JPH02285618A - Metallized plastic film capacitor - Google Patents
Metallized plastic film capacitorInfo
- Publication number
- JPH02285618A JPH02285618A JP10683789A JP10683789A JPH02285618A JP H02285618 A JPH02285618 A JP H02285618A JP 10683789 A JP10683789 A JP 10683789A JP 10683789 A JP10683789 A JP 10683789A JP H02285618 A JPH02285618 A JP H02285618A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plastic film
- metallized plastic
- metallicon
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002985 plastic film Substances 0.000 title claims abstract description 35
- 229920006255 plastic film Polymers 0.000 title claims abstract description 35
- 239000003990 capacitor Substances 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000004804 winding Methods 0.000 claims abstract description 5
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 33
- -1 polypropylene Polymers 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/32—Wound capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、金属化プラスチックフィルムコンデンサに関
し、特に耐電流性能１．耐電圧性能を向上する蒸着電極
膜の構成に関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to metallized plastic film capacitors, and in particular to current-withstanding performance 1. The present invention relates to a structure of a vapor-deposited electrode film that improves withstanding voltage performance.
従来の技術
従来の金属化プラスチックフィルムコンデンサは、誘電
体プラスチックフィルムの少なくとも片側の面にマージ
ン部を残し電極としてアルミニウム、または亜鉛金属を
ほぼ均一の膜抵抗値で蒸着形成させた金属化プラスチッ
クフィルムを巻回、または積層してコンデンサ素子を構
成していた。Conventional technology Conventional metallized plastic film capacitors are made of a metalized plastic film in which aluminum or zinc metal is vapor-deposited with a substantially uniform film resistance as an electrode, leaving a margin on at least one side of a dielectric plastic film. They were wound or laminated to form a capacitor element.
しかしこのような金属化プラスチックフィルムコンデン
サでは、電極となる蒸着膜の膜抵抗値の大小によってメ
タリコン金属層との接続強度が左右されるため、コンデ
ンサに要求される性能の一つである耐電流性能を保つに
はある程度以下の膜抵抗値とする必要があった。一般的
には１〜６Ω／□の膜抵抗値を用いる場合が多い。However, in such metallized plastic film capacitors, the strength of the connection with the metallicon metal layer is affected by the film resistance of the vapor-deposited film that serves as the electrode, so current withstand performance, which is one of the performance requirements for capacitors, is affected. In order to maintain this, it was necessary to keep the membrane resistance value below a certain level. Generally, a membrane resistance value of 1 to 6 Ω/□ is often used.
発明が解決しようとする問題点
しかるに近年、コンデンサの小型化、大容量化、高耐電
圧化などの要求が高まるにともない、セルフヒーリング
性能が良好で高電位傾度設計のはかれる高抵抗膜、一般
的には６〜２０Ω／□の蒸着電極をも２金属化プラスチ
ツクフイルムが必要となったが、高抵抗膜とすることで
蒸着電極が薄膜になるため、メタリコン金属層との接合
強度が低下し、耐電流性能が劣る問題を含んでいた。そ
のため第４図のように上述の高抵抗膜のメタリコン金属
層接続側に低抵抗膜部を形成したものが検討されている
が、サージ電流による充放電試験においてｔａｎδが増
大し、信頼性に問題があった。Problems to be Solved by the Invention However, in recent years, as the demand for smaller capacitors, larger capacitance, higher voltage resistance, etc. has increased, high-resistance films with good self-healing performance and high potential gradient designs, and general For this purpose, a bimetalized plastic film was required for the vapor deposition electrode with a resistance of 6 to 20 Ω/□, but since the vapor deposition electrode becomes a thin film due to the high resistance film, the bonding strength with the metallicon metal layer decreases. This included the problem of poor current resistance. Therefore, as shown in Fig. 4, a structure in which a low resistance film part is formed on the metal layer connection side of the above-mentioned high resistance film is being considered, but tan δ increases in charge/discharge tests using surge current, resulting in reliability problems. was there.
