JP3161253B2 - Resin composition, heat-resistant adhesive, heat-resistant film with heat-resistant adhesive layer, and semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a resin composition, a heat-resistant adhesive, a heat-resistant film with a heat-resistant adhesive layer, and a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a thermosetting adhesive such as an epoxy-based or rubber-modified epoxy-based or a heat-resistant hot-melt adhesive such as a polyimide or a polyamideimide has been used for joining a semiconductor lead frame and a semiconductor element. Have been.
Epoxy-based and rubber-modified epoxy-based adhesives have excellent adhesive strength, but have drawbacks in heat resistance and also have a problem of contamination of semiconductor elements due to outgassing. The heat-resistant hot-melt adhesive does not generate outgas and does not contaminate the semiconductor element. However, since the bonding temperature for obtaining sufficient adhesive strength is high, there are problems such as damage to the semiconductor element and thermal deterioration due to thermal stress.

[0003]

These problems have become more serious as the size of semiconductor devices has increased due to the increase in density and thickness of semiconductor packages. In addition, package cracks that occur at the time of solder connection frequently occur. The present invention relates to a heat-resistant adhesive, a film with a heat-resistant adhesive layer, a semiconductor device, and a semiconductor device, which can be bonded at a low temperature of about 400 ° C. or less, have excellent adhesiveness and wettability, and have excellent reflow crack resistance. It is intended to provide a resin composition which enables the following.

[0004]

According to one aspect of the present invention, there is provided (A) a formula (I)

Embedded image [In the formula (I), R ₁ and R ₂ each independently represent hydrogen or an alkyl group having 1 to 4 carbon atoms, and n represents an integer of 1 to 30. Polyamideimide having a repeating unit of
And (C) a silane coupling agent having an organic reactive group,
It is a resin composition characterized by containing. Here, the (C) silane coupling agent contains 1 to 15% by weight based on the total weight of the resin composition (that is, the total weight of A + C).

Another aspect of the present invention is to provide (A) the polyamideimide of the above (A),
2 to 50 mol% of the imidoimide , (B) Formula (II)

Embedded image [In the formula (II), R represents a divalent organic group having an aromatic or alicyclic group, or a compound represented by the formula (III)

Embedded image (However, in the formula (III), R ₃ and R ₄ are divalent organic groups,
R _{5 to} R ₈ represent a monovalent organic group, and m represents an integer of 1 to 100. ) Represents a divalent organic group. The polyamideimide having a repeating unit of 50 to 98 mol of the total polyamideimide
% , And (C) 1 to 15% by weight of a silane coupling agent having an organic reactive group. Here, the above-mentioned polyamideimide (B) contains 50 to 98 mol % with respect to the total polyamideimide (that is, A + B) in a molar ratio. In addition, the silane coupling agent (C) is used in the total weight of the resin composition (ie, A
+ B + C) (1 to 15% by weight). The above-mentioned or the above-mentioned resin composition comprises, in addition to the above-mentioned polyamideimide (A), the above-mentioned polyamideimide (B) or the above-mentioned silane coupling agent (C), an organic solvent used for the reaction or an organic solvent added for dilution May be included.

Further, the present invention provides a heat-resistant adhesive obtained by heating any of the above resin compositions at a temperature at which the polyamideimide (A or B) and the silane coupling agent (C) react. It is.

Further, the present invention provides the above-mentioned heat-resistant adhesive, which is characterized in that the shape is a film.

Further, the present invention is a heat-resistant film with a heat-resistant adhesive layer, characterized in that a heat-resistant adhesive layer for a semiconductor is formed on one or both surfaces of the heat-resistant film.

Still further, the present invention is a semiconductor device characterized in that the lead frame and the semiconductor element are adhered with one of the above or any of the above-mentioned heat-resistant adhesives.

In the present invention, the polyamide imide (A) having a repeating unit of the formula (I) is represented by the formula (IV)

Embedded image And trimellitic anhydride or a derivative thereof such as monochloride represented by the formula (V):

Embedded image [In the formula (V), Y is an amino group or an isocyanate group, R ₁ and R ₂ each independently represent hydrogen or an alkyl group having 1 to 4 carbon atoms, and n represents an integer of 1 to 30. And a diamine or diisocyanate represented by the following formula:

Examples of the diamine of the formula (V) include 1,2-diaminopropane, 1,3-diaminopropane, and 1,2-diaminopropane.
Diamino-2-methylpropane, 1,4-diaminobutane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1, There are 12-diaminododecane and the like, among which 1,6-diaminohexane, 1,10-diaminodecane and 1,12-diaminododecane are preferable, and 1,12-diaminododecane is particularly preferable.

