JPH10219109A - Resin composition, adhesive, adhesive film, and lead frame and semiconductor device produced therefrom - Google Patents
Resin composition, adhesive, adhesive film, and lead frame and semiconductor device produced therefromInfo
- Publication number
- JPH10219109A JPH10219109A JP9024576A JP2457697A JPH10219109A JP H10219109 A JPH10219109 A JP H10219109A JP 9024576 A JP9024576 A JP 9024576A JP 2457697 A JP2457697 A JP 2457697A JP H10219109 A JPH10219109 A JP H10219109A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- film
- weight
- dianhydride
- tetracarboxylic dianhydride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4801—Structure
- H01L2224/48011—Length
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Die Bonding (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体パッケージ
の接着部材に用いられて耐熱性があり、特にインナーリ
ードの固定に好適な樹脂組成物、接着剤、接着フィル
ム、これを用いたリードフレーム及び半導体装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition, an adhesive, an adhesive film which is used for an adhesive member of a semiconductor package and has heat resistance and is particularly suitable for fixing inner leads, a lead frame using the same, and a lead frame. The present invention relates to a semiconductor device.
【０００２】[0002]
【従来の技術】半導体装置内で用いられる接着テープに
は、リード固定テープ、ＬＯＣテープ、ダイボンドテー
プ等があり、例えば、リード固定テープは、リードフレ
ームのリードピンを固定し、リードフレーム自体又は半
導体装置全体の生産性、信頼性を向上させるために使用
される。半導体パッケージ、特にＱＦＰ（Ｑｕａｄ Ｆ
ｌａｔ Ｐａｃｋａｇｅ）では、インナーリードを押さ
えるリード固定テープは、従来、耐熱性ベースフィルム
上に熱硬化性樹脂接着剤を塗付した接着テープが用いら
れてきた。2. Description of the Related Art Adhesive tapes used in semiconductor devices include lead fixing tapes, LOC tapes, die bond tapes, and the like. For example, the lead fixing tape fixes lead pins of a lead frame, and the lead frame itself or the semiconductor device. Used to improve overall productivity and reliability. Semiconductor packages, especially QFP (Quad F
In the case of “lat package”, an adhesive tape in which a thermosetting resin adhesive is applied on a heat-resistant base film has been used as a lead fixing tape for holding down inner leads.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来のリード
固定テープは上記したように接着剤層に熱硬化性樹脂を
用いているので耐熱性が十分でなく、ワイヤボンド時に
熱によって多量のアウトガスが発生し、その際キャピラ
リーを詰まらせる問題やリード汚染によるワイヤボンド
不良等の問題があった。本発明の目的は、このような問
題を解決し、高温におけるワイヤボンド性を向上させる
接着部材、特に、リード固定テープに好適な耐熱性接着
剤、フィルム状接着剤、それを用いたリードフレーム及
び半導体装置を提供することである。However, since the conventional lead fixing tape uses a thermosetting resin for the adhesive layer as described above, the heat resistance is not sufficient, and a large amount of outgas is generated by heat during wire bonding. At that time, there were problems such as clogging the capillary and wire bond failure due to lead contamination. An object of the present invention is to solve such a problem and to improve the bonding property of a wire at high temperatures, in particular, a heat-resistant adhesive suitable for a lead fixing tape, a film-like adhesive, a lead frame using the same, and It is to provide a semiconductor device.
【０００４】[0004]
【課題を解決するための手段】本発明者らは、種々の樹
脂とその組成、耐熱性及び接着性の関係について鋭意検
討した結果、特定の耐熱性樹脂を用いることでワイヤボ
ンド性の良好なリード固定テープが得られることを見出
し、本発明を完成した。すなわち、本発明は、下記の樹
脂組成物、接着剤、接着フィルム、これを用いたリード
フレーム及び半導体装置である。 （１）（ａ）テトラカルボン酸二無水物；と（ｂ）ジア
ミン又はジイソシアネート；と（ｃ）ポリエステル；の
含有物を反応させて得られる共重合体を含む樹脂組成
物。 （２）（ｃ）の重量が、（ａ）＋（ｂ）＋（ｃ）の合計
重量に対して３０〜７０％である、上記（１）の樹脂組
成物。 （３）テトラカルボン酸二無水物（ａ）は、エチレング
リコールビストリメリテート二無水物、デカメチレング
リコールビストリメリテート二無水物及びビスフェノー
ルＡビストリメリテート二無水物から選ばれるテトラカ
ルボン酸二無水物を、テトラカルボン酸二無水物の総量
に対して５０モル％以上含むものである、上記（１）又
は（２）のいずれかの樹脂組成物。Means for Solving the Problems The inventors of the present invention have conducted intensive studies on the relationship between various resins and their compositions, heat resistance and adhesiveness. The present inventors have found that a lead fixing tape can be obtained, and have completed the present invention. That is, the present invention is the following resin composition, adhesive, adhesive film, lead frame and semiconductor device using the same. (1) A resin composition containing a copolymer obtained by reacting (a) tetracarboxylic dianhydride; (b) a diamine or diisocyanate; and (c) a polyester. (2) The resin composition according to (1), wherein the weight of (c) is 30 to 70% based on the total weight of (a) + (b) + (c). (3) The tetracarboxylic dianhydride (a) is a tetracarboxylic dianhydride selected from ethylene glycol bistrimellitate dianhydride, decamethylene glycol bistrimellitate dianhydride and bisphenol A bistrimellitate dianhydride The resin composition according to any one of (1) and (2) above, wherein the resin composition contains at least 50 mol% of the total amount of tetracarboxylic dianhydride.
【０００５】（４）（ａ）テトラカルボン酸二無水物；
と（ｂ）ジアミン又はジイソシアネート；と（ｃ）ポリ
エステル；の含有物を反応させて得られる共重合体を含
む接着剤。 （５）（ｃ）の重量が、（ａ）＋（ｂ）＋（ｃ）の合計
重量に対して３０〜７０％である、上記（４）の接着
剤。 （６）テトラカルボン酸二無水物（ａ）は、エチレング
リコールビストリメリテート二無水物、デカメチレング
リコールビストリメリテート二無水物及びビスフェノー
ルＡビストリメリテート二無水物から選ばれるテトラカ
ルボン酸二無水物を、テトラカルボン酸二無水物の総量
に対して５０モル％以上含むものである、上記（４）又
は（５）のいずれかの接着剤。 （７）上記（４）〜（６）のいずれかの接着剤の層を含
んでなるものであるフィルム状の接着剤。(4) (a) tetracarboxylic dianhydride;
And (b) a diamine or diisocyanate; and (c) a polyester. (5) The adhesive according to (4), wherein the weight of (c) is 30 to 70% based on the total weight of (a) + (b) + (c). (6) The tetracarboxylic dianhydride (a) is a tetracarboxylic dianhydride selected from ethylene glycol bistrimellitate dianhydride, decamethylene glycol bistrimellitate dianhydride and bisphenol A bistrimellitate dianhydride The adhesive according to any one of the above (4) or (5), wherein the adhesive contains 50 mol% or more of the total amount of tetracarboxylic dianhydride. (7) A film-like adhesive comprising the adhesive layer of any of the above (4) to (6).
【０００６】（８）２７０℃で１０分間加熱したとき
に、接着剤の層の重量減少が加熱前の接着剤の層の重量
に対して１％（重量比）以下である、上記（７）のフィ
ルム状の接着剤。 （９）耐熱性フィルムの少なくとも片面に、上記（４）
〜（６）のいずれかの接着剤の層が形成されている接着
フィルム。(8) When heated at 270 ° C. for 10 minutes, the weight loss of the adhesive layer is 1% or less (weight ratio) with respect to the weight of the adhesive layer before heating. Film adhesive. (9) At least one side of the heat-resistant film has the above (4)
An adhesive film on which an adhesive layer according to any one of (1) to (6) is formed.
【０００７】（１０）２７０℃で１０分間加熱したとき
に、接着剤の層の重量減少が加熱前の接着剤の層の重量
に対して１％（重量比）以下である、上記（９）の接着
フィルム。(10) When heated at 270 ° C. for 10 minutes, the weight loss of the adhesive layer is not more than 1% (weight ratio) with respect to the weight of the adhesive layer before heating (9). Adhesive film.
【０００８】（１１）上記（７）もしくは（８）の接着
剤又は上記（９）もしくは（１０）の接着フィルムが貼
り付けられているリードフレーム。 （１２）上記リードフレームを備え、少なくとも接着部
材部分は封止材で封止されている半導体装置。(11) A lead frame to which the adhesive of (7) or (8) or the adhesive film of (9) or (10) is attached. (12) A semiconductor device including the lead frame, wherein at least an adhesive member is sealed with a sealing material.
【０００９】[0009]
【発明の実施の形態】本発明における、（ａ）テトラカ
ルボン酸二無水物；と（ｂ）ジアミン又はジイソシアネ
ート；と（ｃ）ポリエステル；の含有物を反応させて得
られる共重合体は、上記（ａ）と（ｂ）と（ｃ）、及び
触媒等のその他の成分を適宜加え、ポリエステルイミド
共重合体が生成する条件で、反応させて得られる。得ら
れた反応物をそのまま使用することもできるが、アルコ
ール、水等の貧溶媒と混合して得られた沈殿物を乾燥さ
せた共重合体を用いる方が好ましい。BEST MODE FOR CARRYING OUT THE INVENTION The copolymer obtained by reacting the contents of (a) tetracarboxylic dianhydride; (b) diamine or diisocyanate; and (c) polyester in the present invention is as described above. It is obtained by appropriately adding (a), (b), (c), and other components such as a catalyst, and reacting under conditions that produce a polyesterimide copolymer. Although the obtained reaction product can be used as it is, it is preferable to use a copolymer obtained by mixing a poor solvent such as alcohol and water and drying a precipitate obtained.