問題点を解決するための手段
本発明は上述の問題を解決したもので、誘電体プラスチ
ックフィルムの少なくとも片側の面に形成した６〜２０
Ω／□の高抵抗膜部と、この電極のメタリコン金属層接
続側に形成した６Ω／□以下の低抵抗膜部と、その同一
フィルム面側のマージン部を介して他方のメタリコン金
属層接続側に形成した６Ω／□以下の低抵抗膜部とから
な蒸着金属膜を有する金属化プラスチックフィルムを巻
回、または積層してコンデンサ素子を構成したことを特
徴とする金属化プラスチックフィルムコンデンサである
。Means for Solving the Problems The present invention solves the above-mentioned problems.
A high resistance film part of Ω/□, a low resistance film part of 6Ω/□ or less formed on the metallicon metal layer connection side of this electrode, and the other metallicon metal layer connection side via the margin part on the same film side. This is a metallized plastic film capacitor characterized in that a capacitor element is constructed by winding or laminating a metallized plastic film having a vapor-deposited metal film and a low resistance film portion of 6 Ω/□ or less.
作用
金属化プラスチックフィルムコンデンサにおいては、電
極となる蒸着金属膜の抵抗値を６Ω／□以上とすること
でセルフヒーリング性能が良好となり、破壊電圧（ＢＤ
Ｖ）は著るしく向上するが、膜抵抗値か２０Ω／□以上
となると蒸着金属膜は化学的あるいは電気化学的に酸化
され易くなるため、電極の有効部となる蒸着金属膜の抵
抗値は６〜２０Ω／□の範囲で高抵抗化することにより
高耐電圧に設計できるとともに、その蒸着金属膜がメタ
リコン金属層と接続する部分は膜厚を厚くし、メタリコ
ン金属層の接続が安定良好となる６Ω／□以下の低抵抗
部を形成し、さらに対極のメタリコン接続を補強する目
的で同一蒸着フィルム面上にマージン部を介して他方の
メタリコン金属層接続側に６Ω／□以下の低抵抗部の蒸
着金属膜部を形成することにより、両極のメタリコン金
属層との接続強度をより強固にした耐電流性能の良好な
金属化プラスチックフィルムコンデンサが得られる。In metallized plastic film capacitors, self-healing performance is good and breakdown voltage (BD
V) is significantly improved, but when the film resistance value exceeds 20Ω/□, the vapor-deposited metal film becomes easily oxidized chemically or electrochemically, so the resistance value of the vapor-deposited metal film, which becomes the effective part of the electrode, is By increasing the resistance in the range of 6 to 20 Ω/□, it is possible to design a high withstand voltage, and by increasing the thickness of the part where the vapor-deposited metal film connects with the metallicon metal layer, the connection between the metallicon metal layer is stable and good. A low resistance part of 6Ω/□ or less is formed on the other metal layer connection side via a margin on the same vapor-deposited film surface in order to further reinforce the metallicon connection of the opposite electrode. By forming the vapor-deposited metal film portion, a metallized plastic film capacitor having a stronger connection strength with the metallicon metal layers of both electrodes and good current-withstanding performance can be obtained.
