JPH10178270A - Manufacture of circuit board - Google Patents

Manufacture of circuit board

Info

Publication number
JPH10178270A
JPH10178270A JP33671796A JP33671796A JPH10178270A JP H10178270 A JPH10178270 A JP H10178270A JP 33671796 A JP33671796 A JP 33671796A JP 33671796 A JP33671796 A JP 33671796A JP H10178270 A JPH10178270 A JP H10178270A
Authority
JP
Japan
Prior art keywords
circuit board
brazing material
brazing
materials
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33671796A
Other languages
Japanese (ja)
Other versions
JP3526710B2 (en
Inventor
Toichi Takagi
東一 高城
Takemi Oguma
武美 小熊
Isao Sugimoto
勲 杉本
Ryuichi Terasaki
隆一 寺崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP33671796A priority Critical patent/JP3526710B2/en
Publication of JPH10178270A publication Critical patent/JPH10178270A/en
Application granted granted Critical
Publication of JP3526710B2 publication Critical patent/JP3526710B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable circuit board for a power module by reducing the occurrence of cracks without sacrificing the corrosion resistance and dielectric strength of the circuit board by forming multiple layers of brazing materials having different compositions on a ceramic substrate and bonding the brazing material layers to each other through heat treatment. SOLUTION: Multiple layers are formed by using many kinds of brazing materials prepared by changing the compositions or composition ratios of the materials. At the time of forming the multiple layers, such a method can be applied that the paste of various kinds of brazing materials are successively applied by using various brazing material applying methods, such as a screen printing method, a roll coater method, etc. In other words, the brazing materials having difference compositions are prepared and the materials are formed in multiple layers by repeating a process for successively applying and drying the brazing materials. The bonding condition of the layers to each other is not limited to a specific one, but can be selected appropriately in accordance with the compositions of the brazing materials and a metallic circuit board 5.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、高い信頼性、放熱
性を要する電子部品のパワーモジュール等に使用される
金属回路を有する回路基板の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a circuit board having a metal circuit used for a power module of an electronic component requiring high reliability and heat dissipation.

【0002】[0002]

【従来の技術】従来から各種電子機器の構成部品とし
て、アルミナ(Al2O3)、窒化アルミニウム(Al
N)、窒化珪素(Si3N4)、酸化ベリリウム(Be
O)などのセラミックス焼結体基板表面に導電層として
銅(Cu)回路板等を一体に接合した回路基板が広く使
用されている。
2. Description of the Related Art Conventionally, alumina (Al2O3), aluminum nitride (Al
N), silicon nitride (Si3N4), beryllium oxide (Be)
A circuit board in which a copper (Cu) circuit board or the like is integrally bonded as a conductive layer to the surface of a ceramic sintered body substrate such as O) is widely used.

【0003】このうち窒化アルミニウム回路基板は、熱
伝導性および電気伝導性に優れたCu等の金属により回
路を形成しているため、回路動作の遅延が低減するとと
もに回路配線の寿命も向上する。
[0003] Of these, the aluminum nitride circuit board forms a circuit with a metal such as Cu having excellent heat conductivity and electric conductivity, so that the delay of the circuit operation is reduced and the life of the circuit wiring is improved.

【0004】回路基板の製造方法としてはいくつかの方
法が知られているが、良好な生産性を得るためには、フ
ルエッチ法がよく使われる。フルエッチ法は、セラミッ
ク基板の全面にろう材ペーストを塗布し、それを覆うよ
うに全面に金属板を接合し、回路面とする金属板上に回
路パターンをエッチングレジストにより形成させた後、
エッチング処理して不要部分を除去する。さらに金属板
の腐食防止やハンダ接合性の向上のためにNiなどのメ
ッキ層により金属板の表面を被覆するのが一般的であ
る。
[0004] Several methods are known as a method for manufacturing a circuit board, but a full-etch method is often used to obtain good productivity. In the full-etch method, a brazing material paste is applied to the entire surface of the ceramic substrate, a metal plate is bonded to the entire surface so as to cover the paste, and a circuit pattern is formed on the metal plate serving as a circuit surface with an etching resist.
Unnecessary portions are removed by etching. Further, the surface of the metal plate is generally covered with a plating layer of Ni or the like in order to prevent corrosion of the metal plate and to improve solder jointability.