As the diisocyanate of the formula (V), there can be mentioned those obtained by replacing "amino" with "isocyanato" in the above diamines.
Diisocyanato, 1,3-diisocyanato-propane, 1,2 - di-isocyanato-2-methylpropane,
1,4 - diisocyanato butane, 1,6 - diisocyanatohexane, 1,7 - diisocyanato heptane, 1,8
- diisocyanato octane, 1,9 - diisocyanato nonane, 1,10 - diisocyanato-decane, 1,12 - is di <br/> diisocyanato dodecane. 1,6 of these
- diisocyanatohexane, 1,10 - diisocyanato-decane, 1,12 - diisocyanato dodecane are preferred, 1,12 - diisocyanato dodecane are especially preferred.

For the purpose of lowering the bonding temperature by lowering the glass transition temperature of the adhesive, or improving the reflow crack resistance of the adhesive, trimellitic anhydride of the formula (IV) or its monochloride And a derivative of the formula (V)
When reacting with a diamine or diisocyanate of,
In addition to the diamine or diisocyanate of the above formula (V), the following formula (VI) or (VII)

Embedded image H ₂ N—R—NH ₂ (VI) OCN—R—NCO (VII) (In the formula (VI) or (VII), R is a divalent organic group having an aromatic or alicyclic group.) Or a divalent organic group of the formula (III)). When the diamine or diisocyanate of the formula (VI) or (VII) is added, the amount of the diamine or diisocyanate is 99 mol% or less, preferably 50 to 98 mol%, more preferably 60 to 95 mol%, based on the total diamine or diisocyanate. . By using this, it is possible to lowering the contact bonding temperature of the adhesive, and may also be improved reflow crack resistance.

The diamine of the above formula (VI) includes 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylsulfone, 4,4'-diaminobenzanilide, 3,3 '-Diaminodiphenylsulfone, 3,3'-diaminobenzophenone, 1,4-bis (4-aminocumyl) benzene, 1,3-bis (4-aminocumyl) benzene, 1,4-bis (4-aminophenoxy) benzene 1,4-bis (3-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 2,2-bis [4- (4-aminophenoxy) phenyl] propane, 2,2-bis [ 4- (3-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] sulfone, [4- (3-aminophenoxy) phenyl] sulfone, bis [4- (4-aminophenoxy) phenyl] ether, 2,2-bis [4- (4-aminophenoxy) phenyl] biphenyl, of the formula (VIII) Siloxane diamine represented,

Embedded image [In the formula (VIII), R ₃ and R ₄ are divalent organic groups, and R _{5 to} R
₈ represents a monovalent organic group, and m represents an integer of 1 to 100. And the like, and two or more of these may be used in combination.

As the diisocyanate of the above formula (VII), there are those obtained by replacing the amino group in the above-mentioned diamine with an isocyanate group.

When a diamine or diisocyanate of the formula (VI) or (VII) is added, the polyamideimide of the present invention has a repeating unit of the formula (II) in addition to the repeating unit of the formula (I). It is a polymer.

The reaction between the trimellitic anhydride of the formula (IV) and the diamine of the formula (V) or the formula (VI) can be carried out by a known method (for example, “Norio Tsubokawa et al., Journal of Polymers, Vol. 45, 263-267, 1988 ").

The reaction between the monochloride of trimellitic anhydride of formula (IV) and the diamine of formula (V) or (VI) is carried out in the presence of a dehydrochlorinating agent such as pyridine, triethylamine or propylene oxide. A polyamidoamide is once produced by reacting in an organic solvent at a temperature lower than 100 ° C., and then heated to imidization, or an acid anhydride such as acetic anhydride, propionic anhydride, benzoic anhydride, dicyclohexylcarbodiimide. To a carbodiimide compound such as pyridine, isoquinoline, trimethylamine, aminopyridine, imidazole and the like to chemically ring-close (imidize) (the ring-closing agent and the ring-closing catalyst are each based on 1 mol of the acid anhydride. Usually, it is used within a range of 1 to 8 mol).

When a diisocyanate is used in place of the above diamine, a known method (for example, “Norio Tsubokawa et al., Journal of Polymers, Vol. 43, pp. 71-75, 1986”).
Year ").