実施例
以下、本発明を第１図〜第３図に示す実施例について説
明する。第１図において、誘電体プラスチックフィルム
１の片側に蒸着電極の容量形成に有効部である高抵抗膜
部２と、その蒸着電極がメタリコン金属層５と接続され
る部分の低抵抗膜部３を形成するとともに、同一蒸着面
側にマージン部６を介して対極となるメタリコン金属層
５と接続され、かつその補強となる低抵抗膜部４を形成
した蒸着電極を有する金属化プラスチックフィルムを巻
回して構成した金属化プラスチックフィルムコンデンサ
である。第２図は、他の実施例を示し、誘電体プラスチ
ックフィルムの片側にのみ蒸着電極を設けるのではなく
、両面に低抵抗膜部３、高抵抗膜部２およびマージン部
６を介して低抵抗膜部４の蒸着電極を形成させ、両面金
属化プラスチックフィルムとして構成した金属化プラス
チックフィルムコンデンサである。本発明のコンデサと
して第１図に示す厚さ７μｍ１幅１００ｍｍのポリプロ
ピレンフィルム１に高抵抗膜部２として１ｏΩ／□、そ
のメタリコン接続側に低抵抗膜部として３Ω／□および
その同一フィルム面側のマージン部６を介して他方のメ
タリコン接合側に低抵抗部として３Ω／□の抵抗値とな
る厚さで亜鉛金属を蒸着形成させた金属化プラスチック
フィルムにより巻回して構成した定格容量３０μＦのコ
ンデンサ（本発明例）と比較例として厚さ７μｍ１幅１
００ｍｍのポリプロピレンフィルムの片面に亜鉛金属を
１０Ω／□の抵抗値上なる厚さで均一に蒸着形成させた
金属化プラスチックフィルムにより巻回して構成した定
格容量３０μＦのコンデンサ（従来例−１）、および第
４図のように容量形成に有効部である高抵抗膜部２とし
て１０Ω／□とその低抵抗膜部３として３Ω／□となる
厚さで亜鉛金属を蒸着させて巻回して構成した定格３０
μＦのコンデンサ（従来例−２）を試作し、その耐電流
性能と耐電圧性能を比較評価した。耐電流性試験として
、有効電極長あたり３０Ａ／ｍの電流値となるサージ電
流で１０．０００回充電放電を繰り返し、その間のコン
デンサ特性である１ｋＨｚにおけるｔａｎδの経時変化
を測定した結果を第３図に示す。EXAMPLE The present invention will be described below with reference to an example shown in FIGS. 1 to 3. In FIG. 1, on one side of a dielectric plastic film 1, there is a high resistance film part 2 which is an effective part for forming the capacitance of the vapor deposited electrode, and a low resistance film part 3 where the vapor deposited electrode is connected to the metallic layer 5. At the same time, a metallized plastic film is wound around a metallized plastic film having a vapor-deposited electrode formed with a low-resistance film portion 4 that is connected to the metallikon metal layer 5 serving as a counter electrode via a margin portion 6 on the same vapor-deposited surface side and that serves as reinforcement thereof. This is a metallized plastic film capacitor composed of FIG. 2 shows another embodiment in which a vapor-deposited electrode is not provided only on one side of the dielectric plastic film, but a low-resistance film is provided on both sides through a low-resistance film part 3, a high-resistance film part 2, and a margin part 6. This is a metallized plastic film capacitor in which the vapor-deposited electrode of the membrane portion 4 is formed and is constructed as a double-sided metallized plastic film. As a capacitor of the present invention, a polypropylene film 1 with a thickness of 7 μm and a width of 100 mm shown in FIG. A capacitor (with a rated capacity of 30 μF) formed by winding a metallized plastic film on which zinc metal is vapor-deposited to a thickness that provides a resistance value of 3 Ω/□ is attached to the other metallization junction side via the margin portion 6 as a low resistance portion. Inventive example) and comparative example: thickness 7 μm 1 width 1
A capacitor with a rated capacity of 30 μF (conventional example-1) constructed by winding a metallized plastic film in which zinc metal is uniformly deposited on one side of a 00 mm polypropylene film to a thickness that exceeds the resistance value of 10 Ω/□ (conventional example-1); As shown in Fig. 4, the high resistance film part 2, which is an effective part for forming capacitance, has a thickness of 10Ω/□, and the low resistance film part 3 has a thickness of 3Ω/□. 30
A μF capacitor (Conventional Example-2) was prototyped, and its withstand current performance and withstand voltage performance were compared and evaluated. As a current resistance test, charging and discharging were repeated 10,000 times with a surge current of 30 A/m per effective electrode length, and the change in tan δ at 1 kHz, which is a capacitor characteristic, was measured over time. The results are shown in Figure 3. Shown below.
また、耐電圧性能試験として、本発明のコンデンサをＡ
Ｃ３００Ｖより印加を開始し、１分間印加する毎に５０
Ｖずつ増加させ破壊した時点の電圧を破壊電圧値として
測定したが２００〜２０７ Ｖ ／μｍ。In addition, as a withstand voltage performance test, the capacitor of the present invention was
Start applying from C300V and apply 50V every minute.