【００１０】本発明において用いることができるテトラ
カルボン酸二無水物（ａ）としては、ピロメリット酸二
無水物、３，３’，４，４’−ベンゾフェノンテトラカ
ルボン酸二無水物、３，３’，４，４’−ビフェニルテ
トラカルボン酸二無水物、２，２−ビスフタル酸ヘキサ
フルオロイソプロピリデン二無水物、ビス（３，４−ジ
カルボキシフェニル）エーテル二無水物、ビス（３，４
−ジカルボキシフェニル）スルホン二無水物、４，４’
−ビス（３，４−ジカルボキシフェノキシ）ジフェニル
スルホン二無水物、２，２−ビス［４−（３，４−ジカ
ルボキシフェノキシ）フェニル］プロパン二無水物、The tetracarboxylic dianhydride (a) which can be used in the present invention includes pyromellitic dianhydride, 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride, 2,2-bisphthalic acid hexafluoroisopropylidene dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, bis (3,4
-Dicarboxyphenyl) sulfone dianhydride, 4,4 '
-Bis (3,4-dicarboxyphenoxy) diphenylsulfone dianhydride, 2,2-bis [4- (3,4-dicarboxyphenoxy) phenyl] propane dianhydride,
【００１１】エチレングリコールビストリメリテート二
無水物（ＥＢＴＡ）、デカメチレングリコールビストリ
メリテート二無水物（ＤＢＴＡ）、ビスフェノールＡビ
ストリメリテート二無水物（ＢＡＢＴ）、２，２−ビス
［４−（３，４−ジカルボキシフェニルベンゾイルオキ
シ）フェニル］ヘキサフルオロプロパン二無水物、４，
４’−［１，４−フェニレンビス（１−メチルエチリデ
ン）］ビスフェニルビストリメリテート二無水物、等が
使用でき、２種以上を併用してもよい。これらのテトラ
カルボン酸二無水物は、遊離酸（テトラカルボン酸）、
ジエステル、ジクロライド等の誘導体を使用することも
できる。[0011] Ethylene glycol bistrimellitate dianhydride (EBTA), decamethylene glycol bistrimellitate dianhydride (DBTA), bisphenol A bistrimellitate dianhydride (BABT), 2,2-bis [4- (3 , 4-Dicarboxyphenylbenzoyloxy) phenyl] hexafluoropropane dianhydride, 4,
4 ′-[1,4-phenylenebis (1-methylethylidene)] bisphenylbistrimellitate dianhydride and the like can be used, and two or more kinds may be used in combination. These tetracarboxylic dianhydrides include free acids (tetracarboxylic acids),
Derivatives such as diesters and dichlorides can also be used.
【００１２】なお、これらの中でも、エチレングリコー
ルビストリメリテート二無水物（ＥＢＴＡ）、デカメチ
レングリコールビストリメリテート二無水物（ＤＢＴ
Ａ）、又はビスフェノールＡビストリメリテート二無水
物（ＢＡＢＴ）が好ましく、特にＢＡＢＴが好ましく、
それらの量は、テトラカルボン酸二無水物の総量に対し
て、ＥＢＴＡ、ＤＢＴＡ及びＤＢＴＡから選ばれるテト
ラカルボン酸二無水物を、テトラカルボン酸二無水物の
総量に対して５０モル％以上含むものが好ましい。Among them, ethylene glycol bistrimellitate dianhydride (EBTA) and decamethylene glycol bistrimellitate dianhydride (DBT)
A) or bisphenol A bistrimellitate dianhydride (BABT) is preferred, especially BABT is preferred,
The amount thereof is such that at least 50 mol% of a tetracarboxylic dianhydride selected from EBTA, DBTA and DBTA is contained in the total amount of the tetracarboxylic dianhydride based on the total amount of the tetracarboxylic dianhydride. Is preferred.
【００１３】また、接着剤の接着力、耐熱性等の特性を
損なわない範囲で、テトラカルボン酸二無水物のほか
に、無水トリメリット酸等のトリカルボン酸無水物を併
用してもよい。Further, a tricarboxylic anhydride such as trimellitic anhydride may be used in addition to the tetracarboxylic dianhydride as long as the properties such as adhesive strength and heat resistance of the adhesive are not impaired.
【００１４】用いることができるジアミンとしては、
１，２−ジアミノプロパン、１，３−ジアミノプロパ
ン、１，２−ジアミノ−２−メチルプロパン、１，４−
ジアミノブタン、１，６−ジアミノヘキサン、１，７−
ジアミノヘプタン、１，８−ジアミノオクタン、１，９
−ジアミノノナン、１，１０−ジアミノデカン、１，１
２−ジアミノドデカン、等のアルキレンジアミン、As the diamine which can be used,
1,2-diaminopropane, 1,3-diaminopropane, 1,2-diamino-2-methylpropane, 1,4-
Diaminobutane, 1,6-diaminohexane, 1,7-
Diaminoheptane, 1,8-diaminooctane, 1,9
-Diaminononane, 1,10-diaminodecane, 1,1
Alkylenediamines such as 2-diaminododecane,
【００１５】イソホロンジアミン、フェニレンジアミ
ン、トルイレンジアミン、キシリレンジアミン、ナフタ
レンジアミン、ジシクロヘキシルメタンジアミン、４，
４’−ジアミノジフェニルメタン、４，４’−ジアミノ
ジフェニルエーテル、４，４’−ジアミノジフェニルス
ルホン、４，４’−ジアミノベンズアニリド、３，３’
−ジアミノジフェニルスルホン、３，３’−ジアミノベ
ンゾフェノン、３，３’−ジメチルジフェニル−４，
４’−ジアミン、３，３’，５，５’−テトラメチル−
４，４’−ジアミノジフェニルメタン、３，３’，５，
５’−テトライソプロピル−４，４’−ジアミノジフェ
ニルメタン、１，４−ビス（４−アミノクミル）ベンゼ
ン、１，３−ビス（４−アミノクミル）ベンゼン、１，
４−ビス（４−アミノフェノキシ）ベンゼン、１，４ー
ビス（３−アミノフェノキシ）ベンゼン、１，３−ビス
（３−アミノフェノキシ）ベンゼン、２，２−ビス［４
−（４−アミノフェノキシ）フェニル］プロパン、２，
２−ビス［４−（３−アミノフェノキシ）フェニル］プ
ロパン、ビス［４−（４−アミノフェノキシ）フェニ
ル］スルホン、ビス［４−（３−アミノフェノキシ）フ
ェニル］スルホン、ビス［４−（４−アミノフェノキ
シ）フェニル］エーテル、２，２−ビス［４−（４−ア
ミノフェノキシ）フェニル］ビフェニル、Isophoronediamine, phenylenediamine, tolylenediamine, xylylenediamine, naphthalenediamine, dicyclohexylmethanediamine, 4,
4'-diaminodiphenylmethane, 4,4'-diaminodiphenylether, 4,4'-diaminodiphenylsulfone, 4,4'-diaminobenzanilide, 3,3 '
-Diaminodiphenylsulfone, 3,3'-diaminobenzophenone, 3,3'-dimethyldiphenyl-4,
4'-diamine, 3,3 ', 5,5'-tetramethyl-
4,4'-diaminodiphenylmethane, 3,3 ', 5
5′-tetraisopropyl-4,4′-diaminodiphenylmethane, 1,4-bis (4-aminocumyl) benzene, 1,3-bis (4-aminocumyl) benzene, 1,
4-bis (4-aminophenoxy) benzene, 1,4-bis (3-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 2,2-bis [4
-(4-aminophenoxy) phenyl] propane, 2,
2-bis [4- (3-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [4- (4 -Aminophenoxy) phenyl] ether, 2,2-bis [4- (4-aminophenoxy) phenyl] biphenyl,
【００１６】次式で表されるシロキサンジアミン、A siloxane diamine represented by the following formula:
【化１】 〔式中、Ｒ1及びＲ2は２価の有機基、Ｒ3及びＲ4は１価
の有機基を示し、ｍは１〜１００の整数を示す。〕等が
あり、これらは２種類以上併用してもよい。Embedded image [In the formula, R 1 and R 2 represent a divalent organic group, R 3 and R 4 represent a monovalent organic group, and m represents an integer of 1 to 100. And these may be used in combination of two or more.
【００１７】また、用いることができるジイソシアネー
トとしては、上に示したジアミンにおいて、「アミノ」
を「イソシアネート」と読み替えたものを挙げることが
できる。The diisocyanates which can be used include the above-mentioned diamines such as "amino"
Can be replaced with "isocyanate".
【００１８】また、本発明で用いることができるポリエ
ステルは、ジカルボン酸とジオールとの反応によって得
ることができる。ジカルボン酸としては、コハク酸、グ
ルタル酸、アジピン酸、スペリン酸、アゼライン酸、セ
バチン酸、デカンジカルボン酸等の脂肪族ジカルボン酸
や、テレフタル酸、イソフタル酸、フタル酸、ナフタレ
ンジカルボン酸等の芳香族ジカルボン酸が挙げられる。
これらのジカルボン酸は単独で用いてもよいし、２種以
上を混合して用いてもよい。得られる反応物（ポリエス
テルイミド共重合体）を柔軟にするためには脂肪族ジカ
ルボン酸が好ましい。The polyester usable in the present invention can be obtained by reacting a dicarboxylic acid with a diol. Examples of dicarboxylic acids include aliphatic dicarboxylic acids such as succinic acid, glutaric acid, adipic acid, speric acid, azelaic acid, sebacic acid, and decane dicarboxylic acid, and aromatics such as terephthalic acid, isophthalic acid, phthalic acid, and naphthalenedicarboxylic acid. Dicarboxylic acids.
