JP2000036502A - Bonding material and bonded object - Google Patents
Bonding material and bonded objectInfo
- Publication number
- JP2000036502A JP2000036502A JP10203106A JP20310698A JP2000036502A JP 2000036502 A JP2000036502 A JP 2000036502A JP 10203106 A JP10203106 A JP 10203106A JP 20310698 A JP20310698 A JP 20310698A JP 2000036502 A JP2000036502 A JP 2000036502A
- Authority
- JP
- Japan
- Prior art keywords
- bonding material
- bonding
- joined
- joining
- spherical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/743—Apparatus for manufacturing layer connectors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、２つの材料の接合
に用いられる接合材及びその接合物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a joining material used for joining two materials and a joined product thereof.
【０００２】[0002]
【従来の技術】接合すべき２つの接合体があり、これら
を接合材にて接合する場合、一方の接合体の上に、ディ
スペンサー方式あるいはスタンピング方式にて接合材を
塗布し、この上に他方の接合体を一定の荷重をかけて接
合する。これを図２に示す。2. Description of the Related Art There are two joined bodies to be joined, and when joining them with a joining material, a joining material is applied on one of the joined bodies by a dispenser method or a stamping method, and the other is put on the other. Are joined by applying a constant load. This is shown in FIG.
【０００３】ディスペンサー方式では、シリンジ５に収
容された樹脂系接着剤の接合材４を、空気圧によってノ
ズル５ａから押し出し、第１接合体３の上に塗布する。
そして、その上から、第２接合体２を載置し荷重をかけ
て接合する。In the dispenser system, a resin-based adhesive bonding material 4 housed in a syringe 5 is extruded from a nozzle 5 a by air pressure and applied onto the first bonded body 3.
Then, from above, the second joined body 2 is placed and joined by applying a load.
【０００４】スタンピング方式では、まず、皿６に接合
材４を盛り、皿６を回転させる。次に、へら状のスキー
ジ７を接合材４に押し当て引き伸ばし、接合材４の厚み
を一定にする。このときスキージ７の高さ、つまりスキ
ージ７と皿６の底部との間隔を調整することにより、接
合材４の厚さを調整し、接合材４に浸漬させたニードル
８の先端に付着する接合材４の量を制御する。そして、
ニードル８を第１接合体３の上に押しつけて（スタンピ
ング）、その先端に付着している接合材４を転写（塗
布）する。そして、その上から、第２接合体２を載置し
荷重をかけて接合する。なお、ニードル８は、例えば角
柱や円柱形状を呈しており、その太さは、第１接合体３
と第２接合体２との接合面積に合わせて、大小が選択さ
れる。In the stamping method, first, the joining material 4 is put on the plate 6 and the plate 6 is rotated. Next, the spatula-shaped squeegee 7 is pressed against the joining material 4 and stretched to make the thickness of the joining material 4 constant. At this time, by adjusting the height of the squeegee 7, that is, the distance between the squeegee 7 and the bottom of the plate 6, the thickness of the joining material 4 is adjusted, and the joining adheres to the tip of the needle 8 immersed in the joining material 4. The amount of material 4 is controlled. And
The needle 8 is pressed onto the first joined body 3 (stamping), and the joining material 4 attached to the tip is transferred (applied). Then, from above, the second joined body 2 is placed and joined by applying a load. The needle 8 has, for example, a prismatic or cylindrical shape, and the thickness thereof is
The size is selected according to the joint area between the second joint 2 and the second joint 2.
【０００５】また、図２では、第１接合体３及び第２接
合体２の大きさは区別して図示していないが、一般的
に、ディスペンサー方式は、小さなものの接合（接合面
積が小さい場合）に、スタンピング方式は大きなものの
接合（接合面積が大きいい場合）にというように使い分
けられる。また、接合面積が大きい場合には、ディスペ
ンサー方式、スタンピング方式共に、接合材４を多点状
に、第１接合体３上に塗布して、これにより均一に塗布
することができる。Further, in FIG. 2, although the sizes of the first joined body 3 and the second joined body 2 are not shown separately, in general, the dispenser method is used for joining small objects (when the joint area is small). In addition, the stamping method can be properly used for joining large parts (when the joining area is large). When the bonding area is large, both the dispenser method and the stamping method can apply the bonding material 4 to the first bonded body 3 in a multipoint manner, and thereby can apply the bonding material 4 uniformly.
