JPH10199751A - Metallized film and film capacitor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a metallized film and a film capacitor which can improve reliability and uniformity of fuse performance. SOLUTION: This metallized film 1 is provided with a film 3, a metal evaporation film 4 formed on the film 3, and charge storage part demarcating margins 10 which divide the metal evaporation film 4 into many charge storage parts 8. In each of the charge storage parts 8, a thin-walled part 8C stretching along an end surface 4A for electrode connection, a thick-walled part 8B thicker than the part 8C, and a flat part 8A thinner than the part 8B are formed in order, from the side of the end surface 4A for electrode connection with which electrodes 12, 14 are to be connected.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a film capacitor and a metallized film for manufacturing the same.

[0002]

2. Description of the Related Art In a general film capacitor, a pair of films (referred to as metallized films) each having a metal-deposited film formed on a strip-shaped plastic film are superposed and wound in a cylindrical shape, and are wound on both ends of the cylindrical body. Although the electrodes are sprayed, recently, a structure as shown in FIG. 8 (developed view) has been adopted to enhance the security of this type of film capacitor.

In this film capacitor, a first metallized film 20 and a second metallized film 22 are superposed in parallel while being shifted in the width direction, and wound in a cylindrical shape, and metal is sprayed on both ends of the cylindrical body. Thus, the first electrode 28 and the second electrode 30 are formed.
Each of the first and second metallized films 20 and 22 is formed by forming a metal vapor-deposited film 24 on a strip-shaped plastic film 21. At least the metal vapor-deposited film 24 of the first metallized film 20 is formed in the film width direction. It is divided into a number of power storage units 24 </ b> A by an extended non-evaporation unit, that is, a power storage unit division margin 26. Further, a vertical margin 32 having a constant width is formed on each of the metallized films 20 and 22 along the side edge opposite to the side on which the electrodes 28 and 30 are sprayed, so as to prevent a short circuit between the metal deposition films 24. It has become. In addition, as the second metallized film, the same film as the first metallized film is often used in the opposite direction.

According to such a film capacitor,
Even if the metal deposition films 24 of the films 20 and 22 are short-circuited, the metal deposition film 24 is heated by an excessive current at the junction 34 between the power storage unit 24A of the first metallized film 20 and the electrode 28 at that position. And evaporate. Metal deposition film 2
The thickness of the portion 4 is uniform.
The reason why evaporation occurs only in the case is that the electric resistance of the junction interface with the electrode 28 is higher than the others. Due to this fuse action, the power supply to the power storage unit 24A including the short-circuited portion is stopped, so that the capacitor can be prevented from being overheated, etc., and the security can be improved.

[0005]

As described above, the reason why a fuse action occurs at the boundary portion 34 between the electrode 28 and the power storage unit 24A when a short circuit occurs between the power storage units is that the electrode 28 and the power storage unit 24A The so-called imperfection of the connection with. However, since the incompleteness of the bonding varies for each power storage unit 24A, in practice, the connection between the electrode 28 and the power storage unit 24A is insufficient, and there is a place where disconnection is caused by a very slight corona discharge. In the first place, there are some places where a sufficient connection has not been made from the beginning, causing an increase in the instability of the capacitance and the tan δ value (dielectric tangent).

Therefore, in order to improve the stability of the capacitance and the tan δ value, a study has been made to improve the thermal spraying method of the electrode 28 and to improve the bonding property between the electrode 28 and the power storage unit 24A. In addition, there has been a problem that the electric resistance at the bonding interface 34 becomes low and sufficient fuse performance cannot be obtained.

In the film capacitor having the structure shown in FIG. 8, aluminum is generally used for the metal deposition film 24, and zinc which is easily sprayed is used for the electrodes 28 and 30. With this combination, the electrode 28 and the power storage unit 2
This is because the fuse performance is good because the junction resistance with 4A naturally increases.

On the other hand, recently, attention has been paid to zinc as a material of the metal deposition film 24. This is because, when the metal deposited film is formed of zinc instead of aluminum, there is an advantage that the metal deposited film is less likely to be lost due to corrosion or the like, and that the capacity is less reduced with time.

