JPH10150178A - Solid-state image sensing device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the generation of a short-circuit between wires and a solid-state image sensing element in the case where electrode pads on the element are connected with inner leads on a package by the wires and also to prevent the generation of trouble that unnecessary reflected light of external incident light due to the wires enters a photoelectric conversion part on the element to generate a dummy signal. SOLUTION: When electrode pads 13, which are provided on the periphery of a photoelectric conversion part on the light-receiving surface of a solid-state image sensing element 12 fixed on the inner bottom of a package 11, are connected with inner leads 14a, which are provided on the inner bottom of the package in a state that the leads 14 are adjacent to the element 12, by wires 15, at least two places of bending parts 22 and 23 are provided in the middle of each of the wires 15 and the wires 15 are folded back within the plane, which includes wire connection points to connect the pads 13 and the leads 14 with each other via the wires 15 and is vertical to the inner bottom of the package 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device in which an electrode pad on a light-receiving surface of a solid-state imaging device and a wiring pattern provided on an inner lead of a package or a main surface of a circuit board are interconnected by wires. And its manufacturing method.

[0002]

2. Description of the Related Art In recent years, in the semiconductor industry, with the progress of manufacturing technology, the size of solid-state imaging devices and packages has been reduced, and various measures have been required in a wire connection process. Hereinafter, a conventional solid-state imaging device and a manufacturing method thereof will be described with reference to the drawings.

FIG. 4 is a schematic cross-sectional view of a conventional solid-state imaging device after completion of a wire connection operation, and FIG. 5 is an enlarged schematic cross-sectional view of the wire connection portion. 4 and 5, the solid-state imaging device 32 is provided with, for example, an aluminum wire connection electrode pad 33 around the photoelectric conversion portion 32b on the light receiving surface. The hollow package 31 having an open top surface is made of, for example, ceramic or resin,
The solid-state imaging device 32 is bonded and fixed (die-bonded) to the inner bottom surface, and an inner lead 34 for wire connection is arranged on the inner bottom surface in a state close to the solid-state imaging device 32. The connection wire 35 connects the electrode pad 33 and the inner lead 34 to each other.

In this case, the package 31 is provided with a solid-state image sensor 32 on the inner bottom surface in order to reduce the thickness of the solid-state image sensor.
The mounting surface of the inner lead 34 and the mounting surface of the inner lead 34 are substantially at the same height, and the step between the surface of the electrode pad 33 on the light receiving surface of the solid-state imaging device 32 and the surface of the inner lead 34 is large. This step is large in the case of a solid-state imaging device having a hollow package for the purpose of thinning as described above.

In the case where thinning is not required, the mounting surface of the inner leads should be higher than the mounting surface of the semiconductor element, that is, the bottom surface of the package should be divided into a central low step portion and a peripheral high step portion. Since a step structure is adopted, the semiconductor element can be installed at the lower central step and the inner lead can be installed at the higher peripheral step, the step between the surface of the semiconductor element and the surface of the inner lead can be reduced.

Further, since the wire connection point of the electrode pad 33 and the wire connection point of the inner lead 34 are both upward, the wire 35 is connected to the wire connection point of the electrode pad 33 to be connected to the inner lead 34. In a plane substantially perpendicular to the inner bottom surface of the package 31 and including one of the wire connection points described above, one sharp bent portion 42 is provided in the middle and folded. At the wire connection point of the electrode pad 33, a pad-side wire crushing portion 41 is generated for crimping the wire 35 to the electrode pad 33.

After the washing and drying steps using an organic solvent for dust removal, the opening of the package 31 is sealed with a transparent glass plate. Hereinafter, a description will be given of a procedure for connecting wires and a shape of the wires in the solid-state imaging device configured as described above. In FIG. 5, first, in order to connect the wire 35 to the electrode pad 33 provided around the photoelectric conversion portion 32b on the light receiving surface of the solid-state imaging device 32, the wire 35 is crimped to the electrode pad 33, and the pat-side wire collapses. A part 41 is formed. Subsequently, the wire 35 connected to the electrode pad 33 is pulled out substantially vertically upward with respect to the electrode pad 33, and after one sharp bent portion 42 is formed, the wire 35 is inclined obliquely downward to the inner lead 34 side. Drawn to. Then, the wire 35 guided to the inner lead 34 is crimped to the inner lead 34.