【０００６】以上述べた接合方式において、接合材４の
経時変化による粘度の変化、更にはディスペンサー方式
の場合には空気圧のばらつき、スタンピング方式の場合
にはニードル８に付着する接合材４の量のばらつきによ
り塗布される接合材４の量にばらつきがでてくる。従っ
て、図３に示すように、接合された後の接合材４の厚み
を一定に保つことができないという問題があった。これ
は、第１接合体３の上面を基準として、第２接合体２の
下面（又は上面）までの距離を制御しなければならない
場合、例えば、接合後の接合物１が、厳しい寸法精度を
要求される電子部品や光学部品等である場合には致命的
な問題となる。In the above-described joining method, the viscosity of the joining material 4 changes with time, the air pressure varies in the dispenser method, and the amount of the joining material 4 adhered to the needle 8 in the stamping method. The amount of the bonding material 4 applied varies due to the variation. Therefore, as shown in FIG. 3, there is a problem that the thickness of the bonding material 4 after bonding cannot be kept constant. This is because when the distance to the lower surface (or upper surface) of the second bonded body 2 has to be controlled with reference to the upper surface of the first bonded body 3, for example, the bonded article 1 after bonding has strict dimensional accuracy. It is a fatal problem if it is a required electronic component or optical component.
【０００７】そこで、特開平５−８９７２１号公報（以
下、第２従来例とする。）によれば、接着剤中に、球径
を一定の大きさにコントロールされた球状シリカを含有
させ、接着剤層の厚さをコントロールすることが示され
ている。これを図４に示すが、接着剤２１は球状シリカ
２３を含み、この接着剤２１を用いて半導体チップ２０
とリードフレーム２２を接合した場合には、接着剤２１
中に一層に配列されているシリカ２３の球径により、接
着剤２１の厚さは一定にコントロールされる。Therefore, according to Japanese Patent Application Laid-Open No. Hei 5-89721 (hereinafter referred to as a second conventional example), the adhesive is made to contain spherical silica whose sphere diameter is controlled to a constant size, and the adhesive is bonded. It is shown to control the thickness of the agent layer. As shown in FIG. 4, the adhesive 21 contains spherical silica 23, and the semiconductor chip 20 is
When the lead frame 22 is bonded to the
The thickness of the adhesive 21 is controlled to be constant by the spherical diameter of the silica 23 arranged in one layer.
【０００８】[0008]
【発明が解決しようとする課題】２つのものを接合材を
介して接合する場合、通常荷重を加えて接合させるが、
接合されるものが薄い場合は、荷重が加わった時割れて
しまう可能性がある。特に、半導体チップの場合はシリ
コンなのでもろく衝撃に弱いため割れやすい。上記第２
従来例の接着剤２１中に含まれるシリカ２３は硬いの
で、半導体チップ２０が薄い場合には、接合時に損傷を
与えてしまう可能性がある。When two parts are joined via a joining material, they are usually joined by applying a load.
If the object to be joined is thin, it may crack when a load is applied. In particular, in the case of a semiconductor chip, since it is silicon, it is fragile and weak to impact, so it is easily broken. The second
Since the silica 23 contained in the adhesive 21 of the conventional example is hard, when the semiconductor chip 20 is thin, there is a possibility that the semiconductor chip 20 may be damaged during bonding.
【０００９】また、半導体等の電子部品では製造工程中
に加わる熱や部品自体からの発熱等、熱の影響により部
品の信頼性が損なわれる心配がある。第２従来例の接合
材に含まれるシリカ（ＳｉＯ2 ）の熱伝導率（温度３７
３Ｋにおける）は０．９Ｗ／（ｍ・Ｋ）であり非常に小
さく、接合材における熱はけは悪い。In addition, in electronic parts such as semiconductors, there is a concern that the reliability of the parts may be impaired by the influence of heat such as heat applied during the manufacturing process and heat generated by the parts themselves. The thermal conductivity (temperature 37) of silica (SiO 2 ) contained in the bonding material of the second conventional example.
(At 3 K) is 0.9 W / (m · K), which is very small, and the heat release in the bonding material is poor.
【００１０】本発明は上述の問題に鑑みてなされ、接合
材の量がばらついても、接合後の接合材及び接合材を介
して接合された接合物の厚みを一定に保つことができ、
且つ熱はけを良くすることができる、又はダメージを与
えることなく接合することができる接合材及びその接合
物を提供することを課題とする。[0010] The present invention has been made in view of the above problems, and even if the amount of the bonding material varies, it is possible to keep the thickness of the bonding material after bonding and the bonded product via the bonding material constant,
It is another object of the present invention to provide a bonding material and a bonding material that can improve the heat release or can perform bonding without causing damage.