【0005】フルエッチ法は、生産性は良好であるが、
不要な回路部分の金属及びろう材除去工程を経るため、
エッチング後回路パターンの端や回路パターン間のセラ
ミック基板に他の方法に比較して大きな引張応力が残留
する特徴がある。特に窒化アルミニウムなどの機械的強
度の低いセラミック基板を用いた場合には、前記残留引
張応力のためにセラミック基板にクラックが発生するな
どの問題があった。
[0005] Although the full-etch method has good productivity,
To go through the unnecessary metal and brazing material removal process of the circuit part,
There is a feature that a large tensile stress remains on the end of a circuit pattern after etching and on a ceramic substrate between circuit patterns as compared with other methods. In particular, when a ceramic substrate having low mechanical strength such as aluminum nitride is used, there is a problem that cracks are generated in the ceramic substrate due to the residual tensile stress.

【0006】以上の問題に対して、例えば窒化アルミニ
ウム回路基板においては、ヒートショックやヒートサイ
クルなどの熱衝撃、熱履歴によって生じる損傷に対して
十分な耐久性をもたせるため、銅回路と窒化アルミニウ
ム基板との間に介在させる接合層の厚みを例えば20μ
m以上に厚くする方法(特開平6−196828号公
報)が提案されている。
In order to solve the above problems, for example, in an aluminum nitride circuit board, a copper circuit and an aluminum nitride board are required to have sufficient durability against thermal shock such as heat shock and heat cycle and damage caused by heat history. The thickness of the bonding layer interposed between
m (Japanese Patent Laid-Open No. 6-162828) has been proposed.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、接合層
の厚みを厚くすると不要なろう材の除去が困難となり、
その為残存ロウ材により絶縁不良の問題を生じることや
接合層での発生応力が大きくなるなど、未だ解決すべき
課題があった。したがって、残留応力の発生が小さく、
良好な接合層を形成する回路基板の製造方法を提供する
ことができれば、パワーモジュールへの実装工程や使用
時のヒートサイクルなどの熱応力によって金属回路の端
部や金属回路間のセラミック基板に発生するクラックを
低減し、さらにクラックが進展して破壊や絶縁耐圧の低
下に至り、使用不能となる問題を改善することができ
る。本発明は、上記状況に鑑みてなされたものであり、
回路基板の耐食性、絶縁耐圧を損なうことなく、クラッ
ク発生を低減させ、信頼性の高いパワーモジュール用回
路基板を提供することを目的とする。
However, if the thickness of the bonding layer is increased, it becomes difficult to remove unnecessary brazing material,
Therefore, there are still problems to be solved, such as a problem of insulation failure due to the remaining brazing material and an increase in stress generated in the bonding layer. Therefore, the occurrence of residual stress is small,
If we can provide a method of manufacturing a circuit board that forms a good bonding layer, it will be generated on the ceramic substrate at the edge of the metal circuit and the ceramic substrate between the metal circuits due to the thermal stress during the mounting process on the power module and the heat cycle during use It is possible to improve the problem that cracks are reduced and the cracks are further developed, leading to destruction and a decrease in withstand voltage, thereby making the device unusable. The present invention has been made in view of the above circumstances,
An object of the present invention is to provide a highly reliable circuit board for a power module, which reduces the occurrence of cracks without impairing the corrosion resistance and dielectric strength of the circuit board.

【0008】[0008]

【課題を解決するための手段】本発明者らは、ろう材を
用いてセラミック基板に金属回路板を接合する方法につ
いて種々検討した結果、従来のようにろう材を1層形成
するのではなく、組成の異なるろう材を多層に形成する
ことにより、回路基板のクラック発生を抑制できること
を見出し、本発明を完成した。
The present inventors have conducted various studies on a method of joining a metal circuit board to a ceramic substrate using a brazing material. As a result, instead of forming a single layer of the brazing material as in the prior art, The present inventors have found that the formation of cracks on a circuit board can be suppressed by forming brazing materials having different compositions in multiple layers, and completed the present invention.

【0009】すなわち、本発明はろう材を用いてセラミ
ック基板に金属回路板を接合する回路基板の製造方法で
あって、組成の異なるろう材をセラミックス基板上に多
層に形成した後に熱処理して接合する回路基板の製造方
法である。
That is, the present invention relates to a method of manufacturing a circuit board for joining a metal circuit board to a ceramic substrate using a brazing material. This is a method for manufacturing a circuit board.

