりでなく、二次電子検出
器をレンズの内部に配置できないという問題が生じる。However, the problem in this case is the detection of secondary electrons. In the conventional case where the sample is outside the lens, as shown in JP-B-63-34588, the electric field of the secondary electron detector is used until the secondary electrons are accelerated by the deceleration electric field of the primary electron beam. It should have been configured to detect secondary electrons. However, in the in-lens type where the sample is placed inside the lens, the magnetic field of the lens is so strong that not only the two-time electrons are strongly bound by this magnetic field, but also that the secondary electron detector cannot be placed inside the lens. Problems arise.
【０００７】また、一次電子線と二次電子とを分離する
ことについては特開昭６２−３１９３３号に磁界のみで
分離することが開示されていた。[0007] Japanese Patent Application Laid-Open No. Sho 62-31933 discloses that a primary electron beam and a secondary electron are separated only by a magnetic field.
【０００８】[0008]
【発明が解決しようとする課題】本発明の目的は、低加
速領域で高分解能化を図り、かつ二次電子の高検出感度
が得られる電子光学系を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an electron optical system capable of achieving high resolution in a low acceleration region and obtaining high sensitivity for detecting secondary electrons.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するする
構成は荷電粒子源と、試料をその内部に設置して前記荷
電粒子源から発射された第１の荷電粒子線を絞って試料
に照射する対物レンズと、前記第１の荷電粒子線を減速
するとともに前記試料から発生する第２の荷電粒子を加
速する減速手段と、減速手段で加速された第２の荷電粒
子を偏向する偏向器と、対物レンズより荷電粒子源側に
配置され偏向器で偏向された第２の荷電粒子を検出する
検出器とから成る。In order to achieve the above object, a charged particle source and a sample are installed inside the charged particle source and a first charged particle beam emitted from the charged particle source is focused on the sample. An objective lens, a decelerating unit for decelerating the first charged particle beam and accelerating a second charged particle generated from the sample, and a deflector for deflecting the second charged particle accelerated by the decelerating unit. And a detector which is disposed closer to the charged particle source than the objective lens and detects the second charged particles deflected by the deflector.
【００１０】更に具体的には、低加速電圧で高分解能を
得るためには、試料をレンズの内部に配置したインレン
ズ形でかつこの試料に負の電圧を印加して一次電子線を
減速させればよいことはすでに述べた。この光学系で、
二次電子の高検出効率化を図るために、一次電子線の減
速電界で加速された二次電子をレンズ通過後検出器の方
に偏向させればよい。ただこの場合、一次電子線には影
響しないように二次電子のみを検出器の方に偏向する必
要がある。そのためには、電界（Ｅ）と磁界（Ｂ）とを
直行させたいわゆるＥ×Ｂ形のフィルタを用いれば可能
となる。More specifically, in order to obtain a high resolution with a low accelerating voltage, the primary electron beam is decelerated by applying a negative voltage to the sample in an in-lens type in which the sample is disposed inside a lens and applying a negative voltage to the sample. We have already mentioned what to do. With this optical system,
In order to increase the detection efficiency of secondary electrons, secondary electrons accelerated by the deceleration electric field of the primary electron beam may be deflected to the detector after passing through the lens. However, in this case, only the secondary electrons need to be deflected to the detector so as not to affect the primary electron beam. This can be achieved by using a so-called E × B-type filter in which an electric field (E) and a magnetic field (B) are perpendicular to each other.
【００１１】[0011]
【作用】まず、試料照射の直前に電子線の減速を行え
ば、低加速電圧でも高分解能が得られることは従来技術
からも分かる。First, it can be understood from the prior art that if the electron beam is decelerated immediately before the sample irradiation, a high resolution can be obtained even at a low accelerating voltage.