These dicarboxylic acids may be used alone or in combination of two or more. Aliphatic dicarboxylic acids are preferred for softening the resulting reactant (polyesterimide copolymer).
【００１９】ジオールとしては、エチレングリコール、
プロピレングリコール、ブタンジオール、１，３−ブチ
レングリコール、２−メチル−１，３−プロパンジオー
ル、ネオペンチルグリコール、３−メチル−１，５−ペ
ンタンジオール、ヘキサンジオール、２，２−ジエチル
−１，３−プロパンジオール、２−エチル−１，３−ヘ
キサンジオール、３，３−ジメチロールヘプタン、ノナ
ンジオール、２−メチル−１，８−オクタンジオール、
デカンジオール等が挙げられる。これらのジオールは単
独で用いてもよいし、２種以上を混合して用いてもよ
い。ジカルボン酸とジオールの反応は、ポリエステルが
生成する条件であれば特に制限するものではないが、熔
融反応によれば溶媒除去等の精製操作が不要で好まし
い。As the diol, ethylene glycol,
Propylene glycol, butanediol, 1,3-butylene glycol, 2-methyl-1,3-propanediol, neopentyl glycol, 3-methyl-1,5-pentanediol, hexanediol, 2,2-diethyl-1, 3-propanediol, 2-ethyl-1,3-hexanediol, 3,3-dimethylolheptane, nonanediol, 2-methyl-1,8-octanediol,
Decanediol and the like. These diols may be used alone or as a mixture of two or more. The reaction between the dicarboxylic acid and the diol is not particularly limited as long as the polyester is formed. However, the melting reaction is preferable because no purification operation such as solvent removal is required.
【００２０】ポリエステルの製造の際のジカルボン酸と
ジオールの使用量は、目的とする末端基によって適宜決
められる。ジカルボン酸を過剰量に用いれば、ポリマの
両末端がカルボキシル基を有するポリエステルが得ら
れ、ジオールを過剰量に用いれば、ポリマの両末端がヒ
ドロキシ基を有するポリエステルが得られる。いずれの
ポリエステルを用いることもできるが、接着力及び耐熱
性等の物性の良好なものを得るためには、好ましくは、
ポリマの両末端がカルボキシル基を有するポリエステル
である。また、製造される（又は使用される）ポリエス
テルの平均分子量は、好ましくは５００〜５，０００で
ある。The amounts of the dicarboxylic acid and diol used in the production of the polyester are appropriately determined depending on the desired terminal groups. If the dicarboxylic acid is used in excess, a polyester having carboxyl groups at both ends of the polymer can be obtained, and if the diol is used in excess, a polyester having hydroxy groups at both ends of the polymer can be obtained. Although any polyester can be used, in order to obtain a good physical property such as adhesive strength and heat resistance, preferably,
Both ends of the polymer are polyesters having a carboxyl group. The average molecular weight of the produced (or used) polyester is preferably 500 to 5,000.
【００２１】（ａ）テトラカルボン酸二無水物；と
（ｂ）ジアミン又はジイソシアネート；と（ｃ）ポリエ
ステル；との含有物を反応させて得られる反応物（ポリ
エステルイミド共重合体）を調製する際、原料のポリエ
ステル（ｃ）の使用量（重量）は、樹脂原料の総重量、
すなわち、上記（ａ）＋（ｂ）＋（ｃ）の合計重量に対
して３０〜７０％が好ましい。この場合に、接着力及び
耐熱性の良好なものが得られるからである。上記（ａ）
と（ｂ）と（ｃ）、及びその他の成分（触媒等）を適宜
加えて、反応物（ポリエステルイミド共重合体）を生成
させるには、これらを有機溶媒中で混合する。この際、
テトラカルボン酸二無水物（ａ）とジアミン又はジイソ
シアネート（ｂ）の使用量はポリエステル（ｃ）の官能
基の量を考慮して、調整する。When preparing a reaction product (polyesterimide copolymer) obtained by reacting the contents of (a) tetracarboxylic dianhydride; (b) diamine or diisocyanate; and (c) polyester; , The amount (weight) of the raw material polyester (c) is the total weight of the resin raw material,
That is, 30 to 70% of the total weight of (a) + (b) + (c) is preferable. In this case, a material having good adhesive strength and heat resistance can be obtained. (A) above
, (B) and (c), and other components (such as a catalyst) are appropriately added to form a reactant (polyesterimide copolymer) in an organic solvent. On this occasion,
The amounts of the tetracarboxylic dianhydride (a) and the diamine or diisocyanate (b) are adjusted in consideration of the amount of the functional group of the polyester (c).
【００２２】本発明において、ポリエステルとして両末
端がカルボキシル基を有するポリエステルを用いる場合
には、テトラカルボン酸二無水物及び両末端がカルボキ
シル基を有するポリエステル（酸成分）と、ジアミンも
しくはジイソシアネート（アミン成分）とは、ほぼ等モ
ルの使用を基本とする。許容されるいずれか一方の過剰
量は、好ましくは１０モル％以内、更に好ましくは５モ
ル％以内である。In the present invention, when a polyester having a carboxyl group at both terminals is used as the polyester, tetracarboxylic dianhydride and a polyester having a carboxyl group at both terminals (acid component) and a diamine or diisocyanate (amine component) ) Is based on the use of approximately equimolar amounts. The acceptable excess of any one is preferably within 10 mol%, more preferably within 5 mol%.
【００２４】反応（ポリエステルイミド共重合体生成反
応）に用いられる有機溶媒は、Ｎ−メチル−ピロリド
ン、Ｎ，Ｎ−ジメチルアセトアミド、Ｎ，Ｎ−ジメチル
ホルムアミド、スルホラン等の非プロトン性極性溶媒、
テトラヒドロフラン、ジオキサン、モノグライム、ジグ
ライム等のエーテル系有機溶媒等が挙げられる。また、
原料モノマーや反応物（ポリエステルイミド共重合体）
の溶解のため、ベンゼン、トルエン、キシレン、メチル
エチルケトン、メチルセロソルブ、セロソルブアセテー
ト等の有機溶媒を適量用いることもできる。Organic solvents used in the reaction (polyesterimide copolymer formation reaction) include aprotic polar solvents such as N-methyl-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, sulfolane, and the like.
Examples thereof include ether-based organic solvents such as tetrahydrofuran, dioxane, monoglyme, and diglyme. Also,
Raw material monomers and reactants (polyesterimide copolymer)
For dissolution of an organic solvent, an appropriate amount of an organic solvent such as benzene, toluene, xylene, methyl ethyl ketone, methyl cellosolve, and cellosolve acetate can be used.
【００２５】得られた反応物（ポリエステルイミド共重
合体）に有機溶剤を加えてワニス等の液状の樹脂組成物
とする場合に用いられる有機溶媒としては、Ｎ−メチル
−ピロリドン、Ｎ，Ｎ−ジメチルアセトアミド、Ｎ，Ｎ
−ジメチルホルムアミド等の非プロトン性極性溶媒、テ
トラヒドロフラン、ジオキサン、モノグライム、ジグラ
イム等のエーテル系有機溶媒、ベンゼン、トルエン、キ
シレン、メチルエチルケトン、シクロヘキサノン、メチ
ルセロソルブ、セロソルブアセテート、あるいはこれら
の混合溶媒等がある。When an organic solvent is added to the obtained reaction product (polyesterimide copolymer) to form a liquid resin composition such as a varnish, the organic solvent used is N-methyl-pyrrolidone, N, N- Dimethylacetamide, N, N
-Aprotic polar solvents such as dimethylformamide; ether-based organic solvents such as tetrahydrofuran, dioxane, monoglyme and diglyme; benzene, toluene, xylene, methyl ethyl ketone, cyclohexanone, methyl cellosolve, cellosolve acetate, and mixed solvents thereof.
【００２６】液状の樹脂組成物（ワニス）は、半導体素
子やリードフレーム等の被着体にこれを直接塗布して接
着部材として用いられてもよいし、これを予めフィルム
状（又はシート状）のものとし、これを被着体に適用し
たのち熱圧着して用いてもよい。The liquid resin composition (varnish) may be directly applied to an adherend such as a semiconductor element or a lead frame to be used as an adhesive member, or may be used in advance as a film (or sheet). It may be applied to an adherend and then thermocompression-bonded.
【００２７】フィルム状（又はシート状）の接着剤の製
造は、本発明の樹脂組成物を前記した有機溶媒で適当に
希釈したのち、ガラス板、ステンレス板等の平板上、あ
るいはポリエステル等のフィルム上に一定の厚さで流延
・塗布したのち、通常、初めは約８０〜１５０℃で数分
〜数時間、引き続き約２００〜３００℃で数分〜数時間
加熱したのち、これを平板又はフィルムから引き剥がす
と得られる。The adhesive in the form of a film (or sheet) is prepared by appropriately diluting the resin composition of the present invention with the above-mentioned organic solvent, and then, on a flat plate such as a glass plate or a stainless plate, or a film such as polyester. After casting and coating with a constant thickness on the upper part, usually, it is first heated at about 80 to 150 ° C. for several minutes to several hours, and subsequently heated at about 200 to 300 ° C. for several minutes to several hours. Obtained by peeling from the film.