【0010】更に、ろう材中の活性金属がTi及び/又
はZrである回路基板の上記製造方法である。
Further, there is provided the above method for producing a circuit board wherein the active metal in the brazing material is Ti and / or Zr.

【0011】更に、 セラミック基板に接する層のろう
材中の活性金属の含有率が、他の層のろう材の活性金属
含有率より高い上記に記載の回路基板の製造方法であ
る。
Further, there is provided the method for manufacturing a circuit board according to the above, wherein the active metal content in the brazing material in the layer in contact with the ceramic substrate is higher than the active metal content in the brazing material in the other layers.

【0012】[0012]

【発明の実施の形態】本発明に用いるセラミック基板と
してはアルミナ(Al2O3)などの酸化物はじめ、特
に制限はないが、熱膨張係数の小さい窒化アルミニウム
(AlN)や窒化珪素(Si3N4)などの窒化物系の
セラミック基板では、本発明の効果が大きい。さらに具
体的に窒化アルミニウムをセラミック基板として用いる
場合には、良好な放熱性を示すためには、熱伝導率が8
0W/mK以上のものが適しており、曲げ強さは、回路
基板形成後の強さに影響を及ぼすため350MPa以上
のものが適当である。また、セラミック基板の形状は通
常矩形であることが多いが、形状は用途によって適宜選
択されるものであり、本発明は回路基板の形状に何ら制
約を受けるものではない。セラミック基板の厚さは、要
求される回路基板の強さによって異なるが、通常、0.
3mmから1.5mmのものが使われる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Ceramic substrates used in the present invention include oxides such as alumina (Al2O3) and nitrides such as aluminum nitride (AlN) and silicon nitride (Si3N4) having a small coefficient of thermal expansion, although not particularly limited. The effect of the present invention is large in a physical ceramic substrate. More specifically, when aluminum nitride is used as a ceramic substrate, a thermal conductivity of 8
A material having a strength of 0 W / mK or more is suitable, and a material having a flexural strength of 350 MPa or more is suitable because the strength after forming the circuit board is affected. The shape of the ceramic substrate is usually rectangular in many cases, but the shape is appropriately selected depending on the application, and the present invention is not limited at all by the shape of the circuit board. The thickness of the ceramic substrate varies depending on the required strength of the circuit board.
Those having a size of 3 mm to 1.5 mm are used.

【0013】セラミック基板の片面に接合する金属回路
板、及びその裏面に接合する金属放熱板の材質は、銅、
ニッケル、アルミニウム、モリブデン、タングステン等
の純金属もしくは合金が用いられる。金属回路又は金属
放熱板の厚さは0.1〜2.0mmが通常使われてい
る。
The material of the metal circuit board bonded to one side of the ceramic substrate and the metal radiator plate bonded to the back side are copper,
Pure metals or alloys such as nickel, aluminum, molybdenum, and tungsten are used. The thickness of the metal circuit or the metal radiator plate is usually 0.1 to 2.0 mm.

【0014】接合する金属回路の厚さは極めて重要で、
0.075mm程度の厚さでは、活性金属法による接合
の場合、接合時に若干の荷重をかけるため、金属板の膨
張が妨げられ、金属板にシワを生じることがあり、量産
性に欠けるという問題がある。従って、0.1mm以上
のものを用いるのが好ましいが、あまり厚くなると、接
合金属板による熱応力によって、金属回路の剥離やセラ
ミック基板にクラックが発生するようになり、2.0m
m以下とする必要がある。
The thickness of the metal circuit to be joined is extremely important,
With a thickness of about 0.075 mm, in the case of joining by the active metal method, a slight load is applied at the time of joining, so that expansion of the metal plate is hindered, wrinkles may be generated on the metal plate, and mass productivity is poor. There is. Therefore, it is preferable to use one having a thickness of 0.1 mm or more.
m or less.