The bent portion 42 is formed, for example, as follows. That is, the wire is led out from the tip of the capillary of the wire bonder, and the shape of the wire is largely determined by the movement of the tip of the capillary. In the case shown in FIG. 5, the bent portion 42 can be formed by moving the tip of the capillary along the two sides of the triangle. By performing the above procedure, as shown in FIGS.
And the inner lead 34 is connected by the wire 35.

[0009]

However, in the wire shape in the above-described conventional solid-state imaging device, as described above, when the height of the surface of the inner lead 34 is lower than the height of the surface of the electrode pad 33, as described above. And when the solid-state imaging device 32 and the inner lead 34 are close to each other,
There is a problem that a gap between the edge portion 32a of the solid-state imaging device 32 and the wire 35 becomes narrow, and a short circuit occurs between the solid-state imaging device 32 and the wire 35.

The solid-state image sensor 32 and the wire 3 as described above
5 to avoid the problem of short circuit
May be lengthened to separate the bent portion 42 from the solid-state imaging device 32. However, if the problem of short circuit is avoided by such means, a part of the externally incident light hits the wire 35, which reflects and directly enters the photoelectric conversion unit 32b of the solid-state imaging device 32, or The light reflected by the wire 35 hits a transparent sealing glass plate (not shown) provided in the opening of the package 31, and the light reflected therefrom is likely to be incident on the photoelectric conversion unit 32 b of the solid-state imaging device 32. This causes a problem that a pseudo signal is easily generated.

In the above-mentioned conventional example, the problem in the case where the solid-state image sensor 32 is fixed to the package 31 and the electrode pads 33 of the solid-state image sensor 32 and the inner leads 34 of the package 31 are connected by wires 35 has been described. But,
The same problem as described above occurs when the solid-state imaging device is mounted on a circuit board together with other components, and the electrode pads of the solid-state imaging device and the wiring patterns of the circuit board are connected by wires.

As another problem, there is the following problem. That is, in the final stage of the process of manufacturing the solid-state imaging device, the solid-state imaging device is washed with an organic solvent before the transparent glass plate is sealed, in order to remove dust in the hollow portion. However, as shown in FIG. 5, the wire 35 and the solid-state image sensor 32 are connected to the edge 32a.
When the organic solvent is dried after cleaning, the organic solvent remains to the end due to surface tension at the edge 32a. The remaining organic solvent contains dust, and at the end of the drying process, when the remaining organic solvent moves away from the wire to the solid-state imaging device side,
It spreads to the pixel portion on the surface of the solid-state imaging device, and as a result, dust adheres to the pixel portion, and appears as a spot-like pattern in the image of the solid-state imaging device.

Accordingly, an object of the present invention is to provide a structure in which an electrode pad of a solid-state image sensor has a higher step between an electrode pad of the solid-state image sensor and an inner lead of a package.
In addition, when the electrode pad and the inner lead are close to each other, it is possible to prevent a short circuit between the wire and the solid-state imaging device when connecting the electrode pad and the inner lead with a wire, and it is unnecessary to use a wire for external incident light. An object of the present invention is to provide a solid-state imaging device and a method for manufacturing the solid-state imaging device, which can prevent generation of a false signal due to a reflected light entering a photoelectric conversion unit of a solid-state imaging device.

Another object of the present invention is to provide a solid-state image sensing device having a higher step between the electrode pad of the solid-state image sensing device and the wiring pattern of the circuit board, and the electrode pad and the wiring pattern are not connected to each other. When the electrodes are close to each other, a short circuit between the wire and the solid-state imaging device when the electrode pad and the wiring pattern are connected by a wire can be prevented, and unnecessary reflected light of the wire of external incident light by the wire can be prevented. An object of the present invention is to provide a solid-state imaging device capable of preventing generation of a false signal by entering a photoelectric conversion unit and a method of manufacturing the same.

Still another object of the present invention is to provide a solid-state imaging device capable of preventing dust from adhering to a pixel portion and appearing as a spot-like pattern in an image of a solid-state imaging device, and a method of manufacturing the same. It is.

