JPH10251099A - Production of lithium tetraborate single crystal - Google Patents
Production of lithium tetraborate single crystalInfo
- Publication number
- JPH10251099A JPH10251099A JP5924197A JP5924197A JPH10251099A JP H10251099 A JPH10251099 A JP H10251099A JP 5924197 A JP5924197 A JP 5924197A JP 5924197 A JP5924197 A JP 5924197A JP H10251099 A JPH10251099 A JP H10251099A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- lithium tetraborate
- raw material
- tetraborate single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、四ほう酸リチウム
の単結晶の製造方法に関し、特に表面弾性波デバイス用
基板材料として有用である四ほう酸リチウムの製造方法
に関するものである。The present invention relates to a method for producing a single crystal of lithium tetraborate, and more particularly to a method for producing lithium tetraborate useful as a substrate material for a surface acoustic wave device.
【0002】[0002]
【従来の技術】従来、表面弾性波デバイス用基板材料と
して、ニオブ酸リチウム、タンタル酸リチウム、水晶、
四ほう酸リチウムなどが実用化されている。これらの単
結晶の中で、四ほう酸リチウムは、電気機械結合係数が
比較的大きく、且つ室温で非常に小さい遅延時間の温度
係数を有していることから、移動体通信機器のフィルタ
ーとして有用な材料とされている。2. Description of the Related Art Conventionally, as substrate materials for surface acoustic wave devices, lithium niobate, lithium tantalate, quartz,
Lithium tetraborate and the like have been put to practical use. Among these single crystals, lithium tetraborate is useful as a filter for mobile communication devices because it has a relatively large electromechanical coupling coefficient and a very small delay time temperature coefficient at room temperature. Material.
【0003】四ほう酸リチウム単結晶の育成方法として
は、垂直ブリッジマン法もしくはチョコラルスキー法に
より、四ほう酸リチウム単結晶を融液から成長させる方
法が従来から知られている。As a method of growing a lithium tetraborate single crystal, a method of growing a lithium tetraborate single crystal from a melt by the vertical Bridgman method or the Czochralski method has been conventionally known.
【0004】このうちチョコラルスキー法は、原料をル
ツボに入れ、加熱融解させ、その融液に種結晶を接触さ
せ、これを回転させながら徐々に引き上げることにより
結晶成長を行うもので、垂直ブリッジマン法に比べて成
長速度を速くできるという利点があるものの、急激な温
度勾配により結晶内に熱歪みが生じたり、炉内のガス対
流による温度のゆらぎが原因となって、育成中にクラッ
クが発生しやすく、結晶の歩留まりが低いという欠点が
あった。In the Czochralski method, a raw material is put into a crucible, heated and melted, a seed crystal is brought into contact with the melt, and the melt is gradually pulled up while rotating to grow a crystal. Despite the advantage that the growth rate can be increased compared to the method, thermal distortion occurs in the crystal due to a sharp temperature gradient, and cracks occur during growth due to temperature fluctuation due to gas convection in the furnace And the yield of crystals was low.
【0005】これに対し垂直ブリッジマン法は、温度勾
配をもった炉内で融液を入れたルツボを移動し、種結晶
を挿入したツルボ先端(下端)より四ほう酸リチウム融
液を凝固させるもので、温度勾配が比較的緩やかで、且
つ温度のゆらぎが小さいため、チョコラルスキー法に比
べ良質の単結晶が得られるという特徴をもっている。On the other hand, the vertical Bridgman method moves a crucible containing a melt in a furnace having a temperature gradient and solidifies the lithium tetraborate melt from a crucible tip (lower end) into which a seed crystal is inserted. In addition, since the temperature gradient is relatively gentle and the temperature fluctuation is small, a high-quality single crystal can be obtained as compared with the Czochralski method.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、従来の
垂直ブリッジマン法の場合、育成中に原料の一部が蒸発
して組成ズレをおこし、最後に結晶化する部分、すなわ
ちルツボ内の融液の上部がガラス化してしまう。そのた
め冷却時に、ガラス化した上部と、その下方の結晶化部
分との間で熱膨張率の差による熱応力によりクラックが
発生し、結晶上部が製品として供し得なくなるという問
題があった。However, in the case of the conventional vertical Bridgman method, a part of the raw material evaporates during the growth and causes a composition shift, and finally a part to be crystallized, that is, a melt in the crucible is formed. The upper part is vitrified. Therefore, during cooling, cracks are generated due to thermal stress due to a difference in thermal expansion coefficient between the vitrified upper portion and the crystallized portion below the upper portion, and there is a problem that the upper portion of the crystal cannot be provided as a product.