【００１２】一方、二次電子検出に関しては、Ｅ×Ｂ形
のフィルタを試料と検出器との間に用いているので、一
次電子線を直進するようにしてやれば、エネルギの異な
る二次電子は自然に偏向されることになる。すなわち、
図５に示すように電子線２の加速電圧Ｖａにたいして、
次式を満足するようにＥとＢを印加すれば、電子線２の
軌道に影響を与えない。On the other hand, regarding secondary electron detection, since an E × B type filter is used between the sample and the detector, if the primary electron beam is made to go straight, the secondary electrons having different energies can be detected. You will be naturally deflected. That is,
As shown in FIG. 5, with respect to the acceleration voltage Va of the electron beam 2,
If E and B are applied so as to satisfy the following expression, the trajectory of the electron beam 2 is not affected.
【００１３】[0013]
【数１】 (Equation 1)
【００１４】この時、検出すべき二次電子８のエネルギ
は減速電圧ＶRでありかつ電子線２と方向が逆であるの
で、二次電子８の偏向角θは、[0014] At this time, the energy to be detected secondary electrons 8 is decelerated a voltage V R and the electron beam 2 and the direction is opposite, the deflection angle θ of the secondary electrons 8,
【００１５】[0015]
【数２】 (Equation 2)
【００１６】となる。## EQU1 ##
【００１７】この偏向方向を検出器の方向と一致させて
おけば、二次電子は検出器に向かって進むので、検出効
率の向上が図れることになる。If this deflection direction is made to coincide with the direction of the detector, the secondary electrons travel toward the detector, so that the detection efficiency can be improved.
【００１８】[0018]
【実施例】本発明の一実施例を図１により説明する。FIG. 1 shows an embodiment of the present invention.
【００１９】電子銃１からでた電子線２は、幾つかのレ
ンズ（本実施例では加速レンズ３、コンデンサレンズ
４、対物レンズ５）により細く絞られて試料６上を照射
する。この電子線２は偏向器７により試料６上で二次元
的に走査される。また、試料６からでてきた二次電子８
は、二次電子検出器９により検出されて映像信号とな
る。The electron beam 2 emitted from the electron gun 1 is narrowed down by a number of lenses (in this embodiment, an acceleration lens 3, a condenser lens 4, and an objective lens 5) to irradiate the sample 6. The electron beam 2 is two-dimensionally scanned on the sample 6 by the deflector 7. Also, secondary electrons 8 coming out of sample 6
Is detected by the secondary electron detector 9 and becomes a video signal.
【００２０】ここで、試料６は電子線２を減速するため
に負の電圧ＶRが印加されている。このとき、出てきた
二次電子はこの減速電圧ＶRにより逆に加速され、検出
器９の電界のみでは十分に検出器９の方に偏向できなく
なる。Here, a negative voltage V R is applied to the sample 6 to decelerate the electron beam 2. At this time, the emitted secondary electrons are accelerated by the deceleration voltage V R , and cannot be sufficiently deflected toward the detector 9 only by the electric field of the detector 9.
【００２１】そこで、出てきた二次電子８を検出器９の
方に偏向するために偏向器を配置すればよいが、電子線
２の軌道に影響のないように電界Ｅと磁界Ｂとを直交さ
せたいわゆるＥ×Ｂ形のフィルタ１０を対物レンズ５と
検出器９との間に配置している。このとき、（１）式の
ようにＥとＢを印加すれば、電子線２の軌道には影響を
与えずに二次電子８のみを検出器の方に偏向でき、検出
効率の向上が図れる。Therefore, a deflector may be arranged to deflect the emitted secondary electrons 8 toward the detector 9. However, the electric field E and the magnetic field B are changed so as not to affect the trajectory of the electron beam 2. An orthogonal so-called E × B filter 10 is arranged between the objective lens 5 and the detector 9. At this time, if E and B are applied as in the expression (1), only the secondary electrons 8 can be deflected to the detector without affecting the trajectory of the electron beam 2, and the detection efficiency can be improved. .
【００２２】ただ、この場合、フィルタ１０による色収
差が問題になる。この色収差による偏向角βは、However, in this case, chromatic aberration caused by the filter 10 becomes a problem. The deflection angle β due to this chromatic aberration is
【００２３】[0023]
【数３】 (Equation 3)
【００２４】で表わされる。ここで、Δγは電子線２の
エネルギ幅である。## EQU2 ## Here, Δγ is the energy width of the electron beam 2.
