JPH10172966A - 集積回路絶縁体及びその製法 - Google Patents

集積回路絶縁体及びその製法

Info

Publication number
JPH10172966A
JPH10172966A JP9307308A JP30730897A JPH10172966A JP H10172966 A JPH10172966 A JP H10172966A JP 9307308 A JP9307308 A JP 9307308A JP 30730897 A JP30730897 A JP 30730897A JP H10172966 A JPH10172966 A JP H10172966A
Authority
JP
Japan
Prior art keywords
polymer
metal
fluorine
parylene
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9307308A
Other languages
English (en)
Japanese (ja)
Inventor
J Taylor Kelly
ジェイ．テイラー ケリー
Eisa Mona
エイサ モナ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH10172966A publication Critical patent/JPH10172966A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP9307308A 1996-11-08 1997-11-10 集積回路絶縁体及びその製法 Pending JPH10172966A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US029749 1993-03-11
US2974996P 1996-11-08 1996-11-08

Publications (1)

Publication Number Publication Date
JPH10172966A true JPH10172966A (ja) 1998-06-26

Family

ID=21850685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9307308A Pending JPH10172966A (ja) 1996-11-08 1997-11-10 集積回路絶縁体及びその製法

Country Status (3)

Country Link
JP (1) JPH10172966A (ko)
KR (1) KR19980042229A (ko)
TW (1) TW382762B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1018527A2 (en) * 1998-12-09 2000-07-12 Applied Materials, Inc. Nano-porous copolymer films having low dielectric constants
WO2001084626A1 (en) * 2000-04-28 2001-11-08 Tokyo Electron Limited Semiconductor device having a low dielectric film and fabrication process thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1018527A2 (en) * 1998-12-09 2000-07-12 Applied Materials, Inc. Nano-porous copolymer films having low dielectric constants
EP1018527A3 (en) * 1998-12-09 2004-10-27 Applied Materials, Inc. Nano-porous copolymer films having low dielectric constants
WO2001084626A1 (en) * 2000-04-28 2001-11-08 Tokyo Electron Limited Semiconductor device having a low dielectric film and fabrication process thereof

Also Published As

Publication number Publication date
TW382762B (en) 2000-02-21
KR19980042229A (ko) 1998-08-17

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