【0007】本発明はこのような従来事情に鑑みてなさ
れたもので、その目的とするところは、ルツボ内に入れ
た原料の蒸発を防いでガラス化を防止し、安定して良質
な結晶を育成することができる四ほう酸リチウム単結晶
の製造方法を提供することである。[0007] The present invention has been made in view of such circumstances, and an object thereof is to prevent evaporation of raw materials put in a crucible, prevent vitrification, and stably produce high-quality crystals. An object of the present invention is to provide a method for producing a lithium tetraborate single crystal that can be grown.
【0008】[0008]
【課題を解決するための手段】上記目的を達成するべ
く、本願発明者は鋭意研究を重ねた結果、四ほう酸リチ
ウム単結晶の融液より比重が小さく、且つその融液に対
して融着しにくい炭素材料で融液の上部表面を覆うこと
により、原料の蒸発を防いでガラス化を防止し得、よっ
てクラックが生じず安定して良質な結晶を育成し得るこ
とを知見し、本発明を完成するに至った。Means for Solving the Problems In order to achieve the above object, the present inventors have conducted intensive studies and as a result, have found that the specific gravity is smaller than that of a single crystal of lithium tetraborate and that the single crystal is fused to the single crystal. By covering the upper surface of the melt with a difficult carbon material, it is possible to prevent evaporation of the raw material and prevent vitrification, and therefore, it is possible to stably grow high-quality crystals without cracks. It was completed.
【0009】すなわち本発明は、請求項1記載のよう
に、垂直ブリッジマン法もしくは垂直温度勾配凝固法に
より、ルツボ内の原料から四ほう酸リチウム単結晶を育
成する製造方法において、前記ルツボ内の原料の上部表
面を炭素材料により覆ったことを特徴とする。That is, the present invention provides a method for growing a single crystal of lithium tetraborate from a raw material in a crucible by a vertical Bridgman method or a vertical temperature gradient solidification method according to the present invention. Is characterized in that its upper surface is covered with a carbon material.
【0010】上記炭素材料としては、この種技術分野に
おいて通常用いられるもの、例えば、黒鉛、炭素などが
あげられる。また上記炭素材料の使用形態としては、育
成中に原料の一部が蒸発することを防止するべく、ルツ
ボ内の原料の上部表面を覆うことができれば、粉末状、
バルク状、繊維状の何れであってもよい。Examples of the carbon material include those commonly used in this technical field, for example, graphite, carbon and the like. In addition, as a usage form of the carbon material, if the upper surface of the raw material in the crucible can be covered in order to prevent a part of the raw material from evaporating during the growth, a powder form,
It may be in either bulk or fibrous form.
【0011】本発明の方法によれば、炭素材料によって
ルツボ内の原料の上部表面を覆うことで、育成中に該原
料の一部が蒸発することを防ぐことができ、且つ、炭素
材料は、四ほう酸リチウム単結晶の融液より比重が小さ
く、且つその融液に対して反応しにくいので、融着しに
くく、原料を汚染したり原料に含有される虞れもないの
で、クラックの無い高品質な四ほう酸リチウムを安定し
て得ることができる。According to the method of the present invention, by covering the upper surface of the raw material in the crucible with the carbon material, a part of the raw material can be prevented from evaporating during the growth, and the carbon material is Since the specific gravity is smaller than that of the melt of lithium tetraborate single crystal and it is hard to react with the melt, it is difficult to fuse and there is no risk of contaminating the raw material or being contained in the raw material, so that there is no crack. High quality lithium tetraborate can be stably obtained.
【0012】[0012]
【発明の実施の形態】以下、本発明による四ほう酸リチ
ウム単結晶の製造方法の実施の形態を、垂直ブリッジマ
ン法による場合を例にとって、図面を参照して説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for producing a lithium tetraborate single crystal according to the present invention will be described below with reference to the drawings, taking a vertical Bridgman method as an example.
【0013】図1は本発明の製造方法を実施するための
装置の一例を示し、図中の符号1はヒータ2が配設され
た電気炉で、この電気炉1の中には支持台3で支持され
たルツボ台4が収容されている。FIG. 1 shows an example of an apparatus for carrying out the manufacturing method of the present invention. In the figure, reference numeral 1 denotes an electric furnace in which a heater 2 is provided. The crucible table 4 supported by is accommodated.