【００２５】すなわち、図２に示すようにこの色収差に
より物点１２でＳβの拡がりを持つことになり、対物レ
ンズの倍率をＭとすると試料上ではＭＳβの拡がりを生
ずる。具体的数値の典型的な一例を示すと、θ＝３０
°、Δγ＝０.３ｅＶ、Ｖ0＝１ｋＶ、としてＶRに対す
るβは図３に示すものとなる。この図からβを大きく見
積もって５×１０-5とし、Ｓ＝２００ｍｍ，Ｍ＝１／５
０とすると、０.２μｍの拡がりとなる。この値は、電
子線２の所望の値（〜ｎｍ）より非常に大きい。That is, as shown in FIG. 2, this chromatic aberration causes the spread of Sβ at the object point 12, and when the magnification of the objective lens is M, the spread of MSβ occurs on the sample. As a typical example of specific numerical values, θ = 30
°, Δγ = 0.3eV, V 0 = 1kV, β for V R as is as shown in FIG. From this figure, β is largely estimated to be 5 × 10 −5 , S = 200 mm, M = 1/5
If it is set to 0, the spread will be 0.2 μm. This value is much larger than the desired value (〜 nm) of the electron beam 2.
【００２６】そこで、本発明では図４ならびに図１に示
すように、Ｅ×Ｂ形のフィルタ１１を配置してこの色収
差を自己消去できるようにした。すなわち、図４から分
かるようにΔγのエネルギが拡がりを持つ電子線２があ
たかも物点１２の一点から出たかのようになるようにフ
ィルタ１１を動作させる。このフィルタ１１の偏向角
β′は、Therefore, in the present invention, as shown in FIG. 4 and FIG. 1, an E × B type filter 11 is arranged so that this chromatic aberration can be self-erased. That is, as can be seen from FIG. 4, the filter 11 is operated such that the electron beam 2 having the energy of Δγ spreads as if it came out of one point of the object point 12. The deflection angle β ′ of this filter 11 is
【００２７】[0027]
【数４】 (Equation 4)
【００２８】とすればよい。[0028]
【００２９】以上により、電子線２の径を増大させるこ
となく、二次電子８のみを検出器９の方に偏向すること
が可能となる。すなわち、低加速領域でも高分解能でか
つ二次電子の高検出効率が得られることになる。As described above, it is possible to deflect only the secondary electrons 8 toward the detector 9 without increasing the diameter of the electron beam 2. That is, high resolution and high detection efficiency of secondary electrons can be obtained even in a low acceleration region.
【００３０】図１に示す本発明を実施した結果のごく一
例を以下に示す。フィルタ１１を物点１２とフィルタ１
０とのほぼ中間に配置して電界Ｅと磁界Ｂとの作用長を
約２０ｍｍとなるように構成し、Ｖ0＝１ｋＶと固定に
してＶR＝０〜９００Ｖと変化させた。このとき、フィ
ルタ１０、１１のそれぞれのＥとＢの強さをＥ＝０〜２
５Ｖ／ｍｍ，０〜５０Ｖ／ｍｍ，Ｂ＝０〜１４ガウス
（Gauss)，０〜２８GaussとＶRに連動させて変化させた
ところ、４〜６ｎｍの高分解能が実現できた。One example of the result of implementing the present invention shown in FIG. 1 is shown below. Filter 11 is the object point 12 and filter 1
It was arranged at about halfway between 0 and 0 so that the action length of the electric field E and the magnetic field B was about 20 mm. V 0 = 1 kV was fixed and V R was changed from 0 to 900 V. At this time, the strengths of E and B of the filters 10 and 11 are set to E = 0 to 2
5V / mm, 0~50V / mm, B = 0~14 Gauss (Gauss), was varied in conjunction to 0~28Gauss and V R, high resolution 4~6nm was realized.