【0015】本発明に用いるろう材は使用するセラミッ
ク基板や金属回路板の材質により一般に使用されている
ろう材の組成系を適宜選択すればよい。本発明の要点は
これらのろう材を組成あるいは組成比を変えて多種類用
い、それらのろう材を多層に形成することである。多層
にする方法としては通常適用されているように予め準備
した多種類のろう材ペーストをスクリーン印刷法、ロー
ルコーター法などの各種ろう材塗布法を用いて順次多層
に塗布する手法が適用可能である。すなわち、組成の異
なるろう材を準備し、目的の構成にしたがって順次ろう
材を塗布し、乾燥する工程を繰り返すことにより組成の
異なるろう材を多層に形成することができる。
The brazing material used in the present invention may be appropriately selected from the composition system of the generally used brazing material depending on the material of the ceramic substrate or metal circuit board to be used. The gist of the present invention is to use many kinds of these brazing materials with different compositions or composition ratios and to form these brazing materials in multiple layers. As a method of forming a multilayer, it is possible to apply a method of sequentially applying multiple types of brazing material paste prepared in advance as generally applied using various brazing material application methods such as a screen printing method and a roll coater method. is there. That is, a brazing material having a different composition can be formed in multiple layers by preparing a brazing material having a different composition, sequentially applying the brazing material in accordance with a desired configuration, and repeating the drying process.

【0016】例えば、セラミック基板が窒化アルミニウ
ムや窒化珪素などの窒化物系であり、金属回路板の材質
が銅の場合には、銀、銅及び活性金属を含むろう材が好
ましい。ここで、使用する活性金属ろう材は、半導体部
品組立時に使用するハンダの融点以上のものであれば、
特に限定されるものではないが、銀−銅の共晶を利用し
た活性金属ろう材が最も一般的である。活性金属として
は、Ti、Zr、Hfが実績があり、好ましいといえ
る。活性金属は単に金属元素単体だけを云うのではな
く、接合温度までに、活性金属として作用するこれら、
Ti、Zr,Hfの合金、或いは化合物も使用できる。
例えば、水素化チタンである。このうち、特にTi及び
/又はZrを含むろう材が接合強度などで好適である。
また、セラミック基板に接するろう材中の活性金属含有
率が、他の層のろう材の活性金属含有率より高い事が必
要である。その理由としてセラミックス基板に接する層
の活性金属成分の移動距離が少ない為、セラミック基板
との反応が効率良く行われ、接合状態が良好となり、接
合強度の向上や残留応力の低減が達成されると考えられ
る。結果得られた回路基板の信頼性が向上する。なお、
これらのろう材中の活性金属を含むAg−Cu系ろう材
の融点は組成によって異なるが800〜900℃程度で
ある。
For example, when the ceramic substrate is a nitride-based material such as aluminum nitride or silicon nitride and the material of the metal circuit board is copper, a brazing material containing silver, copper and an active metal is preferable. Here, if the active metal brazing material used has a melting point equal to or higher than the melting point of the solder used in assembling semiconductor components,
Although not particularly limited, an active metal brazing material using a silver-copper eutectic is the most common. As active metals, Ti, Zr, and Hf have been proven and can be said to be preferable. Active metal is not just a simple metal element.
Alloys or compounds of Ti, Zr, and Hf can also be used.
For example, titanium hydride. Among them, a brazing material containing Ti and / or Zr is particularly suitable for the bonding strength and the like.
Further, it is necessary that the active metal content in the brazing material in contact with the ceramic substrate is higher than the active metal content of the brazing material in the other layers. The reason is that the active metal component in the layer in contact with the ceramic substrate has a small moving distance, so that the reaction with the ceramic substrate is performed efficiently, the bonding state becomes good, and the bonding strength is improved and the residual stress is reduced. Conceivable. The reliability of the resulting circuit board is improved. In addition,
The melting point of the Ag-Cu-based brazing filler metal containing an active metal in these brazing filler metals varies depending on the composition, but is about 800 to 900 ° C.

【0017】また、金属回路板にアルミニウム或いはそ
の合金を用いる場合のろう材は、Al−Si系、Al−
Mg系、Al−Cu系などの一般にアルミニウムに適用
されるろう材系を用いることができるが、このうち、特
にAl−Si系はろう材成分の金属回路板への拡散によ
る特性劣化を起こすことが少なく好ましい。なお、これ
らのろう材の融点としては600℃程度である。
When aluminum or an alloy thereof is used for the metal circuit board, the brazing material may be Al-Si based, Al-
A brazing material generally applied to aluminum, such as an Mg-based or Al-Cu-based material, can be used. Among them, an Al-Si-based material, in particular, causes deterioration in characteristics due to diffusion of a brazing material component into a metal circuit board. Is preferred. The melting point of these brazing materials is about 600 ° C.