【0014】ルツボ台4は、この種技術分野で通常用い
られる耐熱材料からなり、支持台3の上面に固定されて
いる。ルツボ台4の上面部分には、後述するルツボ5が
嵌合状且つ取り出し自在に収容される凹部4aが形成さ
れている。The crucible table 4 is made of a heat-resistant material usually used in this kind of technical field, and is fixed to the upper surface of the support table 3. A concave portion 4a in which a crucible 5 to be described later is fitted and removably accommodated is formed in the upper surface portion of the crucible base 4.
【0015】ルツボ5は、この種製造方法において従来
から用いられるものと同様に、大径状の胴体部5aと、
この胴体部5aの下方に設けられる小径状の種管5bと
を備えた形状のもので、前記凹部4a内に収容されて、
ルツボ台4上に立ち上がるよう支持されている。ルツボ
5の上面開口部は、ルツボ台4と同質材からなる蓋体6
で塞がれている。The crucible 5 includes a large-diameter body portion 5a and a crucible 5 similar to those conventionally used in this type of manufacturing method.
A small-diameter seed tube 5b provided below the body portion 5a, and is accommodated in the recess 4a.
It is supported to stand on the crucible stand 4. The upper opening of the crucible 5 has a lid 6 made of the same material as the crucible base 4.
It is closed by.
【0016】支持台3の下端には上下動機構7が設けら
れ、この上下動機構7の作動により、支持台3と一体に
ルツボ台4およびルツボ5が上下動するように構成され
ている。上記支持台3、ルツボ台4、ルツボ5が収容さ
れた電気炉1の収容空間1aの上部開口は、所定の蓋体
8で塞がれている。A vertical movement mechanism 7 is provided at a lower end of the support base 3, and the operation of the vertical movement mechanism 7 causes the crucible base 4 and the crucible 5 to move up and down integrally with the support base 3. The upper opening of the accommodation space 1 a of the electric furnace 1 in which the support table 3, the crucible table 4 and the crucible 5 are accommodated is closed by a predetermined lid 8.
【0017】以下、上記装置を用いた本発明の製造方法
による四ほう酸リチウム単結晶の製造について、より具
体的な実施例を挙げて説明する。Hereinafter, the production of a single crystal of lithium tetraborate by the production method of the present invention using the above apparatus will be described with reference to more specific examples.
【0018】[0018]
【実施例】まず、大気中もしくは不活性雰囲気において
所定のモル比で調合された純度4N(99.99wt
%)の四ほう酸リチウム単結晶原料aを、直径80m
m、長さ300mmに作製した白金製ルツボ5の胴体部
5aに入れ、直径5mm、長さ100mmの方位<11
0>方位に加工した四ほう酸リチウムの種結晶bを、種
管5bに挿入する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, purity 4N (99.99 wt.) Prepared at a predetermined molar ratio in the air or in an inert atmosphere.
%) Of the lithium tetraborate single crystal raw material a
m, placed in the body 5a of a platinum crucible 5 manufactured to a length of 300 mm, and having an orientation of <5 mm in diameter and 100 mm in length <11
The seed crystal b of lithium tetraborate processed to the 0> orientation is inserted into the seed tube 5b.
【0019】最後に、炭素材料cをルツボ5内に入れ、
該炭素材料cで、ルツボ5内の四ほう酸リチウム単結晶
原料aの上部表面を覆った。ここで、炭素材料cとして
は、黒鉛を、上記胴体部5a内に嵌合状且つ取り出し可
能に収容される円盤状に成形したものを用いた。さらに
この原料aを、種結晶bを溶かさないように920℃以
上で溶解した。Finally, the carbon material c is put in the crucible 5,
The upper surface of the lithium tetraborate single crystal raw material a in the crucible 5 was covered with the carbon material c. Here, as the carbon material c, graphite molded into a disk-like shape that is fitted in the body portion 5a and removably accommodated therein was used. Further, this raw material a was melted at 920 ° C. or higher so as not to melt the seed crystal b.
【0020】次いで、育成点において温度勾配を20℃
とし、ルツボ降下速度を0.3mm/時間として、白金
製ルツボ5を200mm移動させ、単結晶を成長させた
後、室温まで冷却した。Next, at the growth point, a temperature gradient of 20 ° C.
With the crucible descending speed set to 0.3 mm / hour, the platinum crucible 5 was moved by 200 mm to grow a single crystal, and then cooled to room temperature.
【0021】さらに白金製ルツボ5を破いて四ほう酸リ
チウムを取り出し、本発明の方法により製造された実施
品を得た。Further, the platinum crucible 5 was broken and lithium tetraborate was taken out to obtain a working product manufactured by the method of the present invention.