In these reactions, the organic solvent used is an aprotic polar solvent such as N-methyl-pyrrolidone, N, N-dimethylacetamide and N, N-dimethylformamide; and an ether such as tetrahydrofuran, dioxane, monoglyme and diglyme. Organic solvents and the like. In addition, an appropriate amount of an organic solvent such as benzene, toluene, xylene, methyl ethyl ketone, methyl cellosolve, or cellosolve acetate may be used for dissolving the raw material monomer or the product such as polyamideimide or polyamideamic acid.

In the present invention, in the reaction of trimellitic anhydride or its monochloride with a diamine, the amounts of both used are basically on an equimolar basis. The permissible excess of either one is preferably up to 10 mol%, more preferably up to 5 mol%.

In the present invention, silane coupling agents having an organic reactive group include vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, and β- (3,4-epoxycyclohexyl) ethyl. Trimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-β
-(Aminoethyl) -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane,
N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, etc.
Among these, an epoxysilane-based coupling agent having an epoxy group is preferable. Here, the organic reactive group is a functional group such as an epoxy group, a vinyl group, an amino group, and a mercapto group.

When a liquid resin composition such as varnish is prepared by adding an organic solvent to the resin composition of the present invention, N-methyl-pyrrolidone, N, N-dimethylacetamide, N, N-dimethyl may be used as the organic solvent. Aprotic polar solvents such as formamide, tetrahydrofuran, dioxane,
Examples thereof include ether organic solvents such as monoglyme and diglyme, benzene, toluene, xylene, methyl ethyl ketone, methyl cellosolve, cellosolve acetate, and a mixed solvent thereof.

In the resin composition of the present invention, one silane coupling agent (C) having an organic reactive group at the terminal is added to 100 parts by weight of the total amount of the resin composition (that is, A + B + C).
-15 % by weight, preferably 2-10 % by weight. When the content of the silane coupling agent (C) is less than 1 % by weight,
The heat-resistant adhesive manufactured using the same has poor reflow crack resistance, and if it exceeds 15 % by weight, the heat-resistant adhesive manufactured using the same has poor wettability and reduced adhesive strength.

The heat-resistant adhesive of the present invention is prepared by appropriately diluting the resin composition of the present invention with the above-mentioned organic solvent, or by taking a certain amount thereof without dilution, and then subjecting to heat treatment. The heating conditions may be appropriately determined depending on the type of the organic solvent used.
0 minutes to several hours, followed by several tens minutes to several hours at about 200-300 ° C. This heat treatment causes evaporation (removal) of the organic solvent and cross-linking reaction between the polyamideimide and the silane coupling agent. The film-like heat-resistant adhesive of the present invention is prepared by appropriately diluting the resin composition with the organic solvent, and then casting the resin composition on a flat plate such as a glass plate or a stainless steel plate, or a film such as a polyester film with a constant thickness. After application, it is usually obtained by heating at about 80 to 150 ° C. for several tens of minutes to several hours, then at about 200 to 300 ° C. for several tens of minutes to several hours, and then peeling off from the plate or film.

The heat-resistant film with a heat-resistant adhesive layer of the present invention is prepared by appropriately diluting the resin composition of the present invention with the above-mentioned organic solvent, coating the heat-resistant film on one or both sides, and subjecting it to a heat treatment in the same manner as described above. And can be manufactured.

Examples of the heat-resistant film used include heat-resistant films of engineering plastics such as polyimide, polyamide, polysulfone, polyphenylene sulfide, polyetheretherketone, and polyarylate. The heat-resistant film may be subjected to a physical treatment such as sandblasting, or a chemical treatment with an alkali or a silane coupling agent, a plasma treatment, a corona treatment, or another surface treatment.

By using this film-like heat-resistant adhesive or a film with a heat-resistant adhesive layer, it is possible to manufacture a semiconductor device which is excellent in workability, yield and reliability. For example, a film with a heat-resistant adhesive layer is punched into a predetermined size, and the obtained film piece is sandwiched between a lead frame and a semiconductor element.
It is possible to produce a semiconductor device by bonding under pressure for 0.1 to 10 seconds with a, then joining the lead frame and the semiconductor element with a gold wire or the like, transfer molding with a molding material such as epoxy resin, and sealing. it can.

[0030]

The present invention will be described below in detail with reference to examples.

