CN104900403A - Double-faced metalized electrical membrane for capacitor - Google Patents

Double-faced metalized electrical membrane for capacitor Download PDF

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Publication number
CN104900403A
CN104900403A CN201510366509.2A CN201510366509A CN104900403A CN 104900403 A CN104900403 A CN 104900403A CN 201510366509 A CN201510366509 A CN 201510366509A CN 104900403 A CN104900403 A CN 104900403A
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CN
China
Prior art keywords
capacitor
dielectric layer
electrical membrane
faced
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510366509.2A
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Chinese (zh)
Inventor
陈杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG QIXING CAPACITOR CO Ltd
Original Assignee
ZHEJIANG QIXING CAPACITOR CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHEJIANG QIXING CAPACITOR CO Ltd filed Critical ZHEJIANG QIXING CAPACITOR CO Ltd
Priority to CN201510366509.2A priority Critical patent/CN104900403A/en
Publication of CN104900403A publication Critical patent/CN104900403A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a double-faced metalized electrical membrane for a capacitor and belongs to the technical field of electrical membrane. With the adoption of a high vacuum metal deposition technology, a very thin and uniform metal film can be obtained, the uniform metal film provides guarantee for a good capacitance performance, and differences in capacity of capacitors and inconsistence of sizes of coiled capacitor bodies can be prevented. In addition, as the vapor-plated metal film is very thin, the good smoothness of a film dielectric layer in the vapor plating process can be maintained, and the technical problem that thermal deformation is difficult to control in the prior art can be effectively solved. The double-faced metalized electrical membrane for the capacitor provided by the invention is composed of a polyethylene glycol terephthalate dielectric layer and an aluminium layer vapor plated on the polyethylene glycol terephthalate dielectric layer, grooves are parallelly arranged in the aluminium layer at intervals, and the thickness of the aluminium layer is of 2-3.5[mu]m.

Description

A kind of capacitor two-sided metallization electrical membrane
Technical field
The invention belongs to electrical membrane technical field, relate to a kind of capacitor two-sided metallization electrical membrane.
Background technology
China successively introduces nearly hundred vacuum coating production lines from external, wherein in the majority with general filming equipment.At electrical membrane metallizing art, because coating process, separating and cutting process difficulty are large, rate of finished products is difficult to control, and domestic enterprise seldom sets foot in.The capacitor that such film makes, with advantages such as capacity are large, good stability, self-healing ability are strong, more and more dominates the market.Consider that electrical membrane increasing market is large, but be difficult to control due to electrical membrane thermal deformation, be very limited in actual applications.
Summary of the invention
Technical problem to be solved by this invention is just to provide a kind of capacitor two-sided metallization electrical membrane, and thermal deformation can be well controlled, and stays limit precision high.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of capacitor two-sided metallization electrical membrane, be made up of at the aluminium lamination of described PETG dielectric layer surface PETG dielectric layer and evaporation, described aluminium lamination spaced surface is provided with groove parallel to each other, and the thickness of described aluminium lamination is 2 ~ 3.5 μm.
Wherein, PETG (Polyethylene terephthalate is called for short PET), resistance to creep, resistance to fatigue resistance, abrasion-resistant and good stability of the dimension, wear away little and hardness is high, have excellent toughness, electrical insulation capability is good, and temperature influence is little, nontoxic, weatherability, chemical proof good stability, water absorption rate is low, weak acid resistant and organic solvent, is quite desirable dielectric layer material.Adopt high vacuum metal deposition technique in the present invention, in high vacuum conditions, will be deposited metal material and be heated to and melt and flash to gaseous state, vaporous atom or molecule are deposited on membrane surface with condensing mode, form metallic diaphragm.Like this, the metallic diaphragm obtained can be quite thin, and very even, meanwhile, uniform metallic diaphragm be also good capacitive property guarantee, after avoiding the capacity of capacitor to occur difference and winding, capacitor body is not of uniform size causes.Because the metallic diaphragm of evaporation is quite thin, and, metallic diaphragm is provided with groove, can slight deformation adjusts in thermal deformation situation, be difficult to the technical problem controlling thermal deformation in fine solution prior art, the good planarization of thin film dielectric layer can be kept in evaporate process.
Preferably, the equal evaporation of upper and lower surface of described PETG dielectric layer has aluminium lamination.Form the two-sided metallization electrical membrane structure of A-B-A, thermal deformation can be well controlled, and stays limit precision high.
Preferably, described groove extends to PETG dielectric layer surface by aluminium lamination surface.Slight deformation can adjust in thermal deformation situation, the good planarization of thin film dielectric layer can be kept in evaporate process.
Preferably, the thickness of described aluminium lamination is 3 μm.
Preferably, the thickness of described PETG dielectric layer is 4.8 μm.
Compared with prior art, advantage of the present invention is: capacitor two-sided metallization electrical membrane of the present invention adopts high vacuum metal deposition technique, in high vacuum conditions, metal material will be deposited be heated to and melt and flash to gaseous state, vaporous atom or molecule are deposited on membrane surface with condensing mode, form metallic diaphragm.Like this, the metallic diaphragm obtained can be quite thin, and very even, meanwhile, uniform metallic diaphragm be also good capacitive property guarantee, after avoiding the capacity of capacitor to occur difference and winding, capacitor body is not of uniform size causes.Because the metallic diaphragm of evaporation is quite thin, and, metallic diaphragm is provided with groove, can slight deformation adjusts in thermal deformation situation, the good planarization of thin film dielectric layer can be kept in evaporate process, effectively solve in prior art the technical problem being difficult to control thermal deformation.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the invention will be further described:
Fig. 1 is the structural representation of a kind of capacitor two-sided metallization of the present invention electrical membrane embodiment 1.
Embodiment
As shown in Figure 1, for capacitor two-sided metallization electrical membrane embodiment 1 of the present invention, be made up of at the aluminium lamination 2 on described PETG dielectric layer 1 surface PETG dielectric layer 1 and evaporation, the equal evaporation of upper and lower surface of described PETG dielectric layer 1 has aluminium lamination 2.Described aluminium lamination 2 spaced surface is provided with groove 3 parallel to each other, and described groove 3 extends to PETG dielectric layer 1 surface by aluminium lamination 2 surface.The thickness of described PETG dielectric layer 1 is 4.8 μm.The thickness of described aluminium lamination 2 is 3 μm.
The capacitor two-sided metallization electrical membrane of the present embodiment adopts high vacuum metal deposition technique, in high vacuum conditions, to be deposited metal material to be heated to and to melt and flash to gaseous state, vaporous atom or molecule are deposited on membrane surface with condensing mode, form metallic diaphragm.Like this, the aluminium lamination 2 obtained can be quite thin, and very even, meanwhile, uniform aluminium lamination 2 be also good capacitive property guarantee, after avoiding the capacity of capacitor to occur difference and winding, capacitor body is not of uniform size causes.Because the aluminium lamination 2 of evaporation is quite thin, and, aluminium lamination 2 is provided with groove 3, can slight deformation adjust in thermal deformation situation, the good planarization of PETG dielectric layer 1 can be kept in evaporate process, effectively solve in prior art the technical problem being difficult to control thermal deformation.
Show through test, the condenser capacity made by capacitor two-sided metallization electrical membrane of the present invention is large, stability good, self-healing ability is strong, and rate of finished products increases by 30 ~ 50% than metallization vapor-deposited film of the prior art.
The foregoing is only specific embodiments of the invention, but technical characteristic of the present invention is not limited thereto, any those skilled in the art is in the field of the invention, and the change done or modification are all encompassed among the scope of the claims of the present invention.