【００１１】[0011]
【課題を解決するための手段】本発明の接合材は、樹脂
系接着剤に金属又は弾性体でなる球状物質を混入させて
おり、これにより、接合後の接合材の厚みを一定に保つ
ことができ、且つ球状物質に金属を用いた場合には熱は
けを良くすることができ、又は弾性体を用いた場合には
ダメージに弱い接合体でも接合することができる。The bonding material of the present invention comprises a resin-based adhesive mixed with a spherical substance made of metal or an elastic material, thereby keeping the thickness of the bonding material after bonding constant. When a metal is used for the spherical material, the heat can be easily removed, or when an elastic body is used, a bonded body that is weak to damage can be bonded.
【００１２】そして、本発明の接合材を介して接合され
た接合物も、その厚さを、接合材の量によらず一定にす
ることができ、且つ接合材中に含まれる球状物質に金属
を用いた場合には熱はけを良くすることができ、又は弾
性体を用いた場合にはダメージに弱いものであっても損
傷を受けるようなことはない。[0012] Also, the joined object joined via the joining material of the present invention can have a constant thickness regardless of the amount of the joining material, and the metallic material is added to the spherical material contained in the joining material. In the case where is used, it is possible to improve the heat dissipation, and in the case where an elastic body is used, even if it is vulnerable to damage, it will not be damaged.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１４】図１は、本実施の形態による、接合後の接
合物１１を示し、Ａは接合材１４の量が少ない場合、Ｂ
は接合材１４の量が多い場合を示す。接合材１４は、樹
脂系接着剤１６（例えば、エポキシ系又はポリイミド系
の熱硬化性樹脂）に、接合後に所望の厚みａとなるよう
に、径をａに揃えられた球状物質１５を混合させてな
る。球状物質１５は、例えば、銀や銅等の金属、あるい
はゴム等の弾性体でなる。FIG. 1 shows a bonded article 11 after bonding according to the present embodiment, where A is B when the amount of bonding material 14 is small.
Indicates a case where the amount of the bonding material 14 is large. The bonding material 14 is obtained by mixing a spherical material 15 having a diameter a with a resin adhesive 16 (for example, an epoxy-based or polyimide-based thermosetting resin) so as to have a desired thickness a after bonding. It becomes. The spherical substance 15 is made of, for example, a metal such as silver or copper, or an elastic body such as rubber.
【００１５】第１従来例と同様にディスペンサー方式あ
るいはスタンピング方式で、第１接合体１３上に接合材
１４を塗布し、その上から、一層になるように含まれて
いる球状物質１５が、第１接合体１３と第２接合体１２
に接触する程度に、第２接合体１２に荷重をかけて、加
熱硬化させて接合し、接合物１１となる。As in the first conventional example, a bonding material 14 is applied on the first bonded body 13 by a dispenser method or a stamping method, and a spherical substance 15 contained in a single layer is formed on the bonding material 14 from above. 1 joined body 13 and 2nd joined body 12
A load is applied to the second joined body 12 to such an extent that the second joined body 12 is brought into contact with the second joined body 12, and the second joined body 12 is cured by heating and joined to form the joined article 11.
【００１６】本実施の形態による接合材及びその接合物
は以上のように構成され、次にこの作用について説明す
る。The bonding material and the bonded product according to the present embodiment are configured as described above, and the operation will be described next.