Example 1 In a 2000 ml four-necked flask equipped with a stirrer, a thermometer, a nitrogen gas inlet tube and a calcium chloride tube, 2,2-bis [4- (4-aminophenoxy) phenyl] propane [formula (IX) Hereinafter, abbreviated as BAPP] 139.6 g (85 mol% of all diamines);

Embedded image 1,12-diaminododecane [formula (X); hereinafter, DADDc
8.0 g (10 mol% of all diamines),

[Image Omitted] H ₂ N— (CH ₂ ) ₁₂ —NH ₂ (X) 1,3-bis (3-aminopropyl) tetramethylsiloxane [formula (XI)] 5.0 g (5 mol% of all diamines) ,

Embedded image And 1100 ml of N-methyl-pyrrolidone were taken and stirred. 84.2 g of trimellitic anhydride monochloride (hereinafter abbreviated as TAC) was added little by little so as not to exceed 10 ° C. After stirring for 2 hours, triethylamine.
7 g was added and the mixture was further stirred for 2 hours to obtain a polyamidoamic acid.

Then, 61.3 g of acetic anhydride, 4 pyridine
7.5 g was added and reacted overnight at room temperature to synthesize a polyamideimide. The resulting polyamideimide varnish was poured into water, and the resulting precipitate was separated, crushed with a mixer, and heated at about 100 ° C. to remove water and the organic solvent, thereby obtaining a polyamideimide powder. The obtained polyamideimide powder was measured using gel permeation chromatography (hereinafter abbreviated as GPC; eluent: DMF, liquid speed: 1 ml / min, detection: UV detector), and the weight average molecular weight was calculated as polystyrene. It was 11.4 × 10 ⁴ .

3.0 g of this polyamideimide powder and γ
-Glycidoxypropyltrimethoxysilane [Formula (XI
I); hereinafter abbreviated as CPL] of 0.157 g (amount of CPL:
5% by weight)

Embedded image And N, N-dimethylformamide (solvent) so that the concentration of the polyamideimide powder is 25% by weight.
Was added and dissolved to prepare a varnish. This varnish was applied on a polyester film so that the finished adhesive layer thickness was 25 μm, heated at 100 ° C. for 30 minutes, peeled off the adhesive layer from the polyester film, fixed to a metal frame, and further heated at 300 ° C. For 100 minutes to produce a film adhesive having a thickness of 25 μm. Glass transition point of this film adhesive (hereinafter abbreviated as Tg)
With dynamic viscoelasticity (frequency: 10 Hz, heating rate: 2 ° C. /
Min, tan δ peak value) and found to be 205 ° C. Further, a 5% weight loss temperature (hereinafter, abbreviated as Td) was measured using a differential thermobalance (heating rate: 10 ° C./min, in air), and it was 400 ° C.

The varnish was applied to both sides of a 50 μm-thick polyimide film (upilex S, manufactured by Ube Industries, Ltd.) so that the thickness of each was 25 μm. To obtain a film.
The heat-resistant film with the heat-resistant adhesive layer obtained was 10 mm ×
It is cut into a size of 20 mm, and it is press-bonded to 42 alloy as a lead frame material under the conditions of temperature: 375 ° C., pressure: 6 MPa, and time: 3 seconds, and then peels off 90 degrees according to JIS C6481. When measured (measuring temperature: 25 ° C., tensile speed: 50 mm / min), it was 400 N / m. In addition, the length of protrusion of the adhesive layer from the end of the film (criterion of wettability) when pressed under these conditions is 4
It was 2 μm.

A semiconductor device (package) shown in FIG. 1 was manufactured using the heat-resistant film with a double-sided heat-resistant adhesive layer. After 168 hours of moisture absorption at 85 ° C and 85% RH,
Infrared reflow was performed, but no package crack occurred.

Example 2 The amount of CPL used in Example 1 was 0.33 g (CPL
, A heat-resistant adhesive, a heat-resistant film with a heat-resistant adhesive layer, and a semiconductor device were manufactured in the same manner as in Example 1, and further tested in the same manner as in Example 1. . Tg and Td of the obtained film adhesive were the same as those in Example 1. The 90-degree peel strength when the film with the heat-resistant adhesive layer was pressed against 42 alloy was 100 N / m, and the protruding length of the film with the heat-resistant adhesive layer pressed under the same conditions was 5 μm. Was. The semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was allowed to absorb moisture at 85 ° C. and 85% RH for 168 hours, and then subjected to infrared reflow, but no package crack occurred.