【００２８】本発明の樹脂組成物をフィルム又はシート
等の基材に塗布もしくは展延し、あるいは含浸させた後
に、これを加熱・乾燥して、複層の接着フィルムや複合
シートとすることができる。用いられる基材としては、
フィルム、ガラス布、炭素繊維布、ポリアラミド布等の
クロス、銅箔、アルミ箔、ステンレス箔等の金属箔等が
ある。After the resin composition of the present invention is applied or spread or impregnated on a substrate such as a film or sheet, it is heated and dried to form a multi-layer adhesive film or composite sheet. it can. As the substrate used,
Cloth such as film, glass cloth, carbon fiber cloth, and polyaramid cloth; and metal foil such as copper foil, aluminum foil, and stainless steel foil.
【００２９】耐熱性フィルムの少なくとも片面に接着剤
の層が形成されている、本発明の接着フィルムは、本発
明の樹脂組成物を前記有機溶媒で適当に希釈した後、ベ
ースフィルムとなる耐熱性フィルムの片側又は両面に塗
布し、これを上記と同様に加熱処理して、製造すること
ができる。耐熱性フィルムの両面に塗布する場合、接着
剤の種類は同一でも異なっていても良い。接着剤を耐熱
性フィルムに塗布する方法は特に制限はない。ドクター
ブレードやナイフコーター、ダイコーター等いずれの方
法で塗布してもよい。また接着剤のワニス中にフィルム
を通して塗工してもよいが、厚みの制御が難しいので好
ましくない。The adhesive film of the present invention, in which an adhesive layer is formed on at least one side of the heat-resistant film, is prepared by appropriately diluting the resin composition of the present invention with the above-mentioned organic solvent and then forming a heat-resistant base film. The film can be produced by applying it to one or both sides of a film and subjecting it to a heat treatment in the same manner as described above. When applied to both surfaces of the heat resistant film, the type of adhesive may be the same or different. The method for applying the adhesive to the heat-resistant film is not particularly limited. The coating may be performed by any method such as a doctor blade, a knife coater, and a die coater. Further, the film may be applied through a film in a varnish of an adhesive, but it is not preferable because the thickness is difficult to control.
【００３０】ここで用いられる耐熱性フィルムには、ポ
リイミド、ポリアミドやポリサルフォン、ポリフェニレ
ンサルファイド、ポリエーテルエーテルケトン、ポリア
リレート等のエンジニアリングプラスチック等のフィル
ムが挙げられる。耐熱性フィルムのガラス転移温度（Ｔ
ｇ）は、接着剤のＴｇより高いものが使用され、好まし
くは２００℃以上、より好ましくは２５０℃以上のもの
が使用される。耐熱性フィルムの吸水率は３重量％以
下、好ましくは２重量％以下のものが使用される。その
ため、耐熱性フィルムとしては、Ｔｇ、吸水率、熱膨張
係数の点からポリイミドフィルムが好ましく用いられ
る。特に、Ｔｇが２５０℃以上、吸水率が２重量％以
下、熱膨張係数が３×１０-5／℃以下の物性を備えたポ
リイミドフィルムが好ましい。Examples of the heat-resistant film used herein include films of engineering plastics such as polyimide, polyamide, polysulfone, polyphenylene sulfide, polyether ether ketone, and polyarylate. Glass transition temperature (T
As g), one having a Tg higher than that of the adhesive is used, preferably 200 ° C. or more, more preferably 250 ° C. or more. A heat-resistant film having a water absorption of 3% by weight or less, preferably 2% by weight or less is used. Therefore, a polyimide film is preferably used as the heat-resistant film in terms of Tg, water absorption, and coefficient of thermal expansion. In particular, a polyimide film having physical properties of Tg of 250 ° C. or more, water absorption of 2% by weight or less, and thermal expansion coefficient of 3 × 10 −5 / ° C. or less is preferable.
【００３１】耐熱性フィルムは、接着剤との接着力を増
すために表面処理を施すことが望ましい。表面処理の方
法としては、アルカリ処理、シランカップリング処理等
の化学処理、サンドブラスト等の物理的処理、プラズマ
処理、コロナ処理等のいずれの処理も使用可能である
が、接着剤の種類に応じて最も適した処理を用いればよ
いが、好ましくは、化学処理またはプラズマ処理であ
る。The heat-resistant film is desirably subjected to a surface treatment in order to increase the adhesive strength with the adhesive. As the surface treatment method, any treatment such as alkali treatment, chemical treatment such as silane coupling treatment, physical treatment such as sand blast, plasma treatment, corona treatment, etc. can be used, but depending on the type of adhesive. The most suitable treatment may be used, but preferably a chemical treatment or a plasma treatment.
【００３２】本発明の接着フィルムをリード固定テープ
として用いる場合、耐熱性フィルムの片面に接着剤層を
形成させた接着フィルムが通常用いられるが、その接着
剤層面を保護フィルムで貼り合わせてもよい。When the adhesive film of the present invention is used as a lead fixing tape, an adhesive film having an adhesive layer formed on one surface of a heat-resistant film is usually used, but the adhesive layer surface may be bonded with a protective film. .
【００３３】また、本発明のフィルム状の接着剤や接着
フィルムをリード固定テープ、ＬＯＣテープなどに使用
する場合には、２７０℃で１０分加熱したときに、接着
剤の層の重量減少が加熱前の接着剤の層の重量に対して
１％（重量比）以下であることが好ましい。また、２０
０℃以下で貼り付けた接着フィルム（接着テープ）が２
５０℃で動かないことが好ましい。When the film-like adhesive or the adhesive film of the present invention is used for a lead fixing tape, a LOC tape, or the like, when the adhesive is heated at 270 ° C. for 10 minutes, the weight of the adhesive layer decreases. It is preferably 1% (weight ratio) or less based on the weight of the previous adhesive layer. Also, 20
Adhesive film (adhesive tape) stuck at 0 ° C or less is 2
Preferably, it does not move at 50 ° C.
【００３４】本発明の樹脂組成物又は接着剤には、セラ
ミック粉、ガラス粉、銀粉、銅粉、樹脂粒子、ゴム粒子
等のフィラーや、カップリング剤が添加されてもよい。
カップリング剤としては、ビニルシラン、エポキシシラ
ン、アミノシラン、メルカプトシラン、チタネート、ア
ルミキレート、ジルコアルミネート等のカップリング剤
が使用できるが、シランカップリング剤が好ましい。シ
ランカップリング剤としては、ビニルトリメトキシシラ
ン、ビニルトリエトキシシラン、ビニルトリス（β−メ
トキシエトキシ）シラン、β−（３、４−エポキシシク
ロヘキシル）エチルトリメトキシシラン、γ−グリシド
キシプロピルトリメトキシシラン、γ−グリシドキシプ
ロピルメチルジエトキシシラン、Ｎ−β−（アミノエチ
ル）−γ−アミノプロピルトリメトキシシラン、Ｎ−β
−（アミノエチル）−γ−アミノプロピルメチルジメト
キシシラン、γ−アミノプロピルトリエトキシシラン、
Ｎ−フェニル−γ−アミノプロピルトリメトキシシラ
ン、γ−メルカプトプロピルトリメトキシシラン等の末
端に有機反応性基をもつシランカップリング剤で、これ
らのうちエポキシ基を有するエポキシシラン系カップリ
ング剤が好ましく用いられる。なお、ここで有機反応性
基とは、エポキシ基、ビニル基、アミノ基、メルカプト
基等の官能基である。シランカップリング剤の添加は、
製造される半導体パッケージの耐リフロークラック性や
接着力を向上させるためで、樹脂分の総量１００重量部
に対して、好ましくは１〜１５重量部、更に好ましくは
２〜１０重量部含有させることができる。The resin composition or the adhesive of the present invention may contain fillers such as ceramic powder, glass powder, silver powder, copper powder, resin particles and rubber particles, and coupling agents.
As the coupling agent, a coupling agent such as vinyl silane, epoxy silane, amino silane, mercapto silane, titanate, aluminum chelate and zircoaluminate can be used, but a silane coupling agent is preferable. Examples of the silane coupling agent include vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane Γ-glycidoxypropylmethyldiethoxysilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-β
-(Aminoethyl) -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane,
N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, etc., a silane coupling agent having an organic reactive group at the terminal, and among these, an epoxysilane coupling agent having an epoxy group is preferable. Used. Here, the organic reactive group is a functional group such as an epoxy group, a vinyl group, an amino group, and a mercapto group. The addition of the silane coupling agent
In order to improve the reflow crack resistance and the adhesive strength of the semiconductor package to be manufactured, the content is preferably 1 to 15 parts by weight, more preferably 2 to 10 parts by weight based on 100 parts by weight of the total amount of the resin component. it can.
【００３５】本発明の接着剤又は接着フィルムは、リー
ドフレームのリード固定テープとして使用されるほか、
ＬＯＣパッケージ、従来型パッケージ、ＣＯＬパッケー
ジ、ヒートスプレッダー付パッケージ等の半導体パッケ
ージの接着部材に用いられ、チップとリードフレーム、
リードフレームとヒートスプレッダーの接着に使用する
こともできる。なお、接着剤又は接着フィルムの適用に
よっては、接着時の接着温度を低下させる目的でフィル
ム状接着剤又は接着フィルム中に溶剤を残存させてもよ
い。この場合、残存溶剤量は１０重量％を超えない程度
までとする。The adhesive or the adhesive film of the present invention is used as a lead fixing tape for a lead frame,
Used as an adhesive for semiconductor packages such as LOC package, conventional package, COL package, package with heat spreader, etc.