However, when zinc is used as the material of the metal deposition film 24, the adhesion between the metal deposition film 24 and the electrode 28 is too good because the same kind of metal is bonded.
There is a problem that the electric resistance of the fuse portion 34 is too small. In other words, while the capacity decrease over time can be suppressed,
It becomes difficult to obtain sufficient fuse performance. For this reason, when the metal deposition film 24 is formed of zinc, a simple margin shape cannot be adopted as shown in FIG. 8, and the electrode 28 and the power storage unit 24A are connected by a very thin fuse unit. It is necessary to adopt a more complicated margin shape, and there is a problem that manufacturing costs increase.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a metallized film and a film capacitor capable of improving reliability and homogeneity of fuse performance as compared with conventional products.

[0011]

In order to achieve the above object, a first metallized film according to the present invention comprises an insulating film, a metal deposited film formed on the film, and a metal deposited film formed on the film. A power storage section division margin that is a non-evaporated section divided into a number of power storage sections, and each of the power storage sections is arranged along the electrode connection end face in order from an electrode connection end face to which an electrode is to be connected. A thin portion extending from the thin portion, a thick portion having a larger thickness than the thin portion, and a flat portion having a smaller thickness than the thick portion.

A second metallized film according to the present invention is an insulating film, a metal deposited film formed on the film, and a non-deposited portion which is a non-deposited portion that divides the metal deposited film into a number of power storage portions. A thin section having a smaller section thickness than the flat part, which is the other part, is formed along the electrode connecting end surface to which the electrode is to be connected, having a section margin. It is characterized by.

On the other hand, a first film capacitor according to the present invention is characterized in that any one of the metallized films is used as a first metallized film, and a metal deposition film is formed on an insulating film on the first metallized film. A second metallized film is laminated, the end face for electrode connection of the metal vapor deposition film of the first metallized film is connected to a first electrode, and the metal vapor deposition film of the second metallized film is connected to a second electrode. Features.

In a second film capacitor according to the present invention, the metallized film having the thick portion is formed by a first film capacitor.
As a metallized film, a second metallized film formed by forming a metal vapor deposition film on an insulating film is laminated on the first metallized film, and one end of the second metallized film is formed on the first metallized film. In the state of being superimposed on the thick part, the electrode connection end of the metallized film of the first metallized film is placed in the first position.
An electrode is connected, and a metal deposition film of the second metallized film is connected to the second electrode.

[0015]

1 and 2 are a developed view and a partial sectional view, respectively, showing an embodiment of a film capacitor according to the present invention. In this film capacitor, a first metallized film 1 and a second metallized film 2 having the same width are superposed in parallel while being slightly shifted in the width direction, and wound in a cylindrical shape, and metal is applied to both ends of the cylindrical body. The first electrode 12 and the second electrode 14 are formed by spraying. Although not shown, in the product capacitor, leads are connected to both electrodes 12 and 14 and an exterior is formed entirely.

First and second metallized films 1,
2 is a metal-deposited film 4 formed on a strip-shaped plastic film 3. At least the metal-deposited film 4 of the first metallized film 1 has a thin non-deposited portion extending in the film width direction, that is, a lateral margin. It is divided into a number of rectangular power storage units 8 by a (power storage unit division margin) 10. In addition, each metallized film 1, 2
A strip-shaped vertical margin 6 having a constant width is formed along the side edge opposite to the side on which the electrodes 12 and 14 are sprayed, to prevent short-circuit between the metal deposition films 4. In addition,
As shown in FIG. 2, as the second metallized film 2, the same film as the first metallized film 1 can be used in the opposite direction.

The feature of this embodiment is that, as shown in FIG. 3, each power storage unit 8 is arranged adjacent to the electrode connecting end face 4A in order from the electrode connecting end face 4A to which the electrodes 12, 14 are to be connected. A thin portion 8 having a constant width extending along the connection end face 4A.
C, a thick portion 8B having a constant width larger than the thin portion 8C, and a flat portion 8 having a smaller thickness than the thick portion 8B.
A is formed.

The thin portion 8C of this embodiment is different from the thick portion 8B
The thickness gradually decreases toward the electrode connection end face 4A from the center, and the thickness becomes minimum at the electrode connection end face 4A. On the other hand, the thick portion 8B takes the maximum thickness at a flat portion having a certain width, gradually decreases toward the flat portion 8A side, and continues to the flat portion 8A. Is substantially constant over the entire surface. Thus, the surface resistance value of the metal deposition film 4 has a distribution as illustrated in the graph of FIG. At the boundaries between the portions 8A, 8B and 8C, the metal deposition film 4
It is desirable that the thickness of the substrate is gradually changed.