Example 3 The amount of BAPP used in Example 1 was 106.7 g,
The amount of DADDc was 24.1 g (DADDc based on all diamines).
In the same manner as in Example 1 except that a heat-resistant adhesive, a heat-resistant film with a heat-resistant adhesive layer and a semiconductor device were produced, and further tested in the same manner as in Example 1. . The molecular weight of the obtained polyamideimide is 9.9 ×
10 ⁴ , and Tg and T of the obtained film adhesive.
d was 178 ° C and 385 ° C, respectively. The 90-degree peel strength when the film with the heat-resistant adhesive layer was pressed against 42 alloy was 1000 N / m or more, and the protruding length of the film with the heat-resistant adhesive layer pressed under the same conditions was 50 μm. there were. A semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was heated at 85 ° C. and 85% R
After moisture absorption with H for 168 hours, infrared reflow was performed, but no package crack occurred.

Example 4 A heat-resistant adhesive, a heat-resistant film with a heat-resistant adhesive layer, and a heat-resistant adhesive were prepared in the same manner as in Example 3 except that the amount of CPL used in Example 3 was changed to 0.33 g (10% by weight). A semiconductor device was manufactured and tested in the same manner as in Example 3. Tg and Td of the obtained film adhesive were the same values as in Example 3. In addition, a film with a heat-resistant adhesive layer
90 degree peel strength when pressed to alloy is 100
At 0 N / m or more, the protruding length of the film with a heat-resistant adhesive layer pressed under the same conditions was 30 μm. The semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was allowed to absorb moisture at 85 ° C. and 85% RH for 168 hours, and then subjected to infrared reflow, but no package crack occurred.

Example 5 A film having a heat-resistant adhesive layer was produced in the same manner as in Example 3. Example 1 except that the pressing temperature was 350 ° C.
The copper alloy was pressed against the copper alloy under the same conditions as described above, and the 90 ° peel strength was measured to be 900 N / m. The protruding length of the film with a heat-resistant adhesive layer pressed under the same conditions was 38 μm. A semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was heated at 85 ° C. and 85% RH.
168 hours, and infrared reflow was performed, but no package crack occurred.

Example 6 A film having a heat-resistant adhesive layer was produced in the same manner as in Example 3. Example 1 except that the pressing temperature was set to 300 ° C.
It was 740 N / m when it was press-bonded to a copper alloy under the same conditions as above and its 90 degree peeling strength was measured. The protruding length of the film with a heat-resistant adhesive layer pressed under the same conditions was 13 μm. A semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was heated at 85 ° C. and 85% RH.
168 hours, and infrared reflow was performed, but no package crack occurred.

Comparative Example 1 A heat-resistant adhesive, a heat-resistant film with a heat-resistant adhesive layer and a semiconductor device were prepared in the same manner as in Example 1 except that γ-glycidoxypropyltrimethoxysilane was not added. Was prepared and tested in the same manner as in Example 1. Tg and Td of the obtained film adhesive were the same as those obtained in Example 1. The 90-degree peel strength when the film with the heat-resistant adhesive layer was pressed against 42 alloy was 750 N / m, and the protruding length of the film with the heat-resistant adhesive layer pressed under the same conditions was 100 μm.
Met. A semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was allowed to absorb moisture at 85 ° C. and 85% RH for 168 hours, and then subjected to infrared reflow, whereby a package crack occurred.

Comparative Example 2 A heat-resistant adhesive, a heat-resistant film with a heat-resistant adhesive layer and a semiconductor device were prepared in the same manner as in Example 1 except that γ-glycidoxypropyltrimethoxysilane was not used. Was prepared and tested in the same manner as in Example 1. Tg and Td of the obtained film adhesive were the same as the values obtained in Example 3 . The 90-degree peel strength when the film with the heat-resistant adhesive layer was pressed against 42 alloy was 1000 N / m or more, and the protruding length of the film with the heat-resistant adhesive layer pressed under the same conditions was 15
It was 0 μm. A semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was heated at 85 ° C. and 85% RH for 1 hour.
After moisture absorption for 68 hours, infrared ray reflow caused package cracks.

Comparative Example 3 A heat-resistant adhesive, a heat-resistant film with a heat-resistant adhesive layer and a semiconductor device were produced in the same manner as in Example 1 except that DADDc was not used. Tested similarly. The Tg of the obtained film adhesive is 2
At 25 ° C., the Td was 430 ° C. The 90-degree peel strength when the film with a heat-resistant adhesive layer was pressed against 42 alloy was 620 N / m. When a semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was subjected to infrared reflow after absorbing moisture for 168 hours at 85 ° C. and 85% RH, no package crack was generated, but the protruding length was 0 μm. (Poor wettability).