It can also be used to bond lead frames and heat spreaders. Depending on the application of the adhesive or the adhesive film, a solvent may be left in the film-like adhesive or the adhesive film for the purpose of lowering the bonding temperature at the time of bonding. In this case, the amount of the remaining solvent is set to a level not exceeding 10% by weight.
【００３６】リードフレームのリード固定テープとして
使用した場合の半導体装置は、例えば、次のようにして
製造される。リードフレームのインナーリード部に、所
定の大きさの本発明の接着フィルム片又はフィルム状接
着剤片（接着部材）を１５０〜３００℃、０．０１〜１
０Ｍｐａで、０．１〜１０秒間の条件で熱圧着させた
後、リードフレームのダイパッド部にダイボンド材（銀
ペースト、ダイボンドフィルム等）を載せ、これに半導
体素子を載せて加圧接着させ、その後リードフレームと
半導体素子とを金線等で接合し、エポキシ樹脂等の封止
材で封止し、半導体装置とする（図１）。A semiconductor device when used as a lead fixing tape of a lead frame is manufactured, for example, as follows. An adhesive film piece or a film-like adhesive piece (adhesive member) of the present invention having a predetermined size is attached to the inner lead portion of the lead frame at 150 to 300 ° C. and 0.01 to 1
After thermocompression bonding at 0 Mpa for 0.1 to 10 seconds, a die bonding material (silver paste, die bonding film, or the like) is mounted on a die pad portion of a lead frame, and a semiconductor element is mounted on the die bonding material and pressure-bonded. The lead frame and the semiconductor element are joined with a gold wire or the like, and sealed with a sealing material such as an epoxy resin to obtain a semiconductor device (FIG. 1).
【００３７】また、本発明の接着フィルム（基材フィル
ムの両面に接着剤層）をＬＯＣテープとして用いた半導
体装置の例を図２に、本発明の接着剤又は接着フィルム
（接着部材）を従来型パッケージのリードフレームと半
導体素子との接着に用いた半導体装置の例を図３に、本
発明の接着剤又は接着フィルム（接着部材）をヒートス
プレッダー付パッケージのリードフレームとヒートスプ
レッダーとの接着に用いた半導体装置の例を図４にそれ
ぞれ示した。FIG. 2 shows an example of a semiconductor device using the adhesive film of the present invention (an adhesive layer on both sides of a base film) as a LOC tape. FIG. 3 shows an example of a semiconductor device used for bonding a lead frame of a die package and a semiconductor element. The adhesive or the adhesive film (adhesive member) of the present invention is used for bonding a lead frame of a package with a heat spreader to a heat spreader. FIG. 4 shows examples of the semiconductor devices used.
【００３８】[0038]
【実施例】以下、実施例により本発明を詳細に説明す
る。 実施例１ 攪拌機、温度計、窒素ガス導入管及び留出管を備えた
１，０００ｍｌ四つ口フラスコに、ヘキサンジオールと
過剰量のアジピン酸を減圧下２００℃、５時間熔融反応
して得た平均分子量１，０００の両末端カルボキシ基含
有ポリエステル（ｃ）を６０ｇ、ＢＡＢＴ（ａ）を２５
ｇ、スルホランを５５０ｇ、３−メチル−１−フェニル
−３−ホスホレン−１−オキシド（触媒）を０．３ｇ加
え、窒素雰囲気下、撹拌しながら２００℃に昇温した。
ジフェニルメタンジイソシアネート（ｂ）２５ｇを加え
た後、２００℃で１時間反応させた後、室温まで冷却し
た。得られた反応物（共重合体反応液）をメタノールに
注ぎ、生じた沈殿を分離し、これをミキサーで粉砕し、
水洗した後、乾燥してポリエステル含量５５重量％のポ
リエステルイミド粉末を得た。得られたポリエステルイ
ミド粉末をゲル浸透クロマトグラフィー（以下、ＧＰＣ
と略す；溶離液はＤＭＦ、液速度は１ｍｌ／分、検出は
ＵＶ検出器）を用いて測定したところ、重量平均分子量
はポリスチレン換算で２３０，０００であった。The present invention will be described below in detail with reference to examples. Example 1 Hexanediol and an excess amount of adipic acid were melt-reacted at 200 ° C. for 5 hours under reduced pressure in a 1,000 ml four-necked flask equipped with a stirrer, a thermometer, a nitrogen gas inlet tube and a distilling tube. 60 g of a polyester (c) having a carboxyl group at both ends having an average molecular weight of 1,000, and 25 g of BABT (a)
g, sulfolane (550 g) and 3-methyl-1-phenyl-3-phospholene-1-oxide (catalyst) (0.3 g) were added, and the mixture was heated to 200 ° C. while stirring under a nitrogen atmosphere.
After adding 25 g of diphenylmethane diisocyanate (b), the mixture was reacted at 200 ° C. for 1 hour, and then cooled to room temperature. The resulting reaction product (copolymer reaction solution) was poured into methanol, and the resulting precipitate was separated and crushed with a mixer.
After washing with water, drying was performed to obtain a polyesterimide powder having a polyester content of 55% by weight. The obtained polyesterimide powder is subjected to gel permeation chromatography (hereinafter, GPC).
The eluent was measured using DMF, the liquid speed was 1 ml / min, and the detection was performed using a UV detector, and the weight average molecular weight was 230,000 in terms of polystyrene.
【００３９】このポリエステルイミド粉末の３．０ｇと
γーグリシドキシプロピルトリメトキシシラン〔以下、
ＣＰＬと略す〕の０．１５ｇ（ＣＰＬの量：５重量％）
を秤り取り、これにポリエステルイミド粉末の濃度が２
５重量％となるようにＮ，Ｎ−ジメチルホルムアミドを
加えて溶かし、ワニスを調製した。でき上がりの接着剤
層厚さが２５μｍとなるように、ポリエステルフィルム
上にこのワニスを塗布し、はじめに１００℃、３０分間
加熱したのち、接着剤層をポリエステルフィルムから剥
がし、金枠に止め、更に２５０℃、１０分間加熱して、
厚さ２５μｍの単層のフィルム状接着剤を作製した。こ
のフィルム状接着剤の軟化点（以下、Ｔｇと略す）を動
的粘弾性装置（周波数：１０Ｈｚ、昇温速度：２℃／
分、ｔａｎδピーク値）で測定したところ２５０℃であ
った。また、示差熱天秤（昇温速度：１０℃／分、空気
中）を用いて５％重量減少温度（以下、Ｔｄと略す）を
測定したところ、３７５℃であった。また、２７０℃で
１０分間保持した際の重量減少は０．３重量％であっ
た。3.0 g of this polyesterimide powder and γ-glycidoxypropyltrimethoxysilane [hereinafter referred to as “gamma-glycidoxypropyltrimethoxysilane”
0.15 g (abbreviated as CPL) (Amount of CPL: 5% by weight)
And the concentration of the polyesterimide powder is 2
N, N-dimethylformamide was added and dissolved at 5% by weight to prepare a varnish. This varnish is applied on a polyester film so that the thickness of the finished adhesive layer is 25 μm, and after first heating at 100 ° C. for 30 minutes, the adhesive layer is peeled off from the polyester film, fixed to a metal frame, and further removed by a metal frame. ℃ 10 minutes,
A single-layer film adhesive having a thickness of 25 μm was prepared. The softening point (hereinafter abbreviated as Tg) of this film adhesive is determined by a dynamic viscoelasticity device (frequency: 10 Hz, heating rate: 2 ° C. /
Min, tan δ peak value). The 5% weight loss temperature (hereinafter abbreviated as Td) was measured using a differential thermobalance (heating rate: 10 ° C./min, in air), and was 375 ° C. The weight loss when held at 270 ° C. for 10 minutes was 0.3% by weight.
【００４０】別に、でき上がりの接着剤層厚さが２５μ
ｍとなるように、上記ワニスを５０μｍ厚の耐熱性ポリ
イミドフィルム（宇部興産（株）製、ユーピレックス
Ｓ）の片面に塗布し、前記同様に加熱処理して、基材フ
ィルム付接着テープを得た。得られた基材フィルム付接
着テープを１０ｍｍ×２０ｍｍの大きさに切断し、これ
を接着剤層が接するようにリードフレーム材である銅合
金に、温度：１８０℃、圧力：３ＭＰａ及び時間：３秒
の条件で圧着させたのち、ＪＩＳ Ｃ６４８１に準じて
９０度引き剥し強さ（測定温度：２５℃、引っ張り速
度：５０ｍｍ／分）を測定したところ、８００Ｎ／ｍで
あった。また、接着温度を７０℃及び１５０℃とした場
合の引き剥がし強さは、それぞれ２００Ｎ／ｍ及び７５
０Ｎ／ｍであった。６０μｍ／６０μｍ（ライン／スペ
ース）の櫛型パターンが形成された２層フレキシブル配
線板の櫛型パターン部に上記基材フィルム付接着テープ
を貼り付け、１５６℃、８５％ＲＨ、５Ｖ印加の条件で
抵抗値を測定したところ、４００ｈ後でも１×１０
13（ohm）以上であった。更に、１８０℃で接着させた
基材フィルム付接着テープを２５０℃の熱盤上に置き、
ピンセットで斜め上方から押したところこのテープは動
かなかった。また、前記の基材フィルム付接着テープを
用い、図１に示す半導体装置（パッケージ）を作製し
た。これを８５℃、８５％ＲＨで４８時間吸湿させたの
ち、赤外線リフローを行ったがパッケージクラックは生
じなかった。Separately, the thickness of the finished adhesive layer is 25 μm.
m, the varnish was applied to one surface of a heat-resistant polyimide film (upilex S, manufactured by Ube Industries, Ltd.) having a thickness of 50 μm, and heat-treated in the same manner as above to obtain an adhesive tape with a base film. . The obtained adhesive tape with a base film was cut into a size of 10 mm × 20 mm, and this was cut into a copper alloy as a lead frame material so as to be in contact with the adhesive layer, at a temperature of 180 ° C., a pressure of 3 MPa and a time of 3 hours. After pressure bonding under the condition of seconds, the 90-degree peel strength (measuring temperature: 25 ° C., tensile speed: 50 mm / min) was measured according to JIS C6481, and it was 800 N / m. When the bonding temperature was 70 ° C. and 150 ° C., the peel strength was 200 N / m and 75 N, respectively.