【００３１】本発明は、１ｋＶ以下の低加速電圧でｎｍ
オーダの分解能を得ることを目的になされたため、フィ
ルタを２段にしたが、目的によっては１段で構成しても
二次電子の高検出効率化は可能であることは、本実施例
で述べた通りである。According to the present invention, at a low accelerating voltage of 1 kV or less, nm
Although the filter is provided in two stages for the purpose of obtaining the resolution of the order, it has been described in this embodiment that depending on the purpose, it is possible to improve the detection efficiency of the secondary electrons even with a single stage. As expected.
【００３２】また、本実施例では試料がレンズの内部に
配置したが、レンズの外側に配置された構成の光学系に
たいしても実施することができる。なおこの場合、二次
電子検出器は試料と対物レンズとの間にあってもよい
し、図１のように対物レンズの上側にあってもよいこと
はいうまでもない。要は、試料と二次電子検出器との間
にＥ×Ｂ形のフィルタがあれば実現できる。In this embodiment, the sample is arranged inside the lens. However, the present invention can be applied to an optical system having a structure arranged outside the lens. In this case, it goes without saying that the secondary electron detector may be located between the sample and the objective lens, or may be located above the objective lens as shown in FIG. In short, it can be realized if there is an E × B type filter between the sample and the secondary electron detector.
【００３３】さらに、本発明は走査形電子顕微鏡に対し
て述べたが、これに限ることなく類似の電子線応用装置
一般に適用できるし、さらにイオン線のような荷電粒子
線応用装置一般に適用できることは言うまでもない。た
だ、正の電荷を持っている荷電粒子線の場合には、減速
電圧は正の値にする必要がある。Furthermore, the present invention has been described with respect to a scanning electron microscope. However, the present invention is not limited to this, but can be applied to similar electron beam application devices in general, and further to general charged particle beam application devices such as ion beams. Needless to say. However, in the case of a charged particle beam having a positive charge, the deceleration voltage needs to be a positive value.
【００３４】[0034]
【発明の効果】本発明によれば、低加速領域でも荷電粒
子線径を増大させることなく二次荷電粒子を検出器の方
に偏向することが可能となるので、高分解能でかつ二次
荷電粒子の高検出効率が得られる効果がある。According to the present invention, the secondary charged particles can be deflected toward the detector without increasing the charged particle diameter even in the low acceleration region, so that the secondary charged particles can be highly resolved and the secondary charged particles can be deflected. There is an effect that a high particle detection efficiency can be obtained.
【図１】本発明の一実施例を示す荷電粒子光学系の縦断
面図。FIG. 1 is a longitudinal sectional view of a charged particle optical system according to an embodiment of the present invention.
【図２】Ｅ×Ｂ形フィルタの色収差に関する説明図。FIG. 2 is a diagram illustrating chromatic aberration of an E × B filter.
【図３】Ｅ×Ｂ形フィルタの色収差により生じる偏向角
と試料に印加した減速電圧との関係曲線図。FIG. 3 is a graph showing a relationship between a deflection angle caused by chromatic aberration of an E × B filter and a deceleration voltage applied to a sample.
【図４】フィルタの色収差を自己打消しさせるための基
本光学系の縦断面図。FIG. 4 is a longitudinal sectional view of a basic optical system for self-cancelling chromatic aberration of a filter.
【図５】Ｅ×Ｂ形フィルタによる一次電子線と二次電子
の軌道を示す説明図である。FIG. 5 is an explanatory diagram showing trajectories of primary electron beams and secondary electrons by an E × B filter.
１…電子銃、２…電子線、３…加速レンズ、４…コンデ
ンサレンズ、５…対物レンズ、６…試料、７…偏向器、
８…二次電子、９…二次電子検出器、１０，１１…Ｅ×
Ｂ形フィルタ、１２…物点。REFERENCE SIGNS LIST 1 electron gun 2 electron beam 3 acceleration lens 4 condenser lens 5 objective lens 6 sample 7 deflector
8 secondary electron, 9 secondary electron detector, 10, 11 Ex
B-type filter, 12 ... object point.