【００１７】塗布する接合材１４の量がばらついても、
つまり接合材１４の量が多い、少ないにかかわらず、接
合後の接合材１４の厚みを一定、つまり、球状物質１５
の径ａに保つことができる。更に、球状物質１５を熱伝
導率の大きい金属、例えば銀又は銅にすることにより
（温度２７３Ｋにおける、銀の熱伝導率は４２８Ｗ／
（ｍ・Ｋ）、銅は４０３Ｗ／（ｍ・Ｋ）であり、上記第
２従来例のシリカの０．９Ｗ／（ｍ・Ｋ）よりもはるか
に大きい）、熱はけを良くすることができ、特に第２接
合体１２が半導体チップで第１接合体１３がリードフレ
ームである場合には、熱はけが良くなることにより半導
体チップ１２の信頼性を高めることができる。また、物
質の硬さの定義の１つである、モース硬度によれば、Ｓ
ｉＯ2 （シリカ）のその値は６〜７であり、銅は３とな
っている。よって、銅の硬さはＳｉＯ2 の約半分である
ので、接合時に半導体チップ１２を傷つけることが少な
い。従って、球状物質１５に銅を用いれば熱はけを良く
すると共に、半導体チップ１２に与えるダメージも減
る。Even if the amount of the bonding material 14 to be applied varies,
That is, regardless of whether the amount of the bonding material 14 is large or small, the thickness of the bonding material 14 after bonding is constant, that is, the spherical material 15
Of diameter a. Further, by making the spherical material 15 a metal having a high thermal conductivity, for example, silver or copper (at a temperature of 273 K, the thermal conductivity of silver is 428 W /
(M · K), copper is 403 W / (m · K), which is much larger than 0.9 W / (m · K) of the silica of the second conventional example. In particular, when the second bonded body 12 is a semiconductor chip and the first bonded body 13 is a lead frame, the reliability of the semiconductor chip 12 can be improved by improving heat dissipation. According to Mohs hardness, which is one of the definitions of the hardness of a substance, S
The value of iO 2 (silica) is 6-7, and copper is 3. Therefore, since the hardness of copper is about half that of SiO 2 , the semiconductor chip 12 is less likely to be damaged at the time of bonding. Therefore, when copper is used for the spherical material 15, heat dissipation is improved and damage to the semiconductor chip 12 is reduced.
【００１８】あるいは、半導体チップ１２が薄く割れや
すい場合には、球状物質１５に弾性体（例えばゴム）を
用いることで、接合時に加わる荷重によっても、半導体
チップ１２はダメージを受けることなく接合される。Alternatively, when the semiconductor chip 12 is thin and easily broken, an elastic body (for example, rubber) is used for the spherical substance 15 so that the semiconductor chip 12 is joined without being damaged even by a load applied at the time of joining. .
【００１９】また、以上のような半導体チップ１２のダ
イボンディング（半導体チップ１２のリードフレーム１
３への固定）の場合には、球状物質１５の径ａは２０〜
３０μｍとして、接合材１４を２０〜３０μｍの厚さに
コントロールする。これにより、接合後の接合物（半導
体部品）１１のミクロン単位の寸法精度の要求を満たす
ことができる。The above-described die bonding of the semiconductor chip 12 (the lead frame 1 of the semiconductor chip 12) is performed.
3), the diameter a of the spherical substance 15 is 20 to
The thickness of the bonding material 14 is controlled to 20 to 30 μm by setting the thickness to 30 μm. This can satisfy the requirement of the dimensional accuracy of the joined article (semiconductor component) 11 after the joining in units of microns.
【００２０】以上、本発明の実施の形態について説明し
たが、勿論、本発明はこれに限定されることなく、本発
明の技術的思想に基いて種々の変形が可能である。Although the embodiments of the present invention have been described above, the present invention is, of course, not limited thereto, and various modifications can be made based on the technical concept of the present invention.
【００２１】上記実施の形態では、金属として銀と銅を
示したが、これらに限らず、熱伝導率の大きいものであ
れば他の金属でもよい。In the above-described embodiment, silver and copper are shown as metals. However, the present invention is not limited to these, and other metals having a high thermal conductivity may be used.
【００２２】また、上記実施の形態では、半導体チップ
とリードフレームとの接合としたが、これに限ることな
く、例えば、半導体チップとパッケージ（プラスチッ
ク、金属、セラミック等でなる）との接合、光の方向、
位置精度が厳しい光学部品、例えばミラーやプリズム等
と基板との接合としてもよい。In the above embodiment, the semiconductor chip is joined to the lead frame. However, the present invention is not limited to this. For example, the joining between the semiconductor chip and a package (made of plastic, metal, ceramic, or the like), light, Direction,
An optical component with strict positional accuracy, such as a mirror or a prism, may be joined to a substrate.
【００２３】また、球状物質１５の球径ａも、接合され
るものによって異なり、２０〜３０μｍに限られること
はない。Further, the spherical diameter a of the spherical substance 15 also differs depending on what is joined, and is not limited to 20 to 30 μm.
【００２４】また、上記実施の形態では樹脂系接着剤１
６をエポキシ系又はポリイミド系の熱硬化性樹脂とした
が、これに限ることなく、アクリル系、シリコーン系等
でもよい。また、熱硬化性に限らず常温硬化性の樹脂で
もよい。In the above embodiment, the resin adhesive 1
6 is an epoxy-based or polyimide-based thermosetting resin, but is not limited thereto, and may be an acrylic-based or silicone-based resin. Further, the resin is not limited to the thermosetting resin, but may be a room temperature setting resin.