Claims (5)

1. a capacitor two-sided metallization electrical membrane, it is characterized in that: be made up of at the aluminium lamination (2) on described PETG dielectric layer (1) surface PETG dielectric layer (1) and evaporation, described aluminium lamination (2) spaced surface is provided with groove (3) parallel to each other, and the thickness of described aluminium lamination (2) is 2 ~ 3.5 μm.
2. a kind of capacitor two-sided metallization electrical membrane as claimed in claim 1, is characterized in that: the equal evaporation of upper and lower surface of described PETG dielectric layer (1) has aluminium lamination (2).
3. a kind of capacitor two-sided metallization electrical membrane as claimed in claim 2, is characterized in that: described groove (3) extends to PETG dielectric layer (1) surface by aluminium lamination (2) surface.
4. a kind of capacitor two-sided metallization electrical membrane as claimed in claim 1, is characterized in that: the thickness of described aluminium lamination (2) is 3 μm.
5. a kind of capacitor two-sided metallization electrical membrane as described in Claims 1-4 any one, is characterized in that: the thickness of described PETG dielectric layer (1) is 4.8 μm.
CN201510366509.2A 2015-06-25 2015-06-25 Double-faced metalized electrical membrane for capacitor Pending CN104900403A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510366509.2A CN104900403A (en) 2015-06-25 2015-06-25 Double-faced metalized electrical membrane for capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510366509.2A CN104900403A (en) 2015-06-25 2015-06-25 Double-faced metalized electrical membrane for capacitor

Publications (1)

Publication Number Publication Date
CN104900403A true CN104900403A (en) 2015-09-09

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Country Status (1)

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CN (1) CN104900403A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10199751A (en) * 1997-01-14 1998-07-31 Mitsubishi Shindoh Co Ltd Metallized film and film capacitor
WO2000038204A1 (en) * 1998-12-22 2000-06-29 Matsushita Electric Industrial Co., Ltd. Method for producing wound plastic film capacitor
CN202268251U (en) * 2011-09-28 2012-06-06 长兴柏成电子有限公司 Metallization polyester film polyester film capacitor
CN202796443U (en) * 2012-10-11 2013-03-13 四川省科学城久信科技有限公司 A pulse capacitor formed by high-square-resistance multi-inner-string double-face metallized films
CN202839311U (en) * 2012-10-11 2013-03-27 四川省科学城久信科技有限公司 High-sheet-resistance multiple-inner-string double-faced metallized film production impulse capacitor
CN204668156U (en) * 2015-06-25 2015-09-23 浙江七星电容器有限公司 A kind of capacitor two-sided metallization electrical membrane

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10199751A (en) * 1997-01-14 1998-07-31 Mitsubishi Shindoh Co Ltd Metallized film and film capacitor
WO2000038204A1 (en) * 1998-12-22 2000-06-29 Matsushita Electric Industrial Co., Ltd. Method for producing wound plastic film capacitor
CN202268251U (en) * 2011-09-28 2012-06-06 长兴柏成电子有限公司 Metallization polyester film polyester film capacitor
CN202796443U (en) * 2012-10-11 2013-03-13 四川省科学城久信科技有限公司 A pulse capacitor formed by high-square-resistance multi-inner-string double-face metallized films
CN202839311U (en) * 2012-10-11 2013-03-27 四川省科学城久信科技有限公司 High-sheet-resistance multiple-inner-string double-faced metallized film production impulse capacitor
CN204668156U (en) * 2015-06-25 2015-09-23 浙江七星电容器有限公司 A kind of capacitor two-sided metallization electrical membrane

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