It was 0 N / m. The above-mentioned adhesive tape with a base film is attached to the comb-shaped pattern portion of the two-layer flexible wiring board on which a 60 μm / 60 μm (line / space) comb-shaped pattern is formed, under the conditions of 156 ° C., 85% RH, and 5 V applied. When the resistance value was measured, it was 1 × 10 even after 400 hours.
13 (ohm) or more. Furthermore, the adhesive tape with the base film adhered at 180 ° C. is placed on a hot plate at 250 ° C.,
The tape did not move when pressed diagonally from above with tweezers. Further, a semiconductor device (package) shown in FIG. 1 was manufactured using the above-mentioned adhesive tape with a base film. After this was made to absorb moisture at 85 ° C. and 85% RH for 48 hours, infrared ray reflow was performed, but no package crack occurred.
【００４１】実施例２ ポリエステル（ｃ）の使用量を４０重量％〔ｃ／（ａ＋
ｂ＋ｃ）〕としたほかは実施例１と同じようにして、反
応物（共重合体）を得た。得られたポリエステルイミド
の分子量は１９８，０００であり、得られたフィルム状
接着剤のＴｇ及びＴｄはそれぞれ２５５℃及び３８０℃
であった。また、２７０℃で１０分間加熱した際の重量
減少は０．２５重量％であった。次に、ＣＰＬを３重量
％添加する以外は実施例１と同様にして、基材フィルム
付接着テープを作製し、実施例１と同じように試験し
た。基材フィルム付接着テープを銅合金に圧着させたと
きの９０度引き剥がし強さは６００Ｎ／ｍで、接着温度
を７０℃及び１５０℃とした場合の引き剥がし強さはそ
れぞれ５０Ｎ／ｍ及び５００Ｎ／ｍであった。６０μｍ
／６０μｍ（ライン／スペース）の櫛型パターンが形成
された２層フレキシブル配線板の櫛型パターン部に上記
基材フィルム付接着テープをを貼り付け、１５６℃、８
５％ＲＨ、５Ｖ印加の条件で抵抗値を測定したところ、
４００ｈ後でも１×１０13（ohm）以上であった。１８
０℃で接着させた基材フィルム付接着テープを２５０℃
の熱盤上に置き、ピンセットで斜め上方から押したとこ
ろテープは動かなかった。Example 2 The amount of the polyester (c) was changed to 40% by weight [c / (a +
b + c)], except that a reaction product (copolymer) was obtained. The molecular weight of the obtained polyesterimide was 198,000, and the Tg and Td of the obtained film adhesive were 255 ° C. and 380 ° C., respectively.
Met. The weight loss when heated at 270 ° C. for 10 minutes was 0.25% by weight. Next, an adhesive tape with a base film was prepared in the same manner as in Example 1 except that 3% by weight of CPL was added, and tested in the same manner as in Example 1. The 90 degree peel strength when the adhesive tape with the base film is pressed against the copper alloy is 600 N / m, and the peel strength when the bonding temperature is 70 ° C. and 150 ° C. is 50 N / m and 500 N, respectively. / M. 60 μm
The above-mentioned adhesive tape with a base film is attached to the comb-shaped pattern portion of the two-layer flexible wiring board on which a / 60 μm (line / space) comb-shaped pattern is formed.
When the resistance was measured under the conditions of 5% RH and 5 V applied,
It was 1 × 10 13 (ohm) or more even after 400 hours. 18
250 ° C adhesive tape with base film bonded at 0 ° C
The tape did not move when it was placed on a hot plate and pressed diagonally from above with tweezers.
【００４２】実施例３ ポリエステル（ｃ）の使用量を４８重量％〔ｃ／（ａ＋
ｂ＋ｃ）〕としたほかは実施例１と同じようにして、反
応物（共重合体）を得た。得られたポリエステルイミド
の分子量は２０５，０００であり、得られたフィルム状
接着剤のＴｇ及びＴｄはそれぞれ２５０℃及び３７５℃
であった。また、２７０℃で１０分間加熱した際の重量
減少は０．３重量％であった。得られた樹脂をシクロヘ
キサノンに溶解してワニスとし、ユーピレックスの代わ
りに東レ−デュポン（株）製のカプトンＨを用いたほか
は、以下実施例１と同様にして基材フィルム付接着テー
プを作製した。これを銅合金に圧着させたときの９０度
引き剥がし強さは７００Ｎ／ｍで、接着温度を７０℃及
び１５０℃とした場合の引き剥がし強さはそれぞれ１０
０Ｎ／ｍ及び６５０Ｎ／ｍであった。６０μｍ／６０μ
ｍ（ライン／スペース）の櫛型パターンが形成された２
層フレキシブル配線板の櫛型パターン部に上記基材フィ
ルム付接着テープをを貼り付け、１５６℃、８５％Ｒ
Ｈ、５Ｖ印加の条件で抵抗値を測定したところ、４００
ｈ後でも１×１０13（ohm）以上であった。１８０℃で
接着させた基材フィルム付接着テープを２５０℃の熱盤
上に置き、ピンセットで斜め上方から押したところテー
プは動かなかった。Example 3 The amount of the polyester (c) used was 48% by weight [c / (a +
b + c)], except that a reaction product (copolymer) was obtained. The molecular weight of the obtained polyesterimide was 205,000, and the Tg and Td of the obtained film adhesive were 250 ° C. and 375 ° C., respectively.
Met. The weight loss when heated at 270 ° C. for 10 minutes was 0.3% by weight. The resulting resin was dissolved in cyclohexanone to form a varnish, and an adhesive tape with a base film was prepared in the same manner as in Example 1 except that Kapton H manufactured by Toray-Dupont was used instead of Iupirex. . The 90-degree peel strength when this was pressed against a copper alloy was 700 N / m, and the peel strength when the bonding temperature was 70 ° C. and 150 ° C. was 10 respectively.
It was 0 N / m and 650 N / m. 60μm / 60μ
m (line / space) comb-shaped pattern 2
Affixing the adhesive tape with the base film to the comb pattern portion of the layer flexible wiring board, 156 ° C., 85% R
When the resistance was measured under the conditions of H and 5 V applied, 400
After 1 hour, it was 1 × 10 13 (ohm) or more. The adhesive tape with the base film adhered at 180 ° C. was placed on a hot plate at 250 ° C. and pressed with a pair of tweezers from an obliquely upper side, and the tape did not move.
【００４３】実施例４ 分子量２，０００のポリエステルを８０ｇ、及びＢＡＢ
Ｔを３４．６ｇ用いたほかは実施例１と同じようにして
反応物（共重合体）、接着剤、フィルム状接着剤、基材
フィルム付接着テープ及び半導体装置を製造し、実施例
１と同じように試験した。得られたポリエステルイミド
の分子量は１７５，０００であり、得られたフィルム状
接着剤のＴｇ及びＴｄはそれぞれ２４０℃及び３６５℃
であった。また、２７０℃で１０分間加熱した際の重量
減少は０．２重量％であった。また耐熱性接着剤層付き
フィルムを銅合金に圧着させたときの９０度引き剥がし
強さは７５０Ｎ／ｍで、接着温度を７０℃、１５０℃に
した場合の引き剥がし強さはそれぞれ１８０Ｎ／ｍ、７
００Ｎ／ｍであった。６０μｍ／６０μｍ（ライン／ス
ペース）の櫛型パターンが形成された２層フレキシブル
配線板の櫛型パターン部に上記基材フィルム付接着テー
プをを貼り付け、１５６℃、８５％ＲＨ、５Ｖ印加の条
件で抵抗値を測定したところ、４００ｈ後でも１×１０
13（ohm）以上であった。１８０℃で接着したテープを
２５０℃の熱盤上に置き、ピンセットで斜め上方から押
したところテープは動かなかった。得られた耐熱性接着
剤層付きフィルムを用いて作製した半導体装置を８５
℃、８５％ＲＨで４８時間吸湿させたのち、赤外線リフ
ローを行ったがパッケージクラックは生じなかった。Example 4 80 g of a polyester having a molecular weight of 2,000 and BAB
A reactant (copolymer), an adhesive, a film-like adhesive, an adhesive tape with a base film, and a semiconductor device were produced in the same manner as in Example 1 except that 34.6 g of T was used. Tested similarly. The molecular weight of the obtained polyesterimide is 175,000, and the Tg and Td of the obtained film adhesive are 240 ° C. and 365 ° C., respectively.
Met. The weight loss when heated at 270 ° C. for 10 minutes was 0.2% by weight. The 90-degree peel strength when the film with a heat-resistant adhesive layer was pressed against a copper alloy was 750 N / m, and the peel strength when the bonding temperature was 70 ° C. and 150 ° C. was 180 N / m, respectively. , 7
00N / m. The adhesive tape with the base film is adhered to the comb pattern portion of the two-layer flexible wiring board on which the 60 μm / 60 μm (line / space) comb pattern is formed, and the conditions are 156 ° C., 85% RH, and 5 V applied. The resistance was measured at 1 × 10 even after 400 hours.