[0016]

According to a first aspect of the present invention, there is provided a solid-state imaging device having an electrode pad provided around a photoelectric conversion portion on a light receiving surface, and a solid-state imaging device fixed to an inner bottom surface. A package in which inner leads are provided on the inner bottom surface in a state close to the solid-state imaging device, and wires for interconnecting the electrode pads and the inner leads, and electrode pads to be interconnected via the wires In a plane including the wire connection point of the inner lead and the wire connection point of the inner lead and being substantially perpendicular to the inner bottom surface of the package, the wire is folded back with at least two bent portions provided in the middle.

According to this structure, the electrode pad of the solid-state imaging device has a higher step between the electrode pad of the solid-state imaging device and the inner lead of the package, and the electrode pad and the inner lead are close to each other. In this case, at least two bent portions are formed in the middle of the wire in a plane including the wire connection point of the electrode pad to be connected to each other and the wire connection point of the inner lead and substantially perpendicular to the inner bottom surface of the package. Since the wire is provided and folded, the solid-state imaging device and the wire can be sufficiently separated from each other, and a short circuit between the wire and the solid-state imaging device when the electrode pad and the inner lead are connected by the wire can be prevented.

Moreover, in order to prevent a short circuit between the wire and the solid-state image pickup device, it is not necessary to increase the dimension from the electrode pad to the nearest bent portion of the wire. It is possible to prevent the reflected light from entering the photoelectric conversion unit of the solid-state imaging device and generating a pseudo signal. Furthermore, since the solid-state imaging device and the wire can be sufficiently separated, when cleaning with an organic solvent for dust removal and drying thereof are performed, an organic solvent containing dust remains between the solid-state imaging device and the wire. As a result, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, thereby preventing the dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device. can do.

According to a second aspect of the present invention, there is provided a solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light receiving surface, and a solid-state imaging device having a solid-state imaging device fixed on a main surface thereof. A circuit board having a wiring pattern disposed on the main surface in a state close to the element; and a wire for interconnecting the electrode pad and the wiring pattern, and wire connection of the electrode pad to be interconnected via the wire In a plane including the point and the wire connection point of the wiring pattern and substantially perpendicular to the main surface of the circuit board, the wire is folded back with at least two bent portions provided in the middle.

According to this structure, the electrode pad of the solid-state imaging device has a higher step between the electrode pad of the solid-state imaging device and the wiring pattern of the circuit board, and the electrode pad and the wiring pattern are close to each other. At least two bends in the middle of a plane including a wire connection point of an electrode pad to be connected to each other and a wire connection point of a wiring pattern and substantially perpendicular to the main surface of the circuit board. Since the portion is provided and folded, the solid-state imaging device and the wire can be sufficiently separated from each other, and a short circuit between the wire and the solid-state imaging device when the electrode pad and the wiring pattern are connected by the wire can be prevented. it can.

In addition, since it is not necessary to increase the dimension from the electrode pad to the nearest bent portion of the wire in order to prevent a short circuit between the wire and the solid-state image pickup device, unnecessary wire by external incident light due to the wire is unnecessary. It is possible to prevent the reflected light from entering the photoelectric conversion unit of the solid-state imaging device and generating a pseudo signal. Furthermore, since the solid-state imaging device and the wire can be sufficiently separated, when cleaning with an organic solvent for dust removal and drying thereof are performed, an organic solvent containing dust remains between the solid-state imaging device and the wire. As a result, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, thereby preventing the dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device. can do.

According to a third aspect of the present invention, there is provided a method of manufacturing a solid-state imaging device, comprising: a solid-state imaging device having an electrode pad provided around a photoelectric conversion portion on a light receiving surface; A package in which inner leads are provided on the inner bottom surface in a state close to the imaging element; and wires for connecting the electrode pads and the inner leads to each other, and wire connection of the electrode pads to be connected to each other via the wires A method for manufacturing a solid-state imaging device in which a wire is provided with two bent portions in the middle and folded back in a plane including a point and a wire connection point of an inner lead and substantially perpendicular to an inner bottom surface of the package, One end of the wire is crimped to one of the wire connection point of the electrode pad and the wire connection point of the inner lead, and then the wire is pulled out upward. The wire is drawn laterally from one upper position of the wire connection point toward the wire connection point of the electrode pad and the other upper position of the wire connection point of the inner lead, and then the wire is drawn downward and the other end of the wire is drawn. To the other of the wire connection point of the electrode pad and the wire connection point of the inner lead.