【００２５】[0025]
【発明の効果】以上述べたように、本発明の請求項１に
よる接合材によれば、接合材の量がばらついても接合後
の接合材の厚さを一定に保つことができ、且つ接合材中
に含まれる球状物質を金属とすることで熱はけを良くす
ることができる、あるいは、球状物質を弾性体とするこ
とで物理的ダメージに弱い接合体でも損傷を与えること
なく接合することができる。As described above, according to the bonding material of the first aspect of the present invention, the thickness of the bonding material after bonding can be kept constant even if the amount of the bonding material varies, and The heat dissipation can be improved by using metal as the spherical substance contained in the material, or joining without damaging even a joint that is vulnerable to physical damage by making the spherical substance an elastic body Can be.
【００２６】また、本発明の請求項６による接合物によ
れば、接合材の量がばらついても、接合材を介して接合
された接合物の厚さを一定に保つことができ、且つ接合
材中に含まれる球状物質を金属とすることで熱はけを良
くすることができ、接合物の信頼性を高めることができ
る、あるいは、球状物質を弾性体とすることで、接合時
に、接合物が損傷を受けない。According to the joint according to the sixth aspect of the present invention, even when the amount of the joining material varies, the thickness of the joined material via the joining material can be kept constant, and the joining can be achieved. By using metal as the spherical material contained in the material, heat dissipation can be improved, and the reliability of the bonded object can be improved. Objects are not damaged.
【図１】本実施の形態による、第１接合体と第２接合体
とが接合材を介して接合された接合物を示し、Ａは接合
材の量が少ない場合、Ｂは接合材の量が多い場合を示す
図である。FIG. 1 shows a joint in which a first joined body and a second joined body are joined via a joining material according to the present embodiment, where A is the amount of the joining material is small, and B is the amount of the joining material. It is a figure showing the case where there are many.
【図２】第１従来例における接合工程の流れを示す図で
ある。FIG. 2 is a diagram showing a flow of a bonding process in a first conventional example.
【図３】第１従来例における、第１接合体と第２接合体
とが接合材を介して接合された接合物を示し、Ａは接合
材の量が少ない場合、Ｂは接合材の量が多い場合を示す
図である。FIG. 3 shows a bonded article in which a first bonded body and a second bonded body are bonded via a bonding material in a first conventional example, where A is the amount of the bonding material is small, and B is the amount of the bonding material. It is a figure showing the case where there are many.
【図４】第２従来例における、半導体チップとリードフ
レームとが接着剤を介して接合された接合物及び拡大し
た接着剤層の中を示す図である。FIG. 4 is a view showing a bonded article in which a semiconductor chip and a lead frame are bonded via an adhesive and an enlarged adhesive layer in a second conventional example.
１１……接合物、１２……第２接合体、１３……第１接
合体、１４……接合材、１５……球状物質、１６……樹
脂系接着剤。11 ... bonded article, 12 ... second bonded body, 13 ... first bonded body, 14 ... bonding material, 15 ... spherical substance, 16 ... resin-based adhesive.
Claims (10)
状物質を混合させたことを特徴とする接合材。1. A bonding material comprising a resin-based adhesive mixed with a metal or a spherical substance made of an elastic material.
の熱硬化性の樹脂であることを特徴とする請求項１に記
載の接合材。2. The bonding material according to claim 1, wherein the resin is an epoxy-based or polyimide-based thermosetting resin.
する請求項１に記載の接合材。3. The bonding material according to claim 1, wherein the metal is silver or copper.
る請求項１に記載の接合材。4. The bonding material according to claim 1, wherein the elastic body is rubber.
ｍ以下であることを特徴とする請求項１に記載の接合
材。5. The spherical material has a diameter of 20 μm or more and 30 μm or more.
The bonding material according to claim 1, wherein m is equal to or less than m.
して接合された接合物において、 前記接合材中に金属又は弾性体でなる球状物質を一層に
なるように含ませていることを特徴とする接合物。6. A joined article in which a first joined article and a second joined article are joined via a joining material, wherein the joining material contains a metal or an elastic spherical material in a single layer. A joint characterized in that:
り、前記第２接合体は半導体チップであることを特徴と
する請求項６に記載の接合物。7. The joined article according to claim 6, wherein the first joined article is a lead frame, and the second joined article is a semiconductor chip.