【0018】接合処理条件は、ろう材の組成や金属回路
板の材質により適宜選択され、特に特殊な条件に限定さ
れるものではない。例えば、活性金属を含むろう材を用
いて接合処理する場合、10−4torr以下の真空
中、ろう材の融点以上の温度で行われことができるが、
一般的な条件として、ろう材の融点の50℃程度上の温
度を選択するのが無難である。なお、本発明の方法を適
用することにより接合が容易になり、短時間で良好な接
合層を形成することが可能である。
The bonding conditions are appropriately selected depending on the composition of the brazing material and the material of the metal circuit board, and are not particularly limited to special conditions. For example, when the joining process is performed using a brazing material containing an active metal, the joining process can be performed in a vacuum of 10 −4 torr or less at a temperature equal to or higher than the melting point of the brazing material.
As a general condition, it is safe to select a temperature about 50 ° C. above the melting point of the brazing material. Note that the application of the method of the present invention facilitates bonding, and enables formation of a favorable bonding layer in a short time.

【0019】その後接合体から回路基板を製造する方法
として、フルエッチ法では金属板部分を、目的形状とす
るため、化学エッチング等の方法で不要な金属板及びろ
う材を除去して、パターニングすなわち金属回路を形成
する。またDBC法等の方法を用いて回路を形成する事
も可能である。
Thereafter, as a method of manufacturing a circuit board from the joined body, in a full etching method, an unnecessary metal plate and a brazing material are removed by a method such as chemical etching in order to form a metal plate portion into a target shape. Form a metal circuit. Further, a circuit can be formed by a method such as the DBC method.

【0020】さらに、パターニングして回路形成後、ハ
ンダ濡れ性や耐候性の向上のために金属部分にNi系な
どのメッキ処理を施すのが一般的である。メッキ方法は
電解メッキ法や無電解メッキ法など特に限定されるもの
ではない。ただし、電解メッキ法ではパターンが複雑で
電極設定位置が取り難いことから、無電解メッキ法が一
般的である。
Further, after the circuit is formed by patterning, the metal portion is generally plated with Ni or the like in order to improve solder wettability and weather resistance. The plating method is not particularly limited, such as an electrolytic plating method and an electroless plating method. However, the electroless plating method is generally used because the pattern is complicated and it is difficult to set an electrode setting position.

【0021】[0021]

【実施例】以下、実施例と比較例をあげてさらに具体的
に説明する。セラミックス基板として窒化アルミニウム
焼結基板を用いた。この窒化アルミニウム焼結基板は窒
化アルミニウム粉末に酸化イットリウム粉末3重量%配
合しドクターブレード法を用いて成形した成型体を18
70℃で窒素雰囲気中で焼成して得られた熱伝導率15
0W/(m・K)、相対密度99.9%、厚み0.63
mmのものを用いた。
The present invention will be described more specifically with reference to examples and comparative examples. An aluminum nitride sintered substrate was used as a ceramic substrate. The aluminum nitride sintered substrate was prepared by mixing 18% of yttrium oxide powder with aluminum nitride powder and molding the mixture using a doctor blade method.
Thermal conductivity 15 obtained by firing in a nitrogen atmosphere at 70 ° C.
0 W / (m · K), relative density 99.9%, thickness 0.63
mm.

【0022】多層のろう材層を形成するためのペースト
の作製は通常行われるように市販のろう材用原料粉末、
銀粉末(平均粒径2μm、純度99%以上)、銅粉末
(平均粒径2.5μm、純度99%以上)、水素化チタ
ン粉末(粒径10μm以下、純度98%以上)、Zr粉
末(粒径40μm以下、純度98%以上)を用い、金属
元素の重量比が表1に示す量となるように配合した。こ
れらの配合した原料粉末100重量部に対してテルピネ
ヲ−ル15重量部と有機結合材としてポリイソブチルメ
タアクリレ−トのトルエン溶液を固形分で1.5重量部
加えて3本ロールを用いて250メッシュのテトロン製
メッシュを通過するまで十分混練してペーストを調製し
た。なお、この混練工程で配合した原料粉末は粉砕され
十分混合される。
The preparation of a paste for forming a multi-layered brazing material layer is carried out as usual, with a commercially available raw material powder for brazing material,
Silver powder (average particle diameter 2 μm, purity 99% or more), copper powder (average particle diameter 2.5 μm, purity 99% or more), titanium hydride powder (particle diameter 10 μm or less, purity 98% or more), Zr powder (particles) (Diameter: 40 μm or less, purity: 98% or more), and were blended such that the weight ratio of the metal elements was as shown in Table 1. 15 parts by weight of terpineol and 1.5 parts by weight of a solid solution of a polyisobutyl methacrylate toluene solution as an organic binder were added to 100 parts by weight of the compounded raw material powder, and three rolls were used. The paste was sufficiently kneaded until it passed through a 250 mesh Tetron mesh to prepare a paste. The raw material powder mixed in the kneading step is pulverized and sufficiently mixed.