According to this method, there is a higher step between the electrode pad of the solid-state imaging device and the wiring pattern of the circuit board, and the electrode pad and the wiring pattern are close to each other. When one end of the wire is crimped to one of the wire connection point of the electrode pad and the wire connection point of the inner lead, the wire is pulled out upward, and one of the wire connection point of the electrode pad and the wire connection point of the inner lead is drawn. From the upper position, the wire is pulled out laterally toward the other upper position between the wire connection point of the electrode pad and the wire connection point of the inner lead, and then the wire is pulled down, and the other end of the wire is connected to the wire of the electrode pad. Since the wire is crimped to the other of the wire connection point of the inner lead and the wire connection point of the inner lead, And at least two bends in the middle of the package in a plane including the ear connection point and substantially perpendicular to the inner bottom surface of the package, so that the solid-state imaging device and the wire can be sufficiently separated from each other. This can prevent a short circuit between the wire and the solid-state imaging device when the electrode pad and the wiring pattern are connected by a wire.

Further, in order to prevent a short circuit between the wire and the solid-state imaging device, it is not necessary to increase the dimension from the electrode pad to the nearest bent portion of the wire. It is possible to prevent the reflected light from entering the photoelectric conversion unit of the solid-state imaging device and generating a pseudo signal. Furthermore, since the solid-state imaging device and the wire can be sufficiently separated, when cleaning with an organic solvent for dust removal and drying thereof are performed, an organic solvent containing dust remains between the solid-state imaging device and the wire. As a result, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, thereby preventing the dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device. can do.

According to a fourth aspect of the present invention, there is provided a method for manufacturing a solid-state imaging device, comprising: a solid-state imaging device having an electrode pad provided around a photoelectric conversion portion on a light receiving surface; A circuit board having a wiring pattern disposed on the main surface in a state close to the imaging element; and a wire for interconnecting the electrode pad and the wiring pattern, wherein the wire of the electrode pad to be interconnected via the wire A method for manufacturing a solid-state imaging device in which a wire is provided with two bent portions in the middle and turned back in a plane including a connection point and a wire connection point of a wiring pattern and substantially perpendicular to the main surface of the circuit board. Yes, one end of the wire is crimped to one of the wire connection point of the electrode pad and one of the wire connection points of the wiring pattern, and then the wire is pulled out upward. From the position, the wire is pulled out laterally toward the wire connection point of the electrode pad and the other upper position of the wire connection point of the wiring pattern, and then the wire is drawn down, and the other end of the wire is connected to the wire connection point of the electrode pad. And crimped to the other of the wire connection points of the wiring pattern.

According to this method, the electrode pad of the solid-state image sensor has a higher step between the electrode pad of the solid-state image sensor and the wiring pattern of the circuit board, and the electrode pad and the wiring pattern are close to each other. When one end of the wire is crimped to one of the wire connection point of the electrode pad and the wire connection point of the wiring pattern, the wire is pulled out upward, and one of the wire connection point of the electrode pad and the wire connection point of the wiring pattern is drawn. From the upper position, the wire is pulled out laterally toward the wire connection point of the electrode pad and the other upper position of the wire connection point of the wiring pattern, and then the wire is drawn down, and the other end of the wire is connected to the electrode pad. Since the wire is crimped to the other of the point and the wire connection point of the wiring pattern, the wire connection point of the electrode pad to be interconnected and the wire connection of the wiring pattern And in a plane substantially perpendicular to the main surface of the circuit board, the wire can be folded back by providing at least two bent portions in the middle thereof, so that the solid-state imaging device and the wire are sufficiently separated from each other. Can be
When the electrode pad and the wiring pattern are connected by a wire, a short circuit between the wire and the solid-state imaging device can be prevented.