The breakdown voltage value was measured as the voltage at the time of breakdown by increasing V increments, and it was 200 to 207 V/μm.
Ｘ２０３Ｖ／μｍと異常は認められなかった。従来の金
属化プラスチックフィルムコンデンサである従来例−１
および従来例−２は、上述の実施例から明らかのように
その蒸着電極の形状および配置が異なり長期間における
耐電流性能を満足することはできていない。これに対し
て本発明による実施例−１のコンデンサでは、充放電１
０．０００回を経過しても１ｋＨｚにおけるｔａｎδの
増加は殆どなく安定することが実証された。また第２図
の電極配置で構成したコンデンサについて同様に試験し
たが、本発明の実施例−１と同様な結果が得られた。X203V/μm and no abnormality was observed. Conventional example-1, which is a conventional metallized plastic film capacitor
As is clear from the above-mentioned examples, Conventional Example-2 differs in the shape and arrangement of the vapor deposition electrodes and cannot satisfy the long-term current withstand performance. On the other hand, in the capacitor of Example-1 according to the present invention, the charging/discharging 1
It was demonstrated that even after 0.000 cycles, there was almost no increase in tan δ at 1 kHz and it remained stable. Further, a similar test was conducted on a capacitor configured with the electrode arrangement shown in FIG. 2, and the same results as in Example 1 of the present invention were obtained.
誘電体フィルムについては、ポリプロピレンフィルムの
他、ポリエチレンテレフタレート、ポリカーボネート、
ポリスチレン、ポリフェニレンスルフフィト、あるいは
それらの組合せの場合でも同様な傾向の結果が得られ、
また蒸着金属についても一般的な金属であるアルミニウ
ム、亜鉛はもちろん、銅、ニッケル、コバルト、金、銀
、あるいはそれらの合金であってもよい。また上述の誘
電体プラスチックフィルムを巻回せず、積層して構成し
ても同様な効果が得られる。In addition to polypropylene film, dielectric films include polyethylene terephthalate, polycarbonate,
Similar results were obtained with polystyrene, polyphenylene sulfite, or a combination thereof.
Further, the vapor-deposited metal may be not only common metals such as aluminum and zinc, but also copper, nickel, cobalt, gold, silver, or alloys thereof. Further, the same effect can be obtained even if the above-mentioned dielectric plastic film is not wound but laminated.
発明の効果
以上に明らかにされたように、本発明によれば従来の金
属化プラスチックフィルムコンデンサに比べて、長期間
における耐電流性能が著しく向上し信頼性の優れた性能
をもつコンデンサが得られる。As clarified above, the present invention provides a capacitor with significantly improved long-term withstand current performance and excellent reliability compared to conventional metallized plastic film capacitors. .