する請求項６に記載の接合物。8. The joint according to claim 6, wherein the metal is silver or copper.
る請求項６に記載の接合物。9. The joint according to claim 6, wherein the elastic body is rubber.
μｍ以下であることを特徴とする請求項６に記載の接合
物。10. The spherical substance has a diameter of 20 μm or more and 30 μm or more.
The joined article according to claim 6, wherein the thickness is not more than μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10203106A JP2000036502A (en) | 1998-07-17 | 1998-07-17 | Bonding material and bonded object |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10203106A JP2000036502A (en) | 1998-07-17 | 1998-07-17 | Bonding material and bonded object |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000036502A true JP2000036502A (en) | 2000-02-02 |
| JP2000036502A5 JP2000036502A5 (en) | 2005-09-08 |
Family
ID=16468500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10203106A Pending JP2000036502A (en) | 1998-07-17 | 1998-07-17 | Bonding material and bonded object |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000036502A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005519150A (en) * | 2002-02-28 | 2005-06-30 | ヘンケル コーポレイション | Adhesive composition containing organic spacer and method using the same |
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|---|---|---|---|---|
| JPS6481237A (en) * | 1987-09-22 | 1989-03-27 | Seiko Epson Corp | Semiconductor device |
| JPH06244225A (en) * | 1993-02-16 | 1994-09-02 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPH06322350A (en) * | 1993-03-17 | 1994-11-22 | Fujitsu Ltd | Conductive adhesive, its production and method for bonding semiconductor chip |
| JPH108001A (en) * | 1996-06-25 | 1998-01-13 | Lintec Corp | Tacky adhesive tape and its application |
| JPH1046114A (en) * | 1996-08-07 | 1998-02-17 | Hitachi Chem Co Ltd | Low-stress filmy adhesive, and lead frame and semiconductor device obtained by using the same |
| JPH1046113A (en) * | 1996-08-07 | 1998-02-17 | Hitachi Chem Co Ltd | Filmy adhesive adherable at low temperature, and lead frame and semiconductor device obtained by using the same |
| JPH10219109A (en) * | 1997-02-07 | 1998-08-18 | Hitachi Chem Co Ltd | Resin composition, adhesive, adhesive film, and lead frame and semiconductor device produced therefrom |
| JPH1135914A (en) * | 1997-07-14 | 1999-02-09 | Sumitomo Bakelite Co Ltd | Conductive resin paste and semiconductor device manufacture using the same |
| JPH11219963A (en) * | 1998-01-30 | 1999-08-10 | Hitachi Chem Co Ltd | Resin composition and semiconductor device provided therewith |
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1998
- 1998-07-17 JP JP10203106A patent/JP2000036502A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6481237A (en) * | 1987-09-22 | 1989-03-27 | Seiko Epson Corp | Semiconductor device |
| JPH06244225A (en) * | 1993-02-16 | 1994-09-02 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| JPH06322350A (en) * | 1993-03-17 | 1994-11-22 | Fujitsu Ltd | Conductive adhesive, its production and method for bonding semiconductor chip |
| JPH108001A (en) * | 1996-06-25 | 1998-01-13 | Lintec Corp | Tacky adhesive tape and its application |
| JPH1046114A (en) * | 1996-08-07 | 1998-02-17 | Hitachi Chem Co Ltd | Low-stress filmy adhesive, and lead frame and semiconductor device obtained by using the same |
| JPH1046113A (en) * | 1996-08-07 | 1998-02-17 | Hitachi Chem Co Ltd | Filmy adhesive adherable at low temperature, and lead frame and semiconductor device obtained by using the same |
| JPH10219109A (en) * | 1997-02-07 | 1998-08-18 | Hitachi Chem Co Ltd | Resin composition, adhesive, adhesive film, and lead frame and semiconductor device produced therefrom |
| JPH1135914A (en) * | 1997-07-14 | 1999-02-09 | Sumitomo Bakelite Co Ltd | Conductive resin paste and semiconductor device manufacture using the same |
| JPH11219963A (en) * | 1998-01-30 | 1999-08-10 | Hitachi Chem Co Ltd | Resin composition and semiconductor device provided therewith |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005519150A (en) * | 2002-02-28 | 2005-06-30 | ヘンケル コーポレイション | Adhesive composition containing organic spacer and method using the same |
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