13 (ohm) or more. When the tape adhered at 180 ° C. was placed on a hot plate at 250 ° C. and pressed from obliquely above with tweezers, the tape did not move. A semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was 85
After moisture absorption at 85 ° C. and 85% RH for 48 hours, infrared ray reflow was performed, but no package crack occurred.
【００４４】実施例５ アジピン酸とネオペンチルグリコールからなる分子量
１，３００のカルボキシ末端ポリエステルを用いた以外
は実施例１と同様にして反応物（共重合体）、接着剤、
フィルム状接着剤、基材フィルム付接着テープ及び半導
体装置を製造し、実施例１と同じように試験した。得ら
れたポリエステルイミドの分子量は１５５，０００であ
り、得られたフィルム状接着剤のＴｇ及びＴｄはそれぞ
れ２３５℃及び３７０℃であった。また、２７０℃で１
０分間加熱した際の重量減少は０．２５重量％であっ
た。Example 5 A reaction product (copolymer), an adhesive, and the like were prepared in the same manner as in Example 1 except that a carboxy-terminated polyester having a molecular weight of 1,300 comprising adipic acid and neopentyl glycol was used.
A film adhesive, an adhesive tape with a base film, and a semiconductor device were manufactured and tested in the same manner as in Example 1. The molecular weight of the obtained polyesterimide was 155,000, and the Tg and Td of the obtained film adhesive were 235 ° C and 370 ° C, respectively. Also, at 270 ° C, 1
The weight loss upon heating for 0 minutes was 0.25% by weight.
【００４５】また基材フィルム付接着テープを銅合金に
圧着させたときの９０度引き剥がし強さは７００Ｎ／ｍ
で、接着温度を７０℃及び１５０℃とした場合の引き剥
がし強さはそれぞれ１３０Ｎ／ｍ及び６２０Ｎ／ｍであ
った。６０μｍ／６０μｍ（ライン／スペース）の櫛型
パターンが形成された２層フレキシブル配線板の櫛型パ
ターン部に上記基材フィルム付接着テープをを貼り付
け、１５６℃、８５％ＲＨ、５Ｖ印加の条件で抵抗値を
測定したところ、４００ｈ後でも１×１０13（ohm）以
上であった。１８０℃で接着したテープを２５０℃の熱
盤上に置き、ピンセットで斜め上方から押したところテ
ープは動かなかった。得られた基材フィルム付接着テー
プを用いて作製した半導体装置を８５℃、８５％ＲＨで
４８時間吸湿させたのち、赤外線リフローを行ったがパ
ッケージクラックは生じなかった。The 90-degree peel strength when the adhesive tape with the base film was pressed against a copper alloy was 700 N / m.
When the bonding temperature was 70 ° C. and 150 ° C., the peel strength was 130 N / m and 620 N / m, respectively. The adhesive tape with the base film is adhered to the comb pattern portion of the two-layer flexible wiring board on which the 60 μm / 60 μm (line / space) comb pattern is formed, and the conditions are 156 ° C., 85% RH, and 5 V applied. The resistance was 1 × 10 13 (ohm) or more even after 400 hours. When the tape adhered at 180 ° C. was placed on a hot plate at 250 ° C. and pressed from obliquely above with tweezers, the tape did not move. After the semiconductor device manufactured using the obtained adhesive tape with a base film was absorbed at 85 ° C. and 85% RH for 48 hours, infrared ray reflow was performed, but no package crack occurred.
【００４６】実施例６ ＢＡＢＴのかわりにＥＢＴＡを用いる以外は実施例１と
同様にして、反応物（共重合体）、接着剤、フィルム状
接着剤及び基材フィルム付接着テープを製造し、実施例
１と同じように試験した。得られたポリエステルイミド
の分子量は２１０，０００であり、得られたフィルム状
接着剤のＴｇ及びＴｄはそれぞれ２２０℃及び３７０℃
であった。また、２７０℃で１０分間加熱した際の重量
減少は０．３０重量％であった。また基材フィルム付接
着テープを銅合金に圧着させたときの９０度引き剥がし
強さは７００Ｎ／ｍで、接着温度を７０℃及び１５０℃
とした場合の引き剥がし強さはそれぞれ１５０Ｎ／ｍ及
び６５０Ｎ／ｍであった。６０μｍ／６０μｍ（ライン
／スペース）の櫛型パターンが形成された２層フレキシ
ブル配線板の櫛型パターン部に上記基材フィルム付接着
テープをを貼り付け、１５６℃、８５％ＲＨ、５Ｖ印加
の条件で抵抗値を測定したところ、４００ｈ後でも１×
１０13（ohm）以上であった。Example 6 A reactant (copolymer), an adhesive, a film adhesive and an adhesive tape with a base film were produced in the same manner as in Example 1 except that EBTA was used instead of BABT. Tested as in Example 1. The molecular weight of the obtained polyesterimide is 210,000, and the Tg and Td of the obtained film adhesive are 220 ° C. and 370 ° C., respectively.
Met. The weight loss when heated at 270 ° C. for 10 minutes was 0.30% by weight. When the adhesive tape with a base film is pressed against a copper alloy, the 90-degree peel strength is 700 N / m, and the adhesive temperature is 70 ° C. and 150 ° C.
The peel strength was 150 N / m and 650 N / m, respectively. The adhesive tape with the base film is adhered to the comb pattern portion of the two-layer flexible wiring board on which the 60 μm / 60 μm (line / space) comb pattern is formed, and the conditions are 156 ° C., 85% RH, and 5 V applied. The resistance was measured at 1 × even after 400 hours.
It was 10 13 (ohm) or more.
【００４７】実施例７ ジフェニルメタンジイソシアネートの代わりにヘキサメ
チレンジイソシアネート用いる以外は実施例１と同様に
して、反応物（共重合体）、接着剤、フィルム状接着剤
及び基材フィルム付接着テープを製造し、実施例１と同
じように試験した。得られたポリエステルイミドの分子
量は１５０，０００であり、得られたフィルム状接着剤
のＴｇ及びＴｄはそれぞれ２００℃及び３６０℃であっ
た。また、２７０℃で１０分間加熱した際の重量減少は
０．４０重量％であった。また基材フィルム付接着テー
プを銅合金に圧着させたときの９０度引き剥がし強さは
６００Ｎ／ｍで、接着温度を７０℃及び１５０℃にした
場合の引き剥がし強さはそれぞれ８０Ｎ／ｍ及び５５０
Ｎ／ｍであった。６０μｍ／６０μｍ（ライン／スペー
ス）の櫛型パターンが形成された２層フレキシブル配線
板の櫛型パターン部に上記基材フィルム付接着テープを
を貼り付け、１５６℃、８５％ＲＨ、５Ｖ印加の条件で
抵抗値を測定したところ、４００ｈ後でも１×１０
13（ohm）以上であった。Example 7 A reactant (copolymer), an adhesive, a film adhesive and an adhesive tape with a base film were produced in the same manner as in Example 1 except that hexamethylene diisocyanate was used instead of diphenylmethane diisocyanate. The test was performed in the same manner as in Example 1. The molecular weight of the obtained polyesterimide was 150,000, and the Tg and Td of the obtained film adhesive were 200 ° C. and 360 ° C., respectively. The weight loss when heated at 270 ° C. for 10 minutes was 0.40% by weight. The 90-degree peel strength when the adhesive tape with the base film was pressed against the copper alloy was 600 N / m, and the peel strength when the bonding temperature was 70 ° C. and 150 ° C. was 80 N / m, respectively. 550
N / m. The adhesive tape with the base film is adhered to the comb pattern portion of the two-layer flexible wiring board on which the 60 μm / 60 μm (line / space) comb pattern is formed, and the conditions are 156 ° C., 85% RH, and 5 V applied. The resistance was measured at 1 × 10 even after 400 hours.
13 (ohm) or more.
【００４８】比較例１ アクリルニトリルブタジエンゴムとフェノール樹脂を主
成分としてなる熱硬化性樹脂を接着剤として用い、フィ
ルム状接着剤を製造した。以下、実施例１と同じように
して基材フィルム付接着テープを作製し、試験した。２
７０℃で１０分間加熱した際の重量減少は２．３重量％
であった。また得られた基材フィルム付接着テープを銅
合金に圧着させたときの９０度引き剥がし強さは８００
Ｎ／ｍで、接着温度を７０℃及び１５０℃とした場合の
引き剥がし強さはそれぞれ５０Ｎ／ｍ及び７５０Ｎ／ｍ
であった。６０μｍ／６０μｍ（ライン／スペース）の
櫛型パターンが形成された２層フレキシブル配線板の櫛
型パターン部に上記基材フィルム付接着テープをを貼り
付け、１５６℃、８５％ＲＨ、５Ｖ印加の条件で抵抗値
を測定したところ、２００ｈ後には１×１０7（ohm）以
下であった。Comparative Example 1 A film-like adhesive was produced by using an acrylic nitrile-butadiene rubber and a thermosetting resin mainly composed of a phenol resin as an adhesive. Hereinafter, an adhesive tape with a base film was prepared and tested in the same manner as in Example 1. 2
2.3% by weight when heated at 70 ° C for 10 minutes
Met. The 90-degree peel strength when the obtained adhesive tape with a base film was pressed against a copper alloy was 800.
N / m, the peel strength when the bonding temperature was 70 ° C. and 150 ° C. was 50 N / m and 750 N / m, respectively.