Claims (8)
前記荷電粒子源から発射された第１の荷電粒子線を絞っ
て試料に照射する対物レンズ手段と、前記第１の荷電粒
子線を減速するとともに前記試料から発生する第２の荷
電粒子を加速する減速手段と、前記減速手段で加速され
た前記第２の荷電粒子を偏向する偏向手段と、前記対物
レンズより前記荷電粒子源側に配置され前記偏向手段で
偏向された前記第２の荷電粒子を検出する検出手段とを
具備したことを特徴とする荷電粒子線応用装置。1. A charged particle source, an objective lens means for placing a sample therein, squeezing a first charged particle beam emitted from the charged particle source, and irradiating the sample with the first charged particle beam; Decelerating means for decelerating a line and accelerating a second charged particle generated from the sample; deflecting means for deflecting the second charged particle accelerated by the decelerating means; and a charged particle source from the objective lens. And a detecting means for detecting the second charged particles deflected by the deflecting means on a side of the charged particle beam application apparatus.
前記荷電粒子源から発射された第１の荷電粒子線を絞っ
て試料に照射する対物レンズ手段と、前記第１の荷電粒
子線を減速するとともに前記試料から発生する第２の荷
電粒子を加速する減速手段と、前記減速手段で加速され
た前記第２の荷電粒子を偏向する偏向手段と、前記減速
手段より前記荷電粒子源側に配置され前記偏向手段で偏
向された前記第２の荷電粒子を検出する検出手段とを具
備したことを特徴とする荷電粒子線応用装置。2. A charged particle source, an objective lens means for setting a sample therein, and squeezing a first charged particle beam emitted from the charged particle source to irradiate the sample with the first charged particle beam; Decelerating means for decelerating a line and accelerating second charged particles generated from the sample; deflecting means for deflecting the second charged particles accelerated by the decelerating means; And a detecting means for detecting the second charged particles deflected by the deflecting means on a side of the charged particle beam application apparatus.
前記荷電粒子源から発射された第１の荷電粒子線を絞っ
て試料に照射する対物レンズ手段と、前記第１の荷電粒
子線を減速するとともに前記試料から発生する第２の荷
電粒子を加速する減速手段と、前記減速手段より前記荷
電粒子源側に配置され前記減速手段で加速された前記第
２の荷電粒子を偏向する偏向手段と、前記対物レンズよ
り前記荷電粒子源側に配置され前記偏向手段で偏向され
た前記第２の荷電粒子を検出する検出手段とを具備した
ことを特徴とする荷電粒子線応用装置。3. A charged particle source, objective lens means for setting a sample therein, and squeezing a first charged particle beam emitted from the charged particle source to irradiate the sample with the charged particle source; Decelerating means for decelerating the line and accelerating the second charged particles generated from the sample; and deflecting the second charged particles which are arranged on the charged particle source side of the decelerating means and accelerated by the decelerating means. A charged particle beam application apparatus, comprising: a deflecting unit; and a detecting unit that is disposed closer to the charged particle source than the objective lens and detects the second charged particle deflected by the deflecting unit.
あり、第２の荷電粒子が二次荷電粒子であることを特徴
とする請求項１から３のいずれか記載の荷電粒子線応用
装置。4. The charged particle beam according to claim 1, wherein the first charged particle beam is a primary charged particle beam, and the second charged particle is a secondary charged particle beam. Applied equipment.
ら試料へ向う電子線でありと、第２の荷電粒子は前記試
料から前記荷電粒子源へ向う電子線であることを特徴す
る請求項１から４のいずれか記載の荷電粒子線応用装
置。5. The method according to claim 1, wherein the first charged particle beam is an electron beam directed from the charged particle source to the sample, and the second charged particle is an electron beam directed from the sample to the charged particle source. The charged particle beam application device according to claim 1.
た手段からなることを特徴する請求項１から５のいずれ
か記載の荷電粒子線応用装置。6. The charged particle beam application apparatus according to claim 1, wherein said deflecting means comprises a combination of an electric field and a magnetic field.
て前記電界と磁界が交叉することを特徴する請求項６記
載の荷電粒子線応用装置。7. The charged particle beam application apparatus according to claim 6, wherein the electric field and the magnetic field intersect as a combination of the electric field and the magnetic field.