As shown in FIG. 2, the metallized films 1 and 2 have an end (longitudinal margin 6) of the film 3 of the second metallized film 2 on the thick portion 8B of the first metallized film 1, (2) The first metallized film 1 is overlaid so that the end (the vertical margin 6) of the film 3 is located on the thick portion 8B of the metallized film 2. This is to prevent the metallized films 1 and 2 from being physically damaged when the metallized films 1 and 2 are rubbed by the ends of the metallized films 1 and 2 when the metallized films 1 and 2 are wound by a machine. When rubbed at the edge of the film, even if the metal deposited film 4 does not come off, the corrosion resistance of the metal deposited film 4 is reduced at that portion, and the metal deposited film 4 is partially removed by oxygen and moisture in the air. A phenomenon of disappearing (oxidizing and becoming transparent) has been confirmed. In particular, since the metal deposition film 4 tends to be thin recently, the above-mentioned effect is important in practical use.

The material of the metal-deposited film 4 is not limited in the present invention.
Although any material such as zinc alloy, aluminum, and aluminum alloy can be used, zinc or a zinc alloy is particularly preferable for the present invention. When zinc or a zinc alloy is used, the effect of the present invention is most remarkable, and since the loss of a metal deposition film due to corrosion or the like is smaller than when aluminum or an aluminum alloy is used, the capacitance of the capacitor over time is reduced. This is because there is an advantage that the decrease in the amount is small.

The thickness and width of the flat portion 8A, the thick portion 8B, and the thin portion 8C of the power storage unit 8 are not particularly limited in the present invention, but are preferable when the metal deposition film 4 is formed of zinc or a zinc alloy. The ranges are as follows. Each numerical value is converted into a surface resistance value (Ω / □).

The thickness T of the metal deposition film 4 in the flat portion 8A
1 is preferably 2 to 50 Ω / □, more preferably 5
３０30Ω / □. When the thickness is more than 2Ω / □, when a short circuit or the like occurs between the metal vapor-deposited films 4, the property of recovering insulation by evaporating around the short-circuited portion, so-called self-healing property is deteriorated. This is because if it is thinner, it is difficult to form a uniform film.

It is essential that the maximum thickness T2 of the metal deposition film 4 in the thick portion 8B is larger than the thickness T1 of the metal deposition film 4 in the flat portion 8A.
More preferably, it is 1 to 8 Ω / □. It is not usually necessary to increase the thickness to less than 1 Ω / □, and if it is less than 10 Ω / □, the effect of preventing film abrasion is insufficient.

The thickness of the thin portion 8C is preferably 3 to 50.
Ω / □, and more preferably 4 to 30Ω / □. There is usually no need to increase the thickness to less than 3Ω / □, 50Ω
If it is thinner than //, the conductivity with the electrodes 12 and 14 may be non-uniform. The value of [surface resistance value in thickness T3 portion] / [surface resistance value in thickness T2 portion] is 1.
It is preferably from 2 to 4, more preferably from 1.3 to 2.5.

The width W1 of the thin portion 8C is not limited, but is preferably 0.2 to 2.0 mm, more preferably 0.3 to 2.0 mm.
1.0 mm. The width W1 is defined as a distance from the electrode connection end face 4A to the maximum thickness point of the thick portion 8B, as shown in FIG. If W1 is smaller than 0.2 mm, a sufficient fuse effect cannot be obtained, and 2.0 mm
If the width is too large, the shift width in the width direction between the first metallized film 1 and the second metallized film 2 must be increased, so that not only the effective electrode width is reduced and the capacitor capacity is reduced, but also the end face is reduced. This causes harmful effects such as bending and poor contact of the electrodes. Note that, in FIG.
Although the thickness of C decreases linearly from the thick portion 8B to the electrode connecting end surface 4A, a flat portion having a constant thickness may be provided in the thin portion 8C, or the electrodes 12 and 14 may be provided. In order to improve the connectivity, the thickness may be slightly increased again at the electrode connection end face 4A. Sprayed electrode 12,
As shown in FIG. 2, 14 penetrates into the inside of the electrode connection end face 4A and covers a part from the tip of the thin portion 8C.

Although the width W2 of the thick portion 8B is not limited, it is preferably 0.2 to 3.0 mm, more preferably 0.5 to 3.0 mm.
1.5 mm. In addition, this width W2 is the thin portion 8C.
Is defined as the width from the boundary to the flat portion 8A. Width W
If the thickness 2 is smaller than 0.2 mm, a sufficient effect of preventing the film from being rubbed cannot be obtained, and if it is wider than 3.0 mm, the self-healing property of the metal deposition film 4 may be deteriorated. Although the top of the thick portion 8B is a flat surface in FIG. 3, it goes without saying that the flat surface may be eliminated and a smooth curved surface may be used.

