JPH10233529A - 窒化物半導体素子およびその製造方法 - Google Patents

窒化物半導体素子およびその製造方法

Info

Publication number
JPH10233529A
JPH10233529A JP3020497A JP3020497A JPH10233529A JP H10233529 A JPH10233529 A JP H10233529A JP 3020497 A JP3020497 A JP 3020497A JP 3020497 A JP3020497 A JP 3020497A JP H10233529 A JPH10233529 A JP H10233529A
Authority
JP
Japan
Prior art keywords
nitride semiconductor
electrode
semiconductor device
gan
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3020497A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10233529A5 (OSRAM
Inventor
Norihide Yamada
範秀 山田
Shigeru Nakagawa
茂 中川
Yoshifumi Yamaoka
慶文 山岡
Tetsuya Takeuchi
哲也 竹内
Kazu Kaneko
和 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Priority to JP3020497A priority Critical patent/JPH10233529A/ja
Priority to US09/021,053 priority patent/US6239490B1/en
Publication of JPH10233529A publication Critical patent/JPH10233529A/ja
Publication of JPH10233529A5 publication Critical patent/JPH10233529A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP3020497A 1997-02-14 1997-02-14 窒化物半導体素子およびその製造方法 Pending JPH10233529A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3020497A JPH10233529A (ja) 1997-02-14 1997-02-14 窒化物半導体素子およびその製造方法
US09/021,053 US6239490B1 (en) 1997-02-14 1998-02-09 P-contact for a Group III-nitride semiconductor device and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3020497A JPH10233529A (ja) 1997-02-14 1997-02-14 窒化物半導体素子およびその製造方法

Publications (2)

Publication Number Publication Date
JPH10233529A true JPH10233529A (ja) 1998-09-02
JPH10233529A5 JPH10233529A5 (OSRAM) 2005-01-06

Family

ID=12297217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3020497A Pending JPH10233529A (ja) 1997-02-14 1997-02-14 窒化物半導体素子およびその製造方法

Country Status (2)

Country Link
US (1) US6239490B1 (OSRAM)
JP (1) JPH10233529A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299687A (ja) * 2001-04-02 2002-10-11 Nagoya Kogyo Univ 窒化ガリウム系化合物半導体層のｐ型電極形成方法
US7015053B2 (en) 1999-03-04 2006-03-21 Nichia Corporation Nitride semiconductor laser device
US7061110B2 (en) 1998-10-26 2006-06-13 Industrial Technology Research Institute Ohmic contact to semiconductor devices and method of manufacturing the same
US7083996B2 (en) 1999-02-09 2006-08-01 Nichia Corporation Nitride semiconductor device and manufacturing method thereof

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291840B1 (en) * 1996-11-29 2001-09-18 Toyoda Gosei Co., Ltd. GaN related compound semiconductor light-emitting device
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP3785820B2 (ja) * 1998-08-03 2006-06-14 豊田合成株式会社 発光装置
EP1115161A4 (en) * 1998-09-18 2001-12-05 Mitsubishi Cable Ind Ltd SEMICONDUCTOR PHOTODETECTOR
US6774449B1 (en) * 1999-09-16 2004-08-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6586328B1 (en) * 2000-06-05 2003-07-01 The Board Of Trustees Of The University Of Illinois Method to metallize ohmic electrodes to P-type group III nitrides
US7141828B2 (en) * 2003-03-19 2006-11-28 Gelcore, Llc Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact
US20040191330A1 (en) * 2003-03-31 2004-09-30 Keefe Candace R. Daily skin care regimen
KR101034055B1 (ko) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
KR20050042715A (ko) * 2003-11-04 2005-05-10 삼성전자주식회사 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법
TW200529464A (en) * 2004-02-27 2005-09-01 Super Nova Optoelectronics Corp Gallium nitride based light-emitting diode structure and manufacturing method thereof
US7022550B2 (en) * 2004-04-07 2006-04-04 Gelcore Llc Methods for forming aluminum-containing p-contacts for group III-nitride light emitting diodes
KR100576776B1 (ko) * 2004-12-09 2006-05-08 한국전자통신연구원 반도체 광소자의 제작 방법
JP4639107B2 (ja) * 2005-03-31 2011-02-23 富士通株式会社 半導体レーザ及びその製造方法
JP4536568B2 (ja) * 2005-03-31 2010-09-01 住友電工デバイス・イノベーション株式会社 Ｆｅｔの製造方法
JP4101823B2 (ja) * 2005-06-13 2008-06-18 株式会社東芝 半導体素子、電極形成方法及び半導体素子の製造方法
US20080110402A1 (en) * 2006-11-10 2008-05-15 Saint-Gobain Ceramics & Plastics, Inc. Susceptor and method of forming a led device using such susceptor
DE102016125857B4 (de) * 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102017103789B4 (de) * 2017-02-23 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832115A (ja) * 1994-07-19 1996-02-02 Sharp Corp 電極構造およびその製造方法
JP3461074B2 (ja) * 1995-12-12 2003-10-27 パイオニア株式会社 Ｉｉｉ族窒化物半導体発光素子製造方法
US5923690A (en) * 1996-01-25 1999-07-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
US5776623A (en) * 1996-07-29 1998-07-07 Eastman Kodak Company Transparent electron-injecting electrode for use in an electroluminescent device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7061110B2 (en) 1998-10-26 2006-06-13 Industrial Technology Research Institute Ohmic contact to semiconductor devices and method of manufacturing the same
US7083996B2 (en) 1999-02-09 2006-08-01 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US7015053B2 (en) 1999-03-04 2006-03-21 Nichia Corporation Nitride semiconductor laser device
US7496124B2 (en) 1999-03-04 2009-02-24 Nichia Corporation Nitride semiconductor laser device
JP2002299687A (ja) * 2001-04-02 2002-10-11 Nagoya Kogyo Univ 窒化ガリウム系化合物半導体層のｐ型電極形成方法

Also Published As

Publication number Publication date
US6239490B1 (en) 2001-05-29

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