In addition, since it is not necessary to increase the dimension from the electrode pad to the nearest bent portion of the wire in order to prevent a short circuit between the wire and the solid-state image sensor, unnecessary external light due to the wire is unnecessary. It is possible to prevent the reflected light from entering the photoelectric conversion unit of the solid-state imaging device and generating a pseudo signal. Furthermore, since the solid-state imaging device and the wire can be sufficiently separated, when cleaning with an organic solvent for dust removal and drying thereof are performed, an organic solvent containing dust remains between the solid-state imaging device and the wire. As a result, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, thereby preventing the dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device. can do.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a solid-state imaging device according to an embodiment of the present invention and a method for manufacturing the same will be described with reference to the drawings. [First Embodiment] FIG. 1 is a schematic cross-sectional view of a solid-state imaging device according to a first embodiment of the present invention after completion of a wire connection operation, and FIG. 2 is an enlarged schematic cross-sectional view of the wire connection portion. The figure is shown. 1 and 2, the solid-state imaging device 12 is provided with, for example, an aluminum wire connection electrode pad 13 around the photoelectric conversion unit 12b on the light receiving surface.

Since it is necessary to expose the light receiving surface having the photoelectric conversion portion 12b to the outside, the package 11 to which the solid-state image pickup device 12 is mounted has a hollow structure with an open top. In the package 11, the solid-state imaging device 12 is bonded and fixed (die-bonded) to the inner bottom surface, and the inner lead 14 for wire connection is disposed on the inner bottom surface in a state close to the solid-state imaging device 12. The package 11 is made of, for example, a ceramic molded product or a resin molded product, and is formed by disposing the inner leads 14 in advance.

In this case, the package 11 is provided with a solid-state image sensor 12 on the inner bottom surface in order to reduce the thickness of the solid-state image sensor.
And the surface on which the inner leads 14 are installed are substantially at the same height, and the step between the surface of the electrode pads 13 on the light receiving surface of the solid-state imaging device 12 and the surface of the inner leads 14 is large. This step is large in the case of a solid-state imaging device having a hollow package for the purpose of thinning as described above.

The connection wires 15 connect the electrode pads 13 and the inner leads 14 to each other. At this time, since the wire connection point of the electrode pad 13 and the wire connection point of the inner lead 14 are both facing upward, the wire 15 is connected to the electrode pad 1 to be connected to each other.
In the plane including the wire connection point 3 and the wire connection point of the inner lead 14 and being substantially perpendicular to the inner bottom surface of the package 11, two bent portions 22 and 23 of approximately 90 degrees are provided in the middle thereof. It is folded back into an inverted J shape. In addition, a wire 15 is connected to the electrode pad 13 at a wire connection point of the electrode pad 13.
In this case, the pad-side wire crushing portion 21 is generated in order to compress the wire.

The opening of the package 11 is sealed with a transparent glass plate after a washing and drying process using an organic solvent to remove dust. Hereinafter, a description will be given of a procedure for connecting wires and a shape of the wires in the solid-state imaging device configured as described above. In FIG. 2, first, in order to connect the wire 15 to the electrode pad 13 provided around the photoelectric conversion unit 12b on the light receiving surface of the solid-state imaging device 12, the wire 15 is crimped to the electrode pad 13, and the pad-side wire collapses. The part 21 is formed. Subsequently, the wire 15 connected to the electrode pad 13 is pulled out in a substantially vertical upward direction with respect to the wire connection point of the electrode pad 13, and has a bent portion of approximately 90 degrees at a position almost directly above the wire connection point of the electrode pad 13. 22 is formed, from which the wire 15 is pulled out in a substantially horizontal direction toward a position above the wire connection point of the inner lead 14, and further, an obtuse angle bend greater than 90 degrees at a position above the wire connection point of the inner lead 14. A part 23 is formed,
From there, the wire 15 is pulled out downward and guided to the inner lead 14 side. Then, the wire 15 guided to the inner lead 14 is crimped to a wire connection point of the inner lead 14.