When the metal deposition film 4 is formed of aluminum or an aluminum alloy, a preferable surface resistance value is different from that formed of zinc, and the thickness T of the flat portion 8A is different.
1 is preferably 1 to 50Ω / □, more preferably 2 to 50Ω / □.
30 / □, the maximum thickness T2 of the thick portion 8B is preferably 1 to 10Ω / □, more preferably 1 to 8 / □, and the minimum thickness T3 of the thin portion 8C is preferably 2 to 30Ω.
/ □, more preferably 3 to 25 / □. The reason for limitation and the width of each part are the same as in the case of zinc or the like.

In order to form the thick portion 8B and the thin portion 8C, a mask is arranged between the film 3 and the deposition source when forming the metal deposition film 4, and the amount of metal adhesion to the film 3 is partially reduced. Control. In order to form the thick portion 8B, a second evaporation source may be used.

The materials of the electrodes 12 and 14 are not limited.
Generally, zinc or a zinc alloy is used. In particular, when zinc or a zinc alloy is used as the material of the metal deposition film 4, it is preferable that the material be similar from the viewpoint of adhesion. However, it is not limited to zinc or a zinc alloy.

The material of the plastic film 3 is not limited, but is preferably one selected from polyethylene terephthalate, polypropylene, polystyrene, polycarbonate, polytetrafluoroethylene, and polyethylene;
Alternatively, it is formed by laminating two or more kinds, and the thickness is set as necessary.

According to the embodiment having the above-described structure, since the thin portion 8C is formed, even when the connectivity between the electrode connecting end face 4A of the metal deposition film 4 and the electrodes 12 and 14 is enhanced, the connection interface is formed. Uniform and good fuse characteristics can be obtained without depending on the generated electric resistance.

In particular, when the metal deposition film 4 is formed of zinc or a zinc alloy, and the electrodes 12 and 14 are sprayed with zinc, the bonding properties between the electrodes 12 and 14 and the metal deposition film 4 are too good and sufficient. Even if there is no connection resistance, a uniform and good fuse characteristic can be obtained by the thin portion 8C, so that a simple margin shape as shown in FIG. Self-healing properties are obtained.

Further, since a thick portion 8B is formed between the thin portion 8C and the flat portion 8A, and the other metalized film end is overlapped on the thick portion 8B, the laminated film is wound around a cylinder. Even when it is made into a body, it is possible to prevent the metal deposition film 4 from being damaged or oxidized due to rubbing at the film edge, and from this point, reliability can be improved. In addition, instead of winding a long film into a cylindrical shape,
Even in a multilayer capacitor in which a large number of rectangular films are alternately stacked, an effect of similarly preventing film rubbing during stacking can be obtained.

[Second Embodiment] FIGS. 4 and 5 are views similar to FIGS. 2 and 3, showing a film capacitor according to a second embodiment of the present invention. The difference of the second embodiment from the first embodiment is that the second embodiment directly extends from the flat portion 8A to the thin portion 8C without the thick portion 8B. In the thin portion 8C of this example, the thickness gradually decreases from the flat portion 8A to the electrode connection end face 4A, whereby the surface resistance value of the metal deposition film 4 is as illustrated in the graph of FIG. Distribution. If the problem of rubbing of the metal deposition film 4 can be neglected, such a configuration is also feasible.

The width W3 of the thin portion 8C in this embodiment
Is not limited, but is preferably 0.2 to 2.0 mm, more preferably 0.3 to 1.0 mm. The width W3 is defined as the width of a portion thinner than the flat portion 8A as shown in FIG. If the width W3 is small, a sufficient fuse effect cannot be obtained, and if the width W3 is too large, the width of the first metallized film 1 and the second metallized film 2 in the width direction must be increased. In addition to the decrease in capacitance, the capacitance of the capacitor decreases, and in addition, adverse effects such as bending of the end face and poor contact of the electrodes occur, which is not preferable. In FIG. 5, the thickness of the thin portion 8C is equal to that of the flat portion 8A.
From the side to the electrode connection end face 4A side, a flat portion having a constant thickness may be provided in the thin portion 8C, or the electrode connection may be made in order to improve the connectivity with the electrodes 12 and 14. The thickness may slightly increase again at the use end face 4A.