第１図および第２図はそれぞれ本発明による金属化プラ
スチックフィルムコンデンサの各々異なる実施例を示す
電極配置要部の断面図、第３図は本発明例と従来例とを
比較した金属化プラスチックフィルムコンデンサの耐電
流性試験特性図、第４図は従来の金属化プラスチックフ
ィルムコンデンサの電極配置要部の断面図である。
１：誘電体プラスチックフィルム
２：高抵抗膜部 ３．４：低抵抗膜部Figures 1 and 2 are cross-sectional views of the main parts of electrode arrangement showing different embodiments of the metallized plastic film capacitor according to the present invention, and Figure 3 is a comparison of the metallized plastic film of the present invention and the conventional example. FIG. 4, which is a characteristic diagram for a capacitor current test, is a sectional view of the main part of the electrode arrangement of a conventional metallized plastic film capacitor. 1: Dielectric plastic film 2: High resistance film part 3.4: Low resistance film part
Claims (1)
形成した６〜２０Ω／□の高抵抗膜部と、この電極のメ
タリコン金属層接続側に形成した６Ω／□以下の低抵抗
膜部と、その同一フィルム面側のマージン部を介して他
方のメタリコン金属層接続側に形成した６Ω／□以下の
低抵抗膜部とからなる蒸着金属膜を有する金属化プラス
チックフィルムを巻回または積層してコンデンサ素子を
構成したことを特徴とする金属化プラスチックフィルム
コンデンサ。A high resistance film part of 6 to 20 Ω/□ formed on at least one side of the dielectric plastic film, a low resistance film part of 6 Ω/□ or less formed on the metal layer connection side of this electrode, and the same film surface. A capacitor element was constructed by winding or laminating a metallized plastic film having a vapor-deposited metal film consisting of a low resistance film part of 6Ω/□ or less formed on the other metallicon metal layer connection side through the side margin part. A metallized plastic film capacitor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10683789A JPH02285618A (en) | 1989-04-26 | 1989-04-26 | Metallized plastic film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10683789A JPH02285618A (en) | 1989-04-26 | 1989-04-26 | Metallized plastic film capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02285618A true JPH02285618A (en) | 1990-11-22 |
Family
ID=14443820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10683789A Pending JPH02285618A (en) | 1989-04-26 | 1989-04-26 | Metallized plastic film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02285618A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04311017A (en) * | 1991-04-09 | 1992-11-02 | Matsushita Electric Ind Co Ltd | Dry type high-tension capacitor |
| JPH04123520U (en) * | 1991-04-26 | 1992-11-09 | 松下電器産業株式会社 | Dry high voltage phase advance capacitor |
| WO2002101770A1 (en) * | 2001-06-08 | 2002-12-19 | Matsushita Electric Industrial Co., Ltd. | Metallized film capacitor |
| CN1323409C (en) * | 2001-06-08 | 2007-06-27 | 松下电器产业株式会社 | Mfg. method of double-sided metallization film and metallization film capacitor using same |
| WO2011039957A1 (en) * | 2009-09-30 | 2011-04-07 | ダイキン工業株式会社 | Film capacitor |
| EP2667392A1 (en) * | 2012-05-25 | 2013-11-27 | Kojima Press Industry Co., Ltd. | Film capacitor element, film capacitor, and method of producing the film capacitor element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54104557A (en) * | 1978-02-03 | 1979-08-16 | Matsushita Electric Ind Co Ltd | Doubleeside metallized film capacitor |
-
1989
- 1989-04-26 JP JP10683789A patent/JPH02285618A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54104557A (en) * | 1978-02-03 | 1979-08-16 | Matsushita Electric Ind Co Ltd | Doubleeside metallized film capacitor |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04311017A (en) * | 1991-04-09 | 1992-11-02 | Matsushita Electric Ind Co Ltd | Dry type high-tension capacitor |
| JPH04123520U (en) * | 1991-04-26 | 1992-11-09 | 松下電器産業株式会社 | Dry high voltage phase advance capacitor |
| WO2002101770A1 (en) * | 2001-06-08 | 2002-12-19 | Matsushita Electric Industrial Co., Ltd. | Metallized film capacitor |
| US6954349B2 (en) | 2001-06-08 | 2005-10-11 | Matsushita Electric Industrial Co., Ltd. | Metallized film capacitor |
| CN1323409C (en) * | 2001-06-08 | 2007-06-27 | 松下电器产业株式会社 | Mfg. method of double-sided metallization film and metallization film capacitor using same |
| WO2011039957A1 (en) * | 2009-09-30 | 2011-04-07 | ダイキン工業株式会社 | Film capacitor |
| JP2011077349A (en) * | 2009-09-30 | 2011-04-14 | Daikin Industries Ltd | Film capacitor |
| EP2667392A1 (en) * | 2012-05-25 | 2013-11-27 | Kojima Press Industry Co., Ltd. | Film capacitor element, film capacitor, and method of producing the film capacitor element |
| US8861178B2 (en) | 2012-05-25 | 2014-10-14 | Kojima Press Industry Co., Ltd. | Film capacitor element, film capacitor, and method of producing the film capacitor element |
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