Since the wire shape of the bent portions 22 and 23 is determined by the method described in the conventional example, in this case, it can be formed by moving the capillary such that the tip of the capillary traces three sides of a trapezoid. By performing the above procedure, as shown in FIGS. 1 and 2, the solid-state imaging device 12 and the inner lead 14 are in a state of being wire-connected by the wires 15, and the solid-state imaging device 1 is independent of the size of the step.
A sufficiently wide gap can be secured between the second edge 12a and the wire 15.

According to this embodiment, the electrode pad 13
When the height of the surface of the inner lead 14 is lower than the height of the surface of the
4 includes a wire connection point of the electrode pad 13 and a wire connection point of the inner lead 14 to be connected to each other via the wire 15 and is substantially perpendicular to the inner bottom surface of the package 11. In the plane, the wire 15 is provided with two bent portions 22 and 23 in the middle and folded back in a substantially inverted J-shape, so that the solid-state imaging device 12 and the wire 15 are sufficiently separated, that is, the gap between the two is reduced. The wire 15 and the edge portion 12 of the solid-state imaging device 12 can be kept wide, when the electrode pad 13 of the solid-state imaging device 12 and the inner lead 14 of the package 11 are connected by the wire 15.
b can be prevented from short-circuiting.

Moreover, in order to prevent a short circuit between the wire 15 and the edge portion 12b of the solid-state image pickup device 12, the dimension from the electrode pad 13 of the solid-state image pickup device 12 to the bent portion 22 of the wire 15 closest thereto is increased. Therefore, it is possible to prevent unnecessary reflected light of the external incident light from the wire 15 from entering the photoelectric conversion unit 12b of the solid-state imaging device 12 and generating a pseudo signal.

Further, since the solid-state image pickup device 12 and the wire 15 can be sufficiently separated from each other, when cleaning with an organic solvent for removing dust and drying thereof are performed, the space between the solid-state image pickup device 12 and the wire 15 is removed. Since the organic solvent containing dust does not remain, it is possible to prevent the organic solvent containing dust from spreading to the pixel portion at the end of the drying process,
As a result, it is possible to prevent dust from adhering to the pixel portion and appearing as a stain-like pattern in the image of the solid-state imaging device.

[Second Embodiment] FIG. 3 is a schematic side view of a solid-state imaging device according to a second embodiment of the present invention after completion of a wire connection operation. In FIG. 3, the solid-state imaging device 52 is provided with, for example, an aluminum wire connection electrode pad 53 around the photoelectric conversion unit 52b on the light receiving surface.

Circuit board 5 on which solid-state image sensor 52 is mounted
1 is a solid-state image sensor 5 that is not sealed in a package.
2 is mounted together with the other IC elements 56 and 57 in a state where it is exposed. In this circuit board 51, a solid-state imaging device 52 is bonded and fixed to the main surface, and
A wiring pattern 54 for wire connection is arranged on the main surface in a state close to the above. In this case, the circuit board 51 has a large step between the surface of the electrode pad 53 on the light receiving surface of the solid-state imaging device 52 and the surface of the wiring pattern 54. Note that I
In the C elements 56 and 57, the lead terminals 56a and 57a are fixed to the circuit board 51 by solder 58 on the wiring pattern 54.

The connection wires 55 connect the electrode pads 53 and the wiring patterns 54 to each other. At this time, since the wire connection points of the electrode pads 53 and the wire connection points of the wiring pattern 54 are both facing upward, the wires 55 are connected to the electrode pads 53 to be connected to each other.
In a plane substantially perpendicular to the main surface of the circuit board 51,
Two bent portions 62 and 63 are provided on the way, and are folded in a substantially inverted J-shape. At the wire connection point of the electrode pad 53, a pad-side wire crushing portion 61 is generated to press the wire 55 to the electrode pad 53.