Met. The adhesive tape with the base film is adhered to the comb pattern portion of the two-layer flexible wiring board on which the 60 μm / 60 μm (line / space) comb pattern is formed, and the conditions are 156 ° C., 85% RH, and 5 V applied. The resistance was measured at 1 × 10 7 (ohm) or less after 200 hours.
【００４９】[0049]
【発明の効果】請求項１〜３の樹脂組成物は、請求項４
〜８の接着剤及び請求項９、１０の接着フィルムの原料
となる。請求項４〜６の接着剤は、耐熱性に優れ、電子
部品の接着に用いられる。請求項７、８の接着剤及び請
求項９、１０の接着フィルムは、耐熱性に優れ、アウト
ガスが少なく、ＬＯＣテープ、リード固定テープ等の電
子部品の接着テープとして好適である。請求項１１のリ
ードフレームを用いて製造される請求項１２の半導体装
置は、信頼性が高い。The resin composition according to any one of claims 1 to 3,
To 8 and the raw materials for the adhesive films of claims 9 and 10. The adhesive according to claims 4 to 6 has excellent heat resistance and is used for bonding electronic components. The adhesives according to claims 7 and 8 and the adhesive films according to claims 9 and 10 have excellent heat resistance and low outgassing, and are suitable as adhesive tapes for electronic components such as LOC tapes and lead fixing tapes. The semiconductor device according to claim 12 manufactured using the lead frame according to claim 11 has high reliability.
【図１】本発明の接着フィルムをリード固定テープとし
て用いた半導体装置の例を示す断面模式図である。FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor device using an adhesive film of the present invention as a lead fixing tape.
【図２】本発明の接着フィルムをＬＯＣテープとして用
いた半導体装置の例を示す断面模式図である。FIG. 2 is a schematic cross-sectional view showing an example of a semiconductor device using the adhesive film of the present invention as a LOC tape.
【図３】本発明の接着剤又は接着フィルム（接着部材）
を従来型パッケージのリードフレームと半導体素子との
接着に用いた半導体装置の例を示す断面模式図である。FIG. 3 shows the adhesive or adhesive film (adhesive member) of the present invention.
FIG. 3 is a schematic cross-sectional view showing an example of a semiconductor device used for bonding a semiconductor element to a lead frame of a conventional package.
【図４】本発明の接着剤又は接着フィルム（接着部材）
をヒートスプレッダー付パッケージのリードフレームと
ヒートスプレッダーとの接着に用いた半導体装置の例を
示す断面模式図である。FIG. 4 is an adhesive or adhesive film (adhesive member) of the present invention.
FIG. 2 is a schematic cross-sectional view showing an example of a semiconductor device used for bonding a lead frame of a package with a heat spreader to a heat spreader.
１…本発明の接着部材 ２…半導体素子 ３…リードフレーム ４…ワイヤ ５…封止材 ６…ダイボンド材 ７…ヒートスプレッダー DESCRIPTION OF SYMBOLS 1 ... Adhesive member of this invention 2 ... Semiconductor element 3 ... Lead frame 4 ... Wire 5 ... Sealant 6 ... Die bond material 7 ... Heat spreader
Claims (12)
（ｂ）ジアミン又はジイソシアネート；と（ｃ）ポリエ
ステル；の含有物を反応させて得られる共重合体を含む
樹脂組成物。1. A resin composition comprising a copolymer obtained by reacting (a) tetracarboxylic dianhydride; (b) diamine or diisocyanate; and (c) polyester.
の合計重量に対して３０〜７０％である、請求項１の樹
脂組成物。2. The weight of (c) is (a) + (b) + (c)
The resin composition according to claim 1, which is 30 to 70% based on the total weight of the resin composition.
レングリコールビストリメリテート二無水物、デカメチ
レングリコールビストリメリテート二無水物及びビスフ
ェノールＡビストリメリテート二無水物から選ばれるテ
トラカルボン酸二無水物を、テトラカルボン酸二無水物
の総量に対して５０モル％以上含むものである、請求項
１又は２のいずれかの樹脂組成物。3. The tetracarboxylic dianhydride (a) is a tetracarboxylic dianhydride selected from ethylene glycol bistrimellitate dianhydride, decamethylene glycol bistrimellitate dianhydride and bisphenol A bistrimellitate dianhydride. The resin composition according to claim 1, wherein the anhydride contains 50 mol% or more based on the total amount of tetracarboxylic dianhydride.
（ｂ）ジアミン又はジイソシアネート；と（ｃ）ポリエ
ステル；の含有物を反応させて得られる共重合体を含む
接着剤。4. An adhesive containing a copolymer obtained by reacting the contents of (a) tetracarboxylic dianhydride; (b) diamine or diisocyanate; and (c) polyester.
の合計重量に対して３０〜７０％である、請求項４の接
着剤。5. The weight of (c) is (a) + (b) + (c)
The adhesive according to claim 4, which is 30 to 70% based on the total weight of the adhesive.
レングリコールビストリメリテート二無水物、デカメチ
レングリコールビストリメリテート二無水物及びビスフ
ェノールＡビストリメリテート二無水物から選ばれるテ
トラカルボン酸二無水物を、テトラカルボン酸二無水物
の総量に対して５０モル％以上含むものである、請求項
４又は５のいずれかの接着剤。6. The tetracarboxylic dianhydride (a) is a tetracarboxylic dianhydride selected from ethylene glycol bistrimellitate dianhydride, decamethylene glycol bistrimellitate dianhydride and bisphenol A bistrimellitate dianhydride. The adhesive according to claim 4, wherein the anhydride contains 50 mol% or more based on the total amount of the tetracarboxylic dianhydride.
んでなるフィルム状の接着剤。7. A film-like adhesive comprising the adhesive layer according to claim 4.
剤の層の重量減少が加熱前の接着剤の層の重量に対して
１％（重量比）以下である、請求項７のフィルム状の接
着剤。8. The film of claim 7, wherein when heated at 270 ° C. for 10 minutes, the weight loss of the adhesive layer is less than 1% (weight ratio) based on the weight of the adhesive layer before heating. Glue.
項４〜６のいずれかの接着剤の層が形成されている接着
フィルム。9. An adhesive film wherein the adhesive layer according to claim 4 is formed on at least one surface of the heat-resistant film.
着剤の層の重量減少が加熱前の接着剤の層の重量に対し
て１％（重量比）以下である、請求項９の接着フィル
ム。10. The adhesive of claim 9, wherein when heated at 270 ° C. for 10 minutes, the weight loss of the adhesive layer is less than 1% (weight ratio) based on the weight of the adhesive layer before heating. the film.
９もしくは１０の接着フィルムが貼り付けられているリ
ードフレーム。11. A lead frame to which the adhesive according to claim 7 or 8 or the adhesive film according to claim 9 or 10 is attached.
なくとも接着部材部分は封止材で封止されている半導体
装置。12. A semiconductor device comprising the lead frame according to claim 11, wherein at least an adhesive member is sealed with a sealing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02457697A JP3988058B2 (en) | 1997-02-07 | 1997-02-07 | Semiconductor resin composition, semiconductor adhesive, adhesive film, lead frame and semiconductor device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02457697A JP3988058B2 (en) | 1997-02-07 | 1997-02-07 | Semiconductor resin composition, semiconductor adhesive, adhesive film, lead frame and semiconductor device using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10219109A true JPH10219109A (en) | 1998-08-18 |
| JP3988058B2 JP3988058B2 (en) | 2007-10-10 |
Family
ID=12142002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02457697A Expired - Fee Related JP3988058B2 (en) | 1997-02-07 | 1997-02-07 | Semiconductor resin composition, semiconductor adhesive, adhesive film, lead frame and semiconductor device using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3988058B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000036502A (en) * | 1998-07-17 | 2000-02-02 | Sony Corp | Bonding material and bonded object |
| JP2000256628A (en) * | 1999-03-08 | 2000-09-19 | Hitachi Chem Co Ltd | Adhesive material film, semiconductor mounting external connecting member, semiconductor device and their production |
| JP2001200232A (en) * | 2000-01-14 | 2001-07-24 | Hitachi Chem Co Ltd | Adhesive, adhesive film and semiconductor apparatus by use thereof |
| JP2006265304A (en) * | 2005-03-22 | 2006-10-05 | Tokai Rubber Ind Ltd | Adhesive composition and flexible printed circuit board produced by using the same |
| JP2021091873A (en) * | 2019-12-02 | 2021-06-17 | 日本メクトロン株式会社 | Adhesive film and flexible printed board |
-
1997
- 1997-02-07 JP JP02457697A patent/JP3988058B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000036502A (en) * | 1998-07-17 | 2000-02-02 | Sony Corp | Bonding material and bonded object |
| JP2000256628A (en) * | 1999-03-08 | 2000-09-19 | Hitachi Chem Co Ltd | Adhesive material film, semiconductor mounting external connecting member, semiconductor device and their production |
| JP2001200232A (en) * | 2000-01-14 | 2001-07-24 | Hitachi Chem Co Ltd | Adhesive, adhesive film and semiconductor apparatus by use thereof |
| JP2006265304A (en) * | 2005-03-22 | 2006-10-05 | Tokai Rubber Ind Ltd | Adhesive composition and flexible printed circuit board produced by using the same |
| JP2021091873A (en) * | 2019-12-02 | 2021-06-17 | 日本メクトロン株式会社 | Adhesive film and flexible printed board |
| CN112996227A (en) * | 2019-12-02 | 2021-06-18 | 日本梅克特隆株式会社 | Adhesive film and flexible printed board |
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| JP3988058B2 (en) | 2007-10-10 |
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