The thickness T of the metal deposition film 4 in the flat portion 8A
1 is preferably 1 to 13 Ω / □, and more preferably 1
-10Ω / □. When the thickness is more than 1 Ω / □, when a short circuit or the like occurs between the metal vapor-deposited films 4, the property that the area around the short-circuited portion evaporates to recover the insulation, that is, the so-called self-healing property is deteriorated. This is because if it is thinner, it is difficult to form a thinner thin portion 8C. The thin portion 8C is
As in the first embodiment, it is preferably 3 to 50 Ω / □, and more preferably 4 to 30 Ω / □. 3Ω / □
It is not usually necessary to increase the thickness to less than 50 Ω / □, and if it is less than 50 Ω / □, the conductivity with the electrodes 12 and 14 may become non-uniform. Further, [Surface resistance value at thickness T3 portion]
/ [Surface resistance value in flat portion 8A] is 1.2 to 4
Is more preferable, and more preferably 1.3 to 2.5.

When the metal deposition film 4 is formed of aluminum or an aluminum alloy, the preferable surface resistance value is different from that formed of zinc, and the thickness T of the flat portion 8A is different.
1 is preferably 1 to 10Ω / □, more preferably 1 to 10Ω / □.
8 / □, and the minimum thickness T3 of the thin portion 8C is preferably 2 to 30 Ω / □, more preferably 3 to 25 / □. The reason for limitation and the width of each part are the same as in the case of zinc or the like.
Other configurations may be the same as in the first embodiment.

It should be noted that the present invention is not limited to only the above embodiments, and various modifications can be made without departing from the paper of the present invention. For example, the corrosion resistance of the metal-deposited film 4 may be improved by depositing an inorganic oxide such as SiOx (x is an arbitrary number of 1 to 2) on and / or below the metal-deposited film 4. Further, by forming an intermittent vertical margin in the thin portion 8C along the longitudinal direction of the film 3, a narrow fuse portion may be formed in the thin portion 8C. In this case, in combination with the small thickness of the thin portion 8C, the operating current of the fuse portion can be significantly reduced.

[0039]

EXAMPLE On a polypropylene film having a thickness of 4 μm and a width of 50 mm, a metal deposited film 4 having various thicknesses, a vertical margin 6 and a horizontal margin 1 in the first film shape shown in FIG.
No. 0 was formed, and two of the same metalized films obtained were stacked in the opposite direction and wound in an elliptic column shape. The width of the vertical margin 6 of the metallized film is 2.0 mm,
The pitch of the horizontal margin 10 was 17 mm, the width of the horizontal margin 10 was 0.3 mm, and the shift width of the films 1 and 2 was 1 mm. In the embodiment, the width of the thin portion 8C is set to 0.7.
mm, and the width of the thick portion 8B was 1 mm. The specification of the capacitor was 60 μF / 200V AC. The obtained capacitor precursor was subjected to a security test and an oxidation test of the metal deposited film.

[Security test] Electrodes 12 and 14 are formed by spraying zinc on both ends of a capacitor precursor, and leads are connected to the capacitor precursor to test the security of a capacitor with a security mechanism according to JIS C4908 9.13 (2). Was done. 1 per type
A test was performed for each of the 0 fuses, and the evaluation was made based on the ratio of those in which the fuse was activated. Table 1 shows the results.

[Oxidation test] If the metallized film 4 is rubbed by the end of the metallized film, the corrosion resistance is reduced and oxidation is liable to occur, and the rubbed portion of the metallized film 4 disappears (oxide). Phenomena). By utilizing this phenomenon, the resistance to film rubbing was evaluated. Specifically, after placing the capacitor precursor (without the exterior) in a constant temperature and humidity chamber at 40 ° C. and a relative humidity of 90% for 48 hours, the metallized film was released and the state of the metal deposition film 4 was observed. Table 1 shows the results. In the table, ○ indicates that oxidation of the metal deposited film was not observed, △ indicates that oxidation was occurring in spots in some places, and x indicates that oxidation of the film occurred continuously.

[0042]

[Table 1]

As is clear from Table 1, all of Examples 1 to 6 in which the thin portion 8C was formed exhibited good security. Further, in Example 5 in which the thicker portion 8B was further formed, oxidation caused by film rubbing was also prevented.