を特徴する請求項１から７のいずれか記載の荷電粒子線
応用装置。8. The charged particle beam application apparatus according to claim 1, wherein said deflecting means is an E × B filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10116460A JP3006581B2 (en) | 1998-04-27 | 1998-04-27 | Charged particle beam application equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10116460A JP3006581B2 (en) | 1998-04-27 | 1998-04-27 | Charged particle beam application equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29452788A Division JP2821153B2 (en) | 1988-11-24 | 1988-11-24 | Charged particle beam application equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11151135A Division JP3031378B2 (en) | 1999-05-31 | 1999-05-31 | Charged particle beam application equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10255710A true JPH10255710A (en) | 1998-09-25 |
| JP3006581B2 JP3006581B2 (en) | 2000-02-07 |
Family
ID=14687672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10116460A Expired - Lifetime JP3006581B2 (en) | 1998-04-27 | 1998-04-27 | Charged particle beam application equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3006581B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001148227A (en) * | 1999-11-12 | 2001-05-29 | Advantest Corp | Polarization device for separating two particle beams |
| JP2002532844A (en) * | 1998-12-17 | 2002-10-02 | フィリップス エレクトロン オプティクス ビー ヴィ | Particle optics including Auger electron detection |
| US7035197B2 (en) | 2000-03-14 | 2006-04-25 | Matsushita Electric Industrial Co., Ltd. | Disk drive including a balancer |
-
1998
- 1998-04-27 JP JP10116460A patent/JP3006581B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002532844A (en) * | 1998-12-17 | 2002-10-02 | フィリップス エレクトロン オプティクス ビー ヴィ | Particle optics including Auger electron detection |
| JP2001148227A (en) * | 1999-11-12 | 2001-05-29 | Advantest Corp | Polarization device for separating two particle beams |
| US7035197B2 (en) | 2000-03-14 | 2006-04-25 | Matsushita Electric Industrial Co., Ltd. | Disk drive including a balancer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3006581B2 (en) | 2000-02-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2821153B2 (en) | Charged particle beam application equipment | |
| US7544937B2 (en) | Charged particle beam device for high spatial resolution and multiple perspective imaging | |
| US6674075B2 (en) | Charged particle beam apparatus and method for inspecting samples | |
| JP4287549B2 (en) | Particle beam equipment | |
| TW201021077A (en) | An electron beam apparatus | |
| JPH0286036A (en) | Ion micro-analyzer | |
| US7851755B2 (en) | Apparatus for detecting backscattered electrons in a beam apparatus | |
| US6232601B1 (en) | Dynamically compensated objective lens-detection device and method | |
| JP3006581B2 (en) | Charged particle beam application equipment | |
| JP3862344B2 (en) | Electrostatic lens | |
| JPH05174768A (en) | Scanning electron microscope of environment control type | |
| JP3031378B2 (en) | Charged particle beam application equipment | |
| JP3139484B2 (en) | Charged particle beam microscopy | |
| JP3225961B2 (en) | Charged particle beam application equipment | |
| JP3137115B2 (en) | Charged particle beam microscopy method and charged particle beam application device | |
| JP2993873B2 (en) | Charged particle beam application equipment and electron beam application equipment | |
| JP2993873B6 (en) | Charged particle beam application device and electron beam application device | |
| US20110139978A1 (en) | Charged particle beam device, method of operating a charged particle beam device | |
| JP2001256914A (en) | Charged particle beam application device | |
| JPH0349142A (en) | Scanning type electron microscope and similar device thereof | |
| JPH0864163A (en) | Charged particle beam device | |
| JP3101141B2 (en) | Electron beam equipment | |
| JP4283843B2 (en) | Mapping electron microscope with reduced geometric aberration and space charge effect | |
| JPH09274881A (en) | Scanning electron microscope | |
| JP2000182557A (en) | Charged particle beam device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071126 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081126 Year of fee payment: 9 |
|
| EXPY | Cancellation because of completion of term |