【0023】まず、表1に示す組成の第1のペーストを
窒化アルミニウム焼結基板の両面にスクリ−ン印刷によ
って全面塗布し、150℃で10分間乾燥した。その際
の塗布量は乾燥後で表1に示す量となるように予め印刷
条件などを調整して行なった。この基板にさらに同様の
方法で組成の異なる第2、第3のペースト(実施例、比
較例によって異なる)を順次塗布と乾燥を繰り返して組
成の異なるろう材ペーストを多層に形成した基板を得
た。
First, a first paste having the composition shown in Table 1 was applied on both sides of an aluminum nitride sintered substrate by screen printing and dried at 150 ° C. for 10 minutes. The coating amount at that time was adjusted by adjusting printing conditions and the like in advance so as to be the amount shown in Table 1 after drying. A second and third pastes having different compositions (different according to Examples and Comparative Examples) were successively applied and dried on this substrate in the same manner to obtain a substrate in which brazing material pastes having different compositions were formed in multiple layers. .

【0024】次に、ろう材ペ−ストを塗布した窒化アル
ミニウム基板の片面に、金属回路形成用としての厚さ
0.3mmの銅板を、又その反対面に放熱用として厚さ
0.15mmの銅板を接触配置した。BN製容器中に積
載して、真空加熱炉に投入し、1×10−4torrの
真空下、表1に示す温度で10分間加熱した後、2℃/
min.の降温速度で冷却して接合体を製造した。
Next, a copper plate having a thickness of 0.3 mm for forming a metal circuit is provided on one surface of the aluminum nitride substrate coated with the brazing material paste, and a copper plate having a thickness of 0.15 mm is provided on the other surface for heat radiation. A copper plate was placed in contact. After being loaded in a BN container, put into a vacuum heating furnace, and heated at a temperature shown in Table 1 for 10 minutes under a vacuum of 1 × 10 −4 torr, and then heated at 2 ° C. /
min. The mixture was cooled at a temperature lowering rate to produce a joined body.

【0025】次いで、この接合体の銅板上に紫外線硬化
タイプのエッチングレジストをスクリ−ン印刷法により
パターン印刷し、塩化第2銅溶液を用いて不要銅部分を
溶解除去し、さらにパターン外に残った不要ろう材や反
応生成物を、60℃、10%弗化アンモニウム溶液で溶
解除去した。この後、5%苛性ソ−ダ溶液でエッチング
レジストを剥離し、目的形状の回路基板を得た。これ
に、無電解Ni−Pメッキ処理を施し、銅回路部分にメ
ッキ膜を形成させて、表1の実施例、比較例に示す接合
体試料を得た。
Next, an ultraviolet-curable etching resist is pattern-printed on the copper plate of the joined body by a screen printing method, unnecessary copper portions are dissolved and removed using a cupric chloride solution, and the remaining copper is left outside the pattern. The unnecessary brazing filler metal and reaction products were dissolved and removed with a 10% ammonium fluoride solution at 60 ° C. Thereafter, the etching resist was stripped with a 5% caustic soda solution to obtain a circuit board having a desired shape. This was subjected to an electroless Ni-P plating treatment to form a plating film on the copper circuit portion, thereby obtaining joined body samples shown in Examples and Comparative Examples in Table 1.