[0044]

As described above, according to the metallized film and the film capacitor of the present invention,
A thin portion with a high surface resistance is formed along the electrode connection end surface of the metal deposition film, so even if the connectivity between the electrode connection end surface and the electrode is enhanced, without depending on the electric resistance generated at the connection interface It is possible to obtain uniform and good fuse characteristics.

In the case where a metal vapor deposition film is formed of zinc or a zinc alloy and zinc is sprayed as an electrode, even if the bonding property between the electrode and the metal vapor deposition film is too good to generate sufficient connection resistance, Since uniform and good fuse characteristics can be obtained by the thin portion, it is possible to adopt a simple margin shape, and to obtain good self-healing characteristic peculiar to the zinc vapor deposition film.

Further, when a thick portion is formed between the thin portion and the flat portion of the metal-deposited film, and the end portion of the other metallized film is overlapped on this thick portion, a laminated film is manufactured. Sometimes, it is possible to prevent the metal deposited film from being damaged or oxidized due to being rubbed at the film edge,
From this point, reliability can be improved.

[Brief description of the drawings]

FIG. 1 is a development view of a film capacitor according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a part of the film capacitor.

FIG. 3 is an enlarged sectional view of a main part of the film capacitor.

FIG. 4 is a partial cross-sectional view of a film capacitor according to a second embodiment of the present invention.

FIG. 5 is an enlarged sectional view of a main part of the film capacitor.

FIG. 6 is a graph showing a resistance change of the metallized film of the first embodiment.

FIG. 7 is a graph showing a resistance change of the metallized film of the second embodiment.

FIG. 8 is a development view of a conventional film capacitor.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st metallized film 2 2nd metallized film 3 film 4 Metal deposition film 4A Electrode connection end surface 6 Vertical margin 8 Power storage part 8A Flat part 8B Thick part 8C Thin part 10 Power storage part division margin 12 First electrode 14 Second electrode

Claims (7)

[Claims] An insulating film, a metal deposition film formed on the film, and a power storage unit division margin that is a non-vapor deposition unit that divides the metal vapor deposition film into a number of power storage units; In each power storage unit, in order from the side of the electrode connection end surface to which the electrode is to be connected, a thin portion extending along the electrode connection end surface, a thick portion having a greater thickness than the thin portion,
A metallized film comprising a flat portion having a smaller thickness than the thick portion. 2. An insulating film, a metal deposition film formed on the film, and a power storage unit division margin that is a non-vapor deposition unit that divides the metal vapor deposition film into a plurality of power storage units, A metallized film, wherein a thin portion having a smaller thickness than a flat portion, which is another portion, is formed along an electrode connection end surface to which an electrode is to be connected in each power storage unit. 3. The metallized film according to claim 1, wherein the metal deposition film is formed of zinc or a zinc alloy, and the thickness of the metal deposition film in the thin portion is 3 to 50 Ω in terms of surface resistance. / □, and the maximum thickness of the metal deposition film in the thick part is 1 to 10 in terms of surface resistance.
Ω / □, and the thickness of the metal deposition film in the flat portion is 2 to 50 Ω / □ in terms of surface resistance. 4. The metallized film according to claim 2, wherein the metal-deposited film is formed of zinc or a zinc alloy, and the thickness of the metal-deposited film in the thin portion is 3 to 50 Ω in terms of surface resistance. / □, and the thickness of the metal deposition film in the other portion is 1 to 13Ω in terms of surface resistance.
/ □ is a metallized film. 5. A second metallized film comprising the metallized film according to claim 1 as a first metallized film, and a metallized film formed on an insulating film on the first metallized film. A film, wherein a film is laminated, the electrode connection end face of the metallized film of the first metallized film is connected to a first electrode, and the metallized film of the second metallized film is connected to a second electrode. Capacitors. 6. The film capacitor according to claim 5, wherein each of the metal-deposited films is formed of zinc or a zinc alloy, and the electrode connection end face of the first metallized film is formed of zinc or a zinc alloy. Wherein the first electrode is connected. 7. A metallized film according to claim 1 or 4 as a first metallized film, and a second metallized film formed by forming a metal deposition film on an insulating film on the first metallized film. Then, one end of the second metallized film is connected to the first metallized film.
In the state of being superimposed on the thick part of the metallized film,
A film capacitor, wherein the electrode connection end of the metallized film of the first metallized film is connected to a first electrode, and the metallized film of the second metallized film is connected to a second electrode.