After mounting the solid-state imaging device 52 and the like,
The circuit board 51 is subjected to a washing / drying step using an organic solvent to remove dust. Hereinafter, a description will be given of a procedure for connecting wires and a shape of the wires in the solid-state imaging device configured as described above. In FIG. 3, first, in order to connect the wire 55 to the electrode pad 53 provided around the photoelectric conversion unit 52 b on the light receiving surface of the solid-state imaging device 52, the wire 55 is crimped to the electrode pad 53, and the pad-side wire collapses. A part 61 is formed. Subsequently, the wire 55 connected to the electrode pad 53 is pulled out in a substantially vertical upward direction with respect to the wire connection point of the electrode pad 53, and a bent portion of approximately 90 degrees is provided at a position almost directly above the wire connection point of the electrode pad 53. 62 is formed, from which the wire 55 is pulled out in a substantially horizontal direction toward a position above the wire connection point of the inner lead 54, and further, an obtuse angle bend greater than 90 degrees at a position above the wire connection point of the inner lead 54. A portion 63 is formed, from which the wire 55 is pulled out downward and guided to the inner lead 54 side. The wire 55 guided to the wiring pattern 54 side is
Crimped to

By performing the above procedure, as shown in FIG. 3, the solid-state imaging device 52 and the wiring pattern 54 are connected by wires 55 by wires 55, and the solid-state imaging device 52 A sufficiently wide gap can be secured between the edge 52a and the wire 55. According to this embodiment, when the height of the surface of the wiring pattern 54 is lower than the height of the surface of the electrode pad 53 and when the solid-state imaging device 52 and the wiring pattern 54 are close to each other, In a plane substantially including the wire connection point of the electrode pad 53 and the wire connection point of the wiring pattern 54 to be connected to each other via the wire 55 and being substantially perpendicular to the main surface of the circuit board 51, the wire 55 is Since the bent portions 62 and 63 are provided and folded in a substantially inverted J-shape, the solid-state imaging device 52 and the wire 55 can be sufficiently separated, that is, the gap between them can be kept wide, and the solid-state imaging device 52 can be maintained. 55 and the solid-state imaging device 5 when connecting the electrode pad 53 of FIG.
A short circuit between the second edge portion 52b and the second edge portion 52b can be prevented.

Further, in order to prevent a short circuit between the wire 55 and the edge portion 52b of the solid-state image sensor 52, the dimension from the electrode pad 53 of the solid-state image sensor 52 to the bent portion 62 of the wire 55 closest to the electrode pad 53 is increased. Therefore, it is possible to prevent unnecessary reflected light of the external incident light from the wire 55 from entering the photoelectric conversion unit 52b of the solid-state imaging device 52 and generating a pseudo signal.

Further, since the solid-state image sensing element 52 and the wire 55 can be sufficiently separated from each other, when cleaning with an organic solvent for removing dust and drying thereof are performed, the space between the solid-state image sensing element 52 and the wire 55 is reduced. Since the organic solvent containing dust does not remain, it is possible to prevent the organic solvent containing dust from spreading to the pixel portion at the end of the drying process,
As a result, it is possible to prevent dust from adhering to the pixel portion and appearing as a spot-like pattern in the image of the solid-state imaging device 52.

In the first and second embodiments, an example in which two bent portions are provided has been described. However, it is obvious that three or more bent portions may be provided. Further, when connecting the wires, the wires are first connected to the electrode pads and then to the inner leads or the circuit pattern, but the reverse is also possible.

[0045]

According to the solid-state imaging device and the method of manufacturing the same of the present invention, since the wire is bent at at least two places, the wire is bent between the electrode pad of the solid-state imaging device and the inner lead of the package or the wiring pattern of the circuit board. When the electrode pad of the solid-state image sensor has a higher step and the electrode pad and the inner lead or the wiring pattern are close to each other, the electrode pad of the solid-state image sensor and the inner lead of the package or the wiring pattern of the circuit board are used. Short circuit between the wire and the solid-state image sensor when the wire is connected to the solid-state image sensor, unnecessary reflected light from the wire of external incident light enters the photoelectric conversion unit of the solid-state image sensor, and a pseudo signal is generated. It can be prevented from occurring.

Further, since the solid-state imaging device and the wire can be sufficiently separated from each other, when cleaning with an organic solvent for removing dust and drying thereof are performed, an organic material containing dust between the solid-state imaging device and the wire is removed. Since the solvent does not remain, the organic solvent containing dust can be prevented from spreading to the pixel portion at the end of the drying process, and as a result, the dust adheres to the pixel portion and appears as a stain-like pattern on the image of the solid-state imaging device. Can be prevented.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a state after completion of a wire connection operation in a solid-state imaging device according to a first embodiment of the present invention.