【0026】これらの回路基板のヒートサイクル試験を
実施した。ヒートサイクル試験はJIS−C−0025
温度変化試験法に準拠し、−40℃で30分間保持、+
125℃で30分間加熱する加熱冷却操作を1サイクル
とし、150サイクル実施した。ヒートサイクル試験
後、銅回路板及びろう材を回路形成時と同様の方法で金
属回路部及びろう材を溶解除去し、銅回路板の下側の窒
化アルミニウム焼結基板に発生したクラックの長さを測
定した。
A heat cycle test was performed on these circuit boards. Heat cycle test is JIS-C-0025
According to the temperature change test method, hold at -40 ° C for 30 minutes, +
The heating / cooling operation of heating at 125 ° C. for 30 minutes was defined as one cycle, and 150 cycles were performed. After the heat cycle test, the copper circuit board and the brazing material were dissolved and removed by the same method as that used to form the circuit, and the length of cracks generated in the aluminum nitride sintered substrate below the copper circuit board Was measured.

【0027】この接合時の残留応力によるクラックは、
回路の縁に沿って、回路の縁から回路銅板側に3mm以
内の所に回路の縁に平行に発生する。従ってクラックの
長さは、この平行に走ったクラックの長さを倍率50倍
の実体顕微鏡下で観察し、その合計を求めた。一方、回
路周長として、回路板の縁の長さを合計(全周)した値
を求めた。実施例、比較例で回路パターンは全て同一と
したので、どの例に於いても回路周長は一定である。ク
ラック発生率をクラック長さ/回路周長で求めその結果
を表1に示した。
The crack due to the residual stress at the time of joining is as follows:
Along the edge of the circuit, within 3 mm from the edge of the circuit to the side of the circuit copper plate, it occurs parallel to the edge of the circuit. Therefore, the length of the cracks was obtained by observing the lengths of the cracks running in parallel under a stereoscopic microscope with a magnification of 50 times, and calculating the total. On the other hand, a value obtained by summing the lengths of the edges of the circuit board (entire circumference) was determined as the circuit circumference. Since the circuit patterns in the example and the comparative example were all the same, the circuit circumference was constant in any of the examples. The crack occurrence rate was determined by (crack length / circuit circumference) and the results are shown in Table 1.

【0028】表1に於いて分かりやすくするため、実施
例1〜6と、比較例1〜6は同じ番号で対応した実験と
なっている。すなわち比較例1〜6では実施例1〜6の
それぞれの多層のペースト全体の金属組成比を知るた
め、塗布乾燥した段階で多層のペーストを有機溶剤で溶
解しサンプリングして組成分析を行ない、対応する比較
例(多層でなく、一回のペースト印刷塗布)用のペース
ト作製の際に、この金属組成比の分析値を用いて原料を
配合した。また、比較例7は同一の組成のペーストを多
層に印刷した場合の例である。
In order to make it easier to understand in Table 1, Examples 1 to 6 and Comparative Examples 1 to 6 are experiments corresponding to the same numbers. That is, in Comparative Examples 1 to 6, in order to know the metal composition ratio of the entire multilayer paste of each of Examples 1 to 6, at the stage of coating and drying, the multilayer paste is dissolved in an organic solvent, sampled, and the composition is analyzed. In preparing a paste for a comparative example (not a multilayer, one-time paste printing application), raw materials were blended using the analysis value of the metal composition ratio. Comparative Example 7 is an example in which pastes having the same composition are printed in multiple layers.

【0029】表1より本発明による実施例は比較例に比
べ、クラックの発生率が低く耐ヒートサイクル性に優れ
ていることが分かる。
From Table 1, it can be seen that the examples according to the present invention have a lower crack generation rate and better heat cycle resistance than the comparative examples.

【0030】[0030]

【表1】 [Table 1]

【0031】[0031]

【発明の効果】本発明で示すように、組成の異なるろう
材を多層に形成することにより、ろう材とセラミックス
基板の接合が容易になり、かつ、得られる回路基板の耐
ヒートサイクル性などの特性が向上する。また、傾斜機
能層の形成方法としても期待できる。
As shown in the present invention, by forming brazing materials having different compositions in multiple layers, the joining of the brazing material and the ceramic substrate becomes easy, and the heat cycle resistance and the like of the obtained circuit board are improved. The characteristics are improved. Further, it can also be expected as a method for forming a gradient functional layer.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 組成の異なるペーストを多層に塗布した断面
概念図
FIG. 1 is a conceptual cross-sectional view in which pastes having different compositions are applied in multiple layers.