Comparative Example 4 A film having a heat-resistant adhesive layer was prepared in the same manner as in Comparative Example 3. Example 1 except that the pressure bonding temperature was set to 400 ° C.
Under the same conditions as above, the alloy was pressed against a 42 alloy. The 90 degree peeling strength at this time was 840 N / m. When a semiconductor device manufactured using the obtained film with a heat-resistant adhesive layer was subjected to infrared reflow after absorbing moisture for 168 hours at 85 ° C. and 85% RH, no package crack was generated, but the protruding length was 0 μm. (Poor wettability).
The above results are summarized in Table 1.

[0045]

[Table 1] No. DADDc CPL Td Tg Crimping temperature Adhesive strength Extrusion Crack (mol%) (wt%) (° C) (° C) (° C) / substrate (N / m) Length (μm) ━━━━━━━━━━━━━━━━━ ━━━━━━━━━━━━━━━━━━━ Example 1 10 5 400 205 375 / (42) 400 42 None Example 2 10 10 400 205 375 / (42) 100 5 None Example Example 3 30 5 385 178 375 / (42)> 1000 50 None Example 4 30 10 385 178 375 / (42)> 1000 30 None Example 5 30 5 385 178 350 / (Cu) 900 38 None Example 6 30 5 385 178 300 / (Cu) 740 13 None Comparative example 1 10 0 400 205 375 / (42) 750 100 Available Comparative example 2 30 0 385 178 375 / (42)> 1000 150 Available Comparative example 3 0 5 430 225 375 / (42) 620 0 None Comparative Example 4 0 5 430 225 400 / (42) 840 0 None ━━━━━━━━━━━━━━━━━━━━━━━━━━━━ ━━━━━━━━

[0046]

The resin composition according to claim 1 or 2 is novel and enables the production of the heat-resistant adhesive according to claims 3 and 4, and the film with the heat-resistant adhesive layer according to claim 5. And The heat-resistant adhesive according to claim 3 or 4, or the film with the heat-resistant adhesive layer according to claim 5,
It is a heat-resistant adhesive that can be bonded at a low temperature of 0 ° C. or less, has excellent adhesiveness and wettability, and has excellent reflow crack resistance. These can be used for manufacturing the semiconductor device according to the fifth aspect. The semiconductor device according to claim 5 is excellent in reflow crack resistance and high in reliability.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view of an example of a semiconductor device according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Sealant 2 ... Gold wire 3 ... Lead frame 4 ... Heat resistant film with heat resistant adhesive layer 5 ... Semiconductor element

Continuation of the front page (51) Int.Cl. ⁷ identification code FI H01L 21/60 301 H01L 21/60 301B (58) Investigated field (Int.Cl. ⁷ , DB name) C08L 79/08 C08G 73/14 C09J 7/00 C09J 7/02 C09J 179/08

Claims (6)

(57) [Claims] 1. A compound of the formula (I) [In the formula (I), R ₁ and R ₂ each independently represent hydrogen or an alkyl group having 1 to 4 carbon atoms, and n represents an integer of 1 to 30. Polyamideimide having a repeating unit of
And silane coupling agents having organic reactive groups 1 to 15
A resin composition comprising: 2. A compound of the formula (I) [In the formula (I), R ₁ and R ₂ each independently represent hydrogen or an alkyl group having 1 to 4 carbon atoms, and n represents an integer of 1 to 30. The polyamideimide having a repeating unit of
2 to 50 mol% of the total polyamideimide , formula (II) [In the formula (II), R is a divalent organic group having an aromatic or alicyclic group, or a compound represented by the formula (III): (However, in the formula (III), R ₃ and R ₄ are divalent organic groups,
R _{5 to} R ₈ represent a monovalent organic group, and m represents an integer of 1 to 100. ) Represents a divalent organic group. The polyamideimide having a repeating unit of 50 to 98 mol of the total polyamideimide
% , And a silane coupling agent 1 having an organic reactive group
A resin composition comprising: 15% by weight . 3. A resin composition according to claim 1, wherein the resin composition has a polyamideimide and an organic reactive group.
Heat resistant adhesive obtained by heating at the temperature at which the coupling agent reacts . 4. The heat-resistant adhesive according to claim 3, wherein the adhesive is in the form of a film. 5. A heat-resistant film having a heat-resistant adhesive layer, wherein the heat-resistant adhesive layer according to claim 3 is formed on one or both sides of the heat-resistant film. 6. A semiconductor device wherein a lead frame and a semiconductor element are adhered by the heat-resistant adhesive according to claim 3, 4 or 5.