【0022】また、上記炭素材料cによりルツボ5内の
四ほう酸リチウム単結晶原料aの上部表面を覆わなかっ
たこと以外は、上記実施例と同様にして単結晶を成長さ
せて、比較品を得た。A comparative product was obtained by growing a single crystal in the same manner as in the above embodiment, except that the carbon material c did not cover the upper surface of the lithium tetraborate single crystal raw material a in the crucible 5. Was.
【0023】このようにして製造した本発明の実施品
と、従来の製造方法で製造した上記比較品とのそれぞれ
について、クラックの有無を肉眼による観察で調べたと
ころ、本発明実施品はクラックが生じておらず、高品質
な四ほう酸リチウムであった。これに対し比較品は、上
部にクラックが生じており、その部分は製品として使用
不能であることが確認できた。Each of the product of the present invention manufactured in this way and the above-mentioned comparative product manufactured by the conventional manufacturing method was examined by the naked eye for the presence or absence of cracks. It was not produced and was high quality lithium tetraborate. On the other hand, it was confirmed that the comparative product had a crack in the upper portion, and that portion was unusable as a product.
【0024】[0024]
【発明の効果】以上説明したように本発明は、ルツボ内
の原料の上部表面を炭素材料により覆って該原料の蒸発
を防いでガラス化を防止し、クラックの無い高品質な四
ほう酸リチウムを安定して得ることができる。従って、
原料の全てを製品として供し得るので、歩留りの良い四
ほう酸リチウム単結晶の製造方法として、この種分野に
おいて好適に用いる事ができる。As described above, the present invention provides a high quality lithium tetraborate having no cracks by covering the upper surface of the raw material in the crucible with a carbon material to prevent the raw material from evaporating and preventing vitrification. It can be obtained stably. Therefore,
Since all of the raw materials can be provided as products, they can be suitably used in this kind of field as a method for producing a lithium tetraborate single crystal having a high yield.
【図1】本発明に係る四ほう酸リチウム単結晶の製造方
法を実施する装置の一例を示す縦断正面図。FIG. 1 is a longitudinal sectional front view showing an example of an apparatus for carrying out a method for producing a lithium tetraborate single crystal according to the present invention.
1:電気炉 2:ヒータ 3:支持台 4:ルツボ台 5:白金製ルツボ 5a:胴体部 5b:種管 a:四ほう酸リチウム単結晶原料 b:種結晶 c:炭素材料 1: electric furnace 2: heater 3: support base 4: crucible base 5: platinum crucible 5a: body 5b: seed tube a: lithium tetraborate single crystal raw material b: seed crystal c: carbon material
Claims (1)
配凝固法により、ルツボ内の原料から四ほう酸リチウム
単結晶を育成する製造方法において、前記ルツボ内の原
料の上部表面を炭素材料により覆ったことを特徴とする
四ほう酸リチウム単結晶の製造方法。1. A method for growing a lithium tetraborate single crystal from a raw material in a crucible by a vertical Bridgman method or a vertical temperature gradient solidification method, wherein the upper surface of the raw material in the crucible is covered with a carbon material. A method for producing a lithium tetraborate single crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05924197A JP3887444B2 (en) | 1997-03-13 | 1997-03-13 | Method for producing lithium tetraborate single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05924197A JP3887444B2 (en) | 1997-03-13 | 1997-03-13 | Method for producing lithium tetraborate single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10251099A true JPH10251099A (en) | 1998-09-22 |
JP3887444B2 JP3887444B2 (en) | 2007-02-28 |
Family
ID=13107706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05924197A Expired - Lifetime JP3887444B2 (en) | 1997-03-13 | 1997-03-13 | Method for producing lithium tetraborate single crystal |
Country Status (1)
Country | Link |
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JP (1) | JP3887444B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007008734A (en) * | 2005-06-28 | 2007-01-18 | Chichibu Fuji Co Ltd | Lithium tetraborate single crystal and method for growing the same |
-
1997
- 1997-03-13 JP JP05924197A patent/JP3887444B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007008734A (en) * | 2005-06-28 | 2007-01-18 | Chichibu Fuji Co Ltd | Lithium tetraborate single crystal and method for growing the same |
JP4746925B2 (en) * | 2005-06-28 | 2011-08-10 | 株式会社秩父富士 | Lithium tetraborate single crystal and its growth method |
Also Published As
Publication number | Publication date |
---|---|
JP3887444B2 (en) | 2007-02-28 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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