【符号の説明】[Explanation of symbols]

1:セラミックス基板 2:ペースト組成1 3:ペースト組成2 4:ペースト組成3 5:金属回路板 1: Ceramic substrate 2: Paste composition 1: 3: Paste composition 2: 4: Paste composition 3: 5: Metal circuit board

フロントページの続き (72)発明者 寺崎 隆一 東京都町田市旭町3丁目5番1号 電気化 学工業株式会社総合研究所内Continued on the front page (72) Inventor Ryuichi Terasaki 3-5-1 Asahicho, Machida-shi, Tokyo Denki Kagaku Kogyo Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】ろう材を用いてセラミック基板に金属回路
板を接合してなる回路基板の製造方法であって、組成の
異なるろう材をセラミックス基板上に多層に形成した後
に熱処理して接合することを特徴とする回路基板の製造
方法。
1. A method for manufacturing a circuit board, comprising joining a metal circuit board to a ceramic substrate using a brazing material, wherein a brazing material having a different composition is formed in multiple layers on the ceramic substrate and then joined by heat treatment. A method for manufacturing a circuit board, comprising:
【請求項2】ろう材中に活性金属成分としてTi及び/
又はZrを含むことを特徴とする請求項1に記載の回路
基板の製造方法。
2. An active metal component in a brazing filler metal, Ti and / or
The method according to claim 1, further comprising Zr.
【請求項3】セラミック基板に接する層のろう材中の活
性金属の含有率が、他の層のろう材の活性金属含有率よ
り高いことを特徴とする請求項1または2に記載の回路
基板の製造方法。
3. The circuit board according to claim 1, wherein the active metal content of the brazing material in the layer in contact with the ceramic substrate is higher than the active metal content of the brazing material in the other layers. Manufacturing method.
JP33671796A 1996-12-17 1996-12-17 Circuit board manufacturing method Expired - Fee Related JP3526710B2 (en)

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Application Number Priority Date Filing Date Title
JP33671796A JP3526710B2 (en) 1996-12-17 1996-12-17 Circuit board manufacturing method

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Publication Number Publication Date
JPH10178270A true JPH10178270A (en) 1998-06-30
JP3526710B2 JP3526710B2 (en) 2004-05-17

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Application Number Title Priority Date Filing Date
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Country Link
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144433A (en) * 1999-11-18 2001-05-25 Denki Kagaku Kogyo Kk Ceramics circuit board
JP2011211217A (en) * 2011-05-25 2011-10-20 Dowa Holdings Co Ltd Manufacturing method for metal-ceramic junction circuit board
JP2014053619A (en) * 2013-09-30 2014-03-20 Dowa Holdings Co Ltd Method for manufacturing metal-ceramic bonded circuit board
JP2014205609A (en) * 2013-03-20 2014-10-30 ジョンソン エレクトリック ソシエテ アノニム Method for manufacturing commutator using brazing and soldering process
JP2014224030A (en) * 2013-03-20 2014-12-04 シェンジェン ジョイント ウェルディング マテリアル カンパニー リミテッド Method for applying metallic sheet to graphite structure using brazing and soldering step
KR20170048997A (en) * 2015-10-27 2017-05-10 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
WO2023286862A1 (en) * 2021-07-16 2023-01-19 三菱マテリアル株式会社 Copper/ceramic bonded body and insulated circuit board

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144433A (en) * 1999-11-18 2001-05-25 Denki Kagaku Kogyo Kk Ceramics circuit board
JP2011211217A (en) * 2011-05-25 2011-10-20 Dowa Holdings Co Ltd Manufacturing method for metal-ceramic junction circuit board
JP2014205609A (en) * 2013-03-20 2014-10-30 ジョンソン エレクトリック ソシエテ アノニム Method for manufacturing commutator using brazing and soldering process
JP2014224030A (en) * 2013-03-20 2014-12-04 シェンジェン ジョイント ウェルディング マテリアル カンパニー リミテッド Method for applying metallic sheet to graphite structure using brazing and soldering step
JP2014053619A (en) * 2013-09-30 2014-03-20 Dowa Holdings Co Ltd Method for manufacturing metal-ceramic bonded circuit board
KR20170048997A (en) * 2015-10-27 2017-05-10 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
WO2023286862A1 (en) * 2021-07-16 2023-01-19 三菱マテリアル株式会社 Copper/ceramic bonded body and insulated circuit board

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