FIG. 2 is an enlarged schematic cross-sectional view of a wire connection portion of the solid-state imaging device according to the first embodiment of the present invention.

FIG. 3 is a schematic side view showing a state after completion of a wire connection operation in a solid-state imaging device according to a second embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing a state after completion of a wire connection operation in a conventional solid-state imaging device.

FIG. 5 is an enlarged schematic cross-sectional view of a wire connection part in a conventional solid-state imaging device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Package 12 Solid-state image sensor 13 Electrode pad 14 Inner lead 15 Wire 21 Pad side wire collapse part 22 First bent part 23 Second bent part 24 Lead side wire collapse part 31 Package 32 Solid-state image sensor 33 Electrode pad 34 Inner lead Reference Signs List 35 wire 41 pad-side wire crushed part 42 bent part 43 lead-side wire crushed part 51 package 52 solid-state imaging device 53 electrode pad 54 inner lead 55 wire 61 pad-side wire crushed part 62 first bent part 63 second bent part 64 Lead side wire collapse

Claims (4)

[Claims] 1. A solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light receiving surface, and an inner lead fixed to an inner bottom surface of the solid-state imaging device and having an inner lead close to the solid-state imaging device. A package disposed on the bottom surface, a wire for interconnecting the electrode pad and the inner lead, and a wire connection point of the electrode pad to be interconnected via the wire and a wire of the inner lead A solid-state imaging device comprising: a connecting point; and at least two bent portions provided on the wire in a plane substantially perpendicular to an inner bottom surface of the package. 2. A solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light-receiving surface, and a wiring pattern in which the solid-state imaging device is fixed to a main surface and close to the solid-state imaging device. A circuit board disposed on a surface thereof, and a wire for interconnecting the electrode pad and the wiring pattern, wherein a wire connection point of the electrode pad to be interconnected via the wire and the wiring pattern A solid-state imaging device comprising: a wire connecting point; and a wire which is provided with at least two bent portions in the middle thereof and turned in a plane substantially perpendicular to the main surface of the circuit board. 3. A solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light receiving surface, and an inner lead fixed to the inner bottom surface and having an inner lead in a state close to the solid-state imaging device. A package disposed on the bottom surface, a wire for interconnecting the electrode pad and the inner lead, and a wire connection point of the electrode pad to be interconnected via the wire and a wire of the inner lead A solid-state imaging device manufacturing method for manufacturing a solid-state imaging device in which the wire is provided with two bent portions in the middle and folded back in a plane including a connection point and substantially perpendicular to an inner bottom surface of the package. Then, after crimping one end of the wire to one of the wire connection point of the electrode pad and the wire connection point of the inner lead, pull out the wire upward, Pulling out the wire laterally from a position above one of the wire connection point and the wire connection point of the inner lead toward the other upper position of the wire connection point of the electrode pad and the wire connection point of the inner lead, A method of manufacturing the solid-state imaging device, wherein the wire is pulled downward and the other end of the wire is crimped to the other of the wire connection point of the electrode pad and the wire connection point of the inner lead. 4. A solid-state imaging device having an electrode pad provided around a photoelectric conversion unit on a light receiving surface, and a wiring pattern in which the solid-state imaging device is fixed to a main surface and is close to the solid-state imaging device. A circuit board disposed on a surface thereof, and a wire for interconnecting the electrode pad and the wiring pattern, wherein a wire connection point of the electrode pad to be interconnected via the wire and the wiring pattern A method for manufacturing a solid-state imaging device for manufacturing a solid-state imaging device in which a wire is provided with two bent portions in the middle and turned back in a plane including a wire connection point and substantially perpendicular to the main surface of the circuit board And after crimping one end of the wire to one of the wire connection point of the electrode pad and the wire connection point of the wiring pattern, pulling the wire upward, The wire is laterally pulled out from one upper position of the wire connection point of the wiring pattern toward the wire connection point of the electrode pad and the other upper position of the wire connection point of the wiring pattern, and then the wire is pulled downward. And crimping the other end of the wire to the other of the wire connection point of the electrode pad and the wire connection point of the wiring pattern.